JP2018085371A - Substrate processing device - Google Patents
Substrate processing device Download PDFInfo
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- JP2018085371A JP2018085371A JP2016226009A JP2016226009A JP2018085371A JP 2018085371 A JP2018085371 A JP 2018085371A JP 2016226009 A JP2016226009 A JP 2016226009A JP 2016226009 A JP2016226009 A JP 2016226009A JP 2018085371 A JP2018085371 A JP 2018085371A
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- 239000000758 substrate Substances 0.000 title claims abstract description 56
- 230000005484 gravity Effects 0.000 claims description 14
- 239000010453 quartz Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 235000012431 wafers Nutrition 0.000 description 105
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 230000007423 decrease Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011553 magnetic fluid Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
本発明は、基板処理装置に関する。 The present invention relates to a substrate processing apparatus.
従来から、処理容器内に所定の回転軸周りに回転可能に設けられ、複数の基板を上下方向に所定間隔を有して略水平に保持するウエハボートを使用して、複数の基板に対し、一括（バッチ）で熱処理を行う縦型熱処理装置が知られている。 Conventionally, using a wafer boat that is rotatably provided around a predetermined rotation axis in a processing vessel and holds a plurality of substrates substantially horizontally with a predetermined interval in the vertical direction, A vertical heat treatment apparatus that performs heat treatment in a batch is known.
ウエハボートとしては、例えば上下に対向配置された天板と底板との間に複数本の支柱が設けられ、各支柱の内側面にほぼ等間隔に複数の溝部が形成され、溝部にウエハの周縁部が挿入され支持される構造が知られている（例えば、特許文献１参照）。また、例えば上下に対向配置された天板と底板との間に複数本の支柱が設けられ、複数本の支柱に平らな支持面を備えたリング部材が設けられ、リング部材の支持面でウエハを支持する構造が知られている（例えば、特許文献２参照）。 As a wafer boat, for example, a plurality of support columns are provided between a top plate and a bottom plate that are vertically opposed to each other, and a plurality of groove portions are formed at substantially equal intervals on the inner surface of each support column. A structure in which a portion is inserted and supported is known (see, for example, Patent Document 1). Further, for example, a plurality of support columns are provided between the top and bottom plates opposed to each other vertically, and a ring member having a flat support surface is provided on the plurality of support columns. The structure which supports is known (for example, refer patent document 2).
ところで、このようなウエハボートでは、ウエハを挿入する側と反対側に支柱が配置され、ウエハを挿入する側には支柱が配置されていない。これは、ウエハを挿入する際に、ウエハと支柱とが干渉しないようにするためである。このため、回転軸周りに回転するウエハボートを含む回転体の重心位置は、回転軸の中心から支柱が配置されている側に偏ってしまう。回転体の重心位置が偏ると、ウエハボートが傾いた状態で回転するため、処理容器の内面とウエハボートとが接触しやすくなる。そこで、処理容器の内面とウエハボートとの接触を回避するため、処理容器の内面とウエハボートとの間には、両者が接触することがないように十分な隙間が設けられている。 By the way, in such a wafer boat, the support | pillar is arrange | positioned at the opposite side to the side which inserts a wafer, and the support | pillar is not arrange | positioned at the side which inserts a wafer. This is to prevent interference between the wafer and the support when the wafer is inserted. For this reason, the position of the center of gravity of the rotating body including the wafer boat rotating around the rotation axis is biased from the center of the rotation axis toward the side where the support column is disposed. If the position of the center of gravity of the rotator is biased, the wafer boat rotates while being tilted, so that the inner surface of the processing container and the wafer boat are easily brought into contact with each other. Therefore, in order to avoid contact between the inner surface of the processing container and the wafer boat, a sufficient gap is provided between the inner surface of the processing container and the wafer boat so that they do not contact each other.
しかしながら、処理容器の内面とウエハボートとの隙間が大きくなると、ウエハの中心領域への処理ガスの供給量が低下し、基板処理の面内均一性が低下する。 However, when the gap between the inner surface of the processing container and the wafer boat increases, the amount of processing gas supplied to the central region of the wafer decreases, and the in-plane uniformity of substrate processing decreases.
そこで、本発明の一態様では、基板処理の面内均一性を向上させることが可能な基板処理装置を提供することを目的とする。 In view of the above, an object of one embodiment of the present invention is to provide a substrate processing apparatus capable of improving in-plane uniformity of substrate processing.
上記目的を達成するため、本発明の一態様に係る基板処理装置は、処理容器と、前記処理容器の開口部に挿通可能に設けられ、上下方向に伸びる回転軸と、前記回転軸の上端に設けられた支持部と、前記支持部上に載置され、複数の基板を上下方向に所定間隔を有して略水平に保持する基板保持具と、前記支持部の所定領域に配置され、前記回転軸周りに回転する、前記支持部及び前記基板保持具を含む回転体の重心位置を調整する重心位置調整部材と、を有する。 In order to achieve the above object, a substrate processing apparatus according to an aspect of the present invention is provided with a processing container, a rotation shaft that can be inserted through the opening of the processing container, and extending in the vertical direction, and an upper end of the rotation shaft. A support unit provided, a substrate holder placed on the support unit and holding a plurality of substrates substantially horizontally with a predetermined interval in the vertical direction; and a predetermined region of the support unit, A center-of-gravity position adjusting member that adjusts the position of the center of gravity of the rotating body that rotates around the rotation axis and that includes the support portion and the substrate holder.
開示の基板処理装置によれば、基板処理の面内均一性を向上させることができる。 According to the disclosed substrate processing apparatus, the in-plane uniformity of substrate processing can be improved.
以下、本発明を実施するための形態について図面を参照して説明する。なお、本明細書及び図面において、実質的に同一の構成については、同一の符号を付することにより重複した説明を省く。 Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. In addition, in this specification and drawing, about the substantially same structure, the duplicate description is abbreviate | omitted by attaching | subjecting the same code | symbol.
（基板処理装置）
本発明の実施形態に係る基板処理装置について説明する。図１は、本発明の実施形態に係る基板処理装置の概略縦断面図である。
(Substrate processing equipment)
A substrate processing apparatus according to an embodiment of the present invention will be described. FIG. 1 is a schematic longitudinal sectional view of a substrate processing apparatus according to an embodiment of the present invention.
図１に示されるように、基板処理装置１は、長手方向が鉛直方向である略円筒形の処理容器４を有する。処理容器４は、天井を有する外筒６と、外筒６の内側に同心的に配置され、天井を有する内筒８とを備える２重管構造を有する。内筒８の下端部は外向きに突出するフランジを有し、外筒６の内壁に溶接等によって固定される。外筒６の下端部は外向きに突出するフランジを有し、ステンレス鋼等から形成される円環状のボトムフランジ１０によって外筒６のフランジ下面が支持されている。ボトムフランジ１０は、ボルト等の固定手段によってベースプレートに固定される。 As shown in FIG. 1, the substrate processing apparatus 1 has a substantially cylindrical processing container 4 whose longitudinal direction is the vertical direction. The processing container 4 has a double-pipe structure including an outer cylinder 6 having a ceiling and an inner cylinder 8 that is concentrically disposed inside the outer cylinder 6 and has a ceiling. The lower end portion of the inner cylinder 8 has a flange protruding outward, and is fixed to the inner wall of the outer cylinder 6 by welding or the like. The lower end portion of the outer cylinder 6 has a flange projecting outward, and the lower surface of the flange of the outer cylinder 6 is supported by an annular bottom flange 10 formed of stainless steel or the like. The bottom flange 10 is fixed to the base plate by fixing means such as bolts.
ボトムフランジ１０の下端部の開口部には、例えばステンレス鋼等からなる略円板状のキャップ部１４が、Ｏリング等のシール部材１６を介して気密封止可能に取り付けられている。また、キャップ部１４の略中心部には、例えば磁性流体シール１８により気密状態で回転可能な上下方向に伸びる回転軸２０が挿通されている。回転軸２０の下端は回転機構２２に接続されており、回転軸２０の上端には、例えばステンレス鋼よりなるテーブル２４が固定されている。 A substantially disk-shaped cap portion 14 made of, for example, stainless steel or the like is attached to the opening at the lower end portion of the bottom flange 10 via a seal member 16 such as an O-ring so as to be hermetically sealed. Further, a rotating shaft 20 extending in the up-down direction that can be rotated in an airtight state by a magnetic fluid seal 18 is inserted through a substantially central portion of the cap portion 14. The lower end of the rotating shaft 20 is connected to a rotating mechanism 22, and a table 24 made of, for example, stainless steel is fixed to the upper end of the rotating shaft 20.
テーブル２４上には、例えば石英製の保温筒２６が設置されている。また、保温筒２６上には、例えば石英製のウエハボート２８が載置される。ウエハボート２８は、複数のウエハＷを処理容器４内で上下方向に所定間隔を有して略水平に保持する。ウエハボート２８には、例えば５０〜１５０枚のウエハＷ等の基板が、所定間隔、例えば１０ｍｍ程度の間隔で棚状に収容される。テーブル２４、保温筒２６及びウエハボート２８は、回転軸２０周りに回転する回転体を構成する。 On the table 24, for example, a heat insulating cylinder 26 made of quartz is installed. On the heat retaining cylinder 26, for example, a quartz wafer boat 28 is placed. The wafer boat 28 holds a plurality of wafers W in the processing container 4 substantially horizontally with a predetermined interval in the vertical direction. The wafer boat 28 accommodates, for example, 50 to 150 wafers W or the like in a shelf shape at a predetermined interval, for example, about 10 mm. The table 24, the heat insulating cylinder 26, and the wafer boat 28 constitute a rotating body that rotates around the rotating shaft 20.
図２は、図１の基板処理装置の回転体の構成を示す概略斜視図である。図２では、説明の便宜上、回転体を縦方向に切断した状態を示している。図３は、図２の回転体の保温筒近傍の拡大斜視図である。図４は、図２の回転体の保温筒近傍の拡大断面図である。 FIG. 2 is a schematic perspective view showing the configuration of the rotating body of the substrate processing apparatus of FIG. FIG. 2 shows a state in which the rotating body is cut in the vertical direction for convenience of explanation. 3 is an enlarged perspective view of the vicinity of the heat insulating cylinder of the rotating body of FIG. 4 is an enlarged cross-sectional view of the rotating body of FIG. 2 in the vicinity of the heat insulating cylinder.
図２に示されるように、回転体は、テーブル２４と、保温筒２６と、ウエハボート２８とを有する。ウエハボート２８は、上下に対向配置された天板２８１と底板２８２との間に複数本の支柱２８３が設けられ、各支柱２８３の内側面に複数の溝部２８４が形成された、所謂、ラダーボートである。ウエハＷは、ウエハボート２８の溝部２８４に周縁部が挿入され、支持される。なお、図２では、ウエハＷの図示を省略している。ウエハボート２８には、水平方向からウエハＷが挿入されるため、ウエハボート２８のウエハＷを挿入する側（図２の−Ｙ方向）には、支柱２８３が配置されていない。 As shown in FIG. 2, the rotating body includes a table 24, a heat insulating cylinder 26, and a wafer boat 28. The wafer boat 28 is a so-called ladder boat in which a plurality of support columns 283 are provided between a top plate 281 and a bottom plate 282 that are vertically opposed to each other, and a plurality of grooves 284 are formed on the inner surface of each support column 283. It is. The peripheral edge of the wafer W is inserted into the groove 284 of the wafer boat 28 and supported. In FIG. 2, the wafer W is not shown. Since the wafer W is inserted into the wafer boat 28 from the horizontal direction, the support 283 is not disposed on the side of the wafer boat 28 where the wafer W is inserted (the −Y direction in FIG. 2).
図３及び図４に示されるように、保温筒２６は、上下方向に対向配置された略円板状の天板２６１及び略円板状の底板２６２と、天板２６１と底板２６２との間に設けられた複数本、例えば４本の支柱２６３（図３及び図４では２本のみを示す。）を有する。そして、支柱２６３の途中である天板２６１と底板２６２との間には、複数の略円板状の石英製のフィン２６４が上下方向に所定間隔を有して略水平に設けられている。保温筒２６は、後述するヒータ装置４８からの熱を蓄熱してウエハボート２８の下端部の領域の温度が過度に低下しないように保温する。図２から図４では、保温筒２６とウエハボート２８とを別体として形成しているが、両者を石英により一体成形してもよい。また、保温筒２６は、図示の形態に限定されず、例えば石英により円筒体形状に成形してもよい。 As shown in FIGS. 3 and 4, the heat insulating cylinder 26 includes a substantially disc-shaped top plate 261 and a substantially disc-shaped bottom plate 262 that are opposed to each other in the vertical direction, and the top plate 261 and the bottom plate 262. 4, for example, four columns 263 (only two are shown in FIGS. 3 and 4). Between the top plate 261 and the bottom plate 262 in the middle of the support column 263, a plurality of substantially disc-shaped quartz fins 264 are provided substantially horizontally with a predetermined interval in the vertical direction. The heat retaining cylinder 26 accumulates heat from a heater device 48 to be described later, and keeps the temperature so that the temperature in the lower end portion of the wafer boat 28 does not excessively decrease. In FIG. 2 to FIG. 4, the heat insulating cylinder 26 and the wafer boat 28 are formed separately, but both may be integrally formed of quartz. Moreover, the heat insulation cylinder 26 is not limited to the form shown in the figure, and may be formed into a cylindrical shape using, for example, quartz.
天板２６１及びフィン２６４には、上面視において互いに重なる位置に、それぞれ切欠部２６１ａ及び切欠部２６４ａが形成されている。図示の例では、切欠部２６１ａ及び切欠部２６４ａは、円弧状に形成されている。即ち、切欠部２６１ａ及び切欠部２６４ａが形成されている位置における天板２６１及びフィン２６４の半径Ｒａは、切欠部２６１ａ及び切欠部２６４ａが形成されていない位置における天板２６１及びフィン２６４の半径Ｒよりも小さくなっている。 The top plate 261 and the fin 264 are formed with a notch 261a and a notch 264a, respectively, at positions overlapping each other when viewed from above. In the illustrated example, the notch 261a and the notch 264a are formed in an arc shape. That is, the radius Ra of the top plate 261 and the fin 264 at the position where the notch 261a and the notch 264a are formed is the radius R of the top plate 261 and the fin 264 at the position where the notch 261a and the notch 264a are not formed. Is smaller than
切欠部２６１ａ及び切欠部２６４ａと対応する位置には、上面から見たときの形状が天板２６１及びフィン２６４の周縁に沿った円弧状であるカウンタウエイト９０が設けられている。即ち、カウンタウエイト９０は、保温筒２６の周方向における一部の領域に配置されている。カウンタウエイト９０は、底板２６２上に設けられており、底板２６２と一体的に回転する。カウンタウエイト９０は、例えば保温筒２６と略同一の高さを有している。カウンタウエイト９０は、石英等の耐熱性材料により形成されている。 A counterweight 90 is provided at a position corresponding to the cutout portion 261a and the cutout portion 264a. The counterweight 90 has an arc shape along the periphery of the top plate 261 and the fin 264 when viewed from above. That is, the counterweight 90 is disposed in a partial region in the circumferential direction of the heat retaining cylinder 26. The counterweight 90 is provided on the bottom plate 262 and rotates integrally with the bottom plate 262. The counterweight 90 has substantially the same height as the heat retaining cylinder 26, for example. The counterweight 90 is made of a heat resistant material such as quartz.
カウンタウエイト９０は、底板２６２上においてフィン２６４の径方向（図３及び図４の矢印Ａで示す方向）に移動可能である。カウンタウエイト９０をフィン２６４の径方向に移動させることで、回転軸２０周りに回転する回転体の重心位置を移動させることができる。例えば、カウンタウエイト９０をフィン２６４の径方向の外方（図３及び図４の−Ｙ方向）へ移動させることで、回転体の重心位置をフィン２６４の径方向の外方へ移動させることができる。また、例えばカウンタウエイト９０をフィン２６４の中心方向（図３及び図４の＋Ｙ方向）へ移動させることで、回転体の重心位置をフィン２６４の中心方向へ移動させることができる。カウンタウエイト９０は、後述する制御部１Ａによりその動作が制御される。 The counterweight 90 is movable on the bottom plate 262 in the radial direction of the fins 264 (the direction indicated by the arrow A in FIGS. 3 and 4). By moving the counterweight 90 in the radial direction of the fin 264, the position of the center of gravity of the rotating body rotating around the rotating shaft 20 can be moved. For example, by moving the counterweight 90 outward in the radial direction of the fin 264 (the −Y direction in FIGS. 3 and 4), the center of gravity of the rotating body can be moved outward in the radial direction of the fin 264. it can. Further, for example, by moving the counterweight 90 in the center direction of the fin 264 (the + Y direction in FIGS. 3 and 4), the center of gravity position of the rotating body can be moved in the center direction of the fin 264. The operation of the counterweight 90 is controlled by the control unit 1A described later.
再び、図１を参照すると、キャップ部１４、テーブル２４、保温筒２６、ウエハボート２８及びカウンタウエイト９０は、例えばボートエレベータである昇降機構３０により、処理容器４内に一体となってロード、アンロードされる。 Referring again to FIG. 1, the cap unit 14, the table 24, the heat retaining cylinder 26, the wafer boat 28, and the counterweight 90 are loaded and unloaded together in the processing container 4 by an elevating mechanism 30 that is a boat elevator, for example. Loaded.
ボトムフランジ１０の側面には、処理容器４内に処理ガスを導入するための、ガス導入管８２が設けられる。ガス導入管８２は、継手８３等の固定手段によりガス導入ポート７５に接続されている。外筒６のフランジには、ガス導入ポート７５に対応する位置に貫通孔が形成されている。インジェクタ６０の水平部分が処理容器４内から貫通孔に挿入されると共に、継手８３によってガス導入管８２とインジェクタ６０が接続固定される。 A gas introduction pipe 82 for introducing a processing gas into the processing container 4 is provided on the side surface of the bottom flange 10. The gas introduction pipe 82 is connected to the gas introduction port 75 by fixing means such as a joint 83. A through hole is formed in the flange of the outer cylinder 6 at a position corresponding to the gas introduction port 75. A horizontal portion of the injector 60 is inserted into the through hole from the inside of the processing container 4, and the gas introduction pipe 82 and the injector 60 are connected and fixed by a joint 83.
インジェクタ６０は、ガス導入管８２を経てガス導入ポート７５に供給された処理ガスをウエハＷに供給する。インジェクタ６０は、例えば石英で構成されてもよいし、ＳｉＣ等のセラミクスで構成されてもよい。また、インジェクタ６０は、石英、セラミクスの他、処理容器４の内部を汚染し難い種々の材料を用いて構成することができる。 The injector 60 supplies the processing gas supplied to the gas introduction port 75 via the gas introduction pipe 82 to the wafer W. The injector 60 may be made of, for example, quartz or ceramics such as SiC. In addition, the injector 60 can be configured by using various materials that hardly contaminate the inside of the processing container 4 in addition to quartz and ceramics.
インジェクタ６０の上端部は密封されており、インジェクタ６０の側面には、処理容器４内に収容される複数のウエハＷの被処理面に対して平行に処理ガスを供給するための複数のガス供給孔６１が設けられている。即ち、鉛直方向に所定間隔を有してガス供給孔６１が設けられ、ガス供給孔６１から処理ガスを供給しながらウエハＷを熱処理し、ウエハＷに成膜を行う。よって、ガス供給孔６１は、ウエハＷに近接した側に設けられる。 The upper end portion of the injector 60 is sealed, and a plurality of gas supplies for supplying a processing gas in parallel to the processing surfaces of the plurality of wafers W accommodated in the processing container 4 are provided on the side surfaces of the injector 60. A hole 61 is provided. In other words, the gas supply holes 61 are provided at a predetermined interval in the vertical direction, and the wafer W is heat-treated while supplying the processing gas from the gas supply holes 61 to form a film on the wafer W. Therefore, the gas supply hole 61 is provided on the side close to the wafer W.
また、図１では、ガス導入管８２が１つ設置される場合を示したが、これに限定されず、使用するガス種の数等に応じて複数のガス導入管８２が設置されていてもよい。また、ガス導入ポート７５から処理容器４へと導入されるガスは、ガス供給源８０から供給され、流量制御バルブ８１により、流量制御される。 Further, FIG. 1 shows the case where one gas introduction pipe 82 is installed. However, the present invention is not limited to this, and a plurality of gas introduction pipes 82 may be installed according to the number of gas types to be used. Good. The gas introduced from the gas introduction port 75 into the processing container 4 is supplied from the gas supply source 80 and the flow rate is controlled by the flow rate control valve 81.
また、基板処理装置１には、ガス供給孔６１から供給される処理ガスを高周波電力により発生したプラズマにより活性化する活性化手段が設けられていてもよい。 Further, the substrate processing apparatus 1 may be provided with an activating means for activating the processing gas supplied from the gas supply hole 61 with plasma generated by high frequency power.
外筒６の下部には、ガス出口３６が設けられており、ガス出口３６には排気系３８が連結される。排気系３８は、ガス出口３６に接続された排気通路４０と、排気通路４０の途中に順次接続された圧力調整弁４２及び真空ポンプ４４とを含む。排気系３８により、処理容器４内の圧力を調整しながらガスを排気することができる。 A gas outlet 36 is provided at the lower portion of the outer cylinder 6, and an exhaust system 38 is connected to the gas outlet 36. The exhaust system 38 includes an exhaust passage 40 connected to the gas outlet 36, and a pressure adjustment valve 42 and a vacuum pump 44 sequentially connected in the middle of the exhaust passage 40. The exhaust system 38 can exhaust gas while adjusting the pressure in the processing container 4.
処理容器４の外周側には、処理容器４を囲むようにしてウエハＷ等の基板を加熱するヒータ装置４８が設けられる。 A heater device 48 for heating a substrate such as a wafer W is provided on the outer peripheral side of the processing container 4 so as to surround the processing container 4.
また、ウエハボート２８を介してインジェクタ６０に対向する側の内筒８の側壁には、鉛直方向に沿ってスリット１０１が形成されており、内筒８内のガスを排気できるようになっている。すなわち、インジェクタ６０のガス供給孔６１からウエハＷに向けて供給された処理ガスは、スリット１０１を通って内筒８から内筒８と外筒６との間の空間に流れ、ガス出口３６から処理容器４外に排気される。 A slit 101 is formed along the vertical direction on the side wall of the inner cylinder 8 on the side facing the injector 60 via the wafer boat 28 so that the gas in the inner cylinder 8 can be exhausted. . That is, the processing gas supplied toward the wafer W from the gas supply hole 61 of the injector 60 flows from the inner cylinder 8 to the space between the inner cylinder 8 and the outer cylinder 6 through the slit 101, and from the gas outlet 36. The gas is exhausted out of the processing container 4.
スリット１０１は、上端の位置がウエハボート２８に保持されているウエハＷのうち最上段に保持されているウエハＷの位置よりも上方となるように形成されている。また、スリット１０１は、下端の位置がウエハボート２８に保持されているウエハＷのうち最下段に保持されているウエハＷの位置よりも下方となるように形成されている。 The slit 101 is formed so that the position of the upper end is higher than the position of the wafer W held at the uppermost stage among the wafers W held by the wafer boat 28. The slit 101 is formed such that the lower end position is lower than the position of the wafer W held at the lowermost stage among the wafers W held by the wafer boat 28.
なお、図１では、スリット１０１を示しているが、これに限定されず、処理容器４の鉛直方向に沿って形成された複数の開口部であってもよい。 In FIG. 1, the slit 101 is shown, but the present invention is not limited to this, and a plurality of openings formed along the vertical direction of the processing container 4 may be used.
また、図１に示されるように、基板処理装置１には、基板処理装置１の各部の動作を制御する、例えばコンピュータからなる制御部１Ａが設けられている。制御部１Ａは、プログラム、メモリ、ＣＰＵからなるデータ処理部等を備えている。プログラムには、制御部１Ａから基板処理装置１の各部に制御信号を送り、各種の処理を実行させるように命令（各ステップ）が組み込まれている。プログラムは、例えばフレキシブルディスク、コンパクトディスク、ハードディスク、光磁気ディスク及びメモリーカード等の媒体１Ｃに記憶され、所定の読取装置により記憶部１Ｂへ読み込まれ、制御部１Ａ内にインストールされる。 As shown in FIG. 1, the substrate processing apparatus 1 is provided with a control unit 1 </ b> A composed of, for example, a computer that controls the operation of each unit of the substrate processing apparatus 1. The control unit 1A includes a data processing unit including a program, a memory, and a CPU. In the program, instructions (each step) are incorporated so that a control signal is sent from the control unit 1A to each unit of the substrate processing apparatus 1 to execute various processes. The program is stored in a medium 1C such as a flexible disk, a compact disk, a hard disk, a magneto-optical disk, and a memory card, for example, read into the storage unit 1B by a predetermined reading device, and installed in the control unit 1A.
また、制御部１Ａは、カウンタウエイト９０のウエハＷの径方向への動作を制御する。制御部１Ａは、例えばウエハボート２８に保持されるウエハＷの枚数に基づいて、カウンタウエイト９０の動作を制御してもよい。図５は、ウエハボートに保持されるウエハの枚数とカウンタウエイトの位置との関係を示すテーブルである。制御部１Ａは、ウエハボート２８に保持されるウエハＷの枚数と、予め記憶部１Ｂに記憶されたウエハボート２８に保持されるウエハＷの枚数とカウンタウエイト９０の位置との関係（図５参照）と、に基づいて、カウンタウエイト９０の動作を制御する。 Further, the control unit 1A controls the operation of the counterweight 90 in the radial direction of the wafer W. The controller 1A may control the operation of the counterweight 90 based on the number of wafers W held on the wafer boat 28, for example. FIG. 5 is a table showing the relationship between the number of wafers held on the wafer boat and the position of the counterweight. The control unit 1A determines the number of wafers W held on the wafer boat 28, and the relationship between the number of wafers W held on the wafer boat 28 stored in advance in the storage unit 1B and the position of the counterweight 90 (see FIG. 5). ) And the operation of the counterweight 90 is controlled.
また、制御部１Ａは、回転体の偏心量を検知する検知部９１が検知した偏心量に基づいて、カウンタウエイト９０の動作を制御してもよい。検知部９１は、回転体の偏心量を検知可能であればよく、例えばダイヤルゲージであってよい。 Further, the control unit 1A may control the operation of the counterweight 90 based on the amount of eccentricity detected by the detecting unit 91 that detects the amount of eccentricity of the rotating body. The detection part 91 should just be able to detect the eccentric amount of a rotary body, for example, may be a dial gauge.
（回転体の偏心量）
次に、回転体の偏心量について説明する。図６は、回転体の軸中心からの偏心量を説明するための図である。図６において、径方向は偏心量（ｍｍ）を示し、周方向は角度（度）を示している。また、図６中、曲線Ｍは回転体の軸中心に荷重した状態で、回転体を回転させたときの回転体の偏心量を示し、曲線Ｎは回転体の軸中心から１０ｍｍ偏った位置に荷重した状態で、回転体を回転させたときの回転体の偏心量を示している。
(Eccentricity of rotating body)
Next, the amount of eccentricity of the rotating body will be described. FIG. 6 is a diagram for explaining the amount of eccentricity from the axial center of the rotating body. In FIG. 6, the radial direction indicates the amount of eccentricity (mm), and the circumferential direction indicates the angle (degree). In FIG. 6, curve M shows the amount of eccentricity of the rotating body when the rotating body is rotated with a load applied to the axis center of the rotating body, and curve N is at a position deviated by 10 mm from the axis center of the rotating body. The eccentric amount of the rotating body when the rotating body is rotated in a loaded state is shown.
図６に示されるように、回転体の軸中心から偏った位置に荷重した場合、回転体の軸中心に荷重した場合と比較して、偏心量が大きくなる。このように回転体の偏心量が大きくなると、ウエハボート２８が傾いた状態で回転するため、処理容器４（内筒８）の内面とウエハボート２８とが接触しやすくなる。そこで、処理容器４（内筒８）の内面とウエハボート２８との接触を回避するため、処理容器４（内筒８）の内面とウエハボート２８との間には、両者が接触することがないように十分な隙間Ｓ（図１参照）が設けられている。 As shown in FIG. 6, when the load is applied to a position deviated from the axis center of the rotating body, the amount of eccentricity becomes larger than when the load is applied to the axis center of the rotating body. When the eccentric amount of the rotating body is increased in this manner, the wafer boat 28 rotates in an inclined state, so that the inner surface of the processing container 4 (inner cylinder 8) and the wafer boat 28 are easily brought into contact with each other. Therefore, in order to avoid contact between the inner surface of the processing container 4 (inner cylinder 8) and the wafer boat 28, both may contact between the inner surface of the processing container 4 (inner cylinder 8) and the wafer boat 28. A sufficient gap S (see FIG. 1) is provided so as not to be present.
しかしながら、処理容器４（内筒８）の内面とウエハボート２８との隙間Ｓが大きくなると、ウエハＷの中心領域への処理ガスの供給量が低下し、基板処理の面内均一性が低下する。 However, when the gap S between the inner surface of the processing container 4 (inner cylinder 8) and the wafer boat 28 increases, the amount of processing gas supplied to the central region of the wafer W decreases, and the in-plane uniformity of substrate processing decreases. .
本発明の実施形態に係る基板処理装置は、前述したように、回転軸２０周りに回転する回転体の重心位置を調整するカウンタウエイト９０を有する。これにより、回転軸２０周りに回転する回転体の重心位置を回転軸２０の中心に移動させることができる。このため、回転体がほとんど偏心することなく回転するので、処理容器４（内筒８）の内面とウエハボート２８との隙間Ｓを小さくすることができる。その結果、ウエハＷの中心領域への処理ガスの供給量を増加させることができ、基板処理の面内均一性が向上する。 As described above, the substrate processing apparatus according to the embodiment of the present invention includes the counterweight 90 that adjusts the position of the center of gravity of the rotating body that rotates around the rotating shaft 20. Thereby, the position of the center of gravity of the rotating body rotating around the rotating shaft 20 can be moved to the center of the rotating shaft 20. For this reason, since the rotating body rotates with almost no eccentricity, the gap S between the inner surface of the processing container 4 (inner cylinder 8) and the wafer boat 28 can be reduced. As a result, the supply amount of the processing gas to the central region of the wafer W can be increased, and the in-plane uniformity of the substrate processing is improved.
また、回転体がほとんど偏心することなく回転するので、ウエハボート２８の高さ方向のいずれの位置においても、処理容器４（内筒８）の内面とウエハボート２８との距離が略一定となる。その結果、面間均一性が向上する。また、ウエハＷの水平方向の移載位置を調整する移載機構のティーチングの時間を短縮することができるので、装置立ち上げ時の工数を削減することができる。さらに、磁性流体シール１８に加わる負荷が小さくなるので、磁性流体シール１８の寿命を長くすることができる。 Further, since the rotating body rotates with almost no eccentricity, the distance between the inner surface of the processing vessel 4 (inner cylinder 8) and the wafer boat 28 is substantially constant at any position in the height direction of the wafer boat 28. . As a result, the uniformity between surfaces is improved. In addition, since the teaching time of the transfer mechanism for adjusting the transfer position of the wafer W in the horizontal direction can be shortened, the number of man-hours for starting up the apparatus can be reduced. Furthermore, since the load applied to the magnetic fluid seal 18 is reduced, the life of the magnetic fluid seal 18 can be extended.
（実施例）
実施例では、ウエハボート２８に保持されるウエハＷの水平方向の位置を変化させることで、ウエハＷの表面に形成される膜の膜厚の面内均一性に与える影響について評価した。なお、実施例では、プラズマを使用した原子層堆積（ＡＬＤ：Atomic Layer Deposition）法により、ウエハＷの表面にシリコン窒化膜を形成し、膜厚の面内均一性の測定を行った。
(Example)
In the example, the influence on the in-plane uniformity of the film thickness of the film formed on the surface of the wafer W was evaluated by changing the horizontal position of the wafer W held on the wafer boat 28. In the example, a silicon nitride film was formed on the surface of the wafer W by an atomic layer deposition (ALD) method using plasma, and the in-plane uniformity of the film thickness was measured.
ウエハボート２８に保持されるウエハＷの水平方向の位置を変化させたときの、ウエハＷの表面に形成されたシリコン窒化膜の膜厚の面内均一性の評価結果を図７に示す。図７には、ウエハボート２８の上部（以下「ＴＯＰ」という。）、中央部（以下「ＣＴＲ」という。）及び下部（以下「ＢＴＭ」という。）のそれぞれの領域ごとに、ウエハボート２８に保持されるウエハＷの水平方向の位置を変化させたときの、ウエハＷの表面に形成されたシリコン窒化膜の膜厚の面内均一性が示されている。 FIG. 7 shows the evaluation results of the in-plane uniformity of the film thickness of the silicon nitride film formed on the surface of the wafer W when the horizontal position of the wafer W held on the wafer boat 28 is changed. In FIG. 7, the wafer boat 28 is divided into the upper region (hereinafter referred to as “TOP”), the central portion (hereinafter referred to as “CTR”) and the lower portion (hereinafter referred to as “BTM”) of the wafer boat 28. The in-plane uniformity of the film thickness of the silicon nitride film formed on the surface of the wafer W when the horizontal position of the held wafer W is changed is shown.
ウエハボート２８に保持されるウエハＷの水平方向の位置は以下のとおりである。
・リファレンス
ＴＯＰ：ＲＴ＝０ｍｍ、ＦＢ＝０ｍｍ
ＣＴＲ：ＲＴ＝０ｍｍ、ＦＢ＝０ｍｍ
ＢＴＭ：ＲＴ＝０ｍｍ、ＦＢ＝０ｍｍ
・ティーチング１
ＴＯＰ：ＲＴ＝−０．１５ｍｍ、ＦＢ＝−１．０ｍｍ
ＣＴＲ：ＲＴ＝−０．１０ｍｍ、ＦＢ＝−１．０ｍｍ
ＢＴＭ：ＲＴ＝−０．１５ｍｍ、ＦＢ＝−１．０ｍｍ
・ティーチング２
ＴＯＰ：ＲＴ＝−０．１５ｍｍ、ＦＢ＝−１．０ｍｍ
ＣＴＲ：ＲＴ＝−０．２５ｍｍ、ＦＢ＝−１．０ｍｍ
ＢＴＭ：ＲＴ＝−０．１０ｍｍ、ＦＢ＝−１．０ｍｍ
なお、「ＲＴ」は、図８に示されるように、ウエハボート２８にウエハＷを挿入する移載機構がリファレンス位置から時計回りに回転する方向に移動する距離であり、時計回りの方向が正の方向、反時計回りの方向が負の方向である。また、「ＦＢ」は、図８に示されるように、移載機構がリファレンス位置からウエハＷを挿入する方向（図８における＋Ｙ方向）に移動する距離であり、ウエハＷを挿入する方向が正の方向、ウエハＷを搬出する方向が負の方向である。リファレンス位置とは、移載機構にティーチングを行う前のウエハＷが保持される位置である。
The horizontal position of the wafer W held on the wafer boat 28 is as follows.
・ Reference TOP: RT = 0mm, FB = 0mm
CTR: RT = 0mm, FB = 0mm
BTM: RT = 0mm, FB = 0mm
・ Teaching 1
TOP: RT = −0.15 mm, FB = −1.0 mm
CTR: RT = −0.10 mm, FB = −1.0 mm
BTM: RT = −0.15 mm, FB = −1.0 mm
・ Teaching 2
TOP: RT = −0.15 mm, FB = −1.0 mm
CTR: RT = −0.25 mm, FB = −1.0 mm
BTM: RT = −0.10 mm, FB = −1.0 mm
As shown in FIG. 8, “RT” is the distance that the transfer mechanism for inserting the wafer W into the wafer boat 28 moves in the clockwise direction from the reference position, and the clockwise direction is normal. The counterclockwise direction is the negative direction. Further, “FB” is the distance that the transfer mechanism moves in the direction of inserting the wafer W from the reference position (the + Y direction in FIG. 8), as shown in FIG. 8, and the direction of inserting the wafer W is normal. The direction in which the wafer W is unloaded is the negative direction. The reference position is a position where the wafer W before teaching the transfer mechanism is held.
図７に示されるように、ティーチング１及びティーチング２では、ＴＯＰ、ＣＴＲ及びＢＴＭのいずれの位置においても、リファレンスと比較して、ウエハＷに形成されたシリコン窒化膜の膜厚の面内均一性が向上した。この結果から、ウエハボート２８に保持されるウエハＷの位置を、ウエハボート２８のウエハＷを挿入する側に移動させることで、ウエハＷの表面に形成されるシリコン窒化膜の膜厚の面内均一性を向上させることができることが分かった。 As shown in FIG. 7, in teaching 1 and teaching 2, in-plane uniformity of the film thickness of the silicon nitride film formed on the wafer W compared to the reference at any position of TOP, CTR, and BTM. Improved. From this result, the position of the wafer W held on the wafer boat 28 is moved to the side where the wafer W is inserted into the wafer boat 28, so that the in-plane thickness of the silicon nitride film formed on the surface of the wafer W is increased. It has been found that uniformity can be improved.
また、ウエハボート２８に保持されるウエハＷの水平方向の位置を変化させることは、擬似的に回転体の重心位置を変化させて偏心量を調整していると考えることができる。このことを考慮すると、回転体の偏心量を調整することにより、ウエハＷの表面に形成されるシリコン窒化膜の膜厚の面内均一性を制御することができると考えられる。特に、回転体の偏心量を小さくすることにより、ウエハＷの表面に形成されるシリコン窒化膜の膜厚の面内均一性を向上させることができると考えられる。 Further, changing the position of the wafer W held in the wafer boat 28 in the horizontal direction can be considered to adjust the amount of eccentricity by changing the position of the center of gravity of the rotating body in a pseudo manner. Considering this, it is considered that the in-plane uniformity of the film thickness of the silicon nitride film formed on the surface of the wafer W can be controlled by adjusting the amount of eccentricity of the rotating body. In particular, it is considered that the in-plane uniformity of the thickness of the silicon nitride film formed on the surface of the wafer W can be improved by reducing the amount of eccentricity of the rotating body.
なお、上記の実施形態において、テーブル２４及び保温筒２６は支持部の一例である。ウエハボート２８は基板保持具の一例である。インジェクタ６０はガス供給手段の一例である。カウンタウエイト９０は重心位置調整部材の一例である。 In the above-described embodiment, the table 24 and the heat retaining cylinder 26 are examples of support portions. The wafer boat 28 is an example of a substrate holder. The injector 60 is an example of a gas supply unit. The counterweight 90 is an example of a gravity center position adjusting member.
以上、本発明を実施するための形態について説明したが、上記内容は、発明の内容を限定するものではなく、本発明の範囲内で種々の変形及び改良が可能である。 As mentioned above, although the form for implementing this invention was demonstrated, the said content does not limit the content of invention, Various deformation | transformation and improvement are possible within the scope of the present invention.
上記の実施形態では、上下に対向配置された天板と底板との間に複数本の支柱が設けられ、各支柱の内側面に複数の溝部が形成され、溝部にウエハＷの周縁部が挿入され支持される、所謂、ラダーボートを例に挙げて説明したが、本発明はこれに限定されない。例えば、上下に対向配置された天板と底板との間に複数本の支柱が設けられ、複数本の支柱に平らな支持面を備えたリング部材が設けられ、リング部材の支持面でウエハＷを支持する、所謂、リングボートにも本発明を適用することができる。 In the above embodiment, a plurality of columns are provided between the top and bottom plates opposed to each other in the vertical direction, a plurality of grooves are formed on the inner surface of each column, and the periphery of the wafer W is inserted into the grooves. However, the present invention is not limited to this, although a so-called ladder boat has been described as an example. For example, a plurality of columns are provided between a top plate and a bottom plate that are opposed to each other in the vertical direction, a ring member having a flat support surface is provided on the plurality of columns, and the wafer W is supported on the support surface of the ring member. The present invention can also be applied to so-called ring boats that support the above.
１ 基板処理装置
１Ａ 制御部
４ 処理容器
８ 内筒
２６ 保温筒
２８ ウエハボート
６０ インジェクタ
９０ カウンタウエイト
Ｗ ウエハ
DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 1A Control part 4 Processing container 8 Inner cylinder 26 Thermal insulation cylinder 28 Wafer boat 60 Injector 90 Counterweight W Wafer
Claims (12)
前記処理容器の開口部に挿通可能に設けられ、上下方向に伸びる回転軸と、
前記回転軸の上端に設けられた支持部と、
前記支持部上に載置され、複数の基板を上下方向に所定間隔を有して略水平に保持する基板保持具と、
前記支持部の所定領域に配置され、前記回転軸周りに回転する、前記支持部及び前記基板保持具を含む回転体の重心位置を調整する重心位置調整部材と、
を有する、基板処理装置。 A processing vessel;
A rotation shaft that is provided so as to be insertable into the opening of the processing container and extends in the vertical direction;
A support portion provided at an upper end of the rotating shaft;
A substrate holder placed on the support and holding the plurality of substrates substantially horizontally with a predetermined interval in the vertical direction;
A center-of-gravity position adjusting member that adjusts the position of the center of gravity of the rotating body that is disposed in a predetermined region of the support portion and rotates around the rotation axis, including the support portion and the substrate holder;
A substrate processing apparatus.
請求項１に記載の基板処理装置。 The predetermined area is a partial area in the circumferential direction of the support portion.
The substrate processing apparatus according to claim 1.
請求項２に記載の基板処理装置。 The center-of-gravity position adjusting member has an arc shape along the periphery of the support portion when viewed from above.
The substrate processing apparatus according to claim 2.
前記重心位置調整部材は、前記底板上に配置されている、
請求項１乃至３のいずれか一項に記載の基板処理装置。 The support portion includes a heat insulating cylinder including a top plate and a bottom plate opposed to each other in the vertical direction, and a plurality of quartz fins provided between the top plate and the bottom plate,
The center-of-gravity position adjusting member is disposed on the bottom plate.
The substrate processing apparatus as described in any one of Claims 1 thru | or 3.
請求項４に記載の基板処理装置。 The center-of-gravity position adjustment member is movable in the radial direction of the substrate.
The substrate processing apparatus according to claim 4.
請求項５に記載の基板処理装置。 A control unit for controlling the operation of the gravity center position adjusting member;
The substrate processing apparatus according to claim 5.
請求項６に記載の基板処理装置。 The control unit controls the operation of the gravity center position adjusting member based on the number of the substrates held by the substrate holder.
The substrate processing apparatus according to claim 6.
請求項６に記載の基板処理装置。 The control unit controls the operation of the gravity center position adjusting member based on the amount of eccentricity of the rotating body.
The substrate processing apparatus according to claim 6.
請求項１乃至８のいずれか一項に記載の基板処理装置。 The center-of-gravity position adjusting member is made of quartz,
The substrate processing apparatus according to claim 1.
請求項１乃至９のいずれか一項に記載の基板処理装置。 Gas supply means for supplying a processing gas in parallel to the surfaces to be processed of the plurality of substrates;
The substrate processing apparatus as described in any one of Claims 1 thru | or 9.
請求項１乃至１０のいずれか一項に記載の基板処理装置。 The substrate holder is a ladder boat,
The substrate processing apparatus according to claim 1.
請求項１乃至１０のいずれか一項に記載の基板処理装置。 The substrate holder is a ring boat,
The substrate processing apparatus according to claim 1.
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| CN117690835B (en) * | 2023-10-30 | 2024-05-28 | 浙江浩鑫半导体材料有限公司 | Quartz boat support for photovoltaic semiconductor production |
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