JP6720185B2 - コバルト及び/又はコバルト合金含有の基板の研磨のための化学機械研磨(cmp)組成物の使用 - Google Patents
コバルト及び/又はコバルト合金含有の基板の研磨のための化学機械研磨(cmp)組成物の使用 Download PDFInfo
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- JP6720185B2 JP6720185B2 JP2017533954A JP2017533954A JP6720185B2 JP 6720185 B2 JP6720185 B2 JP 6720185B2 JP 2017533954 A JP2017533954 A JP 2017533954A JP 2017533954 A JP2017533954 A JP 2017533954A JP 6720185 B2 JP6720185 B2 JP 6720185B2
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- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
(A)無機粒子、
(B)腐食防止剤としての、一般式1〜5、
の少なくとも1つのカルボン酸官能基を有する置換芳香族化合物、
(C)少なくとも1種のアミノ酸
(D)少なくとも1種の酸化剤、及び
(E)水性媒体
を含み、前記CMP組成物(Q)が7〜10のpHを有する化学機械研磨(CMP)組成物(Q)の使用が見出された。
(A)それぞれのCMP組成物の総質量に基づいて、合計で0.01質量%〜3質量%の量の、コロイドシリカ粒子、
(B)それぞれのCMP組成物の総質量に基づいて、合計で0.002質量%〜0.1質量%の量の、イソフタル酸、テレフタル酸、2−アミノ−テレフタル酸、4−メチルアミノ安息香酸、4−(ジメチルアミノ)安息香酸、4−メチル−スルホニル安息香酸、トリメシン酸、3−メチルアミノ安息香酸、4−(ジエチルアミノ)安息香酸、3−ジメチルアミノ安息香酸及び2−(ベンジルアミノ)安息香酸からなる群から選択された、少なくとも1つのカルボン酸官能基を有する、少なくとも1種の置換芳香族化合物(B)、
(C)それぞれのCMP組成物の総質量に基づいて、合計で0.2質量%〜0.9質量%の量の、グリシン、アラニン、ロイシン、バリン、システイン、セリン及びプロリン、又はそれらの塩からなる群から選択された、少なくとも1種のアミノ酸(C)、
(D)それぞれのCMP組成物の総質量に基づいて、合計で0.2質量%〜2質量%の量の、過酸化水素、
(E)水性媒体、
を含む、化学機械研磨(CMP)組成物(Q)が提供され、
前記CMP組成物(Q)が7〜10のpHを有する。
− 半金属、半金属酸化物若しくは炭化物を含む、金属、金属酸化物若しくは炭化物などの無機粒子、又は
− 無機粒子の混合物、
であり得る。
− 1種のコロイド無機粒子、
− 1種のヒュームド無機粒子、
− 異なる種のコロイド無機粒子及び/又はヒュームド無機粒子の混合物、
であり得る。
形状係数=4π(面積/周長2)
球形度=(Mxx−Myy)−[4Mxy 2+(Myy−Mxx)2]0.5/(Mxx−Myy)+[4Mxy 2+(Myy−Mxx)2]0.5
伸び=(1/球形度)0.5
(式中、
Mは、それぞれの粒子の重心であり、
Mxx=Σ(x−x平均)2/N、
Myy=Σ(y−y平均)2/N、
Mxy=Σ[(x−x平均)*(y−y平均)]/N、
Nは、それぞれの粒子の画像を構成する画素の数であり、
x、yは、画素の座標であり、
x平均は、前記粒子の画像を構成するN画素のx座標の平均値であり、
y平均は、前記粒子の画像を構成するN画素のy座標の平均値である)。
R1は、好ましくは、H、ヒドロキシ、アルキル、アリール、アミノ、アルキルアミノ、アルキルアリールアミノ、ベンジルアミノ、カルボキシル、アルキルスルホニル、スルホン酸、スルホン酸塩、チオ又はアルキルチオであってもよく、より好ましくは、R1は、H、ヒドロキシル、メチル、エチル、プロピル、ブチル、フェニル、ベンジル、アミノ、モノ−メチルアミノ、ジメチルアミノ、モノ−エチルアミノ、ジエチルアミノ、カルボキシル、メチルスルホニル、エチルスルホニル、チオ、メチルチオ又はエチルチオであってもよく、最も好ましくは、R1は、H、ヒドロキシル、アミノ、モノ−メチルアミノ、ジメチルアミノ、モノ−エチルアミノ、ジエチルアミノ、カルボキシル、メチルスルホニル又はエチルスルホニルであってもよく、特に好ましくは、R1は、モノ−メチルアミノ、ジメチルアミノ、ジエチルアミノ、カルボキシル又はメチルスルホニルであってもよく、
R2は、好ましくは、H、ヒドロキシ、アルキル、アリール、アミノ、アルキルアミノ、アルキルアリールアミノ、ベンジルアミノ、カルボキシル、アルキルスルホニル、スルホン酸、スルホン酸塩、チオ又はアルキルチオであってもよく、より好ましくは、R2は、H、ヒドロキシル、メチル、エチル、プロピル、ブチル、フェニル、ベンジル、アミノ、モノ−メチルアミノ、ジメチルアミノ、モノ−エチルアミノ、ジエチルアミノ、カルボキシル、メチルスルホニル、エチルスルホニル、チオ、メチルチオ又はエチルチオであってもよく、最も好ましくは、R2は、アミノ、モノ−メチルアミノ、ジメチルアミノ、モノ−エチルアミノ、ジエチルアミノ又はカルボキシルであってもよく、特に好ましくは、R 2 は、モノ−メチルアミノ又はジメチルアミノであってもよく、
R3は、好ましくは、H、ヒドロキシ、アルキル、アリール、アミノ、アルキルアミノ、アルキルアリールアミノ、ベンジルアミノ、カルボキシル、アルキルスルホニル、スルホン酸、スルホン酸塩、チオ又はアルキルチオであってもよく、より好ましくは、R3は、H、ヒドロキシル、メチル、エチル、プロピル、ブチル、ベンジルアミノ、アミノ、モノ−メチルアミノ、ジメチルアミノ、モノ−エチルアミノ、ジエチルアミノ、カルボキシル、メチルスルホニル、エチルスルホニル、チオ、メチルチオ又はエチルチオであってもよく、最も好ましくは、R3は、ベンジルアミノ、アミノ、モノ−メチルアミノ、ジメチルアミノ、モノ−エチルアミノ、ジエチルアミノ又はカルボキシルであってもよく、特に好ましくは、R3はベンジルアミノであってもよく、
R4は、好ましくは、H、ヒドロキシ、アルキル、アリール、アミノ、アルキルアミノ、アルキルアリールアミノ、ベンジルアミノ、カルボキシル、アルキルスルホニル、スルホン酸、スルホン酸塩、チオ又はアルキルチオであってもよく、より好ましくは、R4は、H、ヒドロキシル、メチル、エチル、プロピル、ブチル、アミノ、モノ−メチルアミノ、ジメチルアミノ、モノ−エチルアミノ、ジエチルアミノ、カルボキシル、メチルスルホニル、エチルスルホニル、チオ、メチルチオ又はエチルチオであってもよく、最も好ましくは、R4は、アミノ、モノ−メチルアミノ、ジメチルアミノ、モノ−エチルアミノ、ジエチルアミノ又はカルボキシルであってもよく、特に好ましくは、R4はアミノ又はジメチルアミノであってもよく、
R5は、好ましくは、H、ヒドロキシ、アルキル、アリール、アミノ、アルキルアミノ、アルキルアリールアミノ、ベンジルアミノ、カルボキシル、アルキルスルホニル、スルホン酸、スルホン酸塩、チオ又はアルキルチオであってもよく、より好ましくは、R5は、H、ヒドロキシル、メチル、エチル、プロピル、ブチル、アミノ、モノ−メチルアミノ、ジメチルアミノ、モノ−エチルアミノ、ジエチルアミノ、カルボキシル、メチルスルホニル、エチルスルホニル、チオ、メチルチオ又はエチルチオであってもよく、最も好ましくは、R5は、アミノ、モノ−メチルアミノ、ジメチルアミノ、モノ−エチルアミノ、ジエチルアミノ又はカルボキシルであってもよく、特に好ましくは、R5はカルボキシルであってもよい)
の少なくとも1つのカルボン酸官能基を有する置換芳香族化合物(B)を含む。
H2N-CR1R2COOH (II)
(式中、R 1 及びR 2 は、互いに独立して、水素、1種以上の置換基で置換又は置換されない1〜8個の炭素原子を有する環状、分岐状又は直鎖部分であり、前記1種以上の置換基が、−COOH、−CONH2、−NH2、−S−、−OH、−SH(これに制限していない)などの、窒素含有置換基、酸素含有置換基、硫黄含有置換基、並びにそれらの混合物及び塩から選択される)
で表される。
(A)それぞれのCMP組成物の総質量に基づいて、0.01質量%〜1.8質量%の総量のコロイドシリカ粒子、
(B)それぞれのCMP組成物の総質量に基づいて、0.002質量%〜0.0097質量%の総量のイソフタル酸、
(C)それぞれのCMP組成物の総質量に基づいて0.35質量%〜0.8質量%の総量の、グリシン、アラニン、ロイシン、バリン、システイン、セリン及びプロリン又はそれらの塩からなる群から選択された、少なくとも1種のアミノ酸(C)、
(D)それぞれのCMP組成物の総質量に基づいて、0.2質量%〜1.5質量%の総量の過酸化水素、
(E)水性媒体、
ここで、CMP組成物(Q)は、7.8〜8.9のpHを有する。
(A)それぞれのCMP組成物の総質量に基づいて、0.01質量%〜1.8質量%の総量のコロイドシリカ粒子、
(B)それぞれのCMP組成物の総質量に基づいて、0.002質量%〜0.0097質量%の総量のテレフタル酸、
(C)それぞれのCMP組成物の総質量に基づいて0.35質量%〜0.8質量%の総量の、グリシン、アラニン、ロイシン、バリン、システイン、セリン及びプロリン又はそれらの塩からなる群から選択された、少なくとも1種のアミノ酸(C)、
(D)それぞれのCMP組成物の総質量に基づいて、0.2質量%〜1.5質量%の総量の過酸化水素、
(E)水性媒体、
ここで、CMP組成物(Q)は、7.8〜8.9のpHを有する。
(A)それぞれのCMP組成物の総質量に基づいて、0.01質量%〜1.8質量%の総量のコロイドシリカ粒子、
(B)それぞれのCMP組成物の総質量に基づいて、0.008質量%〜0.08質量%の総量の2−アミノテレフタル酸、
(C)それぞれのCMP組成物の総質量に基づいて0.35質量%〜0.8質量%の総量の、グリシン、アラニン、ロイシン、バリン、システイン、セリン及びプロリン又はそれらの塩からなる群から選択された、少なくとも1種のアミノ酸(C)、
(D)それぞれのCMP組成物の総質量に基づいて、0.2質量%〜1.5質量%の総量の過酸化水素、
(E)水性媒体、
ここで、CMP組成物(Q)は、7.8〜8.9のpHを有する。
(A)それぞれのCMP組成物の総質量に基づいて、0.01質量%〜1.8質量%の総量のコロイドシリカ粒子、
(B)それぞれのCMP組成物の総質量に基づいて、0.008質量%〜0.08質量%の総量の4−メチルアミノ安息香酸、
(C)それぞれのCMP組成物の総質量に基づいて0.35質量%〜0.8質量%の総量の、グリシン、アラニン、ロイシン、バリン、システイン、セリン及びプロリン又はそれらの塩からなる群から選択された、少なくとも1種のアミノ酸(C)、
(D)それぞれのCMP組成物の総質量に基づいて、0.2質量%〜1.5質量%の総量の過酸化水素、
(E)水性媒体、
ここで、CMP組成物(Q)は、7.8〜8.9のpHを有する。
(A)それぞれのCMP組成物の総質量に基づいて、0.01質量%〜1.8質量%の総量のコロイドシリカ粒子、
(B)それぞれのCMP組成物の総質量に基づいて、0.008質量%〜0.08質量%の総量の4−(ジメチルアミノ)安息香酸、
(C)それぞれのCMP組成物の総質量に基づいて0.35質量%〜0.8質量%の総量の、グリシン、アラニン、ロイシン、バリン、システイン、セリン及びプロリン又はそれらの塩からなる群から選択された、少なくとも1種のアミノ酸(C)、
(D)それぞれのCMP組成物の総質量に基づいて、0.2質量%〜1.5質量%の総量の過酸化水素、
(E)水性媒体、
ここで、CMP組成物(Q)は、7.8〜8.9のpHを有する。
(A)それぞれのCMP組成物の総質量に基づいて、0.01質量%〜1.8質量%の総量のコロイドシリカ粒子、
(B)それぞれのCMP組成物の総質量に基づいて、0.008質量%〜0.08質量%の総量の4−メチルスルホニル安息香酸、
(C)それぞれのCMP組成物の総質量に基づいて0.35質量%〜0.8質量%の総量の、グリシン、アラニン、ロイシン、バリン、システイン、セリン及びプロリン又はそれらの塩からなる群から選択された、少なくとも1種のアミノ酸(C)、
(D)それぞれのCMP組成物の総質量に基づいて、0.2質量%〜1.5質量%の総量の過酸化水素、
(E)水性媒体、
ここで、CMP組成物(Q)は、7.8〜8.9のpHを有する。
(A)それぞれのCMP組成物の総質量に基づいて、0.01質量%〜1.8質量%の総量のコロイドシリカ粒子、
(B)それぞれのCMP組成物の総質量に基づいて、0.002質量%〜0.0097質量%の総量のトリメシン酸、
(C)それぞれのCMP組成物の総質量に基づいて0.35質量%〜0.8質量%の総量の、グリシン、アラニン、ロイシン、バリン、システイン、セリン及びプロリン又はそれらの塩からなる群から選択された、少なくとも1種のアミノ酸(C)、
(D)それぞれのCMP組成物の総質量に基づいて、0.2質量%〜1.5質量%の総量の過酸化水素、
(E)水性媒体、
ここで、CMP組成物(Q)は、7.8〜8.9のpHを有する。
(A)それぞれのCMP組成物の総質量に基づいて、0.01質量%〜1.8質量%の総量のコロイドシリカ粒子、
(B)それぞれのCMP組成物の総質量に基づいて、0.008質量%〜0.08質量%の総量の3−メチルアミノ安息香酸、
(C)それぞれのCMP組成物の総質量に基づいて0.35質量%〜0.8質量%の総量の、グリシン、アラニン、ロイシン、バリン、システイン、セリン及びプロリン又はそれらの塩からなる群から選択された、少なくとも1種のアミノ酸(C)、
(D)それぞれのCMP組成物の総質量に基づいて、0.2質量%〜1.5質量%の総量の過酸化水素、
(E)水性媒体、
ここで、CMP組成物(Q)は、7.8〜8.9のpHを有する。
(A)それぞれのCMP組成物の総質量に基づいて、0.01質量%〜1.8質量%の総量のコロイドシリカ粒子、
(B)それぞれのCMP組成物の総質量に基づいて、0.008質量%〜0.08質量%の総量の4−(ジエチルアミノ)安息香酸、
(C)それぞれのCMP組成物の総質量に基づいて0.35質量%〜0.8質量%の総量の、グリシン、アラニン、ロイシン、バリン、システイン、セリン及びプロリン又はそれらの塩からなる群から選択された、少なくとも1種のアミノ酸(C)、
(D)それぞれのCMP組成物の総質量に基づいて、0.2質量%〜1.5質量%の総量の過酸化水素、
(E)水性媒体、
ここで、CMP組成物(Q)は、7.8〜8.9のpHを有する。
(A)それぞれのCMP組成物の総質量に基づいて、0.01質量%〜1.8質量%の総量のコロイドシリカ粒子、
(B)それぞれのCMP組成物の総質量に基づいて、0.008質量%〜0.08質量%の総量の3−ジメチルアミノ安息香酸、
(C)それぞれのCMP組成物の総質量に基づいて0.35質量%〜0.8質量%の総量の、グリシン、アラニン、ロイシン、バリン、システイン、セリン及びプロリン又はそれらの塩からなる群から選択された、少なくとも1種のアミノ酸(C)、
(D)それぞれのCMP組成物の総質量に基づいて、0.2質量%〜1.5質量%の総量の過酸化水素、
(E)水性媒体、
ここで、CMP組成物(Q)は、7.8〜8.9のpHを有する。
(A)それぞれのCMP組成物の総質量に基づいて、0.01質量%〜1.8質量%の総量のコロイドシリカ粒子、
(B)それぞれのCMP組成物の総質量に基づいて、0.008質量%〜0.08質量%の総量の2−(ベンジルアミノ)安息香酸、
(C)それぞれのCMP組成物の総質量に基づいて0.35質量%〜0.8質量%の総量の、グリシン、アラニン、ロイシン、バリン、システイン、セリン及びプロリン又はそれらの塩からなる群から選択された、少なくとも1種のアミノ酸(C)、
(D)それぞれのCMP組成物の総質量に基づいて、0.2質量%〜1.5質量%の総量の過酸化水素、
(E)水性媒体、
ここで、CMP組成物(Q)は、7.8〜8.9のpHを有する。
以下、CMP実験の基本手順を説明する。
Strasbaugh nSpire(Model 6EC)、ViPRR浮動保持リングキャリア(floating retaining ring Carrier);
下向き圧力: 1.5psi;
背面圧: 1.0psi;
保持リング圧力: 1.0psi;
研磨テーブル/キャリア速度: 130/127rmp;
スラリー流速: 300ml/分;
研磨時間: 15秒;(Co)
60秒;(Cu)
研磨パッド: Fujibo H800;
バッキングフィルム: Strasbaugh,DF200(136孔);
調整ツール: Strasbaugh、ソフトブラシ、実験室内;各ウェハの後に、他のウェハの次の処理のために、5ポンドの下向き力で2回の清掃によって、パッドを調整する。ブラシは軟質である。これは、200回の掃引の後でさえも、ブラシが軟質研磨パッド上の除去速度に有意な影響が起こらないことを意味する。
Sartorius LA310 Sスケール又はNAPSON4探針プローブステイションにより、CMP前後のウェハの質量の差により、除去速度を決定する。
Coフィルム:Tiライナ上の2000 A PVD Co(AMT製);
pH複合電極(Schott、ブルーライン22pH電極)を用いて、pH値を測定する。
下記のようにCo−SER実験を行った。2.5x2.5cm PVD Co(AMT製)をカットし、脱イオン水で洗浄した。4探針プローブを用いて、Coフィルムの厚さ(d前)を測定した。0.5%のH2O2で新しく調製したスラリー400mlをビーカーに入れ、その後に50℃まで加熱した。Co試験片を該スラリー中に、入れ、3分間浸した。その後、該試験片を洗浄して、N2で乾燥した。また、同じ装置を用いて、Coフィルムの厚さ(d後)を測定した。以下の式により、Co−SERを決定した:
超純水中に所要の量のグリシンを溶解することにより、10質量%のグリシンの水溶液を調製する。20分攪拌した後、4.8質量%KOH水溶液を添加することにより、溶液を中和し、pHを8.05±0.1まで調整する。濃度を調整するために、残りの水を添加してもよい。超純水中に所要の量の置換芳香族化合物(B)を溶解し、全ての固体置換芳香族化合物が溶解するまで30分攪拌することにより、1質量%のそれぞれの置換芳香族化合物(B)の水性原液を調製する。
35nmの平均一次粒子径(d1)、70nmの平均二次粒子径(d2)(Horiba器具を介して、動的光散乱技術を用いて決定した)、及び約46m2/gの比表面積を有するコクーン状のコロイドシリカ粒子(A1)(例えば、Fuso(登録商標)PL−3)を使用した。
20質量%固形分を有する水性コクーン状シリカ粒子分散系を炭素ホイル上に分散させ、乾燥させた。エネルギーフィルタ型透過電子顕微鏡(EF−TEM)(120キロボルト)及び走査型電子顕微鏡二次電子画像(SEM−SE)(5キロボルト)を用いて、乾燥した分散系を分析した。2k、16ビット、0.6851nm/画素の解像度を有するEF−TEM画像(図4)を分析に使用した。ノイズ抑制後の閾値を使用して、画像を2値化処理した。その後、粒子を手作業で分離した。重なり粒子及びエッジ粒子を、識別し、分析に使用しなかった。上記で定義したECD、形状係数及び球形度を計算し、統計的に分類した。
Claims (12)
- (i)コバルト及び/又は(ii)コバルト合金を含む基板(S)の化学機械研磨のための化学機械研磨(CMP)組成物(Q)の使用方法であって、前記CMP組成物(Q)が、
(A)無機粒子、
(B)腐食防止剤としての、一般式1〜5、
の少なくとも1つのカルボン酸官能基を有する置換芳香族化合物を、前記CMP組成物(Q)の総質量に基づき0.002質量%〜0.01質量%、
(C)少なくとも1種のアミノ酸を、前記CMP組成物(Q)の総質量に基づき0.5質量%〜2.25質量%、
(D)少なくとも1種の酸化剤、及び
(E)水性媒体
を含み、前記CMP組成物(Q)が7〜10のpHを有する、化学機械研磨(CMP)組成物(Q)の使用方法。 - 前記無機粒子(A)がコロイド無機粒子である、請求項1に記載のCMP組成物(Q)の使用方法。
- 前記コロイド無機粒子がシリカ粒子である、請求項1又は2に記載のCMP組成物(Q)の使用方法。
- 前記少なくとも1つのカルボン酸官能基を有する置換芳香族化合物(B)が一般式1〜5の少なくとも1つのものであり、式中、R1が、アミノ、モノ−アルキルアミノ、ジ−アルキルアミノ、カルボキシル、アルキルチオ又はアルキルスルホニルであり、R2が、アミノ、モノ−アルキルアミノ、ジ−アルキルアミノ又はカルボキシルであり、R3がベンジルアミノであり、R4が、アミノ、モノ−アルキルアミノ、ジ−アルキルアミノであり、R5が、アミノ、カルボキシル又はアルキルである、請求項1から3のいずれか一項に記載のCMP組成物(Q)の使用方法。
- 前記少なくとも1つのカルボン酸官能基を有する置換芳香族化合物(B)が一般式1〜5の少なくとも1つのものであり、式中、R1が、アミノ、モノ−メチルアミノ、ジ−メチルアミノ、ジ−エチルアミノ、カルボキシル又はメチルスルホニルであり、R2が、アミノ、モノ−メチルアミノ、ジ−メチルアミノ又はカルボキシルであり、R3がベンジルアミノであり、R4がアミノであり、R5がアミノ又はカルボキシルである、請求項1から4のいずれか一項に記載のCMP組成物(Q)の使用方法。
- 前記少なくとも1種のアミノ酸(C)が、グリシン、アラニン、ロイシン、バリン、システイン、セリン及びプロリン、又はそれらの塩である、請求項1から5のいずれか一項に記載のCMP組成物(Q)の使用方法。
- 前記酸化剤が過酸化物を含む、請求項1から6のいずれか一項に記載のCMP組成物(Q)の使用方法。
- 前記酸化剤が過酸化水素である、請求項1から7のいずれか一項に記載のCMP組成物(Q)の使用方法。
- 化学機械研磨(CMP)組成物であって、
(A)それぞれのCMP組成物の総質量に基づいて、合計で0.01質量%〜3質量%の量の、コロイドシリカ粒子、
(B)それぞれのCMP組成物の総質量に基づいて、合計で0.002質量%〜0.01質量%の量の、イソフタル酸、テレフタル酸、2−アミノテレフタル酸、4−メチルアミノ安息香酸、4−(ジメチルアミノ)安息香酸、4−メチルスルホニル安息香酸、トリメシン酸、3−メチルアミノ安息香酸、4−(ジエチルアミノ)安息香酸、3−ジメチルアミノ安息香酸及び2−(ベンジルアミノ)安息香酸からなる群から選択された、少なくとも1つのカルボン酸官能基を有する、少なくとも1種の置換芳香族化合物(B)、
(C)それぞれのCMP組成物の総質量に基づいて、合計で0.5質量%〜2.25質量%の量の、グリシン、アラニン、ロイシン、バリン、システイン、セリン及びプロリン、又はそれらの塩からなる群から選択された、少なくとも1種のアミノ酸(C)、
(D)それぞれのCMP組成物の総質量に基づいて、合計で0.2質量%〜2質量%の量の、過酸化水素、
(E)水性媒体、
を含み、前記CMP組成物(Q)が7〜10のpHを有する、化学機械研磨(CMP)組成物。 - 請求項1から9のいずれか一項に記載のCMP組成物(Q)の存在下で、半導体産業に使用される基板(S)の化学機械研磨を含む半導体装置を製造する方法であって、前記基板(S)が、
(i)コバルト、及び/又は
(ii)コバルト合金
を含む、方法。 - コバルトの静的エッチング速度(SER)が100Å/分未満である、請求項10に記載の方法。
- コバルトの材料除去速度(MRR)を300〜7200Å/分の範囲に調整する、請求項10又は11に記載の方法。
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