JP2018125505A - 半導体デバイス - Google Patents

半導体デバイス Download PDF

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Publication number
JP2018125505A
JP2018125505A JP2017019126A JP2017019126A JP2018125505A JP 2018125505 A JP2018125505 A JP 2018125505A JP 2017019126 A JP2017019126 A JP 2017019126A JP 2017019126 A JP2017019126 A JP 2017019126A JP 2018125505 A JP2018125505 A JP 2018125505A
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Japan
Prior art keywords
layer
electrode layer
semiconductor device
elastic
thickness
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JP2017019126A
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English (en)
Japanese (ja)
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JP2018125505A5 (enExample
Inventor
憲二郎 福田
Kenjiro Fukuda
憲二郎 福田
隆夫 染谷
Takao Someya
隆夫 染谷
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RIKEN
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RIKEN
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Priority to JP2017019126A priority Critical patent/JP2018125505A/ja
Priority to PCT/JP2018/003475 priority patent/WO2018143368A1/ja
Publication of JP2018125505A publication Critical patent/JP2018125505A/ja
Priority to US16/529,719 priority patent/US20190363206A1/en
Publication of JP2018125505A5 publication Critical patent/JP2018125505A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H10F19/804—Materials of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
JP2017019126A 2017-02-03 2017-02-03 半導体デバイス Pending JP2018125505A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2017019126A JP2018125505A (ja) 2017-02-03 2017-02-03 半導体デバイス
PCT/JP2018/003475 WO2018143368A1 (ja) 2017-02-03 2018-02-01 半導体デバイス
US16/529,719 US20190363206A1 (en) 2017-02-03 2019-08-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017019126A JP2018125505A (ja) 2017-02-03 2017-02-03 半導体デバイス

Publications (2)

Publication Number Publication Date
JP2018125505A true JP2018125505A (ja) 2018-08-09
JP2018125505A5 JP2018125505A5 (enExample) 2020-07-09

Family

ID=63040750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017019126A Pending JP2018125505A (ja) 2017-02-03 2017-02-03 半導体デバイス

Country Status (3)

Country Link
US (1) US20190363206A1 (enExample)
JP (1) JP2018125505A (enExample)
WO (1) WO2018143368A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3739641B1 (en) * 2019-05-15 2025-08-13 Samsung Electronics Co., Ltd. N-type semiconductor composition, and thin film, organic photoelectric device, image sensor, and electronic device including the same
EP3739643A1 (en) 2019-05-17 2020-11-18 Samsung Electronics Co., Ltd. Organic photoelectric device, image sensor, and electronic device
KR20220093644A (ko) * 2020-12-28 2022-07-05 동우 화인켐 주식회사 원도우 적층체 및 그 제조 방법
CN120302723A (zh) * 2024-01-05 2025-07-11 宁德时代未来能源(上海)研究院有限公司 太阳能电池及制备方法、用电设备

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02113584A (ja) * 1988-09-01 1990-04-25 Minnesota Mining & Mfg Co <3M> 曲げても性能の劣化しない薄膜集積回路の製造方法
JPH08236796A (ja) * 1994-11-04 1996-09-13 Canon Inc 集電電極並びに該集電電極を用いた光起電力素子及びその製造方法
JP2005251671A (ja) * 2004-03-08 2005-09-15 Fuji Photo Film Co Ltd 表示装置
JP2005311171A (ja) * 2004-04-23 2005-11-04 Kansai Tlo Kk 有機半導体デバイス
JP2006066762A (ja) * 2004-08-30 2006-03-09 Canon Inc フレキシブル太陽電池モジュール及びその施工方法
WO2010071123A1 (ja) * 2008-12-17 2010-06-24 三洋電機株式会社 太陽電池モジュール及びその製造方法
JP2011069812A (ja) * 2009-08-31 2011-04-07 Mitsui Chemicals Inc 測定方法、太陽電池モジュールの製造方法、測定装置、太陽電池モジュールおよび太陽電池モジュールの評価方法
US20140367644A1 (en) * 2013-06-13 2014-12-18 Samsung Display Co., Ltd. Display apparatus having improved bending properties and method of manufacturing same
JP2016111192A (ja) * 2014-12-05 2016-06-20 トヨタ自動車株式会社 太陽電池モジュール
JP2016197695A (ja) * 2015-04-06 2016-11-24 旭硝子株式会社 太陽電池モジュール
WO2017010329A1 (ja) * 2015-07-10 2017-01-19 シャープ株式会社 エレクトロルミネッセンス装置

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02113584A (ja) * 1988-09-01 1990-04-25 Minnesota Mining & Mfg Co <3M> 曲げても性能の劣化しない薄膜集積回路の製造方法
JPH08236796A (ja) * 1994-11-04 1996-09-13 Canon Inc 集電電極並びに該集電電極を用いた光起電力素子及びその製造方法
JP2005251671A (ja) * 2004-03-08 2005-09-15 Fuji Photo Film Co Ltd 表示装置
JP2005311171A (ja) * 2004-04-23 2005-11-04 Kansai Tlo Kk 有機半導体デバイス
JP2006066762A (ja) * 2004-08-30 2006-03-09 Canon Inc フレキシブル太陽電池モジュール及びその施工方法
WO2010071123A1 (ja) * 2008-12-17 2010-06-24 三洋電機株式会社 太陽電池モジュール及びその製造方法
JP2011069812A (ja) * 2009-08-31 2011-04-07 Mitsui Chemicals Inc 測定方法、太陽電池モジュールの製造方法、測定装置、太陽電池モジュールおよび太陽電池モジュールの評価方法
US20140367644A1 (en) * 2013-06-13 2014-12-18 Samsung Display Co., Ltd. Display apparatus having improved bending properties and method of manufacturing same
JP2016111192A (ja) * 2014-12-05 2016-06-20 トヨタ自動車株式会社 太陽電池モジュール
JP2016197695A (ja) * 2015-04-06 2016-11-24 旭硝子株式会社 太陽電池モジュール
WO2017010329A1 (ja) * 2015-07-10 2017-01-19 シャープ株式会社 エレクトロルミネッセンス装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
REUVENY AMIR ET AL.: "Ultra-flexible short-channel organic field-effect transistors", APPLIED PHYSICS EXPRESS, vol. 8, JPN6020044797, 28 August 2015 (2015-08-28), pages 091601 - 1, ISSN: 0004606676 *

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US20190363206A1 (en) 2019-11-28
WO2018143368A1 (ja) 2018-08-09

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