JPH04335162A - Inspection device - Google Patents

Inspection device

Info

Publication number
JPH04335162A
JPH04335162A JP3107096A JP10709691A JPH04335162A JP H04335162 A JPH04335162 A JP H04335162A JP 3107096 A JP3107096 A JP 3107096A JP 10709691 A JP10709691 A JP 10709691A JP H04335162 A JPH04335162 A JP H04335162A
Authority
JP
Japan
Prior art keywords
probe
contact
coaxial
sheath
pin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3107096A
Other languages
Japanese (ja)
Inventor
Isao Kinumegawa
衣目川 勲
Tadashi Takagaki
正 高垣
Hironobu Toyoshima
広宣 豊島
Tsunehiro Okamoto
岡元 常洋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Plant Technologies Ltd
Original Assignee
Hitachi Techno Engineering Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Techno Engineering Co Ltd, Hitachi Ltd filed Critical Hitachi Techno Engineering Co Ltd
Priority to JP3107096A priority Critical patent/JPH04335162A/en
Publication of JPH04335162A publication Critical patent/JPH04335162A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To contact certainly a probe with a required position to inspect an object by setting up the probe having an outer side probe pin and an inner side probe pin to retract independently upon contacting it with an inspected object. CONSTITUTION:A coaxial probe 20 has an outer side probe pin 21 and an inner side probe pin 22, the pin 21 can slide within the outer sheath 23 of a copper alloy, and the sheath 23 is fixed to the outer circumference part of an insulating support body 25. A conductive spring seat 26 is set up between the inner sheath 24 and the support body 25, a phosphor bronze-made coil spring 27 lies between the sheath 24 and seat 26. The pins 21, 22 respectively contact certainly with a solder bump, and the pins 21, 22 do not contact each other, because they retract independently in a longitudinal direction when they contact the solder bumps by springs 27, 29.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、検査装置に係り、特に
、半導体の製造において実施されるウェハテスト、又は
、微小基板の製造過程又は製作後のテストを行うのに好
適なプローブを備えた検査装置に関する。
[Industrial Application Field] The present invention relates to an inspection apparatus, and in particular, the present invention relates to an inspection apparatus equipped with a probe suitable for carrying out a wafer test carried out in the manufacture of semiconductors, or a test carried out during or after the manufacture of micro-substrates. Regarding inspection equipment.

【0002】0002

【従来の技術】半導体ウェハや、半導体ウェハマウント
用の微小基板を製造工程中や製造後に検査するため、半
導体ウェハあるいは微小基板にプローブを接触させ、4
端子法で抵抗を測定したり、導通状態を確かめたりする
ことが行われている。
[Prior Art] In order to inspect a semiconductor wafer or a micro-substrate for mounting a semiconductor wafer during or after the manufacturing process, a probe is brought into contact with the semiconductor wafer or micro-substrate.
The terminal method is used to measure resistance and check continuity.

【0003】プローブとしては、片持梁状のプローブや
、棒状のプローブがあり、これらについては、特開平1
−184932 号公報に示されている。
[0003] Probes include cantilever-like probes and rod-like probes, and these are described in Japanese Patent Laid-Open No.
-184932.

【0004】0004

【発明が解決しようとする課題】従来の片持梁り状プロ
ーブは、屈曲した探針をその弾性によって半導体ウェハ
等上の所要個所、たとえば、半田バンプに押圧するもの
であり、半導体高集積化によって、多数存在する半田バ
ンプ間の間隔が狭くなってくると、プローブ同士が接触
して、検査が困難になってきている。
[Problems to be Solved by the Invention] Conventional cantilever probes use their elasticity to press a bent probe against a desired location, such as a solder bump, on a semiconductor wafer, etc. As a result, as the distance between the many solder bumps becomes narrower, the probes come into contact with each other, making inspection difficult.

【0005】この様な問題を解決するべく、棒状プロー
ブが提案されているが、棒状プローブは、棒状探針を半
田バンプに対向させ、探針を半田バンプ間の対向間隔を
無くす様に探針または半導体ウェハを移動させて探針と
半田バンプを接触させるものである。しかし、加工精度
で半田バンプの高さに差があることなどから、探針が半
田バンプに確実に接触しているか否か確認することが非
常に困難であった。
In order to solve this problem, a rod-shaped probe has been proposed, but the rod-shaped probe has a rod-shaped probe facing the solder bump, and the probe is arranged in such a way that the opposing distance between the solder bumps is eliminated. Alternatively, the semiconductor wafer is moved to bring the probe and solder bump into contact. However, because the height of the solder bumps varies depending on processing accuracy, it is extremely difficult to confirm whether the probe is in reliable contact with the solder bumps.

【0006】本発明の目的は、被検査物が微小化しても
、確実に探針を被検査物の所要個所に接触させてテスト
を行うことが可能な検査装置を提供することにある。
[0006] An object of the present invention is to provide an inspection device that is capable of performing a test by bringing a probe into contact with a desired location of an object to be inspected, even if the object to be inspected is miniaturized.

【0007】[0007]

【課題を解決するための手段】上記目的を達成する本発
明の特徴は、被検査物に対向配置されるプローブが同軸
構造で互いに電気的に絶縁され、かつ、個別に沈込可能
な内側プローブおよび外側プローブを有することである
[Means for Solving the Problems] The present invention is characterized in that the probes disposed opposite to the object to be inspected have a coaxial structure and are electrically insulated from each other, and the inner probes are individually sinkable. and having an external probe.

【0008】[0008]

【作用】内側プローブ,外側プローブは、たとえば、半
田バンプに衝合する際、個別に沈込む構造になっている
ので、半田バンプに加工精度上生じる高低差があっても
、先に接触したプローブは他方のプローブが接触するま
で、沈込むので、内外両プローブは半田バンプに確実に
接触する。
[Operation] The inner and outer probes are structured so that they sink individually when they collide with a solder bump, so even if there is a height difference in the solder bump due to processing accuracy, the probe that came into contact first sinks until the other probe makes contact, ensuring that both the inner and outer probes contact the solder bump.

【0009】また、同軸状であることにより、内外両プ
ローブは、沈込みにより相互に軸方向に摺動するだけで
、外側プローブがその内側の部材の支持体になっている
ので、プローブの小型化,細径化が可能で、半導体高集
積化に充分対応可能である。
Furthermore, due to their coaxial configuration, both the inner and outer probes simply slide relative to each other in the axial direction due to sinking, and the outer probe serves as a support for the inner member, allowing the probe to be made smaller. It can be made smaller and smaller in diameter, and is fully compatible with higher integration of semiconductors.

【0010】外側プローブは、全周で半田バンプに接触
する必要はなく、一部で接触していれば良いため、半田
バンプがプローブよりも相対的に小さいものであっても
、両プローブを半田バンプに確実に接触させることがで
きる。また、外側プローブの一部が半田バンプに接触し
ていれば良いので、内側プローブとの相対摺動量の小さ
い範囲でテストを行うことができ、沈込量が小さい沈込
機構とすることができ、従って、小型,細径のプローブ
が実現できて、半導体高集積化に対応可能である。
[0010] The outer probe does not need to be in contact with the solder bump on the entire circumference; it only needs to be in contact with a part of it, so even if the solder bump is relatively smaller than the probe, both probes can be soldered together. It can be brought into reliable contact with the bump. In addition, since it is only necessary that a part of the outer probe is in contact with the solder bump, the test can be performed in a range with a small relative sliding amount with the inner probe, and a sinking mechanism with a small sinking amount can be used. Therefore, it is possible to realize a probe with a small size and a small diameter, and it is possible to cope with high integration of semiconductors.

【0011】[0011]

【実施例】以下、図面に示す一実施例に基づいて本発明
検査装置を説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The inspection apparatus of the present invention will be explained below based on an embodiment shown in the drawings.

【0012】図1は、本発明検査装置の要部の斜視図、
図2は、図1に示す検査装置に用いられる同軸プローブ
ブロックの正面図、図3は図2に示す同軸プローブブロ
ックに組込まれた一個の同軸プローブの部分縦断面図、
図4は図3に示す同軸ブロックが半導体ウェハ上の半田
バンプに接触した状況を示す説明図である。
FIG. 1 is a perspective view of the main parts of the inspection device of the present invention.
2 is a front view of a coaxial probe block used in the inspection device shown in FIG. 1, and FIG. 3 is a partial longitudinal sectional view of one coaxial probe incorporated in the coaxial probe block shown in FIG. 2.
FIG. 4 is an explanatory diagram showing a situation in which the coaxial block shown in FIG. 3 contacts a solder bump on a semiconductor wafer.

【0013】図1において、互いに直角に交差するXお
よびY方向を含む平面内で移動自在なX−Yテーブル1
a,1bの上には、試料台ホルダ4をX−Y平面と垂直
方向に回動させるθテーブル2、その上部にZ方向にお
ける上下動を与えるZテーブル3が組み合わせられてい
る。
In FIG. 1, an X-Y table 1 is movable within a plane including X and Y directions that intersect at right angles to each other.
A and 1b are combined with a θ table 2 that rotates the sample stage holder 4 in a direction perpendicular to the XY plane, and a Z table 3 that provides vertical movement in the Z direction above the θ table 2.

【0014】Zテーブル3の上には試料ホルダ4が取り
外し可能な方法で取り付けられている。試料ホルダ4に
は被検査物5が載置される構造となっている。
A sample holder 4 is removably mounted on the Z table 3. The sample holder 4 has a structure in which an object to be inspected 5 is placed.

【0015】この被検査物5は、たとえば半導体の製造
工程中におけるウェハの処理工程などにおいて、半導体
集積回路素子の形成工程を終えた半導体ウェハ等であっ
て、個々の半導体素子に形成された半田バンプなどの複
数の入出口端子6を上向きにした姿勢で試料ホルダ4に
載置されている。
The object to be inspected 5 is a semiconductor wafer or the like that has completed the process of forming semiconductor integrated circuit elements in, for example, a wafer processing process in a semiconductor manufacturing process, and solder formed on each semiconductor element. It is placed on the sample holder 4 with a plurality of input/output terminals 6 such as bumps facing upward.

【0016】試料ホルダ4の上方には、被検査物5と相
対向する形で、下向きに突設されるプローブブロック7
が設けられている。このプローブブロック7は、図2に
示す様に、格子状に配列された複数個の同軸プローブ2
0を備え、下端部20aはテンプレート7aで位置決め
されている。
A probe block 7 is provided above the sample holder 4 and protrudes downward to face the object to be inspected 5.
is provided. As shown in FIG. 2, this probe block 7 includes a plurality of coaxial probes 2 arranged in a grid pattern.
0, and the lower end portion 20a is positioned by the template 7a.

【0017】同軸プローブ20は、たとえば所定の試験
信号や電源電流などを発生する図示しない試験機に接続
され、四端子法により被検査物5の抵抗等が測定される
The coaxial probe 20 is connected to a tester (not shown) that generates, for example, a predetermined test signal, power supply current, etc., and the resistance, etc. of the test object 5 is measured by a four-terminal method.

【0018】プローブブロックは上固定板8に固定され
ている。上固定板8には左カメラ9,右カメラ10が固
定され各々の光軸はミラー11を介して垂直方向に曲げ
られ被検査物5の入出力端子6の入出力端子又は、この
入出力端子と相対的に位置関係の保たれた検知用マーク
の画像を検出し、セット位置を確認できる構造となって
いる。下方のZテーブルには下カメラ13がとり付けら
れミラー14により光軸が垂直に曲げられ、同軸プロー
ブ20を撮像し、同軸プローブ20の取付固定状況を確
認できる構造となっている。
The probe block is fixed to an upper fixing plate 8. A left camera 9 and a right camera 10 are fixed to the upper fixing plate 8, and the optical axes of each are bent in the vertical direction through a mirror 11 and connected to the input/output terminals of the input/output terminal 6 of the object to be inspected 5 or the input/output terminals of this input/output terminal. The structure is such that the set position can be confirmed by detecting the image of the detection mark that maintains a relative positional relationship with the set position. A lower camera 13 is attached to the lower Z table, and its optical axis is vertically bent by a mirror 14, so that the coaxial probe 20 can be imaged and the installation and fixation status of the coaxial probe 20 can be confirmed.

【0019】同軸プローブ20は、図3に示す様に、外
側プローブピン21と内側プローブピン22をもつ。外
側プローブピン21は銅係合金外シース23内を摺動で
きる様になっている。その摺動距離または沈込量は内シ
ース24の外周に設けられた幅lの溝と外シース23の
内突起23aの係合によって制限される。外シース23
は絶縁性支持体25の外周部に固定されている。内シー
ス24と支持体25の間に導電性ばね座26が設けられ
、内シース24とばね座26の間に燐青銅製のコイルば
ね27が介在されている。支持体25を貫通して内側端
子部材28が設けられている。尚、外シース23は外側
端子部材となっている。端子部材28と内側プローブピ
ン22の間に燐青銅製コイルばね29が介在されている
The coaxial probe 20 has an outer probe pin 21 and an inner probe pin 22, as shown in FIG. The outer probe pin 21 can slide within the copper-based alloy outer sheath 23. The sliding distance or the amount of depression is limited by the engagement of the inner protrusion 23a of the outer sheath 23 with a groove having a width l provided on the outer periphery of the inner sheath 24. Outer sheath 23
is fixed to the outer periphery of the insulating support 25. A conductive spring seat 26 is provided between the inner sheath 24 and the support body 25, and a phosphor bronze coil spring 27 is interposed between the inner sheath 24 and the spring seat 26. An inner terminal member 28 is provided passing through the support body 25. Note that the outer sheath 23 serves as an outer terminal member. A phosphor bronze coil spring 29 is interposed between the terminal member 28 and the inner probe pin 22.

【0020】外側プローブピン21から外シース23へ
直接通電する経路と、外側プローブピン21から内シー
ス24、ばね27,ばね座26を介して外シース23へ
至る通電経路があり、一方、内側プローブピン22と内
側端子部材28間の通電はばね29を介して行われる。 絶縁筒30,31は、内外両プローブピン21,22の
通電経路の混触を避けるためのものである。
There is a current-carrying path directly from the outer probe pin 21 to the outer sheath 23, and a current-carrying path from the outer probe pin 21 to the outer sheath 23 via the inner sheath 24, spring 27, and spring seat 26. Electricity is supplied between the pin 22 and the inner terminal member 28 via a spring 29. The insulating tubes 30 and 31 are provided to prevent the current-carrying paths of the inner and outer probe pins 21 and 22 from coming into contact with each other.

【0021】図3に示す同軸プローブ20は、理解を容
易にするため、縦軸方向よりも横軸方向を拡大して表示
している。実際の寸法の例を示すに、下方のプローブ先
端部から上方の内側端子部材先端部までの長さは約25
mm,外側プローブ21の下側先端部外径は約0.5 
mm、また、内側プローブ22の下側先端部外径は約0
.15mmである。
For ease of understanding, the coaxial probe 20 shown in FIG. 3 is shown enlarged in the horizontal direction rather than in the vertical direction. As an example of actual dimensions, the length from the lower probe tip to the upper inner terminal member tip is approximately 25 mm.
mm, the outer diameter of the lower tip of the outer probe 21 is approximately 0.5
mm, and the outer diameter of the lower tip of the inner probe 22 is approximately 0.
.. It is 15mm.

【0022】この様に極めて細径の同軸プローブ20が
実現できる理由は、外シースばね27,29を設けても
、摺動や係合機構により絶縁筒30,31を介在させて
これらの部材がコンパクトに納められていることによる
The reason why the coaxial probe 20 with such a small diameter can be realized is that even if the outer sheath springs 27 and 29 are provided, these members cannot be connected by interposing the insulating cylinders 30 and 31 by a sliding or engaging mechanism. This is due to its compact size.

【0023】内外両プローブピン21,22はばね27
,29の存在により、半田バンプに接触した時に縦軸方
向に個別に沈み込むので、夫々半田バンプに確実に接触
し、しかも、両プローブ21,22同士が接触すること
はない。
Both the inner and outer probe pins 21 and 22 are springs 27
, 29, the probes 21, 29 sink individually in the vertical axis direction when they come into contact with the solder bumps, so that each probe reliably contacts the solder bumps and, moreover, both probes 21, 22 do not come into contact with each other.

【0024】このように、同軸プローブ20はより細径
化が可能であり、しかも混触を生じることなく、内外両
プローブ21,22を半田バンプに接触させることが可
能であるから、半導体高集積化に充分対応することがで
きる。
In this way, the coaxial probe 20 can be made smaller in diameter, and both the inner and outer probes 21 and 22 can be brought into contact with the solder bumps without causing cross-contact, which makes it possible to achieve high semiconductor integration. can be adequately addressed.

【0025】図4は、同軸プローブ20より半田バンプ
6の寸法が小さくなっている時の接触状況を示している
FIG. 4 shows a contact situation when the size of the solder bump 6 is smaller than that of the coaxial probe 20.

【0026】前述の通り、内外プローブピン21,22
は個別に沈込み、内側プローブピン22が寸法d分だけ
突出し、しかも、外側プローブピン22の一部で半田バ
ンプ6に接触している。この様に、半田バンプ6が一層
小さくなっても両プローブピン21,22は、半田バン
プ6に確実に接触しているので、一層高集積化した半導
体ウェハ5のテストが可能である。尚、5aは配線膜で
ある。
As mentioned above, the inner and outer probe pins 21 and 22
are sunk individually, and the inner probe pin 22 protrudes by a distance d, and a portion of the outer probe pin 22 is in contact with the solder bump 6. In this way, even if the solder bump 6 becomes smaller, both probe pins 21 and 22 are in reliable contact with the solder bump 6, so that it is possible to test a semiconductor wafer 5 with even higher integration. Note that 5a is a wiring film.

【0027】また、図2に示す様に、複数個の同軸プロ
ーブ20が、ブロック化されて、半導体ウェハ5上の多
数の半田バンプ6に当接させても、各同軸プローブ20
の内外プローブピン21,22は、半田バンプに少々の
高低差があっても前記の通り各々の沈込みにより各半田
バンプに確実に接触するので、一回の同軸プローブブロ
ック7の半導体ウェハ5への当接で複数個所のテストが
可能である。
Furthermore, as shown in FIG. 2, even if a plurality of coaxial probes 20 are made into blocks and brought into contact with a large number of solder bumps 6 on a semiconductor wafer 5, each coaxial probe 20
Even if there is a slight height difference between the solder bumps, the inner and outer probe pins 21 and 22 of the coaxial probe block 7 reliably contact each solder bump due to their sinking as described above. It is possible to test multiple locations by contacting the

【0028】上記の実施例では、半導体ウェハ5に対し
、その上方から同軸プローブ20を垂設したが、この実
施例に限定されるものではなく、要は、被検査物に対し
、垂直方向に同軸プローブが相対的に駆動される構成で
あるならば、どんな配置構成でもさしつかえない。
In the above embodiment, the coaxial probe 20 is vertically disposed above the semiconductor wafer 5, but the coaxial probe 20 is not limited to this embodiment. Any arrangement may be used as long as the coaxial probes are relatively driven.

【0029】また、同軸プローブ20自体の構成は、内
外プローブピンが、個別に沈込む構成となっていればど
の様な構成でもよい。
The coaxial probe 20 itself may have any structure as long as the inner and outer probe pins are individually sunk.

【0030】[0030]

【発明の効果】本発明によれば、被検査物が微小化して
も、確実に探針を被検査物の所要個所に接触させてテス
トを行うことが可能な検査装置を提供することができる
[Effects of the Invention] According to the present invention, it is possible to provide an inspection device that can perform a test by reliably bringing the probe into contact with the desired location of the object to be inspected, even if the object to be inspected is miniaturized. .

【図面の簡単な説明】[Brief explanation of drawings]

【図1】本発明検査装置の一実施例を示す要部の斜視図
FIG. 1 is a perspective view of essential parts of an embodiment of the inspection apparatus of the present invention.

【図2】図1に示した検査装置に用いられる同軸プロー
ブブロックの正面図。
FIG. 2 is a front view of a coaxial probe block used in the inspection device shown in FIG. 1.

【図3】図2に示した同軸プローブブロックに用いられ
る同軸プローブの部分縦断面図。
FIG. 3 is a partial longitudinal sectional view of a coaxial probe used in the coaxial probe block shown in FIG. 2;

【図4】図3に示す同軸ブロックと半田バンプとの接触
状況を示す説明図。
FIG. 4 is an explanatory diagram showing a contact situation between the coaxial block shown in FIG. 3 and a solder bump.

【符号の説明】[Explanation of symbols]

5…半導体ウェハ、6…半田バンプ、20…同軸プロー
ブ、21…外側プローブピン、22…内側プローブピン
、23…外シース(外側端子部材)、27,29…ばね
、28…内側端子部材。
5... Semiconductor wafer, 6... Solder bump, 20... Coaxial probe, 21... Outer probe pin, 22... Inner probe pin, 23... Outer sheath (outer terminal member), 27, 29... Spring, 28... Inner terminal member.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】被検査物に垂直に対向させた探針を接触さ
せてテストを行う検査装置において、探針は、被検査物
に対し接触させた時に個別に沈込む手段をもつ外側プロ
ーブピンと内側プローブピンを備えた同軸プローブであ
ることを特徴とする検査装置。
Claim 1: In an inspection device that performs a test by bringing a vertically opposed probe into contact with an object to be inspected, the probe comprises an outer probe pin having means for individually sinking when brought into contact with the object to be inspected. An inspection device characterized in that it is a coaxial probe with an inner probe pin.
JP3107096A 1991-05-13 1991-05-13 Inspection device Pending JPH04335162A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3107096A JPH04335162A (en) 1991-05-13 1991-05-13 Inspection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3107096A JPH04335162A (en) 1991-05-13 1991-05-13 Inspection device

Publications (1)

Publication Number Publication Date
JPH04335162A true JPH04335162A (en) 1992-11-24

Family

ID=14450358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3107096A Pending JPH04335162A (en) 1991-05-13 1991-05-13 Inspection device

Country Status (1)

Country Link
JP (1) JPH04335162A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007285882A (en) * 2006-04-17 2007-11-01 Nidec-Read Corp Board inspection contact, tool, and system
JP2010066017A (en) * 2008-09-08 2010-03-25 Unitech Printed Circuit Board Corp Jig for precisely measuring printed circuit board
JP2016151573A (en) * 2015-02-19 2016-08-22 ルネサスエレクトロニクス株式会社 Method of manufacturing semiconductor device and probe card
WO2018235234A1 (en) * 2017-06-22 2018-12-27 新電元工業株式会社 Contact probe inspection device and control method for contact probe inspection device
WO2018235233A1 (en) * 2017-06-22 2018-12-27 新電元工業株式会社 Contact probe inspection device and control method for contact probe inspection device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007285882A (en) * 2006-04-17 2007-11-01 Nidec-Read Corp Board inspection contact, tool, and system
JP2010066017A (en) * 2008-09-08 2010-03-25 Unitech Printed Circuit Board Corp Jig for precisely measuring printed circuit board
JP2016151573A (en) * 2015-02-19 2016-08-22 ルネサスエレクトロニクス株式会社 Method of manufacturing semiconductor device and probe card
WO2018235234A1 (en) * 2017-06-22 2018-12-27 新電元工業株式会社 Contact probe inspection device and control method for contact probe inspection device
WO2018235233A1 (en) * 2017-06-22 2018-12-27 新電元工業株式会社 Contact probe inspection device and control method for contact probe inspection device
JPWO2018235234A1 (en) * 2017-06-22 2019-06-27 新電元工業株式会社 Contact probe inspection apparatus and control method of contact probe inspection apparatus
JPWO2018235233A1 (en) * 2017-06-22 2019-06-27 新電元工業株式会社 Contact probe inspection apparatus and control method of contact probe inspection apparatus

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