JPH10279894A - Pressure-sensitive adhesive sheet and method for processing semiconductor wafer - Google Patents

Pressure-sensitive adhesive sheet and method for processing semiconductor wafer

Info

Publication number
JPH10279894A
JPH10279894A JP9081770A JP8177097A JPH10279894A JP H10279894 A JPH10279894 A JP H10279894A JP 9081770 A JP9081770 A JP 9081770A JP 8177097 A JP8177097 A JP 8177097A JP H10279894 A JPH10279894 A JP H10279894A
Authority
JP
Japan
Prior art keywords
radiation
sensitive adhesive
pressure
wafer
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9081770A
Other languages
Japanese (ja)
Other versions
JP3909907B2 (en
Inventor
Takeshi Matsumura
健 松村
Yuzo Akata
祐三 赤田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Priority to JP08177097A priority Critical patent/JP3909907B2/en
Publication of JPH10279894A publication Critical patent/JPH10279894A/en
Application granted granted Critical
Publication of JP3909907B2 publication Critical patent/JP3909907B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Dicing (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain a pressure-sensitive adhesive sheet for processing semiconductor wafers, which does not emit a strong odor after being cured, is not problematic in submicron contamination due to the adhesive remaining not removed and peeling at the interface between the back of the chip and the sealing resin due to the contamination of the back of the wafer by forming a radiation-curing pressure-sensitive adhesive layer containing a polymerized photopolymerization initiator on at least either surface of a radiation-penetrating film base material. SOLUTION: 100 pts.wt. base polymer such as a natural rubber, a synthetic rubber or an acrylic polymer is mixed with 1-300 pts.wt. radiation-curing compound having a molecular weight of 10,000 or below and 0.1-10 pts.wt. polymerized photopolymerization initiator having a molecular weight of 1,000-100,000, desirably 2,000-100,000 to obtain a radiation-curing pressure-sensitive adhesive, Either surface of a radiation-penetrating film base material having a thickness of 30-500 μm, desirably 40-300 μm is coated with the above adhesive in a thickness of 5-100 μm to obtain a pressure-sensitive adhesive sheet. After this sheet is stuck to one surface of a semiconductor wafer, the other surface is subjected to grinding, dicing or the like.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、放射線硬化型であ
る半導体ウエハ加工用粘着シ―ト類と、これを用いた半
導体ウエハ加工方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a radiation-curable adhesive sheet for processing semiconductor wafers and a semiconductor wafer processing method using the same.

【0002】[0002]

【従来の技術】通常、半導体集積回路は、高純度シリコ
ン単結晶などをスライスしてウエハとしたのち、ウエハ
表面にICなどの所定の回路パタ―ンをエツチング形成
して集積回路を組み込み、ついでウエハ裏面を研削機に
より研削して、ウエハの厚さを100〜600μm程度
まで薄くし、最後にダイシングしてチツプ化することに
より、製造されている。ここで、上記研削時には、ウエ
ハ表面に粘着シ―ト類を貼り付けて、ウエハの破損を防
止したり、研削加工を容易にしている。また、上記ダイ
シング時には、ウエハ裏面側に粘着シ―ト類を貼り付け
て、ウエハを接着固定した状態でダイシングし、形成さ
れるチツプをフイルム基材側よりニ―ドルで突き上げて
ピツクアツプし、ダイパツド上に固定させている。
2. Description of the Related Art Normally, a semiconductor integrated circuit is formed by slicing a high-purity silicon single crystal or the like into a wafer, forming a predetermined circuit pattern such as an IC on the surface of the wafer, and incorporating the integrated circuit. The wafer is manufactured by grinding the back surface of the wafer with a grinder, reducing the thickness of the wafer to about 100 to 600 μm, and finally dicing and chipping. At the time of the above-mentioned grinding, an adhesive sheet is attached to the surface of the wafer to prevent breakage of the wafer and facilitate the grinding. At the time of dicing, an adhesive sheet is adhered to the back surface of the wafer, and the wafer is diced in a state where the wafer is bonded and fixed. The formed chip is picked up by a needle from the film substrate side and picked up. It is fixed on top.

【0003】このような目的で用いられる粘着シ―ト類
は、研削加工やダイシング加工中に剥離しない程度の粘
着力が必要である一方、研削加工後や、ダイシング後の
ピツクアツプ時には、容易に剥離でき、また半導体ウエ
ハを破損しない程度の低い粘着力であることが要求さ
れ、さらにウエハ表面やウエハ裏面に糊残りを生じず、
これらの面を汚染しないものであることが望まれる。
[0003] Adhesive sheets used for such purposes need to have an adhesive force that does not peel during grinding or dicing, but easily peel off during grinding or pick-up after dicing. It is required that the adhesive strength be low enough not to damage the semiconductor wafer, and there is no adhesive residue on the wafer surface or wafer back surface.
It is desired that these surfaces are not contaminated.

【0004】近年、半導体ウエハは大口径化、薄型化の
傾向にあり、また酸によるウエハ裏面のエツチング工程
が加わつてきている。このような状況において、上記の
粘着シ―ト類に、加工中の耐水性、加工中や剥離時の非
破損性、酸によるエツチング時の耐酸性、剥離容易性、
非汚染性などの各種特性のバランスを保たせることが難
しくなつている。また、ダイシング工程では、半導体パ
ツケ―ジでLOC構造のものや、ダイパツドの面積がチ
ツプよりも小さい構造のものが増加しており、これらの
パツケ―ジでは今までのパツケ―ジと異なり、チツプの
裏面が直接封止樹脂に接触しているため、半導体ウエハ
の裏面とパツケ―ジとの密着性が損なわれないように、
ウエハ裏面の低汚染性がより重要になつている。
In recent years, semiconductor wafers have tended to be larger in diameter and thinner, and an etching step for the back surface of the wafer with an acid has been added. In such a situation, the above-mentioned pressure-sensitive adhesive sheets have water resistance during processing, undamaged during processing or peeling, acid resistance during etching with an acid, easy peeling,
It is becoming increasingly difficult to balance various properties such as non-staining properties. In the dicing process, semiconductor packages having a LOC structure and those having a die pad area smaller than that of a chip are increasing. In these packages, unlike the conventional packages, the chip is different. The back surface of the semiconductor wafer is in direct contact with the sealing resin, so that the adhesion between the back surface of the semiconductor wafer and the package is not impaired.
Low contamination on the backside of the wafer is becoming more important.

【0005】半導体ウエハ加工用粘着シ―ト類として、
現在、最も注目されているものは、放射線硬化型の粘着
シ―ト類、つまり、フイルム基材の片面に放射線硬化型
粘着剤層を設けてなる粘着シ―ト類である。この種の粘
着シ―ト類は、常態時には強い粘着力を有しているた
め、これをウエハ表面または裏面に貼り合わせることに
より、研削加工やダイシング加工時の水圧に耐える大き
な粘着力が得られ、また粘着剤組成の選択などによつて
良好な耐酸性も期待でき、一方、上記加工後には光など
の放射線を照射して、上記粘着剤層を硬化させると、そ
の粘着力が著しく低下して、良好な剥離容易性とウエハ
の非破損性が得られ、またウエハの非汚染性にも比較的
良好な結果が得られるなどの利点がある。
[0005] As adhesive sheets for processing semiconductor wafers,
At present, attention is paid to radiation-curable pressure-sensitive adhesive sheets, that is, pressure-sensitive adhesive sheets obtained by providing a radiation-curable pressure-sensitive adhesive layer on one surface of a film substrate. This kind of adhesive sheet has a strong adhesive force under normal conditions, and by bonding it to the front or back surface of the wafer, a large adhesive force that can withstand the water pressure during grinding and dicing can be obtained. Also, good acid resistance can be expected depending on the selection of the adhesive composition and the like. On the other hand, when the above-mentioned processing is irradiated with radiation such as light to cure the above-mentioned adhesive layer, the adhesive strength thereof is significantly reduced. As a result, there are advantages in that good peeling easiness and good non-breakability of the wafer can be obtained, and relatively good results can be obtained in non-contamination of the wafer.

【0006】[0006]

【発明が解決しようとする課題】しかるに、この放射線
硬化型の粘着シ―ト類は、光を照射して硬化させたとき
に強い臭気を発生し、作業者に不快な気持ちをいだかせ
たり、健康衛生の面でも決して好ましいものとはいえな
かつた。また、剥離後のウエハの非汚染性は、他の粘着
シ―ト類に比べて格段にすぐれているが、糊残りによる
ミクロンオ―ダまたはサブミクロンオ―ダの汚染はいぜ
んとして発生することがあり、この汚染がダイシング加
工でのウエハ裏面の場合、半導体パツケ―ジをハンダリ
フロ―した際に、チツプ裏面と封止樹脂との境界での剥
離の原因となり、半導体集積回路の長期的な信頼性が損
なわれるという問題があつた。
However, such radiation-curable adhesive sheets generate a strong odor when cured by irradiating light, causing the worker to feel uncomfortable, In terms of health and hygiene, it was far from favorable. In addition, the non-staining property of the wafer after peeling is much better than other adhesive sheets, but contamination of micron order or submicron order due to adhesive residue may still occur. If the contamination is on the back surface of the wafer in the dicing process, when the semiconductor package is reflowed, it may cause separation at the boundary between the back surface of the chip and the sealing resin, thereby impairing the long-term reliability of the semiconductor integrated circuit. There was a problem.

【0007】本発明は、このような事情に照らし、放射
線硬化型である半導体ウエハ加工用粘着シ―ト類とし
て、研削加工やダイシング加工などの加工時には大きな
粘着力を示して加工目的を果たし、加工後剥離する際に
は放射線の照射による硬化にてウエハの破損などを生じ
ることなく容易に剥離できるとともに、上記の硬化後に
強い臭気を発生せず、また糊残りによるミクロンオ―ダ
またはサブミクロンオ―ダの汚染がみられない、とくに
ウエハ裏面の上記汚染に起因したチツプ裏面と封止樹脂
との境界での剥離などの心配のない上記粘着シ―ト類
と、これを用いた半導体ウエハ加工方法を提供すること
を目的としている。
In view of such circumstances, the present invention fulfills the processing purpose as a radiation-curable adhesive sheet for processing semiconductor wafers, which exhibits a large adhesive force during processing such as grinding and dicing. When peeling after processing, it can be peeled easily without causing damage to the wafer by curing by irradiation of radiation, does not generate strong odor after the above-mentioned curing, and has micron order or submicron order due to adhesive residue. The above-mentioned pressure-sensitive adhesive sheets which are free from contamination, and in particular there is no fear of peeling off at the boundary between the chip back surface and the sealing resin due to the above-mentioned contamination on the wafer back surface, and a semiconductor wafer processing method using the same. It is intended to provide.

【0008】[0008]

【課題を解決するための手段】本発明者らは、上記の目
的を達成するために、鋭意検討した結果、放射線硬化型
粘着剤層中には通常ベンゾフエノン、チオキサントンな
どの公知の光重合開始剤を含ませるようにしているが、
この公知の開始剤に代えて高分子量の特定の光重合開始
剤を含ませるようにしたときに、放射線照射後の強い臭
気がなくなり、また糊残りによるミクロンオ―ダまたは
サブミクロンオ―ダの汚染がみられなくなることを見い
出し、本発明を完成するに至つたものである。
Means for Solving the Problems The present inventors have conducted intensive studies in order to achieve the above-mentioned object. As a result, the radiation-curable pressure-sensitive adhesive layer usually contains a known photopolymerization initiator such as benzophenone or thioxanthone. Is included.
When a specific photopolymerization initiator having a high molecular weight is added instead of the known initiator, strong odor after irradiation is eliminated, and contamination of micron order or submicron order due to adhesive residue is observed. It has been found that the present invention is no longer possible, and the present invention has been completed.

【0009】すなわち、本発明は、放射線透過性のフイ
ルム基材の片面にポリマ―化した光重合開始剤を含有す
る放射線硬化型粘着剤層が設けられてなることを特徴と
するシ―ト状やテ―プ状などの半導体ウエハ加工用粘着
シ―ト類(請求項1)と、半導体ウエハに、上記構成の
粘着シ―ト類を貼り付けて、所要のウエハ加工を施し、
ついで、放射線の照射により上記粘着シ―ト類の放射線
硬化型粘着剤層を硬化させたのち、上記粘着シ―ト類を
剥離することを特徴とする半導体ウエハ加工方法(請求
項2)とに係るものである。
That is, the present invention is characterized in that a radiation-curable pressure-sensitive adhesive layer containing a polymerized photopolymerization initiator is provided on one surface of a radiation-permeable film substrate. Adhesive sheets for processing semiconductor wafers such as tapes and tapes (Claim 1), and the adhesive sheets having the above-described configuration are attached to a semiconductor wafer and subjected to required wafer processing.
Then, after the radiation-curable pressure-sensitive adhesive layer of the pressure-sensitive adhesive sheet is cured by irradiation with radiation, the pressure-sensitive adhesive sheet is peeled off. It is related.

【0010】[0010]

【発明の実施の形態】本発明における放射線硬化型粘着
剤層は、ベ―スポリマ―に放射線重合性化合物とともに
特定の光重合開始剤を含ませてなるものであり、通常は
これにさらにポリイソシアネ―ト化合物、アルキルエ―
テル化メラミン化合物、エポキシ系化合物、シランカツ
プリング剤などの公知の架橋剤を含ませてなるものであ
る。また、必要により、半導体ウエハへの粘着力をコン
トロ―ルするため、タツキフアイア、粘着調整剤、界面
活性剤、その他の改質剤および慣用成分を含ませること
もできる。ただし、界面活性剤や界面活性を示す化合物
などは、半導体ウエハの加工という観点より、なるべく
少ない方が好ましい。
BEST MODE FOR CARRYING OUT THE INVENTION The radiation-curable pressure-sensitive adhesive layer in the present invention comprises a base polymer containing a radiation-polymerizable compound and a specific photopolymerization initiator, and usually further comprises a polyisocyanate. Compound, alkyl ether
It contains a known crosslinking agent such as a melamine compound, an epoxy compound, or a silane coupling agent. If necessary, a tackifier, a tackifier, a surfactant, other modifiers, and conventional components can be included to control the adhesive force to the semiconductor wafer. However, from the viewpoint of processing a semiconductor wafer, it is preferable that the amount of a surfactant, a compound exhibiting surface activity, and the like be as small as possible.

【0011】ベ―スポリマ―は、とくに限定されず、従
来公知のものを広く使用できる。たとえば、天然ゴムや
各種の合成ゴムなどのゴム系ポリマ―、(メタ)アクリ
ル酸アルキルエステルとこれと共重合可能な他の不飽和
単量体との共重合体からなるアクリル系ポリマ―などが
ある。これらのベ―スポリマ―は、分子内に放射線にて
重合する炭素−炭素二重結合を持つたものであつてもよ
い。
The base polymer is not particularly limited, and conventionally known base polymers can be widely used. For example, rubber polymers such as natural rubber and various synthetic rubbers, and acrylic polymers comprising a copolymer of an alkyl (meth) acrylate and another unsaturated monomer copolymerizable therewith, and the like. is there. These base polymers may have a carbon-carbon double bond polymerizable by radiation in the molecule.

【0012】放射線重合性化合物は、放射線の照射によ
り硬化して三次元網状化する、分子中に放射線重合性の
炭素−炭素二重結合を少なくとも2個有する、分子量が
通常10,000以下の低分子量化合物である。放射線
の照射による粘着剤層の三次元網状化が効率良くなされ
るように、分子量が5,000以下でかつ分子内の放射
線重合性の炭素−炭素二重結合の数が2〜6個であるも
のが好ましい。
The radiation-polymerizable compound is cured by irradiation with radiation to form a three-dimensional network, has at least two radiation-polymerizable carbon-carbon double bonds in the molecule, and has a low molecular weight of usually 10,000 or less. It is a molecular weight compound. The molecular weight is 5,000 or less, and the number of radiation-polymerizable carbon-carbon double bonds in the molecule is 2 to 6 so that the three-dimensional network of the pressure-sensitive adhesive layer is efficiently formed by irradiation with radiation. Are preferred.

【0013】このような放射線重合性化合物としては、
たとえば、トリメチロ―ルプロパントリアクリレ―ト、
テトラメチロ―ルメタンテトラアクリレ―ト、ペンタエ
リスリト―ルトリアクリレ―ト、ペンタエリスリト―ル
テトラアクリレ―ト、ジペンタエリスリト―ルモノヒド
ロキシペンタアクリレ―ト、ジペンタエリスリト―ルヘ
キサアクリレ―ト、1,4−ブチレングリコ―ルジアク
リレ―ト、1,6−ヘキサンジオ―ルジアクリレ―ト、
ポリエチレングリコ―ルジアクリレ―ト、特公平5−2
5907号公報(とくに、この公報の従来技術の欄)に
記載されているようなオルガノポリシロキサン組成物、
市販のオリゴエステルアクリレ―ト、ウレタンアクリレ
―トなどが挙げられる。
[0013] Such radiation polymerizable compounds include:
For example, trimethylolpropane triacrylate,
Tetramethylol methane tetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1, 4-butylene glycol diacrylate, 1,6-hexanediol diacrylate,
Polyethylene glycol diacrylate, Tokuho 5-2
No. 5907 (particularly, the prior art section of this publication), an organopolysiloxane composition,
Commercially available oligoester acrylate, urethane acrylate and the like can be mentioned.

【0014】これらの放射線重合性化合物は、1種を単
独で用いても、2種以上を併用してもよい。使用量は、
ベ―スポリマ―100重量部に対し、1〜300重量部
とするのがよい。1重量部未満では、放射線硬化型粘着
剤層の放射線の照射による三次元網状化が不十分とな
り、粘着シ―ト類をウエハから剥離する際の剥離性に劣
り、またウエハを汚染するおそれがある。300重量部
を超えると、放射線を照射する前の粘着剤層の厚み精度
が悪くなるなどの問題がある。
These radiation polymerizable compounds may be used alone or in combination of two or more. The amount used is
The amount is preferably 1 to 300 parts by weight based on 100 parts by weight of the base polymer. If the amount is less than 1 part by weight, the radiation-curable pressure-sensitive adhesive layer may be insufficiently three-dimensionally reticulated by irradiation with radiation, resulting in inferior peelability of the pressure-sensitive adhesive sheet from the wafer and the possibility of contamination of the wafer. is there. When the amount exceeds 300 parts by weight, there is a problem that the thickness accuracy of the pressure-sensitive adhesive layer before irradiation with radiation is deteriorated.

【0015】光重合開始剤としては、ポリマ―化したも
の、通常は、分子量が1,000〜100,000、好
ましくは2,000〜100,000のものが用いられ
る。このような高分子量の光重合開始剤を用いると、光
などの放射線を照射して粘着剤層を硬化させる際に、こ
の粘着剤層が発熱したときでも、熱による揮散や分解な
どに起因した臭気の発生がみられなくなり、また粘着剤
層が適度な凝集力を有するものとなつて、剥離時にウエ
ハへの糊残りが少なくなり、従来のようなミクロンオ―
ダまたはサブミクロンオ―ダのウエハ汚染が防がれる。
As the photopolymerization initiator, a polymerized one, usually having a molecular weight of 1,000 to 100,000, preferably 2,000 to 100,000 is used. When such a high molecular weight photopolymerization initiator is used, when the pressure-sensitive adhesive layer is cured by irradiating radiation such as light, even when this pressure-sensitive adhesive layer generates heat, it is caused by volatilization or decomposition due to heat, etc. Odor generation is no longer observed, and the adhesive layer has an appropriate cohesive force. As a result, the adhesive residue on the wafer during peeling is reduced, and the conventional micron-coating method is used.
Wafer contamination of the order of magnitude or submicron is prevented.

【0016】このような光重合開始剤としては、ベンゾ
イン型、カルボニル型などを用いるのが好ましく、これ
らの基が高分子中に複数個あるもの、たとえば、ポリビ
ニルベンゾイン系、ポリビニルケトン系などが好適に用
いられる。市販品としては、シ―ベルヘグナ―(販売
元)の「ESACURE KIP100」、「ESAC
URE KIP150」などが挙げられる。「ESAC
URE KIP150」は、下記の構造式(1)で表さ
れる、オリゴ{2−ヒドロキシ−2−メチル−1−[4
−(1−メチルビニル)フエニル]プロパノン}であ
る。
As such a photopolymerization initiator, it is preferable to use a benzoin type, a carbonyl type or the like, and those having a plurality of these groups in a polymer, for example, a polyvinyl benzoin type or a polyvinyl ketone type are preferable. Used for Commercially available products include "ESACURE KIP100" and "ESACURE KIP100" by Siebel Hegner (distributor).
URE KIP150 ". "ESAC
URE KIP150 ”is an oligo {2-hydroxy-2-methyl-1- [4] represented by the following structural formula (1).
-(1-methylvinyl) phenyl] propanone}.

【0017】[0017]

【化1】 Embedded image

【0018】上記以外の光重合開始剤として、下記の構
造式(2)で表されるもの〔J.Polyme.Sci
Apolymer chem 24.875(‘8
6)〕、下記の構造式(3)または(4)で表されるも
の(特開昭50−130886号公報、ジ―ワコ―ポレ
―シヨン)、下記の構造式(5)で表されるもの〔Te
trahedron Lett 323(‘74)〕、
下記の構造式(6)で表されるもの〔Eur.Poly
mer J.14.317(‘78)〕、下記の構造式
(7)で表されるもの〔J.Polyme.Sci c
hem,ed.,19.855(‘81)〕などを用い
ることもできる。
Other photopolymerization initiators represented by the following structural formula (2) [J. Polymer. Sci
Apolymer Chem 24.875 ('8
6)], those represented by the following structural formula (3) or (4) (JP-A-50-130886, J-Wako-Polysion), represented by the following structural formula (5) Thing [Te
trahedron Lett 323 ('74)],
Those represented by the following structural formula (6) [Eur. Poly
mer J .; 14.317 ('78)] and those represented by the following structural formula (7) [J. Polymer. Scic
hem, ed. , 19.855 ('81)].

【0019】[0019]

【化2】 Embedded image

【0020】[0020]

【化3】 Embedded image

【0021】[0021]

【化4】 Embedded image

【0022】[0022]

【化5】 Embedded image

【0023】[0023]

【化6】 Embedded image

【0024】[0024]

【化7】 Embedded image

【0025】このような光重合開始剤は、ベ―スポリマ
―100重量部に対し、通常0.1〜10重量部、好ま
しくは1〜10重量部の割合で使用するのがよい。0.
1重量部未満では、粘着剤層の放射線の照射による三次
元網状化が不十分となり、良好な剥離性が得られなかつ
たり、ウエハ汚染の原因となる。また、10重量部を超
えて使用しても、それに見合つた効果が得られないばか
りか、ウエハにこの光重合開始剤が残留するおそれがあ
る。
The photopolymerization initiator is used in an amount of usually 0.1 to 10 parts by weight, preferably 1 to 10 parts by weight, based on 100 parts by weight of the base polymer. 0.
If the amount is less than 1 part by weight, three-dimensional network formation by irradiation of the pressure-sensitive adhesive layer with radiation is insufficient, and good peelability cannot be obtained, and this causes wafer contamination. Further, even if it is used in excess of 10 parts by weight, not only the effect corresponding thereto is not obtained, but also the photopolymerization initiator may remain on the wafer.

【0026】なお、上記特定の光重合開始剤とともに、
イソプロピルベンゾインエ―テル、イソブチルベンゾイ
ンエ―テル、ベンゾフエノン、ミヒラ―ズケトン、クロ
ロチオキサントン、ドデシルチオキサントン、ジメチル
チオキサントン、ジエチルチオキサントン、ベンジルジ
メチルケタ―ル、α−ヒドロキシクロロヘキシルフエニ
ルケトン、2−ヒドロキシメチルフエニルプロパンなど
の他の光重合開始剤を、本発明の効果を損なわない範囲
内で併用してもよい。また、必要により、これらの光重
合開始剤とともに、トリエチルアミン、テトラエチルペ
ンタアミン、ジメチルアミノエタノ―ルなどのアミン化
合物を光重合促進剤として併用することもできる。
In addition, together with the specific photopolymerization initiator,
Isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, benzyldimethylketal, α-hydroxychlorohexylphenyl ketone, 2-hydroxymethylphenyl Other photopolymerization initiators such as enylpropane may be used together as long as the effects of the present invention are not impaired. If necessary, an amine compound such as triethylamine, tetraethylpentamine or dimethylaminoethanol can be used as a photopolymerization accelerator together with these photopolymerization initiators.

【0027】本発明においては、フイルム基材の片面
に、上記のベ―スポリマ―、放射線重合性化合物および
特定の光重合開始剤、必要により架橋剤およびその他の
配合剤成分を含ませた放射線硬化型粘着剤を、直接塗布
し加熱乾燥するか、あるいは、剥離紙上に一旦塗布し乾
燥したのちフイルム基材の片面に転写することにより、
厚さが通常5〜100μmとなる放射線硬化型粘着剤層
を形成して、シ―ト状、テ―プ状などの半導体ウエハ加
工用粘着シ―ト類とする。その際、上記の粘着剤層を配
合成分の異なる多層構造としてもよい。
In the present invention, a radiation-curable composition comprising the above-mentioned base polymer, a radiation-polymerizable compound, a specific photopolymerization initiator, and, if necessary, a cross-linking agent and other compounding ingredients on one side of a film substrate. By directly applying the mold adhesive and drying by heating, or by once applying and drying on release paper and then transferring it to one side of the film substrate,
A radiation-curable pressure-sensitive adhesive layer having a thickness of usually 5 to 100 μm is formed to obtain a sheet-like, tape-like or other pressure-sensitive adhesive sheet for processing a semiconductor wafer. In this case, the above-mentioned pressure-sensitive adhesive layer may have a multilayer structure having different components.

【0028】フイルム基材としては、剥離時にフイルム
基材側から放射線を照射するため、放射線透過性である
ことが必要で、またウエハ加工時の衝撃緩和能や洗浄水
などに耐える強度を有していることが必要で、これらに
適した材質および厚さが選択される。なお、このような
フイルム基材の粘着剤層形成面には、粘着剤層の投錨性
を向上させるため、コロナ処理しておくのが望ましい。
Since the film substrate is irradiated with radiation from the film substrate side at the time of peeling, the film substrate needs to be radiation-transmissive, and has a shock absorbing ability at the time of processing a wafer and a strength enough to withstand washing water. And a material and thickness suitable for them are selected. It is desirable that the surface of the film substrate on which the pressure-sensitive adhesive layer is formed be subjected to a corona treatment in order to improve the anchoring property of the pressure-sensitive adhesive layer.

【0029】このようなフイルム基材には、ポリエチレ
ン、ポリプロピレン、エチレン−プロピレン共重合体、
ポリ塩化ビニル、ポリエチレンテレフタレ―ト、ポリブ
チレンテレフタレ―ト、エチレン−酢酸ビニル共重合
体、ポリブテン−1、ポリ−4−メチルペンテン−1、
エチレン−アクリル酸エチル共重合体、エチレン−アク
リル酸メチル共重合体、エチレン−アクリル酸共重合
体、ポリウレタン、ポリメチルペンテン、ポリブタジエ
ンなどのフイルムが挙げられる。これらの厚さは、通常
30〜500μm、好ましくは40〜300μmであ
る。
Such a film substrate includes polyethylene, polypropylene, ethylene-propylene copolymer,
Polyvinyl chloride, polyethylene terephthalate, polybutylene terephthalate, ethylene-vinyl acetate copolymer, polybutene-1, poly-4-methylpentene-1,
Films such as ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer, polyurethane, polymethylpentene, polybutadiene and the like can be mentioned. Their thickness is usually 30 to 500 μm, preferably 40 to 300 μm.

【0030】本発明において、上記構成の粘着シ―ト類
を用いて、半導体ウエハの加工を行うには、まず、半導
体ウエハの表面または裏面に、上記構成の粘着シ―ト類
を貼り付け、この状態で、常法によりウエハ裏面の研削
加工、ダイシング加工などの所要のウエハ加工を施せば
よい。その際、上記粘着シ―ト類が大きな粘着力を有す
るため、加工中に剥離などの支障をきたさず、所望の加
工目的を達成でき、またウエハの破損などの不都合を生
じることもない。
In the present invention, in order to process a semiconductor wafer using the adhesive sheet having the above structure, first, the adhesive sheet having the above structure is attached to the front or back surface of the semiconductor wafer. In this state, necessary wafer processing such as grinding and dicing of the back surface of the wafer may be performed by a conventional method. At this time, since the above-mentioned adhesive sheets have a large adhesive strength, there is no trouble such as peeling during processing, a desired processing purpose can be achieved, and no inconvenience such as breakage of the wafer occurs.

【0031】この加工後、粘着シ―ト類のフイルム基材
側から、光(紫外線)、電子線などの放射線を照射し
て、上記粘着シ―ト類の放射線硬化型粘着剤層を硬化さ
せる。この硬化により粘着力が著しく低下するため、ウ
エハより上記粘着シ―ト類を容易に剥離でき、ダイシン
グ加工ではその後のピツクアツプ作業を容易に行える。
しかも、上記硬化後に強い臭気を発生することがなく、
作業者に不快な気持ちをいだかせたり、健康衛生上の問
題を引き起こす心配はない。また、剥離後に糊残りによ
るミクロンオ―ダまたはサブミクロンオ―ダの汚染がみ
られず、したがつて、従来のようなウエハ裏面の上記汚
染に起因したチツプ裏面と封止樹脂との境界での剥離な
どの不都合を招くこともない。
After the processing, the radiation-curable pressure-sensitive adhesive layer of the pressure-sensitive adhesive sheet is cured by irradiating radiation such as light (ultraviolet light) or an electron beam from the film substrate side of the pressure-sensitive adhesive sheet. . Since the adhesive force is remarkably reduced by this curing, the above-mentioned adhesive sheets can be easily peeled off from the wafer, and the subsequent pick-up operation can be easily performed in the dicing process.
Moreover, no strong odor is generated after the curing,
There is no worry about causing workers unpleasant feelings or causing health and hygiene problems. In addition, no contamination of the micron order or submicron order due to the adhesive residue after peeling was observed, and therefore, the peeling at the boundary between the chip back surface and the sealing resin due to the above-described contamination of the wafer back surface as in the conventional case, etc. There is no inconvenience.

【0032】[0032]

【実施例】つぎに、本発明の実施例を記載して、より具
体的に説明する。なお、以下において、部とあるのは重
量部を意味するものとする。
Next, an embodiment of the present invention will be described in more detail. In the following, “parts” means “parts by weight”.

【0033】実施例1 アクリル酸n−ブチル80部、アクリル酸エチル15部
およびアクリル酸5部からなるモノマ―混合物を、酢酸
エチル150部およびアゾイソブチロニトリル0.1部
を用いて、窒素気流下60℃にて12時間溶液重合を行
い、重量平均分子量が56万のアクリル系ポリマ―溶液
Aを得た。
Example 1 A monomer mixture consisting of 80 parts of n-butyl acrylate, 15 parts of ethyl acrylate and 5 parts of acrylic acid was treated with 150 parts of ethyl acetate and 0.1 part of azoisobutyronitrile under nitrogen. Solution polymerization was carried out at 60 ° C. for 12 hours under an air stream to obtain an acrylic polymer solution A having a weight average molecular weight of 560,000.

【0034】この溶液Aに、アクリル系ポリマ―100
部に対し、放射線重合性化合物としてウレタンアクリレ
―ト100部、架橋剤としてポリイソシアネ―ト化合物
2部およびエポキシ系化合物0.5部、ポリマ―化した
光重合開始剤として市販品である「ESACURE K
IP150」(シ―ベルヘグナ―販売元)3部を、均一
に混合して、放射線硬化型粘着剤溶液を調製した。
In this solution A, an acrylic polymer 100 was used.
Parts, 100 parts of urethane acrylate as a radiation polymerizable compound, 2 parts of a polyisocyanate compound and 0.5 part of an epoxy compound as a crosslinking agent, and "ESACURE" which is a commercially available photopolymerization initiator. K
IP150 "(Siebel Hegner-Distributor) was mixed uniformly to prepare a radiation-curable pressure-sensitive adhesive solution.

【0035】この放射線硬化型粘着剤溶液を、厚さが5
0μmのポリエステルフイルムからなるセパレ―タの片
面に、乾燥後の厚さが30μmとなるように塗布し、1
20℃で3分乾燥したのち、厚さが100μmのポリエ
チレンフイルムからなるフイルム基材にラミネ―トし
て、半導体ウエハ加工用粘着シ―トを作製した。
The radiation-curable pressure-sensitive adhesive solution having a thickness of 5
One side of a separator made of a 0 μm polyester film is applied so that the thickness after drying becomes 30 μm.
After drying at 20 ° C. for 3 minutes, the resultant was laminated on a 100 μm-thick polyethylene film base material to prepare an adhesive sheet for processing a semiconductor wafer.

【0036】実施例2 実施例1のアクリル系ポリマ―溶液Aに、アクリル系ポ
リマ―100部に対し、放射線重合性化合物としてペン
タエリスリト―ルヘキサアクリレ―ト80部、架橋剤と
してトリレンジイソシアネ―ト3部、ポリマ―化した光
重合開始剤(実施例1と同じもの)5部を、均一に混合
して、放射線硬化型粘着剤溶液を調製した。また、これ
を用いて実施例1と同様にして、半導体ウエハ加工用粘
着シ―トを作製した。
Example 2 In the acrylic polymer solution A of Example 1, 80 parts of pentaerythritol hexaacrylate as a radiation-polymerizable compound and 100 parts of acrylic polymer per 100 parts of an acrylic polymer, and tolylene diisocyanate as a crosslinking agent were used. 3 parts and 5 parts of a polymerized photopolymerization initiator (the same as in Example 1) were uniformly mixed to prepare a radiation-curable pressure-sensitive adhesive solution. Further, an adhesive sheet for processing a semiconductor wafer was prepared in the same manner as in Example 1 using this.

【0037】実施例3 アクリル酸2−エチルヘキシル30部、アクリル酸メチ
ル70部およびアクリル酸10部からなるモノマ―混合
物を、酢酸エチル200部およびベンゾイルパ―オキサ
イド0.2部を用いて、窒素気流下60℃にて12時間
溶液重合を行い、重量平均分子量が80万のアクリル系
ポリマ―溶液Bを得た。
Example 3 A monomer mixture consisting of 30 parts of 2-ethylhexyl acrylate, 70 parts of methyl acrylate and 10 parts of acrylic acid was mixed with 200 parts of ethyl acetate and 0.2 parts of benzoyl peroxide in a nitrogen stream. Solution polymerization was performed at 60 ° C. for 12 hours to obtain an acrylic polymer solution B having a weight average molecular weight of 800,000.

【0038】この溶液Bに、アクリル系ポリマ―100
部に対し、放射線重合性化合物としてペンタエリスリト
―ルテトラアクリレ―ト50部、架橋剤としてトリレン
ジイソシアネ―ト3部、ポリマ―化した光重合開始剤と
して市販品である「ESACURE KIP100」
(シ―ベルヘグナ―販売元)5部を、均一に混合して、
放射線硬化型粘着剤溶液を調製した。また、これを用い
て実施例1と同様にして、半導体ウエハ加工用粘着シ―
トを作製した。
In this solution B, an acrylic polymer 100 was added.
Parts by weight, 50 parts of pentaerythritol tetraacrylate as a radiation polymerizable compound, 3 parts of tolylene diisocyanate as a cross-linking agent, and "ESACURE KIP100" which is a commercially available photopolymerization initiator.
(Siebel Hegner-Distributor) 5 parts, mix evenly,
A radiation-curable pressure-sensitive adhesive solution was prepared. Further, the adhesive sheet for processing a semiconductor wafer was used in the same manner as in Example 1 using this.
Was made.

【0039】実施例4 実施例3のアクリル系ポリマ―溶液Bに、アクリル系ポ
リマ―100部に対し、放射線重合性化合物としてウレ
タンアクリレ―ト120部、架橋剤としてトリレンジイ
ソシアネ―ト3部、ポリマ―化した光重合開始剤(実施
例3と同じもの)5部を、均一に混合して、放射線硬化
型粘着剤溶液を調製した。また、これを用いて実施例1
と同様にして、半導体ウエハ加工用粘着シ―トを作製し
た。
Example 4 In the acrylic polymer solution B of Example 3, based on 100 parts of the acrylic polymer, 120 parts of urethane acrylate as a radiation polymerizable compound and tolylene diisocyanate 3 as a crosslinking agent were used. , And 5 parts of a polymerized photopolymerization initiator (the same as in Example 3) were uniformly mixed to prepare a radiation-curable pressure-sensitive adhesive solution. In addition, Example 1
In the same manner as in the above, an adhesive sheet for processing a semiconductor wafer was produced.

【0040】比較例1 ポリマ―化した光重合開始剤3部に代えて、α−ヒドロ
キシシクロヘキシルフエニルケトン(分子量204.
3)10部を用いた以外は、実施例1と同様にして、放
射線硬化型粘着剤溶液を調製した。また、これを用いて
実施例1と同様にして、半導体ウエハ加工用粘着シ―ト
を作製した。
Comparative Example 1 α-Hydroxycyclohexylphenyl ketone (molecular weight: 204.20) was used in place of 3 parts of the polymerized photopolymerization initiator.
3) A radiation-curable pressure-sensitive adhesive solution was prepared in the same manner as in Example 1, except that 10 parts were used. Further, an adhesive sheet for processing a semiconductor wafer was prepared in the same manner as in Example 1 using this.

【0041】比較例2 ポリマ―化した光重合開始剤5部に代えて、α−ヒドロ
キシシクロヘキシルフエニルケトン(分子量204.
3)5部を用いた以外は、実施例2と同様にして、放射
線硬化型粘着剤溶液を調製した。また、これを用いて実
施例1と同様にして、半導体ウエハ加工用粘着シ―トを
作製した。
Comparative Example 2 α-Hydroxycyclohexylphenyl ketone (molecular weight: 204.20) was used in place of 5 parts of the polymerized photopolymerization initiator.
3) A radiation-curable pressure-sensitive adhesive solution was prepared in the same manner as in Example 2, except that 5 parts were used. Further, an adhesive sheet for processing a semiconductor wafer was prepared in the same manner as in Example 1 using this.

【0042】比較例3 ポリマ―化した光重合開始剤5部に代えて、2,4−ジ
エチルチオキサントン(分子量250)5部を用いた以
外は、実施例3と同様にして、放射線硬化型粘着剤溶液
を調製した。また、これを用いて実施例1と同様にし
て、半導体ウエハ加工用粘着シ―トを作製した。
Comparative Example 3 A radiation-curable adhesive was prepared in the same manner as in Example 3, except that 5 parts of 2,4-diethylthioxanthone (molecular weight: 250) was used instead of 5 parts of the polymerized photopolymerization initiator. An agent solution was prepared. Further, an adhesive sheet for processing a semiconductor wafer was prepared in the same manner as in Example 1 using this.

【0043】比較例4 ポリマ―化した光重合開始剤5部に代えて、2,4−ジ
エチルチオキサントン(分子量250)10部を用いた
以外は、実施例4と同様にして、放射線硬化型粘着剤溶
液を調製した。また、これを用いて実施例1と同様にし
て、半導体ウエハ加工用粘着シ―トを作製した。
Comparative Example 4 A radiation-curable adhesive was prepared in the same manner as in Example 4 except that 10 parts of 2,4-diethylthioxanthone (molecular weight: 250) was used instead of 5 parts of the polymerized photopolymerization initiator. An agent solution was prepared. Further, an adhesive sheet for processing a semiconductor wafer was prepared in the same manner as in Example 1 using this.

【0044】以上の実施例1〜4および比較例1〜4の
各半導体ウエハ加工用粘着シ―トについて、放射線照射
による硬化後の臭気発生の有無と、半導体ウエハに貼り
付けて放射線を照射したのちに剥離したときのウエハ汚
染性を、下記の方法により、調べた。結果は、表1に示
されるとおりであつた。
The adhesive sheets for processing semiconductor wafers of Examples 1 to 4 and Comparative Examples 1 to 4 described above were used to determine whether or not odor was generated after curing by irradiation of radiation, and to apply the radiation to the semiconductor wafer. The wafer contamination when peeled later was examined by the following method. The results were as shown in Table 1.

【0045】<臭気およびウエハ汚染性の測定>半導体
ウエハ加工用粘着シ―トを、セパレ―タを剥がして、4
インチミラ―ウエハに貼り付け、1時間静置し、高圧水
銀ランプ〔日東電工(株)製の紫外線照射装置UM−1
10、照射強度46mJ/cm2 ・秒〕を用いて、10秒
間、紫外線を照射して(照射量460mJ/cm2 )、粘
着剤層を硬化させた。
<Measurement of Odor and Wafer Contamination> The adhesive sheet for processing a semiconductor wafer was peeled off from the separator to remove
Affixed to an inch mirror wafer, allowed to stand for 1 hour, and a high-pressure mercury lamp [Nitto Denko Corporation UV irradiator UM-1
10, the irradiation intensity was 46 mJ / cm 2 · sec], and the ultraviolet ray was irradiated for 10 seconds (irradiation amount: 460 mJ / cm 2 ) to cure the pressure-sensitive adhesive layer.

【0046】硬化後の臭気発生の有無を調べ、臭気が感
じられない場合を○、強い臭気を感じる場合を×、と評
価した。また、硬化後に粘着シ―トをウエハより剥離し
て、レ―ザ―表面検査装置〔日立電子エンジニアリング
(株)製のLS−5000〕にて、ミラ―ウエハ上に残
留する0.28μm以上のパ―テイクルの数を調べ、こ
の数が10個以下であれば、ウエハ汚染性が低いと評価
した。
The presence or absence of odor after curing was examined. The case where no odor was felt was evaluated as ○, and the case where strong odor was felt was evaluated as x. After curing, the adhesive sheet was peeled off from the wafer, and a laser surface inspection device (LS-5000, manufactured by Hitachi Electronics Engineering Co., Ltd.) was used to remove 0.28 μm or more of the adhesive sheet remaining on the mirror wafer. The number of particles was examined, and if the number was 10 or less, it was evaluated that wafer contamination was low.

【0047】 [0047]

【0048】上記の表1の結果から明らかなように、本
発明の実施例1〜4の半導体ウエハ加工用粘着シ―ト
は、紫外線照射による硬化後の臭気発生がみられず、し
かも、ウエハ汚染性が非常に低いものであることがわか
る。また、上記試験とは別に、実施例1〜4の各半導体
ウエハ加工用粘着シ―トを用いて、実際に半導体ウエハ
の研削加工やダイシング加工を行つたところ、常態での
粘着力が大きいため、加工中に剥離などの支障をきたさ
ず、また加工後に紫外線を照射して剥離すると、ウエハ
の破損などを生じることなく容易に剥離できた。その
際、紫外線照射後の臭気は感じられず、ウエハの非汚染
性も満足できることが判明した。
As is evident from the results shown in Table 1, the adhesive sheets for processing semiconductor wafers of Examples 1 to 4 of the present invention did not show any odor after being cured by irradiation with ultraviolet rays. It can be seen that the contamination is very low. In addition to the above test, when the semiconductor wafer was actually ground or diced using the semiconductor wafer processing adhesive sheets of Examples 1 to 4, the adhesive strength under normal conditions was large. In addition, there was no trouble such as peeling during processing, and when peeling was performed by irradiating ultraviolet rays after processing, the wafer could be easily peeled without damaging the wafer. At that time, no odor after ultraviolet irradiation was felt, and it was found that the non-staining property of the wafer was satisfactory.

【0049】[0049]

【発明の効果】以上のように、本発明によれば、研削加
工やダイシング加工などの加工時には大きな粘着力を示
して所期の加工目的を果たし、加工後剥離する際には放
射線の照射による硬化にてウエハの破損などを生じるこ
となく容易に剥離できるとともに、上記の硬化後に強い
臭気を発生せず、また糊残りによるミクロンオ―ダまた
はサブミクロンオ―ダの汚染がみられない、とくにウエ
ハ裏面の上記汚染に起因したチツプ裏面と封止樹脂との
境界での剥離などの心配のない、放射線硬化型の半導体
ウエハ加工用粘着シ―ト類を提供でき、また、これを用
いた半導体ウエハ加工方法を提供することができる。
As described above, according to the present invention, when processing such as grinding and dicing, a large adhesive force is exhibited, thereby achieving the intended processing purpose. It can be easily peeled off without causing damage to the wafer by curing, and it does not generate a strong odor after the above-mentioned curing, and no contamination of micron order or submicron order due to adhesive residue is observed. A radiation-curable adhesive sheet for processing a semiconductor wafer can be provided, which is free from the possibility of peeling at the boundary between the chip back surface and the sealing resin due to the contamination, and a semiconductor wafer processing method using the same. Can be provided.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 放射線透過性のフイルム基材の片面にポ
リマ―化した光重合開始剤を含有する放射線硬化型粘着
剤層が設けられてなることを特徴とする半導体ウエハ加
工用粘着シ―ト類。
1. A pressure-sensitive adhesive sheet for processing semiconductor wafers, wherein a radiation-curable pressure-sensitive adhesive layer containing a polymerized photopolymerization initiator is provided on one surface of a radiation-transmissive film base material. Kind.
【請求項2】 半導体ウエハに、請求項1に記載の半導
体ウエハ加工用粘着シ―ト類を貼り付けて、所要のウエ
ハ加工を施し、ついで、放射線の照射により上記粘着シ
―ト類の放射線硬化型粘着剤層を硬化させたのち、上記
粘着シ―ト類を剥離することを特徴とする半導体ウエハ
加工方法。
2. The adhesive sheet for processing a semiconductor wafer according to claim 1 is attached to a semiconductor wafer to perform required wafer processing, and then the radiation of the adhesive sheet is irradiated by irradiation of radiation. A method of processing a semiconductor wafer, comprising: after curing a curable pressure-sensitive adhesive layer, peeling off the pressure-sensitive adhesive sheets.
JP08177097A 1997-04-01 1997-04-01 Adhesive sheets for semiconductor wafer processing and processing methods Expired - Fee Related JP3909907B2 (en)

Priority Applications (1)

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JP08177097A JP3909907B2 (en) 1997-04-01 1997-04-01 Adhesive sheets for semiconductor wafer processing and processing methods

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP08177097A JP3909907B2 (en) 1997-04-01 1997-04-01 Adhesive sheets for semiconductor wafer processing and processing methods

Publications (2)

Publication Number Publication Date
JPH10279894A true JPH10279894A (en) 1998-10-20
JP3909907B2 JP3909907B2 (en) 2007-04-25

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Family Applications (1)

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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1108770A2 (en) 1999-12-14 2001-06-20 Nitto Denko Corporation Removable pressure-sensitive adhesive sheet
JP2003277521A (en) * 2002-03-20 2003-10-02 Nitto Denko Corp Photocrosslinking method
WO2006038547A1 (en) * 2004-10-01 2006-04-13 Toyo Ink Manufacturing Co., Ltd. Pressure-sensitive adhesive having its adherence lost by actinic energy radiation, adhesive sheet having its adherence lost by actinic energy radiation obtained by application of the pressure-sensitive adhesive, and process for producing etched metallic material
JP2006286808A (en) * 2005-03-31 2006-10-19 Furukawa Electric Co Ltd:The Wafer-working tape and method of working wafer using the same
JP2008189842A (en) * 2007-02-06 2008-08-21 Arakawa Chem Ind Co Ltd Active energy ray-curable self-adhesive composition
JP2009245989A (en) * 2008-03-28 2009-10-22 Lintec Corp Adhesive sheet for processing semiconductor wafer and utilization method therefor
JP2010189484A (en) * 2009-02-16 2010-09-02 Lintec Corp Adhesive composition, adhesive sheet and method for manufacturing semiconductor device
JP2011216734A (en) * 2010-03-31 2011-10-27 Furukawa Electric Co Ltd:The Adhesive sheet for processing semiconductor wafer
JP2011213922A (en) * 2010-03-31 2011-10-27 Furukawa Electric Co Ltd:The Adhesive sheet for semiconductor wafer processing
JP2013529693A (en) * 2010-06-22 2013-07-22 コロプラスト アクティーゼルスカブ Hydrophilic gel derived from grafted photoinitiator
JP2014209629A (en) * 2014-05-12 2014-11-06 古河電気工業株式会社 Pressure sensitive sheet for processing semiconductor wafer
JP2015008323A (en) * 2014-08-29 2015-01-15 古河電気工業株式会社 Dicing sheet
JP2015071718A (en) * 2013-10-04 2015-04-16 株式会社リコー Photopolymerizable composition, photopolymerizable inkjet ink, ink cartridge
JP2017088817A (en) * 2015-11-17 2017-05-25 日東電工株式会社 Adhesive sheet

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1108770A2 (en) 1999-12-14 2001-06-20 Nitto Denko Corporation Removable pressure-sensitive adhesive sheet
EP1108770A3 (en) * 1999-12-14 2003-07-09 Nitto Denko Corporation Removable pressure-sensitive adhesive sheet
JP2003277521A (en) * 2002-03-20 2003-10-02 Nitto Denko Corp Photocrosslinking method
WO2006038547A1 (en) * 2004-10-01 2006-04-13 Toyo Ink Manufacturing Co., Ltd. Pressure-sensitive adhesive having its adherence lost by actinic energy radiation, adhesive sheet having its adherence lost by actinic energy radiation obtained by application of the pressure-sensitive adhesive, and process for producing etched metallic material
JP2006286808A (en) * 2005-03-31 2006-10-19 Furukawa Electric Co Ltd:The Wafer-working tape and method of working wafer using the same
JP2008189842A (en) * 2007-02-06 2008-08-21 Arakawa Chem Ind Co Ltd Active energy ray-curable self-adhesive composition
JP2009245989A (en) * 2008-03-28 2009-10-22 Lintec Corp Adhesive sheet for processing semiconductor wafer and utilization method therefor
JP2010189484A (en) * 2009-02-16 2010-09-02 Lintec Corp Adhesive composition, adhesive sheet and method for manufacturing semiconductor device
JP2011216734A (en) * 2010-03-31 2011-10-27 Furukawa Electric Co Ltd:The Adhesive sheet for processing semiconductor wafer
JP2011213922A (en) * 2010-03-31 2011-10-27 Furukawa Electric Co Ltd:The Adhesive sheet for semiconductor wafer processing
JP2013529693A (en) * 2010-06-22 2013-07-22 コロプラスト アクティーゼルスカブ Hydrophilic gel derived from grafted photoinitiator
JP2015071718A (en) * 2013-10-04 2015-04-16 株式会社リコー Photopolymerizable composition, photopolymerizable inkjet ink, ink cartridge
JP2014209629A (en) * 2014-05-12 2014-11-06 古河電気工業株式会社 Pressure sensitive sheet for processing semiconductor wafer
JP2015008323A (en) * 2014-08-29 2015-01-15 古河電気工業株式会社 Dicing sheet
JP2017088817A (en) * 2015-11-17 2017-05-25 日東電工株式会社 Adhesive sheet

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