JPH07193032A - Manufacture of film for grinding rear surface of semiconductor wafer - Google Patents

Abstract

PURPOSE:To provide strong adhesion and to prevent the reduction of adhesion caused by the irradiation of ultraviolet rays and the contamination of the surface of a semiconductor wafer during the period when the rear surface of the semiconductor is ground. CONSTITUTION:This is a manufacturing method of a film for grinding the rear surface of a semiconductor wafer, wherein ultraviolet-ray hardening type adhesive agent is applied and dried on one surface of a light transmitting base- material film. The ultraviolet-ray type adhesive agent contains 100 weight parts of ester-acrylate-based double bond wherein photopolymerization carbon/carbon double bond is introduced in a molecule, 0.1-20 weight parts of low-molecular- weight compound having the two or more photopolymerization carbon/carbon double bond in a molecule and 5-15 weight parts of light initiating agent in this manufacturing method of the film for grinding the rear surface of the semiconductor wafer.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a film for grinding a back surface of a semiconductor wafer. More specifically, when grinding a surface of a silicon wafer or the like on which a semiconductor integrated circuit is not incorporated (hereinafter referred to as a semiconductor wafer back surface), a surface on which a semiconductor integrated circuit is incorporated (hereinafter referred to as a semiconductor wafer front surface). The present invention relates to a method for manufacturing a film for grinding a back surface of a semiconductor wafer, which is used for preventing damage and contamination of the wafer.

[0002]

2. Description of the Related Art Normally, a semiconductor wafer is prepared by slicing a high-purity silicon single crystal or the like into a wafer, incorporating an integrated circuit by etching or the like, and further grinding the back surface of the wafer with a grinder to form a wafer. Thickness is 100 ~ 600μm
It is manufactured by a method of dicing into chips after thinning to a certain degree. Among these steps, in the step of grinding the back surface of the semiconductor wafer, the surface of the semiconductor wafer is protected from debris such as silicon and the pure water sprayed for lubrication, cooling water, and silicon debris removal during grinding, and A film for grinding the back surface of a semiconductor wafer is used to prevent damage. A water-based emulsion type adhesive or a solvent type adhesive has been used as an adhesive applied to the film for grinding the back surface of a semiconductor wafer.

In recent years, along with the miniaturization of semiconductor chips, there has been an increasing tendency to make semiconductor wafers thinner, and the thickness of semiconductor wafers after grinding in the past has been about 250 to 400 μm, but is becoming less than 200 μm. On the other hand, the diameter of wafers is increasing, and the size is becoming 8 inches or more. Therefore, when a conventionally known wafer back surface grinding film is used, when the wafer back surface grinding film is peeled from the surface of the semiconductor wafer, the adhesive force of the wafer back surface grinding film becomes too strong and the semiconductor wafer is damaged. Is occurring. On the other hand, if the adhesive force of the semiconductor wafer backside grinding film is weakened, water will infiltrate between the semiconductor wafer and the wafer backside grinding film when the backside is ground, and the film will peel off,
After all, the problem that the semiconductor wafer is damaged occurs.

In order to solve these problems, there has been proposed a method of using a photocurable adhesive as an adhesive for the wafer backside grinding film. For example, Japanese Patent Laid-Open No. 60-1899
No. 38 discloses a method of protecting a semiconductor wafer, in which a back surface of a semiconductor wafer is ground, a pressure-sensitive adhesive film is attached to the front surface of the wafer, and the adhesive film is peeled off after the grinding. The film is composed of a light-transmissive support and a pressure-sensitive adhesive layer provided on the support and having a property of being cured by light irradiation to form a three-dimensional reticulation, and after grinding, before peeling the adhesive film, A method for protecting a semiconductor wafer is described in which an adhesive film is irradiated with light.

As a pressure-sensitive adhesive having the property of being cured by light irradiation to form a three-dimensional network, a base polymer such as an acrylic polymer is blended with a crosslinking agent such as a polyisocyanate compound or an alkyl etherified melamine compound. Is used, and that the base polymer may have a photopolymerizable carbon-carbon double bond in the molecule, and the photopolymerizable compound has a molecular weight of 10,000 or less. Examples include trimethylolpropane triacrylate and tetramethylolmethane tetraacrylate. Further, it is described that it is preferable that the pressure-sensitive adhesive contains 0.1 to 5 parts by weight of a photoinitiator such as isopropyl benzoin ether and Veszophenone based on 100 parts by weight of the base polymer.

However, the photo-curable pressure-sensitive adhesive used in this method has a certain degree of decrease in tackiness upon irradiation with light, but since the amount of the photopolymerization initiator added is small, the curing speed of the pressure-sensitive adhesive due to irradiation with light is high. There is a drawback that it is slow and the decrease in adhesive strength is insufficient. As a method to solve this drawback,
A method of increasing the addition amount of the compound having a photopolymerizable carbon-carbon double bond in the molecule is conceivable. However, when the addition amount of the photopolymerizable compound is increased, the cohesive force of the pressure-sensitive adhesive is reduced and the cohesion is reduced. This is not a preferable method because it causes contamination of the semiconductor wafer surface due to destruction.

Further, Japanese Patent Application Laid-Open No. 5-32946 discloses that
The side chain or main chain of the polymer is bound to a polyfunctional monomer or oligomer having a radiation-polymerizable functional group, and the radiation-polymerizable functional group has two or more carbon-carbon double bonds, A removable pressure-sensitive adhesive polymer is disclosed which has a volume shrinkage ratio of 0.5% or more.

Then, as the polymer to be the main chain,
Illustrative are acrylic polymers such as homopolymers and copolymers having an acrylic ester as a main constituent monomer unit, and radiation-polymerizable by being introduced into the side chain or main chain of the acrylic polymer. Pentaerythritol diacrylate, pentaerythritol triacrylate and the like are exemplified as the polyfunctional monomer or oligomer for deriving a functional group. Further, when the radiation is ultraviolet rays, it is possible to reduce the polymerization and curing time by ultraviolet ray irradiation and the amount of ultraviolet ray irradiation by adding an ultraviolet initiator such as benzoin or benzoin methyl ether to the removable adhesive polymer. Have been described. Further, it is described that the releasable adhesive polymer is used for an adhesive layer of a pressure-sensitive adhesive sheet for wafer dicing, which is used when a semiconductor wafer is cut (dicing) and separated into element pieces and the element pieces are picked up. . However, as for the specific composition of the removable pressure-sensitive adhesive polymer, only one example is described in Examples, and a suitable composition when used as an adhesive for a pressure-sensitive adhesive sheet for dicing a semiconductor wafer or for backside grinding is specified. Not not.

The performance of the UV-curable pressure-sensitive adhesive used for the film for grinding the back surface of a semiconductor wafer is influenced by the pressure-sensitive adhesive composition such as the amount of photopolymerizable functional group, the amount of thermal crosslinking agent, and the amount of photoinitiator. , The adhesive force during grinding of the back surface of the wafer, the curing speed of the adhesive at the time of ultraviolet irradiation, the adhesive force after ultraviolet irradiation, the peelability from the wafer surface, the non-contaminating property of the wafer surface, and the like. In particular, the amount of the photopolymerizable functional group and the amount of the photoinitiator affect the curing speed at the time of UV irradiation, the adhesive force after the UV irradiation, and also the non-contamination property of the surface of the semiconductor wafer.

The film for grinding the back surface of a semiconductor wafer is used to prevent damage and contamination of the wafer when grinding the back surface of the semiconductor wafer, and also when the film is peeled off. Considering that the damage should not occur, it is desirable that the semiconductor wafer has a strong adhesive force when the back surface is ground and the adhesive force is reduced when peeling. Further, it is desirable that the surface of the semiconductor wafer is not contaminated. Under such circumstances, there is a strong demand for a method for producing a film for backside grinding of a semiconductor wafer in which the pressure sensitive adhesive composition is appropriately controlled.

[0011]

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and its purpose is to provide a strong adhesive force while grinding the back surface of a semiconductor wafer. However, it is another object of the present invention to provide a method for manufacturing a film for grinding a back surface of a semiconductor wafer, which does not reduce the adhesive force due to irradiation of ultraviolet rays when peeling and does not contaminate the surface of the semiconductor wafer.

[0012]

Means for Solving the Problems As a result of intensive studies for solving the above problems, the present inventors have found that a photopolymerizable carbon-carbon is preliminarily added to an acrylic ester copolymer which is a main polymer of an adhesive. It was found that the above object can be achieved by introducing a double bond and setting the addition amount of a low molecular weight compound having two or more photopolymerizable carbon-carbon double bonds and a photoinitiator within a specific range, The present invention has been reached.

That is, the gist of the present invention is a method for producing a film for grinding a back surface of a semiconductor wafer, which comprises applying an ultraviolet-curable adhesive to one surface of a light-transmitting base film and drying the adhesive. Is an acrylic acid ester-based copolymer 10 having a photopolymerizable carbon-carbon double bond introduced into the molecule.
0 parts by weight, 0.1 to 20 parts by weight of a low molecular weight compound having two or more photopolymerizable carbon-carbon double bonds in the molecule, and 5 to 15 parts by weight of a photoinitiator, the backside of a semiconductor wafer. It is a method of manufacturing a film for grinding.

The feature of the present invention is that (1) the base polymer of the UV-curable pressure-sensitive adhesive is an acrylate copolymer in which a photopolymerizable carbon-carbon double bond is previously introduced, and (2) ) The amount of the low molecular weight compound having two or more photopolymerizable carbon-carbon double bonds and the amount of the photoinitiator in the ultraviolet-curable pressure-sensitive adhesive are set to be in a specific range.
In particular, the point is that the above (1) and (2) are combined.

By adopting the configuration of (1) above,
The addition amount of the low molecular weight compound having two or more photopolymerizable carbon-carbon double bonds in the molecule can be reduced, and the decrease in the cohesive force of the pressure-sensitive adhesive can be prevented. Further, by adopting the configuration of (2) above, it is possible to prevent a decrease in the ultraviolet curing rate due to the decrease in the addition amount of the low molecular weight compound having two or more photopolymerizable carbon-carbon double bonds in the molecule. You can As a synergistic effect of the above (1) and (2), it has a moderately strong adhesive force when the back surface of a semiconductor wafer is ground, and the adhesive force is reduced when peeling after irradiation with ultraviolet rays, resulting in peelability. And a film for grinding a back surface of a semiconductor wafer which does not contaminate the surface of the semiconductor wafer.

The present invention will be described in detail below. Not only silicon wafers but also germanium, gallium-arsenic, gallium-phosphorus, gallium-arsenic-aluminum, etc. can be used as wafers to be used for the film for grinding a back surface of a semiconductor wafer having a radiation-curable pressure-sensitive adhesive layer produced by the present invention. Wafers.

The film for grinding a back surface of a semiconductor wafer having an ultraviolet-curable pressure-sensitive adhesive layer produced by the present invention is attached to the front surface of a semiconductor wafer in which an integrated circuit is incorporated in the above wafer, and the back surface of the semiconductor wafer is ground using a grinder. It is used to prevent damage to the semiconductor wafer and contamination of the surface of the semiconductor wafer during grinding. Such a semiconductor wafer backside grinding film is produced by applying an ultraviolet-curable adhesive to one surface of a light-transmitting base film and drying it. Usually, the adhesive is used to protect the adhesive layer. A release film is applied to the surface of the layer.

Examples of the light-transmitting base film used in the present invention include ethylene-vinyl acetate copolymer films, plastic films such as polybutadiene, polyethylene terephthalate, polyethylene, polypropylene and polyvinyl chloride, and natural rubber films. Of these, ethylene-vinyl acetate copolymer film and polybutadiene film are preferable.

The thickness of the substrate film is appropriately determined depending on the shape of the semiconductor wafer to be protected, the surface condition and the method of grinding the back surface of the semiconductor wafer, but is usually 10 to 2000 μm. More preferably, it is 100 to 300 μm.

The substrate film can be laminated with another film in order to improve the workability of attaching to the surface of the semiconductor wafer and the workability at the time of peeling. The film to be laminated also needs to transmit ultraviolet rays, and the thickness thereof is appropriately determined depending on the shape of the semiconductor wafer to be protected, the surface state, the grinding method of the back surface of the semiconductor wafer, and the thickness of the laminated base material film,
Usually, 10 to 1000 μm is preferable. More preferably, it is 10 to 100 μm. In the present invention, the fact that the substrate film has light transmittance means that the total light transmittance is 30% or more, preferably 70% or more.

As a laminating method, a method such as bonding with an adhesive, coextrusion, corona discharge treatment and pressure bonding, etc.
Known methods are used as appropriate.

Considering the prevention of damage to the semiconductor wafer when the back surface of the semiconductor wafer is ground, it is preferable that the base material film is highly flexible. Specifically, ASTM-D-22
A film having a Shore D type hardness of 40 or less defined by 40 is preferable. Further, in consideration of workability of sticking to the surface of the semiconductor wafer, workability of peeling from the surface of the semiconductor wafer, etc., the film laminated on the substrate film is preferably a hard film having a Shore D type hardness of more than 40.

The UV-curable pressure-sensitive adhesive used in the present invention contains a specific amount of a photopolymerizable carbon-carbon double bond in the molecule in an acrylic acid ester copolymer having a photopolymerizable carbon-carbon double bond introduced therein. A low molecular weight compound having two or more of them and a specific amount of a photopolymerization initiator. The photopolymerizable carbon-carbon double bond-introduced acrylic acid ester copolymer is prepared by mixing and copolymerizing a monomer having an ethylenic double bond and a copolymerizable monomer having a functional group, and the copolymerization It is obtained by reacting with a monomer containing a photopolymerizable carbon-carbon double bond having a group capable of reacting with a functional group such as a carboxyl group, a hydroxyl group and a glycidyl group contained in the polymer.

Specifically, examples of the monomer having an ethylenic double bond include acrylic acid ester monomers such as methyl methacrylate, 2-ethylhexyl acrylate, butyl acrylate and ethyl acrylate, and vinyl acetate. Examples thereof include vinyl ester, acrylonitrile, acrylamide, styrene and the like. These may be used alone or in combination of two or more. Also,
As the copolymerizable monomer having the above functional group, (meth)
Acrylic acid, maleic acid, 2-hydroxyethyl (meth) acrylate, glycidyl (meth) acrylate,
N-methylol (meth) acrylamide etc. are mentioned. These may be used alone or in combination of two or more.

The ratio of the monomer having an ethylenic double bond to the copolymerizable monomer having a functional group is 70
The latter is preferably 30 to 1 part by weight with respect to ˜99 parts by weight.
More preferably, the former is 80 to 95 parts by weight, and the latter is 20 to 5 parts by weight. Within this range, the photopolymerizable carbon-carbon double bond can be easily introduced into the acrylate copolymer.

As a method for introducing a photopolymerizable carbon-carbon double bond into a copolymer of a monomer having an ethylenic double bond and a copolymerizable monomer having a functional group, the method of introducing a photopolymerizable carbon-carbon double bond into the copolymer is used. Carboxyl group, hydroxyl group,
A photoreactive monomer having a photopolymerizable carbon-carbon double bond having a group capable of reacting with a functional group such as a glycidyl group may be copolymerized. For example, as a combination of these functional groups, a carboxyl group and an epoxy group may be used. A combination such as a group, a carboxyl group and an aziridyl group, a hydroxyl group and an isocyanate group, which easily causes an addition reaction, is desirable. Further, not limited to the addition reaction, any reaction may be used as long as it is a reaction capable of easily introducing a photopolymerizable carbon-carbon double bond, such as a condensation reaction between a carboxylic acid group and a hydroxyl group.

As the low molecular weight compound having two or more photopolymerizable carbon-carbon double bonds in the molecule used in the present invention,
Tripropylene glycol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetraacrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate,
Examples thereof include dipentaerythritol hexa (meth) acrylate. These may use 1 type (s) or 2 or more types. The molecular weight of these is preferably 10,000 or less. More preferably, it is 5,000 or less.

The addition amount of the above-mentioned low molecular weight compound affects the cohesive force of the obtained UV-curable pressure-sensitive adhesive, the degree of curing by UV irradiation, the curing rate, etc., and thus also the non-contaminating property of the surface of the semiconductor wafer. Therefore, it is desirable to reduce it as much as possible. From this point of view, the addition amount of the low molecular weight compound is 0.1% with respect to 100 parts by weight of the copolymer.
1 to 20 parts by weight is preferable. Furthermore, preferably 0.1
10 to 10 parts by weight.

As the photoinitiator used in the present invention, benzoin, isopropylbenzoin ether, isobutylbenzoin ether, benzophenone, Michler's ketone,
Chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, acetophenone diethyl ketal, benzyl dimethyl ketal, 1-hydroxycyclohexyl phenyl ketone, 2
-Hydroxy-2-methyl-1-phenylpropane-1
-ON and the like. You may use these 1 type (s) or 2 or more types.

The amount of the photoinitiator added is such that the above copolymer 100 is added.
5 to 15 parts by weight, preferably 5
10 to 10 parts by weight. If the amount is less than 5 parts by weight, the decrease in adhesive strength due to irradiation with ultraviolet rays cannot be sufficiently achieved. Also, 15
If it exceeds the weight part, the cohesive force before curing is reduced, which causes contamination of the surface of the semiconductor wafer. Further, in consideration of prevention of contamination of the surface of the semiconductor wafer, the total amount of the low molecular weight compound having two or more photopolymerizable carbon-carbon double bonds in the molecule and the photoinitiator is 25 parts by weight or less. It is preferable.

A crosslinking agent may be added to the UV-curable pressure-sensitive adhesive used in the present invention. As a crosslinking agent, epoxy compounds such as sorbitol polyglycidyl ether, poly-glycerol polyglycidyl ether, pentaerythritol polyglycidyl ether, diglycerol polyglycidyl ether, tetramethylolmethane-tri-β-aziridinylpropionate, trimethylolpropane −
Tri-β-aziridinyl propionate, N, N′-diphenylmethane-4,4′-bis (1-aziridinecarboxamide), N, N′-hexamethylene-1,6-
Examples thereof include aziridine compounds such as bis (1-aziridinecarboxamide), and isocyanate compounds such as tetramethylene diisocyanate, hexamethylene diisocyanate and polyisocyanate.

The UV-curable pressure-sensitive adhesive used in the present invention can be obtained by blending the above compounds. A solvent or water is added to adjust the concentration or viscosity, or an additive such as a thermal polymerization inhibitor is added. Can also be added.

The UV-curable pressure-sensitive adhesive can be produced by either solution polymerization in the presence of an organic solvent such as toluene or ethyl acetate, or aqueous emulsion polymerization.

Examples of the method for applying the ultraviolet-curable adhesive to the base film include known coating methods such as reverse roll coater, gravure coater, bar coater, die coater and comma coater. It may be applied to the entire surface or a part of the base film. The drying condition is not particularly limited, but at 80 to 200 ° C for 10 seconds to
It is preferable to dry for 10 minutes. The coating thickness of the UV-curable pressure-sensitive adhesive is usually about 1 to 100 μm after drying. It is preferably about 5 to 50 μm.

Further, it is preferable to attach a synthetic resin film called a separator (release film) to the surface of the pressure-sensitive adhesive layer in order to protect the pressure-sensitive adhesive layer, if necessary.

[0036]

EXAMPLES The present invention will be described in more detail below with reference to examples. The adhesive strength and the degree of contamination on the surface of the semiconductor wafer in the examples were evaluated by the following methods. Ultraviolet irradiation conditions Irradiator: Oak Manufacturing Co., Ltd., OHD-320M type Irradiation conditions: Distance: 20 cm, time: 10 seconds

Amount of foreign matter adhered When a semiconductor wafer grinding film having an ultraviolet-curable adhesive layer is attached to the surface of a 4-inch silicon mirror wafer on which no foreign matter is adhered, the temperature is 23 ± 2 ° C., and the relative humidity is After being left in an atmosphere adjusted to 50 ± 5% for 1 hour, the film is peeled from the surface of the mirror wafer after being irradiated with ultraviolet rays from the back surface. Regarding the silicon mirror wafer after the film peeling, laser surface inspection device (LS-, manufactured by Hitachi Electronics Engineering Co., Ltd.)
6000) is used to rule out foreign matter of 0.1 μm or more remaining on the peeled surface.

Method of Measuring Adhesive Strength With a semiconductor wafer grinding film having an ultraviolet-curable adhesive layer adhered to a SUS304-BA plate, the temperature was adjusted to 23 ± 2 ° C. and the relative humidity was adjusted to 50 ± 5%. It is left in the atmosphere for 1 hour, and ultraviolet rays are irradiated from the back surface under the above conditions. The adhesive force (g / 25 mm) before and after irradiation with ultraviolet rays is measured under the following conditions and converted into an adhesive force of a film width of 25 mm. Peeling speed: 300 mm / min. Peeling angle: 180 degree Adherent: SUS304-BA plate Width of sample film: 50 mm

Amount of residual adhesive on the surface of the semiconductor wafer An IC silicon semiconductor wafer (4 inches) in which a pattern is printed on a semiconductor wafer grinding film having an ultraviolet-curable adhesive layer and a pattern is actually printed through the adhesive layer Attach it to the surface of the wafer. When attached, the temperature is 23 ± 2 ° C and the relative humidity is 50 without UV irradiation.
After left in an atmosphere adjusted to ± 5% for 1 day, the semiconductor wafer grinding film is peeled off. For the other samples, the film for grinding a semiconductor wafer is peeled off after being irradiated with the ultraviolet rays under the above conditions. For samples with and without UV irradiation,
The surface of the IC silicon semiconductor wafer after peeling the film is observed with an optical microscope (magnification 400 times), and the diameter is 50 μm.
The presence or absence of the above residual adhesive is observed. The evaluation criteria are as follows. No residual adhesive: no adhesive having a diameter of 50 μm or more is observed. With residual adhesive: One or more adhesives with a diameter of 50 μm or more are observed.

Example 1 48 parts by weight of ethyl acrylate, 27 parts by weight of 2-ethylhexyl acrylate, 20 parts by weight of methyl acrylate, 5 parts by weight of glycidyl methacrylate and 0.5 part by weight of benzoyl peroxide as a polymerization initiator were mixed. Then, the mixture was dropped into a nitrogen-substituted flask containing 65 parts by weight of toluene and 50 parts by weight of ethyl acetate at 80 ° C. over 5 hours with stirring, and further stirred for 5 hours to react. After completion of the reaction, the reaction mixture is cooled, and 25 parts by weight of xylene, 2.5 parts by weight of acrylic acid and 1.5 parts by weight of tetradecylbenzylammonium chloride are added thereto, and the mixture is reacted at 80 ° C. for 10 hours while blowing air into the photopolymerizable carbon. A acrylate copolymer solution having a carbon double bond introduced was obtained. To this solution, 7 parts by weight of benzoin as a photoinitiator and 2 parts by weight of an isocyanate cross-linking agent (Olestar P60-SX manufactured by Mitsui Toatsu Chemicals, Inc.) as a photoinitiator with respect to 100 parts by weight of a copolymer (solid content). Then, 15 parts by weight of dipentaerythritol hexaacrylate as a low molecular weight compound having two or more photopolymerizable carbon-carbon double bonds in the molecule was added to obtain an ultraviolet-curable adhesive solution. This adhesive solution was applied to the surface of a polypropylene film by a roll coater, dried at 110 ° C. for 2 minutes to provide an adhesive layer having a thickness of 15 μm, and then the obtained adhesive layer surface was subjected to corona discharge treatment. The treated surface of the ethylene-vinyl acetate copolymer resin film having a thickness of 200 μm was stuck and pressed to transfer the pressure-sensitive adhesive layer, thereby producing a film for semiconductor wafer grinding having an ultraviolet-curable pressure-sensitive adhesive layer. With respect to this semiconductor wafer grinding film, the adhesive force and the contamination property of the wafer surface were evaluated by the above-mentioned methods. The obtained results are shown in [Table 1].

Example 2 42 parts by weight of ethyl acrylate, 25 parts by weight of 2-ethylhexyl acrylate, 18 parts by weight of methyl acrylate, 15 parts by weight of glycidyl methacrylate, 7.5 parts by weight of acrylic acid. Parts, and except that the addition amount of dipentaerythritol hexaacrylate was 0.5 part by weight, a semiconductor wafer grinding film having a UV-curable pressure-sensitive adhesive layer was produced in the same manner as in Example 1. The obtained semiconductor wafer grinding film was evaluated in the same manner as in Example 1. The obtained results are shown in [Table 1].

Example 3 Example 3 was carried out except that 5 parts by weight of pentaerythritol tetraacrylate was used as the low molecular weight compound having two or more photopolymerizable carbon-carbon double bonds in the molecule and 10 parts by weight of the photoinitiator were used. In the same manner as in Example 1, a film for grinding a semiconductor wafer having a UV-curable pressure-sensitive adhesive layer was produced. The obtained semiconductor wafer grinding film was evaluated in the same manner as in Example 1. The obtained results are shown in [Table 1].

Example 4 A flask equipped with a thermometer, a reflux condenser, a dropping funnel, a nitrogen inlet and a stirrer was charged with 150 parts by weight of deionized water and 1.5 parts by weight of an anionic surfactant and placed in a nitrogen atmosphere. After stirring, the temperature was raised to 70 ° C. under stirring, 0.5 parts by weight of ammonium persulfate (polymerization initiator) was added and dissolved, and then 25.5 parts by weight of methyl acrylate, acrylic acid-
20 parts by weight of 2-ethylhexyl, ethyl acrylate 4
A monomer mixture consisting of 6.5 parts by weight of methacrylic acid and 8 parts by weight of methacrylic acid was continuously added dropwise over 4 hours, and after completion of addition, polymerization was continued by stirring for 3 hours to obtain an acrylic resin emulsion solution having a solid content of about 40% by weight. . This solution was diluted with deionized water to a solid content of 13% by weight, and then added with 8% aqueous ammonia to adjust the p
After neutralizing with H7, glycidyl methacrylate was added to a solid content of 1
To 100 parts by weight, 10 parts by weight and 0.5 part by weight of dimethylethanolamine were added, and while blowing air, 60
The reaction was carried out at 0 ° C for 10 hours to obtain an acrylic acid ester copolymer solution into which a photopolymerizable carbon-carbon double bond was introduced. To this solution, 7 parts by weight of benzophenone as a photopolymerization initiator per 100 parts by weight of the adhesive solid content, 2 parts by weight of trimethylolpropane-tri-β-aziridinylpropionate as an aziridine crosslinking agent, and a molecule were prepared. Pentaerythritol triacrylate 1 as a low molecular weight compound having two or more photopolymerizable carbon-carbon double bonds within
5 parts by weight were mixed to obtain an ultraviolet-curable adhesive solution. Hereinafter, a film for grinding a semiconductor wafer having an ultraviolet curable pressure-sensitive adhesive layer was produced in the same manner as in Example 1. The obtained semiconductor wafer grinding film was evaluated in the same manner as in Example 1. The obtained results are shown in [Table 1].

Comparative Example 1 A semiconductor wafer grinding film having a UV-curable pressure-sensitive adhesive layer was produced in the same manner as in Example 1 except that the amount of the photoinitiator added was 1 part by weight. The obtained semiconductor wafer grinding film was evaluated in the same manner as in Example 1. The obtained results are shown in [Table 1].

Comparative Example 2 A semiconductor wafer grinding film having a UV-curable pressure-sensitive adhesive layer was produced in the same manner as in Example 2 except that the amount of the photoinitiator added was 2 parts by weight. The obtained semiconductor wafer grinding film was evaluated in the same manner as in Example 1. The obtained results are shown in [Table 1].

Comparative Example 3 A semiconductor wafer grinding film having an ultraviolet-curable pressure-sensitive adhesive layer was produced in the same manner as in Example 1 except that the amount of the photoinitiator added was 20 parts by weight. The obtained semiconductor wafer grinding film was evaluated in the same manner as in Example 1. The obtained results are shown in [Table 1].

Comparative Example 4 The amount of pentaerythritol hexaacrylate added was 3
0 parts by weight, except that the amount of photoinitiator added was 5 parts by weight,
A film for grinding a semiconductor wafer having an ultraviolet-curable pressure-sensitive adhesive layer was produced in the same manner as in Example 1. The obtained semiconductor wafer grinding film was evaluated in the same manner as in Example 1. The obtained results are shown in [Table 1].

Comparative Example 5 A semiconductor wafer grinding film having a UV-curable pressure-sensitive adhesive layer was produced in the same manner as in Example 4 except that the amount of the photoinitiator added was 1 part by weight. The obtained semiconductor wafer grinding film was evaluated in the same manner as in Example 1. The obtained results are shown in [Table 1].

[0049]

[Table 1]

[0050]

The film for grinding the back surface of a semiconductor wafer manufactured by the method of the present invention does not contaminate the surface of the semiconductor wafer with foreign matters attached by the adhesive or residual adhesive. Further, since it has the same initial adhesive strength as the adhesive film having the conventional UV-curable adhesive layer and the adhesive strength lowering property due to the ultraviolet irradiation, if it is applied to a thinned semiconductor wafer, the semiconductor film due to grinding stress It is possible to prevent damage to the wafer and damage to the semiconductor wafer due to peeling stress.

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification number Internal reference number FI Technical display location C09J 7/02 JLF // C08J 5/14 9267-4F (72) Inventor Yoko Takeuchi Nagoya City, Aichi Prefecture 2-1, Tango Dori, Minami-ku Mitsui Toatsu Chemical Co., Ltd.

Claims (2)

[Claims] 1. A method for producing a film for grinding a back surface of a semiconductor wafer, which comprises applying a UV-curable adhesive to one surface of a light-transmitting base film and drying the same, wherein the UV-curable adhesive has a light 100 parts by weight of an acrylic acid ester-based copolymer having a polymerizable carbon-carbon double bond introduced therein, and 0.1 to 20 parts by weight of a low molecular weight compound having two or more photopolymerizable carbon-carbon double bonds in the molecule. And a photoinitiator in an amount of 5 to 15 parts by weight. 2. The semiconductor according to claim 1, wherein the total amount of the low molecular weight compound having two or more photopolymerizable carbon-carbon double bonds in the molecule and the photopolymerization initiator is 25 parts by weight or less. Wafer backside grinding film manufacturing method.