KR20050062740A - 낮은 플라즈마 소스 파워를 사용하여 높은 식각 선택비를구현하는 플라즈마 식각 방법 - Google Patents
낮은 플라즈마 소스 파워를 사용하여 높은 식각 선택비를구현하는 플라즈마 식각 방법 Download PDFInfo
- Publication number
- KR20050062740A KR20050062740A KR1020030094413A KR20030094413A KR20050062740A KR 20050062740 A KR20050062740 A KR 20050062740A KR 1020030094413 A KR1020030094413 A KR 1020030094413A KR 20030094413 A KR20030094413 A KR 20030094413A KR 20050062740 A KR20050062740 A KR 20050062740A
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- South Korea
- Prior art keywords
- plasma
- source power
- coil
- wafer
- source
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 66
- 238000001020 plasma etching Methods 0.000 title claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 40
- 230000008569 process Effects 0.000 claims abstract description 39
- 239000007789 gas Substances 0.000 claims abstract description 14
- 239000012495 reaction gas Substances 0.000 claims abstract description 8
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 5
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 5
- 239000000376 reactant Substances 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 32
- 238000009616 inductively coupled plasma Methods 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (5)
- 내부에 웨이퍼가 장착되는 공정 챔버,상기 웨이퍼의 후면에 바이어스 파워(bias power)를 인가하는 바이어스 파워부,상기 공정 챔버에 도입되는 반응 가스를 플라즈마화하기 위해 상기 공정 챔버 상에 도입되고 코일 부싱(coil bushing), 및 상기 코일 부싱에서 분지되어 상기 코일 부싱 주위를 감싸게 감기는 둘 이상 다수 개의 단위 코일들을 포함하는 플라즈마 소스 코일 구조체, 및상기 플라즈마 소스 코일 구조체에 상기 플라즈마 발생을 위한 소스 파워를 인가하는 소스 파워부를 포함하는 플라즈마 챔버 장비의상기 공정 챔버에 웨이퍼를 장착하는 단계; 및상기 소스 파워를 500W 이하로 인가하며 상기 반응 가스를 상기 공정 챔버 내로 공급하여 상기 웨이퍼 상을 선택적으로 식각하는 단계를 포함하는 것을 특징으로 하는 플라즈마 식각 방법.
- 제1항에 있어서,상기 단위 코일들은 3개 이상의 다수이며 상기 감긴 회전수는 3 이하인 것을 사용하는 것을 특징으로 하는 플라즈마 식각 방법.
- 제1항에 있어서,상기 소스 파워는 대략 300W 내지 450W로 인가되는 것을 특징으로 하는 플라즈마 식각 방법.
- 제1항에 있어서,상기 소스 파워와 상기 바이어스 파워는 대략 0.2 내지 5의 비를 유지하도록 각각 인가되는 것을 특징으로 하는 플라즈마 식각 방법.
- 제1항에 있어서,상기 반응 가스는 염소 가스 및 삼염화보론 가스를 포함하여 공급되는 것을 특징으로 하는 플라즈마 식각 방법.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030094413A KR100557674B1 (ko) | 2003-12-22 | 2003-12-22 | 낮은 플라즈마 소스 파워를 사용하여 높은 식각 선택비를구현하는 플라즈마 식각 방법 |
EP04808519A EP1700335A1 (en) | 2003-12-22 | 2004-12-22 | Method for setting plasma chamber having an adaptive plasma source, plasma etching method using the same and manufacturing method for adaptive plasma source |
US10/583,976 US20070151947A1 (en) | 2003-12-22 | 2004-12-22 | Method for setting plasma chamber having an adaptive plasma source, plasma etching method using the same and manufacturing method for adaptive plasma source |
PCT/KR2004/003388 WO2005062361A1 (en) | 2003-12-22 | 2004-12-22 | Method for setting plasma chamber having an adaptive plasma source, plasma etching method using the same and manufacturing method for adaptive plasma source |
JP2006545243A JP2007514324A (ja) | 2003-12-22 | 2004-12-22 | 適応型プラズマ源を有するプラズマ室の設置方法、これを用いたプラズマエッチング法及び適応型プラズマ源の製造方法 |
CNA2004800385831A CN1898780A (zh) | 2003-12-22 | 2004-12-22 | 用于设置具有自适应等离子体源的等离子体室的方法、使用该等离子体室的等离子体蚀刻方法和用于自适应等离子体源的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030094413A KR100557674B1 (ko) | 2003-12-22 | 2003-12-22 | 낮은 플라즈마 소스 파워를 사용하여 높은 식각 선택비를구현하는 플라즈마 식각 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050062740A true KR20050062740A (ko) | 2005-06-27 |
KR100557674B1 KR100557674B1 (ko) | 2006-03-10 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020030094413A KR100557674B1 (ko) | 2003-12-22 | 2003-12-22 | 낮은 플라즈마 소스 파워를 사용하여 높은 식각 선택비를구현하는 플라즈마 식각 방법 |
Country Status (2)
Country | Link |
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KR (1) | KR100557674B1 (ko) |
CN (1) | CN1898780A (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102024669B (zh) * | 2009-09-09 | 2012-07-25 | 中芯国际集成电路制造(上海)有限公司 | 减小等离子体刻蚀中的反射功率的方法 |
CN104347336B (zh) * | 2013-07-24 | 2017-02-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 电感耦合线圈及等离子体加工设备 |
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2003
- 2003-12-22 KR KR1020030094413A patent/KR100557674B1/ko active IP Right Grant
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2004
- 2004-12-22 CN CNA2004800385831A patent/CN1898780A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
KR100557674B1 (ko) | 2006-03-10 |
CN1898780A (zh) | 2007-01-17 |
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