JP2018506607A - コバルト及び/又はコバルト合金含有の基板の研磨のための化学機械研磨(cmp)組成物の使用 - Google Patents
コバルト及び/又はコバルト合金含有の基板の研磨のための化学機械研磨(cmp)組成物の使用 Download PDFInfo
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- JP2018506607A JP2018506607A JP2017533933A JP2017533933A JP2018506607A JP 2018506607 A JP2018506607 A JP 2018506607A JP 2017533933 A JP2017533933 A JP 2017533933A JP 2017533933 A JP2017533933 A JP 2017533933A JP 2018506607 A JP2018506607 A JP 2018506607A
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- 125000000129 anionic group Chemical group 0.000 description 1
- 239000008365 aqueous carrier Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000005311 autocorrelation function Methods 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000007630 basic procedure Methods 0.000 description 1
- 125000003354 benzotriazolyl group Chemical class N1N=NC2=C1C=CC=C2* 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 238000005537 brownian motion Methods 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- HJMZMZRCABDKKV-UHFFFAOYSA-N carbonocyanidic acid Chemical compound OC(=O)C#N HJMZMZRCABDKKV-UHFFFAOYSA-N 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 229960003067 cystine Drugs 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 235000011087 fumaric acid Nutrition 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- ZDXPYRJPNDTMRX-UHFFFAOYSA-N glutamine Natural products OC(=O)C(N)CCC(N)=O ZDXPYRJPNDTMRX-UHFFFAOYSA-N 0.000 description 1
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- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
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- 239000012212 insulator Substances 0.000 description 1
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- AGPKZVBTJJNPAG-UHFFFAOYSA-N isoleucine Natural products CCC(C)C(N)C(O)=O AGPKZVBTJJNPAG-UHFFFAOYSA-N 0.000 description 1
- 229960000310 isoleucine Drugs 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 230000033001 locomotion Effects 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229930182817 methionine Natural products 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 125000001037 p-tolyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C([H])([H])[H] 0.000 description 1
- 230000020477 pH reduction Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 150000004965 peroxy acids Chemical class 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- COLNVLDHVKWLRT-UHFFFAOYSA-N phenylalanine Natural products OC(=O)C(N)CC1=CC=CC=C1 COLNVLDHVKWLRT-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000467 phytic acid Substances 0.000 description 1
- 235000002949 phytic acid Nutrition 0.000 description 1
- 229940068041 phytic acid Drugs 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012643 polycondensation polymerization Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 235000018102 proteins Nutrition 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 150000003856 quaternary ammonium compounds Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- 235000011044 succinic acid Nutrition 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
(A)無機粒子、
(B)一般式(I)、
の置換テトラゾール誘導体、
(C)少なくとも1種のアミノ酸
(D)少なくとも1種の酸化剤、及び
(E)水性媒体
を含み、前記CMP組成物(Q)が7〜10のpHを有する化学機械研磨(CMP)組成物(Q)の使用が見出された。
(A)それぞれのCMP組成物の総質量に基づいて、合計で0.01質量%〜3質量%の量の、コロイドシリカ粒子、
(B)それぞれのCMP組成物の総質量に基づいて、合計で0.003質量%〜0.15質量%の量の、5−フェニル−1H−テトラゾール、5−(4−メチルフェニル)−1H−テトラゾール、5−(エチルチオ)−1H−テトラゾール、5−アミノテトラゾール一水和物及び1H−テトラゾール−5−酢酸からなる群から選択された、少なくとも1種の置換テトラゾール誘導体(B)、
(C)それぞれのCMP組成物の総質量に基づいて、合計で0.2質量%〜0.9質量%の量の、グリシン、アラニン、ロイシン、バリン、システイン、セリン及びプロリン、又はそれらの塩からなる群から選択された、少なくとも1種のアミノ酸(C)、
(D)それぞれのCMP組成物の総質量に基づいて、合計で0.2質量%〜2質量%の量の、過酸化水素、
(E)水性媒体、
を含む、化学機械研磨(CMP)組成物(Q)が提供され、
前記CMP組成物(Q)が7〜10のpHを有する。
− 半金属、半金属酸化物若しくは炭化物を含む、金属、金属酸化物若しくは炭化物などの無機粒子、又は
− 無機粒子の混合物、
であり得る。
− 1種のコロイド無機粒子、
− 1種のヒュームド無機粒子、
− 異なる種のコロイド無機粒子及び/又はヒュームド無機粒子の混合物、
であり得る。
形状係数=4π(面積/周長2)
球形度=(Mxx−Myy)−[4Mxy 2+(Myy−Mxx)2]0.5/(Mxx−Myy)+[4Mxy 2+(Myy−Mxx)2]0.5
伸び=(1/球形度)0.5
(式中、
Mは、それぞれの粒子の重心であり、
Mxx=Σ(x−x平均)2/N、
Myy=Σ(y−y平均)2/N、
Mxy=Σ[(x−x平均)*(y−y平均)]/N、
Nは、それぞれの粒子の画像を構成する画素の数であり、
x、yは、画素の座標であり、
x平均は、前記粒子の画像を構成するN画素のx座標の平均値であり、
y平均は、前記粒子の画像を構成するN画素のy座標の平均値である)。
の置換テトラゾール誘導体(B)を含む。
H2N-CR1R2COOH (II)
(式中、R1及びR2は、互いに独立して、水素、1種以上の置換基で置換又は置換されない1〜8個の炭素原子を有する環状、分岐状又は直鎖部分であり、前記1種以上の置換基が、−COOH、−CONH2、−NH2、−S−、−OH、−SH(これに制限していない)などの、窒素含有置換基、酸素含有置換基、硫黄含有置換基、並びにそれらの混合物及び塩から選択される)
で表される。
(A)それぞれのCMP組成物の総質量に基づいて、0.01質量%〜1.8質量%の総量のコロイドシリカ粒子、
(B)それぞれのCMP組成物の総質量に基づいて、0.008質量%〜0.08質量%の総量の5−フェニル−1H−テトラゾール、
(C)それぞれのCMP組成物の総質量に基づいて0.35質量%〜0.8質量%の総量の、グリシン、アラニン、ロイシン、バリン、システイン、セリン及びプロリン又はそれらの塩からなる群から選択された、少なくとも1種のアミノ酸(C)、
(D)それぞれのCMP組成物の総質量に基づいて、0.2質量%〜1.5質量%の総量の過酸化水素、
(E)水性媒体、
ここで、CMP組成物(Q)は、7.8〜8.9のpHを有する。
(A)それぞれのCMP組成物の総質量に基づいて、0.01質量%〜1.8質量%の総量のコロイドシリカ粒子、
(B)それぞれのCMP組成物の総質量に基づいて、0.008質量%〜0.08質量%の総量の5−(4−メチルフェニル)−1H−テトラゾール、
(C)それぞれのCMP組成物の総質量に基づいて0.35質量%〜0.8質量%の総量の、グリシン、アラニン、ロイシン、バリン、システイン、セリン及びプロリン又はそれらの塩からなる群から選択された、少なくとも1種のアミノ酸(C)、
(D)それぞれのCMP組成物の総質量に基づいて、0.2質量%〜1.5質量%の総量の過酸化水素、
(E)水性媒体、
ここで、CMP組成物(Q)は、7.8〜8.9のpHを有する。
(A)それぞれのCMP組成物の総質量に基づいて、0.01質量%〜1.8質量%の総量のコロイドシリカ粒子、
(B)それぞれのCMP組成物の総質量に基づいて、0.008質量%〜0.08質量%の総量の5−(4−エチルチオ)−1H−テトラゾール、
(C)それぞれのCMP組成物の総質量に基づいて0.35質量%〜0.8質量%の総量の、グリシン、アラニン、ロイシン、バリン、システイン、セリン及びプロリン又はそれらの塩からなる群から選択された、少なくとも1種のアミノ酸(C)、
(D)それぞれのCMP組成物の総質量に基づいて、0.2質量%〜1.5質量%の総量の過酸化水素、
(E)水性媒体、
ここで、CMP組成物(Q)は、7.8〜8.9のpHを有する。
(A)それぞれのCMP組成物の総質量に基づいて、0.01質量%〜1.8質量%の総量のコロイドシリカ粒子、
(B)それぞれのCMP組成物の総質量に基づいて、0.008質量%〜0.08質量%の総量の5−アミノ−1H−テトラゾール一水和物、
(C)それぞれのCMP組成物の総質量に基づいて0.35質量%〜0.8質量%の総量の、グリシン、アラニン、ロイシン、バリン、システイン、セリン及びプロリン又はそれらの塩からなる群から選択された、少なくとも1種のアミノ酸(C)、
(D)それぞれのCMP組成物の総質量に基づいて、0.2質量%〜1.5質量%の総量の過酸化水素、
(E)水性媒体、
ここで、CMP組成物(Q)は、7.8〜8.9のpHを有する。
(A)それぞれのCMP組成物の総質量に基づいて、0.01質量%〜1.8質量%の総量のコロイドシリカ粒子、
(B)それぞれのCMP組成物の総質量に基づいて、0.008質量%〜0.08質量%の総量の5−酢酸−1H−テトラゾール、
(C)それぞれのCMP組成物の総質量に基づいて0.35質量%〜0.8質量%の総量の、グリシン、アラニン、ロイシン、バリン、システイン、セリン及びプロリン又はそれらの塩からなる群から選択された、少なくとも1種のアミノ酸(C)、
(D)それぞれのCMP組成物の総質量に基づいて、0.2質量%〜1.5質量%の総量の過酸化水素、
(E)水性媒体、
ここで、CMP組成物(Q)は、7.8〜8.9のpHを有する。
以下、CMP実験の基本手順を説明する。
Strasbaugh nSpire(Model 6EC)、ViPRR浮動保持リングキャリア(floating retaining ring Carrier);
下向き圧力: 1.5psi;
背面圧: 1.0psi;
保持リング圧力: 1.0psi;
研磨テーブル/キャリア速度: 130/127rmp;
スラリー流速: 300ml/分;
研磨時間: 15秒;(Co)
60秒;(Cu)
研磨パッド: Fujibo H800;
バッキングフィルム: Strasbaugh,DF200(136孔);
調整ツール: Strasbaugh、軟質ブラシ、実験室内;各ウェハの後に、他のウェハの次の処理のために、5ポンドの下向き力で2回の清掃によって、パッドを調整する。ブラシは軟質である。これは、200回の掃引の後でさえも、ブラシが軟質研磨パッド上の除去速度に有意な影響が起こらないことを意味する。
Sartorius LA310 Sスケール又はNAPSON4探針プローブステーションにより、CMP前後のウェハの質量の差により、除去速度を決定する。
Coフィルム:Tiライナ上の2000 A PVD Co(AMT製);
pH複合電極(Schott、ブルーライン22pH電極)を用いて、pH値を測定する。
下記のようにCo−SER実験を行った。2.5x2.5cm PVD Co(AMT製)をカットし、脱イオン水で洗浄した。4探針プローブを用いて、Coフィルムの厚さ(d前)を測定した。0.5%のH2O2で新しく調製したスラリー400mlをビーカーに入れ、その後に50℃まで加熱した。Co試験片を該スラリー中に、入れ、3分間浸した。その後、該試験片を洗浄して、N2で乾燥した。また、同じ装置を用いて、Coフィルムの厚さ(d後)を測定した。以下の式により、Co−SERを決定した:
SER(A/分)=(d前−d後)/3
超純水中に所要の量のグリシンを溶解することにより、10質量%のグリシンの水溶液を調製する。20分攪拌した後、4.8質量%KOH水溶液を添加することにより、溶液を中和し、pHを8.05±0.1まで調整する。濃度を調整するために、残りの水を添加してもよい。超純水中に所要の量のテトラゾールを溶解し、全ての固体テトラゾールが溶解するまで30分攪拌することにより、1質量%のテトラゾールの水性原液を調製する。
35nmの平均一次粒子径(d1)、70nmの平均二次粒子径(d2)(Horiba器具を介して、動的光散乱技術を用いて決定した)、及び約46m2/gの比表面積を有するコクーン状のコロイドシリカ粒子(A1)(例えば、Fuso(登録商標)PL−3)を使用した。
20質量%固形分を有する水性コクーン状シリカ粒子分散系を炭素ホイル上に分散させ、乾燥させた。エネルギーフィルタ型透過電子顕微鏡(EF−TEM)(120キロボルト)及び走査型電子顕微鏡二次電子画像(SEM−SE)(5キロボルト)を用いて、乾燥した分散系を分析した。2k、16ビット、0.6851nm/画素の解像度を有するEF−TEM画像(図4)を分析に使用した。ノイズ抑制後の閾値を使用して、画像を2値化処理した。その後、粒子を手作業で分離した。重なり粒子及びエッジ粒子を、識別し、分析に使用しなかった。上記で定義したECD、形状係数及び球形度を計算し、統計的に分類した。
Claims (14)
- 前記無機粒子(A)がコロイド無機粒子である、請求項1に記載のCMP組成物(Q)の使用。
- 前記コロイド無機粒子がシリカ粒子である、請求項1又は2に記載のCMP組成物(Q)の使用。
- 前記置換テトラゾール誘導体(B)が一般式(I)のものであり、式中、R1が、アリール、アリールアルキル、アミノ、カルボキシル、アルキルカルボキシル又はアルキルチオである、請求項1から3のいずれか一項に記載のCMP組成物(Q)の使用。
- 前記置換テトラゾール誘導体(B)が一般式(I)のものであり、式中、R1が、フェニル、4−メチルフェニル、アミノ、酢酸又はエチルチオである、請求項1から4のいずれか一項に記載のCMP組成物(Q)の使用。
- 前記一般式(I)の置換テトラゾール誘導体(B)の総量が、それぞれのCMP組成物の総質量に基づいて、0.003質量%〜0.1質量%の範囲にある、請求項1から5のいずれか一項に記載のCMP組成物(Q)の使用。
- 前記少なくとも1種のアミノ酸(C)が、グリシン、アラニン、ロイシン、バリン、システイン、セリン及びプロリン、又はそれらの塩である、請求項1から6のいずれか一項に記載のCMP組成物(Q)の使用。
- 前記少なくとも1種のアミノ酸(C)の総量が、それぞれのCMP組成物の総質量に基づいて、0.1質量%〜2.25質量%の範囲にある、請求項1から7のいずれか一項に記載のCMP組成物(Q)の使用。
- 前記酸化剤が過酸化物を含む、請求項1から8のいずれか一項に記載のCMP組成物(Q)の使用。
- 前記酸化剤が過酸化水素である、請求項1から9のいずれか一項に記載のCMP組成物(Q)の使用。
- 化学機械研磨(CMP)組成物であって、
(A)それぞれのCMP組成物の総質量に基づいて、合計で0.01質量%〜3質量%の量の、コロイドシリカ粒子、
(B)それぞれのCMP組成物の総質量に基づいて、合計で0.003質量%〜0.15質量%の量の、5−フェニル−1H−テトラゾール、5−(4−メチルフェニル)−1H−テトラゾール、5−(エチルチオ)−1H−テトラゾール、5−アミノテトラゾール一水和物及び1H−テトラゾール−5−酢酸からなる群から選択された、少なくとも1種の置換テトラゾール誘導体(B)、
(C)それぞれのCMP組成物の総質量に基づいて、合計で0.2質量%〜0.9質量%の量の、グリシン、アラニン、ロイシン、バリン、システイン、セリン及びプロリン、又はそれらの塩からなる群から選択された、少なくとも1種のアミノ酸(C)、
(D)それぞれのCMP組成物の総質量に基づいて、合計で0.2質量%〜2質量%の量の、過酸化水素、
(E)水性媒体、
を含み、前記CMP組成物(Q)が7〜10のpHを有する、化学機械研磨(CMP)組成物。 - 請求項1から11のいずれか一項に記載のCMP組成物(Q)の存在下で、半導体産業に使用される基板(S)の化学機械研磨を含む半導体装置を製造する方法であって、前記基板(S)が、
(i)コバルト、及び/又は
(ii)コバルト合金
を含む、方法。 - コバルトの静的エッチング速度(SER)が100Å/分未満である、請求項12に記載の方法。
- コバルトの材料除去速度(MRR)を300〜6000Å/分の範囲に調整する、請求項12又は13に記載の方法。
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Families Citing this family (7)
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EP3334794B1 (en) * | 2015-08-12 | 2020-02-19 | Basf Se | Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt comprising substrates |
US10233356B2 (en) | 2017-03-06 | 2019-03-19 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing slurry for cobalt-containing substrate |
US10077382B1 (en) | 2017-03-06 | 2018-09-18 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for polishing cobalt-containing substrate |
US10170335B1 (en) * | 2017-09-21 | 2019-01-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for cobalt |
US10947413B2 (en) * | 2019-03-29 | 2021-03-16 | Rohm And Haas Electronic Materials Cmp Holdings | Chemical mechanical polishing method for cobalt with high cobalt removal rates and reduced cobalt corrosion |
WO2021105174A1 (en) * | 2019-11-26 | 2021-06-03 | Rhodia Operations | Cerium based particles, process for producing the same and uses thereof in polishing |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008244316A (ja) * | 2007-03-28 | 2008-10-09 | Fujifilm Corp | 金属用研磨液及び研磨方法 |
JP2008251677A (ja) * | 2007-03-29 | 2008-10-16 | Fujifilm Corp | 金属用研磨液及び研磨方法 |
JP2009064881A (ja) * | 2007-09-05 | 2009-03-26 | Fujifilm Corp | 金属用研磨用組成物及びそれを用いた化学的機械的研磨方法 |
JP2011003665A (ja) * | 2009-06-17 | 2011-01-06 | Jsr Corp | 化学機械研磨用水系分散体およびそれを用いた化学機械研磨方法 |
JP2012182158A (ja) * | 2011-02-08 | 2012-09-20 | Hitachi Chem Co Ltd | 研磨液、及びこの研磨液を用いた基板の研磨方法 |
WO2014132641A1 (ja) * | 2013-02-28 | 2014-09-04 | 株式会社フジミインコーポレーテッド | コバルト除去のための研磨スラリー |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5230833A (en) | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
JP4078787B2 (ja) * | 2000-03-31 | 2008-04-23 | Jsr株式会社 | 化学機械研磨用水系分散体 |
US20040175942A1 (en) | 2003-01-03 | 2004-09-09 | Chang Song Y. | Composition and method used for chemical mechanical planarization of metals |
US20050136670A1 (en) * | 2003-12-19 | 2005-06-23 | Ameen Joseph G. | Compositions and methods for controlled polishing of copper |
JP2009503910A (ja) * | 2005-08-05 | 2009-01-29 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 金属フィルム平坦化用高スループット化学機械研磨組成物 |
JP2007273910A (ja) * | 2006-03-31 | 2007-10-18 | Fujifilm Corp | 研磨用組成液 |
JP2009087968A (ja) | 2007-09-27 | 2009-04-23 | Fujifilm Corp | 金属用研磨液、及び化学的機械的研磨方法 |
CN102318042B (zh) * | 2009-02-16 | 2015-07-01 | 日立化成株式会社 | 铜研磨用研磨剂和使用了其的研磨方法 |
CN102304327A (zh) | 2011-07-05 | 2012-01-04 | 复旦大学 | 一种基于金属Co的抛光工艺的抛光液 |
US20130186850A1 (en) * | 2012-01-24 | 2013-07-25 | Applied Materials, Inc. | Slurry for cobalt applications |
JP6057706B2 (ja) * | 2012-12-28 | 2017-01-11 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
-
2015
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008244316A (ja) * | 2007-03-28 | 2008-10-09 | Fujifilm Corp | 金属用研磨液及び研磨方法 |
JP2008251677A (ja) * | 2007-03-29 | 2008-10-16 | Fujifilm Corp | 金属用研磨液及び研磨方法 |
JP2009064881A (ja) * | 2007-09-05 | 2009-03-26 | Fujifilm Corp | 金属用研磨用組成物及びそれを用いた化学的機械的研磨方法 |
JP2011003665A (ja) * | 2009-06-17 | 2011-01-06 | Jsr Corp | 化学機械研磨用水系分散体およびそれを用いた化学機械研磨方法 |
JP2012182158A (ja) * | 2011-02-08 | 2012-09-20 | Hitachi Chem Co Ltd | 研磨液、及びこの研磨液を用いた基板の研磨方法 |
WO2014132641A1 (ja) * | 2013-02-28 | 2014-09-04 | 株式会社フジミインコーポレーテッド | コバルト除去のための研磨スラリー |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2020255582A1 (ja) * | 2019-06-20 | 2020-12-24 | ||
JP7244642B2 (ja) | 2019-06-20 | 2023-03-22 | 富士フイルム株式会社 | 研磨液、及び、化学的機械的研磨方法 |
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