JP2018090586A - スズ化合物、その合成方法、ald用スズ前駆体化合物、及びスズ含有物質膜の形成方法 - Google Patents
スズ化合物、その合成方法、ald用スズ前駆体化合物、及びスズ含有物質膜の形成方法 Download PDFInfo
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- JP2018090586A JP2018090586A JP2017232967A JP2017232967A JP2018090586A JP 2018090586 A JP2018090586 A JP 2018090586A JP 2017232967 A JP2017232967 A JP 2017232967A JP 2017232967 A JP2017232967 A JP 2017232967A JP 2018090586 A JP2018090586 A JP 2018090586A
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- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- VKJLWXGJGDEGSO-UHFFFAOYSA-N barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[Ti+4].[Ba+2] VKJLWXGJGDEGSO-UHFFFAOYSA-N 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- BHXFKXOIODIUJO-UHFFFAOYSA-N benzene-1,4-dicarbonitrile Chemical compound N#CC1=CC=C(C#N)C=C1 BHXFKXOIODIUJO-UHFFFAOYSA-N 0.000 description 1
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- LVFFNAUWELYZIL-UHFFFAOYSA-N butanenitrile pentanenitrile Chemical compound C(CCC)C#N.C(CCC)#N LVFFNAUWELYZIL-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000007833 carbon precursor Substances 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- MGWYSXZGBRHJNE-UHFFFAOYSA-N cyclohexane-1,4-dicarbonitrile Chemical compound N#CC1CCC(C#N)CC1 MGWYSXZGBRHJNE-UHFFFAOYSA-N 0.000 description 1
- VBWIZSYFQSOUFQ-UHFFFAOYSA-N cyclohexanecarbonitrile Chemical compound N#CC1CCCCC1 VBWIZSYFQSOUFQ-UHFFFAOYSA-N 0.000 description 1
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 125000004985 dialkyl amino alkyl group Chemical group 0.000 description 1
- 125000004663 dialkyl amino group Chemical group 0.000 description 1
- 125000004984 dialkylaminoalkoxy group Chemical group 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- HPYNZHMRTTWQTB-UHFFFAOYSA-N dimethylpyridine Natural products CC1=CC=CN=C1C HPYNZHMRTTWQTB-UHFFFAOYSA-N 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- ZTOMUSMDRMJOTH-UHFFFAOYSA-N glutaronitrile Chemical compound N#CCCCC#N ZTOMUSMDRMJOTH-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 1
- NGAZZOYFWWSOGK-UHFFFAOYSA-N heptan-3-one Chemical compound CCCCC(=O)CC NGAZZOYFWWSOGK-UHFFFAOYSA-N 0.000 description 1
- SDAXRHHPNYTELL-UHFFFAOYSA-N heptanenitrile Chemical compound CCCCCCC#N SDAXRHHPNYTELL-UHFFFAOYSA-N 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 150000004677 hydrates Chemical class 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- JQJCSZOEVBFDKO-UHFFFAOYSA-N lead zinc Chemical compound [Zn].[Pb] JQJCSZOEVBFDKO-UHFFFAOYSA-N 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical class [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910001960 metal nitrate Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- BTNXBLUGMAMSSH-UHFFFAOYSA-N octanedinitrile Chemical compound N#CCCCCCCC#N BTNXBLUGMAMSSH-UHFFFAOYSA-N 0.000 description 1
- 239000013110 organic ligand Substances 0.000 description 1
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 238000006864 oxidative decomposition reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- KJXBRHIPHIVJCS-UHFFFAOYSA-N oxo(oxoalumanyloxy)lanthanum Chemical compound O=[Al]O[La]=O KJXBRHIPHIVJCS-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- YWAKXRMUMFPDSH-UHFFFAOYSA-N pentene Chemical compound CCCC=C YWAKXRMUMFPDSH-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- ASRAWSBMDXVNLX-UHFFFAOYSA-N pyrazolynate Chemical compound C=1C=C(Cl)C=C(Cl)C=1C(=O)C=1C(C)=NN(C)C=1OS(=O)(=O)C1=CC=C(C)C=C1 ASRAWSBMDXVNLX-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 229910052705 radium Inorganic materials 0.000 description 1
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 125000004469 siloxy group Chemical group [SiH3]O* 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 125000005353 silylalkyl group Chemical group 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229940071182 stannate Drugs 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- CZXRMHUWVGPWRM-UHFFFAOYSA-N strontium;barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Sr+2].[Ba+2] CZXRMHUWVGPWRM-UHFFFAOYSA-N 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/22—Tin compounds
- C07F7/2284—Compounds with one or more Sn-N linkages
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
SnX2R2+2LiNQ2→Sn(NQ2)2R2+2LiX 反応式II
ここで、Xは、フッ素(F)、塩素(Cl)、臭素(Br)、及びヨード(I)から構成される群から選択される1種以上であり、RとQは、それぞれ独立して、C1−C4の直線状または分枝状のアルキル基である。
本発明の技術的思想によるスズ化合物は、下記化学式Iによっても表示される。
以下では、前記化学式Iのスズ化合物を合成する方法について説明する。
ここで、Xは、フッ素(F)、塩素(Cl)、臭素(Br)及びヨード(I)から構成される群から選択される1種以上であり、1つのSnに結合された4つのXは、互いに同じであってもよく、異なっていてもよい。また、Rは、C1−C4の直線状または分枝状のアルキル基であり、例えば、1つのSnに結合された4つのRは、互いに同じであってもよく、異なっていてもよい。
ここで、Qは、C1−C4の直線状または分枝状のアルキル基であり、例えば、1つの窒素(N)に結合された2つのQは、互いに同じであってもよく、異なっていてもよい。
前述のスズ化合物は、スズを含む物質膜(以下、「スズ含有物質膜」とする)、例えば、スズ金属膜、スズ酸化膜、スズ窒化膜、スズ酸窒化膜またはスズ酸素炭素窒化膜を形成するためのスズ前駆体化合物としても利用される。以下では、原子層蒸着方法によって、スズ酸化物層を形成する方法を中心に説明する。当業者であるならば、類似の方式によって、スズ金属膜、スズ窒化層、スズ酸窒化膜またはスズ酸素炭素窒化膜を形成することができるということを理解するであろう。
以上では、前記スズ含有物質膜がALDによって形成されるということを例示したが、前記スズ前駆体化合物は、化学気相蒸着(CVD:chemical vapor deposition)のための前駆体物質としても利用される。
シングルソース法の場合は、前記他の前駆体として、熱及び/または酸化分解の挙動が本発明の技術的思想によるスズ前駆体化合物と類似した化合物を使用することができる。また、前記カクテルソース法の場合は、前記他の前駆体として、熱及び/または酸化分解の挙動が本発明の技術的思想によるスズ前駆体化合物と類似しており、混合時、化学反応などによる変質を起こさないものを使用することが適する。
本発明の技術的思想による薄膜形成方法によって製造されたスズ含有物質膜は、多様な用途に使用される。例えば、前記スズ含有物質膜は、トランジスタのゲート、金属配線、例えば、銅配線に使用される導電性バリア膜、三次元CTF(charge trap flash)セルに含まれたゲート誘電膜のトンネルバリア膜、液晶用バリア金属膜、薄膜太陽電池用部材、半導体設備用部材、ナノ構造体などにも使用されるが、前記スズ含有物質膜の用途は、前述の素子に限定されるものではない。
化合物Sn[N( i Pr) 2 ] 2 Me 2 の合成
1,000mlフラスコに、SnCl4 100g(0.35モル)及びn−ヘキサン300mlを入れて混合した。アイスバス(ice bath)下で、Sn(Me)4 81.4g(0.455モル)を徐々に添加した。約2時間撹拌し、SnMe2Cl2の合成を完了した。
(分析値)
1H NMR(C6D6):δ 3.42(st,4H、)、1.12(d,24H)、0.38(s,6H)
<評価例1>
化合物Sn[N( i Pr) 2 ] 2 Me 2 の特性評価
図7は、実験例1で得られた化合物Sn[N(iPr)2]2Me2の熱重量分析(TGA:thermogravimetric analysis)結果を示したグラフである。化合物Sn[N(iPr)2]2Me2を10mg取り、アルゴン雰囲気で分当たり10℃の昇温条件にして分析した。
原子層蒸着法(ALD)によって、シリコン基板上にスズ酸化物薄膜を製造した。
化合物Sn[N(Me) 2 ] 2 Me 2 の合成
1,000mlフラスコに、SnCl4 117g(0.45モル)及びn−ヘキサン300mlを入れて混合した。アイスバス内のフラスコに、Sn(Me)4 81.4g(0.455モル)を徐々に添加した。約2時間撹拌し、SnMe2Cl2の合成を完了した。
1H NMR(C6D6):δ 2.76(s,12H)、0.09(s,6H)
<実験例4>
化合物Sn[N(iPr)2]2Me2の代わりに、化合物Sn[N(Me)2]2Me2を利用する以外には、実験例2と同一方法でスズ酸化物の薄膜を形成し、1サイクル当たりスズ酸化物の蒸着厚を各蒸着温度別に測定し、図12に示した。
化合物Sn[N(Me) 2 ] 4 の合成
1,000mlフラスコに、SnCl4 100g(0.35モル)及びn−ヘキサン300mlを入れて混合した。アイスバス内のフラスコに、リチウムジメチルアミド(Li−DMA)80g(1.57モル)をエチルエーテルに希釈して徐々に添加し、常温で8時間撹拌して反応を完了した。反応が完了した後、生成物を濾過することによりLiCl塩を除去して得られた溶液から、減圧下で溶媒及び副生成物を除去した。溶媒を除去した後で精製し、化合物Sn[N(Me)2]4を63g得た(収率:70%)。
1H NMR(C6D6):δ 2.79(s,24H)
スズ酸化物薄膜の形成
化合物Sn[N(iPr)2]2Me2の代わりに、化合物Sn[N(Me)2]4を利用する以外には、実験例2と同一方法でスズ酸化物の薄膜を形成し、1サイクル当たりのスズ酸化物の蒸着厚を各蒸着温度別に測定し、図13に示した。
化合物Sn[N(iPr)2]2Me2の代わりに、化合物Sn(Me)4を利用する以外には、実験例2と同一方法でスズ酸化物の薄膜を形成し、1サイクル当たりのスズ酸化物の蒸着厚を各蒸着温度別に測定し、図14に示した。化合物Sn(Me)4は、シグマ−アルドリッチ(Sigma−Aldrich)社の製品であり、95%グレードを購入して使用した。
110a モノレイヤー
110 スズ含有物質膜
Claims (25)
- 下記化学式Iのスズ化合物であって:
- Q1、Q2、Q3及びQ4は、それぞれ独立して、メチル、エチル、n−プロピル及びイソプロピルから構成される群から選択される1種であることを特徴とする請求項1に記載のスズ化合物。
- Q1、Q2、Q3及びQ4は、互いに同一であり、メチル、エチル、n−プロピル及びイソプロピルから構成される群から選択される1種であることを特徴とする請求項1に記載のスズ化合物。
- R1及びR2は、それぞれ独立して、メチル、エチル、n−プロピル及びイソプロピルから構成される群から選択される1種であることを特徴とする請求項3に記載のスズ化合物。
- R1及びR2は、互いに同一であり、メチル、エチル、n−プロピル及びイソプロピルから構成される群から選択される1種であることを特徴とする請求項4に記載のスズ化合物。
- R1及びR2は、メチル基であり、Q1、Q2、Q3及びQ4は、メチルまたはイソプロピルであって、互いに同一であることを特徴とする請求項1に記載のスズ化合物。
- 20℃で液体状態であることを特徴とする請求項1〜6のいずれか一項に記載のスズ化合物。
- 下記化学式Iの構造を有する原子層蒸着(ALD)用スズ前駆体化合物であって:
- R1及びR2は、それぞれ独立して、メチル、エチル、n−プロピル及びイソプロピルから構成される群から選択される1種であることを特徴とする請求項8に記載のALD用スズ前駆体化合物。
- Q1、Q2、Q3及びQ4は、互いに同一であり、メチル、エチル、n−プロピル及びイソプロピルから構成される群から選択される1種であることを特徴とする請求項9に記載のALD用スズ前駆体化合物。
- 反応空間内の基板上に、下記化学式Iの構造を有するスズ前駆体化合物のモノレイヤーを形成する段階と、
前記モノレイヤー上に反応物を供給し、スズ物質膜を形成する段階と、
未反応の前記反応物をパージし、前記スズ物質膜の表面近傍から除去する段階と、を含むスズ含有物質膜の形成方法であって:
- 前記反応物は、O2、O3、プラズマO2、H2O、NO2、NO、N2O、CO2、H2O2、HCOOH、CH3COOH、(CH3CO)2O、またはそれらの混合物を含み、
前記スズ物質膜は、スズ酸化物膜であることを特徴とする請求項11に記載のスズ含有物質膜の形成方法。 - 前記スズ酸化物膜は、ルチル結晶相を含むことを特徴とする請求項12に記載のスズ含有物質膜の形成方法。
- 前記反応物は、NH3、モノアルキルアミン、ジアルキルアミン、トリアルキルアミン、有機アミン化合物、ヒドラジン化合物、またはそれらの混合物であり、
前記スズ物質膜は、スズ窒化物膜であることを特徴とする請求項11に記載のスズ含有物質膜の形成方法。 - 前記スズ前駆体化合物は、少なくとも270℃ないし350℃の温度範囲で、実質的に一定原子層蒸着速度を有することを特徴とする請求項11に記載のスズ含有物質膜の形成方法。
- 前記スズ前駆体化合物は、少なくとも270℃ないし320℃の温度範囲で、実質的に一定原子層蒸着速度を有することを特徴とする請求項11に記載のスズ含有物質膜の形成方法。
- 前記スズ含有物質膜内に、ハロゲン元素を含まないことを特徴とする請求項11〜16のいずれか一項に記載のスズ含有物質膜の形成方法。
- 反応空間内の基板上に、前記化学式Iの構造を有するスズ前駆体化合物のモノレイヤーを形成する段階において、前記基板上に、前記化学式Iの構造を有するスズ前駆体化合物を1秒ないし100秒間供給することを特徴とする請求項11〜17のいずれか一項に記載のスズ含有物質膜の形成方法。
- 前記スズ含有物質膜が、導電性バリア膜、ゲート誘電膜のトンネルバリア膜、液晶用バリア金属膜、薄膜太陽電池用部材、半導体設備用部材及びナノ構造体のうちいずれか一つであることを特徴とする請求項11〜18のいずれか一項に記載のスズ含有物質膜の形成方法。
- 反応式Iにより、SnX4をSnR4と反応させ、SnX2R2を得る段階と、
反応式IIにより、SnX2R2をLiNQ2と反応させ、Sn(NQ2)2R2を得る段階と、を含むスズ化合物の合成方法であって:
SnX4+SnR4→2SnX2R2 反応式I
SnX2R2+2LiNQ2→Sn(NQ2)2R2+2LiX 反応式II
ここで、Xは、フッ素(F)、塩素(Cl)、臭素(Br)及びヨード(I)から構成される群から選択される1種以上であり、RとQは、それぞれ独立して、C1−C4の直線状または分枝状のアルキル基である、スズ化合物の合成方法。 - Xが塩素であり、Rがメチル基であり、Qがメチル、エチルまたはイソプロピルであることを特徴とする請求項20に記載のスズ化合物の合成方法。
- 前記反応式Iの反応は、0℃ないし15℃の温度で遂行され、
前記反応式IIの反応は、10℃ないし50℃の温度で遂行されることを特徴とする請求項20に記載のスズ化合物の合成方法。 - 反応チャンバ内に基板を提供する段階と、
化学式Iのスズ前駆体のモノレイヤーを形成するために前記基板に、化学式Iの前記スズ前駆体を供給する段階と、
スズ含有物質膜を形成するために前記モノレイヤー上に反応物を供給する段階と、
前記反応チャンバをパージする段階と、を含むスズ含有物質膜の形成方法であって:
- 前記反応物は、O2、O3、プラズマO2、H2O、NO2、NO、N2O、CO2、H2O2、HCOOH、CH3COOH、(CH3CO)2O、またはそれらの混合物を含み、
前記スズ含有物質膜は、スズ酸化物膜であることを特徴とする請求項23に記載のスズ含有物質膜の形成方法。 - 請求項23に記載のスズ含有物質膜の形成方法によって製造されたスズ含有物質膜を含む半導体素子。
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102095710B1 (ko) * | 2019-11-05 | 2020-04-01 | 주식회사 유진테크 머티리얼즈 | 표면 보호 물질을 이용한 박막 형성 방법 |
WO2020105648A1 (ja) * | 2018-11-22 | 2020-05-28 | 三井化学株式会社 | 半導体素子中間体、及び半導体素子中間体の製造方法 |
JP2021073367A (ja) * | 2015-10-13 | 2021-05-13 | インプリア・コーポレイションInpria Corporation | 有機スズオキシドヒドロキシドのパターン形成組成物、前駆体およびパターン形成 |
KR20220041112A (ko) | 2019-08-09 | 2022-03-31 | 가부시키가이샤 고준도가가쿠 겐큐쇼 | 비스(에틸시클로펜타디에닐)주석, 화학 증착용 원료, 주석을 함유하는 박막의 제조 방법 및 주석 산화물 박막의 제조 방법 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017082541A1 (ko) * | 2015-11-11 | 2017-05-18 | 한국화학연구원 | 금속 전구체, 이의 제조방법, 및 이를 이용하여 박막을 형성하는 방법 |
CA2975104A1 (en) | 2017-08-02 | 2019-02-02 | Seastar Chemicals Inc. | Organometallic compounds and methods for the deposition of high purity tin oxide |
JP2021525832A (ja) * | 2018-07-12 | 2021-09-27 | ビーエイエスエフ・ソシエタス・エウロパエアBasf Se | 金属または半金属含有フィルムの製造方法 |
CN110128373B (zh) * | 2019-06-12 | 2023-03-24 | 鸿翌科技有限公司 | 哌嗪基锡配合物及其制备方法、薄膜、太阳能电池 |
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TWI765767B (zh) * | 2020-07-03 | 2022-05-21 | 美商恩特葛瑞斯股份有限公司 | 製備有機錫化合物的方法 |
KR102625156B1 (ko) | 2021-06-17 | 2024-01-15 | 주식회사 이지티엠 | 박막 증착을 위한 유기 주석 화합물 및 이를 이용한 주석 함유 박막의 형성 방법 |
CN116410222B (zh) * | 2023-06-09 | 2023-08-08 | 研峰科技(北京)有限公司 | 一种叔丁基三(二甲氨基)锡烷的合成方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101367141B1 (ko) * | 2007-08-03 | 2014-02-25 | 삼성전자주식회사 | 유기 금속 전구체, 이를 이용한 박막의 형성 방법 및 금속배선의 제조 방법 |
JP5535945B2 (ja) * | 2008-02-27 | 2014-07-02 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 原子層蒸着(ald)法を用いる基板上にチタン含有層を形成する方法 |
KR100954541B1 (ko) | 2008-03-20 | 2010-04-23 | 한국화학연구원 | 신규의 주석 아미노알콕사이드 화합물 및 그 제조 방법 |
US8796483B2 (en) | 2010-04-01 | 2014-08-05 | President And Fellows Of Harvard College | Cyclic metal amides and vapor deposition using them |
KR101255099B1 (ko) | 2011-03-09 | 2013-04-16 | 한국화학연구원 | 플루오르를 포함하는 리간드를 갖는 새로운 주석 화합물 및 그 제조 방법 |
JP5957017B2 (ja) | 2011-03-15 | 2016-07-27 | メカロニックス シーオー. エルティディ.Mecharonics Co. Ltd. | 新規な4b族有機金属化合物及びその製造方法 |
KR20120125102A (ko) | 2011-05-06 | 2012-11-14 | 한국화학연구원 | 원자층 증착법을 이용한 주석산화물 박막의 제조방법 |
KR101540032B1 (ko) | 2012-02-27 | 2015-07-29 | 중앙대학교 산학협력단 | 황화주석 박막 형성용 전구체 및 그의 제조 방법 |
KR101331971B1 (ko) | 2012-05-07 | 2013-11-25 | 한국화학연구원 | 아미노싸이올레이트를 이용한 주석 전구체, 이의 제조방법 및 이를 이용하여 박막을 형성하는 방법 |
KR102235595B1 (ko) * | 2013-07-08 | 2021-04-05 | 삼성디스플레이 주식회사 | 주석 산화물 반도체용 조성물 및 주석 산화물 반도체 박막의 형성 방법 |
KR101610623B1 (ko) | 2014-07-08 | 2016-04-08 | 한국화학연구원 | p형 주석 산화물 박막 제조 및 제어 방법과 이를 이용한 트랜지스터 제조 방법 |
-
2016
- 2016-12-02 KR KR1020160163900A patent/KR20180063754A/ko not_active Application Discontinuation
-
2017
- 2017-11-29 TW TW106141587A patent/TWI794193B/zh active
- 2017-11-30 US US15/827,317 patent/US20180155372A1/en not_active Abandoned
- 2017-12-01 CN CN201711247397.4A patent/CN108149222A/zh active Pending
- 2017-12-04 JP JP2017232967A patent/JP7185394B2/ja active Active
-
2019
- 2019-01-16 US US16/249,067 patent/US10882873B2/en active Active
Non-Patent Citations (7)
Title |
---|
BARRECA, D. ET AL., JOURNAL DE PHYSIQUE IV: PROCEEDINGS, vol. 9, JPN7021003493, 1999, pages 8 - 667, ISSN: 0004583418 * |
BARRECA, D. ET AL., SURFACE SCIENCE SPECTRA, vol. 7, no. 2, JPN7021003492, 2000, pages 81 - 85, ISSN: 0004583417 * |
INGHAM, R. K. ET AL., CHEMICAL REVIEW, vol. 60, JPN6021033899, 1960, pages 459 - 539, ISSN: 0004583421 * |
JOUSSEAUME, B., SCIENCE OF SYNTHESIS, vol. 5, JPN6021033895, 2003, pages 401 - 408, ISSN: 0004583415 * |
NAZAROV, D. V. ET AL.: "Atomic layer deposition of tin dioxide nanofilms: A review", REVIEWS ON ADVANCED MATERIALS SCIENCE, vol. 40, JPN7021003494, 2015, pages 262 - 275, ISSN: 0004583419 * |
PHILLIPS, J. E. ET AL., INORGANIC CHEMISTRY, vol. 25, JPN6021033896, 1986, pages 3081 - 3088, ISSN: 0004583416 * |
ZABARDASTII, A. ET AL., JOURNAL OF HETEROCYCLIC CHEMISTRY, vol. 43, JPN7021003495, 2006, pages 1157 - 1160, ISSN: 0004583420 * |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021073367A (ja) * | 2015-10-13 | 2021-05-13 | インプリア・コーポレイションInpria Corporation | 有機スズオキシドヒドロキシドのパターン形成組成物、前駆体およびパターン形成 |
JP7179816B2 (ja) | 2015-10-13 | 2022-11-29 | インプリア・コーポレイション | 有機スズオキシドヒドロキシドのパターン形成組成物、前駆体およびパターン形成 |
WO2020105648A1 (ja) * | 2018-11-22 | 2020-05-28 | 三井化学株式会社 | 半導体素子中間体、及び半導体素子中間体の製造方法 |
JPWO2020105648A1 (ja) * | 2018-11-22 | 2021-09-27 | 三井化学株式会社 | 半導体素子中間体、及び半導体素子中間体の製造方法 |
JP7075504B2 (ja) | 2018-11-22 | 2022-05-25 | 三井化学株式会社 | 半導体素子中間体、及び半導体素子中間体の製造方法 |
TWI830817B (zh) * | 2018-11-22 | 2024-02-01 | 日商三井化學股份有限公司 | 半導體元件中間體及半導體元件中間體的製造方法 |
KR20220041112A (ko) | 2019-08-09 | 2022-03-31 | 가부시키가이샤 고준도가가쿠 겐큐쇼 | 비스(에틸시클로펜타디에닐)주석, 화학 증착용 원료, 주석을 함유하는 박막의 제조 방법 및 주석 산화물 박막의 제조 방법 |
KR102095710B1 (ko) * | 2019-11-05 | 2020-04-01 | 주식회사 유진테크 머티리얼즈 | 표면 보호 물질을 이용한 박막 형성 방법 |
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CN108149222A (zh) | 2018-06-12 |
TW201829435A (zh) | 2018-08-16 |
US20180155372A1 (en) | 2018-06-07 |
KR20180063754A (ko) | 2018-06-12 |
TWI794193B (zh) | 2023-03-01 |
JP7185394B2 (ja) | 2022-12-07 |
US20190144472A1 (en) | 2019-05-16 |
US10882873B2 (en) | 2021-01-05 |
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