JP2018157670A - 半導体素子の駆動装置 - Google Patents
半導体素子の駆動装置 Download PDFInfo
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- JP2018157670A JP2018157670A JP2017051971A JP2017051971A JP2018157670A JP 2018157670 A JP2018157670 A JP 2018157670A JP 2017051971 A JP2017051971 A JP 2017051971A JP 2017051971 A JP2017051971 A JP 2017051971A JP 2018157670 A JP2018157670 A JP 2018157670A
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- Prior art keywords
- semiconductor element
- drive
- circuit
- driving
- igbt
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
Abstract
Description
特に前記保護回路は、前記駆動回路が前記半導体素子に与える駆動制御電圧に応じた電圧レベルの駆動情報を外部出力する駆動情報出力回路を備えたことを特徴としている。
2 IPM
3 IGBT(半導体素子)
4 制御IC
5 PWM信号生成回路
6 PWM信号デューティ設定部
7a,7b フォトカプラ
8 温度検出用のダイオード
9 検出回路
11 過熱検出用比較器
12 ロジック回路
13 抵抗分圧回路
14a,14b,14b スイッチ素子
15 IGBT駆動回路
16a,16b,16c 表示器(LED)
17 駆動情報出力回路
18 駆動情報出力用のMOS-FET
21 比較器
22 アンド回路
23 パルス幅生成回路
24,25 カレントミラー回路
26 コンデンサ
27 反転回路
28 比較器
31,32,37,38,39 n型FET
34,35,36 p型FET
Claims (5)
- 半導体素子の駆動能力を規定するパルス状の駆動信号を外部から入力して前記半導体素子をオン・オフ駆動する駆動回路を有し、前記半導体素子のチップ温度を検出し、検出したチップ温度が過熱閾値温度を超えたときに前記駆動回路の動作を制御して前記半導体素子の駆動能力を切換える保護回路を具備した半導体素子の駆動装置であって、
前記保護回路は、更に前記駆動回路が前記半導体素子に与える駆動制御電圧に応じた電圧レベルの駆動情報を外部出力する駆動情報出力回路を備えたことを特徴とする半導体素子の駆動装置。 - 前記駆動情報出力回路は、前記駆動情報の電圧レベルを前記駆動制御電圧に応じて制御する電圧レベル制御回路に加えて、前記駆動制御電圧に応じたパルス幅のパルス信号を生成して外部出力するパルス幅生成回路を備えている請求項1に記載の半導体素子の駆動装置。
- 前記パルス幅生成回路は、前記駆動情報の電圧レベルと前記半導体素子のオン幅を規定するパルス幅との積が前記半導体素子の駆動能力を規定する情報となるパルス信号を駆動情報出力信号として生成するものである請求項1に記載の半導体素子の駆動装置。
- 前記半導体素子はIGBTであって、前記半導体素子の駆動能力の切換えは前記IGBTのチップ温度に応じて該IGBTのゲートへの充電電流を切換えることにより行われる請求項1に記載の半導体素子の駆動装置。
- 前記保護回路は、前記半導体素子のチップ温度に応じて前記半導体素子に加えるゲート電圧を変更して該半導体素子の駆動能力を切換えるものであって、
前記保護回路は、前記半導体素子に加えるゲート電圧に応じて表示形態が変更される表示器を備えている請求項1に記載の半導体素子の駆動装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017051971A JP6965537B2 (ja) | 2017-03-16 | 2017-03-16 | 半導体素子の駆動装置 |
CN201810136035.6A CN108631559B (zh) | 2017-03-16 | 2018-02-09 | 半导体元件的驱动装置 |
US15/918,727 US10944393B2 (en) | 2017-03-16 | 2018-03-12 | Drive device for semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017051971A JP6965537B2 (ja) | 2017-03-16 | 2017-03-16 | 半導体素子の駆動装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018157670A true JP2018157670A (ja) | 2018-10-04 |
JP6965537B2 JP6965537B2 (ja) | 2021-11-10 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2017051971A Active JP6965537B2 (ja) | 2017-03-16 | 2017-03-16 | 半導体素子の駆動装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10944393B2 (ja) |
JP (1) | JP6965537B2 (ja) |
CN (1) | CN108631559B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020183966A1 (ja) * | 2019-03-14 | 2020-09-17 | 富士電機株式会社 | パワーモジュールおよびそのレベル変換回路 |
US11539349B1 (en) | 2021-06-30 | 2022-12-27 | Fuji Electric Co., Ltd. | Integrated circuit and power module |
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US10611246B2 (en) * | 2017-03-29 | 2020-04-07 | Ford Global Technologies, Llc | Gate driver with temperature compensated turn-off |
CN111446511B (zh) * | 2019-01-17 | 2021-09-03 | 太普动力新能源(常熟)股份有限公司 | 电池及对其电芯进行充电的方法 |
JP7445015B2 (ja) | 2019-12-15 | 2024-03-06 | シャヒーン イノベーションズ ホールディング リミテッド | 超音波ミスト吸入器 |
US11666713B2 (en) | 2019-12-15 | 2023-06-06 | Shaheen Innovations Holding Limited | Mist inhaler devices |
RS63694B1 (sr) | 2019-12-15 | 2022-11-30 | Shaheen Innovations Holding Ltd | Inhalatori |
JP7480338B2 (ja) | 2019-12-15 | 2024-05-09 | シャヒーン イノベーションズ ホールディング リミテッド | 超音波ミスト吸入器 |
US11730191B2 (en) | 2019-12-15 | 2023-08-22 | Shaheen Innovations Holding Limited | Hookah device |
KR20220141281A (ko) | 2019-12-15 | 2022-10-19 | 샤힌 이노베이션즈 홀딩 리미티드 | 초음파 미스트 흡입장치 |
US11589610B2 (en) | 2019-12-15 | 2023-02-28 | Shaheen Innovations Holding Limited | Nicotine delivery device having a mist generator device and a driver device |
US11730193B2 (en) | 2019-12-15 | 2023-08-22 | Shaheen Innovations Holding Limited | Hookah device |
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JP2005269832A (ja) * | 2004-03-19 | 2005-09-29 | Nissan Motor Co Ltd | 温度検出装置および温度検出用プログラム |
US20070013361A1 (en) * | 2005-06-30 | 2007-01-18 | Stmicroelectronics, Inc. | Semiconductor device having an integrated, self-regulated PWM current and power limiter and method |
JP2007259576A (ja) * | 2006-03-23 | 2007-10-04 | Hitachi Ltd | スイッチング素子の駆動回路 |
JP2007288999A (ja) * | 2007-08-08 | 2007-11-01 | Mitsubishi Electric Corp | 電力変換装置 |
JP2008236994A (ja) * | 2007-03-23 | 2008-10-02 | Toshiba Mitsubishi-Electric Industrial System Corp | 半導体電力変換装置の故障検出装置 |
JP2014103820A (ja) * | 2012-11-22 | 2014-06-05 | Fuji Electric Co Ltd | 半導体素子の駆動装置 |
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CN101841231B (zh) * | 2010-06-22 | 2012-03-28 | 华中科技大学 | 一种电机控制系统中的ipm驱动和保护方法 |
CN102893525B (zh) * | 2011-05-19 | 2013-12-25 | 丰田自动车株式会社 | 对电压驱动型元件进行驱动的驱动装置 |
JP5862434B2 (ja) | 2012-04-10 | 2016-02-16 | 富士電機株式会社 | パワートランジスタの駆動回路 |
JP6007605B2 (ja) | 2012-06-13 | 2016-10-12 | 富士電機株式会社 | 半導体素子の駆動装置 |
-
2017
- 2017-03-16 JP JP2017051971A patent/JP6965537B2/ja active Active
-
2018
- 2018-02-09 CN CN201810136035.6A patent/CN108631559B/zh active Active
- 2018-03-12 US US15/918,727 patent/US10944393B2/en active Active
Patent Citations (8)
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JP2007259576A (ja) * | 2006-03-23 | 2007-10-04 | Hitachi Ltd | スイッチング素子の駆動回路 |
JP2008236994A (ja) * | 2007-03-23 | 2008-10-02 | Toshiba Mitsubishi-Electric Industrial System Corp | 半導体電力変換装置の故障検出装置 |
JP2007288999A (ja) * | 2007-08-08 | 2007-11-01 | Mitsubishi Electric Corp | 電力変換装置 |
JP2014103820A (ja) * | 2012-11-22 | 2014-06-05 | Fuji Electric Co Ltd | 半導体素子の駆動装置 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2020183966A1 (ja) * | 2019-03-14 | 2020-09-17 | 富士電機株式会社 | パワーモジュールおよびそのレベル変換回路 |
JPWO2020183966A1 (ja) * | 2019-03-14 | 2021-10-14 | 富士電機株式会社 | パワーモジュールおよびそのレベル変換回路 |
JP7143933B2 (ja) | 2019-03-14 | 2022-09-29 | 富士電機株式会社 | パワーモジュール |
US11539349B1 (en) | 2021-06-30 | 2022-12-27 | Fuji Electric Co., Ltd. | Integrated circuit and power module |
Also Published As
Publication number | Publication date |
---|---|
US20180269867A1 (en) | 2018-09-20 |
US10944393B2 (en) | 2021-03-09 |
CN108631559B (zh) | 2022-02-25 |
JP6965537B2 (ja) | 2021-11-10 |
CN108631559A (zh) | 2018-10-09 |
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