JP2018533210A - オプトエレクトロニクス部品、ディスプレイ用背景照明およびオプトエレクトロニクス部品の製造方法 - Google Patents
オプトエレクトロニクス部品、ディスプレイ用背景照明およびオプトエレクトロニクス部品の製造方法 Download PDFInfo
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- 230000005693 optoelectronics Effects 0.000 title claims abstract description 99
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000000034 method Methods 0.000 title description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 125
- 239000004065 semiconductor Substances 0.000 claims abstract description 102
- 230000005855 radiation Effects 0.000 claims abstract description 94
- 238000006243 chemical reaction Methods 0.000 claims abstract description 55
- 230000003595 spectral effect Effects 0.000 claims abstract description 34
- 229910010199 LiAl Inorganic materials 0.000 claims description 15
- 239000011159 matrix material Substances 0.000 claims description 13
- 238000000295 emission spectrum Methods 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 229910052712 strontium Inorganic materials 0.000 claims description 7
- 229910052727 yttrium Inorganic materials 0.000 claims description 7
- 229910052765 Lutetium Inorganic materials 0.000 claims description 6
- 229910052788 barium Inorganic materials 0.000 claims description 6
- 229910004283 SiO 4 Inorganic materials 0.000 claims description 5
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 238000004382 potting Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 47
- 239000000463 material Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 238000005286 illumination Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 8
- 229910052693 Europium Inorganic materials 0.000 description 7
- 239000012790 adhesive layer Substances 0.000 description 7
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- -1 nitride compound Chemical class 0.000 description 4
- 229910052684 Cerium Inorganic materials 0.000 description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical group [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 150000002602 lanthanoids Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- ZRPAUEVGEGEPFQ-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]pyrazol-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C=NN(C=1)CC(=O)N1CC2=C(CC1)NN=N2 ZRPAUEVGEGEPFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical group [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 230000002463 transducing effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77346—Aluminium Nitrides or Aluminium Oxynitrides
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77347—Silicon Nitrides or Silicon Oxynitrides
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7774—Aluminates
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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Abstract
Description
2 半導体チップ
3 接着層
4 変換要素
5 反射要素またはハウジング
6 コンタクトウェブ部
7 レンズ
8 保護ダイオード電極
9 第1の蛍光体
10 第2の蛍光体
G 全放射
12 凹部
21 さらなる半導体チップ
31 さらなる接着層
41 第1の層
42 第2の層
100 オプトエレクトロニクス部品
Claims (13)
- 青色スペクトル領域の一次放射を発生する半導体チップ(2)と、
前記半導体チップ(2)のビーム経路に配置されており、前記一次放射から二次放射を発生する変換要素(4)と、
を備えるオプトエレクトロニクス部品(100)であって、
前記変換要素(4)は、少なくとも1つの第1の蛍光体(9)および第2の蛍光体(10)を含み、
前記第1の蛍光体(9)は、Sr(Sr1−xCax)Si2Al2N6:Eu2+(0≦x≦1)および/または(Sr1−yCay)[LiAl3N4]:Eu2+(0≦y≦1)であり、
前記オプトエレクトロニクス部品(100)から出射される全放射(G)は、白色混合光である、
オプトエレクトロニクス部品(100)。 - 前記第1の蛍光体(9)は、色位置Cxが0.655〜0.685であり、かつ、色位置Cyが0.300〜0.350であるSr(Sr1−xCax)Si2Al2N6:Eu2+である、および/または、発光スペクトルの最大半値全幅が82nmであるSr(Sr1−xCax)Si2Al2N6:Eu2+である、
請求項1に記載のオプトエレクトロニクス部品(100)。 - 前記第1の蛍光体(9)は、色位置Cxが0.680〜0.715であり、かつ、色位置Cyが0.280〜0.320である(Sr1−yCay)[LiAl3N4]:Eu2+である、および/または、発光スペクトルの最大半値全幅が55nmである(Sr1−yCay)[LiAl3N4]:Eu2+である、
請求項1または2に記載のオプトエレクトロニクス部品(100)。 - 前記第1の蛍光体から出射された放射の主波長は、590nm〜640nmの範囲内である、
請求項1〜3のいずれか一項に記載のオプトエレクトロニクス部品(100)。 - 前記変換要素(4)は、(Ba,Sr)2SiO4、β−サイアロン、(Y,Lu)3(Al,Ga)5O12、およびBa−SiONからなる群から選択される第2の蛍光体(10)を有し、
前記第2の蛍光体(10)には、希土類元素がドープされ、
前記第2の蛍光体(10)は、ピーク波長のスペクトル領域が510nm〜590nmである放射を出射する、
請求項1〜4のいずれか一項に記載のオプトエレクトロニクス部品(100)。 - 前記第2の蛍光体(10)は、β−サイアロンである、
請求項5に記載のオプトエレクトロニクス部品(100)。 - 前記第1の蛍光体(9)および前記第2の蛍光体(10)は、マトリクス材料内に分散され、前記半導体チップ(2)の放射出射領域の下流に直接的に配置されている、
請求項1〜6のいずれか一項に記載のオプトエレクトロニクス部品(100)。 - 前記変換要素(4)は、少なくとも第1および第2の層(41,42)を備える層システムとして形成されており、
前記第1の層(41)は、前記第1の蛍光体(9)を含み、
前記第2の層(42)は、前記第2の蛍光体(10)を含み、
前記第1の層(41)は、前記半導体チップ(2)と前記第2の層(42)との間に配置されている、
請求項1〜7のいずれか一項に記載のオプトエレクトロニクス部品(100)。 - 前記変換要素(4)は、少なくとも第1および第2の層(41,42)を備える層システムとして形成されており、
前記第1の層(41)は、前記第1の蛍光体(9)を含み、
前記第2の層(42)は、前記第2の蛍光体(10)を含み、
前記第2の層(42)は、前記半導体チップ(2)と前記第1の層(41)との間に配置されている、
請求項1〜8のいずれか一項に記載のオプトエレクトロニクス部品(100)。 - 青色スペクトル領域の一次放射を発生する半導体チップ(21)を有し、
前記半導体チップ(2,21)は、共通の凹部(12)に配置されており、
前記変換要素(4)は、ポッティングとして形成されており、前記半導体チップ(2,21)を密着状に包囲する、
請求項1〜9のいずれか一項に記載のオプトエレクトロニクス部品(100)。 - 前記青色スペクトル領域の最大ピーク波長は、380nm〜480nmである、
請求項1〜10のいずれか一項に記載のオプトエレクトロニクス部品(100)。 - 請求項1〜11のいずれか一項に記載のオプトエレクトロニクス部品(100)を少なくとも1つ備える、
ディスプレイ用背景照明。 - 請求項1〜11のいずれか一項に記載のオプトエレクトロニクス部品の製造方法であって、
A)青色スペクトル領域の一次放射を発生する半導体チップ(2)を設けるステップと、
B)前記半導体チップ(2)のビーム経路に配置され、前記一次放射から二次放射を発生する変換要素(4)を設けるステップと、
を含み、
前記変換要素(4)は、少なくとも1つの第1および第2の蛍光体(9,10)を有し、
前記第1の蛍光体(9)は、Sr(Sr1−xCax)Si2Al2N6:Eu2+(0≦x≦1)および/または(Sr1−yCay)[LiAl3N4]:Eu2+(0≦y≦1)であり、
前記オプトエレクトロニクス部品(100)は、少なくとも動作時に白色混合光を出射する、
オプトエレクトロニクス部品の製造方法。
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