JP2019009218A - Processing method of workpiece - Google Patents
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- 238000003672 processing method Methods 0.000 title claims abstract description 15
- 238000012545 processing Methods 0.000 claims abstract description 37
- 239000011148 porous material Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 abstract description 5
- 230000035699 permeability Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 77
- 238000005452 bending Methods 0.000 description 9
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 6
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 5
- 230000004075 alteration Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000002679 ablation Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 238000013518 transcription Methods 0.000 description 1
- 230000035897 transcription Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
Abstract
Description
本発明は、交差する複数の分割予定ラインが表面に設定された被加工物の加工方法に関する。 The present invention relates to a processing method of a workpiece in which a plurality of intersecting scheduled lines are set on the surface.
特定の周波数帯域の電気信号を取り出すＳＡＷフィルタ（Ｓｕｒｆａｃｅ Ａｃｏｕｓｔｉｃ Ｗａｖｅ Ｆｉｌｔｅｒ：表面弾性波フィルタ）は、ＲＦフィルタ（Ｒａｄｉｏ Ｆｒｅｑｕｅｎｃｙ Ｆｉｌｔｅｒ）やＩＦフィルタ（Ｉｎｔｅｒｍｅｄｉａｔｅ Ｆｒｅｑｕｅｎｃｙ Ｆｉｌｔｅｒ）としてほとんどの携帯電話で使用されている他、デジタルテレビやＧＰＳ、無線ＬＡＭ等のフィルタとしても広く使用されている。 SAW filters (Surface Acoustic Wave Filters) that extract electrical signals in specific frequency bands are used in most mobile phones as RF filters (Radio Frequency Filters) and IF filters (Intermediate Frequency Filters). It is also widely used as a filter for digital television, GPS, wireless LAM, and the like.
ＳＡＷフィルタの製造プロセスでは、回転引き上げ法や二重るつぼ法でリチウムナイオベート（ＬｉＮｂＯ３）やリチウムタンタレート（ＬｉＴａＯ３）等の単結晶インゴットが育成され、その後、インゴットをウェーハ状にスライスした後、研削装置や研磨装置で研削、研摩して平坦化する（例えば、特開２００１−３３２９４９号公報参照）。 In the SAW filter manufacturing process, single crystal ingots such as lithium niobate (LiNbO 3 ) and lithium tantalate (LiTaO 3 ) are grown by the rotational pulling method or the double crucible method, and then the ingot is sliced into a wafer. Then, the surface is ground and polished by a grinding device or a polishing device (for example, see JP-A-2001-332949).
平坦化されたリチウムナイオベートウェーハ又はリチウムタンタレートウェーハ上には、フォトリソグラフィー技術を用いてアルミニウムやアルミニウム合金の薄膜で例えば周期２〜５μｍ程度の櫛歯電極からなるＳＡＷフィルタを複数形成する。 On the flattened lithium niobate wafer or lithium tantalate wafer, a plurality of SAW filters made of a comb-like electrode having a period of, for example, about 2 to 5 μm are formed by using a photolithography technique with a thin film of aluminum or aluminum alloy.
表面にＳＡＷフィルタ等のＳＡＷデバイスが複数形成されたリチウムナイオベートウェーハ（ＬＮウェーハ）又はリチウムタンタレートウェーハ（ＬＴウェーハ）はモース硬度が高く、切削ブレードで切削すると送り速度の上昇が難しく、生産性が非常に悪い。 Lithium niobate wafers (LN wafers) or lithium tantalate wafers (LT wafers) with multiple SAW devices such as SAW filters on the surface have high Mohs hardness, and it is difficult to increase the feed rate when cutting with a cutting blade. Is very bad.
従って、一般的な厚みの表面にＳＡＷデバイスが形成されたリチウムナイオベートウェーハ又はリチウムタンタレートウェーハでは、レーザ加工で分割起点を形成した後、ウェーハに外力を付与することにより個々のチップに分割している。 Therefore, in a lithium niobate wafer or lithium tantalate wafer in which a SAW device is formed on a surface having a general thickness, after dividing start points are formed by laser processing, the wafer is divided into individual chips by applying external force to the wafer. ing.
然し、ＬＮウェーハ又はＬＴウェーハに対して吸収性を有する波長のパルスレーザビームを照射するアブレーション加工方法又はＬＮウェーハ又はＬＴウェーハに対して透過性を有する波長のパルスレーザビームを照射してウェーハ内部に改質層を形成するＳＤ（Ｓｔｅａｌｔｈ Ｄｉｃｉｎｇ）加工方法では、１本の分割予定ラインに対して複数回パルスレーザービームを照射しなければならず、更なる生産性の向上が要望されている。 However, the ablation processing method for irradiating the LN wafer or the LT wafer with a pulsed laser beam having an absorptive wavelength, or irradiating the inside of the wafer with a pulsed laser beam having a wavelength transmissive for the LN wafer or LT wafer. In an SD (stealth dicing) processing method for forming a modified layer, it is necessary to irradiate a single division planned line with a pulse laser beam a plurality of times, and further improvement in productivity is desired.
そこで、特開２０１４−２２１４８３号公報では、比較的開口数の小さい集光レンズを使用して単結晶基板からなる被加工物に単結晶基板に対して透過性を有するパルスレーザビームを照射して、被加工物内部に細孔とこの細孔をシールドする非晶質とからなるシールドトンネルを形成した後、被加工物に外力を付与することにより被加工物を個々のチップに分割する加工方法が記載されている。 Therefore, in Japanese Patent Laid-Open No. 2014-2221483, a work piece made of a single crystal substrate is irradiated with a pulsed laser beam having transparency to the single crystal substrate using a condenser lens having a relatively small numerical aperture. A processing method for dividing a work piece into individual chips by applying an external force to the work piece after forming a shield tunnel composed of a fine pore and an amorphous material for shielding the fine hole inside the work piece Is described.
然し、特許文献２に記載された加工方法では、切削ブレードやパルスレーザビームを使用するＳＤ加工方法、アブレーション加工方法に比べて生産性は向上するが、切削ブレードによるダイシングに比較してチップの抗折強度が劣るという問題がある。 However, in the processing method described in Patent Document 2, the productivity is improved as compared with the SD processing method and the ablation processing method using a cutting blade or a pulsed laser beam, but the chip resistance is lower than the dicing with the cutting blade. There is a problem that the bending strength is inferior.
本発明はこのような点に鑑みてなされたものであり、その目的とするところは、生産性を向上させると共にチップの抗折強度を低下させることのない被加工物の加工方法を提供することである。 The present invention has been made in view of these points, and an object of the present invention is to provide a method for processing a workpiece that improves productivity and does not decrease the bending strength of the chip. It is.
本発明によると、交差する複数の分割予定ラインが表面に設定された被加工物の加工方法であって、被加工物の表面側をチャックテーブルで保持する保持ステップと、該チャックテーブルに保持された被加工物に対して透過性を有する波長のパルスレーザビームを被加工物の裏面側から照射して、被加工物の表面側から被加工物の仕上げ厚み以上に至る細孔と該細孔を囲繞する非晶質又は変質層とからなるシールドトンネルを複数形成するレーザ加工ステップと、該レーザ加工ステップを実施した後、被加工物の裏面を研削して該仕上げ厚みへと被加工物を薄化する研削ステップと、を備えたことを特徴とする被加工物の加工方法が提供される。 According to the present invention, there is provided a method of processing a workpiece in which a plurality of intersecting scheduled lines are set on the surface, the holding step of holding the surface side of the workpiece with the chuck table, and the chuck table A fine laser beam that is irradiated from the back side of the workpiece with a pulse laser beam having a wavelength that is transmissive to the workpiece, and that exceeds the finished thickness of the workpiece from the surface side of the workpiece; A laser processing step for forming a plurality of shield tunnels composed of an amorphous or altered layer surrounding the substrate, and after performing the laser processing step, the back surface of the workpiece is ground to the finished thickness. A thinning grinding step is provided. A method for processing a workpiece is provided.
本発明の加工方法によると、レーザ加工が１パスで済むので、従来のＳＤ加工やアブレーション加工によるレーザ加工に比べて生産性が向上する。また、シールドトンネルの上端部分は研削によって除去されてチップに残存しないため、抗折強度が向上する。 According to the processing method of the present invention, since the laser processing is only one pass, productivity is improved as compared with laser processing by conventional SD processing or ablation processing. In addition, since the upper end portion of the shield tunnel is removed by grinding and does not remain on the chip, the bending strength is improved.
更に、本発明では、レーザ加工後に被加工物の裏面の研削を実施して被加工物を仕上げ厚みに薄化すると共に研削負荷によって部分的に個々のチップに分割できるため、低出力のレーザビームによりシールドトンネルを形成することができ、レーザ加工後に研削を実施しない場合に比べてチップの抗折強度が向上する。 Furthermore, in the present invention, the back surface of the workpiece is ground after laser processing to reduce the workpiece to a finished thickness and can be partially divided into individual chips by a grinding load. Thus, a shield tunnel can be formed, and the bending strength of the chip is improved as compared with the case where grinding is not performed after laser processing.
以下、本発明の実施形態を図面を参照して詳細に説明する。図１は、リチウムナイオベート（ＬｉＮｂＯ３）ウェーハ１１の表面１１ａに保護テープ１７を貼着する様子を示す斜視図が示されている。リチウムナイオベートウェーハ（ＬＮウェーハ又は単にウェーハと称することがある）１１の表面１１ａには格子状に形成された複数の分割予定ライン１３により区画された各領域にＳＡＷフィルタ等のＳＡＷデバイス１５が形成されている。ＳＡＷデバイス１５はアルミニウムやアルミニウム合金の薄膜で例えば周期２〜５μｍ程度の櫛歯電極として形成されている。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a perspective view showing a state in which a protective tape 17 is attached to a surface 11a of a lithium niobate (LiNbO 3 ) wafer 11. A SAW device 15 such as a SAW filter is formed in each region partitioned by a plurality of division lines 13 formed in a lattice pattern on the surface 11a of a lithium niobate wafer (sometimes referred to as an LN wafer or simply a wafer) 11. Has been. The SAW device 15 is a thin film of aluminum or an aluminum alloy, and is formed as a comb electrode having a period of about 2 to 5 μm, for example.
ＬＮウェーハ１１の厚みは約３５０μｍであり、本実施形態の加工方法では、ＬＮウェーハ１１の裏面１１ｂを研削して厚み１３０μｍの仕上げ厚みへと薄化する研削ステップを含んでいる。 The thickness of the LN wafer 11 is about 350 μm, and the processing method of this embodiment includes a grinding step of grinding the back surface 11 b of the LN wafer 11 to a final thickness of 130 μm.
本実施形態の加工方法では、被加工物としてＬＮウェーハを採用した例について説明するが、被加工物はこれに限定されるものではなく、リチウムタンタレートウェーハ（ＬｉＴａＯ３ウェーハ）、ＳｉＣウェーハ、サファイアウェーハ、ＧａＮウェーハ、Ｓｉウェーハ、ガラスウェーハ等の他の被加工物も採用可能である。 In the processing method of the present embodiment, an example in which an LN wafer is employed as a workpiece will be described. However, the workpiece is not limited to this, and a lithium tantalate wafer (LiTaO 3 wafer), a SiC wafer, and sapphire Other workpieces such as wafers, GaN wafers, Si wafers, glass wafers and the like can also be employed.
ＬＮウェーハ１１の表面１１ａに保護テープ１７を貼着した後、図２に示すように、レーザ加工装置のチャックテーブル１０で保護テープ１７を下側にしてＬＮウェーハ１１を吸引保持し、ＬＮウェーハ１１の裏面１１ｂを露出させる。 After the protective tape 17 is attached to the surface 11a of the LN wafer 11, as shown in FIG. 2, the LN wafer 11 is sucked and held by the chuck table 10 of the laser processing apparatus with the protective tape 17 facing down. The back surface 11b is exposed.
次いで、図３に示すように、集光レンズ１２ａを有する集光器１２からＬＮウェーハ１１に対して透過性を有する波長のパルスレーザビームＬＢを照射して、ウェーハ１１の内部に複数のシールドトンネル１９を形成するレーザ加工ステップを実施する。 Next, as shown in FIG. 3, a pulse laser beam LB having a wavelength having transparency is applied to the LN wafer 11 from the condenser 12 having the condenser lens 12 a, so that a plurality of shield tunnels are formed inside the wafer 11. A laser processing step for forming 19 is performed.
ウェーハ１１の内部にシールドトンネル１９を形成するレーザ加工ステップでは、集光レンズ１２ａの開口数（ＮＡ）を単結晶基板であるＬＮウェーハ１１の屈折率で除した値を０．０５〜０．３５の範囲内に設定する。 In the laser processing step of forming the shield tunnel 19 inside the wafer 11, a value obtained by dividing the numerical aperture (NA) of the condenser lens 12a by the refractive index of the LN wafer 11 that is a single crystal substrate is 0.05 to 0.35. Set within the range.
リチウムナイオベートの屈折率は２．２であるから、集光レンズの１２ａの開口数（ＮＡ）を０．１〜０．７に設定するのが好ましい。例えば集光レンズ１２ａとして球面収差を有する集光レンズを使用する。 Since the refractive index of lithium niobate is 2.2, the numerical aperture (NA) of the condenser lens 12a is preferably set to 0.1 to 0.7. For example, a condenser lens having spherical aberration is used as the condenser lens 12a.
もしくは集光レンズの上流側や下流側にレンズを配設することで球面収差を生成するようにしてもよいし、レーザビーム自体が所定の拡がり角を持っているレーザビームをレーザビーム発振器から発振し、集光レンズで集光するようにしてもよい。 Alternatively, spherical aberration may be generated by disposing a lens upstream or downstream of the condenser lens, or a laser beam having a predetermined divergence angle is oscillated from a laser beam oscillator. However, the light may be condensed by a condenser lens.
従って、集光レンズで集光されたレーザビームに縦収差が生じた状態でウェーハにレーザビームを照射することにより、ウェーハ１１の内部にシールドトンネル１９を形成することができる。 Therefore, the shield tunnel 19 can be formed inside the wafer 11 by irradiating the wafer with the laser beam in a state where longitudinal aberration is generated in the laser beam collected by the condenser lens.
このレーザ加工ステップでは、所定の出力に制御されたパルスレーザビームＬＢの集光領域Ｐの上端部をウェーハ１１の表面１１ａから仕上げ厚みｔ１＋αの位置に位置付けて、パルスレーザビームＬＢをウェーハ１１の裏面１１ｂ側から照射する。 In this laser processing step, the upper end portion of the condensing region P of the pulsed laser beam LB controlled to a predetermined output is positioned at the position of the finishing thickness t1 + α from the surface 11a of the wafer 11, and the pulsed laser beam LB is placed on the back surface of the wafer 11. Irradiate from the 11b side.
すると、集光領域Ｐの上端部が位置付けられた位置からウェーハの表面１１ａに向かってパルスレーザビームＬＢの進行に伴って瞬間的にシールドトンネル１９が形成される。形成されたシールドトンネル１９の上端部とその周囲は他の領域に比べて強度が低下しているため、後の研削ステップでこの領域を研削除去することで形成されるデバイスチップの抗折強度が向上する。 Then, the shield tunnel 19 is instantaneously formed with the progress of the pulse laser beam LB from the position where the upper end portion of the condensing region P is positioned toward the surface 11a of the wafer. Since the strength of the upper end portion of the shield tunnel 19 and the periphery thereof is lower than that of other regions, the bending strength of the device chip formed by grinding and removing this region in the subsequent grinding step is reduced. improves.
ここで、レーザビームＬＢの集光領域Ｐという用語をしているのは、集光レンズ１２ａが球面収差を有するため、集光レンズ１２ａを通過するレーザビームＬＢの半径方向位置によりレーザビームＬＢの集光される位置が集光レンズ１２ａの光軸方向に異なるためであり、集光領域Ｐはウェーハ１１の厚み方向に延在する。 Here, the term “condensing region P of the laser beam LB” refers to the fact that the condensing lens 12a has spherical aberration, so that the position of the laser beam LB depends on the radial position of the laser beam LB passing through the condensing lens 12a. This is because the focused position differs in the optical axis direction of the condensing lens 12 a, and the condensing region P extends in the thickness direction of the wafer 11.
このように、集光領域Ｐをウェーハ１１の内部に延在するようにパルスレーザビームＬＢをウェーハ１１の裏面１１ｂ側から照射し、チャックテーブル１０を矢印Ｘ軸方向に所定の加工送り速度で加工送りすることにより、ウェーハ１１の内部に分割予定ライン１３に沿ってウェーハ１１の表面１１ａから仕上げ厚みｔ１＋αの長さのシールドトンネル１９を複数形成する。本実施形態では、仕上げ厚みｔ１を１３０μｍに設定し、αは例えば１０〜１５μｍに設定する。 In this manner, the pulse laser beam LB is irradiated from the back surface 11b side of the wafer 11 so as to extend the condensing region P inside the wafer 11, and the chuck table 10 is processed at a predetermined processing feed rate in the direction of the arrow X axis. By feeding, a plurality of shield tunnels 19 having a finish thickness t1 + α are formed from the surface 11a of the wafer 11 along the planned division line 13 inside the wafer 11. In this embodiment, the finishing thickness t1 is set to 130 μm, and α is set to 10 to 15 μm, for example.
シールドトンネル１９は直径１μｍ程度の細孔と、この細孔をシールドする非晶質（アモルファス）とから形成される。照射するパルスレーザビームＬＢの繰り返し周波数を５０ｋＨｚに設定し、加工送り速度を５００ｍｍ／ｓに設定すると、ウェーハ１１の分割予定ライン１３に沿って１０μｍの間隔でシールドトンネル１９が形成され、隣接する細孔間には一部クラックが生じた状態となる。 The shield tunnel 19 is formed of a pore having a diameter of about 1 μm and an amorphous material that shields the pore. When the repetition frequency of the irradiating pulse laser beam LB is set to 50 kHz and the processing feed rate is set to 500 mm / s, shield tunnels 19 are formed at intervals of 10 μm along the division line 13 of the wafer 11 and adjacent fine lines are formed. Some cracks are generated between the holes.
ウェーハ１１の内部にシールドトンネル１９を形成するレーザ加工ステップを、第１の方向に伸長する分割予定ラインに沿って次々と実施し、次いでチャックテーブル１０を９０°回転してから、第１の方向に直交する第２の方向に伸長する全ての分割予定ライン１３に沿って実施する。 The laser processing step for forming the shield tunnel 19 inside the wafer 11 is performed one after another along the planned dividing line extending in the first direction, and then the chuck table 10 is rotated by 90 ° before the first direction. It carries out along all the division | segmentation planned lines 13 extended in the 2nd direction orthogonal to.
ウェーハ１１の内部にシールドトンネル１９を形成するレーザ加工ステップの加工条件は、例えば以下のように設定される。 The processing conditions of the laser processing step for forming the shield tunnel 19 inside the wafer 11 are set as follows, for example.
波長 ：１０６４ｎｍ
平均出力 ：０．２〜０．５Ｗ
繰り返し周波数 ：２０〜５０ｋＨｚ
パルス幅 ：１０ｐｓ
集光スポット径 ：１０μｍ
加工送り速度 ：１００〜６００ｍｍ／ｓ
Wavelength: 1064nm
Average output: 0.2-0.5W
Repetition frequency: 20-50 kHz
Pulse width: 10 ps
Condensing spot diameter: 10 μm
Processing feed rate: 100 to 600 mm / s
尚、被加工物としてガラスを採用した場合には、ガラスは元々非晶質であるため、レーザ加工ステップを実施すると細孔とこの細孔をシールドする非晶質の変質層からなるシールドトンネルが形成される。 When glass is used as the workpiece, the glass is originally amorphous. Therefore, when the laser processing step is performed, a shield tunnel comprising pores and an amorphous altered layer that shields the pores is formed. It is formed.
ＬＮウェーハ１１の内部に形成するシールドトンネル１９は、図４（Ａ）に示すように、仕上げ厚みｔ１＋αの長さが望ましいが、レーザビームＬＢの出力を上げて、図４（Ｂ）に示すように、シールドトンネル１９をウェーハ１１の表面１１ａから裏面１１ｂにわたり形成するようにしてもよい。この場合には、前記レーザ加工条件において、平均出力を２〜４Ｗに上げるのが好ましい。 As shown in FIG. 4A, the shield tunnel 19 formed inside the LN wafer 11 preferably has a finish thickness t1 + α. As shown in FIG. 4B, the output of the laser beam LB is increased. In addition, the shield tunnel 19 may be formed from the front surface 11 a to the back surface 11 b of the wafer 11. In this case, it is preferable to increase the average output to 2 to 4 W under the laser processing conditions.
シールドトンネルの厚み＝仕上げ厚み＋αにおいて、好ましくはαは１０〜１５μｍに設定するが、この値以上でもよい。＋αが小さいと分割されたデバイスチップの抗折強度が向上するが、αを大きくして、図４（Ｂ）に示すように、シールドトンネル１９を表面１１ａから裏面１１ｂにわたり形成するとＬＮウェーハ１１の分割性が向上する。 In the thickness of shield tunnel = finished thickness + α, α is preferably set to 10 to 15 μm, but may be greater than this value. When + α is small, the bending strength of the divided device chip is improved. However, when α is increased and the shield tunnel 19 is formed from the front surface 11a to the back surface 11b as shown in FIG. Dividerability is improved.
ここで、デバイスチップの抗折強度を下げない加工条件で１パスのレーザビームの照射で形成できるシールドトンネルの厚み（長さ）は１５０μｍ程度であり、抗折強度を気にしなければ１パスで形成できるシールドトンネルの厚み（長さ）は２５０μｍ程度である。 Here, the thickness (length) of the shield tunnel that can be formed by one-pass laser beam irradiation under processing conditions that do not reduce the bending strength of the device chip is about 150 μm. The thickness (length) of the shield tunnel that can be formed is about 250 μm.
レーザ加工ステップを実施した後、ウェーハ１１の裏面１１ｂを研削してウェーハ１１を仕上げ厚みｔへと薄化すると共にウェーハ１１を部分的に個々のチップへと分割する研削ステップを実施する。 After performing the laser processing step, the back surface 11b of the wafer 11 is ground to thin the wafer 11 to the finished thickness t, and the grinding step is performed to partially divide the wafer 11 into individual chips.
研削ステップでは、図６に示すように、研削装置のチャックテーブル１４でウェーハ１１の保護テープ１７側を吸引保持し、ウェーハ１１の裏面１１ｂを露出させる。研削装置の研削ユニット１６は、モータにより回転駆動されるスピンドル１８と、スピンドル１８の先端に固定されたホイールマウント２０と、ホイールマウント２０に図示しないボルトにより着脱可能に装着された研削ホイール２２とを含む。研削ホイール２２は、環状のホイール基台２４と、ホイール基台２４の下端外周部に固着された複数の研削砥石２６とから構成される。 In the grinding step, as shown in FIG. 6, the protection tape 17 side of the wafer 11 is sucked and held by the chuck table 14 of the grinding apparatus, and the back surface 11 b of the wafer 11 is exposed. The grinding unit 16 of the grinding apparatus includes a spindle 18 that is rotationally driven by a motor, a wheel mount 20 that is fixed to the tip of the spindle 18, and a grinding wheel 22 that is detachably attached to the wheel mount 20 with bolts (not shown). Including. The grinding wheel 22 includes an annular wheel base 24 and a plurality of grinding wheels 26 fixed to the outer periphery of the lower end of the wheel base 24.
研削ステップでは、チャックテーブル１４に保持されたウェーハ１１に、図示しない研削送り機構を作動することにより研削ホイール２２の研削砥石２６を接触させ、所定の研削送り速度で研削ホイール２２を研削送りしながらチャックテーブル１４を矢印ａで示す方向に例えば３００ｒｐｍで回転しつつ、研削ホイール２２を矢印ｂで示す方向に例えば１５００〜２０００ｒｐｍで回転して、ＬＮウェーハ１１の研削を実施する。 In the grinding step, the grinding wheel 26 of the grinding wheel 22 is brought into contact with the wafer 11 held on the chuck table 14 by operating a grinding feed mechanism (not shown), and the grinding wheel 22 is ground and fed at a predetermined grinding feed speed. The LN wafer 11 is ground by rotating the chuck table 14 in the direction indicated by the arrow a at 300 rpm, for example, and rotating the grinding wheel 22 in the direction indicated by the arrow b at 1500 to 2000 rpm, for example.
好ましくは、研削ステップは粗研削ステップと、粗研削ステップ実施後の仕上げ研削ステップの２段階で実施する。粗研削ステップでは、＃１０００のビトリファイドボンド研削砥石２６を使用して、チャックテーブル１４を３００ｒｐｍで回転しつつ、研削ホイール２２を２０００ｒｐｍで回転しながら研削を実施する。 Preferably, the grinding step is performed in two stages: a rough grinding step and a finish grinding step after the rough grinding step. In the rough grinding step, grinding is performed using the # 1000 vitrified bond grinding wheel 26 while rotating the chuck table 14 at 300 rpm and rotating the grinding wheel 22 at 2000 rpm.
粗研削終了後の仕上げ研削ステップでは、＃３０００のビトリファイドボンド研削砥石２６を使用して、チャックテーブル１４を３００ｒｐｍで回転しつつ、研削ホイール２２を１５００ｒｐｍで回転しながら研削を実施して、ウェーハ１１を仕上げ厚みｔ１＝５０μｍまで薄化する。 In the finishing grinding step after the rough grinding, the # 11 vitrified bond grinding wheel 26 is used to perform grinding while rotating the chuck table 14 at 300 rpm and the grinding wheel 22 at 1500 rpm. Is thinned to a finish thickness t1 = 50 μm.
粗研削ステップ及び仕上げ研削ステップからなる研削ステップ中に、ウェーハ１１の裏面１１ｂには常に所定の研削負荷が掛かるため、この研削負荷によりウェーハ１１は分割予定ライン１３に沿ってシールドトンネル１９を破断起点に個々のデバイスチップに少なくとも部分的に分割される。 Since a predetermined grinding load is always applied to the back surface 11b of the wafer 11 during the grinding step including the rough grinding step and the finish grinding step, the wafer 11 causes the shield tunnel 19 to break along the dividing line 13 by this grinding load. Are at least partially divided into individual device chips.
尚、研削ステップでは、ウェーハ１１が分割予定ライン１３に沿ってシールドトンネル１９を破断起点に個々のデバイスチップへと完全には分割されない場合もあるため、研削ステップ終了後のウェーハ１１に外力を付与して、ウェーハ１１を分割予定ライン１３に沿って個々のチップへと完全に分割する分割ステップを実施するのが好ましい。 In the grinding step, the wafer 11 may not be completely divided into individual device chips along the scheduled division line 13 with the shield tunnel 19 as a starting point of breakage. Therefore, external force is applied to the wafer 11 after completion of the grinding step. Thus, it is preferable to carry out a dividing step of completely dividing the wafer 11 into individual chips along the scheduled dividing line 13.
研削ステップ終了後、図７に示すように、個々のデバイスチップに分割されたウェーハ１１の裏面１１ｂを、外周部が環状フレームＦに装着されたエキスパンドテープＴに貼着し、ウェーハ１１の表面１１ａから保護テープ１７を剥離する転写ステップを実施する。好ましくは、エキスパンドテープとして紫外線硬化型テープを採用する。 After completion of the grinding step, as shown in FIG. 7, the back surface 11b of the wafer 11 divided into individual device chips is attached to an expanding tape T having an outer peripheral portion attached to the annular frame F, and the surface 11a of the wafer 11 is attached. Then, a transfer step for peeling the protective tape 17 from is performed. Preferably, an ultraviolet curable tape is employed as the expanded tape.
転写ステップを実施した後、エキスパンドテープＴを拡張してエキスパンドテープＴに貼着されたウェーハ１１を個々のデバイスチップ２５に完全に分割すると共に、チップ間に間隔を形成する分割ステップを実施する。この分割ステップは、一例として図７に示すようなエキスパンド装置３０を用いて実施する。 After performing the transfer step, the expanding tape T is expanded to completely divide the wafer 11 attached to the expanding tape T into individual device chips 25, and a dividing step for forming an interval between the chips. This dividing step is performed using an expanding apparatus 30 as shown in FIG. 7 as an example.
エキスパンド装置３０は、環状フレームＦを保持するフレーム保持手段３２を備えている。フレーム保持手段３２は、環状のフレーム保持部材３４と、フレーム保持部材３４の外周に配設された固定手段としての複数のクランプ３６とから構成される。フレーム保持部材３４の上面は環状フレームＦを載置する載置面３４ａを形成しており、この載置面３４ａ上に環状フレームＦが載置される。 The expanding device 30 includes frame holding means 32 that holds the annular frame F. The frame holding means 32 includes an annular frame holding member 34 and a plurality of clamps 36 as fixing means disposed on the outer periphery of the frame holding member 34. An upper surface of the frame holding member 34 forms a placement surface 34a on which the annular frame F is placed, and the annular frame F is placed on the placement surface 34a.
そして、載置面３４ａ上に載置された環状フレームＦは、クランプ３６によって保持部材３４に固定される。この時、ウェーハ１１が貼着されたエキスパンドテープＴは拡張ドラム３８の上端に当接する。 The annular frame F placed on the placement surface 34 a is fixed to the holding member 34 by the clamp 36. At this time, the expanded tape T to which the wafer 11 is attached contacts the upper end of the expansion drum 38.
拡張ドラム３８の内部には保持テーブル４６が配設されており、保持テーブル４６の吸引保持部４６ａは吸引路４８及び電磁切替弁５０を介して吸引源５２に選択的に接続されている。 A holding table 46 is disposed inside the expansion drum 38, and a suction holding portion 46 a of the holding table 46 is selectively connected to a suction source 52 via a suction path 48 and an electromagnetic switching valve 50.
拡張ドラム３８の外側には環状のフレーム保持部材３２を上下方向に移動する駆動手段４０が配設されている。駆動手段４０は複数のエアシリンダ４２から構成されており、エアシリンダ４２のピストンロッド４４が保持部材３４の下面に連結されている。 Driving means 40 for moving the annular frame holding member 32 in the vertical direction is disposed outside the expansion drum 38. The driving means 40 is composed of a plurality of air cylinders 42, and the piston rod 44 of the air cylinder 42 is connected to the lower surface of the holding member 34.
複数のエアシリンダ４２から構成される駆動手段４０は、環状のフレーム保持部材３４をその載置面３４ａが拡張ドラム３８の上端と略同一高さとなる基準位置と、拡張ドラム３８の上端より所定量下方の拡張位置との間で上下方向に移動する。 The driving means 40 composed of a plurality of air cylinders 42 has an annular frame holding member 34 with a predetermined amount from the reference position where the mounting surface 34a is substantially flush with the upper end of the expansion drum 38 and the upper end of the expansion drum 38. Moves up and down between lower extended positions.
このように構成されたエキスパンド装置３０を使用した分割ステップでは、ウェーハ１１をエキスパンドテープＴを介して支持した環状フレームＦを、フレーム保持部材３４の載置面３４ａ上に載置し、クランプ３６によってフレーム保持部材３４に固定する。この時、フレーム保持部材３４はその載置面３４ａが拡張ドラム３８の上端と略同一高さとなる基準位置に位置付けられる。 In the dividing step using the expanding apparatus 30 configured as described above, the annular frame F that supports the wafer 11 via the expanding tape T is placed on the placing surface 34 a of the frame holding member 34, and is clamped by the clamp 36. Fix to the frame holding member 34. At this time, the frame holding member 34 is positioned at a reference position where the mounting surface 34 a is substantially at the same height as the upper end of the expansion drum 38.
次いで、エアシリンダ４２を駆動してフレーム保持部材３４を図７（Ｂ）に示す拡張位置に引き落とす。これにより、フレーム保持部材３４の載置面３４上に固定されている環状フレームＦも引き落とされるため、環状フレームＦに貼着されたエキスパンドテープＴは拡張ドラム３８の上端縁に当接して主に半径方向に拡張される。 Next, the air cylinder 42 is driven and the frame holding member 34 is pulled down to the extended position shown in FIG. As a result, the annular frame F fixed on the mounting surface 34 of the frame holding member 34 is also pulled down, so that the expanded tape T attached to the annular frame F abuts on the upper end edge of the expansion drum 38 and mainly. Expanded radially.
その結果、ウェーハ１１は分割予定ライン１３に沿って個々のデバイスチップ２５に完全に分割されると共に、隣接するデバイスチップ２５の間に間隔が形成される。エキスパンドテープＴを拡張した後、電磁切替弁５０を連通位置に切り換えて、保持テーブル４６の吸引保持部４６ａに吸引源５２の負圧を作用させて、ウェーハ１１をチップ２５間に間隔が形成された状態で保持する。 As a result, the wafer 11 is completely divided into the individual device chips 25 along the division line 13 and a space is formed between the adjacent device chips 25. After expanding the expanded tape T, the electromagnetic switching valve 50 is switched to the communication position, and the negative pressure of the suction source 52 is applied to the suction holding portion 46a of the holding table 46, so that a gap is formed between the wafer 11 and the chip 25. Hold in the state.
分割ステップ実施後、保持テーブル４６でエキスパンドテープＴを吸引保持した状態でエキスパンドテープＴに紫外線を照射して、エキスパンドテープＴの貼着力を低下させた後、ピックアップ装置でデバイスチップ２５をエキスパンドテープＴからピックアップする。 After performing the dividing step, the expanding tape T is sucked and held by the holding table 46, and the expanding tape T is irradiated with ultraviolet rays to reduce the adhesive force of the expanding tape T, and then the device chip 25 is attached to the expanding tape T by the pickup device. Pick up from.
上述した実施形態によると、レーザ加工後にウェーハ１１の裏面研削を実施するため、研削負荷によってウェーハ１１が個々のチップに少なくとも部分的に分割される。よって、研削を実施しない場合に比べて低出力のレーザ加工でもチップへと分割し得るため、レーザ加工後に研削を実施しない場合に比べてデバイスチップの抗折強度が向上する。更に、シールドトンネルの上端部分は研削によって除去されてチップに残存しないため、デバイスチップの抗折強度が向上する。 According to the above-described embodiment, in order to perform back surface grinding of the wafer 11 after laser processing, the wafer 11 is at least partially divided into individual chips by a grinding load. Therefore, since it can be divided into chips even with low-power laser processing as compared with the case where grinding is not performed, the bending strength of the device chip is improved as compared with the case where grinding is not performed after laser processing. Furthermore, since the upper end portion of the shield tunnel is removed by grinding and does not remain on the chip, the bending strength of the device chip is improved.
１１ リチウムナイオベートウェーハ（ＬＮウェーハ）
１２ 集光器
１２ａ 集光レンズ
１３ 分割予定ライン
１５ ＳＡＷデバイス
１６ 研削ユニット
１７ 保護テープ
１９ シールドトンネル
２１ 細孔
２２ 研削ホイール
２３ 非晶質
２５ デバイスチップ
２６ 研削砥石
３０ エキスパンド装置
３４ 保持部材
３８ 拡張ドラム
11 Lithium niobate wafer (LN wafer)
12 Condenser 12a Condenser Lens 13 Scheduled Divided Line 15 SAW Device 16 Grinding Unit 17 Protective Tape 19 Shield Tunnel 21 Pore 22 Grinding Wheel 23 Amorphous 25 Device Chip 26 Grinding Wheel 30 Expanding Device 34 Holding Member 38 Expansion Drum
Claims (3)
被加工物の表面側をチャックテーブルで保持する保持ステップと、
該チャックテーブルに保持された被加工物に対して透過性を有する波長のパルスレーザビームを被加工物の裏面側から照射して、被加工物の表面側から被加工物の仕上げ厚み以上に至る細孔と該細孔を囲繞する非晶質又は変質層とからなるシールドトンネルを複数形成するレーザ加工ステップと、
該レーザ加工ステップを実施した後、被加工物の裏面を研削して該仕上げ厚みへと被加工物を薄化する研削ステップと、
を備えたことを特徴とする被加工物の加工方法。 A workpiece processing method in which a plurality of intersecting division lines are set on the surface,
A holding step for holding the surface side of the workpiece with a chuck table;
A pulsed laser beam having a wavelength that is transmissive to the workpiece held on the chuck table is irradiated from the back side of the workpiece, and reaches the finished thickness of the workpiece from the surface side of the workpiece. A laser processing step of forming a plurality of shield tunnels composed of pores and an amorphous or altered layer surrounding the pores;
After performing the laser processing step, a grinding step of grinding the back surface of the workpiece to thin the workpiece to the finished thickness;
A method for processing a workpiece, comprising:
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| CN201810578439.0A CN109119336B (en) | 2017-06-22 | 2018-06-07 | Method for processing object to be processed |
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| JP6324796B2 (en) * | 2014-04-21 | 2018-05-16 | 株式会社ディスコ | Single crystal substrate processing method |
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| JP2016171214A (en) * | 2015-03-12 | 2016-09-23 | 株式会社ディスコ | Processing method of single crystal substrate |
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| JP2020132476A (en) * | 2019-02-20 | 2020-08-31 | 株式会社ディスコ | Method of manufacturing at least one of chip and frame body |
| JP7218056B2 (en) | 2019-02-20 | 2023-02-06 | 株式会社ディスコ | Method for manufacturing at least one of chip and frame |
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