JP2018512826A - メタリック調の被覆を有するワイヤレス電気充電式装置 - Google Patents
メタリック調の被覆を有するワイヤレス電気充電式装置 Download PDFInfo
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Abstract
Description
本発明の第1の実施形態によると、35nmの厚さ(すなわち、1nm〜100nmの厚さ範囲)のシリコン層が、環境から電子部品を保護するプラスチック筐体の表面に半導体層として形成される。生成されるであろう表面構造を平滑にするために、まず、プライマー(UVアクリルラッカー)を表面に塗布する。マグネトロンスパッタリングによってSi層を形成した後に、この例ではカバー層(UVアクリルラッカー)を、この例では、薄いSi層をさらに保護するために、塗布する。その結果、帯青〜帯黄色のメタリックのチラチラ光る表面になる。シリコンの導電率は低いため、誘導充電装置は、電気的にまたは容量的に絶縁されていない。
本発明の第2の実施形態によると、半導体層は層システムとして形成される。これは、半導体、たとえばSiと、誘電体、たとえばSiO2とを有する交互層システムとして使用可能である。この場合も、Si層の全厚は、10nm〜100nmの間の範囲であるべきである。現在では、電磁放射のスペクトルの可視域において望ましい伝播および反射特徴を得るために、熟練した作業者は、光学薄膜用の高性能最適化プログラムを利用可能である。したがって、より詳細な実施形態はここでは省略する。
・連続生産について比較的容易に得られるメタリックの外観を有する表面の生産のための、ラッカー被覆、UV硬化、およびPVDプロセス
・下にある電子部品に対するメタリック調の表面の電気的および/または磁気的干渉の回避
・メタリックな外観に関する色デザインの多様性
・比較的実現容易な、所望の光沢度の設定
・たとえば電気めっきと比較した場合の、PVDプロセスの高い環境適合性
・プロセス温度が低いことによる、一般に使用される多くの材料の表面の改善
・高耐食性
・薄い非導電性層の使用による、可撓性構造
・シンボルおよびロゴなどの導入の可能性
・正確および/または広範に被覆にバックライトを当てる可能性
要約すると、説明される電子デバイスは、電気的にワイヤレス充電可能な端末装置として、またはそのような端末装置のための送信装置として使用可能な少なくとも1つの電子部品を含む。この電子デバイスは、110〜205kHzの周波数範囲における電子部品と外部電子部品との間の電磁相互作用を可能にするプラスチック表面を有しており、プラスチック表面がメタリックの外観を有することを特徴とする。被覆は、メタリックの外観を有し、少なくとも1つの半導体材料または少なくとも1つの誘電体を含む、少なくとも1つの層を含む。
・PVD法でメタリック調層を堆積することによってメタリックカラーの印象を生成するステップであり、メタリック調層は少なくとも半導体材料または誘電体を含む、ステップ
好ましい実施形態では、メタリック調層を有する電子デバイスを製造するための方法は、さらに次のステップを含む。
・上述のようにメタリック調層を堆積する前に、主にUV放射によってUV硬化ラッカーを層としてプラスチック表面に塗布し、UV硬化ラッカー層を硬化するステップ
および/または
・UV硬化ラッカーをトップコートとしてメタリック調層上に塗布するステップ
・主にUV放射によってトップコートを硬化するステップ
Claims (15)
- 電気的にコードレスで再充電可能な端末装置または前記端末装置のための送信機として使用可能な電子部品を少なくとも含む電子デバイスであって、前記電子デバイスは、110〜205kHzの周波数範囲における前記電子部品と外部電子部品との間の電磁相互作用を可能にするプラスチック表面を有し、前記プラスチック表面がメタリックな外観の被覆を有することを特徴とし、前記被覆は、少なくとも1つの半導体材料または少なくとも1つの誘電体を含む少なくとも1つのメタリック調層を含む、電子デバイス。
- 前記メタリック調の被覆のCIELAB空間における色値は20<L<98、−10<a<10、−10<b<10の値の範囲内であることを特徴とする、請求項1に記載の電子デバイス。
- 前記少なくとも1つのメタリック調層は、1つ以上の半導体材料で構成されていることを特徴とする、請求項1または2に記載の電子デバイス。
- 前記少なくとも1つのメタリック調層は、1つ以上の誘電体で構成されていることを特徴とする、請求項1または2に記載の電子デバイス。
- 前記被覆は2つ以上のメタリック調の交互に堆積された層を含む多層構造として形成されており、前記層のうちの少なくとも1つは、1つ以上の半導体材料、およびその上または下に位置する1つ以上の誘電体から構成されていることを特徴とする、請求項1または2に記載の電子デバイス。
- 前記半導体材料を含む層のうちの少なくとも1つは、シリコンを半導体材料として、好ましくはシリコンを主成分として含み、さらに好ましくは、シリコンから構成されていることを特徴とする、請求項1〜3および5のいずれか1項に記載の電子デバイス。
- 前記誘電体を含む層のうちの少なくとも1つは、二酸化ケイ素を前記誘電体として、好ましくは二酸化ケイ素を主成分として含み、さらに好ましくは、二酸化ケイ素から構成されていることを特徴とする、請求項1、2、4、および5のいずれか1項に記載の電子デバイス。
- 前記メタリック調層の層厚または前記メタリック調層の全層厚は5〜200nmの間であることを特徴とする、請求項1〜7のいずれか1項に記載の電子デバイス。
- 前記被覆は、前記プラスチック表面と前記少なくとも1つのメタリック調層との間に少なくとも1つのUV硬化ラッカーを含むことを特徴とする、請求項1〜8のいずれか1項に記載の電子デバイス。
- 前記被覆は環境からの保護のために前記被覆を仕上げるためのトップコートとして少なくとも1つのラッカーを含み、前記ラッカーはUV硬化または半透明色の二液型ポリウレタンラッカーであることを特徴とする、請求項1〜9のいずれか1項に記載の電子デバイス。
- 前記電子デバイスはQi規格に準拠するコードレス再充電式装置であることを特徴とする、請求項1〜10のいずれか1項に記載の電子デバイス。
- 請求項1〜11のいずれか1項以上に記載の電子デバイスを製造するための方法であって、前記方法は、
前記電子デバイスのプラスチック表面を提供するステップと、
PVD法によってメタリック調層を堆積することによってメタリックカラーの印象を生成するステップとを含み、前記メタリック調層は、少なくとも1つの半導体材料または誘電体を含む、方法。 - 前記メタリック調層を堆積する前に、主にUV放射によって、UV硬化ラッカーを層として前記プラスチック表面に塗布し、前記UV硬化ラッカー層を硬化するステップ、および/または
UV硬化ラッカーまたは半透明色の二液型ポリウレタンラッカーをトップコートとして前記メタリック調層に塗布するステップ、および
主にUV放射によって前記トップコートを硬化するステップ、
を含む、請求項12に記載の電子デバイスを製造するための方法。 - 前記被覆された表面の色を、多層構造の形態の少なくとも1つの半導体層と少なくとも1つの誘電体層との組合せによって、調整することを特徴とする、請求項12または13に記載の方法。
- 前記被覆された表面の色を、前記被覆、前記メタリック調層、または前記多層構造の層厚を適合させることによって調整することを特徴とする、請求項12〜14のいずれか1項に記載の方法。
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