JP2018101681A - 半導体装置および表示装置 - Google Patents

半導体装置および表示装置 Download PDF

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Publication number
JP2018101681A
JP2018101681A JP2016246393A JP2016246393A JP2018101681A JP 2018101681 A JP2018101681 A JP 2018101681A JP 2016246393 A JP2016246393 A JP 2016246393A JP 2016246393 A JP2016246393 A JP 2016246393A JP 2018101681 A JP2018101681 A JP 2018101681A
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Japan
Prior art keywords
electrode
film
oxide semiconductor
semiconductor device
gate electrode
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Pending
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JP2016246393A
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English (en)
Japanese (ja)
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JP2018101681A5 (enExample
Inventor
村井　淳人
Atsuto Murai
淳人 村井
基博 豊田
Motohiro Toyoda
基博 豊田
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Joled Inc
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Joled Inc
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Publication date
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Priority to JP2016246393A priority Critical patent/JP2018101681A/ja
Priority to US15/808,931 priority patent/US10319883B2/en
Publication of JP2018101681A publication Critical patent/JP2018101681A/ja
Publication of JP2018101681A5 publication Critical patent/JP2018101681A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2016246393A 2016-12-20 2016-12-20 半導体装置および表示装置 Pending JP2018101681A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2016246393A JP2018101681A (ja) 2016-12-20 2016-12-20 半導体装置および表示装置
US15/808,931 US10319883B2 (en) 2016-12-20 2017-11-10 Semiconductor device and display unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016246393A JP2018101681A (ja) 2016-12-20 2016-12-20 半導体装置および表示装置

Publications (2)

Publication Number Publication Date
JP2018101681A true JP2018101681A (ja) 2018-06-28
JP2018101681A5 JP2018101681A5 (enExample) 2019-05-30

Family

ID=62561951

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016246393A Pending JP2018101681A (ja) 2016-12-20 2016-12-20 半導体装置および表示装置

Country Status (2)

Country Link
US (1) US10319883B2 (enExample)
JP (1) JP2018101681A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020024411A (ja) * 2018-08-07 2020-02-13 エルジー ディスプレイ カンパニー リミテッド 表示装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12114540B2 (en) * 2018-08-24 2024-10-08 Sharp Kabushiki Kaisha Method for manufacturing display device, and display device
CN109920729B (zh) * 2019-03-27 2022-12-02 合肥鑫晟光电科技有限公司 一种显示基板的制备方法、显示装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012182165A (ja) * 2011-02-28 2012-09-20 Sony Corp 表示装置および電子機器
JP2013251526A (ja) * 2012-06-04 2013-12-12 Samsung Display Co Ltd 薄膜トランジスター、これを備える薄膜トランジスター表示板およびその製造方法
KR20140064310A (ko) * 2012-11-20 2014-05-28 엘지디스플레이 주식회사 디스플레이 장치 및 그 제조방법
US20140291636A1 (en) * 2013-03-26 2014-10-02 Lg Display Co., Ltd. Organic Light Emitting Diode Display Device and Method for Manufacturing the Same
JP2015073094A (ja) * 2013-09-05 2015-04-16 株式会社半導体エネルギー研究所 コンタクト抵抗測定パターンおよび半導体装置
JP2015156486A (ja) * 2014-02-19 2015-08-27 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． 有機発光ディスプレイ装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012015436A (ja) 2010-07-05 2012-01-19 Sony Corp 薄膜トランジスタおよび表示装置
KR20120026970A (ko) * 2010-09-10 2012-03-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 발광 장치
JP6262477B2 (ja) 2013-09-13 2018-01-17 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタ、表示装置用電極基板およびそれらの製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012182165A (ja) * 2011-02-28 2012-09-20 Sony Corp 表示装置および電子機器
JP2013251526A (ja) * 2012-06-04 2013-12-12 Samsung Display Co Ltd 薄膜トランジスター、これを備える薄膜トランジスター表示板およびその製造方法
KR20140064310A (ko) * 2012-11-20 2014-05-28 엘지디스플레이 주식회사 디스플레이 장치 및 그 제조방법
US20140291636A1 (en) * 2013-03-26 2014-10-02 Lg Display Co., Ltd. Organic Light Emitting Diode Display Device and Method for Manufacturing the Same
JP2015073094A (ja) * 2013-09-05 2015-04-16 株式会社半導体エネルギー研究所 コンタクト抵抗測定パターンおよび半導体装置
JP2015156486A (ja) * 2014-02-19 2015-08-27 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． 有機発光ディスプレイ装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020024411A (ja) * 2018-08-07 2020-02-13 エルジー ディスプレイ カンパニー リミテッド 表示装置
JP7030085B2 (ja) 2018-08-07 2022-03-04 エルジー ディスプレイ カンパニー リミテッド 表示装置

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Publication number Publication date
US10319883B2 (en) 2019-06-11
US20180175246A1 (en) 2018-06-21

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