JP2024037598A - Substrate holder and substrate processing equipment - Google Patents

Substrate holder and substrate processing equipment Download PDF

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JP2024037598A
JP2024037598A JP2022142537A JP2022142537A JP2024037598A JP 2024037598 A JP2024037598 A JP 2024037598A JP 2022142537 A JP2022142537 A JP 2022142537A JP 2022142537 A JP2022142537 A JP 2022142537A JP 2024037598 A JP2024037598 A JP 2024037598A
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inclined surface
substrate
substrate holder
vertical direction
horizontal length
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良孝 森
千明 竹内
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2022142537A priority Critical patent/JP2024037598A/en
Priority to KR1020230110974A priority patent/KR20240034649A/en
Priority to CN202311089807.2A priority patent/CN117672927A/en
Publication of JP2024037598A publication Critical patent/JP2024037598A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67309Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735Closed carriers
    • H01L21/67383Closed carriers characterised by substrate supports
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

【課題】パーティクルの発生を抑制できる技術を提供する。【解決手段】本開示の一態様による基板保持具は、複数の基板を鉛直方向に間隔を有して多段に積載可能な基板保持具であって、同一円周上に設けられ、鉛直方向に沿って延びる複数の支柱と、前記複数の支柱の各々に鉛直方向に間隔を有して設けられ、各々が水平方向に延びる複数の支持部と、を有し、前記複数の支持部の各々は、前記基板が載置される載置面と、前記載置面の外縁の少なくとも一部に設けられる傾斜面と、を有し、前記傾斜面は、前記載置面から離れるにつれて下方に傾斜する第1傾斜面と、前記載置面と前記第1傾斜面との間に位置し、前記載置面から前記第1傾斜面に向けて下方に傾斜する第2傾斜面と、を有し、前記第2傾斜面の高さを前記第2傾斜面の水平長さで除した第2値は、前記第1傾斜面の高さを前記第1傾斜面の水平長さで除した第1値よりも小さい。【選択図】図1The present invention provides a technology that can suppress the generation of particles. A substrate holder according to an aspect of the present disclosure is a substrate holder capable of stacking a plurality of substrates in multiple stages at intervals in the vertical direction, and is provided on the same circumference and a plurality of support sections extending horizontally, each of the plurality of support sections being provided at intervals in the vertical direction on each of the plurality of support sections; , a mounting surface on which the substrate is mounted, and an inclined surface provided on at least a part of the outer edge of the mounting surface, the inclined surface being inclined downward as it moves away from the mounting surface. a first inclined surface, and a second inclined surface located between the placement surface and the first inclined surface and inclined downward from the placement surface toward the first inclined surface, The second value obtained by dividing the height of the second inclined surface by the horizontal length of the second inclined surface is the first value obtained by dividing the height of the first inclined surface by the horizontal length of the first inclined surface. smaller than [Selection diagram] Figure 1

Description

本開示は、基板保持具及び基板処理装置に関する。 The present disclosure relates to a substrate holder and a substrate processing apparatus.

縦型熱処理装置に用いられる熱処理用ボートにおいて、ウエハと接触する溝部のエッジ部分を丸く成形する技術が知られている(例えば、特許文献1参照)。 2. Description of the Related Art In a heat treatment boat used in a vertical heat treatment apparatus, a technique is known in which the edge portions of grooves that come into contact with wafers are rounded (see, for example, Patent Document 1).

特開平7-161654号公報Japanese Unexamined Patent Publication No. 7-161654

本開示は、パーティクルの発生を抑制できる技術を提供する。 The present disclosure provides a technique that can suppress the generation of particles.

本開示の一態様による基板保持具は、複数の基板を鉛直方向に間隔を有して多段に積載可能な基板保持具であって、同一円周上に設けられ、鉛直方向に沿って延びる複数の支柱と、前記複数の支柱の各々に鉛直方向に間隔を有して設けられ、各々が水平方向に延びる複数の支持部と、を有し、前記複数の支持部の各々は、前記基板が載置される載置面と、前記載置面の外縁の少なくとも一部に設けられる傾斜面と、を有し、前記傾斜面は、前記載置面から離れるにつれて下方に傾斜する第1傾斜面と、前記載置面と前記第1傾斜面との間に位置し、前記載置面から前記第1傾斜面に向けて下方に傾斜する第2傾斜面と、を有し、前記第2傾斜面の高さを前記第2傾斜面の水平長さで除した第2値は、前記第1傾斜面の高さを前記第1傾斜面の水平長さで除した第1値よりも小さい。 A substrate holder according to one aspect of the present disclosure is a substrate holder capable of stacking a plurality of substrates in multiple stages with intervals in the vertical direction, and the plurality of substrates are provided on the same circumference and extend along the vertical direction. and a plurality of support parts provided at intervals in the vertical direction on each of the plurality of support pillars and each extending in the horizontal direction, and each of the plurality of support parts is arranged so that the substrate is A first inclined surface that has a mounting surface on which the mounting surface is placed, and an inclined surface provided on at least a portion of the outer edge of the mounting surface, and the inclined surface slopes downward as it moves away from the mounting surface. and a second sloped surface located between the placement surface and the first sloped surface and inclined downward from the placement surface toward the first sloped surface, and the second sloped surface A second value obtained by dividing the height of the surface by the horizontal length of the second inclined surface is smaller than a first value obtained by dividing the height of the first inclined surface by the horizontal length of the first inclined surface.

本開示によれば、パーティクルの発生を抑制できる。 According to the present disclosure, generation of particles can be suppressed.

図1は、実施形態に係る基板処理装置を示す概略図である。FIG. 1 is a schematic diagram showing a substrate processing apparatus according to an embodiment. 図2は、図1のII-II矢視断面図である。FIG. 2 is a sectional view taken along the line II--II in FIG. 図3は、図2のIII-III矢視断面図である。FIG. 3 is a sectional view taken along the line III--III in FIG. 2. 図4は、図3の一部を拡大して示す図である。FIG. 4 is an enlarged view of a part of FIG. 3. 図5は、図3のV-V矢視断面図である。FIG. 5 is a sectional view taken along the line VV in FIG. 3. 図6は、パーティクルの個数を測定した結果を示す図である。FIG. 6 is a diagram showing the results of measuring the number of particles.

以下、添付の図面を参照しながら、本開示の限定的でない例示の実施形態について説明する。添付の全図面中、同一又は対応する部材又は部品については、同一又は対応する参照符号を付し、重複する説明を省略する。 Non-limiting exemplary embodiments of the present disclosure will now be described with reference to the accompanying drawings. In all the attached drawings, the same or corresponding members or parts are denoted by the same or corresponding reference numerals, and redundant explanation will be omitted.

(パーティクル)
複数の基板Wに対して一度に各種の処理を施す装置において、複数の基板Wを鉛直方向に間隔を有して多段に積載可能な基板保持具が用いられる。基板保持具は、鉛直方向に沿って延びる複数の支柱の各々に設けられる支持部により各基板を保持する。この場合、支持部の近傍における基板の上にパーティクルが発生しやすい。
(particle)
In an apparatus that performs various processes on a plurality of substrates W at once, a substrate holder is used that can stack a plurality of substrates W in multiple stages with intervals in the vertical direction. The substrate holder holds each substrate using a support section provided on each of a plurality of columns extending in the vertical direction. In this case, particles are likely to be generated on the substrate near the support portion.

本発明者らは、シミュレーションにより基板変形の挙動を解析した結果、基板保持具と基板との間の熱変形量の違いにより基板保持具の支持部と基板の裏面とが擦れてパーティクルが生じ、擦れた箇所の下方に位置する基板の上に付着することを見出した。本発明者らは、パーティクルの発生を抑制するために鋭意検討した結果、以下の実施形態に係る基板処理装置及び基板保持具に想到した。 As a result of analyzing the behavior of substrate deformation through simulation, the present inventors found that due to the difference in the amount of thermal deformation between the substrate holder and the substrate, the supporting part of the substrate holder rubs against the back surface of the substrate, generating particles. It was found that it adhered to the substrate located below the rubbed area. As a result of intensive studies to suppress the generation of particles, the present inventors came up with a substrate processing apparatus and a substrate holder according to the following embodiments.

(基板処理装置)
図1を参照し、実施形態に係る基板処理装置1について説明する。図1は、実施形態に係る基板処理装置1を示す概略図である。
(Substrate processing equipment)
With reference to FIG. 1, a substrate processing apparatus 1 according to an embodiment will be described. FIG. 1 is a schematic diagram showing a substrate processing apparatus 1 according to an embodiment.

基板処理装置1は、複数の基板Wに対して一度に各種の処理を施す装置である。基板Wは、例えば半導体ウエハである。各種の処理は、例えば成膜処理、エッチング処理又はこれらの組み合わせである。基板処理装置1は、全体として縦長の鉛直方向に延びた形状を有する。基板処理装置1は、縦長で鉛直方向に延びた処理容器10を有する。処理容器10は、例えば石英により形成される。処理容器10は、例えば円筒体の内管11と、内管11の外側に同心的に載置された有天井の外管12との2重管構造を有する。 The substrate processing apparatus 1 is an apparatus that performs various processes on a plurality of substrates W at once. The substrate W is, for example, a semiconductor wafer. The various treatments include, for example, film formation treatment, etching treatment, or a combination thereof. The substrate processing apparatus 1 has an overall vertically elongated shape. The substrate processing apparatus 1 includes a processing container 10 that is long and extends in the vertical direction. The processing container 10 is made of quartz, for example. The processing container 10 has, for example, a double tube structure including an inner tube 11 having a cylindrical shape and an outer tube 12 with a ceiling placed concentrically outside the inner tube 11.

処理容器10の下端は、マニホールド20により気密的に保持される。マニホールド20は、例えばステンレス鋼等の金属により形成される。マニホールド20は、例えば図示しないベースプレートに固定される。 The lower end of the processing container 10 is held airtight by a manifold 20. The manifold 20 is made of metal such as stainless steel, for example. The manifold 20 is fixed to a base plate (not shown), for example.

マニホールド20は、処理容器10内に処理ガスや、不活性ガス(例えばNガス)等のパージガスを導入するインジェクタ30と、処理容器10内を排気するガス排気部40とを有する。処理ガスの種類としては、特に限定されず、成膜する膜の種類等に応じて当業者が適宜選択できる。 The manifold 20 includes an injector 30 that introduces a processing gas and a purge gas such as an inert gas (for example, N 2 gas) into the processing container 10 , and a gas exhaust section 40 that exhausts the inside of the processing container 10 . The type of processing gas is not particularly limited, and can be appropriately selected by those skilled in the art depending on the type of film to be formed.

インジェクタ30には、処理ガスを導入するための導入配管31が接続される。導入配管31には、ガス流量を調整するための、図示しないマスフローコントローラ等の流量調整部や図示しないバルブ等が介設される。 An introduction pipe 31 for introducing processing gas is connected to the injector 30 . The introduction pipe 31 is provided with a flow rate adjusting section such as a mass flow controller (not shown), a valve (not shown), etc. for adjusting the gas flow rate.

ガス排気部40には、排気配管41が接続される。排気配管41には、圧力調整弁42、真空ポンプ43等が介設される。 An exhaust pipe 41 is connected to the gas exhaust section 40 . The exhaust pipe 41 is provided with a pressure regulating valve 42, a vacuum pump 43, and the like.

マニホールド20の下端には、炉口21が形成される。炉口21には、蓋体50が設けられる。蓋体50は、円板状を有する。蓋体50は、例えばステンレス鋼等の金属により形成される。蓋体50は、昇降機構51により昇降可能である。蓋体50は、炉口21を気密に封止可能に構成される。 A furnace port 21 is formed at the lower end of the manifold 20 . A lid 50 is provided at the furnace mouth 21 . The lid body 50 has a disc shape. The lid body 50 is made of metal such as stainless steel, for example. The lid body 50 can be raised and lowered by a lifting mechanism 51. The lid body 50 is configured to be able to airtightly seal the furnace mouth 21 .

蓋体50の上には、例えば石英製の保温筒60が設置される。保温筒60の上には、基板保持具80が載置される。基板保持具80は、複数の基板Wを鉛直方向に間隔を有して多段に積載する。基板保持具80は、処理容器10内に収納可能である。基板保持具80は、蓋体50の上昇により処理容器10内に搬入される。基板保持具80は、蓋体50の下降により処理容器10内から搬出される。基板保持具80については後述する。 A heat-retaining cylinder 60 made of, for example, quartz is installed on the lid 50. A substrate holder 80 is placed on the heat retaining cylinder 60. The substrate holder 80 stacks a plurality of substrates W in multiple stages at intervals in the vertical direction. The substrate holder 80 can be stored within the processing container 10. The substrate holder 80 is carried into the processing container 10 by lifting the lid 50 . The substrate holder 80 is carried out from inside the processing container 10 by lowering the lid 50. The substrate holder 80 will be described later.

処理容器10の周囲には、ヒータ70が設けられる。ヒータ70は、処理容器10内の各基板Wを加熱する。ヒータ70は、例えば円筒形状を有する。 A heater 70 is provided around the processing container 10 . The heater 70 heats each substrate W within the processing container 10 . The heater 70 has, for example, a cylindrical shape.

基板処理装置1は、制御部90を有する。制御部90は、基板処理装置1の各部の動作を制御することにより、基板Wに対して各種の処理を実施する。制御部90は、例えばコンピュータであってよい。基板処理装置1の各部の動作を行うコンピュータのプログラムは、記憶媒体に記憶される。記憶媒体は、例えばフレキシブルディスク、コンパクトディスク、ハードディスク、フラッシュメモリ、DVD等であってよい。 The substrate processing apparatus 1 includes a control section 90 . The control unit 90 performs various processes on the substrate W by controlling the operations of each unit of the substrate processing apparatus 1 . The control unit 90 may be, for example, a computer. A computer program for operating each part of the substrate processing apparatus 1 is stored in a storage medium. The storage medium may be, for example, a flexible disk, a compact disk, a hard disk, a flash memory, a DVD, or the like.

(基板保持具)
図1から図5を参照し、基板保持具80について説明する。図2は、図1のII-II矢視断面図である。図3は、図2のIII-III矢視断面図である。図4は、図3の一部を拡大して示す図である。図5は、図3のV-V矢視断面図である。
(Substrate holder)
The substrate holder 80 will be described with reference to FIGS. 1 to 5. FIG. 2 is a sectional view taken along the line II--II in FIG. FIG. 3 is a sectional view taken along the line III--III in FIG. 2. FIG. 4 is an enlarged view of a part of FIG. 3. FIG. 5 is a sectional view taken along the line VV in FIG. 3.

基板保持具80は、複数の基板Wを鉛直方向に間隔を有して多段に積載可能に構成される。基板保持具80は、各基板Wを水平姿勢で保持する。基板保持具80は、例えば石英により形成される。基板保持具80に保持される複数の基板Wは、1つのバッチを構成し、バッチ単位で各種の処理が施される。基板保持具80は、天板81と、底板82と、複数の支柱83と、複数の支持部84とを有する。 The substrate holder 80 is configured to be able to stack a plurality of substrates W in multiple stages at intervals in the vertical direction. The substrate holder 80 holds each substrate W in a horizontal position. The substrate holder 80 is made of quartz, for example. The plurality of substrates W held by the substrate holder 80 constitute one batch, and various processes are performed on each batch. The substrate holder 80 includes a top plate 81 , a bottom plate 82 , a plurality of support columns 83 , and a plurality of support parts 84 .

天板81は、水平姿勢で配置される。天板81は、例えば円板状を有する。天板81の直径は、例えば基板Wの直径よりも大きい。 The top plate 81 is placed in a horizontal position. The top plate 81 has, for example, a disk shape. The diameter of the top plate 81 is larger than the diameter of the substrate W, for example.

底板82は、天板81よりも下方において、天板81と対向して配置される。底板82は、例えば円板状を有する。底板82の直径は、例えば天板81の直径と同じであってよい。 The bottom plate 82 is disposed below the top plate 81 and facing the top plate 81. The bottom plate 82 has, for example, a disk shape. The diameter of the bottom plate 82 may be the same as the diameter of the top plate 81, for example.

複数の支柱83は、それぞれ天板81と底板82との間に設けられる。各支柱83は、鉛直方向に沿って延びる。各支柱83は、上端が天板81と連結され、下端が底板82と連結される。複数の支柱83は、同一円周上に設けられる。図示の例では、支柱83は3本である。 A plurality of pillars 83 are provided between the top plate 81 and the bottom plate 82, respectively. Each support column 83 extends along the vertical direction. Each support column 83 has an upper end connected to the top plate 81 and a lower end connected to the bottom plate 82. The plurality of support columns 83 are provided on the same circumference. In the illustrated example, there are three pillars 83.

複数の支持部84は、各支柱83に鉛直方向に間隔を有して設けられる。支持部84の個数は、例えば基板保持部80が保持する基板Wの枚数と同じである。各支持部84は、支柱83からボートの中心に向けて水平方向に延びる。各支持部84は、例えば平面視で扇形状を有する。各支持部84は、基板Wの周縁部を支持する。各支持部84は、載置面84aと、傾斜面84bとを有する。 The plurality of support parts 84 are provided on each support column 83 at intervals in the vertical direction. The number of supporting parts 84 is, for example, the same as the number of substrates W held by the substrate holding part 80. Each support portion 84 extends horizontally from the strut 83 toward the center of the boat. Each support portion 84 has, for example, a fan shape in plan view. Each support portion 84 supports a peripheral portion of the substrate W. Each support portion 84 has a mounting surface 84a and an inclined surface 84b.

載置面84aは、基端が支柱83と連なる。載置面84aは、例えば水平方向に沿った平坦面である。載置面84aには、基板Wの周縁部が載置される。 The mounting surface 84a has a base end connected to the support column 83. The mounting surface 84a is, for example, a flat surface along the horizontal direction. A peripheral portion of the substrate W is placed on the placement surface 84a.

傾斜面84bは、載置面84aから支持部84の外縁に向けて下方に傾斜する。傾斜面84bは、載置面84aとの境界が面取りされている。傾斜面84bは、第1傾斜面84cと、第2傾斜面84dとを有する。第1傾斜面84cは、載置面84aから離れるにつれて下方に傾斜する。第2傾斜面84dは、載置面84aと第1傾斜面84cとの間に位置する。第2傾斜面84dは、載置面84aから第1傾斜面84cに向けて下方に傾斜する。 The inclined surface 84b is inclined downward from the mounting surface 84a toward the outer edge of the support portion 84. The boundary between the inclined surface 84b and the mounting surface 84a is chamfered. The inclined surface 84b has a first inclined surface 84c and a second inclined surface 84d. The first inclined surface 84c slopes downward as it moves away from the mounting surface 84a. The second inclined surface 84d is located between the mounting surface 84a and the first inclined surface 84c. The second inclined surface 84d slopes downward from the mounting surface 84a toward the first inclined surface 84c.

第2傾斜面84dの高さH2を第2傾斜面84dの水平長さL2で除した第2値は、第1傾斜面84cの高さH1を第1傾斜面84cの水平長さL1で除した第1値よりも小さい。言い換えると、第2傾斜面84dの水平面に対する第2角度θ2は、第1傾斜面84cの水平面に対する第1角度θ1よりも小さい。この場合、支持部84と基板Wの裏面との擦れに起因するパーティクルの発生を抑制できる。これは、第2値が第1値よりも小さい場合、載置面84aと傾斜面84bとの境界が滑らかになるためと考えられる。 The second value obtained by dividing the height H2 of the second inclined surface 84d by the horizontal length L2 of the second inclined surface 84d is the height H1 of the first inclined surface 84c divided by the horizontal length L1 of the first inclined surface 84c. is smaller than the first value. In other words, the second angle θ2 of the second slope 84d with respect to the horizontal plane is smaller than the first angle θ1 of the first slope 84c with respect to the horizontal plane. In this case, generation of particles due to friction between the support portion 84 and the back surface of the substrate W can be suppressed. This is considered to be because when the second value is smaller than the first value, the boundary between the mounting surface 84a and the inclined surface 84b becomes smooth.

第1傾斜面84cは、例えばR面である。この場合、第1傾斜面84cと第2傾斜面84dとの境界が滑らかになりやすい。第1傾斜面84cの曲率半径は、例えば5mm以上15mm以下であってよく、好ましくは10mmである。第1傾斜面84cは、C面であってもよい。 The first inclined surface 84c is, for example, a rounded surface. In this case, the boundary between the first inclined surface 84c and the second inclined surface 84d tends to be smooth. The radius of curvature of the first inclined surface 84c may be, for example, 5 mm or more and 15 mm or less, and preferably 10 mm. The first inclined surface 84c may be a C-plane.

第2傾斜面84dは、例えばR面である。この場合、載置面84aと第2傾斜面84dとの境界が滑らかになりやすく、かつ第1傾斜面84cと第2傾斜面84dとの境界が滑らかになりやすい。第2傾斜面84dの曲率半径は、例えば第1傾斜面84cの曲率半径よりも大きい。第2傾斜面84dの曲率半径は、例えば15mm以上25mm以下であってよく、好ましくは20mmである。第2傾斜面84dは、C面であってもよい。第2傾斜面84dの水平長さL2は、例えば第1傾斜面84cの水平長さL1よりも短い。 The second inclined surface 84d is, for example, a rounded surface. In this case, the boundary between the mounting surface 84a and the second inclined surface 84d tends to be smooth, and the boundary between the first inclined surface 84c and the second inclined surface 84d tends to become smooth. The radius of curvature of the second inclined surface 84d is, for example, larger than the radius of curvature of the first inclined surface 84c. The radius of curvature of the second inclined surface 84d may be, for example, 15 mm or more and 25 mm or less, and preferably 20 mm. The second inclined surface 84d may be a C-plane. The horizontal length L2 of the second inclined surface 84d is shorter than the horizontal length L1 of the first inclined surface 84c, for example.

(実施例)
前述した処理容器10内に複数の基板Wを保持した基板保持具A1,A2,Bを収納し、処理容器10内において複数の基板Wに膜を形成した後、各基板Wの上に付着したパーティクルの個数を測定した。
(Example)
The substrate holders A1, A2, and B holding a plurality of substrates W are housed in the processing container 10 described above, and after forming a film on the plurality of substrates W in the processing container 10, a film is deposited on each substrate W. The number of particles was measured.

基板保持具A1,A2は、載置面84aと、曲率半径が10mm(R10)の第1傾斜面84cと、曲率半径が20mm(R20)の第2傾斜面84dとを有する支持部84を有する。基板保持具A1と基板保持具A2とは、同一仕様の基板保持具であり、個体が異なる。 The substrate holders A1 and A2 have a support portion 84 having a mounting surface 84a, a first inclined surface 84c with a radius of curvature of 10 mm (R10), and a second inclined surface 84d with a radius of curvature of 20 mm (R20). . The substrate holder A1 and the substrate holder A2 are substrate holders with the same specifications and are different individuals.

基板保持具Bは、載置面84aと、曲率半径が10mm(R10)の第1傾斜面84cとを有し、第2傾斜面84dを有しない支持部を有する。 The substrate holder B has a support portion that has a mounting surface 84a and a first inclined surface 84c with a radius of curvature of 10 mm (R10), but does not have a second inclined surface 84d.

図6は、パーティクルの個数を測定した結果を示す図である。図6では、左側から順に基板保持具B、基板保持具A1、基板保持具A2を用いた場合の、基板Wの上に付着したパーティクルの個数[個]を示す。図6中のパーティクルの個数は、各基板保持具A1,A2,Bに保持された複数の基板Wのうちの所定枚数の基板Wの上に付着したパーティクルの個数の平均値である。 FIG. 6 is a diagram showing the results of measuring the number of particles. FIG. 6 shows the number of particles attached to the substrate W when the substrate holder B, substrate holder A1, and substrate holder A2 are used in order from the left. The number of particles in FIG. 6 is the average number of particles attached to a predetermined number of substrates W out of the plurality of substrates W held by each substrate holder A1, A2, and B.

図6に示されるように、基板保持具Bを用いた場合のパーティクルの個数は44個であり、基板保持具A1を用いた場合のパーティクルの個数は5個であり、基板保持具A2を用いた場合のパーティクルの個数は6個であった。この結果から、載置面84aと第1傾斜面84cとの間に第1傾斜面84cよりも曲率半径が大きい第2傾斜面84dが設けられることにより、第2傾斜面84dが設けられない場合よりもパーティクルの発生を抑制できることが示された。 As shown in FIG. 6, the number of particles when using substrate holder B is 44, the number of particles when using substrate holder A1 is 5, and the number of particles when using substrate holder A2 is 44. In this case, the number of particles was 6. From this result, when the second inclined surface 84d is provided between the mounting surface 84a and the first inclined surface 84c and the second inclined surface 84d has a larger radius of curvature than the first inclined surface 84c, the second inclined surface 84d is not provided. It was shown that the generation of particles could be suppressed more than the conventional method.

また、図6に示されるように、基板保持具A1を用いた場合と基板保持具A2を用いた場合とにおいてパーティクルの個数が略同じであった。この結果から、個体の違いによるパーティクルの発生への影響はほとんどないことが示された。 Further, as shown in FIG. 6, the number of particles was approximately the same in the case where the substrate holder A1 was used and the case where the substrate holder A2 was used. This result showed that individual differences had little effect on particle generation.

次に、前述した処理容器10内に複数の基板Wを保持した基板保持具A1,A2,Bを収納し、処理容器10内において複数の基板Wに膜を形成したときの、各基板Wに形成された膜の厚さと、膜の厚さの面内均一性を測定した。測定の結果、いずれの基板保持具A1,A2,Bを用いた場合においても、膜の厚さ及び膜の厚さの面内均一性は略同じであった。この結果から、載置面84aと第1傾斜面84cとの間に第1傾斜面84cよりも曲率半径が大きい第2傾斜面84dを設けることによる膜特性への影響はないと考えられる。 Next, the substrate holders A1, A2, and B holding a plurality of substrates W are stored in the processing container 10 described above, and when a film is formed on the plurality of substrates W in the processing container 10, each substrate W is The thickness of the formed film and the in-plane uniformity of the film thickness were measured. As a result of the measurement, the film thickness and the in-plane uniformity of the film thickness were approximately the same regardless of which substrate holder A1, A2, or B was used. From this result, it is considered that providing the second inclined surface 84d, which has a larger radius of curvature than the first inclined surface 84c, between the mounting surface 84a and the first inclined surface 84c does not affect the film characteristics.

今回開示された実施形態はすべての点で例示であって制限的なものではないと考えられるべきである。上記の実施形態は、添付の請求の範囲及びその趣旨を逸脱することなく、様々な形態で省略、置換、変更されてもよい。 The embodiments disclosed this time should be considered to be illustrative in all respects and not restrictive. The embodiments described above may be omitted, replaced, or modified in various forms without departing from the scope and spirit of the appended claims.

上記の実施形態では、処理容器が2重管構造を有する形態を説明したが、本開示はこれに限定されない。例えば、処理容器は単管構造を有する形態であってもよい。 In the above embodiment, the processing container has a double pipe structure, but the present disclosure is not limited thereto. For example, the processing container may have a single tube structure.

上記の実施形態では、処理容器の下方に配置されたインジェクタから上方に向けて処理ガスを供給する形態を説明したが、本開示はこれに限定されない。例えば、処理容器の長手方向に沿って配置されたインジェクタから水平方向に処理ガスを供給する形態であってもよい。 In the embodiment described above, the processing gas is supplied upward from the injector disposed below the processing container, but the present disclosure is not limited thereto. For example, the processing gas may be supplied horizontally from an injector arranged along the longitudinal direction of the processing container.

上記の実施形態では、基板処理装置がプラズマ生成部を有しない形態を説明したが、本開示はこれに限定されない。例えば、基板処理装置は処理容器内に供給される処理ガスからプラズマを生成するプラズマ生成部を有する形態であってもよい。 In the embodiments described above, the substrate processing apparatus does not include a plasma generation section, but the present disclosure is not limited thereto. For example, the substrate processing apparatus may include a plasma generation section that generates plasma from a processing gas supplied into a processing container.

1 基板処理装置
80 基板保持具
83 支柱
84 支持部
84a 載置面
84b 傾斜面
84c 第1傾斜面
84d 第2傾斜面
W 基板
1 Substrate processing apparatus 80 Substrate holder 83 Support column 84 Support part 84a Placement surface 84b Inclined surface 84c First inclined surface 84d Second inclined surface W Substrate

Claims (5)

複数の基板を鉛直方向に間隔を有して多段に積載可能な基板保持具であって、
同一円周上に設けられ、鉛直方向に沿って延びる複数の支柱と、
前記複数の支柱の各々に鉛直方向に間隔を有して設けられ、各々が水平方向に延びる複数の支持部と、
を有し、
前記複数の支持部の各々は、
前記基板が載置される載置面と、
前記載置面の外縁の少なくとも一部に設けられる傾斜面と、
を有し、
前記傾斜面は、
前記載置面から離れるにつれて下方に傾斜する第1傾斜面と、
前記載置面と前記第1傾斜面との間に位置し、前記載置面から前記第1傾斜面に向けて下方に傾斜する第2傾斜面と、
を有し、
前記第2傾斜面の高さを前記第2傾斜面の水平長さで除した第2値は、前記第1傾斜面の高さを前記第1傾斜面の水平長さで除した第1値よりも小さい、
基板保持具。
A substrate holder capable of stacking a plurality of substrates in multiple stages with intervals in the vertical direction,
A plurality of pillars provided on the same circumference and extending along the vertical direction;
a plurality of support parts provided at intervals in the vertical direction on each of the plurality of support columns, each of which extends in the horizontal direction;
has
Each of the plurality of supporting parts is
a mounting surface on which the substrate is mounted;
an inclined surface provided on at least a portion of the outer edge of the placement surface;
has
The inclined surface is
a first slope that slopes downward as it moves away from the placement surface;
a second inclined surface located between the placement surface and the first inclined surface and inclined downward from the placement surface toward the first inclined surface;
has
The second value obtained by dividing the height of the second inclined surface by the horizontal length of the second inclined surface is the first value obtained by dividing the height of the first inclined surface by the horizontal length of the first inclined surface. smaller than,
Board holder.
前記第1傾斜面及び前記第2傾斜面は、R面であり、
前記第2傾斜面の曲率半径は、前記第1傾斜面の曲率半径よりも大きい、
請求項1に記載の基板保持具。
The first inclined surface and the second inclined surface are R surfaces,
The radius of curvature of the second inclined surface is larger than the radius of curvature of the first inclined surface.
The substrate holder according to claim 1.
前記第2傾斜面の水平長さは、前記第1傾斜面の水平長さよりも短い、
請求項1又は2に記載の基板保持具。
The horizontal length of the second inclined surface is shorter than the horizontal length of the first inclined surface.
The substrate holder according to claim 1 or 2.
前記支持部は、平面視で扇形状を有する、
請求項1又は2に記載の基板保持具。
The support portion has a fan shape in plan view.
The substrate holder according to claim 1 or 2.
複数の基板を鉛直方向に間隔を有して多段に積載可能な基板保持具と、
前記基板保持具を収納可能な処理容器と、
を備え、
前記基板保持具は、
同一円周上に設けられ、鉛直方向に沿って延びる複数の支柱と、
前記複数の支柱の各々に鉛直方向に間隔を有して設けられ、各々が水平方向に延びる複数の支持部と、
を有し、
前記複数の支持部の各々は、
前記基板が載置される載置面と、
前記載置面の外縁の少なくとも一部に設けられる傾斜面と、
を有し、
前記傾斜面は、
前記載置面から離れるにつれて下方に傾斜する第1傾斜面と、
前記載置面と前記第1傾斜面との間に位置し、前記載置面から前記第1傾斜面に向けて下方に傾斜する第2傾斜面と、
を有し、
前記第2傾斜面の高さを前記第2傾斜面の水平長さで除した第2値は、前記第1傾斜面の高さを前記第1傾斜面の水平長さで除した第1値よりも小さい、
基板処理装置。
a substrate holder capable of stacking a plurality of substrates in multiple stages with intervals in the vertical direction;
a processing container capable of accommodating the substrate holder;
Equipped with
The substrate holder is
A plurality of pillars provided on the same circumference and extending along the vertical direction;
a plurality of support parts provided at intervals in the vertical direction on each of the plurality of support columns, each of which extends in the horizontal direction;
has
Each of the plurality of supporting parts is
a mounting surface on which the substrate is mounted;
an inclined surface provided on at least a portion of the outer edge of the placement surface;
has
The inclined surface is
a first slope that slopes downward as it moves away from the placement surface;
a second inclined surface located between the placement surface and the first inclined surface and inclined downward from the placement surface toward the first inclined surface;
has
The second value obtained by dividing the height of the second inclined surface by the horizontal length of the second inclined surface is the first value obtained by dividing the height of the first inclined surface by the horizontal length of the first inclined surface. smaller than,
Substrate processing equipment.
JP2022142537A 2022-09-07 2022-09-07 Substrate holder and substrate processing equipment Pending JP2024037598A (en)

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