JP2018109590A - Apparatus and method for inspecting semiconductor devices - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device inspection apparatus capable of accurately measuring dynamic characteristics of semiconductor devices by minimizing inductance.SOLUTION: An inspection apparatus 1 used for inspecting a semiconductor device 100 having a plurality of circuit units 102, each comprising semiconductor elements 104, 105 and leads 109, 112 connected to the semiconductor elements, is provided, the inspection apparatus comprising a measurement instrument 2 provided with measurement probes 11, 12 to be electrically connected to leads of one of the circuit units and configured to measure electrical characteristics of the circuit unit while being electrically connected to the circuit unit, and movement means 3 configured to change the circuit unit to be connected to the measurement instrument by moving the measurement instrument and/or the semiconductor device relative to each other.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a semiconductor device inspection apparatus and a semiconductor device inspection method.

  In Patent Document 1, electrical characteristics (particularly static characteristics) of a plurality of semiconductor elements are inspected in a state in which a plurality of contact pins (measuring elements) are brought into contact with a plurality of semiconductor elements formed on a wafer. A semiconductor inspection apparatus is disclosed. In this semiconductor inspection apparatus, when each semiconductor device is inspected with one measuring instrument, it is necessary to provide a relay for switching semiconductor elements connected to the measuring instrument.

JP 2013-200266 A

   By the way, not only the semiconductor elements as described above, but also a plurality of semiconductor elements and a plurality of leads connected to the plurality of semiconductor elements are grouped together in a package such as a resin. Some semiconductor devices are also available. In a semiconductor device, not only static characteristics of each circuit unit but also dynamic characteristics may be measured.

   However, when inspecting the dynamic characteristics of the semiconductor device described above, the circuit unit connected to the measuring instrument is switched by a relay after contacting the probe to all the leads of the semiconductor device, as in the conventional semiconductor inspection device. When the method is employed, there is a problem that the inductance of the wiring from the measuring element to the measuring instrument increases due to the relay being interposed on the measurement path, and the dynamic characteristics of the circuit unit cannot be measured accurately.

Further, when the number of relays increases in accordance with the number of circuit units, or when the size of the relays increases with the magnitude of the current that flows at the time of inspection, the wiring for detouring these becomes longer. As a result, there is a problem that the wiring in the inspection apparatus becomes long and the wiring inductance increases.
Furthermore, there is a problem that the inspection device including the relay is expensive.

  The present invention has been made in view of the above-described circumstances, and an object of the present invention is to provide a semiconductor device inspection apparatus and inspection method capable of accurately measuring dynamic characteristics of a semiconductor device while suppressing inductance.

  An inspection apparatus for a semiconductor device according to an aspect of the present invention is an inspection apparatus used for inspecting a semiconductor device including a plurality of circuit units each including a semiconductor element and a lead connected to the semiconductor element. A measuring instrument that has a probe electrically connected to the lead and that measures the electrical characteristics of the circuit unit while being electrically connected to the circuit unit, and relatively moves the measuring instrument and the semiconductor device And a moving means for switching the circuit unit connected to the measuring instrument.

  A semiconductor device inspection method according to an aspect of the present invention is a semiconductor device inspection method for inspecting a semiconductor device including a plurality of circuit units including a semiconductor element and a lead connected to the semiconductor element, and measuring a measuring instrument A measuring step of electrically connecting a child to the lead of one circuit unit and measuring the electrical characteristics of the circuit unit by the measuring instrument, and moving the measuring instrument and the semiconductor device relatively, A moving step of switching the circuit unit connected to the measuring instrument, and an inspection method repeatedly performed.

  According to the present invention, there is no need to provide a relay in the measuring instrument. For this reason, the inductance resulting from the relay itself can be eliminated, and the length of the wiring due to the relay can also be suppressed. Thereby, the inductance on the measuring instrument side can be suppressed and the dynamic characteristics of the semiconductor device can be measured accurately. Moreover, the manufacturing cost of the inspection apparatus can be kept low.

It is the side view which looked at the inspection apparatus which concerns on 1st embodiment of this invention, and the semiconductor device which is a test object from the A direction of FIG. It is a top view which shows the inspection method which test | inspects a semiconductor device with the inspection apparatus which concerns on 1st embodiment of this invention. It is a top view which shows the inspection method which test | inspects a semiconductor device with the inspection apparatus which concerns on 1st embodiment of this invention. It is a circuit diagram of the circuit module in the semiconductor device of FIGS. It is the side view which looked at the inspection apparatus which concerns on 2nd embodiment of this invention, and the semiconductor device which is inspection object from the B direction of FIG. It is a top view which shows the test | inspection method which test | inspects a semiconductor device with the inspection apparatus which concerns on 2nd embodiment of this invention. It is a top view which shows the test | inspection method which test | inspects a semiconductor device with the inspection apparatus which concerns on 2nd embodiment of this invention. It is the side view which looked at the inspection apparatus which concerns on 3rd embodiment of this invention, and the semiconductor device which is inspection object from the C direction of FIG. It is a top view which shows the test | inspection method which test | inspects a semiconductor device with the inspection apparatus which concerns on 3rd embodiment of this invention.

[First embodiment]
The first embodiment of the present invention will be described below with reference to FIGS.
As shown in FIGS. 1 and 2, the inspection apparatus 1 according to the present embodiment includes a plurality of circuit units 102 and 103 including semiconductor elements 104 and 105 and leads 106 to 111 connected to the semiconductor elements 104 and 105. Used for 100 inspections.

First, the configuration of the semiconductor device 100 to be inspected will be described.
The semiconductor device 100 of this embodiment includes six circuit units 102 and 103. The circuit units 102 and 103 of the semiconductor device 100 have one semiconductor element 104 and 105 as shown in FIGS. The semiconductor elements 104 and 105 are switching elements having a source electrode, a drain electrode, and a gate electrode.

  Further, the circuit units 102 and 103 according to the present embodiment have a plurality of leads 106 to 111 connected to the semiconductor elements 104 and 105. The plurality of leads 106-111 include source leads 106, 109 connected to the source electrodes of the semiconductor elements 104, 105, drain leads 107, 110 connected to the drain electrodes of the semiconductor elements 104, 105, and a semiconductor. Gate leads 108 and 111 connected to the gate electrodes of the elements 104 and 105 are included.

  In the semiconductor device 100 of this embodiment, one circuit module 101 is configured by two circuit units 102 and 103 (a high-voltage side circuit unit 102 (first circuit unit) and a low-voltage side circuit unit 103 (second circuit unit)). ing. Specifically, one circuit module 101 includes a source electrode of the semiconductor element 104 (high voltage side semiconductor element 104) of the high voltage side circuit unit 102 and a drain of the semiconductor element 105 (low voltage side semiconductor element 105) of the low voltage side circuit unit 103. It is comprised by connecting with an electrode. Therefore, in this embodiment, the source lead 106 connected to the source electrode of the high-voltage side semiconductor element 104 and the drain lead 110 connected to the drain electrode of the low-voltage side semiconductor element 105 are the same lead 112 ( It is composed of a common lead 112). That is, the source electrode of the high-voltage side semiconductor element 104 and the drain electrode of the low-voltage side semiconductor element 105 are connected to the common lead 112.

  The semiconductor device 100 of this embodiment includes three circuit modules 101 having the above-described configuration, and can be used for operation control of a motor (for example, a three-phase motor).

  In addition, the semiconductor device 100 according to the present embodiment includes a package unit 115 in which a plurality of semiconductor elements 104 and 105 constituting three circuit modules 101 (six circuit units 102 and 103) are built. The package part 115 may be, for example, a resin in which the semiconductor elements 104 and 105 are embedded, or may be a case having a cavity inside, for example. A plurality of leads 107-109, 111, and 112 constituting the three circuit modules 101 are exposed to the outside from the package unit 115. In the present embodiment, the plurality of leads 107-109, 111, and 112 protrude from the package portion 115. The electrodes of the semiconductor elements 104 and 105 and the leads 107 to 109, 111 and 112 are electrically connected inside the package unit 115. The three circuit modules 101 are arranged in the longitudinal direction (X-axis direction) of the package unit 115.

  In the semiconductor device 100 of the present embodiment, the relative arrangement of the three leads 107, 108, 112 (109, 111, 112) constituting the same circuit unit 102 (103) constitutes the same circuit module 101. It differs between the two circuit units 102 and 103. That is, the semiconductor device 100 of the present embodiment includes two types of circuit units 102 and 103 in which the relative arrangement of the three leads 107, 108, and 112 (109, 111, and 112) is different from each other. Hereinafter, a specific arrangement of the five leads 107-109, 111, 112 in the same circuit module 101 will be described.

  In the same circuit module 101, the drain lead 107 of the high voltage side circuit unit 102 and the source lead 109 of the low voltage side circuit unit 103, the gate leads 108 and 111 of the high voltage side circuit unit 102 and the low voltage side circuit unit 103, and The common lead 112 protrudes in the opposite direction from the package part 115 in the width direction (Y-axis direction) orthogonal to the longitudinal direction of the package part 115.

  Further, the source lead 106 of the low-voltage circuit unit 103 and the drain lead 107 of the high-voltage circuit unit 102 projecting in the same direction from the package unit 115 are in the longitudinal direction (X-axis positive direction) of the package unit 115. They are arranged in this order. Similarly, the common lead 112 protruding from the package part 115 in the same direction, the gate lead 108 of the high-voltage side circuit unit 102, and the gate lead 108 of the low-voltage side circuit unit 103 are arranged in the longitudinal direction of the package part 115 ( (In the positive direction of the X axis) are arranged in this order.

Further, the source leads 109 and the common leads 112 of the low-voltage circuit unit 103 projecting in the opposite directions from the package unit 115 are arranged in the width direction of the package unit 115. Similarly, the drain lead 107 of the high-voltage circuit unit 102 and the gate leads 108 and 111 of the high-voltage circuit unit 102 and the low-voltage circuit unit 103 projecting in the opposite directions from the package unit 115 are the package unit 115. Are arranged in the width direction.
The relative arrangement of the plurality of leads 107-109, 111, 112 in the same circuit module 101 and the direction of the arrangement pattern of the plurality of leads 107-109, 111, 112 are between the three circuit modules 101. Are equal to each other.

  As shown in FIGS. 1 to 3, the inspection apparatus 1 according to the present embodiment measures the electrical characteristics of the circuit units 102 and 103 while being electrically connected to one circuit unit 102 and 103 of the semiconductor device 100. The measuring device 2 and a moving unit 3 that switches the circuit units 102 and 103 connected to the measuring device 2 by relatively moving the measuring device 2 and the semiconductor device 100 are provided.

The measuring instrument 2 has measuring elements 11, 12, and 13 that are electrically connected to the leads 107, 108, and 112 (109, 111, and 112) of one circuit unit 102 (103). The number of measuring elements 11, 12, and 13 corresponds to the number of leads 107, 108, and 112 (109, 111, and 112) constituting one circuit unit 102 (103). The measuring instrument 2 of this embodiment includes three measuring elements 11, 12, and 13 that are individually electrically connected to three leads 107, 108, and 112 (109, 111, and 112) of one circuit unit 102 (103). Have. The three measuring elements 11, 12, and 13 are respectively a source measuring element 11 connected to the source lead 106 (109), a drain measuring element 12 connected to the drain lead 107 (110), and a gate lead 108. This is a gate measuring element 13 connected to (111). Although only one measuring element 11, 12, 13 is shown in the illustrated example, it may have two points, for example, an application point (force) and a measurement point (sense).
The measuring elements 11, 12, and 13 are fixed to the measuring instrument main body 14 that constitutes the measuring instrument 2 together with the measuring elements 11, 12, and 13. Thereby, the relative arrangement | sequence of the three measuring elements 11, 12, 13 is maintained. The probe 11, 12, 13 in the illustrated example is formed in a needle shape extending from the measuring instrument main body 14, but is not limited thereto.

  The measuring instrument 2 includes a measuring circuit unit 15 for measuring the electrical characteristics of the circuit units 102 and 103. The measurement circuit unit 15 may measure the static characteristics of the circuit units 102 and 103, for example, but mainly measures the dynamic characteristics of the circuit units 102 and 103 in this embodiment. The measurement circuit unit 15 is electrically connected to the measuring elements 11, 12, and 13 by wiring 16. In the present embodiment, the measurement circuit unit 15 and the wiring 16 are provided inside the measuring instrument main body 14.

  As described above, the semiconductor device 100 according to the present embodiment includes the two types of circuit units 102 and 103 in which the relative arrangement of the three leads 107, 108, and 112 (109, 111, and 112) is different from each other. For this reason, as shown in FIGS. 2 and 3, the inspection apparatus 1 of the present embodiment has an arrangement pattern of three leads 107, 108, 112 (109, 111, 112) of each type of circuit unit 102 (103). Two types of measuring instruments 2 (2A, 2B) are provided. That is, the arrangement of the three measuring elements 11, 12, 13 of the measuring instrument 2 is different between the two kinds of measuring instruments 2A, 2B.

  In the present embodiment, the arrangement of the three measuring elements 11, 12, 13 of the first measuring instrument 2 </ b> A corresponds to the arrangement pattern of the three leads 106 (112), 107, 108 of the high voltage side circuit unit 102. Similarly, the arrangement of the three measuring elements 11, 12, 13 of the second measuring instrument 2 </ b> B corresponds to the arrangement pattern of the three leads 109, 110 (112), 111 of the low voltage side circuit unit 103.

  In the semiconductor device 100 of the present embodiment, the high voltage side circuit unit 102 and the low voltage side circuit unit 103 are electrically connected (see FIG. 4). For this reason, in the inspection apparatus 1 of this embodiment, when measuring the electrical characteristics of one circuit unit 102 (103), the other circuit unit 103 (102) to which the measuring elements 11, 12, and 13 are not connected. The other two leads 109, 111 (107, 108) are connected to the other two leads 109, 111 (107, 108) to electrically short-circuit the two leads 109, 111 (107, 108).

  For example, when the electrical characteristics of the high-voltage circuit unit 102 are measured by the first measuring instrument 2A, the source lead 109 and the gate lead 111 of the low-voltage circuit unit 103 are short-circuited by the short-circuit terminal. Further, when the electrical characteristics of the low-voltage circuit unit 103 are measured by the second measuring instrument 2B, the drain leads 107 and 110 and the gate leads 108 and 111 of the high-voltage circuit unit 102 are short-circuited by the short-circuit terminal. . For example, the short-circuit terminal may be provided in the measuring instrument 2 or may be provided separately from the measuring instrument 2.

  In the inspection apparatus 1 of this embodiment, the above-described measuring elements 11, 12, 13 and the short-circuit terminals are brought into direct contact with the leads 107-109, 111, 112 of the circuit units 102, 103, whereby the measuring elements 11, 12, 13 And the short-circuit terminal is electrically connected to the leads 107-109, 111, and 112.

The moving means 3 of the present embodiment moves the semiconductor device 100 relative to the measuring instrument 2. Specifically, the moving means 3 of the present embodiment is configured such that the leads 107, 108, 112 (109, 111, 112) of one circuit unit 102 (103) are in contact with the measuring elements 11, 12, 13 (contact position). CP) and the position where the leads 107, 108, 112 (109, 111, 112) are separated from the measuring elements 11, 12, 13 (separated position DP), the semiconductor device 100 is moved in the first direction (Z-axis direction). ). Further, the moving unit 3 moves the semiconductor device 100 in an orthogonal direction (X-axis direction and / or Y-axis direction) orthogonal to the first direction in a state where the semiconductor device 100 is disposed at the separation position DP. Further, for example, the moving unit 3 may rotate the semiconductor device 100 around the axis with the first direction as an axis.
On the other hand, the position of the measuring instrument 2 is fixed to the base (not shown) of the inspection apparatus 1 or the like.

The moving means 3 may be arbitrarily configured. The moving means 3 of this embodiment includes a support base 17 that supports the semiconductor device 100 from below (Z-axis negative direction). The support base 17 is movable in a first direction and an orthogonal direction with respect to the measuring instrument 2 (and the base of the inspection apparatus 1) by a drive source (not shown). Further, the support base 17 may be rotatable with respect to the measuring instrument 2 (and the base of the inspection apparatus 1) around the first direction as an axis.
For example, one support base 17 may be provided for each of the measuring instruments 2A and 2B, or only one supporting base 17 may be provided for two measuring instruments 2A and 2B, for example.

Next, an inspection method for the semiconductor device 100 according to the present embodiment will be described.
In the inspection method of the present embodiment, the measurement process and the movement process are repeatedly performed. In the measurement process, the three measuring elements 11, 12, 13 of the measuring instrument 2 are electrically connected to the three leads 107, 108, 112 (109, 111, 112) of the one circuit unit 102 (103), thereby measuring the measuring instrument. 2 is used to measure the electrical characteristics of one circuit unit 102 (103). In the moving process, the measuring instrument 2 and the semiconductor device 100 are relatively moved, and the circuit units 102 and 103 connected to the measuring instrument 2 are switched.

Hereinafter, a procedure for inspecting the semiconductor device 100 using the inspection apparatus 1 of the present embodiment will be specifically described.
In this embodiment, first, as shown in FIG. 2, the electrical characteristics (particularly the dynamic characteristics) of the high-voltage circuit units 102 of the three circuit modules 101 are sequentially (from the left in FIG. 2) by the first measuring instrument 2A. Measure in order).

In this measurement, first, a measurement process is performed on the high-voltage side circuit unit 102 of the first circuit module 101A by the first measuring instrument 2A. In this measurement process, the three measuring elements 11, 12, 13 of the first measuring instrument 2A are brought into contact with and electrically connected to the three leads 107, 108, 112 of the high voltage side circuit unit 102 of the first circuit module 101A. Further, the source lead 109 and the gate lead 111 of the low-voltage circuit unit 103 of the first circuit module 101A are short-circuited by a short-circuit terminal (not shown). In this state, the electrical characteristics of the high-voltage circuit unit 102 of the first circuit module 101A are measured by the first measuring instrument 2A.
When the measuring elements 11, 12, 13 of the first measuring instrument 2A are brought into contact with the three leads 107, 108, 112 of the high-voltage side circuit unit 102 of the first circuit module 101A, as shown in FIG. 3, the semiconductor device 100 may be moved from the separation position DP to the contact position CP.

Next, the semiconductor device 100 is moved relative to the first measuring instrument 2A by the moving means 3, and the high voltage side circuit unit 102 connected to the first measuring instrument 2A is removed from the high voltage side circuit unit 102 of the first circuit module 101A. A moving step of switching to the high voltage side circuit unit 102 of the second circuit module 101B is performed.
In this moving process, first, as shown in FIG. 1, the semiconductor device 100 is moved from the contact position CP to the separated position DP by the moving means 3. Thereby, the connection between the first measuring instrument 2A and the high voltage side circuit unit 102 of the first circuit module 101A is released. Next, as shown in FIG. 2, the three measuring elements 11, 12, and 13 of the first measuring instrument 2A are connected to the three leads 107, 108, and 112 of the high-voltage side circuit unit 102 of the second circuit module 101B and the Z-axis direction. The semiconductor device 100 is moved in the longitudinal direction of the package portion 115 (X-axis negative direction) by the moving means 3 so as to overlap with the vertical direction. Finally, as shown in FIG. 1, the semiconductor device 100 is moved from the separation position DP to the contact position CP by the moving means 3. Thereby, the first measuring instrument 2A and the high-voltage side circuit unit 102 of the second circuit module 101B are electrically connected, and the moving process is completed.

  After the above moving process, as in the case of the first circuit module 101A, the first measuring instrument 2A performs the measuring process on the high voltage side circuit unit 102 of the second circuit module 101B. That is, the three measuring elements 11, 12, 13 of the first measuring instrument 2A are brought into contact with and electrically connected to the three leads 107, 108, 112 of the high-voltage circuit unit 102 of the second circuit module 101B. The electrical characteristics of the high-voltage circuit unit 102 of the second circuit module 101B are measured by 2A.

After this measurement process, the semiconductor device 100 is moved with respect to the first measuring instrument 2A, and the high voltage side circuit unit 102 connected to the first measuring instrument 2A is moved to the second circuit module 101B in the same manner as the above-described moving process. A moving step of switching from the high voltage side circuit unit 102 to the high voltage side circuit unit 102 of the third circuit module 101C is performed.
Finally, as in the case of the first and second circuit modules 101A and 101B, the measurement process is performed on the high-voltage side circuit unit 102 of the third circuit module 101C by the first measuring instrument 2A, thereby three circuits. The measurement of the electrical characteristics of the high voltage side circuit unit 102 of the module 101 is completed.

  After the measurement of the electrical characteristics of the three high-voltage circuit units 102 by the first measuring instrument 2A is completed, the semiconductor device 100 is moved from the first measuring instrument 2A to the second measuring instrument 2B shown in FIG. After carrying out the moving process, etc., the electrical characteristics (particularly the dynamic characteristics) of the low-voltage circuit units 103 of the three circuit modules 101 are measured in order (in order from the left in FIG. 3) by the second measuring instrument 2B. To do.

This measurement may be performed in the same manner as the measurement procedure of the electrical characteristics of the high-voltage circuit unit 102 of the three circuit modules 101 described above.
That is, first, the measurement process may be performed on the low-voltage circuit unit 103 of the first circuit module 101A by the second measuring instrument 2B. In this measurement process, the three measuring elements 11, 12, 13 of the second measuring instrument 2B are brought into contact with and electrically connected to the three leads 109, 111, 112 of the low-voltage side circuit unit 103 of the first circuit module 101A. What is necessary is just to measure the electrical characteristic of the low voltage | pressure side circuit unit 103 of 101 A of 1st circuit modules with the two measuring device 2B. Further, in this measurement process, the drain lead 107 and the gate lead 108 of the high-voltage circuit unit 102 of the first circuit module 101A may be short-circuited by a short-circuit terminal (not shown).

  Next, the semiconductor device 100 is moved relative to the second measuring instrument 2B by the moving means 3, and the low-voltage side circuit unit 103 connected to the second measuring instrument 2B is moved from the low-voltage side circuit unit 103 of the first circuit module 101A. What is necessary is just to implement the movement process switched to the low voltage | pressure side circuit unit 103 of the 2nd circuit module 101B.

Thereafter, as in the case of the first circuit module 101A, the measurement process for the low-voltage circuit unit 103 of the second circuit module 101B by the second measuring instrument 2B, the semiconductor device 100 is moved with respect to the second measuring instrument 2B. Moving the low voltage side circuit unit 103 connected to the second measuring instrument 2B from the low voltage side circuit unit 103 of the second circuit module 101B to the low voltage side circuit unit 103 of the third circuit module 101C, by the second measuring instrument 2B What is necessary is just to implement in order the measurement process with respect to the low voltage | pressure side circuit unit 103 of the 3rd circuit module 101C. Thereby, the measurement of the electrical characteristics of the low-voltage circuit unit 103 of the three circuit modules 101 is completed.
As described above, the inspection of the semiconductor device 100 by the inspection apparatus 1 of the present embodiment is completed.

  The order of the circuit units 102 and 103 for measuring electrical characteristics (particularly dynamic characteristics) by the inspection apparatus 1 of the present embodiment is not limited to the above, and may be arbitrary.

As described above, according to the inspection apparatus 1 and the inspection method of the present embodiment, the measuring instrument 2 is electrically connected to only one circuit unit 102 (103), and the circuit unit 102 (103) is connected. It is configured to measure electrical characteristics. Further, the circuit units 102 and 103 connected to the measuring instrument 2 are switched by relatively moving the measuring instrument 2 and the semiconductor device 100.
For this reason, it is not necessary to provide a conventional relay in the measuring instrument 2. Thereby, the inductance resulting from the relay itself can be eliminated, and the length of the wiring due to the relay can be suppressed.
Therefore, the inductance on the measuring instrument 2 side can be suppressed and the dynamic characteristics of the semiconductor device 100 can be accurately measured. Moreover, the manufacturing cost of the test | inspection apparatus 1 can be restrained low because a relay becomes unnecessary.

  In addition, the inspection apparatus 1 of the present embodiment has a plurality of types of measuring instruments 2A and 2B corresponding to the arrangement pattern of the plurality of leads 107, 108 and 112 (109, 111 and 112) of each type of circuit unit 102 (103). Is provided. As described above, when the measuring device 2 is prepared for each type of the circuit units 102 and 103 (the type of arrangement pattern of the leads 107, 108, and 112 (109, 111, and 112)), only one measuring device 2 is prepared. The relative movement between the measuring instrument 2 and the semiconductor device 100 by the moving means 3 can be simplified as compared with the case of preparing the device. In the present embodiment, the relative moving direction of the measuring instrument 2 and the semiconductor device 100 by the moving means 3 is the first for contacting / separating the leads 107-109, 111, 112 and the measuring elements 11, 12, 13. There are only one direction (Z-axis direction) and two orthogonal directions (X-axis direction) orthogonal to the first direction, which are simple. Thereby, the inspection of the semiconductor device 100 can be performed quickly and efficiently.

  Moreover, according to the inspection apparatus 1 of this embodiment, the moving means 3 moves the semiconductor device 100, and the position of the measuring instrument 2 is fixed. In this case, the wiring in the measuring instrument 2 can be set shorter than when the moving unit 3 moves the measuring instrument 2. That is, the inductance on the measuring instrument 2 side can be further reduced. Further, it is not necessary to bend the wiring in the measuring instrument 2. Therefore, the dynamic characteristics of the semiconductor device 100 can be measured more accurately.

[Second Embodiment]
Next, a second embodiment of the present invention will be described with reference to FIGS. Among the configurations of the present embodiment, the same configurations as those of the first embodiment are denoted by the same reference numerals and the description thereof is omitted.

As shown in FIGS. 5 and 6, the inspection apparatus 1D of the present embodiment is used for the inspection of the semiconductor device 100 similar to that of the first embodiment. However, in the semiconductor device 100 according to the present embodiment, the arrangement of the gate leads 108 and 111 of the high-voltage side circuit unit 102 and the low-voltage side circuit unit 103 is opposite to that of the first embodiment.
The inspection apparatus 1D of the present embodiment includes the same measuring instrument 2D and moving means 3D as in the first embodiment. In addition, the inspection apparatus 1D of the present embodiment also has a short circuit terminal (not shown) similar to that of the first embodiment.

  Similar to the first embodiment, the measuring instrument 2D includes three measuring elements 11, which are individually electrically connected to three leads 107, 108, 112 (109, 111, 112) of one circuit unit 102 (103). 12 and 13. However, in the measuring instrument 2D of the present embodiment, the relative positions of the three measuring elements 11, 12, 13 are different from the measuring instrument 2D of the first embodiment. Moreover, the number of measuring instruments 2D in this embodiment is one.

  The inspection apparatus 1D of the present embodiment is an intermediate contactor that is arranged between the measuring instrument 2D and the semiconductor device 100 and electrically connects the measuring elements 11, 12, 13 and the leads 107-109, 111, 112. 4 is further provided. The intermediate contactor 4 includes a plurality of contact pins 22-27, a plurality of relay terminals 32-37, and a plurality of wiring portions that electrically connect the plurality of contact pins 22-27 and the plurality of relay terminals 32-37 individually. 41.

The plurality of contact pins 22-27 are pins that individually contact the plurality of leads 106-1111 of the semiconductor device 100. The number of contact pins 22-27 may be smaller than the number of leads 106-111, for example, but is the same as the number of leads 106-111 in this embodiment. That is, the plurality of contact pins 22-27 individually contact all the leads 106-111 of the semiconductor device 100.
The plurality of relay terminals 32-37 are terminals for individually contacting the three measuring elements 11, 12, 13 of the measuring instrument 2D. The number of relay terminals 32-37 may be the same as the number of contact pins 22-27, but is different in this embodiment as will be described later.

In the present embodiment, the plurality of contact pins 22-27 are for the high-voltage side circuit unit 102 that respectively contacts the source lead 106, the drain lead 107, and the gate lead 108 of the high-voltage side circuit unit 102 of the semiconductor device 100. There are a source contact pin 22, a drain contact pin 23, and a gate contact pin 24 (three high-voltage side contact pins 22-24 (first contact pins)). The plurality of contact pins 22-27 include a source contact pin 25 for the low-voltage side circuit unit 103 that contacts the source lead 109, the drain lead 110, and the gate lead 111 of the low-voltage circuit unit 103, and a drain. Contact pin 26 and gate contact pin 27 (three low-pressure side contact pins 25-27 (second contact pins)).
However, in the semiconductor device 100 of this embodiment, the source lead 106 of the high-voltage side circuit unit 102 and the drain lead 110 of the low-voltage side circuit unit 103 are configured by the common lead 112. Therefore, the source contact pin 22 for the high-voltage side circuit unit 102 and the drain contact pin 26 for the low-voltage side circuit unit 103 are constituted by the same contact pin 28 (common contact pin 28).

  Further, the semiconductor device 100 of the present embodiment has three circuit modules 101 having five leads 107-109, 111, and 112. For this reason, the intermediate contactor 4 has three sets of contact pin units 21 with the five contact pins 23-25, 27, 28 corresponding to one circuit module 101 as a set of contact pin units 21. The relative arrangement of the five contact pins 23-25, 27, 28 in the same contact pin unit 21 and the orientation of the arrangement pattern of the five contact pins 23-25, 27, 28 are determined by three contact pin units. 21 is equal to each other.

In the present embodiment, the plurality of relay terminals 32-37 include source relay terminals 32 and 35 that contact the source measuring element 11 of the measuring instrument 2D, and drain relay terminals 33 that contact the drain measuring element 12. 36 and gate relay terminals 34 and 37 for contacting the gate measuring element 13.
More specifically, the plurality of relay terminals 32-37 include source relay terminals 32 individually connected to the source contact pin 22, the drain contact pin 23, and the gate contact pin 24 for the high-voltage circuit unit 102. , The drain relay terminal 33, the gate relay terminal 34, and the source contact pin 25 for the low-voltage circuit unit 103, the drain contact pin 26, and the source contact terminal 35 individually connected to the gate contact pin 27. There are a drain relay terminal 36 and a gate relay terminal 37.

  However, in the present embodiment, the source contact pin 22 for the high-voltage side circuit unit 102 and the drain contact pin 26 for the low-voltage side circuit unit 103 are configured by the common contact pin 28. For this reason, the source relay terminal 32 for the high voltage side circuit unit 102 and the drain relay terminal 36 for the low voltage side circuit unit 103 are connected to the same common contact pin 28. The source relay terminal 32 for the high-voltage side circuit unit 102 and the drain relay terminal 36 for the low-voltage side circuit unit 103 may be configured by the same relay terminal as in the common contact pin 28, for example. In the embodiment, it is formed separately.

In the intermediate contactor 4 of the present embodiment, the relative positions of the three relay terminals 32-34 for the high-voltage side circuit unit 102 (the high-voltage side relay terminal 32-34 (first relay terminal)) and the low-voltage side circuit unit 103 are used. The relative positions of the three relay terminals 35-37 (low voltage side relay terminals 35-37 (second relay terminals)) are equal to each other. The relative positions of the three relay terminals 32-34 (35-37) for each circuit unit 102 (103) are not limited to the illustrated example, and may be arbitrary.
The arrangement of the three relay terminals 32-34 (35-37) for each circuit unit 102 (103) is equal to the arrangement of the three measuring elements 11, 12, 13 of the measuring instrument 2D.

  In the present embodiment, the orientation of the arrangement pattern of the three high-voltage side relay terminals 32-34 is the measurement instrument 2D, the intermediate contactor 4, and the semiconductor device with respect to the orientation of the arrangement pattern of the three low-voltage side relay terminals 35-37. It differs by a predetermined angle with 100 arrangement directions (Z-axis direction) as an axis. The predetermined angle in this embodiment is 180 °.

  As in the case of the contact pins 23-25, 27, and 28 described above, the intermediate contactor 4 of the present embodiment has six relay terminals 32-37 corresponding to one circuit module 101 (one set of contact pin units 21). As a set of relay terminal units 31, three sets of relay terminal units 31 are provided. The relative arrangement of the six relay terminals 32-37 and the direction of the arrangement pattern of the six relay terminals 32-37 are equal to each other among the three sets of relay terminal units 31.

In the present embodiment, the main body portion 42 of the intermediate contactor 4 in which the contact pins 23-25, 27, 28, the relay terminals 32-37, and the wiring portion 41 are disposed is formed in a plate shape. The intermediate contactor 4 of the present embodiment can be configured by a circuit board, for example.
The intermediate contactor 4 is disposed between the measuring instrument 2D and the semiconductor device 100 so that the thickness direction of the intermediate contactor 4 coincides with the arrangement direction (Z-axis direction) of the measuring instrument 2D and the semiconductor device 100.

The plurality of contact pins 23-25, 27, 28 are provided on the main body 42 so as to protrude from one main surface of the main body 42 of the intermediate contactor 4 facing the semiconductor device 100 side. The plurality of contact pins 23-25, 27, 28 are arranged in accordance with the plurality of leads 107-109, 111, 112 of the semiconductor device 100 when viewed from the arrangement direction (Z-axis direction) of the measuring instrument 2 </ b> D and the semiconductor device 100. Has been.
The plurality of relay terminals 32-37 are formed on the other main surface of the main body part 42 of the intermediate contactor 4 facing the measuring instrument 2D.

The moving means 3D according to the present embodiment includes the measuring instrument 2D, the intermediate contactor 4 and the contactor 23-25, 27, 28 of the intermediate contactor 4 in contact with the leads 107-109, 111, 112 of the semiconductor device 100. By relatively moving the semiconductor device 100, the circuit units 102 and 103 connected to the measuring instrument 2D are switched.
The moving means 3D of this embodiment moves the intermediate contactor 4 and the semiconductor device 100 with respect to the measuring instrument 2D as in the first embodiment. Specifically, the moving means 3D of the present embodiment is configured so that the relay terminals 32-34 (35-37) corresponding to one circuit unit 102 (103) are in contact with the measuring elements 11, 12, 13 (contact position CP). ) And a position where the relay terminal 32-34 (35-37) is separated from the measuring element 11, 12, 13 (separated position DP), the intermediate contactor 4 and the semiconductor device 100 are moved in the first direction (Z-axis direction). ). Further, the moving means 3D moves the intermediate contactor 4 and the semiconductor device 100 in the orthogonal direction (X-axis direction and / or Y-axis) perpendicular to the first direction in a state where the intermediate contactor 4 and the semiconductor device 100 are arranged at the separation position DP. Direction). Further, the moving unit 3D rotates the intermediate contactor 4 and the semiconductor device 100 in the rotation direction (the θ direction in FIG. 5) about the first direction as an axis.
On the other hand, the position of the measuring instrument 2D is fixed to the base (not shown) of the inspection apparatus 1D.

Next, an inspection method for the semiconductor device 100 according to the present embodiment will be described.
In the inspection method of the present embodiment, the measurement process and the movement process are repeatedly performed as in the first embodiment. However, in the inspection method of the present embodiment, the preparation process for preparing the intermediate contactor 4 having the above-described configuration before the measurement process and the movement process, and a plurality of contact pins 23-25 of the intermediate contactor 4 as shown in FIG. , 27, and 28 are contacted with the plurality of leads 107-109, 111, and 112 of the semiconductor device 100 in order. In the state after the contactor connection step, the plurality of leads 107-109, 111, 112 are electrically connected to the plurality of relay terminals 32-37 of the intermediate contactor 4, respectively.

  In the measurement process of the present embodiment, the three measuring elements 11, 12, 13 of the measuring instrument 2 </ b> D are connected to the three leads 107, 108, 112 (109, 109) of one circuit unit 102 (103) of the intermediate contactor 4. 111, 112) are brought into contact with the three relay terminals 32-34 (35-37) electrically connected. Thus, the three leads 107, 108, 112 (109, 111, 112) of one circuit unit 102 (103) are individually electrically connected to the three measuring elements 11, 12, 13 of the measuring instrument 2D.

  Further, in the moving process of the present embodiment, the measuring instrument is in a state where the plurality of contact pins 23-25, 27, 28 of the intermediate contactor 4 are in contact with the plurality of leads 107-109, 111, 112 of the semiconductor device 100, respectively. By relatively moving 2D, the intermediate contactor 4 and the semiconductor device 100, the circuit units 102 and 103 connected to the measuring instrument 2D are switched.

  Further, in the intermediate contactor 4 of the present embodiment, the direction of the arrangement pattern of the three relay terminals 32-34 for the high-voltage side circuit unit 102 is the same as the arrangement pattern of the three relay terminals 35-37 for the low-voltage side circuit unit 103. It differs from the orientation by 180 ° (predetermined angle) about the arrangement direction of the measuring instrument 2D, the intermediate contactor 4 and the semiconductor device 100 as an axis. For this reason, in the moving process of this embodiment, after measuring the electrical characteristics of one circuit unit 102 (103) of the high-voltage circuit unit 102 and the low-voltage circuit unit 103, the electrical characteristics of the other circuit unit 103 (102) are measured. In order to measure the target characteristic, the measuring instrument 2D, the intermediate contactor 4 and the semiconductor device 100 are relatively rotated by 180 ° (predetermined angle).

Hereinafter, a procedure for inspecting the semiconductor device 100 using the inspection apparatus 1D of the present embodiment will be specifically described.
In the present embodiment, first, the above-described preparation process and contactor connection process are performed. Next, as shown in FIG. 6, the electrical characteristics (particularly dynamic characteristics) of the high-voltage circuit units 102 of the three circuit modules 101 are measured in order (in order from the left in FIG. 6) by the measuring instrument 2D.

  In this measurement, first, a measuring process is performed on the high-voltage side circuit unit 102 of the first circuit module 101A by the measuring instrument 2D. In this measurement process, the three measuring elements 11, 12, 13 of the measuring instrument 2D are brought into contact with the three high-voltage side relay terminals 32-34 corresponding to the high-voltage side circuit unit 102 of the first circuit module 101A. The two 2D measuring elements 11, 12, and 13 are electrically connected to the three leads 107, 108, and 112 of the high-voltage circuit unit 102 of the first circuit module 101A. When the measuring elements 11, 12, 13 of the measuring instrument 2D are brought into contact with the three leads 107, 108, 112 of the high-voltage side circuit unit 102 of the first circuit module 101A, as shown in FIG. The intermediate contactor 4 and the semiconductor device 100 may be moved from the separation position DP to the contact position CP. Further, a short circuit terminal (not shown) is brought into contact with the source relay terminal 35 and the gate relay terminal 37 corresponding to the low voltage side circuit unit 103 of the first circuit module 101A, for example, so that the low voltage side circuit of the first circuit module 101A is contacted. The source lead 109 and the gate lead 111 of the unit 103 are short-circuited. In this state, the electrical characteristics of the high-voltage circuit unit 102 of the first circuit module 101A are measured by the measuring instrument 2D.

Next, the intermediate contactor 4 and the semiconductor device 100 are moved relative to the measuring instrument 2D by the moving means 3D, and the high voltage side circuit unit 102 connected to the measuring instrument 2D is moved from the high voltage side circuit unit 102 of the first circuit module 101A. A moving step of switching to the high voltage side circuit unit 102 of the second circuit module 101B is performed.
In this moving step, first, as shown in FIG. 5, the intermediate contactor 4 and the semiconductor device 100 are moved from the contact position CP to the separated position DP by the moving means 3D. Thereby, the connection between the measuring instrument 2D and the high voltage side circuit unit 102 of the first circuit module 101A is released. Next, as shown in FIG. 6, the three measuring elements 11, 12, and 13 of the measuring instrument 2D are connected to the three high-voltage side relay terminals 32-34 corresponding to the high-voltage side circuit unit 102 of the second circuit module 101B and the Z-axis. The intermediate contactor 4 and the semiconductor device 100 are moved in the longitudinal direction of the package part 115 (X-axis negative direction) by the moving means 3D so as to overlap in the direction. Finally, as shown in FIG. 5, the intermediate contactor 4 and the semiconductor device 100 are moved from the separation position DP to the contact position CP by the moving means 3D. Thereby, the first measuring instrument 2A and the high-voltage circuit unit 102 of the second circuit module 101B are electrically connected via the intermediate contactor 4. Thus, the moving process is completed.

  After the above moving process, as in the case of the first circuit module 101A, the measuring process is performed on the high-voltage side circuit unit 102 of the second circuit module 101B by the measuring instrument 2D. That is, the three measuring elements 11, 12, 13 of the measuring instrument 2D are brought into contact with the three high-voltage side relay terminals 32-34 corresponding to the high-voltage side circuit unit 102 of the second circuit module 101B. The two measuring elements 11, 12, 13 are electrically connected to the three leads 107, 108, 112 of the high voltage side circuit unit 102 of the second circuit module 101B, and the high voltage side circuit unit 102 of the second circuit module 101B is measured by the measuring instrument 2D. Measure electrical characteristics.

After this measurement process, similar to the movement process described above, the intermediate contactor 4 and the semiconductor device 100 are moved relative to the measuring instrument 2D, and the high-voltage side circuit unit 102 connected to the measuring instrument 2D is moved to the second circuit module 101B. A moving step of switching from the high voltage side circuit unit 102 to the high voltage side circuit unit 102 of the third circuit module 101C is performed.
Finally, as in the case of the first and second circuit modules 101A and 101B, the measurement process is performed on the high-voltage circuit unit 102 of the third circuit module 101C by the measuring instrument 2D, so that the three circuit modules 101 can be obtained. The measurement of the electrical characteristics of the high-voltage side circuit unit 102 is completed.

  After the measurement of the electrical characteristics of the three high-voltage side circuit units 102 is completed, as shown in FIG. 7, the electrical characteristics (particularly the dynamic characteristics) of the low-voltage side circuit units 103 of the three circuit modules 101 are sequentially ( Measurement is performed in order from the left in FIG. Before this measurement, as shown in FIGS. 6 and 7, the intermediate contactor 4 and the semiconductor device 100 are moved with respect to the measuring instrument 2D, and the circuit units 102 and 103 connected to the measuring instrument 2D are connected to the third measuring instrument 2D. A moving step of switching from the high voltage side circuit unit 102 of the circuit module 101C to the low voltage side circuit unit 103 of the third circuit module 101C is performed. In this moving process, the direction of the arrangement pattern of the three low voltage side relay terminals 35-37 corresponding to the low voltage side circuit unit 103 coincides with the direction of the arrangement pattern of the three measuring elements 11, 12, 13 of the measuring instrument 2D. As described above, the intermediate contactor 4 and the semiconductor device 100 are rotated 180 ° about the Z-axis direction by the moving means 3D. In this moving process, when viewed from the Z-axis direction, the three low voltage side relay terminals 35-37 corresponding to the low voltage side circuit unit 103 of the third circuit module 101C are connected to the three measuring elements 11, 12,. The intermediate contactor 4 and the semiconductor device 100 may be appropriately moved in the X-axis direction and the Y-axis direction with respect to the measuring instrument 2D so as to overlap each other.

The measurement procedure of the electrical characteristics of the low voltage side circuit units 103 of the three circuit modules 101 may be the same as the measurement procedure of the electrical characteristics of the high voltage side circuit units 102 of the three circuit modules 101 described above.
That is, first, the measuring process may be performed on the low-voltage circuit unit 103 of the third circuit module 101C by the measuring instrument 2D. In this measurement process, the three measuring elements 11, 12, 13 of the measuring instrument 2D are brought into contact with the three low voltage side relay terminals 35-37 corresponding to the low voltage side circuit unit 103 of the third circuit module 101C. After the three 2D measuring elements 11, 12, and 13 are electrically connected to the three leads 109, 111, and 112 of the low-voltage side circuit unit 103 of the third circuit module 101C, the low voltage of the third circuit module 101C is measured by the measuring instrument 2D. The electrical characteristics of the side circuit unit 103 may be measured. In this measurement process, the drain lead 107 and the gate lead 108 of the high-voltage circuit unit 102 of the third circuit module 101C may be short-circuited by a short-circuit terminal (not shown).

  Next, the intermediate contactor 4 and the semiconductor device 100 are moved relative to the measuring instrument 2D by the moving means 3D, and the low-voltage side circuit unit 103 connected to the measuring instrument 2D is moved from the low-voltage side circuit unit 103 of the third circuit module 101C. What is necessary is just to implement the movement process switched to the low voltage | pressure side circuit unit 103 of the 2nd circuit module 101B.

Thereafter, as in the case of the third circuit module 101C, the measurement process for the low-voltage circuit unit 103 of the second circuit module 101B by the measuring instrument 2D, the intermediate contactor 4 and the semiconductor device 100 are moved with respect to the measuring instrument 2D. Moving step of switching the low-voltage side circuit unit 103 connected to the measuring instrument 2D from the low-voltage side circuit unit 103 of the second circuit module 101B to the low-voltage side circuit unit 103 of the first circuit module 101A, the first circuit module by the measuring instrument 2D What is necessary is just to implement the measurement process with respect to the low voltage | pressure side circuit unit 103 of 101A in order. Thereby, the measurement of the electrical characteristics of the low-voltage circuit unit 103 of the three circuit modules 101 is completed.
Thus, the inspection of the semiconductor device 100 by the inspection apparatus 1D of the present embodiment is completed.

  The order in which the electrical characteristics of the plurality of circuit units 102 and 103 are measured by the inspection apparatus 1D of the present embodiment is not limited to the order described above. For example, after measuring the electrical characteristics of the high voltage side circuit unit 102 and the low voltage side circuit unit 103 of one circuit module 101, the electrical characteristics of the high voltage side circuit unit 102 and the low voltage side circuit unit 103 of the other circuit module 101 are measured. You may measure.

According to the inspection apparatus 1D and the inspection method of the semiconductor device 100 of the present embodiment, the same effects as those of the first embodiment can be obtained.
Further, according to the inspection apparatus 1D and the inspection method of the present embodiment, the intermediate contactor 4 is disposed between the measuring instrument 2D and the semiconductor device 100. Further, in the intermediate contactor 4, the relative positions of the plurality of high-voltage side relay terminals 32-34 electrically connected to the plurality of leads 107, 108, 112 of the high-voltage side circuit unit 102, and the plurality of low-voltage side circuit units 103 The relative positions of the plurality of low-voltage side relay terminals 35-37 that are electrically connected to the leads 109, 111, 112 are equal to each other. Therefore, in the semiconductor device 100, the relative arrangement of the plurality of leads 107-109, 111, and 112 is different between the plurality of circuit units 102 and 103 (the high-voltage side circuit unit 102 and the low-voltage side circuit unit 103). In addition, the number (type) of the measuring instruments 2D used for the inspection of the semiconductor device 100 can be one. Even if the semiconductor device 100 has a different type of circuit unit (a circuit unit in which the relative arrangement of leads is further different) from the high-voltage circuit unit 102 and the low-voltage circuit unit 103, the measuring instrument 2D The number of can be reduced.

  In addition, according to the inspection apparatus 1D and the inspection method of the present embodiment, the measurement instrument 2D, the intermediate contactor 4, and the semiconductor device 100 with the arrangement direction (Z-axis direction) of the measurement instrument 2D, the intermediate contactor 4, and the semiconductor device 100 as axes. And rotate relative to each other. Therefore, the orientation of the arrangement pattern of the plurality of high-voltage side relay terminals 32-34 connected to one high-voltage side circuit unit 102 is such that the plurality of low-voltage side relay terminals 35-37 connected to one low-voltage side circuit unit 103. The electrical characteristics of the high-voltage side circuit unit 102 and the low-voltage side circuit unit 103 (a plurality of circuit units 102 and 103) can be measured with the same measuring instrument 2D even if the orientation of the arrangement pattern differs by a predetermined angle. it can.

  In addition, when the direction of the arrangement pattern of the plurality of high-voltage side relay terminals 32-34 and the direction of the arrangement pattern of the plurality of low-voltage side relay terminals 35-37 are different, the directions of these two arrangement patterns are the same. Compared to the above, the degree of freedom of relative arrangement of the plurality of relay terminals 32-34 (35-37) connected to the same circuit unit 102 (103) is high. For this reason, it becomes possible to set short the wiring part 41 which connects the contact pins 23-25, 27, 28 of the intermediate contactor 4 and the relay terminals 32-37. Thereby, the inductance in the wiring part 41 can be suppressed small, and the dynamic characteristic of the semiconductor device 100 can be measured more accurately.

[Third embodiment]
Next, a third embodiment of the present invention will be described with reference to FIGS. Among the configurations of the present embodiment, the same configurations as those of the first and second embodiments are denoted by the same reference numerals and the description thereof is omitted.

  As shown in FIGS. 8 and 9, the inspection apparatus 1 </ b> E according to this embodiment includes a plurality of circuit units 202 and 203 including semiconductor elements 204 and 205 and leads 206-211 connected to the semiconductor elements 204 and 205. Used for inspection of the apparatus 200. The semiconductor device 200 to be inspected by the inspection apparatus 1E of this embodiment is different from the first and second embodiments.

First, the configuration of the semiconductor device 200 to be inspected will be described.
As shown in FIG. 9, the semiconductor device 200 according to this embodiment includes six circuit units 202 and 203 as in the first and second embodiments. Each circuit unit 202, 203 has one semiconductor element 204, 205. The semiconductor elements 204 and 205 are switching elements having a source electrode, a drain electrode, and a gate electrode. Each circuit unit 202 (203) has three leads 206-208 (209-211) connected to three electrodes of the semiconductor element 204 (205). Three leads 206-208 (209-211) of each circuit unit 202 (203) are a source lead 206 (209), a drain lead 207 (210), and a gate lead 208 (211).

  In the semiconductor device 200 of this embodiment, as in the first and second embodiments, one circuit module 201 is configured by two circuit units 202 and 203 (a first circuit unit 202 and a second circuit unit 203). Yes. However, in the semiconductor device 200 of this embodiment, the two circuit units 202 and 203 of the same circuit module 201 are electrically independent from each other.

  Similar to the first embodiment, the semiconductor device 200 of the present embodiment includes a package unit 215 in which a plurality of semiconductor elements 204 and 205 constituting three circuit modules 201 (six circuit units 202 and 203) are built. The plurality of leads 206-211 constituting the three circuit modules 201 protrude from the package part 215. The electrodes of the semiconductor elements 204 and 205 and the leads 206-211 are electrically connected inside the package portion 215. The three circuit modules 201 are arranged in the longitudinal direction (X-axis direction) of the package unit 215.

  In the semiconductor device 200 of this embodiment, the relative arrangement of the three leads 206-208 (209-211) constituting the same circuit unit 202 (203) is two circuit units constituting the same circuit module 201. 202 and 203 are different. That is, the semiconductor device 200 of the present embodiment includes two types of circuit units 202 and 203 in which the relative arrangement of the three leads 206-208 (209-211) is different from each other. Hereinafter, a specific arrangement of the six leads 206 to 211 in the same circuit module 201 will be described.

  In the same circuit module 201, the source lead 206 and the gate lead 208 of the first circuit unit 202, the drain lead 210 of the second circuit unit 203, the drain lead 207 of the first circuit unit 202, and The source lead 209 and the gate lead 211 of the second circuit unit 203 protrude from the package part 215 in opposite directions in the width direction (Y-axis direction) of the package part 215.

Further, the source lead 206 and the gate lead 208 of the first circuit unit 202 and the drain lead 210 of the second circuit unit 203 projecting in the same direction (Y-axis negative direction) from the package part 215 are connected to the package part 215. Are arranged in this order in the longitudinal direction (X-axis positive direction). Similarly, the drain lead 207 of the first circuit unit 202 and the source lead 209 and the gate lead 211 of the second circuit unit 203 projecting from the package part 215 in the same direction (Y-axis positive direction) The parts 215 are arranged in this order in the longitudinal direction (X-axis positive direction).
The relative arrangement of the plurality of leads 206-211 in the same circuit module 201 and the direction of the arrangement pattern of the plurality of leads 206-211 are equal among the three circuit modules 201.

The inspection apparatus 1E according to this embodiment includes the same measuring instrument 2E, moving means 3E, and intermediate contactor 4E as in the second embodiment. Moreover, the inspection apparatus 1E of this embodiment has a short circuit terminal (not shown) similar to that of the second embodiment.
As in the second embodiment, the measuring instrument 2E includes three measuring elements 11, 12, and 13 that are individually electrically connected to the three leads 206-208 (209-211) of one circuit unit 202 (203). Have. The number of measuring instruments 2E is one. However, in the measuring instrument 2E of the present embodiment, the relative positions of the three measuring elements 11, 12, 13 are different from the measuring instrument 2E of the second embodiment.

  Similar to the second embodiment, the intermediate contactor 4E is disposed between the measuring instrument 2E and the semiconductor device 200, and electrically connects the measuring elements 11, 12, and 13 to the leads 206-211. The intermediate contactor 4E includes a plurality of contact pins 22E-27E, a plurality of relay terminals 32E-37E, and a plurality of wiring portions individually electrically connecting the plurality of contact pins 22E-27E and the plurality of relay terminals 32E-37E. 41E.

The plurality of contact pins 22E-27E are pins that individually contact the plurality of leads 206-211 of the semiconductor device 200. The number of contact pins 22E-27E may be smaller than the number of leads 206-211, for example, but is the same as the number of leads 206-211 in this embodiment. That is, the plurality of contact pins 22 </ b> E- 27 </ b> E individually contact all the leads 206-211 of the semiconductor device 200.
The plurality of relay terminals 32E-37E are terminals for individually contacting the three measuring elements 11, 12, 13 of the measuring instrument 2E. In the present embodiment, the number of relay terminals 32E-37E is the same as the number of contact pins 22E-27E.

  In the present embodiment, the plurality of contact pins 22E-27E are used for the first circuit unit 202 that is in contact with the source lead 206, the drain lead 207, and the gate lead 208 of the first circuit unit 202 of the semiconductor device 200, respectively. There are a source contact pin 22E, a drain contact pin 23E, and a gate contact pin 24E (three first contact pins 22E-24E). Further, the plurality of contact pins 22E-27E include a source contact pin 25E for the second circuit unit 203 that is brought into contact with the source lead 209, the drain lead 210, and the gate lead 211 of the second circuit unit 203, respectively. Contact pin 26E and gate contact pin 27E (three second contact pins 25E-27E).

  In addition, the semiconductor device 200 of the present embodiment has three circuit modules 201 having six leads 206-211. For this reason, the intermediate contactor 4E has three sets of contact pin units 21E, with the six contact pins 22E-27E corresponding to one circuit module 201 as a set of contact pin units 21E. The relative arrangement of the six contact pins 22E-27E in the same contact pin unit 21E and the orientation of the arrangement pattern of the six contact pins 22E-27E are equal to each other among the three sets of contact pin units 21E.

In the present embodiment, the plurality of relay terminals 32E-37E include source relay terminals 32E and 35E that make contact with the source gauge 11 of the measuring instrument 2E, and drain relay terminals 33E that make the drain gauge 12 contact. 36E and gate relay terminals 34E and 37E with which the gate probe 13 is brought into contact.
More specifically, the relay terminals 32E-37E include source relay terminals 32E individually connected to the source contact pins 22E, the drain contact pins 23E, and the gate contact pins 24E for the first circuit unit 202. , The drain relay terminal 33E, the gate relay terminal 34E, and the source contact pin 25E for the second circuit unit 203, the drain contact pin 26E, and the source relay terminal 35E individually connected to the gate contact pin 27E. There are a drain relay terminal 36E and a gate relay terminal 37E.

In the intermediate contactor 4E of this embodiment, the relative positions of the three relay terminals 32E-34E (first relay terminals 32E-34E) for the first circuit unit 202 and the three relay terminals for the second circuit unit 203 are used. The relative positions of 32E-37E (second relay terminals 35E-37E) are equal to each other. The relative positions of the three relay terminals 32E-34E (35E-37E) for each circuit unit 202 (203) are not limited to the illustrated example, and may be arbitrary.
The arrangement of the three relay terminals 32E-34E (35E-37E) for each circuit unit 202 (203) is equal to the arrangement of the three measuring elements 11, 12, 13 of the measuring instrument 2E.

  In this embodiment, the direction of the arrangement pattern of the three first relay terminals 32E-34E is equal to the direction of the arrangement pattern of the three second relay terminals 35E-37E.

  As in the case of the contact pins 22E-27E described above, the intermediate contactor 4E of the present embodiment includes six relay terminals 32E-37E corresponding to one circuit module 201 (one set of contact pin units 21E). The relay terminal unit 31E includes three sets of relay terminal units 31E. The relative arrangement of the six relay terminals 32E-37E and the direction of the arrangement pattern of the six relay terminals 32E-37E are equal to each other among the three sets of relay terminal units 31E.

  The specific configuration of the intermediate contactor 4E is the same as that of the second embodiment. That is, the main body portion 42E of the intermediate contactor 4E on which the contact pins 22E-27E, the relay terminals 32E-37E, and the wiring portions 41E are arranged is formed in a plate shape. The intermediate contactor 4E of the present embodiment can be configured by a circuit board, for example.

  Similarly to the second embodiment, the moving unit 3E of the present embodiment is configured such that the measuring instrument 2E, the intermediate contactor 4E, and the contactor 22E-27E of the intermediate contactor 4E are in contact with the leads 206-212 of the semiconductor device 200. By relatively moving the semiconductor device 200, the circuit units 202 and 203 connected to the measuring instrument 2E are switched.

As in the first and second embodiments, the moving means 3E of the present embodiment is a position where the relay terminals 32E-37E corresponding to one circuit unit 202, 203 are in contact with the measuring elements 11, 12, 13 (contact position). CP) and the intermediate contactor 4E and the semiconductor device 200 are moved in the first direction (Z-axis direction) between the relay terminal 32E-37E and the position where the relay terminals 32E-37E are separated from the measuring elements 11, 12, 13 (separated position DP). . Further, the moving means 3E moves the intermediate contactor 4E and the semiconductor device 200 in the orthogonal direction (X-axis direction and / or Y-axis) orthogonal to the first direction in a state where the intermediate contactor 4E and the semiconductor device 200 are arranged at the separation position DP. Direction). Further, the moving means 3E may rotate the intermediate contactor 4E and the semiconductor device 200 around the first direction as an axis.
The position of the measuring instrument 2E is fixed to the base (not shown) of the inspection apparatus 1E.

Next, an inspection method for the semiconductor device 200 according to the present embodiment will be described.
In the inspection method of the present embodiment, as in the second embodiment, a preparation process for preparing the intermediate contactor 4E of the present embodiment and the contact pins 22E-27E of the intermediate contactor 4E are brought into contact with the leads 206-211 of the semiconductor device 200. After performing the contactor connection process to be performed in order, the measurement process and the movement process may be repeatedly performed.
However, in the intermediate contactor 4E of this embodiment, the direction of the arrangement pattern of the plurality of first relay terminals 32E-34E is equal to the direction of the arrangement pattern of the plurality of second relay terminals 35E-37E. For this reason, in the moving process of the present embodiment, there is no need to relatively rotate the measuring instrument 2E, the intermediate contactor 4E, and the semiconductor device 200, and as in the case of the first embodiment, the measuring instrument 2E and the intermediate contactor 4E. And the semiconductor device 200 may be moved relatively in the Z-axis direction, the X-axis direction, and the Y-axis direction.

  The order of the circuit units 202 and 203 for measuring electrical characteristics (particularly dynamic characteristics) by the inspection apparatus 1E of the present embodiment may be arbitrary. For example, the first circuit unit 202 of the first circuit module 201A, the first circuit unit 202 of the second circuit module 201B, the first circuit unit 202 of the third circuit module 201C, the second circuit unit 203 of the third circuit module 201C, You may measure in order of the 2nd circuit unit 203 of the 2nd circuit module 201B, and the 2nd circuit unit 203 of the 1st circuit module 201A. In this case, the relative moving distance between the measuring instrument 2E, the intermediate contactor 4E, and the semiconductor device 200 can be shortened.

According to the inspection apparatus 1E and the inspection method of the semiconductor device 200 of the present embodiment, the same effects as those of the second embodiment can be obtained.
Further, according to the inspection apparatus 1E and the inspection method of the present embodiment, in the intermediate contactor 4E, the orientation of the arrangement pattern of the plurality of first relay terminals 32E-34E is the same as the arrangement pattern of the plurality of second relay terminals 35E-37E. Equal to orientation. For this reason, the moving unit 3E does not include a mechanism (rotation mechanism) that relatively rotates the intermediate contactor 4E, the semiconductor device 200, and the measuring instrument 2E as in the second embodiment, but the same measuring instrument 2E. Thus, the electrical characteristics of the first circuit unit 202 and the second circuit unit 203 can be measured. That is, the configuration of the moving unit 3E can be simplified and the cost can be reduced.
In addition, the circuit units 202 and 203 connected to the measuring instrument 2E can be switched quickly compared to the case where the moving unit 3E includes a rotation mechanism. Thereby, the inspection of the semiconductor device 200 can be performed in a short time.

  Although the details of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit of the present invention.

  For example, the inspection apparatus 1E in the third embodiment can be applied to the inspection of the semiconductor device 100 in the first and second embodiments. Similarly, the inspection devices 1 and 1D of the first and second embodiments can be applied to the inspection of the semiconductor device 200 of the third embodiment.

  The inspection target of the inspection apparatus of the present invention is not limited to the semiconductor device of the above embodiment, and may be a semiconductor device including at least a plurality of circuit units. That is, the semiconductor element of the semiconductor device may be, for example, a diode having an anode electrode and a cathode electrode. Further, the circuit unit in the semiconductor device may include a plurality of semiconductor elements, for example. Further, the number of leads constituting the same circuit unit may be arbitrary. Further, the number of types of circuit units in which the relative arrangement of the plurality of leads is different from each other is not limited to two, and may be three or more.

1, 1D, 1E Inspection device 2, 2A, 2B, 2D, 2E Measuring instrument 11, 12, 13 Measuring element 3, 3D, 3E Moving means 4, 4E Intermediate contactor 21, 21E Contact pin unit 22, 23, 24 High pressure side Contact pin (first contact pin)
22E, 23E, 24E First contact pins 25, 26, 27 Low pressure side contact pins (second contact pins)
25E, 26E, 27E Second contact pin 31, 31E Relay terminal unit 32, 33, 34 High voltage side relay terminal (first relay terminal)
32E, 33E, 34E First relay terminal 35, 36, 37 Low voltage side relay terminal (second relay terminal)
35E, 36E, 37E Second relay terminal 41, 41E Wiring unit 100 Semiconductor device 101, 101A, 101B, 101C Circuit module 102 High voltage side circuit unit (first circuit unit)
103 Low voltage side circuit unit (second circuit unit)
104, 105 Semiconductor elements 106, 107, 108, 109, 110, 111, 112 Lead 200 Semiconductor device 201, 201A, 201B, 201C Circuit module 202 First circuit unit 203 Second circuit unit 204, 205 Semiconductor elements 206, 207, 208, 209, 210, 211, 212 Lead

Claims (9)

An inspection apparatus used for inspection of a semiconductor device including a plurality of circuit units including a semiconductor element and leads connected to the semiconductor element,
A measuring instrument having a probe electrically connected to the lead of one of the circuit units, and measuring an electrical characteristic of the circuit unit in a state of being electrically connected to the circuit unit;
Moving means for switching the circuit unit connected to the measuring instrument by relatively moving the measuring instrument and the semiconductor device;
A semiconductor device inspection apparatus comprising: The circuit unit has a plurality of the leads connected to the semiconductor element,
The measuring instrument has a plurality of measuring elements individually electrically connected to a plurality of the leads of one circuit unit,
The relative arrangement of the leads in at least the first circuit unit is different from the relative arrangement of the leads in the second circuit unit;
An intermediate contactor disposed between the measuring instrument and the semiconductor device and electrically connecting the measuring element and the lead;
The intermediate contactor individually electrically connects a plurality of contact pins that individually contact the plurality of leads, a plurality of relay terminals that individually contact the plurality of measuring elements, and the plurality of contact pins and the plurality of relay terminals. A plurality of wiring parts to be connected,
Relative positions of a plurality of first relay terminals connected to a plurality of first contact pins to be brought into contact with the plurality of leads of the first circuit unit, and a plurality of contacts to be brought into contact with the plurality of leads of the second circuit unit Relative positions of the plurality of second relay terminals connected to the second contact pins are equal to each other,
The semiconductor device inspection apparatus according to claim 1, wherein the moving unit relatively moves the measuring instrument, the intermediate contactor, and the semiconductor device in a state where the contact pin is in contact with the lead. The direction of the arrangement pattern of the plurality of first relay terminals is a predetermined angle with respect to the direction of the arrangement pattern of the plurality of second relay terminals, with the arrangement direction of the measuring instrument, the intermediate contactor, and the semiconductor device as an axis. Is different,
3. The semiconductor device inspection apparatus according to claim 2, wherein the moving means rotates the measuring instrument, the intermediate contactor, and the semiconductor device relative to each other about the axis.   The inspection apparatus for a semiconductor device according to claim 2, wherein an orientation pattern of the plurality of first relay terminals is equal to an orientation pattern of the plurality of second relay terminals. The circuit unit has a plurality of the leads connected to the semiconductor element,
One measuring instrument has a plurality of measuring elements that are individually contacted and electrically connected to the plurality of leads of one circuit unit,
The semiconductor device has a plurality of types of the circuit units in which the relative arrangement of the leads is different from each other.
The semiconductor device inspection apparatus according to claim 1, further comprising a plurality of types of the measuring devices corresponding to a plurality of the lead arrangement patterns of the circuit units of each type. The moving means moves the semiconductor device,
6. The semiconductor device inspection apparatus according to claim 1, wherein a position of the measuring instrument is fixed. A semiconductor device inspection method for inspecting a semiconductor device including a plurality of circuit units including a semiconductor element and leads connected to the semiconductor element,
A measuring step of electrically connecting a measuring element of a measuring instrument to the lead of one of the circuit units, and measuring an electrical characteristic of the circuit unit by the measuring instrument,
A moving step of switching the circuit unit connected to the measuring instrument by relatively moving the measuring instrument and the semiconductor device, and a method for inspecting the semiconductor device repeatedly. Before the measuring step and the moving step,
A plurality of contact pins that individually contact the plurality of leads of the semiconductor device, a plurality of relay terminals that individually contact the plurality of measuring elements of the measuring instrument, a plurality of the contact pins, and a plurality of the relay terminals A plurality of wiring portions individually electrically connected, and a plurality of first relay terminals connected to a plurality of first contact pins that are brought into contact with the plurality of leads of the first circuit unit of the semiconductor device And an intermediate contactor having the same position and the relative positions of the plurality of second relay terminals connected to the plurality of second contact pins to be brought into contact with the plurality of leads of the second circuit unit of the semiconductor device are prepared. A preparation process to
Sequentially performing a contactor connecting step of bringing the plurality of contact pins of the intermediate contactor into contact with the plurality of leads of the semiconductor device;
In the measuring step, a plurality of the measuring elements of the measuring instrument are brought into contact with a plurality of the relay terminals electrically connected to a plurality of the leads of the circuit unit of one of the intermediate contactors. Electrically connecting a probe to a plurality of the leads of one circuit unit;
In the moving step, the circuit unit connected to the measuring instrument is moved by relatively moving the measuring instrument, the intermediate contactor and the semiconductor device with the contact pin in contact with the lead. The semiconductor device inspection method according to claim 7, wherein switching is performed. The direction of the arrangement pattern of the plurality of first relay terminals is a predetermined angle with respect to the direction of the arrangement pattern of the plurality of second relay terminals, with the arrangement direction of the measuring instrument, the intermediate contactor, and the semiconductor device as an axis. Is different,
The semiconductor device inspection method according to claim 8, wherein in the moving step, the measuring instrument, the intermediate contactor, and the semiconductor device are rotated relative to each other about the axis.

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