JP2018137376A5 - - Google Patents
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- JP2018137376A5 JP2018137376A5 JP2017031791A JP2017031791A JP2018137376A5 JP 2018137376 A5 JP2018137376 A5 JP 2018137376A5 JP 2017031791 A JP2017031791 A JP 2017031791A JP 2017031791 A JP2017031791 A JP 2017031791A JP 2018137376 A5 JP2018137376 A5 JP 2018137376A5
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- 239000004065 semiconductor Substances 0.000 claims description 81
- 239000002390 adhesive tape Substances 0.000 claims description 31
- 239000000853 adhesive Substances 0.000 claims description 24
- 230000001070 adhesive Effects 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 24
- BZHJMEDXRYGGRV-UHFFFAOYSA-N vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 claims description 13
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims description 9
- 239000003999 initiator Substances 0.000 claims description 6
- 230000001678 irradiating Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
- PCKZAVNWRLEHIP-UHFFFAOYSA-N 2-hydroxy-1-[4-[[4-(2-hydroxy-2-methylpropanoyl)phenyl]methyl]phenyl]-2-methylpropan-1-one Chemical group C1=CC(C(=O)C(C)(O)C)=CC=C1CC1=CC=C(C(=O)C(C)(C)O)C=C1 PCKZAVNWRLEHIP-UHFFFAOYSA-N 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 claims description 2
- TUCNEACPLKLKNU-UHFFFAOYSA-N ethanone Chemical compound C[C]=O TUCNEACPLKLKNU-UHFFFAOYSA-N 0.000 claims description 2
- 238000007689 inspection Methods 0.000 claims description 2
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 claims 1
- 239000012298 atmosphere Substances 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- NNAHKQUHXJHBIV-UHFFFAOYSA-N 2-methyl-1-(4-methylthiophen-2-yl)-2-morpholin-4-ylpropan-1-one Chemical compound CC1=CSC(C(=O)C(C)(C)N2CCOCC2)=C1 NNAHKQUHXJHBIV-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
Description
本発明は上記の課題を解決するために、以下の手段を採用する。
（１）塩化ビニルフィルム上に紫外線硬化型粘着剤層を有する半導体加工用粘着テープであって、
前記紫外線硬化型粘着剤層が、（メタ）アクリル酸エステル共重合体１００質量部に対し、光重合性化合物１０〜１００質量部、硬化剤０．０１〜１０質量部質量部及び光重合開始剤０．１〜１０質量部を含み、
半導体ウエハ又は基板に前記半導体加工用粘着テープを貼り合わせた状態において、紫外線を２５０ｍＪ／ｃｍ ２ 照射した後の、前記半導体ウエハ又は基板と半導体加工用粘着テープとの粘着力が０．０１Ｎ／２０ｍｍ〜０．５Ｎ／２０ｍｍであり、
前記半導体ウエハ又は基板が貼り合わされている領域外の自背面粘着力が１．０Ｎ／２０ｍｍ以下であることを特徴とする半導体加工用粘着テープ。
（２）前記光重合開始剤が２−ヒロドキシ−１−｛４−［４−（２−ヒドロキシ−２−メチル−プロピオニル）−ベンジル］フェニル｝−２−メチル−プロパン−１−オン、２−メチル−１−（４−メチルチオフェニル）−２−モルフォリノプロパン−１−オン及び、エタノン，１−［９−エチル−６−（２−メチルベンゾイル）−９Ｈ−カルバゾール−３−イル］−，１−（０−アセチルオキシム）から選択される１種以上であることを特徴とする（１）に記載の半導体加工用粘着テープ。
（３）半導体ウエハ又は基板と、リングフレームとに（１）または（２）に記載の半導体加工用粘着テープを貼り合せる工程と、
前記半導体ウエハ又は前記基板をダイシングして半導体チップ又は半導体部品に加工するダイシング工程と、
前記半導体加工用粘着テープに紫外線を照射する紫外線照射工程と、
前記半導体チップ又は前記半導体部品同士の間隔を広げるため、前記半導体加工用粘着テープを引き伸ばすエキスパンド工程及び、
前記半導体加工用粘着テープから前記半導体チップ又は前記半導体部品をピックアップするピックアップ工程、
とを有する半導体チップ又は半導体部品の製造方法。
（４）前記ピックアップ工程後に、前記半導体加工用粘着テープを重ねた後、前記半導体加工用粘着テープを剥離し、前記半導体チップ又は半導体部品を検査する検査工程を有する（３）に記載の半導体チップ又は半導体部品の製造方法。
The present invention employs the following means in order to solve the above problems.
(1) An adhesive tape for semiconductor processing having an ultraviolet-curable adhesive layer on a vinyl chloride film,
The ultraviolet-curable pressure-sensitive adhesive layer has a photopolymerizable compound of 10 to 100 parts by mass, a curing agent of 0.01 to 10 parts by mass, and a photopolymerization initiator based on 100 parts by mass of the (meth) acrylate copolymer. 0.1 to 10 parts by mass,
In a state where the adhesive tape for semiconductor processing is adhered to the semiconductor wafer or the substrate, the adhesive force between the semiconductor wafer or substrate and the adhesive tape for semiconductor processing after the irradiation of ultraviolet rays at 250 mJ / cm 2 is 0.01 N /. 20 mm to 0.5 N / 20 mm,
A self-adhesive tape for semiconductor processing, wherein the self-back surface adhesive force outside the region where the semiconductor wafer or substrate is bonded is 1.0 N / 20 mm or less.
(2) the photopolymerization initiator is 2-hydroxy-1- {4- [4- (2-hydroxy-2-methyl-propionyl) -benzyl] phenyl} -2-methyl-propan-1-one; Methyl-1- (4-methylthiophenyl) -2-morpholinopropan-1-one and ethanone, 1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl]-, The pressure-sensitive adhesive tape for processing semiconductors according to (1), which is at least one selected from 1- (0-acetyloxime).
(3) bonding the semiconductor processing adhesive tape according to (1) or (2) to a semiconductor wafer or substrate and a ring frame;
A dicing step of dicing the semiconductor wafer or the substrate into semiconductor chips or semiconductor components,
An ultraviolet irradiation step of irradiating the semiconductor processing adhesive tape with ultraviolet light,
An expanding step of stretching the semiconductor processing adhesive tape, in order to increase the interval between the semiconductor chips or the semiconductor components,
A pickup step of picking up the semiconductor chip or the semiconductor component from the semiconductor processing adhesive tape,
A method for manufacturing a semiconductor chip or a semiconductor component comprising:
(4) The semiconductor chip according to (3), further comprising: an inspection step of inspecting the semiconductor chip or the semiconductor component after peeling the adhesive tape for semiconductor processing after stacking the adhesive tape for semiconductor processing after the pickup step. Or a method of manufacturing a semiconductor component.
＜半導体ウエハ又は基板が貼り合わされている領域、領域外の紫外線硬化型粘着剤の粘着力＞
図１に本発明の紫外線照射工程を示す。紫外線照射をした際、半導体ウエハ又は基板が貼り合わされている領域の紫外線硬化型粘着剤層は、光重合開始剤の酸素による反応阻害の影響をほとんど受けないため、粘着力が低下する。一方、半導体ウエハ又は基板が貼り合わされていない領域の紫外線硬化型粘着剤層は、光重合開始剤の酸素による反応阻害の影響により粘着力が低下しない。従って、紫外線照射後の粘着テープを回収し、重ね合わせた後に、半導体加工用粘着テープの剥離に要する力は、半導体ウエハ等が貼り合わされていなかった領域の粘着力に、左右される。
また、紫外線照射後の半導体ウエハ等が貼り合わされている領域の粘着力は、ピックアップ等が良好な範囲にあることが望まれる。
<Region where the semiconductor wafer or substrate is Awa bonding, adhesive strength of the region outside of the ultraviolet-curable pressure-sensitive adhesive>
FIG. 1 shows an ultraviolet irradiation step of the present invention. When irradiated with ultraviolet light, the ultraviolet-curable pressure-sensitive adhesive layer in the region where the semiconductor wafer or the substrate is bonded is hardly affected by the reaction inhibition by oxygen of the photopolymerization initiator, so that the adhesive strength is reduced. On the other hand, the adhesive strength of the ultraviolet-curable pressure-sensitive adhesive layer in the region where the semiconductor wafer or the substrate is not bonded does not decrease due to the reaction inhibition by the oxygen of the photopolymerization initiator. Therefore, the force required to peel off the adhesive tape for semiconductor processing after collecting and overlapping the adhesive tape after the irradiation of the ultraviolet rays depends on the adhesive force in the region where the semiconductor wafer or the like has not been attached.
Further, it is desired that the adhesive strength of the region where the semiconductor wafer or the like after the ultraviolet irradiation is bonded is within a preferable range for the pickup or the like.
（半導体ウエハ又は基板が貼り合わされている領域の粘着力）
半導体ウエハ又は基板が貼り合わされている領域の粘着力は、ＪＩＳ Ｚ ０２３７記載の方法で２０００±１００ｇのローラーを用いてシリコンウエハに半導体加工用粘着テープを貼り合せた状況において、塩化ビニルフィルム側から紫外線（波長３６５ｎｍ）を２５０ｍＪ／ｃｍ２ 照射した後、半導体加工用粘着テープを温度２３℃、湿度５０％の状態で、１８０°引きはがし法により測定する。
本発明の半導体ウエハ又は基板が貼り合わされている領域の粘着力は、０．０１Ｎ／２０ｍｍ〜０．５Ｎ／２０ｍｍであり、０．０１Ｎ／２０ｍｍ〜０．２Ｎ／２０ｍｍが好ましい。粘着力が０．０１Ｎ／２０ｍｍ未満であると、ピックアップ工程でチップばらけが生じてしまい、生産性低下の要因となり、粘着力が０．５Ｎ／２０ｍｍを超過すると、ピックアップ工程でチップが剥離せず、生産性低下の要因となる。
（半導体ウエハ又は基板が貼り合わされている領域外の粘着力）
半導体ウエハ又は基板が貼り合わされている領域外の粘着力は、半導体加工用粘着テープから剥離フィルムを剥がした状況において、塩化ビニルフィルム側から紫外線（波長３６５ｎｍ）を２５０ｍＪ／ｃｍ２ 照射した後、前記半導体加工用粘着テープを塩化ビニルフィルム面（自背面）にＪＩＳ Ｚ ０２３７記載の方法で２０００±１００ｇのローラーを用いて重ね合わせた後の粘着力を温度２３℃、湿度５０％の状態で、１８０°引きはがし法により測定する。本発明の半導体ウエハ又は基板が貼り合わされている領域外の自背面粘着力については、１．０Ｎ／２０ｍｍ以下であり、０．３Ｎ／２０ｍｍ以下が好ましい。
(Adhesive strength region semiconductor wafer or the substrate is Awa bonding)
Adhesive strength of the region where the semiconductor wafer or substrate is Awa bonding in situations bonding the semiconductor processing adhesive tape to a silicon wafer using a roller of 2000 ± 100 g in JIS Z 0237 according to the method described, a vinyl chloride film side After irradiating with UV light (wavelength 365 nm) from the substrate at 250 mJ / cm 2 , the pressure-sensitive adhesive tape for semiconductor processing is measured by a 180 ° peeling method at a temperature of 23 ° C. and a humidity of 50%.
The adhesive strength of the region where the semiconductor wafer or substrate of the present invention is bonded is 0.01 N / 20 mm to 0.5 N / 20 mm, preferably 0.01 N / 20 mm to 0.2 N / 20 mm. If the adhesive force is less than 0.01 N / 20 mm, chips may be dispersed in the pick-up process, which may cause a decrease in productivity. If the adhesive force exceeds 0.5 N / 20 mm, the chips will not peel off in the pick-up process. , Which is a factor in productivity.
(Adhesive strength outside area semiconductor wafer or the substrate is Awa bonding)
Adhesive strength of the extracellular region of a semiconductor wafer or substrate is Awa bonding in situations in which the release film was peeled from the semiconductor processing adhesive tape, after ultraviolet ray (wavelength of 365nm) 250mJ / cm 2 was irradiated from a vinyl chloride film side, The pressure-sensitive adhesive strength after laminating the pressure-sensitive adhesive tape for semiconductor processing on a vinyl chloride film surface (own back surface) using a roller of 2,000 ± 100 g according to the method described in JIS Z 0237 at a temperature of 23 ° C. and a humidity of 50%. It is measured by a 180 ° peeling method. The self-back surface adhesive force outside the region where the semiconductor wafer or substrate of the present invention is bonded is 1.0 N / 20 mm or less, preferably 0.3 N / 20 mm or less.
（２）粘着力の評価
（２−１）半導体ウエハまたは基板が貼り合わされている領域の粘着力の測定
半導体ウエハまたは基板に貼り合わされた領域の粘着力は、シリコンウエハに半導体加工用粘着テープを貼り合せた状態において、塩化ビニルフィルム側から紫外線（波長３６５ｎｍ）を２５０ｍＪ／ｃｍ２ 照射後（紫外線照射機（ウシオ電機社製、ＵＶＣ−４８００−４））に、前記半導体加工用粘着テープを２３℃、相対湿度５０％の雰囲気下で、１８０°引きはがし法により、測定した（引張試験機（エー・アンド・デイ社製、ＲＴＧ−１２１０）、引張速度は３００ｍｍ／ｍｉｎ、半導体加工用粘着テープのサイズは２５０ｍｍ×２０ｍｍ）。
◎（優）：塩化ビニルフィルム面に対する粘着力が０．０１Ｎ／２０ｍｍ以上０．２Ｎ／２０ｍｍ未満
○（良）：塩化ビニルフィルム面に対する粘着力が０．２Ｎ／２０ｍｍ以上０．５Ｎ／２０ｍｍ未満
×（不可）：塩化ビニルフィルム面に対する粘着力が０．５Ｎ／２０ｍｍ以上
(2) Evaluation of Adhesive Strength (2-1) Measurement of Adhesive Strength of Area to which Semiconductor Wafer or Substrate is Attached The adhesive strength of the area bonded to the semiconductor wafer or the substrate is obtained by applying an adhesive tape for semiconductor processing to a silicon wafer. In the bonded state, the ultraviolet ray (wavelength 365 nm) was irradiated with 250 mJ / cm 2 from the vinyl chloride film side (ultraviolet ray irradiator (Ushio Inc., UVC-4800-4)), and then the adhesive tape for semiconductor processing was applied to 23. In an atmosphere of 50 ° C. and a relative humidity of 50%, it was measured by a 180 ° peeling method (tensile tester (RTG-1210, manufactured by A & D Corp.), tensile speed: 300 mm / min, adhesive tape for semiconductor processing Is 250 mm x 20 mm).
◎ (Excellent): Adhesion to the vinyl chloride film surface is 0.01 N / 20 mm or more and less than 0.2 N / 20 mm ○ (Good): Adhesion to the vinyl chloride film surface is 0.2 N / 20 mm or more and less than 0.5 N / 20 mm × (impossible): Adhesion to the vinyl chloride film surface is 0.5 N / 20 mm or more
（２−２）半導体ウエハまたは基板が貼り合わされている領域外の自背面粘着力の測定
半導体ウエハまたは基板に貼り合わされた領域外の粘着力は、ウエハが貼られていない状態で紫外線を照射して測定した。具体的には、半導体加工用粘着テープに、塩化ビニルフィルム側から紫外線（波長３６５ｎｍ）を２５０ｍＪ／ｃｍ２ 照射後（紫外線照射機（ウシオ電機社製、ＵＶＣ−４８００−４））に、半導体加工用粘着テープを塩化ビニルフィルム面（自背面）にして重ね合わせ、２０分経過後、２３℃、相対湿度５０％の雰囲気下、１８０°引きはがし法により、測定した（引張試験機（エー・アンド・デイ社製、ＲＴＧ−１２１０）、引張速度は３００ｍｍ／ｍｉｎ、半導体加工用粘着テープのサイズは２５０ｍｍ×２０ｍｍ）。
◎（優）：塩化ビニルフィルム面に対する粘着力が０．３Ｎ／２０ｍｍ未満
○（良）：塩化ビニルフィルム面に対する粘着力が０．３Ｎ／２０ｍｍ以上１．０Ｎ／２０ｍｍ未満
×（不可）：塩化ビニルフィルム面に対する粘着力が１．０Ｎ／２０ｍｍ以上
(2-2) Measurement of self-back surface adhesive force outside the region where the semiconductor wafer or the substrate is bonded The adhesive force outside the region where the semiconductor wafer or the substrate is bonded is measured by irradiating ultraviolet rays in a state where the wafer is not bonded. Measured. Specifically, after irradiating the adhesive tape for semiconductor processing with 250 mJ / cm 2 of ultraviolet light (wavelength 365 nm) from the vinyl chloride film side (an ultraviolet irradiator (Ushio Inc., UVC-4800-4)), The adhesive tape was overlaid on the vinyl chloride film surface (self-rear surface), and after 20 minutes, measured by a 180 ° peeling method in an atmosphere of 23 ° C. and 50% relative humidity (tensile tester (A & N) (DTG, RTG-1210), tensile speed: 300 mm / min, size of adhesive tape for semiconductor processing: 250 mm × 20 mm).
◎ (Excellent): Adhesion to the vinyl chloride film surface is less than 0.3 N / 20 mm. ○ (Good): Adhesion to the vinyl chloride film surface is 0.3 N / 20 mm or more and less than 1.0 N / 20 mm. Adhesion to vinyl film surface is 1.0N / 20mm or more
Claims (4)
前記紫外線硬化型粘着剤層が、（メタ）アクリル酸エステル共重合体１００質量部に対し、光重合性化合物１０〜１００質量部、硬化剤０．０１〜１０質量部及び光重合開始剤０．１〜１０質量部を含み、
半導体ウエハ又は基板に前記半導体加工用粘着テープを貼り合わせた状態において、紫外線を２５０ｍＪ／ｃｍ ２ 照射した後の、半導体ウエハ又は基板と半導体加工用粘着テープとの粘着力が０．０１Ｎ／２０ｍｍ〜０．５Ｎ／２０ｍｍであり、
半導体ウエハ又は基板が貼り合わされている領域外の自背面粘着力が１．０Ｎ／２０ｍｍ以下であることを特徴とする半導体加工用粘着テープ。 A semiconductor processing adhesive tape having an ultraviolet-curable adhesive layer on a vinyl chloride film,
The ultraviolet-curable pressure-sensitive adhesive layer is composed of 10 to 100 parts by mass of a photopolymerizable compound, 0.01 to 10 parts by mass of a curing agent, and 0.1 to 10 parts by mass of a photopolymerization initiator based on 100 parts by mass of a (meth) acrylate copolymer. 1 to 10 parts by mass,
In a state where the adhesive tape for semiconductor processing is bonded to the semiconductor wafer or the substrate, the adhesive force between the semiconductor wafer or the substrate and the adhesive tape for semiconductor processing is 0.01 N / 20 mm or more after irradiating with ultraviolet light at 250 mJ / cm 2. 0.5N / 20mm,
A self-adhesive tape for semiconductor processing, wherein the self-back surface adhesive force outside a region where a semiconductor wafer or a substrate is bonded is 1.0 N / 20 mm or less.
前記半導体ウエハ又は前記基板をダイシングして半導体チップ又は半導体部品に加工するダイシング工程と、
前記半導体加工用粘着テープに紫外線を照射する紫外線照射工程と、
前記半導体チップ又は前記半導体部品同士の間隔を広げるため、前記半導体加工用粘着テープを引き伸ばすエキスパンド工程及び、
前記半導体加工用粘着テープから前記半導体チップ又は前記半導体部品をピックアップするピックアップ工程、
とを有する半導体チップ又は半導体部品の製造方法。 A step of bonding the semiconductor processing adhesive tape according to claim 1 or 2 to a semiconductor wafer or substrate and a ring frame,
A dicing step of dicing the semiconductor wafer or the substrate into semiconductor chips or semiconductor components,
An ultraviolet irradiation step of irradiating the semiconductor processing adhesive tape with ultraviolet light,
An expanding step of stretching the semiconductor processing adhesive tape, in order to increase the interval between the semiconductor chips or the semiconductor components,
A pickup step of picking up the semiconductor chip or the semiconductor component from the semiconductor processing adhesive tape,
A method for manufacturing a semiconductor chip or a semiconductor component comprising:
The semiconductor chip or the semiconductor component according to claim 3, further comprising an inspection step of peeling the adhesive tape for the semiconductor processing after stacking the adhesive tape for the semiconductor processing after the pickup step, and inspecting the semiconductor chip or the semiconductor component. Manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017031791A JP6886838B2 (en) | 2017-02-23 | 2017-02-23 | Adhesive tape for semiconductor processing and manufacturing method of semiconductor chips or semiconductor parts using it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017031791A JP6886838B2 (en) | 2017-02-23 | 2017-02-23 | Adhesive tape for semiconductor processing and manufacturing method of semiconductor chips or semiconductor parts using it |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018137376A JP2018137376A (en) | 2018-08-30 |
| JP2018137376A5 true JP2018137376A5 (en) | 2020-02-27 |
| JP6886838B2 JP6886838B2 (en) | 2021-06-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2017031791A Active JP6886838B2 (en) | 2017-02-23 | 2017-02-23 | Adhesive tape for semiconductor processing and manufacturing method of semiconductor chips or semiconductor parts using it |
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| JP2001240842A (en) * | 2000-02-28 | 2001-09-04 | Nitto Denko Corp | Uv-curing type adhesive composition and its adhesive sheets |
| JP2008045091A (en) * | 2006-08-21 | 2008-02-28 | Nitto Denko Corp | Pressure-sensitive adhesive sheet for processing |
| JP2011132354A (en) * | 2009-12-24 | 2011-07-07 | Hitachi Maxell Ltd | Ultraviolet-curing adhesive film |
| JP5977954B2 (en) * | 2012-02-09 | 2016-08-24 | リンテック株式会社 | Semiconductor wafer processing sheet |
| JP5850773B2 (en) * | 2012-03-19 | 2016-02-03 | 三井化学株式会社 | Adhesive, laminate and surface protective film |
| CN105264034B (en) * | 2013-06-14 | 2019-03-12 | 电化株式会社 | The heat resistance bonding sheet of semiconductor inspection |
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