TW201907456A - Processing method of processed objects - Google Patents
Processing method of processed objects Download PDFInfo
- Publication number
- TW201907456A TW201907456A TW107115377A TW107115377A TW201907456A TW 201907456 A TW201907456 A TW 201907456A TW 107115377 A TW107115377 A TW 107115377A TW 107115377 A TW107115377 A TW 107115377A TW 201907456 A TW201907456 A TW 201907456A
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- workpiece
- grinding
- processed object
- processing
- Prior art date
Links
- 238000003672 processing method Methods 0.000 title claims abstract description 14
- 239000011148 porous material Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 8
- 235000012431 wafers Nutrition 0.000 claims description 108
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 238000005452 bending Methods 0.000 abstract description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 6
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 230000004075 alteration Effects 0.000 description 4
- 238000002679 ablation Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
Abstract
Description
本發明關於被加工物的加工方法，在該被加工物的表面設定有交叉的複數條分割預定劃線。This invention relates to the processing method of a to-be-processed object. The surface of the to-be-processed object is provided with the multiple predetermined division line which cross | intersects.
取出特定頻帶的電氣信號之SAW濾波器(Surface Acoustic Wave Filter：表面聲波濾波器)，係作為RF濾波器(Radio Frequency Filter)或IF濾波器(Intermediate Frequency Filter)除了使用於大部分的行動電話以外，亦廣泛使用於數位電視或GPS、無線LAM(無線區域網路)等之濾波器。The SAW filter (Surface Acoustic Wave Filter) that takes out electrical signals in a specific frequency band is used as an RF filter (Radio Frequency Filter) or IF filter (Intermediate Frequency Filter). It is used in most mobile phones. , Also widely used in digital TV or GPS, wireless LAM (wireless local area network) filters.
在SAW濾波器的製程中，利用旋轉拉升法或雙坩堝法成長鈮酸鋰(LiNbO3 )或鉭酸鋰(LiTaO3 )等之單結晶晶棒之後，將晶棒切片成為晶圓狀之後，藉由研削裝置或研磨裝置進行研削，實施研磨使平坦化(例如參照特開2001-332949號公報)。In the manufacturing process of the SAW filter, a single crystal ingot such as lithium niobate (LiNbO 3 ) or lithium tantalate (LiTaO 3 ) is grown by a spin-up method or a double crucible method, and then the ingot is sliced into a wafer shape. Grinding is performed by a grinding device or a grinding device, and grinding is performed to flatten it (for example, refer to Japanese Patent Application Laid-Open No. 2001-332949).
在已平坦化的鈮酸鋰晶圓或鉭酸鋰晶圓上，使用光微影技術(Photolithography)藉由鋁或鋁合金的薄膜例如形成由週期2~5μm左右的梳齒電極構成的複數個SAW濾波器。On a flattened lithium niobate wafer or lithium tantalate wafer, a plurality of comb electrodes having a period of about 2 to 5 μm are formed from a thin film of aluminum or an aluminum alloy using photolithography (Photolithography). SAW filter.
表面形成有複數個SAW濾波器等之SAW元件的鈮酸鋰晶圓(LN晶圓)或鉭酸鋰晶圓(LT晶圓)，其莫氏硬度(Mohs hardness)高，藉由切割刀片切削時進給速度的上升困難，生產性極差。A lithium niobate wafer (LN wafer) or a lithium tantalate wafer (LT wafer) having a plurality of SAW elements such as a SAW filter formed on the surface has a high Mohs hardness and is cut by a cutting blade It is difficult to increase the feed rate at this time, and productivity is extremely poor.
因此，在一般的厚度的表面形成有SAW元件之鈮酸鋰晶圓或鉭酸鋰晶圓中，藉由雷射加工形成分割起點之後，對晶圓賦予外力而將其分割成為各個晶片。Therefore, in a lithium niobate wafer or a lithium tantalate wafer having a SAW element formed on a surface of a general thickness, after the division starting point is formed by laser processing, an external force is applied to the wafer to divide it into individual wafers.
但是，對LN晶圓或LT晶圓照射具有吸收性的波長之脈衝雷射束的消熔(ablation)加工方法，或對LN晶圓或LT晶圓照射具有透過性的波長之脈衝雷射束而在晶圓內部形成改質層的SD(隱形切割(stealth dicing)加工方法中，必須對1條分割預定劃線照射複數次脈衝雷射束，期待著生產性之進一步提升。However, an ablation processing method of irradiating an LN wafer or an LT wafer with a pulsed laser beam having an absorptive wavelength, or irradiating an LN wafer or an LT wafer with a pulsed laser beam having a transmissive wavelength is used. In the SD (stealth dicing) processing method in which a modified layer is formed inside the wafer, one divided predetermined scribe line must be irradiated with a plurality of pulsed laser beams, and further improvements in productivity are expected.
於此，特開2014-221483號公報中記載，使用數值口徑(numerical aperture)較小的聚光透鏡對由單結晶基板構成的被加工物照射對於單結晶基板具有透過性的脈衝雷射束，在被加工物內部形成由細孔與屏蔽該細孔之非晶質所構成的屏蔽隧道之後，對被加工物賦予外力，據此而將被加工物分割成為各個晶片的加工方法。 [先前技術文獻] [專利文獻]Here, Japanese Unexamined Patent Publication No. 2014-221483 describes that a condensing lens having a small numerical aperture is used to irradiate a workpiece made of a single crystal substrate with a pulsed laser beam that is transparent to the single crystal substrate. After forming a shield tunnel composed of a pore and an amorphous material that shields the pore, an external force is applied to the work, and the work is divided into individual wafers based on the method. [Prior Art Literature] [Patent Literature]
[專利文獻1] 特開2001-332949號公報 [專利文獻2] 特開2014-221483號公報[Patent Document 1] JP 2001-332949 [Patent Document 2] JP 2014-221483
[發明所欲解決之課題][Problems to be Solved by the Invention]
但是，專利文獻2記載的加工方法中，和使用切割刀片或脈衝雷射束的SD加工方法、消熔加工方法比較可以提升生產性，但和藉由切割刀片之切割比較，存在晶片的抗折強度劣化之問題。However, in the processing method described in Patent Document 2, productivity can be improved as compared with the SD processing method and the ablation processing method using a dicing blade or a pulsed laser beam. However, compared with the dicing by a dicing blade, the wafer has resistance to folding. The problem of strength deterioration.
本發明有鑑於此點而完成者，目的在於提供可以提升生產性之同時，不會降低晶片的抗折強度之被加工物的加工方法。 [用以解決課題的手段]The present invention has been made in view of this point, and an object thereof is to provide a method for processing a workpiece which can improve productivity while not reducing the bending strength of a wafer. [Means to solve the problem]
依據本發明，提供一種被加工物的加工方法，係表面設定有交叉的複數條分割預定劃線之被加工物的加工方法，其特徵為具備：藉由工作台(Chuck table)對被加工物的表面側進行保持的保持步驟；對保持於該工作台的被加工物從被加工物的背面側照射具有透過性之波長的脈衝雷射束，形成複數個屏蔽隧道的雷射加工步驟，該屏蔽隧道係由從被加工物的表面側到達被加工物的精加工厚度以上之細孔與圍繞該細孔之非晶質或變質層所構成；及在實施該雷射加工步驟之後，研削被加工物的背面使被加工物薄至該精加工厚度的研削步驟。 [發明效果]According to the present invention, there is provided a method for processing a workpiece, which is a method for processing a workpiece having a plurality of intersecting and dividing predetermined scribe lines on its surface, which is characterized in that the workpiece is processed by a table (Chuck table). A holding step of holding on the front side of the workpiece; a laser processing step of irradiating a pulsed laser beam having a wavelength of transmissivity to the workpiece held on the table from the back side of the workpiece to form a plurality of shielded tunnels; The shield tunnel is composed of pores with a thickness greater than the finishing thickness of the workpiece from the surface side of the workpiece and an amorphous or deteriorated layer surrounding the pores; and after the laser processing step is performed, A grinding step in which the back surface of the workpiece is thinned to the finish thickness. [Inventive effect]
依據本發明的加工方法，單次(one pass)雷射加工即可完成，和習知基於SD加工或消熔加工的雷射加工比較可以提升生產性。又，屏蔽隧道的上端部分經由研削被除去而不殘留於晶片，因此抗折強度可以提升。According to the processing method of the present invention, one-pass laser processing can be completed, and productivity can be improved compared with conventional laser processing based on SD processing or ablation processing. In addition, since the upper end portion of the shield tunnel is removed by grinding and does not remain on the wafer, the bending strength can be improved.
另外，本發明中，在雷射加工後對被加工物的背面實施研削對被加工物實施精加工使厚度薄化之同時，可以藉由研削負荷局部性分割成為各個晶片，因此可以藉由低輸出的雷射束形成屏蔽隧道，和雷射加工後不實施研削之情況下比較可以提升晶片的抗折強度。In addition, in the present invention, after the laser processing is performed on the back surface of the workpiece, the workpiece is finished and the thickness is reduced. At the same time, the wafer can be locally divided into individual wafers by the grinding load. The output laser beam forms a shield tunnel, which can improve the flexural strength of the wafer compared with the case where no grinding is performed after laser processing.
以下，參照圖面詳細說明本發明之實施形態。圖1表示在鈮酸鋰(LiNbO3 )晶圓11的表面11a黏貼保護帶17的模樣之斜視圖。在鈮酸鋰晶圓(稱為LN晶圓或簡單稱為晶圓)11的表面11a在形成為格子狀的經由複數條分割預定劃線13劃定之各區域形成有SAW濾波器等之SAW元件15。SAW元件15係藉由鋁或鋁合金的薄膜例如形成為週期2~5μm左右的梳齒電極。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a perspective view showing a state in which a protective tape 17 is adhered to a surface 11 a of a lithium niobate (LiNbO 3 ) wafer 11. SAW filters and the like are formed on the surface 11a of a lithium niobate wafer (referred to as an LN wafer or simply referred to as a wafer) 11 in a region formed in a grid pattern by a plurality of divided division lines 13. Element 15. The SAW element 15 is formed by a thin film of aluminum or an aluminum alloy, for example, as a comb-shaped electrode having a period of about 2 to 5 μm.
LN晶圓11的厚度約350μm，本實施形態的加工方法中，包含對LN晶圓11的背面11b進行研削使變薄為厚度130μm的精加工厚度之研削步驟。The thickness of the LN wafer 11 is about 350 μm. The processing method of this embodiment includes a grinding step of grinding the back surface 11 b of the LN wafer 11 to a thickness of 130 μm.
本實施形態的加工方法中，說明採用LN晶圓作為被加工物之例，但被加工物不限定於此，亦可以採用鉭酸鋰晶圓(LiTaO3 晶圓)、SiC晶圓、藍寶石晶圓、GaN晶圓、Si晶圓、玻璃晶圓等之其他被加工物。In the processing method of this embodiment, an example in which an LN wafer is used as a workpiece is described, but the workpiece is not limited to this, and a lithium tantalate wafer (LiTaO 3 wafer), a SiC wafer, and a sapphire crystal may be used. Other processed objects such as wafers, GaN wafers, Si wafers, and glass wafers.
在LN晶圓11的表面11a黏貼保護帶17之後，如圖2所示，藉由雷射加工裝置的工作台10以保護帶17為下側對LN晶圓11進行吸引保持，使LN晶圓11的背面11b露出。After the protective tape 17 is adhered to the surface 11a of the LN wafer 11, as shown in FIG. 2, the LN wafer 11 is sucked and held by the table 10 of the laser processing apparatus with the protective tape 17 as the lower side, so that the LN wafer The back surface 11b of 11 is exposed.
接著，如圖3所示，實施雷射加工步驟，亦即從具有聚光透鏡12a的聚光器12對LN晶圓11照射具有透過性之波長的脈衝雷射束LB，在晶圓11的內部形成複數個屏蔽隧道19。Next, as shown in FIG. 3, a laser processing step is performed, that is, the LN wafer 11 is irradiated with a pulsed laser beam LB having a transmissive wavelength from the condenser 12 having the condenser lens 12 a, A plurality of shielding tunnels 19 are formed inside.
在晶圓11的內部形成屏蔽隧道19的雷射加工步驟中，將聚光透鏡12a的數值口徑(NA)除以單結晶基板亦即LN晶圓11的折射率之值設為0.05~0.35的範圍內。In the laser processing step of forming the shield tunnel 19 inside the wafer 11, the value of the numerical aperture (NA) of the condenser lens 12a divided by the single crystal substrate, that is, the refractive index of the LN wafer 11 is set to 0.05 to 0.35. Within range.
鈮酸鋰的折射率為2.2，因此將聚光透鏡的12a的數值口徑(NA)設為0.1~0.7為較好。例如使用具有球面像差的聚光透鏡作為聚光透鏡12a。Since the refractive index of lithium niobate is 2.2, it is preferable to set the numerical aperture (NA) of 12a of the condenser lens to 0.1 to 0.7. As the condenser lens 12a, for example, a condenser lens having a spherical aberration is used.
或者是，藉由在聚光透鏡的上游側或下游側配設透鏡而生成球面像差亦可，從雷射束振盪器振盪生成雷射束本身具有規定的發散角之雷射束，並通過聚光透鏡進行聚光亦可。Alternatively, a spherical aberration may be generated by arranging a lens on the upstream or downstream side of the condenser lens, and a laser beam with a predetermined divergence angle of the laser beam itself is oscillated from the laser beam oscillator and passed through Condensing lenses may also be used for focusing.
因此，在通過聚光透鏡聚光的雷射束產生友縱向像差之狀態下對晶圓照射雷射束，據此，可以在晶圓11的內部形成屏蔽隧道19。Therefore, the laser beam is irradiated to the wafer in a state in which the laser beam condensed by the condenser lens generates a longitudinal aberration, and accordingly, a shield tunnel 19 can be formed inside the wafer 11.
該雷射加工步驟中，使被控制為規定的輸出之脈衝雷射束LB的聚光區域P的上端部之位置位處在從晶圓11的表面11a算起精加工厚度t1+α的位置，從晶圓11的背面11b側照射脈衝雷射束LB。In this laser processing step, the position of the upper end portion of the light-concentrating region P of the pulsed laser beam LB controlled to a predetermined output is located at the position of the finishing thickness t1 + α from the surface 11a of the wafer 11 A pulsed laser beam LB is irradiated from the back surface 11b side of the wafer 11.
如此則，伴隨著從聚光區域P的上端部所位處的位置朝向晶圓的表面11a進行脈衝雷射束LB之照射的進行而瞬間形成屏蔽隧道19。形成的屏蔽隧道19的上端部與其周圍之強度比起其他區域之強度降低，因此藉由之後的研削步驟研削除去該區域可以提升形成的元件晶片的抗折強度。In this way, the shielding tunnel 19 is instantaneously formed as the pulsed laser beam LB is irradiated from the position where the upper end portion of the light-concentrating region P is located toward the surface 11 a of the wafer. The strength of the upper end portion of the shield tunnel 19 and its surroundings is lower than that of other areas. Therefore, the removal strength of the formed element wafer can be improved by grinding and removing this area by a subsequent grinding step.
於此，之所以使用雷射束LB的聚光區域P的用語，係因為聚光透鏡12a具有球面像差，因此基於通過聚光透鏡12a的雷射束LB的半徑方向位置使雷射束LB被聚光之位置在聚光透鏡12a的光軸方向不同，因此聚光區域P朝向晶圓11的厚度方向延伸。Here, the reason why the term “condensing region P” of the laser beam LB is used is because the condenser lens 12a has a spherical aberration. Therefore, the laser beam LB is made based on the radial position of the laser beam LB passing through the condenser lens 12a. The light-condensing position is different in the optical axis direction of the condenser lens 12 a, so the light-concentrating region P extends in the thickness direction of the wafer 11.
如此般，以使聚光區域P向晶圓11的內部延伸的方式從晶圓11的背面11b側照射脈衝雷射束LB，使工作台10沿著箭頭X軸方向按規定的加工進給速度進行加工進給，據此，在晶圓11的內部沿著分割預定劃線13形成複數個從晶圓11的表面11a算起精加工厚度t1+α的長度的屏蔽隧道19。本實施形態中，將精加工厚度t1設定為130μm，α例如設定為10~15μm。In this manner, a pulsed laser beam LB is irradiated from the back surface 11b side of the wafer 11 so that the light-concentrating region P extends toward the inside of the wafer 11, and the stage 10 is moved at a predetermined processing feed rate in the direction of the arrow X axis. Based on the processing feed, a plurality of shield tunnels 19 having a length of t1 + α from the surface 11a of the wafer 11 are formed in the wafer 11 along the planned division line 13. In this embodiment, the finishing thickness t1 is set to 130 μm, and α is set to, for example, 10 to 15 μm.
屏蔽隧道19由直徑1μm左右的細孔、及對該細孔進行屏蔽的非晶質(amorphous)形成。照射的脈衝雷射束LB的重複頻率設為50kHz，加工進給速度設為500mm/s時，沿著晶圓11的分割預定劃線13按10μm之間隔形成屏蔽隧道19，成為在相鄰的細孔間產生局部裂紋之狀態。The shield tunnel 19 is formed of a pore having a diameter of about 1 μm, and an amorphous material that shields the pore. When the repetition frequency of the irradiated pulsed laser beam LB is set to 50 kHz and the processing feed rate is set to 500 mm / s, shielded tunnels 19 are formed at intervals of 10 μm along the planned scribe line 13 of the wafer 11 to be adjacent to each other. A state where local cracks occur between pores.
沿著向第1方向延伸的分割預定劃線依序實施在晶圓11的內部形成屏蔽隧道19的雷射加工步驟，接著，使工作台10旋轉90°之後，沿著向與第1方向正交的第2方向延伸的全部分割預定劃線13實施。The laser processing steps for forming the shield tunnel 19 inside the wafer 11 are sequentially performed along the predetermined scribe lines extending in the first direction. Then, the table 10 is rotated by 90 °, and then is aligned with the first direction. All divisions extending in the intersecting second direction are planned to be performed with a scribe line 13.
在晶圓11的內部形成屏蔽隧道19的雷射加工步驟的加工條件，例如設為以下。The processing conditions of the laser processing step of forming the shield tunnel 19 in the wafer 11 are, for example, as follows.
採用玻璃作為被加工物之情況下，玻璃原本為非晶質，因此實施雷射加工步驟時，形成由細孔、及屏蔽該細孔的非晶質之變質層構成的屏蔽隧道。In the case where glass is used as the object to be processed, the glass is originally amorphous. Therefore, when the laser processing step is performed, a shield tunnel formed of a pore and an amorphous modified layer that shields the pore is formed.
形成於LN晶圓11的內部之屏蔽隧道19，如圖4(A)所示，較好為精加工厚度t1+α的長度，但亦可以如圖4(B)所示，提高雷射束LB的輸出，而將屏蔽隧道19從晶圓11的表面11a遍及背面11b形成。該情況下，上述雷射加工條件中，較好是將平均輸出提高為2~4W。As shown in FIG. 4 (A), the shield tunnel 19 formed inside the LN wafer 11 is preferably the length of the finishing thickness t1 + α, but the laser beam can also be raised as shown in FIG. 4 (B). The output of LB forms the shield tunnel 19 from the front surface 11a of the wafer 11 to the back surface 11b. In this case, in the above laser processing conditions, it is preferable to increase the average output to 2 to 4W.
在屏蔽隧道的厚度=精加工厚度+α中，較好是將α設為10~15μm，但亦可以為該值以上。+α較小時分割出的元件晶片的抗折強度可以提升，但增大α，如圖4(B)所示，將屏蔽隧道19從表面11a遍及背面11b形成時可以提升LN晶圓11的分割性。In the thickness of the shield tunnel = finished thickness + α, α is preferably set to 10 to 15 μm, but it may be more than this value. When the + α is small, the flexural strength of the divided component wafer can be improved, but as the α is increased, as shown in FIG. 4 (B), when the shield tunnel 19 is formed from the surface 11a to the back surface 11b, the LN wafer 11 can be improved. Severability.
在不降低元件晶片的抗折強度之加工條件下藉由單次的雷射束的照射可以形成的屏蔽隧道的厚度(長度)為150μm左右，若不在意抗折強度則單次可以形成的屏蔽隧道的厚度(長度)為250μm左右。The thickness (length) of the shield tunnel that can be formed by a single laser beam irradiation under processing conditions that do not reduce the flexural strength of the element wafer is about 150 μm. If you do not care about the flexural strength, the shield that can be formed in a single pass The thickness (length) of the tunnel is about 250 μm.
實施雷射加工步驟之後，實施對晶圓11的背面11b進行研削使晶圓11變薄為精加工厚度t之同時，將晶圓11局部性分割成為各個晶片的研削步驟。After the laser processing step is performed, grinding is performed on the back surface 11b of the wafer 11 to reduce the thickness of the wafer 11 to the finishing thickness t, and the grinding step is performed to locally divide the wafer 11 into individual wafers.
研削步驟中，如圖6所示，藉由研削裝置的工作台14吸附保持晶圓11的保護帶17側，使晶圓11的背面11b露出。研削裝置的研削單元16包含：經由馬達旋轉驅動的心軸18；固定於心軸18的前端的車輪裝置(wheel mount)20；及在車輪裝置20藉由未圖示的螺栓以可以裝拆的方式安裝的研削輪22。研削輪22係由環狀的輪基台24、及固定在輪基台24的下端外周部之複數個研削磨石26構成。In the grinding step, as shown in FIG. 6, the protective tape 17 side of the wafer 11 is held and held by the table 14 of the grinding apparatus to expose the back surface 11 b of the wafer 11. The grinding unit 16 of the grinding device includes: a spindle 18 that is rotationally driven by a motor; a wheel mount 20 fixed to the front end of the spindle 18; and a wheel device 20 that can be attached and detached by bolts (not shown). Way mounted grinding wheel 22. The grinding wheel 22 is composed of a ring-shaped wheel base 24 and a plurality of grinding wheels 26 fixed to the outer peripheral portion of the lower end of the wheel base 24.
研削步驟中，藉由作動未圖示的研削進給機構使研削輪22的研削磨石26接觸工作台14所保持的晶圓11，按規定的研削進給速度一邊使研削輪22研削進給一邊使工作台14沿著箭頭a所示方向例如以300rpm旋轉，並使研削輪22沿著箭頭b所示方向例如按1500~2000rpm旋轉，對LN晶圓11實施研削。In the grinding step, the grinding wheel 26 of the grinding wheel 22 is brought into contact with the wafer 11 held by the table 14 by operating a grinding feed mechanism (not shown), and the grinding wheel 22 is ground and fed at a predetermined grinding feed rate. While the table 14 is rotated in the direction shown by arrow a, for example, at 300 rpm, and the grinding wheel 22 is rotated in the direction shown by arrow b, for example, at 1500 to 2000 rpm, the LN wafer 11 is ground.
較好是，研削步驟按粗研削步驟、及粗研削步驟實施後的精加工研削步驟的2階段實施。粗研削步驟中，使用#1000的玻璃化熔結研削磨石26，使工作台14以300rpm旋轉之同時，使研削輪22以2000rpm旋轉而實施研削。Preferably, the grinding step is carried out in two stages of a rough grinding step and a finishing grinding step after the rough grinding step is performed. In the rough grinding step, a vitrified frit grinding grindstone 26 of # 1000 was used, and while the table 14 was rotated at 300 rpm, the grinding wheel 22 was rotated at 2000 rpm to perform grinding.
在粗研削結束後的精加工研削步驟中，使用#3000的玻璃化熔結研削磨石26，使工作台14以300rpm旋轉之同時，使研削輪22以1500rpm旋轉而實施研削，直至晶圓11薄化成為精加工厚度t1=50μm。In the finishing grinding step after the rough grinding, the vitrified frit grinding grindstone 26 of # 3000 is used, while the table 14 is rotated at 300 rpm, and the grinding wheel 22 is rotated at 1500 rpm to perform grinding until the wafer 11 The thickness is reduced to a finishing thickness t1 = 50 μm.
在由粗研削步驟及精加工研削步驟構成的研削步驟中，在晶圓11的背面11b常時被施加規定的研削負荷，因此通過該研削負荷使晶圓11沿著分割預定劃線13且以屏蔽隧道19斷裂起點而至少局部性分割成為各個元件晶片。In the grinding step consisting of the rough grinding step and the finishing grinding step, a predetermined grinding load is always applied to the back surface 11 b of the wafer 11. Therefore, the wafer 11 is shielded along the predetermined division line 13 by the grinding load and shielded. The tunnel 19 is fractured at least locally and divided into individual element wafers.
又，研削步驟中，晶圓11未能完全沿著分割預定劃線13以屏蔽隧道19為斷裂起點而分割成為各個元件晶片之情況亦有可能存在，因此實施對研削步驟結束後的晶圓11賦予外力，使晶圓11沿著分割預定劃線13完全分割成為各個晶片較好。In the grinding step, the wafer 11 may not be completely divided into individual element wafers along the planned division line 13 with the shield tunnel 19 as the fracture starting point. Therefore, the wafer 11 after the completion of the grinding step may be implemented. It is preferable to apply external force to completely divide the wafer 11 into individual wafers along the planned division line 13.
研削步驟結束後，如圖7所示，實施對已分割成為各個元件晶片的晶圓11的背面11b黏貼在外周部裝配有環狀框架F的擴展帶T，從晶圓11的表面11a將保護帶17剝離的轉印步驟。較好是使用紫外線硬化型帶作為擴展帶。After the grinding step is completed, as shown in FIG. 7, the back surface 11 b of the wafer 11 that has been divided into individual element wafers is adhered to an extension tape T equipped with a ring-shaped frame F on the outer periphery and protected from the surface 11 a of the wafer 11 Transfer step for peeling of the belt 17. It is preferable to use a UV-curable tape as the extension tape.
實施轉印步驟之後，實施：使擴展帶T擴展而將黏貼於擴展帶T的晶圓11完全分割成為各個元件晶片25之同時，在晶片間形成間隔的分割步驟。該分割步驟之一例係使用如圖7所示擴展裝置30實施。After the transfer step is performed, a dividing step is performed in which the extension tape T is expanded and the wafer 11 adhered to the extension tape T is completely divided into individual element wafers 25 while a gap is formed between the wafers. An example of this division step is performed using the expansion device 30 as shown in FIG. 7.
擴展裝置30具備保持環狀框架F的框架保持手段32。框架保持手段32係由環狀的框架保持構件34、及配置於框架保持構件34的外周之作為固定手段的複數個夾具36構成。框架保持構件34的上面形成為載置環狀框架F之載置面34a，環狀框架F被載置於該載置面34a上。The expansion device 30 includes a frame holding means 32 that holds the ring frame F. The frame holding means 32 is composed of a ring-shaped frame holding member 34 and a plurality of jigs 36 as fixing means, which are arranged on the outer periphery of the frame holding member 34. The upper surface of the frame holding member 34 is formed as a mounting surface 34 a on which the ring-shaped frame F is placed, and the ring-shaped frame F is placed on the mounting surface 34 a.
載置於載置面34a上的環狀框架F，係藉由夾具36被固定於保持構件34。此時，黏貼有晶圓11的擴展帶T頂接於擴展滾筒38的上端。The ring frame F placed on the mounting surface 34 a is fixed to the holding member 34 by a clamp 36. At this time, the extension tape T to which the wafer 11 is adhered is abutted on the upper end of the extension roller 38.
在擴展滾筒38的內部配置有保持台46，保持台46的吸附保持部46a係經由吸附路48及電磁切換閥50選擇性連接於吸附源52。A holding table 46 is arranged inside the expansion drum 38, and the suction holding section 46 a of the holding table 46 is selectively connected to the suction source 52 via the suction path 48 and the electromagnetic switching valve 50.
在擴展滾筒38的外側配設有使環狀的框架保持構件32沿上下方向移動的驅動手段40。驅動手段40由複數個汽缸42構成，汽缸42的活塞桿44連結於保持構件34的下面。A driving means 40 for moving the ring-shaped frame holding member 32 in the vertical direction is provided on the outside of the expansion drum 38. The driving means 40 includes a plurality of cylinders 42, and a piston rod 44 of the cylinder 42 is connected to a lower surface of the holding member 34.
複數個汽缸42所構成的驅動手段40，使環狀的框架保持構件34，在其載置面34a成為與擴展滾筒38的上端大致同一高度之基準位置，和比起擴展滾筒38的上端低規定量之下側的擴展位置之間沿著上下方向移動。The driving means 40 constituted by the plurality of cylinders 42 makes the annular frame holding member 34 a reference position at the same height as the upper end of the expansion drum 38 on the mounting surface 34 a thereof, and is lower than the upper end of the expansion drum 38. The extended position on the lower side moves in the up-down direction.
在使用如此般構成的擴展裝置30之分割步驟中，將透過擴展帶T支撐有晶圓11的環狀框架F，載置於框架保持構件34的載置面34a上，藉由夾具36將其固定於框架保持構件34。此時，框架保持構件34之位置位處在其載置面34a成為與擴展滾筒38的上端大致同一高度之基準位置。In the dividing step using the expansion device 30 configured as described above, the ring-shaped frame F on which the wafer 11 is supported by the expansion tape T is placed on the mounting surface 34 a of the frame holding member 34, and the ring frame F is held by the holder 36. It is fixed to the frame holding member 34. At this time, the position of the frame holding member 34 is a reference position at which the placement surface 34 a becomes substantially the same height as the upper end of the expansion drum 38.
接著，驅動汽缸42把框架保持構件34拉下至圖7(B)所示擴展位置。據此，固定於框架保持構件34的載置面34上的環狀框架F亦被拉下，因此黏貼於環狀框架F的擴展帶T抵接在擴展滾筒38的上端緣而主要沿著半徑方向擴展。Next, the driving cylinder 42 pulls down the frame holding member 34 to the extended position shown in FIG. 7 (B). According to this, the ring frame F fixed on the mounting surface 34 of the frame holding member 34 is also pulled down. Therefore, the expansion tape T adhered to the ring frame F abuts the upper end edge of the expansion drum 38 and mainly follows the radius. Direction expansion.
結果，晶圓11沿著分割預定劃線13完全分割成為各個元件晶片25之同時，在相鄰的元件晶片25之間形成間隔。使擴展帶T擴展之後，將電磁切換閥50切換為連通位置，對保持台46的吸附保持部46a作用吸附源52的負壓，將晶圓11以在晶片25間形成有間隔的狀態下進行保持。As a result, while the wafer 11 is completely divided into individual element wafers 25 along the predetermined division scribe line 13, a gap is formed between adjacent element wafers 25. After expanding the extension band T, the electromagnetic switching valve 50 is switched to the communication position, and the negative pressure of the adsorption source 52 is applied to the adsorption holding portion 46 a of the holding table 46 to perform the wafer 11 with a gap formed between the wafers 25. maintain.
分割步驟實施之後，在藉由保持台46吸附保持擴展帶T之狀態下對擴展帶T照射紫外線，降低擴展帶T的黏貼力之後，藉由拾起裝置將元件晶片25從擴展帶T拾起。After the dividing step is performed, the extension tape T is irradiated with ultraviolet rays while the extension tape T is adsorbed and held by the holding table 46 to reduce the adhesive force of the extension tape T, and then the component wafer 25 is picked up from the extension tape T by a pick-up device .
依據上述實施形態，在雷射加工後實施晶圓11的背面研削，因此通過研削負荷使晶圓11至少局部性分割成為各個晶片。因此，和不實施研削之情況下比較，即使藉由較低輸出的雷射加工亦可以分割成為晶片，因此和在雷射加工後不實施研削之情況下比較可以提升元件晶片的抗折強度。另外，屏蔽隧道的上端部分藉由研削被除去而不殘留於晶片，因此元件晶片的抗折強度可以提升。According to the above-mentioned embodiment, the back surface of the wafer 11 is ground after the laser processing. Therefore, the wafer 11 is divided at least locally into individual wafers by the grinding load. Therefore, compared with the case where grinding is not performed, the wafer can be divided into wafers even by laser processing with a lower output. Therefore, the flexural strength of the element wafer can be improved compared with the case where grinding is not performed after laser processing. In addition, since the upper end portion of the shield tunnel is removed by grinding without remaining on the wafer, the flexural strength of the element wafer can be improved.
11‧‧‧鈮酸鋰晶圓(LN晶圓)11‧‧‧lithium niobate wafer (LN wafer)
12‧‧‧聚光器12‧‧‧ Concentrator
12a‧‧‧聚光透鏡12a‧‧‧ condenser lens
13‧‧‧分割預定劃線13‧‧‧ divided scheduled line
15‧‧‧SAW元件15‧‧‧SAW components
16‧‧‧研削單元16‧‧‧grinding unit
17‧‧‧保護帶17‧‧‧ protective tape
19‧‧‧屏蔽隧道19‧‧‧shielded tunnel
21‧‧‧細孔21‧‧‧ pores
22‧‧‧研削輪22‧‧‧Grinding Wheel
23‧‧‧非晶質23‧‧‧Amorphous
25‧‧‧元件晶片25‧‧‧component chip
26‧‧‧研削磨石26‧‧‧grinding stone
30‧‧‧擴展裝置30‧‧‧Expansion device
34‧‧‧保持構件34‧‧‧ holding member
38‧‧‧擴展滾筒38‧‧‧Extended roller
[圖1] 表示在晶圓的表面黏貼保護帶的模樣之斜視圖。 [圖2] 表示保持步驟之剖面圖。 [圖3] 表示雷射加工步驟之剖面圖。 [圖4] 圖4(A)表示自晶圓的表面至中途為止形成有屏蔽隧道之實施形態的剖面圖，圖4(B)表示自晶圓的表面至背面為止形成有屏蔽隧道之實施形態的剖面圖。 [圖5] 表示研削步驟之一部分剖面側面圖。 [圖6] 表示轉印步驟之斜視圖。 [圖7] 表示在晶片間形成間隔的間隔形成步驟之剖面圖。[Fig. 1] A perspective view showing the appearance of a protective tape stuck on the surface of a wafer.图 [Fig. 2] A sectional view showing a holding step.图 [Fig. 3] A sectional view showing laser processing steps. [Fig. 4] Fig. 4 (A) is a cross-sectional view showing an embodiment in which a shield tunnel is formed from the surface to the middle of the wafer, and Fig. 4 (B) is an embodiment in which a shield tunnel is formed from the surface to the back of the wafer. Section view. [Fig. 5] A sectional side view showing a part of the grinding step.图 [Fig. 6] A perspective view showing a transfer step. [Fig. 7] A cross-sectional view showing a step of forming a space between the wafers.
Claims (3)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-122264 | 2017-06-22 | ||
| JP2017122264A JP6906845B2 (en) | 2017-06-22 | 2017-06-22 | Processing method of work piece |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201907456A true TW201907456A (en) | 2019-02-16 |
| TWI757482B TWI757482B (en) | 2022-03-11 |
Family
ID=64821896
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107115377A TWI757482B (en) | 2017-06-22 | 2018-05-07 | Processing method of workpiece |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6906845B2 (en) |
| KR (1) | KR102518004B1 (en) |
| CN (1) | CN109119336B (en) |
| TW (1) | TWI757482B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7218056B2 (en) * | 2019-02-20 | 2023-02-06 | 株式会社ディスコ | Method for manufacturing at least one of chip and frame |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001332949A (en) | 2000-05-19 | 2001-11-30 | Toshiba Corp | Method for manufacturing surface acoustic wave element |
| JP6151557B2 (en) | 2013-05-13 | 2017-06-21 | 株式会社ディスコ | Laser processing method |
| JP6097146B2 (en) * | 2013-05-16 | 2017-03-15 | 株式会社ディスコ | Processing method of optical device wafer |
| US8883614B1 (en) * | 2013-05-22 | 2014-11-11 | Applied Materials, Inc. | Wafer dicing with wide kerf by laser scribing and plasma etching hybrid approach |
| US9299614B2 (en) * | 2013-12-10 | 2016-03-29 | Applied Materials, Inc. | Method and carrier for dicing a wafer |
| JP6230422B2 (en) * | 2014-01-15 | 2017-11-15 | 株式会社ディスコ | Wafer processing method |
| JP6324796B2 (en) * | 2014-04-21 | 2018-05-16 | 株式会社ディスコ | Single crystal substrate processing method |
| JP6328485B2 (en) * | 2014-05-13 | 2018-05-23 | 株式会社ディスコ | Wafer processing method |
| JP2016171214A (en) * | 2015-03-12 | 2016-09-23 | 株式会社ディスコ | Processing method of single crystal substrate |
| JP6300763B2 (en) * | 2015-08-03 | 2018-03-28 | 株式会社ディスコ | Workpiece processing method |
| JP6625854B2 (en) * | 2015-10-06 | 2019-12-25 | 株式会社ディスコ | Optical device wafer processing method |
-
2017
- 2017-06-22 JP JP2017122264A patent/JP6906845B2/en active Active
-
2018
- 2018-05-07 TW TW107115377A patent/TWI757482B/en active
- 2018-06-07 CN CN201810578439.0A patent/CN109119336B/en active Active
- 2018-06-19 KR KR1020180070321A patent/KR102518004B1/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| JP6906845B2 (en) | 2021-07-21 |
| TWI757482B (en) | 2022-03-11 |
| CN109119336A (en) | 2019-01-01 |
| CN109119336B (en) | 2024-02-09 |
| KR102518004B1 (en) | 2023-04-04 |
| KR20190000308A (en) | 2019-01-02 |
| JP2019009218A (en) | 2019-01-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7410831B2 (en) | Method and device for dividing plate-like member | |
| CN107591361B (en) | Method for manufacturing semiconductor device chip | |
| KR102163442B1 (en) | Method of machining single crystal substrate | |
| JP2014033163A (en) | Wafer splitting method | |
| CN105575896B (en) | Method for processing wafer | |
| KR20150085474A (en) | Wafer processing method | |
| JP2018186153A (en) | Wafer production method | |
| KR102599910B1 (en) | Method for manufacturing small-diameter wafer | |
| JP6918420B2 (en) | Wafer processing method | |
| JP2018063987A (en) | Wafer processing method | |
| TW201709300A (en) | Processing method of single crystal substrate | |
| TW201715598A (en) | Optical device wafer processing method | |
| TW201707069A (en) | Method of processing single-crystal substrate | |
| TW201907456A (en) | Processing method of processed objects | |
| TW201707078A (en) | Saw device manufacturing method | |
| JP6970554B2 (en) | Processing method | |
| JP2021072353A (en) | Wafer processing method | |
| JP2017041604A (en) | Processing method for optical device wafer | |
| JP6576782B2 (en) | Wafer processing method | |
| JP2019061980A (en) | Chip manufacturing method | |
| JP2021158164A (en) | Device chip manufacturing method | |
| KR20190129736A (en) | Method for manufacturing chip | |
| CN114823505A (en) | Method for manufacturing chip | |
| KR20190129737A (en) | Method for manufacturing chip | |
| JP2018063986A (en) | Wafer processing method |