JP2018518054A - 光電素子および光電素子の製造方法 - Google Patents
光電素子および光電素子の製造方法 Download PDFInfo
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- JP2018518054A JP2018518054A JP2017562588A JP2017562588A JP2018518054A JP 2018518054 A JP2018518054 A JP 2018518054A JP 2017562588 A JP2017562588 A JP 2017562588A JP 2017562588 A JP2017562588 A JP 2017562588A JP 2018518054 A JP2018518054 A JP 2018518054A
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- metal surface
- protective layer
- photoelectric element
- metal
- photoelectric
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- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 91
- 239000002184 metal Substances 0.000 claims abstract description 91
- 239000011241 protective layer Substances 0.000 claims abstract description 59
- 239000000463 material Substances 0.000 claims abstract description 50
- 239000004065 semiconductor Substances 0.000 claims abstract description 44
- ADLVDYMTBOSDFE-UHFFFAOYSA-N 5-chloro-6-nitroisoindole-1,3-dione Chemical compound C1=C(Cl)C([N+](=O)[O-])=CC2=C1C(=O)NC2=O ADLVDYMTBOSDFE-UHFFFAOYSA-N 0.000 claims abstract description 39
- 230000001681 protective effect Effects 0.000 claims abstract description 23
- 230000005693 optoelectronics Effects 0.000 claims abstract description 18
- 230000005855 radiation Effects 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 29
- 238000005266 casting Methods 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 12
- 239000013545 self-assembled monolayer Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 239000002094 self assembled monolayer Substances 0.000 claims description 11
- 229920001296 polysiloxane Polymers 0.000 claims description 10
- 239000002356 single layer Substances 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- 125000001997 phenyl group Chemical class [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 239000011575 calcium Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 125000003545 alkoxy group Chemical group 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 150000001408 amides Chemical class 0.000 claims description 2
- 150000001412 amines Chemical class 0.000 claims description 2
- 229910052788 barium Inorganic materials 0.000 claims description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 2
- 150000002148 esters Chemical class 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 125000002577 pseudohalo group Chemical group 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims 1
- 125000003118 aryl group Chemical group 0.000 claims 1
- 125000001072 heteroaryl group Chemical group 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 230000007797 corrosion Effects 0.000 description 7
- 238000005260 corrosion Methods 0.000 description 7
- HZVOZRGWRWCICA-UHFFFAOYSA-N methanediyl Chemical compound [CH2] HZVOZRGWRWCICA-UHFFFAOYSA-N 0.000 description 6
- 229910052717 sulfur Inorganic materials 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 4
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 4
- -1 nitride compound Chemical class 0.000 description 4
- 239000011593 sulfur Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 239000008393 encapsulating agent Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 description 3
- 125000004434 sulfur atom Chemical group 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002118 epoxides Chemical class 0.000 description 2
- 125000000623 heterocyclic group Chemical group 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 150000003573 thiols Chemical class 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 150000002390 heteroarenes Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 125000002883 imidazolyl group Chemical group 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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- H01L33/52—Encapsulations
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- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
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- C07F5/062—Al linked exclusively to C
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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Abstract
Description
上記式中、R1、R1’、R2、R3、R4、R5、R6、R7、R8、R9、R10およびR11は、互いに独立して、水素、アルキル基、アルコキシ基、アミンを有する基、アミド、エステル、カーボネート、置換または非置換の芳香族、置換または非置換の複素芳香族、ハロゲン、擬ハロゲンおよびこれらの組み合わせから選択されている。ここで、各式中に示されている−Xは、それぞれ少なくとも1つの金属表面Xに対する共有結合を示す。
または
から選択されており、
上記式中、−Xは、金属表面(1)に対する共有結合である。
A)接触型光電子半導体チップを用意する工程、
B)少なくとも1つの金属表面を用意する工程、
C)保護層を少なくとも1つの金属表面上に施与する工程、ここで保護層は、保護材料として少なくとも1種の複素環式カルベンを含むか、またはこれから成り、ここで、少なくとも1種のN−複素環式カルベンと少なくとも1つの金属表面との間に共有結合が形成され、かつここで、少なくとも1種のN−複素環式カルベンが単分子膜として自己配向する。言い換えれば、N−複素環式カルベンが金属表面に結合することによって、N−複素環式カルベンは保護層内で配向する。殊に、N−複素環式カルベンは単分子膜として配向する。
D)接触型光電子半導体チップおよび保護層で被覆された金属表面に流し込む工程、
が行われる。それにより、保護層は、光電素子の構成要素になり、光電素子内に残る。
Claims (13)
- 少なくとも1つの金属表面(1)を有する光電素子(100)であって、
−放射線を放出するために備えられている接触型光電子半導体チップ(2)、
−少なくとも1つの前記金属表面(1)上に配置されている保護層(5)、ここで前記保護層(5)は、少なくとも1種のN−複素環式カルベン(14)からの保護材料(3)を含み、ここで前記保護材料(3)と少なくとも1つの前記金属表面(1)との間には、共有結合(4)が形成されている、
を含む、前記光電素子(100)。 - 前記保護層(5)が、自己組織化単分子膜として形作られており、1nm以下の層厚を有する、請求項1記載の光電素子(100)。
- 前記金属表面(1)が、第一の金属接続接触部、第二の金属接続接触部、リードフレーム(6)、ボンドパッド(12)およびボンドワイヤ(11)の表面を含む群から選択されており、かつここで前記金属表面(1)が、銀、アルミニウム、カドミウム、バリウム、インジウム、マグネシウム、カルシウム、リチウムまたは金から選択されている少なくとも1種の金属または合金を含む、請求項1から4までのいずれか1項記載の光電素子(100)。
- 前記光電素子(100)の全ての前記金属表面(1)が、前記保護層(5)で形状結合により覆われている、請求項1から5までのいずれか1項記載の光電素子(100)。
- 前記接触型光電子半導体チップ(2)が、凹部(9)を有するケーシング(8)内に配置されており、ここで前記光電素子(100)の前記金属表面(1)が、少なくとも前記ボンドパッド(12)、前記ボンドワイヤ(11)および前記リードフレーム(6)の前記金属表面を含み、ここで前記保護層(5)が、前記凹部(9)内にある前記光電素子(2)の前記金属表面(1)を形状結合により覆っており、ここで前記凹部に、シリコーンを含む注型材(10)が流し込まれている、請求項1から6までのいずれか1項記載の光電素子(100)。
- 前記保護層(5)が、腐食性ガスに対して気密である、請求項1から7までのいずれか1項記載の光電素子(100)。
- 請求項1から8までのいずれか1項記載の、少なくとも1つの前記金属表面(1)を有する前記光電素子(100)の製造方法であって、以下の工程:
A)前記接触型光電子半導体チップ(2)を用意する工程、
B)少なくとも1つの前記金属表面(1)を用意する工程、
C)前記保護層(5)を少なくとも1つの前記金属表面(1)上に施与する工程、ここで前記保護層(5)が、前記保護材料(3)として少なくとも1種のN−複素環式カルベン(14)を含み、ここで、少なくとも1種のN−複素環式カルベン(14)と少なくとも1つの前記金属表面(1)との間に共有結合(4)が形成され、かつ少なくとも1種のN−複素環式カルベン(14)が単分子膜として自己配向する、
を有する、前記製造方法。 - 工程C)が気相蒸着により行われる、請求項9記載の製造方法。
- 前記工程C)が湿式化学法により行われる、請求項9または10記載の製造方法。
- 前記工程C)後に、さらなる工程D):
D)前記接触型光電子半導体チップ(2)および前記保護層(5)で被覆された前記金属表面(1)に流し込む工程、
が行われる、請求項9から11までのいずれか1項記載の製造方法。 - 前記工程D)が、シリコーンからの注型材(10)を用いて行われる、請求項12記載の製造方法。
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PCT/EP2016/061806 WO2016193098A1 (de) | 2015-06-02 | 2016-05-25 | Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements |
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US11239397B2 (en) * | 2019-12-11 | 2022-02-01 | Mikro Mesa Technology Co., Ltd. | Breathable and waterproof micro light emitting diode display |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008030926A1 (de) * | 2007-07-07 | 2009-01-29 | Universität Regensburg | Übergangsmetallkomplexe und deren Verwendung als Elektrochromophore |
WO2009028156A1 (ja) * | 2007-08-29 | 2009-03-05 | Panasonic Corporation | 配線部材、樹脂付金属部品及び樹脂封止半導体装置、並びにこれらの製造方法 |
US20140275555A1 (en) * | 2013-03-13 | 2014-09-18 | Massachusetts Institute Of Technology | Articles and methods comprising persistent carbenes and related compositions |
WO2015024120A1 (en) * | 2013-08-19 | 2015-02-26 | Queen's University At Kingston | Carbene functionalized composite materials |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61287155A (ja) * | 1985-06-14 | 1986-12-17 | Hitachi Ltd | 半導体装置及び半導体装置の製造方法 |
DE102005061828B4 (de) | 2005-06-23 | 2017-05-24 | Osram Opto Semiconductors Gmbh | Wellenlängenkonvertierendes Konvertermaterial, lichtabstrahlendes optisches Bauelement und Verfahren zu dessen Herstellung |
DE102005047856B4 (de) * | 2005-10-05 | 2007-09-06 | Infineon Technologies Ag | Halbleiterbauteil mit in Kunststoffgehäusemasse eingebetteten Halbleiterbauteilkomponenten, Systemträger zur Aufnahme der Halbleiterbauteilkomponenten und Verfahren zur Herstellung des Systemträgers und von Halbleiterbauteilen |
CN102150263A (zh) * | 2008-11-06 | 2011-08-10 | 松下电器产业株式会社 | 引线、布线部件、封装部件、带有树脂的金属部件和树脂封装半导体装置以及它们的制造方法 |
DE102009023350A1 (de) | 2009-05-29 | 2010-12-02 | Osram Opto Semiconductors Gmbh | Elektronisches Bauelement und Verfahren zur Herstellung eines elektronischen Bauelements |
DE102009058796A1 (de) | 2009-12-18 | 2011-06-22 | OSRAM Opto Semiconductors GmbH, 93055 | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
DE102011016935A1 (de) | 2011-04-13 | 2012-10-18 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauelements und Licht emittierendes Halbleiterbauelement |
DE102011113428A1 (de) | 2011-09-14 | 2013-03-14 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
CN102516314A (zh) * | 2011-12-08 | 2012-06-27 | 浙江中宙光电股份有限公司 | 一种氮杂环卡宾铂络合物催化剂及其制备与应用 |
US20130277816A1 (en) * | 2012-04-18 | 2013-10-24 | Texas Instruments Incorporated | Plastic-packaged semiconductor device having wires with polymerized insulator skin |
FI20135967L (fi) * | 2013-09-27 | 2015-03-28 | Lumichip Oy | Asennustason monitoiminen kapselointikerros ja menetelmä sen valmistamiseksi |
-
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008030926A1 (de) * | 2007-07-07 | 2009-01-29 | Universität Regensburg | Übergangsmetallkomplexe und deren Verwendung als Elektrochromophore |
WO2009028156A1 (ja) * | 2007-08-29 | 2009-03-05 | Panasonic Corporation | 配線部材、樹脂付金属部品及び樹脂封止半導体装置、並びにこれらの製造方法 |
US20140275555A1 (en) * | 2013-03-13 | 2014-09-18 | Massachusetts Institute Of Technology | Articles and methods comprising persistent carbenes and related compositions |
WO2015024120A1 (en) * | 2013-08-19 | 2015-02-26 | Queen's University At Kingston | Carbene functionalized composite materials |
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