JP2018532271A5 - - Google Patents
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- Publication number
- JP2018532271A5 JP2018532271A5 JP2018519330A JP2018519330A JP2018532271A5 JP 2018532271 A5 JP2018532271 A5 JP 2018532271A5 JP 2018519330 A JP2018519330 A JP 2018519330A JP 2018519330 A JP2018519330 A JP 2018519330A JP 2018532271 A5 JP2018532271 A5 JP 2018532271A5
- Authority
- JP
- Japan
- Prior art keywords
- metal
- dielectric layer
- cobalt
- gas
- ruthenium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 229910052751 metal Inorganic materials 0.000 claims 32
- 239000002184 metal Substances 0.000 claims 32
- 238000000034 method Methods 0.000 claims 23
- 239000007789 gas Substances 0.000 claims 12
- 229910017052 cobalt Inorganic materials 0.000 claims 10
- 239000010941 cobalt Substances 0.000 claims 10
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 10
- -1 alkoxy silane Chemical compound 0.000 claims 8
- 238000000151 deposition Methods 0.000 claims 7
- 230000008021 deposition Effects 0.000 claims 7
- 230000002209 hydrophobic effect Effects 0.000 claims 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 6
- 229910052707 ruthenium Inorganic materials 0.000 claims 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- 238000005229 chemical vapour deposition Methods 0.000 claims 4
- 239000010949 copper Substances 0.000 claims 4
- 229910000077 silane Inorganic materials 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 3
- 125000000524 functional group Chemical group 0.000 claims 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 3
- 239000002243 precursor Substances 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 238000005019 vapor deposition process Methods 0.000 claims 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- BZORFPDSXLZWJF-UHFFFAOYSA-N N,N-dimethyl-1,4-phenylenediamine Chemical compound CN(C)C1=CC=C(N)C=C1 BZORFPDSXLZWJF-UHFFFAOYSA-N 0.000 claims 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 2
- 239000007983 Tris buffer Substances 0.000 claims 2
- 238000000231 atomic layer deposition Methods 0.000 claims 2
- 239000012159 carrier gas Substances 0.000 claims 2
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 claims 2
- JUPWRUDTZGBNEX-UHFFFAOYSA-N cobalt;pentane-2,4-dione Chemical compound [Co].CC(=O)CC(C)=O.CC(=O)CC(C)=O.CC(=O)CC(C)=O JUPWRUDTZGBNEX-UHFFFAOYSA-N 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 230000005661 hydrophobic surface Effects 0.000 claims 2
- 239000010948 rhodium Substances 0.000 claims 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- WYILUGVDWAFRSG-UHFFFAOYSA-N 2,4-dimethylpenta-1,3-diene;ruthenium(2+) Chemical compound [Ru+2].CC(C)=CC(C)=[CH-].CC(C)=CC(C)=[CH-] WYILUGVDWAFRSG-UHFFFAOYSA-N 0.000 claims 1
- QJRXYAQPTRTMEE-UHFFFAOYSA-N CC(=C[Ru]C1(C=CC=C1)C)C=C(C)C Chemical compound CC(=C[Ru]C1(C=CC=C1)C)C=C(C)C QJRXYAQPTRTMEE-UHFFFAOYSA-N 0.000 claims 1
- XOSBQSGUNCVAIL-UHFFFAOYSA-N CC(=C[Ru]C1(C=CC=C1)CC)C=C(C)C Chemical compound CC(=C[Ru]C1(C=CC=C1)CC)C=C(C)C XOSBQSGUNCVAIL-UHFFFAOYSA-N 0.000 claims 1
- GVFULKMBHQGILM-UHFFFAOYSA-N CNC.C[SiH2]C Chemical compound CNC.C[SiH2]C GVFULKMBHQGILM-UHFFFAOYSA-N 0.000 claims 1
- ZSZWFVOEVIAHPL-UHFFFAOYSA-N N-methylmethanamine trimethylsilane Chemical compound CNC.C[SiH](C)C ZSZWFVOEVIAHPL-UHFFFAOYSA-N 0.000 claims 1
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 claims 1
- 150000001343 alkyl silanes Chemical class 0.000 claims 1
- 125000005376 alkyl siloxane group Chemical group 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- BKFAZDGHFACXKY-UHFFFAOYSA-N cobalt(II) bis(acetylacetonate) Chemical compound [Co+2].CC(=O)[CH-]C(C)=O.CC(=O)[CH-]C(C)=O BKFAZDGHFACXKY-UHFFFAOYSA-N 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- QULMGWCCKILBTO-UHFFFAOYSA-N n-[dimethylamino(dimethyl)silyl]-n-methylmethanamine Chemical compound CN(C)[Si](C)(C)N(C)C QULMGWCCKILBTO-UHFFFAOYSA-N 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 239000012495 reaction gas Substances 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 1
- FTCHSXVKVGGWCW-UHFFFAOYSA-N trimethyl(1h-pyrrol-2-yl)silane Chemical compound C[Si](C)(C)C1=CC=CN1 FTCHSXVKVGGWCW-UHFFFAOYSA-N 0.000 claims 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 claims 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562242167P | 2015-10-15 | 2015-10-15 | |
| US62/242,167 | 2015-10-15 | ||
| PCT/US2016/057181 WO2017066671A1 (en) | 2015-10-15 | 2016-10-14 | Selective bottom-up metal feature filling for interconnects |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2018532271A JP2018532271A (ja) | 2018-11-01 |
| JP2018532271A5 true JP2018532271A5 (https=) | 2019-08-15 |
Family
ID=58518024
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018519330A Pending JP2018532271A (ja) | 2015-10-15 | 2016-10-14 | インターコネクトのための選択的なボトムアップ式金属フィーチャ充填 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10014213B2 (https=) |
| JP (1) | JP2018532271A (https=) |
| KR (1) | KR102740084B1 (https=) |
| WO (1) | WO2017066671A1 (https=) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10580644B2 (en) | 2016-07-11 | 2020-03-03 | Tokyo Electron Limited | Method and apparatus for selective film deposition using a cyclic treatment |
| US11404313B2 (en) | 2017-04-26 | 2022-08-02 | Applied Materials, Inc. | Selective tungsten deposition at low temperatures |
| US10256144B2 (en) | 2017-04-26 | 2019-04-09 | Applied Materials, Inc. | Process integration approach of selective tungsten via fill |
| JP7348441B2 (ja) * | 2018-04-03 | 2023-09-21 | 東京エレクトロン株式会社 | 完全自己整合方式を使用するサブトラクティブ相互接続形成 |
| KR102640002B1 (ko) * | 2018-07-17 | 2024-02-27 | 가부시키가이샤 코쿠사이 엘렉트릭 | 반도체 장치의 제조 방법, 기판 처리 장치, 기록매체, 및 프로그램 |
| JP2020043139A (ja) * | 2018-09-06 | 2020-03-19 | 東京エレクトロン株式会社 | 埋め込み方法及び処理システム |
| JP7182970B2 (ja) * | 2018-09-20 | 2022-12-05 | 東京エレクトロン株式会社 | 埋め込み方法及び処理システム |
| US11387112B2 (en) * | 2018-10-04 | 2022-07-12 | Tokyo Electron Limited | Surface processing method and processing system |
| KR102759932B1 (ko) * | 2018-10-10 | 2025-01-23 | 도쿄엘렉트론가부시키가이샤 | 반도체 소자의 함입형 형상부를 저-저항률 금속으로 충전하기 위한 방법 |
| US20200251340A1 (en) * | 2019-02-04 | 2020-08-06 | Applied Materials, Inc. | Methods and apparatus for filling a feature disposed in a substrate |
| US11282745B2 (en) * | 2019-04-28 | 2022-03-22 | Applied Materials, Inc. | Methods for filling features with ruthenium |
| US11164780B2 (en) | 2019-06-07 | 2021-11-02 | Applied Materials, Inc. | Process integration approach for selective metal via fill |
| US20220316059A1 (en) * | 2019-07-25 | 2022-10-06 | Tokyo Electron Limited | Substrate processing method and substrate processing apparatus |
| US11094588B2 (en) | 2019-09-05 | 2021-08-17 | Applied Materials, Inc. | Interconnection structure of selective deposition process |
| WO2022243274A1 (en) | 2021-05-19 | 2022-11-24 | Merck Patent Gmbh | Selective deposition of ruthenium film by utilizing ru(i) precursors |
| TWI844913B (zh) | 2022-08-11 | 2024-06-11 | 力晶積成電子製造股份有限公司 | 內連線結構 |
| US20260011548A1 (en) * | 2024-07-02 | 2026-01-08 | Applied Materials, Inc. | Reduced underlayer oxidation during gap fill |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2721023B2 (ja) * | 1989-09-26 | 1998-03-04 | キヤノン株式会社 | 堆積膜形成法 |
| JP3072807B2 (ja) * | 1992-07-15 | 2000-08-07 | 日本電信電話株式会社 | 半導体装置の製造方法 |
| JPH10214896A (ja) * | 1996-11-29 | 1998-08-11 | Toshiba Corp | 半導体装置の製造方法及び製造装置 |
| JP2001085378A (ja) * | 1999-09-13 | 2001-03-30 | Sony Corp | 半導体装置およびその製造方法 |
| US7998864B2 (en) * | 2008-01-29 | 2011-08-16 | International Business Machines Corporation | Noble metal cap for interconnect structures |
| US7830010B2 (en) | 2008-04-03 | 2010-11-09 | International Business Machines Corporation | Surface treatment for selective metal cap applications |
| US7670894B2 (en) | 2008-04-30 | 2010-03-02 | Intel Corporation | Selective high-k dielectric film deposition for semiconductor device |
| US8242019B2 (en) * | 2009-03-31 | 2012-08-14 | Tokyo Electron Limited | Selective deposition of metal-containing cap layers for semiconductor devices |
| GB2473200B (en) * | 2009-09-02 | 2014-03-05 | Pragmatic Printing Ltd | Structures comprising planar electronic devices |
| US8178439B2 (en) * | 2010-03-30 | 2012-05-15 | Tokyo Electron Limited | Surface cleaning and selective deposition of metal-containing cap layers for semiconductor devices |
| EP2674996A1 (en) * | 2012-06-15 | 2013-12-18 | Imec VZW | Method for growing nanostructures in recessed structures |
| US9236292B2 (en) * | 2013-12-18 | 2016-01-12 | Intel Corporation | Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD) |
| US9488615B2 (en) * | 2014-12-17 | 2016-11-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Biosensor with a sensing surface on an interlayer dielectric |
-
2016
- 2016-10-14 KR KR1020187013656A patent/KR102740084B1/ko active Active
- 2016-10-14 WO PCT/US2016/057181 patent/WO2017066671A1/en not_active Ceased
- 2016-10-14 JP JP2018519330A patent/JP2018532271A/ja active Pending
- 2016-10-14 US US15/293,902 patent/US10014213B2/en active Active
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