SG11201509374WA - Use of chemical-mechanical polishing (cmp) composition for polishing substance or layer containing at least one iii-v material - Google Patents
Use of chemical-mechanical polishing (cmp) composition for polishing substance or layer containing at least one iii-v materialInfo
- Publication number
- SG11201509374WA SG11201509374WA SG11201509374WA SG11201509374WA SG11201509374WA SG 11201509374W A SG11201509374W A SG 11201509374WA SG 11201509374W A SG11201509374W A SG 11201509374WA SG 11201509374W A SG11201509374W A SG 11201509374WA SG 11201509374W A SG11201509374W A SG 11201509374WA
- Authority
- SG
- Singapore
- Prior art keywords
- polishing
- cmp
- iii
- chemical
- composition
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP13167941 | 2013-05-15 | ||
| PCT/IB2014/061234 WO2014184708A2 (en) | 2013-05-15 | 2014-05-06 | Use of a chemical-mechanical polishing (cmp) composition for polishing a substrate or layer containing at least one iii-v material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201509374WA true SG11201509374WA (en) | 2015-12-30 |
Family
ID=48444174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201509374WA SG11201509374WA (en) | 2013-05-15 | 2014-05-06 | Use of chemical-mechanical polishing (cmp) composition for polishing substance or layer containing at least one iii-v material |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9765239B2 (en) |
| EP (1) | EP2997104A4 (en) |
| JP (1) | JP2016524325A (en) |
| KR (1) | KR20160009644A (en) |
| CN (1) | CN105209563A (en) |
| SG (1) | SG11201509374WA (en) |
| TW (1) | TW201504411A (en) |
| WO (1) | WO2014184708A2 (en) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018506176A (en) | 2014-12-16 | 2018-03-01 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | Chemical mechanical polishing (CMP) composition for high-efficiency polishing of substrates containing germanium |
| TWI775722B (en) | 2014-12-22 | 2022-09-01 | 德商巴斯夫歐洲公司 | Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and/or cobalt alloy comprising substrates |
| US10144850B2 (en) * | 2015-09-25 | 2018-12-04 | Versum Materials Us, Llc | Stop-on silicon containing layer additive |
| CN109071238B (en) | 2016-03-30 | 2023-04-04 | 福吉米株式会社 | Method for producing cationically modified silica and cationically modified silica dispersion |
| WO2018061656A1 (en) * | 2016-09-30 | 2018-04-05 | 株式会社フジミインコーポレーテッド | Method for producing cationically modified silica, cationically modified silica dispersion, method for producing polishing composition using cationically modified silica, and polishing composition using cationically modified silica |
| CN106590439B (en) * | 2016-12-07 | 2019-02-05 | 中国电子科技集团公司第十一研究所 | A kind of polishing fluid and the method that gallium antimonide chip is polished using the polishing fluid |
| US11186748B2 (en) * | 2017-09-28 | 2021-11-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous anionic functional silica slurry and amine carboxylic acid compositions for selective nitride removal in polishing and methods of using them |
| CN109971357B (en) * | 2017-12-27 | 2021-12-07 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
| US10995238B2 (en) * | 2018-07-03 | 2021-05-04 | Rohm And Haas Electronic Materials Cmp Holdings | Neutral to alkaline chemical mechanical polishing compositions and methods for tungsten |
| US11549034B2 (en) * | 2018-08-09 | 2023-01-10 | Versum Materials Us, Llc | Oxide chemical mechanical planarization (CMP) polishing compositions |
| CN109705737A (en) * | 2018-12-28 | 2019-05-03 | 天津洙诺科技有限公司 | A kind of GaAs polishing fluid and preparation method thereof |
| US10954411B2 (en) * | 2019-05-16 | 2021-03-23 | Rohm And Haas Electronic Materials Cmp Holdings | Chemical mechanical polishing composition and method of polishing silicon nitride over silicon dioxide and simultaneously inhibiting damage to silicon dioxide |
| US10787592B1 (en) * | 2019-05-16 | 2020-09-29 | Rohm And Haas Electronic Materials Cmp Holdings, I | Chemical mechanical polishing compositions and methods having enhanced defect inhibition and selectively polishing silicon nitride over silicon dioxide in an acid environment |
| KR102525287B1 (en) | 2019-10-18 | 2023-04-24 | 삼성에스디아이 주식회사 | Cmp slurry composition for polishing copper layer and method for polishing copper layer using the same |
| CN110788739A (en) * | 2019-10-31 | 2020-02-14 | 云南北方昆物光电科技发展有限公司 | Polishing method of indium antimonide single crystal wafer |
| WO2023180216A1 (en) * | 2022-03-22 | 2023-09-28 | Merck Patent Gmbh | Negatively charged silica particles, method of producing such particles, compositions comprising such particles, and a method of chemical-mechanical polishing using such particles |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3922393A (en) * | 1974-07-02 | 1975-11-25 | Du Pont | Process for polishing silicon and germanium semiconductor materials |
| US5387796A (en) * | 1993-05-26 | 1995-02-07 | Epitaxx, Inc. | Low leakage current photodetector arrays |
| US6627539B1 (en) * | 1998-05-29 | 2003-09-30 | Newport Fab, Llc | Method of forming dual-damascene interconnect structures employing low-k dielectric materials |
| EP1691401B1 (en) * | 1999-06-18 | 2012-06-13 | Hitachi Chemical Co., Ltd. | Method for polishing a substrate using CMP abrasive |
| US6776810B1 (en) * | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
| US20040175942A1 (en) | 2003-01-03 | 2004-09-09 | Chang Song Y. | Composition and method used for chemical mechanical planarization of metals |
| US7022255B2 (en) | 2003-10-10 | 2006-04-04 | Dupont Air Products Nanomaterials Llc | Chemical-mechanical planarization composition with nitrogen containing polymer and method for use |
| US20070037892A1 (en) | 2004-09-08 | 2007-02-15 | Irina Belov | Aqueous slurry containing metallate-modified silica particles |
| US20070049164A1 (en) * | 2005-08-26 | 2007-03-01 | Thomson Clifford O | Polishing pad and method for manufacturing polishing pads |
| JP2007103463A (en) | 2005-09-30 | 2007-04-19 | Sumitomo Electric Ind Ltd | POLISHING SLURRY, SURFACE TREATMENT METHOD OF GaxIn1-xAsyP1-y CRYSTAL, AND GaxIn1-xAsyP1-y CRYSTAL SUBSTRATE |
| EP1813656A3 (en) * | 2006-01-30 | 2009-09-02 | FUJIFILM Corporation | Metal-polishing liquid and chemical mechanical polishing method using the same |
| US20100130013A1 (en) * | 2008-11-24 | 2010-05-27 | Applied Materials, Inc. | Slurry composition for gst phase change memory materials polishing |
| JP2010269985A (en) | 2009-05-22 | 2010-12-02 | Fuso Chemical Co Ltd | Sulfonic acid-modified aqueous anionic silica sol and method for producing the same |
| EP2533274B1 (en) | 2010-02-01 | 2014-07-30 | JSR Corporation | Aqueous dispersion for chemical mechanical polishing, and chemical mechanical polishing method using same |
| US8790160B2 (en) * | 2011-04-28 | 2014-07-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for polishing phase change alloys |
| JP2013080751A (en) * | 2011-09-30 | 2013-05-02 | Fujimi Inc | Polishing composition |
| US8778211B2 (en) * | 2012-07-17 | 2014-07-15 | Cabot Microelectronics Corporation | GST CMP slurries |
-
2014
- 2014-05-06 US US14/890,754 patent/US9765239B2/en not_active Expired - Fee Related
- 2014-05-06 CN CN201480027213.1A patent/CN105209563A/en active Pending
- 2014-05-06 EP EP14797473.7A patent/EP2997104A4/en not_active Withdrawn
- 2014-05-06 KR KR1020157035421A patent/KR20160009644A/en not_active Application Discontinuation
- 2014-05-06 SG SG11201509374WA patent/SG11201509374WA/en unknown
- 2014-05-06 JP JP2016513471A patent/JP2016524325A/en active Pending
- 2014-05-06 WO PCT/IB2014/061234 patent/WO2014184708A2/en active Application Filing
- 2014-05-13 TW TW103116801A patent/TW201504411A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014184708A2 (en) | 2014-11-20 |
| CN105209563A (en) | 2015-12-30 |
| JP2016524325A (en) | 2016-08-12 |
| US9765239B2 (en) | 2017-09-19 |
| US20160096979A1 (en) | 2016-04-07 |
| TW201504411A (en) | 2015-02-01 |
| WO2014184708A3 (en) | 2015-06-25 |
| KR20160009644A (en) | 2016-01-26 |
| EP2997104A2 (en) | 2016-03-23 |
| EP2997104A4 (en) | 2017-01-25 |
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