JP2018206378A - 書き換え可能なインプレースメモリを有するデータ記憶装置 - Google Patents
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- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
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Abstract
【解決手段】データ記憶装置220は、少なくともバッファメモリ228、選択モジュール234、及び不揮発性メモリ232を有する。バッファメモリ及び不揮発性メモリは、異なる種類のメモリからなってもよく、不揮発性メモリは、1つ又は複数の書き換え可能なインプレースメモリセルを有する。バッファメモリ及び不揮発性メモリは、それぞれ、再書き込み可能なインプレースメモリセルの整定時間が満了するまで、選択モジュールによって指示される保留データ要求に関連するデータを記憶することができる。
【選択図】図5B
Description
Claims (20)
- バッファメモリ、選択モジュール、及び不揮発性メモリを有するデータ記憶装置を備える装置であって、前記バッファメモリ並びに不揮発性メモリは異なるタイプのメモリを備え、前記不揮発性メモリは書き換え可能なインプレースメモリセルを備え、前記バッファメモリ並びに不揮発性メモリは、それぞれ、前記書き換え可能なインプレースメモリセルの整定時間が満了するまで、前記選択モジュールによって指示される保留データ要求に関連するデータを記憶する、装置。
- 前記データ記憶装置は、複数のビットアドレス指定可能なメモリセルを有する、請求項1に記載の装置。
- 前記複数のビットアドレス指定可能なメモリセルの各メモリセルは、ビット線とワード線との間に配置される、請求項2に記載の装置。
- 各ビット線は、各ワード線に直交するように配向される、請求項3に記載の装置。
- 前記複数のビットアドレス指定可能なメモリセルの第1のグループは、前記複数のビットアドレス指定可能なメモリセルの第2のグループの上に鉛直方向に積層される、請求項2に記載の装置。
- 前記複数のビットアドレス指定可能なメモリセルの各メモリセルは、抵抗ユニットと接触する選択層を含む、請求項2に記載の装置。
- 前記複数のビットアドレス指定可能なメモリセルのどのメモリセルもトランジスタに取り付けられていない、請求項2に記載の装置。
- 前記バッファメモリは揮発性である請求項1に記載の装置。
- 方法であって、
バッファメモリ、選択モジュール、及び不揮発性メモリを有するデータ記憶装置を活性化することであって、前記バッファメモリ並びに不揮発性メモリは異なるタイプのメモリを備え、前記不揮発性メモリは書き換え可能なインプレースメモリセルを備える、ことと、
書き込み要求をリモートホストから受信することであって、前記書き込み要求は、前記書き込み要求に関連する書き込みデータを有する、ことと、
前記選択モジュールによって指示されるように、前記書き込みデータを前記バッファメモリ並びに不揮発性メモリに同時に書き込むことと、
前記バッファメモリからデータを取り出すことによって前記書き込みデータに対する最初の読み出し要求をサービスすることと、
前記選択モジュールのタイマがアクティブである間、前記不揮発性メモリから前記書き込みデータを読み出すことを遅延させることであって、前記タイマは前記不揮発性メモリの整定時間に対応する、ことと、
前記タイマが満了した後に前記不揮発性メモリからデータを取り出すことによって、前記書き込みデータに対する2回目の読み出し要求をサービスすることと、
を含む、方法。 - 前記不揮発性メモリは、前記整定時間中に不安定である、請求項9に記載の方法。
- 前記整定時間は、前記選択モジュールの予測回路によって予測される、請求項9に記載の方法。
- 前記予測される整定時間は、デフォルト整定時間とは異なる、請求項11に記載の方法。
- 前記予測される整定時間は、前記データ記憶装置の高温に適応する、請求項11に記載の方法。
- 前記選択モジュールは、前記書き込みデータが書き込まれるメモリセルに物理的に近接する前記不揮発性メモリの少なくとも1つのメモリセルへのアクセスを制限する、請求項9に記載の方法。
- 方法であって、
バッファメモリ、選択モジュール、及び不揮発性メモリを有するデータ記憶装置を活性化することであって、前記バッファメモリ並びに不揮発性メモリは異なるタイプのメモリを備え、前記不揮発性メモリは書き換え可能なインプレースメモリセルを備える、ことと、
書き込み要求をリモートホストから受信することであって、前記書き込み要求は、前記書き込み要求に関連する書き込みデータを有する、ことと、
前記選択モジュールによって指示されるように、前記書き込みデータを前記バッファメモリ並びに不揮発性メモリに同時に書き込むことと、
前記バッファメモリからデータを取り出すことによって前記書き込みデータに対する最初の読み出し要求をサービスすることと、
前記選択モジュールのタイマがアクティブである間に前記書き込みデータを前記不揮発性メモリから読み出すことを遅延させることと、
前記タイマが満了した後に前記不揮発性メモリからデータを取り出すことによって、前記書き込みデータに対する2回目の読み出し要求をサービスすることと、
前記タイマの満了に応答して、前記バッファメモリから前記書き込みデータを削除することと、
を含む、方法。 - 前記選択モジュールは、前記タイマがアクティブである間、前記不揮発性メモリに書き込むことなく、前記バッファメモリ内の前記書き込みデータに更新を書き込む、請求項15に記載の方法。
- 前記選択モジュールは、前記バッファメモリ内の前記書き込みデータにフラグを立てることによって、データが現在書き込まれているかどうかを評価する、請求項15に記載の方法。
- 前記選択モジュールは、前記書き込みデータを第1のレベルマップ及び第2のレベルマップにマッピングする、請求項15に記載の方法。
- 前記第1のレベルマップは前記バッファメモリに常駐し、前記第2のレベルマップは前記不揮発性メモリに常駐する、請求項18に記載の方法。
- 前記選択モジュールは、前記バッファメモリに記憶されたシャドウマップを生成する、請求項18に記載の方法。
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US15/608,100 US10090067B1 (en) | 2017-05-30 | 2017-05-30 | Data storage device with rewritable in-place memory |
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US11048633B2 (en) * | 2016-09-27 | 2021-06-29 | Spin Memory, Inc. | Determining an inactive memory bank during an idle memory cycle to prevent error cache overflow |
US10090067B1 (en) * | 2017-05-30 | 2018-10-02 | Seagate Technology Llc | Data storage device with rewritable in-place memory |
US10684964B1 (en) * | 2018-08-01 | 2020-06-16 | Lightbits Labs Ltd. | System and method for reducing read latency in storage devices |
KR102460808B1 (ko) | 2018-10-31 | 2022-10-31 | 주식회사 엘지에너지솔루션 | 전해액 이온 농도 측정부를 포함하는 전지셀 및 이를 이용한 전해액 농도 측정 방법 |
US11475102B2 (en) * | 2019-02-21 | 2022-10-18 | Samsung Electronics Co., Ltd. | Adaptive matrix multiplication accelerator for machine learning and deep learning applications |
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-
2017
- 2017-05-30 US US15/608,100 patent/US10090067B1/en active Active
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2018
- 2018-05-29 JP JP2018102220A patent/JP2018206378A/ja active Pending
- 2018-05-30 CN CN201810537569.XA patent/CN108986859B/zh active Active
- 2018-05-30 KR KR1020180061867A patent/KR102095438B1/ko active IP Right Grant
- 2018-05-30 TW TW107118488A patent/TWI673722B/zh not_active IP Right Cessation
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US10090067B1 (en) | 2018-10-02 |
KR20180131467A (ko) | 2018-12-10 |
CN108986859B (zh) | 2022-04-19 |
TWI673722B (zh) | 2019-10-01 |
US20190096506A1 (en) | 2019-03-28 |
CN108986859A (zh) | 2018-12-11 |
TW201905914A (zh) | 2019-02-01 |
KR102095438B1 (ko) | 2020-03-31 |
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