JP2018170491A5 - - Google Patents

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Publication number
JP2018170491A5
JP2018170491A5 JP2017213440A JP2017213440A JP2018170491A5 JP 2018170491 A5 JP2018170491 A5 JP 2018170491A5 JP 2017213440 A JP2017213440 A JP 2017213440A JP 2017213440 A JP2017213440 A JP 2017213440A JP 2018170491 A5 JP2018170491 A5 JP 2018170491A5
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JP
Japan
Prior art keywords
substrate
providing
nitride layer
group iii
epitaxial
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Pending
Application number
JP2017213440A
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English (en)
Japanese (ja)
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JP2018170491A (ja
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Publication date
Priority claimed from US15/363,050 external-priority patent/US10249786B2/en
Application filed filed Critical
Publication of JP2018170491A publication Critical patent/JP2018170491A/ja
Publication of JP2018170491A5 publication Critical patent/JP2018170491A5/ja
Priority to JP2021179394A priority Critical patent/JP7216790B2/ja
Pending legal-status Critical Current

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JP2017213440A 2016-11-29 2017-11-06 薄膜および基板除去ｉｉｉ族窒化物ベースのデバイスおよび方法 Pending JP2018170491A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2021179394A JP7216790B2 (ja) 2016-11-29 2021-11-02 薄膜および基板除去ｉｉｉ族窒化物ベースのデバイスおよび方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/363,050 US10249786B2 (en) 2016-11-29 2016-11-29 Thin film and substrate-removed group III-nitride based devices and method
US15/363,050 2016-11-29

Related Child Applications (1)

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JP2021179394A Division JP7216790B2 (ja) 2016-11-29 2021-11-02 薄膜および基板除去ｉｉｉ族窒化物ベースのデバイスおよび方法

Publications (2)

Publication Number Publication Date
JP2018170491A JP2018170491A (ja) 2018-11-01
JP2018170491A5 true JP2018170491A5 (cg-RX-API-DMAC7.html) 2021-03-11

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JP2017213440A Pending JP2018170491A (ja) 2016-11-29 2017-11-06 薄膜および基板除去ｉｉｉ族窒化物ベースのデバイスおよび方法
JP2021179394A Active JP7216790B2 (ja) 2016-11-29 2021-11-02 薄膜および基板除去ｉｉｉ族窒化物ベースのデバイスおよび方法

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JP2021179394A Active JP7216790B2 (ja) 2016-11-29 2021-11-02 薄膜および基板除去ｉｉｉ族窒化物ベースのデバイスおよび方法

Country Status (3)

Country Link
US (1) US10249786B2 (cg-RX-API-DMAC7.html)
EP (1) EP3327795B1 (cg-RX-API-DMAC7.html)
JP (2) JP2018170491A (cg-RX-API-DMAC7.html)

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FR3061357B1 (fr) * 2016-12-27 2019-05-24 Aledia Procede de realisation d’un dispositif optoelectronique comportant une etape de gravure de la face arriere du substrat de croissance
WO2020054764A1 (ja) 2018-09-12 2020-03-19 Ｎｓマテリアルズ株式会社 赤外線センサ及びその製造方法
US10896861B2 (en) * 2019-04-22 2021-01-19 Raytheon Company Heterogeneous multi-layer MMIC assembly

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US6488767B1 (en) * 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
CA2467806C (en) * 2001-11-20 2011-04-19 Rensselaer Polytechnic Institute Method for polishing a substrate surface
JP2004200347A (ja) 2002-12-18 2004-07-15 Sumitomo Electric Ind Ltd 高放熱性能を持つ発光ダイオード
US7328830B2 (en) * 2002-12-20 2008-02-12 Agere Systems Inc. Structure and method for bonding to copper interconnect structures
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US20060288929A1 (en) * 2005-06-10 2006-12-28 Crystal Is, Inc. Polar surface preparation of nitride substrates
JP5003033B2 (ja) * 2006-06-30 2012-08-15 住友電気工業株式会社 ＧａＮ薄膜貼り合わせ基板およびその製造方法、ならびにＧａＮ系半導体デバイスおよびその製造方法
WO2008060505A1 (en) 2006-11-15 2008-05-22 Cabot Microelectronics Corporation Methods for polishing aluminum nitride
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US9136337B2 (en) * 2012-10-12 2015-09-15 Sumitomo Electric Industries, Ltd. Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same
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WO2014125688A1 (ja) * 2013-02-18 2014-08-21 住友電気工業株式会社 Ｉｉｉ族窒化物複合基板およびその製造方法、積層ｉｉｉ族窒化物複合基板、ならびにｉｉｉ族窒化物半導体デバイスおよびその製造方法
JP2015179734A (ja) 2014-03-19 2015-10-08 旭化成株式会社 半導体発光装置の製造方法および半導体発光装置

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