JP2018142441A - 有機el表示装置、及び有機el表示装置の製造方法 - Google Patents
有機el表示装置、及び有機el表示装置の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000007789 sealing Methods 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 238000002161 passivation Methods 0.000 claims abstract description 28
- 239000011368 organic material Substances 0.000 claims abstract description 17
- 239000000203 mixture Substances 0.000 claims abstract description 11
- 230000000903 blocking effect Effects 0.000 claims description 51
- 239000010409 thin film Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 239000000463 material Substances 0.000 abstract description 17
- 230000007797 corrosion Effects 0.000 abstract description 5
- 238000005260 corrosion Methods 0.000 abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 138
- 239000010408 film Substances 0.000 description 29
- 238000005401 electroluminescence Methods 0.000 description 20
- 230000002093 peripheral effect Effects 0.000 description 16
- 239000004020 conductor Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 4
- 239000012044 organic layer Substances 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- -1 IZO Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004304 SiNy Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
Abstract
【解決手段】有機EL表示装置は、基材上に、回路層と、パッシベーション層と、表示領域の画素毎に形成された下部電極と、下部電極に接する有機材料層と、有機材料層を覆う上部電極と、基材上全体を覆う封止層と、を有する薄膜トランジスタ基板、を含み、薄膜トランジスタ基板は、表示領域と、表示領域を囲む水分遮断領域と、を有し、水分遮断領域は、回路層と、パッシベーション層と、水分遮断層と、封止層と、がこの順で積層されており、水分遮断層は封止層とは組成が異なっている。
【選択図】図3
Description
Claims (4)
- 基材上に、回路層と、パッシベーション層と、表示領域の画素毎に形成された下部電極と、前記下部電極に接する有機材料層と、前記有機材料層を覆う上部電極と、前記基材上全体を覆う封止層と、を有する薄膜トランジスタ基板、を含み、
前記薄膜トランジスタ基板は、前記表示領域と、前記表示領域を囲む水分遮断領域と、を有し、
前記水分遮断領域は、前記回路層と、前記パッシベーション層と、水分遮断層と、前記封止層と、がこの順で積層されており、
前記水分遮断層は前記封止層とは組成が異なっている、
ことを特徴とする有機EL表示装置。 - 前記水分遮断層は、前記封止層よりエッチング速度が遅い、
ことを特徴とする請求項1に記載の有機EL表示装置。 - 前記封止層はSiNにより形成されており、
前記水分遮断層はSiOまたはSiONにより形成されている、
ことを特徴とする請求項1または2に記載の有機EL表示装置。 - 薄膜トランジスタ基板の基材上に回路層を形成すること、
前記回路層の上にパッシベーション層を形成すること、
表示領域を囲む水分遮断領域において、前記パッシベーション層の上に水分遮断層を形成すること、
前記基材上全体を覆うように封止層を形成すること、
を含む、有機EL表示装置の製造方法であって、
前記水分遮断層は前記封止層とは組成が異なっている、
ことを特徴とする有機EL表示装置の製造方法。
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JP2017035290A JP6818590B2 (ja) | 2017-02-27 | 2017-02-27 | 有機el表示装置、及び有機el表示装置の製造方法 |
US15/890,752 US10340478B2 (en) | 2017-02-27 | 2018-02-07 | Organic EL display device and method of manufacturing an organic EL display device |
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JP2017035290A JP6818590B2 (ja) | 2017-02-27 | 2017-02-27 | 有機el表示装置、及び有機el表示装置の製造方法 |
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JP2018142441A true JP2018142441A (ja) | 2018-09-13 |
JP6818590B2 JP6818590B2 (ja) | 2021-01-20 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007073355A (ja) * | 2005-09-07 | 2007-03-22 | Toyota Industries Corp | 有機エレクトロルミネッセンス素子の製造方法 |
JP2011210544A (ja) * | 2010-03-30 | 2011-10-20 | Canon Inc | 有機発光装置及びその製造方法 |
JP2013131339A (ja) * | 2011-12-20 | 2013-07-04 | Canon Inc | 有機発光装置及びその製造方法 |
Family Cites Families (6)
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KR101994227B1 (ko) * | 2012-12-07 | 2019-09-30 | 엘지디스플레이 주식회사 | 유기전계 발광소자 및 그 제조방법 |
JP6391917B2 (ja) * | 2013-07-03 | 2018-09-19 | 株式会社ジャパンディスプレイ | 発光素子表示装置及びその製造方法 |
JP6133173B2 (ja) * | 2013-08-29 | 2017-05-24 | 株式会社ジャパンディスプレイ | 有機エレクトロルミネッセンス表示装置 |
JP2017174553A (ja) * | 2016-03-22 | 2017-09-28 | 株式会社ジャパンディスプレイ | 表示装置 |
JP6609495B2 (ja) * | 2016-03-28 | 2019-11-20 | 株式会社ジャパンディスプレイ | 表示装置及び表示装置の製造方法 |
JP2017224508A (ja) * | 2016-06-16 | 2017-12-21 | 株式会社ジャパンディスプレイ | 表示装置 |
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- 2017-02-27 JP JP2017035290A patent/JP6818590B2/ja active Active
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2007073355A (ja) * | 2005-09-07 | 2007-03-22 | Toyota Industries Corp | 有機エレクトロルミネッセンス素子の製造方法 |
JP2011210544A (ja) * | 2010-03-30 | 2011-10-20 | Canon Inc | 有機発光装置及びその製造方法 |
JP2013131339A (ja) * | 2011-12-20 | 2013-07-04 | Canon Inc | 有機発光装置及びその製造方法 |
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US20180248151A1 (en) | 2018-08-30 |
US10340478B2 (en) | 2019-07-02 |
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