JP2018182258A - 半導体装置及びその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 103
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000012535 impurity Substances 0.000 claims abstract description 68
- 239000007772 electrode material Substances 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 148
- 238000005468 ion implantation Methods 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 108091006146 Channels Proteins 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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Abstract
Description
図2は、図1におけるA−A断面図である。
Claims (5)
- 第1電極と、
前記第1電極上に設けられた第1導電形の第1半導体層と、
前記第1半導体層上に設けられた第2導電形の第2半導体層と、
前記第2半導体層上に設けられた第1導電形の第3半導体層と、
前記第3半導体層に接する第2電極と、
前記第3半導体層の側面に対向するゲート電極と、
前記第3半導体層の前記側面と前記ゲート電極との間に設けられた第1絶縁膜と、
前記ゲート電極の下に設けられたフィールドプレート電極であって、前記ゲート電極側に設けられた上部と、前記上部よりも前記第1電極側に設けられ、前記上部よりも幅が小さい下部と、を有するフィールドプレート電極と、
前記第1半導体層と前記フィールドプレート電極との間に設けられた第2絶縁膜であって、前記フィールドプレート電極の前記上部と前記第1半導体層との間に設けられた第1部分と、前記フィールドプレート電極の前記下部と前記第1半導体層との間に設けられ、前記第1部分よりも膜厚が厚い第2部分と、を有する第2絶縁膜と、
を備え、
前記第1半導体層は、
第1領域と、
前記第1領域と前記第2絶縁膜の側壁との間における前記第2絶縁膜の前記側壁に近接する領域に設けられ、前記第1領域よりも第1導電形不純物濃度が高い第2領域と、
を有する半導体装置。 - 前記第2絶縁膜の前記側壁は、前記第1電極と前記第2電極とを結ぶ方向に沿った階段状の段差をもつ請求項1記載の半導体装置。
- 前記第1半導体層の前記第2領域における前記第2絶縁膜の前記第1部分に近接する領域の第1導電形不純物濃度は、前記第1半導体層の前記第2領域における前記第2絶縁膜の前記第2部分に近接する領域の第1導電形不純物濃度よりも低い請求項1または2に記載の半導体装置。
- 前記第1半導体層は、
前記第2絶縁膜のボトムに近接する領域に設けられ、前記第1領域よりも第1導電形不純物濃度が高い第3領域をさらに有する請求項1〜3のいずれか1つに記載の半導体装置。 - 半導体層にトレンチを形成する工程であって、前記トレンチの幅は深さ方向に向かって段階的に小さくなり、段差をもつ側壁を有するトレンチを形成する工程と、
前記半導体層における前記トレンチの前記側壁に近接する領域に不純物を注入し、前記半導体層の前記領域に、深さ方向に向かって段階的に不純物濃度が高くなる濃度勾配をもたせる工程と、
前記半導体層における前記不純物が注入された領域を熱酸化し、前記トレンチの前記側壁に、深さ方向に向かって段階的に膜厚が厚くなる絶縁膜を形成する工程と、
前記トレンチ内における前記絶縁膜の内側に、電極材を形成する工程と、
を備えた半導体装置の製造方法。
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Cited By (4)
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US11139395B2 (en) | 2019-09-13 | 2021-10-05 | Kabushiki Kaisha Toshiba | Semiconductor device |
US11362210B2 (en) | 2020-07-30 | 2022-06-14 | Kabushiki Kaisha Toshiba | Semiconductor device |
US11715773B2 (en) | 2021-03-17 | 2023-08-01 | Kabushiki Kaisha Toshiba | Semiconductor device |
US12027618B2 (en) | 2020-11-02 | 2024-07-02 | Kabushiki Kaisha Toshiba | Semiconductor device |
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US11189702B2 (en) * | 2019-01-30 | 2021-11-30 | Vishay SIliconix, LLC | Split gate semiconductor with non-uniform trench oxide |
CN112736123A (zh) * | 2019-10-28 | 2021-04-30 | 苏州东微半导体股份有限公司 | 半导体功率器件终端结构 |
US20230010328A1 (en) * | 2021-07-06 | 2023-01-12 | Nami MOS CO., LTD. | Shielded gate trench mosfet with multiple stepped epitaxial structures |
CN118099141A (zh) * | 2022-11-17 | 2024-05-28 | 长鑫存储技术有限公司 | 半导体结构及其制造方法 |
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JP2008546216A (ja) * | 2005-06-10 | 2008-12-18 | フェアチャイルド・セミコンダクター・コーポレーション | 電荷平衡電界効果トランジスタ |
JP2016072482A (ja) * | 2014-09-30 | 2016-05-09 | 株式会社東芝 | 半導体装置およびその製造方法 |
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US8765609B2 (en) | 2012-07-25 | 2014-07-01 | Power Integrations, Inc. | Deposit/etch for tapered oxide |
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JP2008546216A (ja) * | 2005-06-10 | 2008-12-18 | フェアチャイルド・セミコンダクター・コーポレーション | 電荷平衡電界効果トランジスタ |
JP2016072482A (ja) * | 2014-09-30 | 2016-05-09 | 株式会社東芝 | 半導体装置およびその製造方法 |
Cited By (5)
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US11139395B2 (en) | 2019-09-13 | 2021-10-05 | Kabushiki Kaisha Toshiba | Semiconductor device |
US11362210B2 (en) | 2020-07-30 | 2022-06-14 | Kabushiki Kaisha Toshiba | Semiconductor device |
US11791408B2 (en) | 2020-07-30 | 2023-10-17 | Kabushiki Kaisha Toshiba | Semiconductor device |
US12027618B2 (en) | 2020-11-02 | 2024-07-02 | Kabushiki Kaisha Toshiba | Semiconductor device |
US11715773B2 (en) | 2021-03-17 | 2023-08-01 | Kabushiki Kaisha Toshiba | Semiconductor device |
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