SG11201509374WA - Use of chemical-mechanical polishing (cmp) composition for polishing substance or layer containing at least one iii-v material - Google Patents
Use of chemical-mechanical polishing (cmp) composition for polishing substance or layer containing at least one iii-v materialInfo
- Publication number
- SG11201509374WA SG11201509374WA SG11201509374WA SG11201509374WA SG11201509374WA SG 11201509374W A SG11201509374W A SG 11201509374WA SG 11201509374W A SG11201509374W A SG 11201509374WA SG 11201509374W A SG11201509374W A SG 11201509374WA SG 11201509374W A SG11201509374W A SG 11201509374WA
- Authority
- SG
- Singapore
- Prior art keywords
- polishing
- cmp
- iii
- chemical
- composition
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title 2
- 239000000463 material Substances 0.000 title 1
- 239000000126 substance Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Composite Materials (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP13167941 | 2013-05-15 | ||
PCT/IB2014/061234 WO2014184708A2 (en) | 2013-05-15 | 2014-05-06 | Use of a chemical-mechanical polishing (cmp) composition for polishing a substrate or layer containing at least one iii-v material |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201509374WA true SG11201509374WA (en) | 2015-12-30 |
Family
ID=48444174
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201509374WA SG11201509374WA (en) | 2013-05-15 | 2014-05-06 | Use of chemical-mechanical polishing (cmp) composition for polishing substance or layer containing at least one iii-v material |
Country Status (8)
Country | Link |
---|---|
US (1) | US9765239B2 (en) |
EP (1) | EP2997104A4 (en) |
JP (1) | JP2016524325A (en) |
KR (1) | KR20160009644A (en) |
CN (1) | CN105209563A (en) |
SG (1) | SG11201509374WA (en) |
TW (1) | TW201504411A (en) |
WO (1) | WO2014184708A2 (en) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10227506B2 (en) | 2014-12-16 | 2019-03-12 | Basf Se | Chemical mechanical polishing (CMP) composition for high effective polishing of substrates comprising germanium |
TWI775722B (en) | 2014-12-22 | 2022-09-01 | 德商巴斯夫歐洲公司 | Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and/or cobalt alloy comprising substrates |
US10144850B2 (en) * | 2015-09-25 | 2018-12-04 | Versum Materials Us, Llc | Stop-on silicon containing layer additive |
CN109071238B (en) | 2016-03-30 | 2023-04-04 | 福吉米株式会社 | Method for producing cationically modified silica and cationically modified silica dispersion |
JP6966458B2 (en) * | 2016-09-30 | 2021-11-17 | 株式会社フジミインコーポレーテッド | A method for producing cation-modified silica, a cation-modified silica dispersion, and a method for producing a polishing composition using cation-modified silica, and a polishing composition using cation-modified silica. |
CN106590439B (en) * | 2016-12-07 | 2019-02-05 | 中国电子科技集团公司第十一研究所 | A kind of polishing fluid and the method that gallium antimonide chip is polished using the polishing fluid |
US11186748B2 (en) * | 2017-09-28 | 2021-11-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous anionic functional silica slurry and amine carboxylic acid compositions for selective nitride removal in polishing and methods of using them |
CN109971357B (en) * | 2017-12-27 | 2021-12-07 | 安集微电子(上海)有限公司 | Chemical mechanical polishing solution |
US10995238B2 (en) * | 2018-07-03 | 2021-05-04 | Rohm And Haas Electronic Materials Cmp Holdings | Neutral to alkaline chemical mechanical polishing compositions and methods for tungsten |
US11549034B2 (en) * | 2018-08-09 | 2023-01-10 | Versum Materials Us, Llc | Oxide chemical mechanical planarization (CMP) polishing compositions |
CN109705737A (en) * | 2018-12-28 | 2019-05-03 | 天津洙诺科技有限公司 | A kind of GaAs polishing fluid and preparation method thereof |
US10954411B2 (en) * | 2019-05-16 | 2021-03-23 | Rohm And Haas Electronic Materials Cmp Holdings | Chemical mechanical polishing composition and method of polishing silicon nitride over silicon dioxide and simultaneously inhibiting damage to silicon dioxide |
US10787592B1 (en) * | 2019-05-16 | 2020-09-29 | Rohm And Haas Electronic Materials Cmp Holdings, I | Chemical mechanical polishing compositions and methods having enhanced defect inhibition and selectively polishing silicon nitride over silicon dioxide in an acid environment |
KR102525287B1 (en) | 2019-10-18 | 2023-04-24 | 삼성에스디아이 주식회사 | Cmp slurry composition for polishing copper layer and method for polishing copper layer using the same |
CN110788739A (en) * | 2019-10-31 | 2020-02-14 | 云南北方昆物光电科技发展有限公司 | Polishing method of indium antimonide single crystal wafer |
WO2023180216A1 (en) * | 2022-03-22 | 2023-09-28 | Merck Patent Gmbh | Negatively charged silica particles, method of producing such particles, compositions comprising such particles, and a method of chemical-mechanical polishing using such particles |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3922393A (en) * | 1974-07-02 | 1975-11-25 | Du Pont | Process for polishing silicon and germanium semiconductor materials |
US5387796A (en) * | 1993-05-26 | 1995-02-07 | Epitaxx, Inc. | Low leakage current photodetector arrays |
US6627539B1 (en) * | 1998-05-29 | 2003-09-30 | Newport Fab, Llc | Method of forming dual-damascene interconnect structures employing low-k dielectric materials |
EP1691401B1 (en) * | 1999-06-18 | 2012-06-13 | Hitachi Chemical Co., Ltd. | Method for polishing a substrate using CMP abrasive |
US6776810B1 (en) * | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
US20040175942A1 (en) | 2003-01-03 | 2004-09-09 | Chang Song Y. | Composition and method used for chemical mechanical planarization of metals |
US7022255B2 (en) * | 2003-10-10 | 2006-04-04 | Dupont Air Products Nanomaterials Llc | Chemical-mechanical planarization composition with nitrogen containing polymer and method for use |
US20070037892A1 (en) * | 2004-09-08 | 2007-02-15 | Irina Belov | Aqueous slurry containing metallate-modified silica particles |
US20070049164A1 (en) * | 2005-08-26 | 2007-03-01 | Thomson Clifford O | Polishing pad and method for manufacturing polishing pads |
JP2007103463A (en) * | 2005-09-30 | 2007-04-19 | Sumitomo Electric Ind Ltd | POLISHING SLURRY, SURFACE TREATMENT METHOD OF GaxIn1-xAsyP1-y CRYSTAL, AND GaxIn1-xAsyP1-y CRYSTAL SUBSTRATE |
TW200734436A (en) * | 2006-01-30 | 2007-09-16 | Fujifilm Corp | Metal-polishing liquid and chemical mechanical polishing method using the same |
US20100130013A1 (en) * | 2008-11-24 | 2010-05-27 | Applied Materials, Inc. | Slurry composition for gst phase change memory materials polishing |
JP2010269985A (en) | 2009-05-22 | 2010-12-02 | Fuso Chemical Co Ltd | Sulfonic acid-modified aqueous anionic silica sol and method for producing the same |
SG182790A1 (en) | 2010-02-01 | 2012-09-27 | Jsr Corp | Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method using same |
US8790160B2 (en) * | 2011-04-28 | 2014-07-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for polishing phase change alloys |
JP2013080751A (en) * | 2011-09-30 | 2013-05-02 | Fujimi Inc | Polishing composition |
US8778211B2 (en) * | 2012-07-17 | 2014-07-15 | Cabot Microelectronics Corporation | GST CMP slurries |
-
2014
- 2014-05-06 SG SG11201509374WA patent/SG11201509374WA/en unknown
- 2014-05-06 CN CN201480027213.1A patent/CN105209563A/en active Pending
- 2014-05-06 EP EP14797473.7A patent/EP2997104A4/en not_active Withdrawn
- 2014-05-06 US US14/890,754 patent/US9765239B2/en not_active Expired - Fee Related
- 2014-05-06 KR KR1020157035421A patent/KR20160009644A/en not_active Application Discontinuation
- 2014-05-06 JP JP2016513471A patent/JP2016524325A/en active Pending
- 2014-05-06 WO PCT/IB2014/061234 patent/WO2014184708A2/en active Application Filing
- 2014-05-13 TW TW103116801A patent/TW201504411A/en unknown
Also Published As
Publication number | Publication date |
---|---|
WO2014184708A2 (en) | 2014-11-20 |
EP2997104A4 (en) | 2017-01-25 |
EP2997104A2 (en) | 2016-03-23 |
KR20160009644A (en) | 2016-01-26 |
CN105209563A (en) | 2015-12-30 |
US9765239B2 (en) | 2017-09-19 |
US20160096979A1 (en) | 2016-04-07 |
WO2014184708A3 (en) | 2015-06-25 |
JP2016524325A (en) | 2016-08-12 |
TW201504411A (en) | 2015-02-01 |
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