KR20240034649A - Substrate holder and substrate processing device - Google Patents

Abstract

The object of the present invention is to provide a technology that can suppress the generation of particles.
A substrate holding tool according to an aspect of the present disclosure is a substrate holding tool capable of stacking a plurality of substrates in multiple stages at intervals in the vertical direction, and includes a plurality of supports provided on the same circumference and extending along the vertical direction, Each of the plurality of supports is provided at intervals in the vertical direction, and each has a plurality of support parts extending in the horizontal direction, each of the plurality of support parts having a loading surface on which the substrate is loaded, and a portion of the loading surface. It has an inclined surface provided on at least a portion of the outer edge, wherein the inclined surface includes a first inclined surface that slopes downward as it is spaced from the loading surface, and is located between the loading surface and the first inclined surface, and the first inclined surface is separated from the loading surface. It has a second slope inclined downward toward the slope, and the second value obtained by dividing the height of the second slope by the horizontal length of the second slope is obtained by dividing the height of the first slope by the horizontal length of the first slope. It is smaller than the first value.

Description

Substrate holding device and substrate processing device {SUBSTRATE HOLDER AND SUBSTRATE PROCESSING DEVICE}

This disclosure relates to a substrate holding device and a substrate processing apparatus.

In a heat treatment boat used in a vertical heat treatment apparatus, a technique is known to round the edge portion of the groove in contact with the wafer (see, for example, Patent Document 1).

Japanese Patent Publication No. 7-161654

The present disclosure provides a technology that can suppress the generation of particles.

A substrate holding tool according to an aspect of the present disclosure is a substrate holding tool capable of stacking a plurality of substrates in multiple stages at intervals in the vertical direction, and includes a plurality of supports provided on the same circumference and extending along the vertical direction, Each of the plurality of supports is provided at intervals in the vertical direction, and each has a plurality of support parts extending in the horizontal direction, each of the plurality of support parts having a loading surface on which the substrate is loaded, and a portion of the loading surface. It has an inclined surface provided on at least a portion of the outer edge, wherein the inclined surface includes a first inclined surface that slopes downward as it is spaced from the loading surface, and is located between the loading surface and the first inclined surface, and the first inclined surface is separated from the loading surface. It has a second slope inclined downward toward the slope, and the second value obtained by dividing the height of the second slope by the horizontal length of the second slope is obtained by dividing the height of the first slope by the horizontal length of the first slope. It is smaller than the first value.

According to the present disclosure, the generation of particles can be suppressed.

1 is a schematic diagram showing a substrate processing apparatus according to an embodiment.
FIG. 2 is a cross-sectional view taken in the direction of arrow II-II in FIG. 1.
FIG. 3 is a cross-sectional view taken in the direction of arrow III-III in FIG. 2.
FIG. 4 is an enlarged view showing a portion of FIG. 3.
FIG. 5 is a cross-sectional view viewed in the direction of arrow VV of FIG. 3.
Figure 6 is a diagram showing the results of measuring the number of particles.

Hereinafter, non-limiting example embodiments of the present disclosure will be described with reference to the attached drawings. In all of the attached drawings, identical or corresponding members or parts are given the same or corresponding reference numerals and redundant descriptions are omitted.

(particle)

In an apparatus that performs various processes on a plurality of substrates W at once, a substrate holding tool capable of stacking the plurality of substrates W in multiple stages at intervals in the vertical direction is used. The substrate holding tool holds each substrate by a support portion provided on each of a plurality of supports extending along the vertical direction. In this case, particles are likely to be generated on the substrate near the support portion.

The present inventors analyzed the behavior of substrate deformation through simulation, and as a result, the difference in thermal strain between the substrate holder and the substrate caused friction between the support portion of the substrate holder and the back surface of the substrate, generating particles, and particles were generated at the friction points. It was found that it adhered to the substrate located below. As a result of intensive study to suppress the generation of particles, the present inventors have developed a substrate processing apparatus and a substrate holding device according to the following embodiments.

(Substrate processing device)

With reference to FIG. 1 , a substrate processing apparatus 1 according to an embodiment will be described. FIG. 1 is a schematic diagram showing a substrate processing apparatus 1 according to an embodiment.

The substrate processing apparatus 1 is an apparatus that performs various processes on a plurality of substrates W at once. The substrate W is, for example, a semiconductor wafer. Various treatments include, for example, film forming treatment, etching treatment, or a combination thereof. The substrate processing apparatus 1 has an overall shape extending in a vertically long vertical direction. The substrate processing apparatus 1 has a processing container 10 extending vertically in a vertical direction. The processing vessel 10 is formed, for example, of quartz. The processing vessel 10 has, for example, a double pipe structure including a cylindrical inner tube 11 and an outer tube 12 with a ceiling concentrically placed on the outside of the inner tube 11.

The lower end of the processing vessel 10 is airtightly held by the manifold 20. The manifold 20 is formed of metal such as stainless steel, for example. The manifold 20 is fixed to, for example, a base plate (not shown).

The manifold 20 includes an injector 30 that introduces a purge gas such as a processing gas or an inert gas (for example, N ₂ gas) into the processing container 10, and a gas exhaust that exhausts the processing container 10. Has a base (40). The type of processing gas is not particularly limited and can be appropriately selected by a person skilled in the art depending on the type of film to be formed.

The injector 30 is connected to an introduction pipe 31 for introducing the processing gas. In the introduction pipe 31, a flow rate adjustment unit such as a mass flow controller (not shown) or a valve (not shown) are installed interposed thereto to adjust the gas flow rate.

An exhaust pipe 41 is connected to the gas exhaust unit 40. A pressure adjustment valve 42, a vacuum pump 43, etc. are installed in the exhaust pipe 41.

A furnace hole 21 is formed at the bottom of the manifold 20. A cover 50 is provided on the furnace opening 21. The cover 50 has a disk shape. The cover 50 is made of metal such as stainless steel, for example. The cover 50 can be raised and lowered by the lifting mechanism 51. The cover 50 is configured to hermetically seal the furnace opening 21.

On the cover 50, a heat insulating container 60 made of, for example, quartz is installed. A substrate holding tool 80 is placed on the thermal insulation container 60 . The substrate holding tool 80 stacks a plurality of substrates W in multiple stages at intervals in the vertical direction. The substrate holding tool 80 can be stored in the processing container 10 . The substrate holding tool 80 is brought into the processing container 10 by raising the cover 50 . The substrate holding tool 80 is carried out from the processing container 10 by lowering the cover 50 . The substrate holding member 80 will be described later.

A heater 70 is provided around the processing container 10. The heater 70 heats each substrate W within the processing container 10. The heater 70 has a cylindrical shape, for example.

The substrate processing apparatus 1 has a control unit 90 . The control unit 90 controls the operation of each part of the substrate processing apparatus 1 to perform various processes on the substrate W. The control unit 90 may be, for example, a computer. A computer program that performs the operation of each part of the substrate processing apparatus 1 is stored in a storage medium. The storage medium may be, for example, a flexible disk, compact disk, hard disk, flash memory, DVD, etc.

(Substrate holding support)

1 to 5, the substrate holding tool 80 will be described. FIG. 2 is a cross-sectional view taken in the direction of arrow II-II in FIG. 1. FIG. 3 is a cross-sectional view taken in the direction of arrow III-III in FIG. 2. FIG. 4 is an enlarged view showing a portion of FIG. 3. Figure 5 is a cross-sectional view taken in the direction of arrows V-V in Figure 3.

The substrate holding tool 80 is configured to be capable of stacking a plurality of substrates W in multiple stages at intervals in the vertical direction. The substrate holding tool 80 holds each substrate W in a horizontal position. The substrate holding member 80 is formed of, for example, quartz. The plurality of substrates W held by the substrate holding tool 80 constitute one batch, and various processes are performed on a batch basis. The substrate holding device 80 has a top plate 81, a bottom plate 82, a plurality of supports 83, and a plurality of support portions 84.

The ceiling plate 81 is arranged in a horizontal position. The ceiling plate 81 has a disk shape, for example. The diameter of the ceiling plate 81 is larger than the diameter of the substrate W, for example.

The base plate 82 is located below the ceiling plate 81 and is disposed opposite to the ceiling plate 81 . The bottom plate 82 has a disk shape, for example. The diameter of the bottom plate 82 may be the same as the diameter of the top plate 81, for example.

A plurality of supports 83 are provided between the ceiling plate 81 and the bottom plate 82, respectively. Each strut 83 extends along the vertical direction. The upper end of each support 83 is connected to the ceiling plate 81, and the lower end is connected to the bottom plate 82. A plurality of supports 83 are provided on the same circumference. In the example of the city, there are three pillars 83.

A plurality of support portions 84 are provided on each support column 83 at intervals in the vertical direction. The number of supports 84 is, for example, the same as the number of substrates W held by the substrate holding portion 80. Each support portion 84 extends horizontally from the strut 83 toward the center of the boat. Each support portion 84 has, for example, a fan shape when viewed in plan view. Each support portion 84 supports the peripheral portion of the substrate W. Each support portion 84 has a loading surface 84a and an inclined surface 84b.

The base of the loading surface (84a) is connected to the support (83). The loading surface 84a is, for example, a flat surface along the horizontal direction. The peripheral portion of the substrate W is placed on the loading surface 84a.

The inclined surface 84b slopes downward from the loading surface 84a toward the outer edge of the support portion 84. The boundary of the inclined surface 84b and the loading surface 84a is chamfered. The inclined surface 84b has a first inclined surface 84c and a second inclined surface 84d. The first inclined surface 84c slopes downward as it moves away from the loading surface 84a. The second inclined surface 84d is located between the loading surface 84a and the first inclined surface 84c. The second inclined surface 84d slopes downward from the loading surface 84a toward the first inclined surface 84c.

The second value obtained by dividing the height H2 of the second inclined surface 84d by the horizontal length L2 of the second inclined surface 84d is the second value obtained by dividing the height H1 of the first inclined surface 84c by the horizontal length L1 of the first inclined surface 84c. It is smaller than the value of 1. In other words, the second angle θ2 of the second inclined surface 84d with respect to the horizontal plane is smaller than the first angle θ1 of the first inclined surface 84c with respect to the horizontal plane. In this case, the generation of particles due to friction between the back surfaces of the support portion 84 and the substrate W can be suppressed. This is believed to be because, when the second value is smaller than the first value, the boundary between the loading surface 84a and the inclined surface 84b becomes smooth.

The first inclined surface 84c is, for example, an R surface. In this case, the boundary between the first inclined surface 84c and the second inclined surface 84d is likely to be smooth. The radius of curvature of the first inclined surface 84c may be, for example, 5 mm or more and 15 mm or less, and is preferably 10 mm. The first inclined surface 84c may be a C surface.

The second inclined surface 84d is, for example, an R surface. In this case, the boundary between the loading surface 84a and the second inclined surface 84d is likely to become smooth, and the boundary between the first inclined surface 84c and the second inclined surface 84d is likely to be smooth. The radius of curvature of the second inclined surface 84d is, for example, larger than the radius of curvature of the first inclined surface 84c. The radius of curvature of the second inclined surface 84d may be, for example, 15 mm or more and 25 mm or less, and is preferably 20 mm. The second inclined surface 84d may be a C surface. For example, the horizontal length L2 of the second inclined surface 84d is shorter than the horizontal length L1 of the first inclined surface 84c.

(Example)

After storing the substrate holding tools A1, A2, and B holding the plurality of substrates W in the processing container 10 described above, and forming a film on the plurality of substrates W in the processing container 10, The number of particles attached to each substrate (W) was measured.

The substrate holding members A1 and A2 are supports having a loading surface 84a, a first inclined surface 84c with a radius of curvature of 10 mm (R10), and a second inclined surface 84d with a radius of curvature of 20 mm (R20). It has (84). The substrate holding device A1 and the substrate holding device A2 are substrate holding devices with the same specifications, but the individuals are different.

The substrate holding tool B has a loading surface 84a, a first inclined surface 84c with a radius of curvature of 10 mm (R10), and a support portion without a second inclined surface 84d.

Figure 6 is a diagram showing the results of measuring the number of particles. In FIG. 6, the number [number] of particles attached on the substrate W is shown in the case of using the substrate holding device B, the substrate holding device A1, and the substrate holding device A2 in order from the left. The number of particles in FIG. 6 is the average value of the number of particles attached to a predetermined number of substrates W among the plurality of substrates W held by each substrate holding device A1, A2, and B.

As shown in FIG. 6, the number of particles when using the substrate holding device B is 44, the number of particles when using the substrate holding device A1 is 5, and the number of particles when using the substrate holding device A2 is 5. The number was 6. From this result, a second inclined surface 84d having a larger radius of curvature than the first inclined surface 84c is provided between the loading surface 84a and the first inclined surface 84c, so that the second inclined surface 84d is not provided. It has been shown that the generation of particles can be further suppressed.

Additionally, as shown in FIG. 6, the number of particles was approximately the same when using the substrate holding device A1 and when using the substrate holding device A2. From these results, it was shown that there was almost no influence on the generation of particles due to individual differences.

Next, the substrate holding devices A1, A2, and B holding the plurality of substrates W are stored in the processing container 10 described above, and a film is formed on the plurality of substrates W in the processing container 10. When this was done, the thickness of the film formed on each substrate W and the in-plane uniformity of the film thickness were measured. As a result of the measurement, the film thickness and in-plane uniformity of the film thickness were approximately the same regardless of which substrate holding device A1, A2, or B was used. From these results, it is believed that there is no influence on the film properties by providing the second inclined surface 84d with a larger radius of curvature than the first inclined surface 84c between the loading surface 84a and the first inclined surface 84c.

The embodiment disclosed this time should be considered illustrative in all respects and not restrictive. The above-described embodiments may be omitted, replaced, or changed in various forms without departing from the scope and spirit of the attached claims.

In the above embodiment, a form in which the processing vessel has a double pipe structure has been described, but the present disclosure is not limited to this. For example, the processing vessel may have a single pipe structure.

In the above embodiment, a form in which processing gas is supplied upward from an injector disposed below the processing vessel has been described; however, the present disclosure is not limited to this. For example, the processing gas may be supplied horizontally from an injector disposed along the longitudinal direction of the processing container.

In the above embodiment, a form in which the substrate processing apparatus does not have a plasma generation unit has been described, but the present disclosure is not limited to this. For example, the substrate processing apparatus may have a plasma generating unit that generates plasma from processing gas supplied into the processing container.

Claims (5)

It is a substrate holding support that can stack multiple substrates in multiple stages at vertical intervals.
A plurality of supports provided on the same circumference and extending along the vertical direction,
A plurality of supports provided at intervals in the vertical direction on each of the plurality of supports, each extending in the horizontal direction
With
Each of the plurality of supports,
a loading surface on which the substrate is loaded,
A slope provided on at least a portion of the outer edge of the loading surface
With
The slope is,
a first inclined surface that slopes downward as it is spaced apart from the loading surface;
A second slope located between the loading surface and the first slope, and sloping downward from the loading surface toward the first slope.
With
The second value divided by the height of the second inclined surface by the horizontal length of the second inclined surface is smaller than the first value divided by the height of the first inclined surface by the horizontal length of the first inclined surface,
Substrate holding support. According to paragraph 1,
The first inclined surface and the second inclined surface are R surfaces,
The radius of curvature of the second inclined surface is larger than the radius of curvature of the first inclined surface,
Substrate holding support. According to claim 1 or 2,
The horizontal length of the second inclined surface is shorter than the horizontal length of the first inclined surface,
Substrate holding support. According to claim 1 or 2,
The support portion has a fan shape when viewed in plan.
Substrate holding support. A substrate holding support that can stack a plurality of substrates in multiple stages at intervals in the vertical direction,
A processing container capable of storing the substrate holding device.
Equipped with
The substrate holding support is,
A plurality of supports provided on the same circumference and extending along the vertical direction,
A plurality of supports provided at intervals in the vertical direction on each of the plurality of supports, each extending in the horizontal direction
With
Each of the plurality of supports,
a loading surface on which the substrate is loaded,
A slope provided on at least a portion of the outer edge of the loading surface
With
The slope is,
a first inclined surface that slopes downward as it is spaced apart from the loading surface;
A second slope located between the loading surface and the first slope, and sloping downward from the loading surface toward the first slope.
With
The second value divided by the height of the second inclined surface by the horizontal length of the second inclined surface is smaller than the first value divided by the height of the first inclined surface by the horizontal length of the first inclined surface,
Substrate processing equipment.