CN107683533A - 光电子器件和用于制造光电子器件的方法 - Google Patents
光电子器件和用于制造光电子器件的方法 Download PDFInfo
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- CN107683533A CN107683533A CN201680032202.1A CN201680032202A CN107683533A CN 107683533 A CN107683533 A CN 107683533A CN 201680032202 A CN201680032202 A CN 201680032202A CN 107683533 A CN107683533 A CN 107683533A
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- 239000011241 protective layer Substances 0.000 claims abstract description 63
- 125000000623 heterocyclic group Chemical group 0.000 claims abstract description 41
- 239000000463 material Substances 0.000 claims abstract description 38
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- 239000010410 layer Substances 0.000 claims description 33
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- 229920001296 polysiloxane Polymers 0.000 claims description 12
- 239000013545 self-assembled monolayer Substances 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 6
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
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- 238000005260 corrosion Methods 0.000 claims description 5
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- 239000000126 substance Substances 0.000 claims description 5
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- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
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- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 3
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- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 2
- 239000004215 Carbon black (E152) Substances 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 2
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- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 2
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- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 2
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- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- AUHZEENZYGFFBQ-UHFFFAOYSA-N 1,3,5-trimethylbenzene Chemical group CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- UNEATYXSUBPPKP-UHFFFAOYSA-N 1,3-Diisopropylbenzene Chemical class CC(C)C1=CC=CC(C(C)C)=C1 UNEATYXSUBPPKP-UHFFFAOYSA-N 0.000 description 1
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- 229910052785 arsenic Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
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Classifications
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials Engineering (AREA)
- Led Device Packages (AREA)
- Photovoltaic Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
本发明涉及一种具有至少一个金属表面(1)的光电子器件(100),所述光电子器件包括:被接触的光电子半导体芯片(2),所述光电子半导体芯片设计用于发射辐射;保护层(5),所述保护层设置在至少一个金属表面(1)上,其中保护层(5)包括由至少一个N杂环卡宾(14)构成的保护材料(3),其中在保护材料(3)和至少一个金属表面(1)之间构成共价键(4)。
Description
技术领域
本发明涉及一种光电子器件。此外,本发明涉及一种用于制造光电子器件的方法。
背景技术
光电子器件的金属表面通常由于强腐蚀作用的气体而显示出腐蚀,所述强腐蚀作用的气体能够进入到光电子器件中进而与金属表面接触。这能够导致不期望的组件失效。
发明内容
本发明的目的是:提供一种稳定的光电子器件。另一目的是:提供一种长寿命的光电子器件。
所述目的通过根据独立权利要求1所述的光电子器件来实现。本发明的有利的设计方案和改进形式是从属权利要求的主题。此外,所述目的通过根据权利要求9所述的用于制造光电子器件的方法来实现。方法的有利的设计方案和改进形式是从属权利要求10至13的主题。
在至少一个实施方式中,光电子器件具有至少一个金属表面。光电子器件包括被接触的光电子半导体芯片。被接触的光电子半导体芯片设计用于发射辐射。光电子器件包括保护层。保护层设置在至少一个金属表面上。保护层包括由至少一个N杂环卡宾构成的保护材料。在保护材料和至少一个金属表面之间构成共价键。
也能够考虑的是:将低成本的基于硫醇的自组装单层(SAM,self-assemblymonolayers)用作为保护材料,来代替将N杂环卡宾用作为保护材料。在使用基于硫醇的SAM的情况下,当然必须考虑显著降低的耐热性和化学品抗性。
根据至少一个实施方式,光电子器件为发光二极管,简称LED。光电子器件尤其具有被接触的光电子半导体芯片。半导体芯片于是优选设计用于:发射蓝光或白光。
在此处需要指出的是:在此将术语“光电子器件”不仅理解为制成的器件,例如发光二极管(LED)或激光二极管,而且也理解为衬底和/或半导体层,使得例如铜层和半导体层的复合结构已经为一个器件并且能够形成上级的第二器件的组成部分,在所述第二器件中例如附加地存在电端子。
根据至少一个实施方式,光电子器件具有被接触的光电子半导体芯片。半导体芯片包括半导体层序列。半导体芯片的半导体层序列优选基于III-V族化合物半导体材料。半导体材料优选是氮化物化合物半导体材料如AlnIn1-n-mGamN或也是磷化物化合物半导体材料如AlnIn1-n-mGamP,其中分别有0≤n≤1,0≤m≤1并且n+m≤1。同样地,半导体材料能够是AlxGa1-xAs,其中0≤x≤1。在此,半导体层序列能够具有掺杂物以及附加的组成部分。然而,为了简单性仅说明半导体层序列的晶格的主要组成部分,即Al、As、Ga、In、N或P,即使当这些主要组成部分能够部分地由少量的其他物质替代和/或补充时也如此。
半导体层序列包含具有至少一个pn结和/或具有一个或多个量子阱结构的有源层。在半导体芯片运行时,在有源层中产生电磁辐射。辐射的波长或波长最大值优选处于紫外和/或可见光谱范围中,尤其处于420nm和680nm之间、例如440nm和480nm之间的波长处,其中包括边界值。
光电子半导体芯片被接触。借此在此和在下文中表示:光电子半导体芯片具有至少两个连接部位、尤其p连接接触部和n连接接触部,所述连接部位电接触半导体层序列。换言之,光电子器件具有可运行的半导体芯片。半导体芯片设计用于发射辐射。特别地,半导体层序列的有源区域设计用于发射辐射。
根据至少一个实施方式,光电子器件具有至少一个金属表面。特别地,光电子器件能够具有多个金属表面。将由金属或至少一种合金构成的如下表面理解成金属表面:所述表面能够与保护材料构成共价键。
根据至少一个实施方式,金属表面选自:第一金属连接接触部的表面,第二金属连接接触部的表面,导体框的表面,焊盘的表面和焊线的表面。特别地,金属表面包括至少一种金属或合金,所述金属或合金选自:银、铝、镉、钡、铟、镁、钙、锂、金或它们的组合。特别地,金属表面能够具有例如如下合金或由其构成:Ag:Mg、Ag:Ca、Mg:Al。
根据至少一个实施方式,光电子器件具有保护层。在此,保护层至少设置在一个金属表面或多个金属表面上。一个层或一个元件设置或施加在另一层或另一元件“上”或“上方”在此和在下文中能够表示:一个层或者一个元件直接地以直接机械和/或电接触的方式设置在另一层或另一元件上。此外也能够表示:一个层或者一个元件间接地设置在另一层或另一元件上或上方。在此于是能够在一个层和另一层之间或在一个元件和另一元件之间设置有另外的层和/或元件。
根据至少一个实施方式,保护层形状配合地覆盖金属表面。“形状配合地”在此表示:保护层匹配于金属表面的造型或形状。在此,尤其在金属表面和保护层之间存在直接机械接触。如果例如金属表面是焊线,那么保护层全方位地包覆线。因此能够防止:腐蚀性气体到达焊线并且腐蚀所述焊线。因此能够延长器件的使用寿命。
根据至少一个实施方式,保护层具有由至少一个N杂环卡宾构成的保护材料。特别地,保护层由用至少一个N杂环卡宾构成的保护材料构成。替选地,代替一种N杂环卡宾,在光电子器件的保护层中也能够存在多个N杂环卡宾的混合物作为保护材料。
根据至少一个实施方式,保护材料由N杂环卡宾构成。特别地,N杂环卡宾选自:
其中R1、R1’、R2、R3、R4、R5、R6、R7、R8、R9、R10和R11彼此独立地选自:氢,烷基,烷氧基,具有胺的基团,酰胺,酯,碳酸酯,取代的或未取代的芳烃,取代的或未取代的杂芳烃,卤素,,拟卤素,和其组合。在各个式中示出的-X在此分别显示出与至少一个金属表面X的共价键。
根据至少一个实施方式,保护材料选自:
其中R1和R2分别是烷基取代的苯,或者
其中R1、R2和R9分别是苯,并且
其中-X是与金属表面的共价键。
根据至少一个实施方式,保护材料是
其中R1和R2分别是2,4,6-三甲基苯或1,3-二异丙基苯。
特别地,保护层具有如下N杂环卡宾或保护层由如下N杂环卡宾构成:1,3-二异丙基-2H-苯并咪唑-2-亚甲基。
根据至少一个实施方式,保护层成形为自组装单子层或单层(self-assemblymonolayers,简称SAM)。特别地,单层具有小于或等于10nm、尤其小于或等于5nm、尤其小于或等于1nm、例如0.4nm的层厚度。用单子层或单层在此表示金属表面上的原子或分子的层,其中层厚度仅为一个原子或一个分子。
根据至少一个实施方式,保护材料没有硫。借此表示:N杂环卡宾不具有硫原子。由此N杂环卡宾不经由硫原子共价连接到金属表面上。
根据至少一个实施方式,保护材料具有一个或多个包括硫的侧链。N杂环卡宾经由卡宾的碳原子共价连接到金属表面上。换言之,N杂环卡宾不经由一个或多个侧链的硫原子共价连接到金属表面上。特别地,N杂环卡宾经由碳、尤其经由碳原子共价连接到金属表面上。换言之,在N杂环卡宾的碳和金属表面的金属之间构成共价键。特别地,共价连接经由五环卡宾(Carben im Fünfring)的碳原子进行,所述碳原子设置在相邻的氮原子之间。特别地,共价连接经由双键卡宾碳的未连接的电子对进行,所述卡宾碳位于两个相邻的氮原子之间的邻近环境中。反应性卡宾能够通过相邻的氮原子稳定(叶立德形式),所述氮原子起施主取代物的作用。
与N杂环卡宾相比,卡宾是具有电子螯合作用(Elektronensextett)的二价碳的不稳定的、高活性的化合物。N杂环卡宾与其他卡宾相比提高的稳定性主要通过相邻的电子负性取代物的-I效应以及其经由自由电子对给予卡宾碳的未占据的p轨道的施主功能来实现。N杂环卡宾尤其是Arduengo类型的。除了氮之外,硫或氧或磷也能够稳定卡宾。具有咪唑骨架的N杂环卡宾附加地通过借助于内消旋效应构成的π体系稳定。借此,尤其能够提供保护层,所述保护层是稳定的并且还保护光电子器件免受可能的环境影响,例如腐蚀。
根据至少一个实施方式,保护层相对于腐蚀性气体是防扩散的。用“防扩散的”在此和在下文中表示:保护层具有对于气体、尤其对于腐蚀作用的气体、例如硫化氢具有小的扩散系数。由于保护层的小的扩散系数,例如虽然能够从存在于器件中的囊封件逸出硫化氢,所述硫化氢当然不扩散穿过保护层进而不导致光电子器件的金属表面的腐蚀,,其中所述囊封件具有借助硫来硫化的橡胶材料。因此,能够提高光电子器件的使用寿命和稳定性并且避免不期望的组件失效。
根据至少一个实施方式,光电子器件的全部金属表面都借助保护层形状配合地覆盖。“形状配合地覆盖”在此表示:保护层包覆金属表面或者后续设置在其上,但是不损害其功能。这例如表示:尽管存在保护层,光电子器件能够发射辐射并且电流能够流动。“全部金属表面”在此尤其表示连接部位的金属表面,引线框的、焊线的和/或焊盘的金属表面。
根据至少一个实施方式,被接触的光电子半导体芯片设置在壳体中。壳体具有凹部,在所述凹部中设置有被接触的光电子半导体芯片。光电子器件具有金属表面,所述金属表面尤其至少是或者包括焊盘的、焊线的和/或导体框的金属表面。保护层于是施加在焊盘的、焊线的和/或导体框的金属表面上。特别地,保护层形状配合地覆盖光电子器件在凹部之内的金属表面。替选地或附加地,凹部能够借助囊封件囊封。硅树脂、尤其基于硅树脂的材料、例如甲基取代的硅树脂、苯基取代的硅树脂或甲基苯基取代的硅树脂适合作为囊封件。
硅树脂材料作为囊封件显示出的优点是:所述硅树脂材料是热稳定的并且具有高的光学透明度。当然,硅树脂材料与环氧化物材料相比对于气体、尤其对于腐蚀作用的气体具有一定的可穿透性。这主要在光电子组件运行时在如下情况下起作用:在系统温度升高时从其他存在的材料中排出侵蚀性物质。
现在,本发明已经认识到:通过在光电子器件的金属表面上应用保护层,能够防止由于腐蚀作用的气体扩散穿过硅树脂封装件产生的影响、尤其腐蚀。借助于尤其具有至少一个N杂环卡宾的保护层,尤其由N杂环卡宾构成的SAM的保护层,能够防止金属表面的腐蚀,进而主动地预防加速的器件老化。这引起器件的长期稳定性。
特别地,保护层是持久地保留在器件中的层。因此重要的是:在金属表面上构成的保护层、尤其SAM是稳定体系。该稳定体系能够通过在保护层和金属表面之间的共价构成来产生。
通过使用由N杂环卡宾构成的保护层,能够整体上提高组件稳定性。此外,由此例如能够在存在湿气的区域中使用光电子器件。能够提高光电子器件的使用寿命。例如为了降低层厚度不必再使用昂贵的贵金属、例如金。这节约成本。通过防扩散的保护层,封装件的或囊封件的扩散系数或其组成不再关键,使得每个封装件或每个任意的囊封件能够与其扩散系数无关地使用。此外,通过使用保护层,能够防止光电子器件由于腐蚀性材料失效。另一方面,也能够使用气体可穿透的囊封材料,所述囊封材料在金属表面未覆层的情况下由于腐蚀不能应用。因此,例如能够将环氧化物用作为囊封件。
本发明还涉及一种用于制造光电子器件的方法。优选地,该方法制造所述光电子器件。在此,光电气器件的相同的定义和实施方案也适用于用于制造光电子器件的方法并且反之亦然。
根据至少一个实施方式,该方法包括如下方法步骤:
A)提供被接触的光电子半导体芯片,
B)提供至少一个金属表面,
C)将保护层施加到至少一个金属表面上,其中保护层包括至少一个杂环卡宾作为保护材料或由其构成,其中在至少一个N杂环卡宾和至少一个金属表面之间构成共价键,并且其中至少一个N杂环卡宾作为单层自定向。换言之,通过将N杂环卡宾连接到金属表面上,进行N杂环卡宾在保护层之内的定向。特别地,N杂环卡宾作为单层定向。
根据至少一个实施方式,步骤C)借助于气相沉积、尤其物理气相沉积(PVD)和/或化学气相沉积(CVD)进行。
根据至少一个实施方式,步骤C)借助于湿化学方法进行。特别地,如下方法是适合的,所述方法适合于从溶液中涂覆N杂环卡宾。特别地,步骤C)能够借助于旋涂、印刷、浸涂或喷涂进行。
根据至少一个实施方式,在步骤C)之后,进行附加的步骤D):
D)将被接触的光电子半导体芯片和用保护层覆层的金属表面囊封。借此,保护层变为光电子器件的组成部分并且保留在光电子器件中。
根据至少一个实施方式,步骤D)借助于由硅树脂构成的囊封件进行。
附图说明
从下面结合附图描述的实施例中得出其他的优点、有利的实施方式和改进形式。
附图示出:
图1A、1B和2和3分别示出根据一个实施方式的光电子器件100的示意侧视图,和
图4A至4C示出根据一个实施方式的光电子器件100的侧视图的示意局部图。
在实施例和附图中,相同的、同类的或起相同作用的元件能够分别设有相同的附图标记。示出的元件和其相互间的大小关系不能够视为是合乎比例的。更确切地说,为了更好的可视性和/或为了更好的理解能够夸大地示出个别元件、即例如层、组件、器件和区域。
具体实施方式
图1A示出根据一个实施方式的光电子器件100的示意侧视图。光电子器件100具有载体7。载体7例如能够为印刷电路板(PCB)、陶瓷衬底、电路板或铝板。在载体7下游设置有壳体8。壳体8具有导体框6。导体框6具有电连接部位,被接触的半导体芯片2与所述电连接部位电连接。壳体8具有凹部9,在所述凹部之内设置有被接触的半导体芯片2。被接触的半导体芯片2设置在导体框6的区域上。半导体芯片2具有焊盘12和焊线11,借助所述焊盘和焊线进行经由导体框6的电连接。光电子器件100具有金属表面1。金属表面1在此尤其是导体框6的以及焊线11的和焊盘12的存在于凹部9之内的金属表面。器件100能够具有保护层5(在此未示出,参见图1B)。
图1B与图1A的区别在于:保护层5施加到光电子器件100的金属表面1上。特别地,焊线11形状配合地由保护层5包覆。此外,焊盘12形状配合地由保护层5包覆。保护层尤其在施加焊线11和焊盘12之后产生。特别地,保护层5借助于气相沉积或湿化学方法来产生。
借此能够提供光电子器件100,所述光电子器件尤其在凹部9之内具有全部借助保护层5覆盖的金属表面1。保护层5尤其相对于气体、尤其腐蚀性气体、即例如硫化氢是防扩散的。借此能够防止光电子器件100的腐蚀进而提高光电子器件100的长期稳定性。
图2示出根据一个实施方式的光电子器件100的示意侧视图。光电子器件100具有载体7。在载体7下游设置有连接部位13。此外,在载体7下游设置有被接触的半导体芯片2。被接触的半导体芯片2在其辐射出射面上具有两个焊盘12,所述辐射出射面背离载体7。焊盘12分别借助于焊线11与连接部位13连接。光电子器件100的金属表面1借助保护层5覆盖或者由其包覆。图2的光电子器件100与图1B的光电子器件100的区别在于:在被接触的半导体芯片2的辐射出射面之上、即在其上方进行接触。
附加地,光电子器件100能够具有囊封件10(在此未示出)。
图3示出根据一个实施方式的光电子器件100的示意侧视图。光电子器件100具有载体7。载体7具有连接部位13。经由连接部位13接触半导体芯片2。连接部位13是金属的。金属的连接部位13由保护层5至少局部地覆盖。光电子器件100能够借助于囊封件10囊封。
图4A至4C分别示出根据一个实施方式的光电子器件100的示意侧视图的局部。图1A示出金属表面1,所述金属表面例如能够是焊盘12的、焊线11的金属表面或导体框6的连接部位。金属表面1具有原子、例如金属原子X。经由所述金属原子X通过直接的共价键连接保护材料3,所述保护材料包括N杂环卡宾。
图4B示出三个N杂环卡宾共价连接到金属表面1上。保护层5成形为自组装单层或单子层。特别地,自组装单层具有小于或等于1nm的层厚度。
图4C示出根据一个实施方式的光电子器件100的示意侧视图的局部。图4C示出N杂环卡宾14经由共价键连接到金属表面1上。借助图4C应显而易见的是:分子、即N杂环卡宾分子构成自组装单层,其中分子具有长轴,所述长轴朝金属表面1倾斜。
结合附图描述的实施例和其特征也能够根据其他实施例彼此组合,即使这些组合未明确地在附图中示出时也如此。此外,,结合附图描述的实施例能够具有根据概述部分中的描述的附加的或替选的特征。
本发明不通过根据实施例进行的描述局限于此。更确切地说,本发明包括任意新特征以及特征的任意组合,这尤其包含权利要求中的特征的任意组合,即使当所述特征或所述组合本身没有在权利要求或实施例中明确地说明时也如此。
本申请要求德国专利申请102015108736.7的优先权,其公开内容在此通过参考并入本文。
附图标记列表
100 光电子器件
1 金属表面
2 被接触的半导体芯片
4 共价键
5 保护层
14 N杂环卡宾
3 保护材料
6 导体框
8 壳体
9 凹部
10 囊封件
11 焊线
12 焊盘
13 连接部位
Claims (13)
1.一种具有至少一个金属表面(1)的光电子器件(100),所述光电子器件包括:
-被接触的光电子半导体芯片(2),所述光电子半导体芯片设计用于发射辐射;
-保护层(5),所述保护层设置在至少一个所述金属表面(1)上,
其中所述保护层(5)包括由至少一个N杂环卡宾(14)构成的保护材料(3),
其中在所述保护材料(3)和至少一个所述金属表面(1)之间构成共价键(4)。
2.根据权利要求1所述的光电子器件(100),其中所述保护层(5)成形为自组装单层,并且具有小于或等于1nm的层厚度。
3.根据上述权利要求中任一项所述的光电子器件(100),其中所述保护材料(3)是至少一个N杂环卡宾(14),其中所述N杂环卡宾(14)选自:
其中R1、R1’、R2、R3、R4、R5、R6、R7、R8、R9、R10和R11彼此独立地选自:氢,烷基,烷氧基,具有胺的基团,酰胺,酯,碳酸酯,取代的或未取代的芳烃,取代的或未取代的杂芳烃,卤素,拟卤素,和
其中-X是与所述金属表面(1)的共价键(4)。
4.根据上述权利要求中任一项所述的光电子器件(100),其中所述保护材料(3)选自:
其中R1和R2分别是烷基取代的苯,或者
其中R1、R2和R9分别是苯,并且
其中-X是与所述金属表面(1)的共价键(4)。
5.根据上述权利要求中任一项所述的光电子器件(100),其中所述金属表面(1)选自:第一金属连接接触部的表面,第二金属连接接触部的表面,导体框(6)的表面,焊盘(12)的表面和焊线(11)的表面,并且其中所述金属表面(1)包括至少一种金属或合金,所述金属或合金选自:银、铝、镉、钡、铟、镁、钙、锂或金。
6.根据上述权利要求中任一项所述的光电子器件(100),其中所述光电子器件(100)的全部金属表面(1)都形状配合地借助所述保护层(5)覆盖。
7.根据上述权利要求中任一项所述的光电子器件(100),其中被接触的所述光电子半导体芯片(2)设置在具有凹部(9)的壳体(8)中,其中所述光电子器件(100)的所述金属表面(1)至少包括焊盘(12)的、焊线(11)的和导线框(6)的金属表面,其中所述保护层(5)形状配合地覆盖所述光电子器件(2)在所述凹部(9)之内的所述金属表面(1),其中所述凹部借助包括硅树脂的囊封件(10)囊封。
8.根据上述权利要求中任一项所述的光电子器件(100),其中所述保护层(5)相对于腐蚀性气体是防扩散的。
9.一种用于制造具有至少一个金属表面(1)的根据权利要求1至8中任一项所述的光电子器件(100)的方法,所述方法具有如下步骤:
A)提供被接触的光电子半导体芯片(2),
B)提供至少一个金属表面(1),
C)将保护层(5)施加到至少一个所述金属表面(1)上,其中所述保护层(5)包括至少一个N杂环卡宾(14)作为保护材料(3),其中在至少一个所述N杂环卡宾(14)和至少一个所述金属表面(1)之间构成共价键(4),并且至少一个所述N杂环卡宾(14)作为单层自定向。
10.根据权利要求9所述的方法,其中步骤C)借助于气相沉积进行。
11.根据权利要求9或10所述的方法,其中步骤C)借助于湿化学方法进行。
12.根据权利要求9至11中任一项所述的方法,,其中在步骤C)之后,进行附加的步骤D):
D)将被接触的所述光电子半导体芯片(2)和由所述保护层(5)覆层的所述金属表面(1)囊封。
13.根据权利要求12所述的方法,其中步骤D)借助于由硅树脂构成的囊封件(10)进行。
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DE102015108736.7 | 2015-06-02 | ||
DE102015108736.7A DE102015108736A1 (de) | 2015-06-02 | 2015-06-02 | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
PCT/EP2016/061806 WO2016193098A1 (de) | 2015-06-02 | 2016-05-25 | Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements |
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US11239397B2 (en) * | 2019-12-11 | 2022-02-01 | Mikro Mesa Technology Co., Ltd. | Breathable and waterproof micro light emitting diode display |
DE102021113715A1 (de) * | 2021-05-27 | 2022-12-01 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements |
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CN107683533B (zh) | 2019-12-10 |
WO2016193098A1 (de) | 2016-12-08 |
DE102015108736A1 (de) | 2016-12-08 |
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US10256379B2 (en) | 2019-04-09 |
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