JP2018529224A - 方向性プラズマとユースポイントケミストリを用いる基板処理装置及び技術 - Google Patents
方向性プラズマとユースポイントケミストリを用いる基板処理装置及び技術 Download PDFInfo
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- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1471—Arrangements for directing or deflecting the discharge along a desired path for centering, aligning or positioning of ray or beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Abstract
Description
Claims (15)
- 基板を処理するための装置であって、
プラズマチャンバから前記基板の平面の垂線に対して非ゼロの入射角を成すイオンを含むプラズマビームを抽出し、前記プラズマビームを前記基板に向けるための抽出板、及び
前記プラズマチャンバの外部に配置されたガス出口システムを備え、前記ガス出口システムはガス源に結合され且つ前記ガス源から受け取った反応性ガスを前記基板に供給するように構成され、前記反応性ガスは前記プラズマチャンバ中を通過しない、ことを特徴とする装置。 - 前記ガス出口システムは前記反応性ガスを前記プラズマビームと平行に前記基板に供給するように構成されている、請求項1記載の装置。
- 前記抽出プレートは、第1の方向に沿う開口幅及び前記第1の方向と直角の第2の方向に沿う開口長を有する開口を有する抽出プレートを備え、前記開口幅は前記開口長より大きく、前記プラズマビームはリボンビームであり、且つ前記ガス出口システムは複数のガスオリフィスを備え、前記複数のガスオリフィスは前記第1の方向に沿う前記抽出開口の辺に沿って配置されている、請求項1記載の装置。
- 前記反応性ガスは非解離ガスを含む、請求項1記載の装置。
- 前記反応性ガスはメタノール、エタノール、アセトン、又は他の極性分子を含む、請求項1記載の装置。
- 前記反応性ガスは基板構造に吸収コーティングを形成する吸収種を含む、請求項1記載の装置。
- 前記ガス出口システムは第1組の出口及び第2組の出口を備え、前記ガス源は前記第1組の出口に結合され、前記装置は更に第2のガス源を備え、前記第2のガス源は前記第2組の出口に結合され且つ第2の反応性ガスを前記基板に供給するように構成されている、請求項1記載の装置。
- 基板を処理するシステムであって、
プラズマを収容するプラズマチャンバ、
前記プラズマチャンバから前記基板の平面の垂線に対して非ゼロの入射角を成すイオンを含むプラズマビームを抽出し、前記プラズマビームを前記基板に向けるための抽出板、及び
前記プラズマチャンバの外部に配置されたガス出口システムを備え、前記ガス出口システムはガス源に結合され且つ前記ガス源から受け取った反応性ガスを前記基板に供給し、前記反応性ガスは前記プラズマチャンバ中を通過しない、ことを特徴とするシステム。 - 前記抽出プレートは、第1の方向に沿う開口幅及び前記第1の方向と直角の第2の方向に沿う開口長を有する開口を有する抽出プレートを備え、前記開口幅は前記開口長より大きく、前記プラズマビームはリボンビームであり、前記システムは更に、前記基板を前記第2の方向に沿って走査させる基板ホルダを備える請求項8記載の装置。
- 前記ガス出口システムは複数のガスオリフィスを備え、前記複数のガスオリフィスは前記第1の方向に沿う前記抽出開口の辺に沿って配置されている、請求項9記載のシステム。
- 少なくとも1つのシステムパラメータを第1の値から第の値に変更する制御システムを更に備え、前記プラズマビームは前記第1の値で第1の形状を有し、第2の値で第2の形状を有し、前記少なくとも1つのシステムパラメータは、前記プラズマチャンバに供給されるRF電力のレベル、前記プラズマビームの抽出電圧、前記抽出プレートの形状、又は基板と抽出プレートの間の間隔を含む、請求項8記載のシステム。
- 前記反応性ガスは極性分子を含む、前記プラズマビームは不活性ガスイオンを含む、請求項8記載のシステム。
- 基板を処理する方法であって、
プラズマから基板の平面の垂線に対して非ゼロの入射角を成すイオンを含むプラズマビームを抽出するステップ、及び
ガス源からの反応性ガスを前記基板に向けるステップを含み、前記反応性ガスは前記プラズマチャンバ中を通過しない、ことを特徴とする方法。 - 前記反応性ガスを前記基板に向けるステップは、極性分子を含むガスを前記基板に供給し、前記反応性ガスに由来するコンフォーマルコーティングを前記金属層上に形成するステップを含み、前記イオンは前記基板上に配置した金属層から金属種をスパッタエッチする不活性ガスイオンであり、前記極性分子は前記金属種と揮発性エッチング生成物形成する、請求項13記載の方法。
- 前記基板は側壁を有する少なくとも1つの表面特徴部を備え、前記反応性ガス及びプラズマビームが前記金属層からの材料の前記側壁への再堆積なしに前記金属層をエッチングする、請求項14記載の方法。
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US14/808,612 | 2015-07-24 | ||
PCT/US2016/042261 WO2017019312A1 (en) | 2015-07-24 | 2016-07-14 | Apparatus and techniques to treat substrates using directional plasma and point of use chemistry |
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KR (1) | KR20180025973A (ja) |
CN (1) | CN107851576B (ja) |
TW (1) | TWI702651B (ja) |
WO (1) | WO2017019312A1 (ja) |
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JP2022512365A (ja) * | 2018-12-17 | 2022-02-03 | アプライド マテリアルズ インコーポレイテッド | 別個の共線形ラジカル及びイオンを提供する、走査された角度付きエッチング装置及び技術 |
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US10730082B2 (en) * | 2016-10-26 | 2020-08-04 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for differential in situ cleaning |
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US9706634B2 (en) * | 2015-08-07 | 2017-07-11 | Varian Semiconductor Equipment Associates, Inc | Apparatus and techniques to treat substrates using directional plasma and reactive gas |
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- 2015-07-24 US US14/808,612 patent/US10128082B2/en active Active
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US11967489B2 (en) | 2018-12-07 | 2024-04-23 | Applied Materials, Inc. | Apparatus and techniques for angled etching using multielectrode extraction source |
JP2022512365A (ja) * | 2018-12-17 | 2022-02-03 | アプライド マテリアルズ インコーポレイテッド | 別個の共線形ラジカル及びイオンを提供する、走査された角度付きエッチング装置及び技術 |
JP7236542B2 (ja) | 2018-12-17 | 2023-03-09 | アプライド マテリアルズ インコーポレイテッド | 別個の共線形ラジカル及びイオンを提供する、走査された角度付きエッチング装置及び技術 |
US11715621B2 (en) | 2018-12-17 | 2023-08-01 | Applied Materials, Inc. | Scanned angled etching apparatus and techniques providing separate co-linear radicals and ions |
Also Published As
Publication number | Publication date |
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US20170025252A1 (en) | 2017-01-26 |
US10128082B2 (en) | 2018-11-13 |
TWI702651B (zh) | 2020-08-21 |
KR20180025973A (ko) | 2018-03-09 |
US20190006149A1 (en) | 2019-01-03 |
JP6827462B2 (ja) | 2021-02-10 |
WO2017019312A1 (en) | 2017-02-02 |
TW201705277A (zh) | 2017-02-01 |
CN107851576A (zh) | 2018-03-27 |
US10600616B2 (en) | 2020-03-24 |
CN107851576B (zh) | 2021-07-06 |
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