JP2019212923A - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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JP2019212923A
JP2019212923A JP2019149622A JP2019149622A JP2019212923A JP 2019212923 A JP2019212923 A JP 2019212923A JP 2019149622 A JP2019149622 A JP 2019149622A JP 2019149622 A JP2019149622 A JP 2019149622A JP 2019212923 A JP2019212923 A JP 2019212923A
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processing
wall
mounting
wafer
mounting table
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JP6796692B2 (en
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網倉　学
Manabu Amikura
学 網倉
寿樹 日向
Toshiki Hinata
寿樹 日向
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Tokyo Electron Ltd
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Abstract

To process a plurality of substrates independently and uniformly in a plane, in a processing container.SOLUTION: A wafer processing apparatus has: a processing container for housing a wafer airtightly; a plurality of mounting tables for mounting wafers in the processing container; a process gas supply section for supplying a process gas from above the mounting table toward the wafer; an exhaust mechanism for exhausting the inside of the processing container; a barrier wall arranged in the processing container and surrounding the mounting tables individually while spacing apart from the outer periphery of each mounting table; and a cylindrical inner wall 15 arranged on a bottom surface of the processing container, and surrounding the mounting tables individually while spacing apart from the outer periphery of the mounting tables. Slits 15c are formed in the inner wall 15, and the process gas in the processing space is discharged via the slits. The inner wall 15 is arranged below a substrate mounting surface of the mounting tables. The slit 15c is arranged below the mounting surface of the mounting tables which is a side surface of the inner wall 15 and is arranged continuously to a bottom surface of the processing container.SELECTED DRAWING: Figure 4

Description

本発明は、所定の処理ガスを用いて基板処理を行う基板処理装置に関する。   The present invention relates to a substrate processing apparatus that performs substrate processing using a predetermined processing gas.

近年、半導体デバイスの微細化に伴い、ドライエッチングやウェットエッチングといった従来のエッチング技術に代えて、化学的酸化物除去（Ｃｈｅｍｉｃａｌ Ｏｘｉｄｅ Ｒｅｍｏｖａｌ：ＣＯＲ）処理と呼ばれる、より微細化エッチングが可能な手法が用いられている。   In recent years, with the miniaturization of semiconductor devices, instead of conventional etching techniques such as dry etching and wet etching, a technique called chemical oxide removal (COR) treatment that enables finer etching is used. It has been.

ＣＯＲ処理は、真空に保持された処理容器内において、例えば被処理体としての半導体ウェハ（以下、「ウェハ」という）に対して処理ガスを供給し、これらのガスと例えばウェハ上に形成された膜とを反応させて生成物を生成する処理である。ＣＯＲ処理によりウェハ表面に生成された生成物は、次工程で加熱処理を行うことで昇華し、これによりウェハ表面の膜が除去される。   In the COR processing, a processing gas is supplied to, for example, a semiconductor wafer (hereinafter referred to as “wafer”) as an object to be processed in a processing container held in a vacuum, and these gases are formed on the wafer, for example. This is a process for producing a product by reacting with a membrane. The product generated on the wafer surface by the COR process is sublimated by performing a heat treatment in the next step, whereby the film on the wafer surface is removed.

このようなＣＯＲ処理は、ウェハを一枚ずつ処理する枚葉式の処理装置で行われるが、近年では、スループットの向上を図るために、複数枚のウェハを同時に処理する処理装置が用いられる場合がある（特許文献１）。   Such COR processing is performed by a single wafer processing apparatus that processes wafers one by one. However, in recent years, in order to improve throughput, a processing apparatus that simultaneously processes a plurality of wafers is used. (Patent Document 1).

特許文献１の処理装置では、複数枚、例えば２枚のウェハ表面において処理ガスの流れが不均一になることを防止するために、処理容器内を処理空間と排気空間に仕切るバッフル板を設けることが提案されている。   In the processing apparatus of Patent Document 1, a baffle plate that divides the inside of a processing container into a processing space and an exhaust space is provided in order to prevent the flow of processing gas from becoming uneven on the surface of a plurality of wafers, for example, two wafers. Has been proposed.

特開２００７−２１４５１３号公報JP 2007-214513 A

しかしながら、近年、ウェハ処理の均一性の要求が厳しくなっており、上述のような２枚のウェハを同時に処理する処理装置では、各ウェハ表面での処理ガスの均一性を確保することが困難であった。   However, in recent years, the demand for uniformity of wafer processing has become strict, and it is difficult to ensure the uniformity of the processing gas on the surface of each wafer in a processing apparatus that processes two wafers as described above. there were.

また、２枚のウェハを同時に処理する処理装置では、各ウェハを別個独立したレシピで並行して処理したいという要求もあり、各ウェハに対して独立した処理空間を形成することも望まれている。   Further, in a processing apparatus that processes two wafers at the same time, there is a demand for processing each wafer in parallel using separate and independent recipes, and it is also desired to form an independent processing space for each wafer. .

本発明はかかる点に鑑みてなされたものであり、処理容器内で複数の基板を独立して、且つ面内均一に処理することを目的としている。   This invention is made | formed in view of this point, and it aims at processing a some board | substrate independently in a process container and in-plane uniformly.

上記目的を達成するため、本発明は、基板を処理する基板処理装置であって、基板を気密に収容する処理容器と、前記処理容器内で基板を載置する複数の載置台と、前記載置台の上方から前記載置台に向けて処理ガスを供給する処理ガス供給部と、前記処理容器内を排気する排気機構と、前記処理容器内に配置され、前記各載置台の外周と間隔をあけて当該載置台を囲う隔壁と、前記処理容器の底面に配置され、前記載置台の外周と間隔をあけて当該載置台を囲う円筒形状のインナーウォールと、を有し、前記隔壁と前記インナーウォールにより基板の処理空間が形成され、前記インナーウォールには、スリットが形成され、前記処理空間内の処理ガスの排気は、前記スリットを介して行われ、前記インナーウォールは、前記載置台の基板載置面よりも下方に配置され、前記スリットは、前記インナーウォールの側面であって前記載置台の載置面よりも下方に設けられ、且つ、前記処理容器の底面まで設けられていることを特徴としている。   In order to achieve the above object, the present invention provides a substrate processing apparatus for processing a substrate, wherein the processing container for hermetically storing the substrate, a plurality of mounting tables for mounting the substrate in the processing container, A processing gas supply unit that supplies a processing gas from above the mounting table toward the mounting table, an exhaust mechanism that exhausts the inside of the processing container, and an outer periphery of each mounting table that is disposed in the processing container. A partition wall that surrounds the mounting table, and a cylindrical inner wall that is disposed on the bottom surface of the processing container and surrounds the mounting table with a space from the outer periphery of the mounting table, and the partition wall and the inner wall A processing space for the substrate is formed, a slit is formed in the inner wall, exhaust of processing gas in the processing space is performed through the slit, and the inner wall is mounted on the substrate of the mounting table. The slit is disposed below the surface, the slit is a side surface of the inner wall, is provided below the mounting surface of the mounting table, and is provided to the bottom surface of the processing container. Yes.

本発明によれば、複数の載置台を個別に囲む隔壁とインナーウォールを有しているので、各載置台毎に個別に処理空間を形成できる。そして、インナーウォールに形成されたスリットから処理空間内の処理ガスを排気するので、各基板毎にガス流れの均一性を確保し、面内均一な基板処理を行うことができる。   According to the present invention, since the partition wall and the inner wall that individually surround the plurality of mounting tables are provided, a processing space can be individually formed for each mounting table. Then, since the processing gas in the processing space is exhausted from the slit formed in the inner wall, the uniformity of the gas flow can be ensured for each substrate, and the in-plane uniform substrate processing can be performed.

前記インナーウォールは、前記処理空間内の処理ガスが前記スリットに直接流れ込まないように迂回させる仕切板を備え、前記仕切板は、前記インナーウォールの中心から前記スリットを視認できなくなる位置に配置されていてもよい。   The inner wall includes a partition plate that bypasses the processing gas in the processing space so as not to flow directly into the slit, and the partition plate is disposed at a position where the slit cannot be seen from the center of the inner wall. May be.

本発明によれば、処理容器内で複数の基板を独立して、且つ面内均一に処理することができる。   According to the present invention, a plurality of substrates can be independently and uniformly processed in a processing container.

本実施の形態に係る基板処理装置の構成の概略を示す縦断面図である。It is a longitudinal cross-sectional view which shows the outline of a structure of the substrate processing apparatus which concerns on this Embodiment. 隔壁の構成の概略を示す斜視図である。It is a perspective view which shows the outline of a structure of a partition. 他の実施の形態に係る基板処理装置の構成の概略を示す縦断面図である。It is a longitudinal cross-sectional view which shows the outline of a structure of the substrate processing apparatus which concerns on other embodiment. インナーウォールの構成の概略を示す斜視図である。It is a perspective view which shows the outline of a structure of an inner wall. インナーウォールの構成の概略を示す横断面図である。It is a cross-sectional view which shows the outline of a structure of an inner wall.

以下に添付図面を参照しながら、本発明の実施形態について説明する。なお、本明細書及び図面において、実質的に同一の機能構成を有する構成要素については、同一の符号を付することにより重複説明を省略する。図１は、本実施の形態にかかる基板処理装置としてのウェハ処理装置１を概略的に示した縦断面図である。なお、本実施の形態では、ウェハ処理装置１が、例えばウェハＷに対してＣＯＲ処理を行うＣＯＲ処理装置である場合を例にして説明する。   Embodiments of the present invention will be described below with reference to the accompanying drawings. In addition, in this specification and drawing, about the component which has the substantially same function structure, duplication description is abbreviate | omitted by attaching | subjecting the same code | symbol. FIG. 1 is a longitudinal sectional view schematically showing a wafer processing apparatus 1 as a substrate processing apparatus according to the present embodiment. In the present embodiment, the case where the wafer processing apparatus 1 is a COR processing apparatus that performs a COR process on the wafer W will be described as an example.

ウェハ処理装置１は、例えば図１に示すように、気密に構成された処理容器１０と、処理容器１０内でウェハＷを載置する複数、本実施の形態では２台の載置台１１、１２と、載置台１１、１２の上方から処理ガスを載置台１１、１２に向けて供給する処理ガス供給部としてのシャワーヘッド１３と、各載置台１１、１２の外方を囲む昇降自在な隔壁１４と、処理容器１０の底部に固定され、各載置台１１、１２の外方をそれぞれ個別に囲むインナーウォール１５、１５と、隔壁１４を昇降させる昇降機構１６と、を有している。   For example, as shown in FIG. 1, the wafer processing apparatus 1 includes a processing container 10 configured to be airtight, and a plurality of, in this embodiment, two mounting tables 11 and 12 for mounting wafers W in the processing container 10. And a shower head 13 as a processing gas supply unit for supplying a processing gas from above the mounting tables 11 and 12 toward the mounting tables 11 and 12, and a vertically movable partition wall 14 surrounding the mounting tables 11 and 12. And inner walls 15 and 15 that are fixed to the bottom of the processing vessel 10 and individually surround the outer sides of the mounting tables 11 and 12, and an elevating mechanism 16 that raises and lowers the partition wall 14.

処理容器１０は、例えばアルミニウム、ステンレス等の金属により形成された、全体として例えば略直方体状の容器である。処理容器１０は、平面視の形状が例えば略矩形で上面及び下面が開口した筒状の側壁２０と、側壁２０の上面を気密に覆う天井板２１と、側壁２０の下面を覆う底板２２を有している。側壁２０の上端面と天井板２１との間には、処理容器１０内を気密に保つ図示しないシール部材が設けられている。   The processing container 10 is, for example, a substantially rectangular parallelepiped container as a whole formed of a metal such as aluminum or stainless steel. The processing container 10 has a cylindrical side wall 20 having a substantially rectangular shape in plan view and having an upper surface and a lower surface opened, a ceiling plate 21 that airtightly covers the upper surface of the side wall 20, and a bottom plate 22 that covers the lower surface of the side wall 20. doing. Between the upper end surface of the side wall 20 and the ceiling plate 21, a seal member (not shown) that keeps the inside of the processing container 10 airtight is provided.

載置台１１、１２は略円筒形状に形成されており、ウェハＷを載置する載置面を備えた上部台１１ａ、１２ａと、底板２２に固定された、上部台１１ａ、１２ａを支持する下部台１１ｂ、１２ｂをそれぞれ有している。上部台１１ａ、１２ａには、ウェハＷの温度を調整する温度調整機構３０がそれぞれ内蔵されている。温度調整機構３０は、例えば水などの冷媒を循環させることにより載置台１１の温度を調整し、載置台１１上のウェハＷの温度を制御する。なお、載置台１１と載置台１２は上記の通り同一の構成を有しており、以下、特に言及ない場合、載置台１１についての記載は載置台１２についても同様であるので、載置台１２についての記載は省略する。   The mounting tables 11 and 12 are formed in a substantially cylindrical shape. The upper tables 11 a and 12 a having a mounting surface on which the wafer W is mounted, and a lower portion that is fixed to the bottom plate 22 and supports the upper tables 11 a and 12 a. Each has a base 11b, 12b. Temperature adjusting mechanisms 30 for adjusting the temperature of the wafer W are built in the upper bases 11a and 12a, respectively. The temperature adjustment mechanism 30 adjusts the temperature of the mounting table 11 by circulating a coolant such as water, and controls the temperature of the wafer W on the mounting table 11. Note that the mounting table 11 and the mounting table 12 have the same configuration as described above. Hereinafter, the description of the mounting table 11 is the same for the mounting table 12 unless otherwise specified. Is omitted.

また、底板２２における載置台１１の下方の位置には、図示しない支持ピンユニットが設けられており、ウェハ処理装置１の外部に設けられた搬送機構（図示せず）との間でウェハＷを受け渡し可能に構成されている。   Further, a support pin unit (not shown) is provided at a position below the mounting table 11 on the bottom plate 22, and the wafer W is transferred to and from a transfer mechanism (not shown) provided outside the wafer processing apparatus 1. It is configured to be handed over.

シャワーヘッド１３は、処理容器１０の天井板２１の下面に、載置台１１及び載置台１２とそれぞれ対向して個別に設けられている。シャワーヘッド１３は、例えば下面が開口し、天井板２１の下面に支持された略円筒形の枠体３１と、当該枠体３１の内側面に嵌め込まれた略円板状のシャワープレート３２を有している。シャワープレート３２は、枠体３１の天井部と所定の距離を離して設けられている。これにより、枠体３１の天井部とシャワープレート３２の上面との間には空間１３ａが形成されている。また、シャワープレート３２には、当該シャワープレート３２を厚み方向に貫通する開口３２ａが複数設けられている。   The shower head 13 is individually provided on the lower surface of the ceiling plate 21 of the processing container 10 so as to face the mounting table 11 and the mounting table 12. The shower head 13 has, for example, a substantially cylindrical frame 31 that is open on the lower surface and supported by the lower surface of the ceiling plate 21, and a substantially disc-shaped shower plate 32 that is fitted on the inner surface of the frame 31. doing. The shower plate 32 is provided at a predetermined distance from the ceiling of the frame 31. Thereby, a space 13 a is formed between the ceiling of the frame 31 and the upper surface of the shower plate 32. The shower plate 32 is provided with a plurality of openings 32a penetrating the shower plate 32 in the thickness direction.

枠体３１の天井部とシャワープレート３２との間の空間１３ａには、ガス供給管３３を介してガス供給源３４が接続されている。ガス供給源３４は、処理ガスとして例えばフッ化水素（ＨＦ）ガスやアンモニア（ＮＨ３）ガスなどを供給可能に構成されている。そのため、ガス供給源３４から供給された処理ガスは、空間１３ａ、シャワープレート３２を介して、各載置台１１、１２上に載置されたウェハＷに向かって供給される。また、ガス供給管３３には処理ガスの供給量を調節する流量調節機構３５が設けられており、各ウェハＷに供給する処理ガスの量を個別に制御できるように構成されている。なお、シャワーヘッド１３は、例えば複数種類の処理ガスを混合することなく個別に供給可能なポストミックスタイプであってもよい。 A gas supply source 34 is connected to a space 13 a between the ceiling portion of the frame 31 and the shower plate 32 via a gas supply pipe 33. The gas supply source 34 is configured to be able to supply, for example, hydrogen fluoride (HF) gas or ammonia (NH 3 ) gas as a processing gas. Therefore, the processing gas supplied from the gas supply source 34 is supplied toward the wafer W mounted on each mounting table 11, 12 through the space 13 a and the shower plate 32. Further, the gas supply pipe 33 is provided with a flow rate adjusting mechanism 35 for adjusting the supply amount of the processing gas so that the amount of the processing gas supplied to each wafer W can be individually controlled. The shower head 13 may be a post-mix type that can be supplied individually without mixing a plurality of types of processing gases, for example.

隔壁１４は、例えば図２に示すように、２つの載置台１１、１２をそれぞれ個別に囲む２つの円筒部４０、４０と、円筒部４０、４０の上端に設けられたフランジ部４１を有している。円筒部４０の内径は、載置台１１の外側面よりも大きく設定されており、円筒部４０と載置台１１との間に隙間が形成されるようになっている。   For example, as shown in FIG. 2, the partition wall 14 includes two cylindrical portions 40 and 40 that individually surround the two mounting tables 11 and 12, and a flange portion 41 provided at the upper ends of the cylindrical portions 40 and 40. ing. The inner diameter of the cylindrical portion 40 is set to be larger than the outer surface of the mounting table 11, and a gap is formed between the cylindrical portion 40 and the mounting table 11.

フランジ部４１の上面には、図１に示すように、昇降機構１６により隔壁１４を上昇させることにより当該フランジ部４１と枠体３１とが当接した際に、枠体３１との間を気密に塞ぐ、例えばＯリングなどのシール部材４３が、各載置台１１、１２に対応して設けられている。そして、隔壁１４を上昇させて、枠体３１とシール部材４３とを当接させることで、載置台１１、隔壁１４、及びシャワーヘッド１３で囲まれた処理空間Ｓが形成される。   As shown in FIG. 1, when the partition wall 14 is lifted by the elevating mechanism 16, the flange portion 41 is hermetically sealed with the frame body 31 when the flange portion 41 and the frame body 31 come into contact with each other. A sealing member 43 such as an O-ring is provided corresponding to each mounting table 11, 12. And the process space S enclosed by the mounting base 11, the partition 14, and the shower head 13 is formed by raising the partition 14 and making the frame 31 and the sealing member 43 contact | abut.

隔壁１４の高さは、図３に示すように、例えば昇降機構１６により隔壁１４を下降させたときに、フランジ部４１の上面が例えば載置台１１の上面よりも下方に位置するように設定されている。これにより、隔壁１４を下降させることで、処理容器１０の外部からウェハＷに対してアクセス可能となる。なお、隔壁１４のフランジ部４１が枠体３１と当接する（処理空間Ｓが形成される）位置を「ウェハ処理位置」と、隔壁１４を底板２２近傍或いは底板２２に当接するまで下降させた位置を「退避位置」ということがある。なお、図１では、隔壁１４がウェハ処理位置に、図３では、隔壁１４が退避位置にある状態をそれぞれ描図している。   As shown in FIG. 3, the height of the partition wall 14 is set such that, for example, when the partition wall 14 is lowered by the lifting mechanism 16, the upper surface of the flange portion 41 is positioned below the upper surface of the mounting table 11, for example. ing. Accordingly, the wafer W can be accessed from the outside of the processing container 10 by lowering the partition wall 14. The position at which the flange portion 41 of the partition wall 14 abuts on the frame body 31 (where the processing space S is formed) is the “wafer processing position”, and the position at which the partition wall 14 is lowered to the vicinity of the bottom plate 22 or the bottom plate 22. Is sometimes referred to as a “retraction position”. In FIG. 1, the partition 14 is illustrated at the wafer processing position, and FIG. 3 illustrates the state where the partition 14 is at the retracted position.

インナーウォール１５は、略円筒形状の本体部１５ａと、本体部１５ａの上端部に設けられた、当該インナーウォール１５の外周方向に向けて水平に突出する突出部材１５ｂを有している。インナーウォール１５は、例えば図１に示すように、載置台１１、１２の下部台１１ｂ、１２ｂをそれぞれ個別に囲むように配置されている。インナーウォール１５の本体部１５ａの内径は、下部台１１ｂ、１２ｂの外径よりも大きく設定されており、インナーウォール１５と下部台１１ｂ、１２ｂとの間にそれぞれ排気空間Ｖが形成される。そして、インナーウォール１５の高さは、例えば図１に示すように、昇降機構１６により隔壁１４をウェハ処理位置まで上昇させたときに、隔壁１４の円筒部４０の内側面と、インナーウォール１５の突出部材１５ｂとが当接するように設定されている。これにより、インナーウォール１５と隔壁１４とが気密に接触する。   The inner wall 15 has a substantially cylindrical main body portion 15a and a protruding member 15b provided at the upper end portion of the main body portion 15a and projecting horizontally toward the outer peripheral direction of the inner wall 15. For example, as illustrated in FIG. 1, the inner wall 15 is disposed so as to individually surround the lower bases 11 b and 12 b of the mounting bases 11 and 12. An inner diameter of the main body 15a of the inner wall 15 is set larger than an outer diameter of the lower bases 11b and 12b, and an exhaust space V is formed between the inner wall 15 and the lower bases 11b and 12b. For example, as shown in FIG. 1, the height of the inner wall 15 is such that when the partition 14 is raised to the wafer processing position by the lifting mechanism 16, the inner surface of the cylindrical portion 40 of the partition 14 and the inner wall 15 It is set so that the protruding member 15b comes into contact. Thereby, the inner wall 15 and the partition 14 are in airtight contact.

また、各インナーウォール１５の下方には、複数のスリット１５ｃが形成されている。このスリット１５ｃの構成の詳細については後述する。   A plurality of slits 15 c are formed below each inner wall 15. Details of the configuration of the slit 15c will be described later.

隔壁１４を昇降させる昇降機構１６は、処理容器１０の外部に配置されたアクチュエータ５０と、アクチュエータ５０に接続され、処理容器１０の底板２２を貫通して処理容器１０内を鉛直上方に延伸する駆動軸５１と、先端が隔壁１４に接続され、他方の端部が処理容器１０の外部まで延伸する複数のガイド軸５２を有している。ガイド軸５２は、駆動軸５１により隔壁１４を昇降させる際に隔壁１４が傾いたりすることを防止するものである。   The raising / lowering mechanism 16 that raises and lowers the partition wall 14 is connected to the actuator 50 disposed outside the processing container 10 and the actuator 50, and is driven to extend vertically upward in the processing container 10 through the bottom plate 22 of the processing container 10. The shaft 51 has a plurality of guide shafts 52 that are connected to the partition wall 14 at the tip and extend to the outside of the processing vessel 10 at the other end. The guide shaft 52 prevents the partition wall 14 from being tilted when the partition wall 14 is moved up and down by the drive shaft 51.

駆動軸５１には、伸縮可能なベローズ６０の下端部が気密に接続されている。ベローズ６０の上端部は、底板２２の下面と気密に接続されている。そのため、駆動軸５１が昇降した際に、ベローズ６０が鉛直方向に沿って伸縮することで、処理容器１０内が気密に維持されるようになっている。なお、駆動軸５１とベローズ６０との間には、昇降動作の際のガイドとして機能する、例えば底板２２に固定されたスリーブ（図示せず）が設けられている。   The drive shaft 51 is airtightly connected to a lower end portion of an extendable bellows 60. The upper end portion of the bellows 60 is airtightly connected to the lower surface of the bottom plate 22. Therefore, when the drive shaft 51 moves up and down, the bellows 60 expands and contracts along the vertical direction, so that the inside of the processing container 10 is maintained airtight. In addition, between the drive shaft 51 and the bellows 60, for example, a sleeve (not shown) fixed to the bottom plate 22 is provided that functions as a guide during the lifting operation.

ガイド軸５２には、駆動軸５１と同様に伸縮可能なベローズ６１が接続されている。また、ベローズ６１の上端部は、底板２２と側壁２０を跨いで、双方に気密に接続されている。そのため、駆動軸５１による隔壁１４の昇降動作に伴いガイド軸５２が昇降した際に、ベローズ６１が鉛直方向に沿って伸縮することで、処理容器１０内が気密に維持されるようになっている。なお、ガイド軸５２とベローズ６１との間にも、駆動軸５１の場合と同様に、昇降動作の際のガイドとして機能するスリーブ（図示せず）が設けられている。   A bellows 61 that can be expanded and contracted is connected to the guide shaft 52 in the same manner as the drive shaft 51. Moreover, the upper end part of the bellows 61 straddles the baseplate 22 and the side wall 20, and is airtightly connected to both. Therefore, when the guide shaft 52 moves up and down with the lifting and lowering operation of the partition wall 14 by the drive shaft 51, the bellows 61 expands and contracts along the vertical direction, so that the inside of the processing container 10 is maintained airtight. . Note that a sleeve (not shown) that functions as a guide during the lifting operation is also provided between the guide shaft 52 and the bellows 61 as in the case of the drive shaft 51.

また、ベローズ６１の上端部は固定側の端部であり、ガイド軸５２と接続されたベローズ６１の下端部は自由側の端部となっているため、処理容器１０内が負圧になると、ベローズ６１の内外の圧力差によりベローズ６１を鉛直方向に圧縮する力が作用する。そのため、ベローズ６１の自由側の端部に接続されたガイド軸５２は、ベローズ６１が縮むことにより鉛直上方に上昇する。これにより、隔壁１４を均等に上昇させて、シール部材４３と枠体３１を適切に接触させることで、隔壁１４と枠体３１との間のシール性を確保することができる。なお、ガイド軸５２には、弾性部材としてのベローズ６１からの反力や、ガイド軸５２そのものの自重などにより当該ガイド軸５２を下方に押し下げる力が作用するが、ベローズ６１の径を適宜設定することによりガイド軸５２に作用する差圧が調整される。   In addition, the upper end of the bellows 61 is an end on the fixed side, and the lower end of the bellows 61 connected to the guide shaft 52 is an end on the free side. A force that compresses the bellows 61 in the vertical direction is applied by the pressure difference between the inside and outside of the bellows 61. Therefore, the guide shaft 52 connected to the end portion on the free side of the bellows 61 rises vertically upward as the bellows 61 contracts. Thereby, the sealing performance between the partition 14 and the frame 31 is securable by raising the partition 14 equally and making the sealing member 43 and the frame 31 contact appropriately. The guide shaft 52 is subjected to a reaction force from the bellows 61 as an elastic member, or a force that pushes down the guide shaft 52 due to its own weight, but the diameter of the bellows 61 is appropriately set. Thus, the differential pressure acting on the guide shaft 52 is adjusted.

処理容器１０の底板２２であってインナーウォール１５の外方には、処理容器１０内を排気する排気機構１００が、排気管１０１を介して接続されている。排気管１０１には、排気機構１００による排気量を調節する調節弁１０２が設けられている。また、底板２２には、載置台１１及び載置台１２のそれぞれの処理空間Ｓの圧力を計測するための、圧力測定機構（図示せず）が設けられている。調節弁１０２の開度は、例えばこの圧力測定機構による測定値に基づいて制御される。   An exhaust mechanism 100 that exhausts the inside of the processing container 10 is connected to the bottom plate 22 of the processing container 10 outside the inner wall 15 via an exhaust pipe 101. The exhaust pipe 101 is provided with a control valve 102 that adjusts the exhaust amount by the exhaust mechanism 100. Further, the bottom plate 22 is provided with a pressure measuring mechanism (not shown) for measuring the pressures in the processing spaces S of the mounting table 11 and the mounting table 12. The opening degree of the control valve 102 is controlled based on, for example, a measurement value obtained by the pressure measurement mechanism.

ウェハ処理装置１には、図１に示すように制御装置２００が設けられている。制御装置２００は、例えばコンピュータであり、プログラム格納部（図示せず）を有している。プログラム格納部には、ウェハ処理装置１におけるウェハＷの処理を制御するプログラムが格納されている。なお、前記プログラムは、例えばコンピュータ読み取り可能なハードディスク（ＨＤ）、フレキシブルディスク（ＦＤ）、コンパクトディスク（ＣＤ）、マグネットオプティカルデスク（ＭＯ）、メモリーカードなどのコンピュータに読み取り可能な記憶媒体に記録されていたものであって、その記憶媒体から制御装置２００にインストールされたものであってもよい。   The wafer processing apparatus 1 is provided with a control device 200 as shown in FIG. The control device 200 is, for example, a computer and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of the wafer W in the wafer processing apparatus 1. The program is recorded on a computer-readable storage medium such as a computer-readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), or a memory card. Or installed in the control device 200 from the storage medium.

次にインナーウォール１５のスリット１５ｃ近傍の構成について図４及び図５を用いて説明する。図４はインナーウォール１５の構成の概略について示す、下方から見た斜視図であり、図５は、インナーウォール１５の横断面図である。   Next, the configuration of the inner wall 15 near the slit 15c will be described with reference to FIGS. FIG. 4 is a perspective view showing the outline of the configuration of the inner wall 15 as viewed from below, and FIG. 5 is a cross-sectional view of the inner wall 15.

図４、図５に示すように、各スリット１５ｃは、インナーウォール１５の周方向に沿って等間隔で配置されており、各スリット１５ｃ近傍には、例えば略円弧状の仕切板１１０が、本体部１５ａの内側に設けられている。なお、図４、図５では、周方向に沿ってスリット１５ｃと仕切板１１０がそれぞれ３箇所に設けられた状態を描図している。   As shown in FIGS. 4 and 5, the slits 15c are arranged at equal intervals along the circumferential direction of the inner wall 15, and for example, a substantially arc-shaped partition plate 110 is disposed in the vicinity of the slits 15c. It is provided inside the portion 15a. 4 and 5 illustrate a state in which the slits 15c and the partition plates 110 are provided at three locations along the circumferential direction, respectively.

仕切板１１０と本体部１５ａとの間には、所定の幅Ｌの隙間Ｇが形成されるように、仕切板１１０は本体部１５ａと概ね同心円上に配置されている。隙間Ｇの幅Ｌは、仕切板１１０の長さ方向にわたって概ね均一になっており、本実施の形態では、隙間Ｇの幅Ｌは、概ね１３．５ｍｍに設定されている。また、スリット１５ｃの高さは概ね６０ｍｍに設定されている。   The partition plate 110 is disposed substantially concentrically with the main body portion 15a so that a gap G having a predetermined width L is formed between the partition plate 110 and the main body portion 15a. The width L of the gap G is substantially uniform over the length direction of the partition plate 110, and in the present embodiment, the width L of the gap G is set to about 13.5 mm. The height of the slit 15c is set to approximately 60 mm.

また、仕切板１１０は、例えばインナーウォール１５の中心位置から水平にスリット１５ｃの方向を見たときに、仕切板１１０によりスリット１５ｃが覆われて視認できないように配置されている。そのため、シャワーヘッド１３から供給され、処理空間Ｓを介してインナーウォール１５内の排気空間Ｖに進入した処理ガスは、最短距離で直接スリット１５ｃに流れ込むのではなく、例えば図５に破線の矢印で示すように、仕切板１１０と本体部１５ａとの間の隙間Ｇを通ってスリット１５ｃから排気される。即ち、仕切板１１０により、排気空間Ｖの処理ガスは、隙間Ｇを迂回してスリット１５ｃから排気される。なお、本実施の形態では、図５に示す、仕切板１１０の周方向の長さＭは、概ね１６４ｍｍに設定されている。したがって、排気空間Ｖに進入した処理ガスは、仕切板１１０により概ね１６４ｍｍだけ隙間Ｇを迂回してスリット１５ｃから排気される。   Further, the partition plate 110 is arranged so that the slit 15c is covered with the partition plate 110 when the direction of the slit 15c is viewed horizontally from the center position of the inner wall 15, for example. Therefore, the processing gas supplied from the shower head 13 and entering the exhaust space V in the inner wall 15 through the processing space S does not flow directly into the slit 15c at the shortest distance. For example, a broken line arrow in FIG. As shown, the air is exhausted from the slit 15c through the gap G between the partition plate 110 and the main body 15a. In other words, the processing gas in the exhaust space V is exhausted from the slit 15 c by bypassing the gap G by the partition plate 110. In the present embodiment, the circumferential length M of the partition plate 110 shown in FIG. 5 is set to approximately 164 mm. Accordingly, the processing gas that has entered the exhaust space V is exhausted from the slit 15c by bypassing the gap G by approximately 164 mm by the partition plate 110.

ここで、スリット１５ｃを設ける目的について説明する。例えば本実施の形態のウェハ処理装置１のように、複数の処理空間Ｓに対して共通で排気機構１００が設けられている場合、各処理空間Ｓ間で処理ガスが干渉しないようにするためには、スリット１５ｃを極力小さくして、処理空間Ｓの外部から処理空間Ｓ内に処理ガスが流れ込まないようにすることが好ましい。そこで、本発明者らは、スリット１５ｃを有するインナーウォール１５において最適なスリット１５ｃの寸法を設定するために、一方の処理空間Ｓと他方の処理空間Ｓにそれぞれ異なる処理ガスを供給すると共に、スリット１５ｃの寸法を変化させて、処理空間Ｓ圧力と各処理空間における処理ガスの濃度がどのように変化するかを確認する試験を行った。なお、試験におけるインナーウォール１５には仕切板１１０は設けられていない。   Here, the purpose of providing the slit 15c will be described. For example, when the exhaust mechanism 100 is provided in common for a plurality of processing spaces S as in the wafer processing apparatus 1 of the present embodiment, in order to prevent the processing gas from interfering between the processing spaces S. Preferably, the slit 15c is made as small as possible so that the processing gas does not flow into the processing space S from the outside of the processing space S. Therefore, the present inventors supply different processing gases to one processing space S and the other processing space S in order to set the optimal dimension of the slit 15c in the inner wall 15 having the slit 15c, A test was performed to check how the processing space S pressure and the concentration of the processing gas in each processing space change by changing the size of 15c. Note that the inner wall 15 in the test is not provided with the partition plate 110.

試験の結果、スリット１５ｃの開口面積を小さくするほど処理ガスの濃度は高くなる、即ち、他方の処理空間Ｓからの処理ガスの回り込みは少なくなるものの、処理空間Ｓの圧力が上昇し、処理ガスの回り込みを所望の値に抑えると、処理空間Ｓの圧力がウェハ処理の要求値を満足できなくなることがわかった。即ち、スリット１５ｃの開口面積を小さくすると、スリット１５ｃの圧力損失が上昇するだけで、処理ガスの回り込みと処理空間Ｓの圧力とはトレードオフの関係にある。   As a result of the test, as the opening area of the slit 15c is reduced, the concentration of the processing gas increases, that is, the flow of the processing gas from the other processing space S decreases, but the pressure in the processing space S increases and the processing gas increases. It has been found that when the wraparound is suppressed to a desired value, the pressure in the processing space S cannot satisfy the required value for wafer processing. That is, when the opening area of the slit 15c is reduced, only the pressure loss of the slit 15c increases, and the flow of the processing gas and the pressure of the processing space S are in a trade-off relationship.

そこで本発明者らは、スリット１５ｃによる圧力損失を抑えつつ、処理ガスの回り込みを低減する方法について鋭意検討し、インナーウォール１５内の排気経路の長さを長くすることで、圧力損失の増加を最小限に抑えつつ、処理ガスの回り込みを低減できるとの知見を得た。本発明はこの知見に基づくものである。そのため本実施の形態では、インナーウォール１５の内側面に仕切板１１０を設けることで、本体部１５ａと仕切板１１０との間に隙間Ｇを形成し、排気空間Ｖ内の処理ガスを、この隙間Ｇを介してスリット１５ｃから排気することで、隙間Ｇの周方向に沿った長さ分だけ排気経路を長くしている。   Therefore, the present inventors have intensively studied a method for reducing the flow of the processing gas while suppressing the pressure loss due to the slit 15c, and increasing the length of the exhaust path in the inner wall 15 to increase the pressure loss. We obtained knowledge that process gas wraparound can be reduced while minimizing. The present invention is based on this finding. Therefore, in the present embodiment, by providing the partition plate 110 on the inner side surface of the inner wall 15, a gap G is formed between the main body portion 15a and the partition plate 110, and the processing gas in the exhaust space V is passed through this gap. By exhausting from the slit 15c via G, the exhaust path is lengthened by the length along the circumferential direction of the gap G.

本実施の形態にかかるウェハ処理装置１は以上のように構成されており、次に、ウェハ処理装置１におけるウェハＷ処理について説明する。   The wafer processing apparatus 1 according to the present embodiment is configured as described above. Next, the wafer W process in the wafer processing apparatus 1 will be described.

ウェハ処理にあたっては、図３に示すように、先ず隔壁１４が退避位置まで降下した状態で、ウェハ処理装置１の外部に設けられた搬送機構（図示せず）により処理容器１０内にウェハＷが搬送され、各載置台１１、１２上に載置される。   In the wafer processing, as shown in FIG. 3, the wafer W is first placed in the processing container 10 by a transfer mechanism (not shown) provided outside the wafer processing apparatus 1 with the partition wall 14 lowered to the retracted position. It is transported and placed on each mounting table 11, 12.

その後、図１に示すように、隔壁１４をウェハ処理位置まで上昇させる。これにより、隔壁１４により処理空間Ｓが形成される。   Thereafter, as shown in FIG. 1, the partition wall 14 is raised to the wafer processing position. Thereby, the processing space S is formed by the partition wall 14.

そして、所定の時間に、排気機構１００により処理容器１０の内部を所定の圧力まで排気すると共に、ガス供給源３４からそれぞれ処理ガスが処理容器１０内に供給され、ウェハＷに対して所定の処理、本実施の形態では、例えばＣＯＲ処理が行われる。   Then, at a predetermined time, the exhaust mechanism 100 evacuates the inside of the processing container 10 to a predetermined pressure, and a processing gas is supplied from the gas supply source 34 into the processing container 10 to perform a predetermined processing on the wafer W. In this embodiment, for example, a COR process is performed.

ＣＯＲ処理においては、ガス供給源３４から供給された処理ガスはシャワープレート３２を介してウェハＷに供給される。この際、載置台１１、１２を囲むように隔壁１４が設けられているので、シャワープレート３２から供給された処理ガスは、ウェハ面内に均一に供給される。   In the COR processing, the processing gas supplied from the gas supply source 34 is supplied to the wafer W through the shower plate 32. At this time, since the partition wall 14 is provided so as to surround the mounting tables 11 and 12, the processing gas supplied from the shower plate 32 is supplied uniformly within the wafer surface.

処理空間Ｓ内の処理ガスは、排気空間Ｖ、各インナーウォール１５のスリット１５ｃを通り、排気機構１００から排出される。この際、処理ガスは、排気空間Ｖにおいて仕切板１１０とインナーウォール１５との間の隙間Ｇを迂回して排気されるので、処理空間Ｓ内の圧力は所望の真空度まで減圧した状態を維持しつつ、各インナーウォール１５からのスリット１５ｃを介した処理ガスの周り込みが最小限に抑えられるので、各処理空間Ｓ内で処理ガスが干渉することがない。   The processing gas in the processing space S passes through the exhaust space V and the slits 15 c of the inner walls 15 and is discharged from the exhaust mechanism 100. At this time, since the processing gas is exhausted by bypassing the gap G between the partition plate 110 and the inner wall 15 in the exhaust space V, the pressure in the processing space S is maintained to be reduced to a desired degree of vacuum. However, since the process gas wraps around each inner wall 15 through the slit 15c is minimized, the process gas does not interfere in each process space S.

ＣＯＲ処理が行われると、隔壁１４が退避位置に降下し、ウェハ搬送機構（図示せず）より各載置台１１、１２上のウェハＷがウェハ処理装置１の外部に搬出される。その後、ウェハ処理装置１外部に設けられた加熱装置によりウェハＷが加熱され、ＣＯＲ処理によって生じた反応生成物が気化して除去される。これにより、一連のウェハ処理が終了する。   When the COR process is performed, the partition wall 14 is lowered to the retracted position, and the wafers W on the mounting tables 11 and 12 are carried out of the wafer processing apparatus 1 from a wafer transfer mechanism (not shown). Thereafter, the wafer W is heated by a heating device provided outside the wafer processing apparatus 1, and the reaction product generated by the COR process is vaporized and removed. Thereby, a series of wafer processing is completed.

以上の実施の形態によれば、複数の載置台１１、１２を個別に囲む隔壁１４とインナーウォール１５を有しているので、各載置台１１、１２に個別に処理空間
Ｓを形成できる。そして、インナーウォール１５に形成されたスリット１５ｃから処理空間Ｓ内の処理ガスを排気するので、各ウェハＷ毎にガス流れの均一性を確保し、面内均一なウェハ処理を行うことができる。 According to the above embodiment, since the partition wall 14 and the inner wall 15 that individually surround the plurality of mounting tables 11 and 12 are provided, the processing space S can be individually formed on each mounting table 11 and 12. Then, since the processing gas in the processing space S is exhausted from the slit 15c formed in the inner wall 15, the uniformity of the gas flow can be ensured for each wafer W, and the in-plane uniform wafer processing can be performed.

また、インナーウォール１５には、処理空間Ｓ内の処理ガスがスリット１５ｃに直接流れ込まないように迂回させる仕切板１１０が設けられているので、仕切板１１０を設けていない場合と比較して、インナーウォール１５内での処理ガスの排気経路が長くなる。そうすると、インナーウォール１５内に外部から処理ガスが進入しにくくなるとともに、排気経路における圧力損失の上昇は最小限に抑えることができる。その結果、各処理空間Ｓ内で処理ガスが相互に干渉することを防止し、各ウェハＷ毎に面内均一なウェハ処理を独立して行うことができる。   In addition, since the inner wall 15 is provided with a partition plate 110 that bypasses the processing gas in the processing space S so as not to directly flow into the slit 15c, the inner wall 15 has an inner wall as compared with the case where the partition plate 110 is not provided. The exhaust path of the processing gas in the wall 15 becomes long. As a result, it becomes difficult for the processing gas to enter the inner wall 15 from the outside, and an increase in pressure loss in the exhaust path can be minimized. As a result, it is possible to prevent the processing gases from interfering with each other in each processing space S, and to perform uniform wafer processing on each wafer W independently.

なお、以上の実施の形態では、仕切板１１０をインナーウォール１５の本体部１５ａに沿った円弧状に形成していたが、仕切板１１０の形状は本実施の形態の内容に限定されるものではなく、排気空間Ｖにおける排気経路を長くできるものであれば、任意に設定できる。即ち、仕切板１１０は円弧状である必要はなく、例えば直線上であってもよい。   In the above embodiment, the partition plate 110 is formed in an arc shape along the main body portion 15a of the inner wall 15, but the shape of the partition plate 110 is not limited to the contents of the present embodiment. If the exhaust path in the exhaust space V can be lengthened, it can be arbitrarily set. That is, the partition plate 110 does not have to be arc-shaped, and may be, for example, a straight line.

以上の実施の形態では、インナーウォール１５は載置台１１の載置面より下方に設置されていたが、隔壁１４及びインナーウォール１５の鉛直方向の長さについては任意に設定が可能である。即ち、隔壁１４をウェハ処理位置及び退避位置に移動させたときに、適宜処理空間Ｓを形成すると共に、ウェハＷにアクセス可能となるように構成されていれば、例えばインナーウォール１５の上端が載置台１１の載置面より上方に位置していてもよい。但し、処理空間Ｓ内の気流の均一性を維持するという観点からは、載置台１１の載置面よりも上方に気流に影響する構造物は極力設けないことが好ましい。そのため、スリット１５ｃ及び仕切板１１０は、載置台１１の載置面よりも下方に配置することが好ましい。   In the above embodiment, the inner wall 15 is installed below the mounting surface of the mounting table 11, but the vertical lengths of the partition wall 14 and the inner wall 15 can be arbitrarily set. In other words, when the partition wall 14 is moved to the wafer processing position and the retracted position, if the processing space S is appropriately formed and the wafer W is accessible, for example, the upper end of the inner wall 15 is mounted. You may be located above the mounting surface of the mounting base 11. However, from the viewpoint of maintaining the uniformity of the airflow in the processing space S, it is preferable that structures that affect the airflow are not provided as much as possible above the mounting surface of the mounting table 11. Therefore, it is preferable that the slit 15 c and the partition plate 110 are disposed below the mounting surface of the mounting table 11.

なお、以上の実施の形態では、複数の載置台として２台の載置台１１、１２を設けたが載置台の設置数は本実施の形態の内容に限定されるものではない。また、複数の載置台とは、載置面を複数有することを意味しており、例えば１台の載置台上に、複数枚のウェハＷが載置できるように構成されている場合も、複数の載置台の範囲に属するものと了解される。   In the above embodiment, two mounting tables 11 and 12 are provided as a plurality of mounting tables. However, the number of mounting tables is not limited to the contents of the present embodiment. The plurality of mounting tables means that there are a plurality of mounting surfaces. For example, a plurality of mounting tables may be configured so that a plurality of wafers W can be mounted on one mounting table. It is understood that it belongs to the range of the mounting table.

また、以上の実施の形態では、複数の載置台１１、１２に対して１つの隔壁１４を設けたが、隔壁１４の構成についても本実施の形態の内容に限定されるものではなく、各載置台１１、１２に対して独立した処理空間Ｓを形成できるものであれば、その形状は任意に設定できる。例えば円筒部４０を１つのみ有する隔壁を各載置台１１、１２に対して、それぞれ別個に設けるようにしてもよい。   Further, in the above embodiment, one partition 14 is provided for the plurality of mounting tables 11 and 12, but the configuration of the partition 14 is not limited to the contents of the present embodiment, and each mounting is not limited. The shape can be arbitrarily set as long as an independent processing space S can be formed with respect to the mounts 11 and 12. For example, a partition wall having only one cylindrical portion 40 may be provided separately for each mounting table 11, 12.

以上の実施の形態では、隔壁１４と枠体３１とが当接することで処理空間Ｓを形成したが、処理空間Ｓを形成するにあたり、隔壁１４を当接させる部材は枠体３１に限定されるものではなく、例えば天井板２１と当接させることで、処理空間Ｓを形成するようにしてもよい。   In the above embodiment, the processing space S is formed by the abutment between the partition wall 14 and the frame body 31. However, in forming the processing space S, the member that abuts the partition wall 14 is limited to the frame body 31. For example, the processing space S may be formed by contacting the ceiling plate 21.

以上、添付図面を参照しながら本発明の好適な実施形態について詳細に説明したが、本発明はかかる例に限定されない。本発明の属する技術の分野における通常の知識を有する者であれば、特許請求の範囲に記載された技術的思想の範疇において、各種の変更例または修正例に想到し得ることは明らかであり、これらについても、当然に本発明の技術的範囲に属するものと了解される。上述の実施の形態は、ウェハにＣＯＲ処理を行う場合を例にして説明したが、本発明は処理ガスを用いる他のウェハ処理装置、例えばプラズマ処理装置などにも適用できる。   The preferred embodiments of the present invention have been described in detail above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious that a person having ordinary knowledge in the technical field to which the present invention pertains can make various changes or modifications within the scope of the technical idea described in the claims. Of course, it is understood that these also belong to the technical scope of the present invention. In the above-described embodiment, the case where the COR process is performed on the wafer has been described as an example. However, the present invention can also be applied to other wafer processing apparatuses using a processing gas, such as a plasma processing apparatus.

１ ウェハ処理装置
１０ 処理容器
１１、１２ 載置台
１３ シャワーヘッド
１４ 隔壁
１５ インナーウォール
２０ 側壁
２１ 天井板
２２ 底板
３２ シャワープレート
１１０ 仕切板
Ｗ ウェハ
Ｇ 隙間
Ｓ 処理空間
Ｖ 排気空間 DESCRIPTION OF SYMBOLS 1 Wafer processing apparatus 10 Processing container 11, 12 Mounting stand 13 Shower head 14 Partition 15 Inner wall 20 Side wall 21 Ceiling plate 22 Bottom plate 32 Shower plate 110 Partition plate W Wafer G Gap S Processing space V Exhaust space

Claims (2)

基板を処理する基板処理装置であって、
基板を気密に収容する処理容器と、
前記処理容器内で基板を載置する複数の載置台と、
前記載置台の上方から前記載置台に向けて処理ガスを供給する処理ガス供給部と、
前記処理容器内を排気する排気機構と、
前記処理容器内に配置され、前記各載置台の外周と間隔をあけて当該載置台を囲う隔壁と、
前記処理容器の底面に配置され、前記載置台の外周と間隔をあけて当該載置台を囲う円筒形状のインナーウォールと、を有し、
前記隔壁と前記インナーウォールにより基板の処理空間が形成され、
前記インナーウォールには、スリットが形成され、
前記処理空間内の処理ガスの排気は、前記スリットを介して行われ、
前記インナーウォールは、前記載置台の基板載置面よりも下方に配置され、
前記スリットは、前記インナーウォールの側面であって前記載置台の載置面よりも下方に設けられ、且つ、前記処理容器の底面まで設けられていることを特徴とする、基板処理装置。 A substrate processing apparatus for processing a substrate,
A processing container for hermetically containing the substrate;
A plurality of mounting tables for mounting a substrate in the processing container;
A processing gas supply unit for supplying a processing gas from above the mounting table toward the mounting table;
An exhaust mechanism for exhausting the inside of the processing container;
A partition wall disposed in the processing container and surrounding the mounting table at an interval from the outer periphery of the mounting table;
A cylindrical inner wall that is disposed on the bottom surface of the processing container and surrounds the mounting table with an interval from the outer periphery of the mounting table;
A substrate processing space is formed by the partition wall and the inner wall,
A slit is formed in the inner wall,
The exhaust of the processing gas in the processing space is performed through the slit,
The inner wall is disposed below the substrate mounting surface of the mounting table,
The substrate processing apparatus according to claim 1, wherein the slit is provided on a side surface of the inner wall and below the mounting surface of the mounting table, and is provided up to a bottom surface of the processing container. 前記インナーウォールは、前記処理空間内の処理ガスが前記スリットに直接流れ込まないように迂回させる仕切板を備え、
前記仕切板は、前記インナーウォールの中心から前記スリットを視認できなくなる位置に配置されていることを特徴とする、請求項１に記載の基板処理装置。 The inner wall includes a partition plate that bypasses the processing gas in the processing space so as not to flow directly into the slit,
The substrate processing apparatus according to claim 1, wherein the partition plate is disposed at a position where the slit cannot be visually recognized from the center of the inner wall.
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