JP2018207103A - 基板処理装置及び集積回路素子製造装置 - Google Patents
基板処理装置及び集積回路素子製造装置 Download PDFInfo
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- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H—ELECTRICITY
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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Abstract
【解決手段】基板処理装置100は、基板Wを処理するための処理空間を提供するベッセル110、処理空間に搬入された基板を支持するための基板支持部130及びベッセルの側壁と、基板支持部との間に配置され、基板支持部に支持された基板のエッジを取り囲む遮断膜150を含む。
【選択図】図1A
Description
110 ベッセル
110U 上部ベッセル
110L 下部ベッセル
111 第1供給ポート
113 第2供給ポート
115 排気ポート
120 昇降部材
121 昇降シリンダ
123 昇降ロッド
130 基板支持部
140 流体供給部
141 排気部
150,150a 遮断膜
151,151a ガイドピン
160 遮断プレート
170 駆動装置
181,183 保護層
1000 集積回路素子製造装置
Claims (20)
- 基板を処理するための処理空間を含むベッセルと、
前記処理空間に搬入された前記基板を支持するように構成された基板支持部と、
前記ベッセルの側壁と、前記基板支持部との間に配置され、前記基板支持部を取り囲むように構成された遮断膜と、を含む基板処理装置。 - 前記遮断膜を接触支持するように、前記処理空間内に提供されたガイドピンをさらに含むことを特徴とする請求項1に記載の基板処理装置。
- 前記遮断膜は、前記基板支持部に支持された前記基板のエッジに沿って延長されたリング形態を有することを特徴とする請求項1に記載の基板処理装置。
- 前記ベッセルは、前記処理空間を密閉する閉鎖位置と、前記処理空間を開放する開放位置とを転換することができるように、相互開閉自在に結合される上部ベッセル及び下部ベッセルを含むことを特徴とする請求項1ないし3のうちの何れか一項に記載の基板処理装置。
- 前記基板支持部及び前記遮断膜は、前記上部ベッセルに結合され、
前記遮断膜は、前記上部ベッセルから、前記基板支持部に支持された基板より低い地点まで下方に延長されたことを特徴とする請求項4に記載の基板処理装置。 - 前記遮断膜は、その下部において、前記ベッセルの前記側壁から遠くなる内側に曲がった形状を有することを特徴とする請求項5に記載の基板処理装置。
- 前記ベッセルは、前記閉鎖位置において、前記上部ベッセル及び前記下部ベッセルが接触する接触部を有し、
前記接触部上に第1保護層をさらに含むことを特徴とする請求項4に記載の基板処理装置。 - 前記第1保護層は、前記接触部を構成する前記上部ベッセルの一部表面、及び前記接触部を構成する前記下部ベッセルの一部表面のうち少なくともいずれか一つに形成されたことを特徴とする請求項7に記載の基板処理装置。
- 前記ベッセルは、前記閉鎖位置と前記開放位置との間において、前記上部ベッセル及び前記下部ベッセルのうち少なくとも一つを案内するように、前記上部ベッセル及び前記下部ベッセルに結合された昇降ロッドを含み、
前記昇降ロッド上に第2保護層をさらに含むことを特徴とする請求項4に記載の基板処理装置。 - 前記ベッセルは、
前記ベッセル内に超臨界流体を供給するために、前記下部ベッセルに形成された第1供給ポートと、
前記ベッセル内に超臨界流体を供給するために、前記上部ベッセルに形成された第2供給ポートと、
前記ベッセル内部から流体を排出するために、前記下部ベッセルに形成された排気ポートと、を含むことを特徴とする請求項4に記載の基板処理装置。 - 基板を処理するための処理空間を含む少なくとも1つのベッセルであって、前記処理空間を密閉する閉鎖位置と、前記処理空間を開放する開放位置とを転換することができるように、相互開閉自在に結合される上部ベッセル及び下部ベッセルを含む前記少なくとも1つのベッセルと、
前記少なくとも1つのベッセルの上部壁に結合され、前記処理空間に搬入された前記基板を支持するように構成された基板支持部と、
前記少なくとも1つのベッセルの前記上部壁に結合され、前記少なくとも1つのベッセルの側壁と、前記基板支持部との間に配置された遮断膜と、
前記少なくとも1つのベッセルの内部から流体を排出するために、前記少なくとも1つのベッセルの底壁に形成された排気ポートと、を含み、
前記遮断膜は、前記少なくとも1つのベッセルの前記側壁に沿って下方に延長され、
前記遮断膜は、前記ベッセルの閉鎖位置において、前記ベッセルの前記上部壁から、前記基板支持部より低い地点まで延長された基板処理装置。 - 前記閉鎖位置または前記開放位置に、前記上部ベッセル及び前記下部ベッセルのうち少なくとも一つを移動させるための駆動装置をさらに含むことを特徴とする請求項11に記載の基板処理装置。
- 前記少なくとも1つのベッセルは、並列式に配列された複数個のベッセルを含み、
前記駆動装置は、前記複数個のベッセルそれぞれに連結されたことを特徴とする請求項12に記載の基板処理装置。 - 前記少なくとも1つのベッセルは、互いに積層された複数個のベッセルを含み、
前記駆動装置は、前記複数個のベッセルそれぞれに連結されたことを特徴とする請求項12に記載の基板処理装置。 - 前記少なくとも1つのベッセル内部に提供され、前記閉鎖位置において、前記遮断膜の側部または下部を接触及び支持するためのガイドピンをさらに含むことを特徴とする請求項11ないし14のうちの何れか一項に記載の基板処理装置。
- 前記少なくとも1つのベッセルは、
前記閉鎖位置において、前記上部ベッセルと前記下部ベッセルとが接触する接触部と、
前記閉鎖位置と前記開放位置との間において、前記上部ベッセル及び前記下部ベッセルのうち少なくとも一つを案内するように、前記上部ベッセル及び前記下部ベッセルに結合された昇降ロッドと、を有し、
前記接触部上の第1保護層、及び前記昇降ロッド上の第2保護層をさらに含むことを特徴とする請求項11ないし15のうちの何れか一項に記載の基板処理装置。 - 基板を洗浄するための洗浄ユニットと、
前記洗浄された基板を乾燥させるための乾燥チャンバを含む乾燥ユニットと、を含み、
前記乾燥チャンバは、
前記洗浄された基板を処理するための処理空間を含み、前記処理空間を密閉する閉鎖位置と、前記処理空間を開放する開放位置とを転換することができるように、相互開閉自在に結合される上部ベッセル及び下部ベッセルを含むベッセルと、
前記上部ベッセルに結合され、前記処理空間に搬入された前記基板を支持するように構成された基板支持部と、
前記基板支持部に支持された前記基板のエッジを取り囲むように、前記上部ベッセルに結合された遮断膜と、
前記閉鎖位置または前記開放位置に、前記上部ベッセル及び前記下部ベッセルのうち少なくとも一つを移動させるように構成された駆動装置と、を含む集積回路素子製造装置。 - 前記ベッセルは、前記閉鎖位置において、前記上部ベッセル及び前記下部ベッセルが接触する接触部を有し、
前記接触部を構成する前記上部ベッセルの一部表面、及び前記接触部を構成する前記下部ベッセルの一部表面のうち少なくともいずれか一つの上に形成された保護層をさらに含むことを特徴とする請求項17に記載の集積回路素子製造装置。 - 前記遮断膜は、前記上部ベッセルの下面から、前記下部ベッセルの側壁に沿って下方に延長されていることを特徴とする請求項17または18に記載の集積回路素子製造装置。
- 前記乾燥チャンバは、複数個のベッセルを含み、
前記駆動装置は、前記複数個のベッセルに連結され、前記複数個のベッセルの前記閉鎖位置及び前記開放位置の転換をそれぞれ制御することを特徴とする請求項17ないし19のうちの何れか一項に記載の集積回路素子製造装置。
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JP2022092615A (ja) * | 2020-12-10 | 2022-06-22 | セメス カンパニー,リミテッド | 基板処理装置及びこれに提供されるフィラー部材 |
JP2022105280A (ja) * | 2020-12-31 | 2022-07-13 | セメス カンパニー,リミテッド | 基板処理装置 |
JP2022153262A (ja) * | 2021-03-29 | 2022-10-12 | サムス カンパニー リミテッド | 基板処理装置 |
JP7347802B2 (ja) | 2020-01-29 | 2023-09-20 | 株式会社レクザム | ウェハ処理装置 |
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JP7353213B2 (ja) * | 2020-02-28 | 2023-09-29 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
US11515178B2 (en) * | 2020-03-16 | 2022-11-29 | Tokyo Electron Limited | System and methods for wafer drying |
KR102383007B1 (ko) * | 2020-06-01 | 2022-04-05 | 무진전자 주식회사 | 기판 건조 챔버 |
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DE102018102592A1 (de) | 2018-12-13 |
US20180358242A1 (en) | 2018-12-13 |
KR20180134179A (ko) | 2018-12-18 |
US10985036B2 (en) | 2021-04-20 |
CN109037094A (zh) | 2018-12-18 |
DE102018102592B4 (de) | 2024-05-02 |
KR102358561B1 (ko) | 2022-02-04 |
JP7158177B2 (ja) | 2022-10-21 |
US20210217635A1 (en) | 2021-07-15 |
US11887868B2 (en) | 2024-01-30 |
CN109037094B (zh) | 2023-07-25 |
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