CN108091598B - Substrate processing apparatus - Google Patents
Substrate processing apparatus Download PDFInfo
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- CN108091598B CN108091598B CN201711162642.1A CN201711162642A CN108091598B CN 108091598 B CN108091598 B CN 108091598B CN 201711162642 A CN201711162642 A CN 201711162642A CN 108091598 B CN108091598 B CN 108091598B
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- processing apparatus
- substrate processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Abstract
The invention provides a substrate processing apparatus capable of improving the in-plane uniformity of substrate processing. A substrate processing apparatus according to one embodiment includes: a processing vessel; a rotating shaft which is provided so as to be capable of penetrating through an opening of the processing container and extends in a vertical direction; a support part provided at an upper end of the rotating shaft; a substrate holder placed on the support portion, the substrate holder holding a plurality of substrates substantially horizontally with a predetermined interval therebetween in the vertical direction; and a center of gravity position adjusting member that is disposed in a predetermined region of the support portion and adjusts a center of gravity position of a rotating body that rotates around the rotation axis and includes the support portion and the substrate holder.
Description
Technical Field
The present invention relates to a substrate processing apparatus.
Background
Conventionally, there has been known a vertical heat processing apparatus for collectively (batch-wise) performing a heat process on a plurality of substrates by using a wafer boat which is provided in a processing container so as to be rotatable about a predetermined rotation axis and which holds a plurality of substrates substantially horizontally at a predetermined interval in the vertical direction.
As a wafer boat, the following structure is known: for example, a plurality of support columns are provided between a top plate and a bottom plate which are disposed to face each other in the vertical direction, a plurality of grooves are formed at substantially equal intervals on the inner surface of each support column, and the peripheral edge portion of the wafer is inserted into and supported by the grooves (see, for example, patent document 1). Further, the following structure is known: for example, a plurality of support columns are provided between a top plate and a bottom plate which are disposed to face each other in the vertical direction, a ring member having a flat support surface is provided on the plurality of support columns, and a wafer is supported by the support surface of the ring member (see, for example, patent document 2).
However, in such a wafer boat, a support column is disposed on the side opposite to the side where the wafer is inserted, and no support column is disposed on the side where the wafer is inserted. This is because the wafer does not interfere with the support post when the wafer is inserted. Therefore, the center of gravity of the rotating body including the wafer boat rotating around the rotation axis is shifted from the center of the rotation axis to the side where the support is disposed. If the center of gravity of the rotating body is shifted, the wafer boat rotates in a tilted state, and thus the inner surface of the process container and the wafer boat easily come into contact with each other. Therefore, in order to prevent the contact between the inner surface of the process container and the wafer boat, a sufficient gap is provided between the inner surface of the process container and the wafer boat so that the contact therebetween is not generated.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2011-222653
Patent document 2: japanese patent application laid-open No. 2010-062446
Disclosure of Invention
Problems to be solved by the invention
However, if the gap between the inner surface of the process container and the wafer boat is increased, the amount of the process gas supplied to the central region of the wafer is decreased, and the in-plane uniformity of the substrate processing is decreased.
Accordingly, an object of one aspect of the present invention is to provide a substrate processing apparatus capable of improving in-plane uniformity of substrate processing.
Means for solving the problems
In order to achieve the above object, a substrate processing apparatus according to one aspect of the present invention includes: a processing vessel; a rotating shaft which is provided so as to be capable of penetrating through an opening of the processing container and extends in a vertical direction; a support part provided at an upper end of the rotating shaft; a substrate holder placed on the support portion, the substrate holder holding a plurality of substrates substantially horizontally with a predetermined interval therebetween in the vertical direction; and a center of gravity position adjusting member that is disposed in a predetermined region of the support portion and adjusts a center of gravity position of a rotating body that rotates around the rotation axis and includes the support portion and the substrate holder.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the disclosed substrate processing apparatus, the in-plane uniformity of substrate processing can be improved.
Drawings
Fig. 1 is a schematic vertical sectional view of a substrate processing apparatus according to an embodiment of the present invention.
Fig. 2 is a schematic perspective view showing a structure of a rotating body of the substrate processing apparatus of fig. 1.
Fig. 3 is an enlarged perspective view of the rotary body of fig. 2 in the vicinity of the heat retention tube.
Fig. 4 is an enlarged sectional view of the vicinity of the heat retention cylinder of the rotating body of fig. 2.
Fig. 5 is a table showing a relationship between the number of wafers held by the wafer boat and the position of the weight.
Fig. 6 is a diagram for explaining the amount of eccentricity of the shaft center of the spin rotor.
Fig. 7 is a graph showing a relationship between a wafer position and in-plane uniformity of a silicon nitride film formed on a wafer.
Fig. 8 is a view for explaining the position of the wafer held by the wafer boat.
Description of the reference numerals
1. A substrate processing apparatus; 1A, a control unit; 4. a processing vessel; 8. an inner barrel; 26. a heat-preserving cylinder; 28. a wafer boat; 60. an ejector; 90. balancing weight; w, wafer.
Detailed Description
Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. In the present specification and the drawings, substantially the same configuration is denoted by the same reference numeral, and overlapping description is omitted.
(substrate processing apparatus)
A substrate processing apparatus according to an embodiment of the present invention will be described. Fig. 1 is a schematic vertical sectional view of a substrate processing apparatus according to an embodiment of the present invention.
As shown in fig. 1, the substrate processing apparatus 1 includes a substantially cylindrical processing chamber 4 whose longitudinal direction is the vertical direction. The processing container 4 has a double-tube structure including: an outer barrel 6 having a top; and an inner cylinder 8 concentrically disposed inside the outer cylinder 6 and having a top. The lower end of the inner cylinder 8 has a flange projecting outward, and is fixed to the inner wall of the outer cylinder 6 by welding or the like. The lower end of the outer cylinder 6 has a flange projecting outward, and the lower surface of the flange of the outer cylinder 6 is supported by an annular bottom flange 10 formed of stainless steel or the like. The bottom flange 10 is fixed to the bottom plate by a fixing member such as a bolt.
A substantially disk-shaped lid portion 14 made of, for example, stainless steel is attached to an opening portion of a lower end portion of the bottom flange 10 via a sealing member 16 such as an O-ring so as to be air-tightly sealable. A rotating shaft 20 that is rotatable and extends in the vertical direction is inserted in an airtight state through a substantially central portion of the cover 14 by, for example, a magnetic fluid seal 18. A lower end of the rotary shaft 20 is connected to a rotating mechanism 22, and a table 24 made of, for example, stainless steel is fixed to an upper end of the rotary shaft 20.
A heat insulating cylinder 26 made of, for example, quartz is provided on the stage 24. Further, a wafer boat 28 made of, for example, quartz is mounted on the heat insulating cylinder 26. The wafer boat 28 holds a plurality of wafers W substantially horizontally in the process container 4 at a predetermined interval in the vertical direction. The wafers W, such as 50 to 150 wafers W, are accommodated in the wafer boat 28 in a shelf shape at predetermined intervals, for example, at intervals of about 10 mm. The stage 24, the heat insulating cylinder 26, and the wafer boat 28 constitute a rotary body that rotates about the rotary shaft 20.
Fig. 2 is a schematic perspective view showing a structure of a rotating body of the substrate processing apparatus of fig. 1. In fig. 2, a state where the rotating body is cut along the longitudinal direction is shown for convenience of explanation. Fig. 3 is an enlarged perspective view of the rotary body of fig. 2 in the vicinity of the heat retention tube. Fig. 4 is an enlarged sectional view of the vicinity of the heat retention cylinder of the rotating body of fig. 2.
As shown in fig. 2, the rotary body has a stage 24, a heat-insulating cylinder 26, and a wafer boat 28. The wafer boat 28 is a so-called ladder boat: a plurality of support columns 283 are provided between the top plate 281 and the bottom plate 282 which are disposed to face each other vertically, and a plurality of groove portions 284 are formed on the inner side surfaces of the support columns 283. The peripheral edge of the wafer W is inserted into and supported by the groove 284 of the wafer boat 28. In fig. 2, the wafer W is not shown. Since the wafer W is inserted into the wafer boat 28 from the horizontal direction, the support 283 is not disposed on the side (Y direction in fig. 2) of the wafer boat 28 where the wafer W is inserted.
As shown in fig. 3 and 4, the heat retention tube 26 includes: a substantially disk-shaped top plate 261 and a substantially disk-shaped bottom plate 262 which are arranged to face each other in the vertical direction; and a plurality of, for example, 4 pillars 263 (only two are shown in fig. 3 and 4) provided between the top plate 261 and the bottom plate 262. A plurality of substantially disk-shaped quartz heat sinks 264 are disposed substantially horizontally at predetermined intervals in the vertical direction between the top plate 261 and the bottom plate 262 which are the middle portions of the support 263. The heat retention tube 26 retains heat by accumulating heat from a heater device 48, which will be described later, so that the temperature of the region of the lower end portion of the wafer boat 28 does not excessively decrease. In fig. 2 to 4, the heat insulating cylinder 26 and the wafer boat 28 are formed separately, but they may be integrally formed of quartz. The heat insulating cylinder 26 is not limited to the illustrated form, and may be formed of, for example, quartz into a cylindrical shape.
The top plate 261 and the heat sink 264 have a notch 261a and a notch 264a, respectively, formed at positions overlapping each other in a plan view. In the illustrated example, the notch 261a and the notch 264a are formed in arc shapes. That is, the radius Ra of the top plate 261 and the fins 264 at the positions where the notch 261a and the notch 264a are formed is smaller than the radius R of the top plate 261 and the fins 264 at the positions where the notch 261a and the notch 264a are not formed.
At positions corresponding to the notch 261a and the notch 264a, a weight 90 having an arc shape as viewed from the top surface is provided along the peripheral edges of the top plate 261 and the heat sink 264. That is, the weight 90 is disposed in a region of a part of the heat insulating tube 26 in the circumferential direction. The weight 90 is provided on the bottom plate 262 to rotate integrally with the bottom plate 262. The counterweight 90 has approximately the same height as, for example, the thermal insulating cylinder 26. The weight 90 is made of a heat-resistant material such as quartz.
The weight 90 is movable on the base 262 in the radial direction of the heat radiating fins 264 (the direction indicated by arrow a in fig. 3 and 4). By moving the weight 90 in the radial direction of the heat radiating fins 264, the position of the center of gravity of the rotating body rotating about the rotating shaft 20 can be moved. For example, by moving the weight 90 outward in the radial direction of the heat radiating fins 264 (the-Y direction in fig. 3 and 4), the center of gravity position of the rotating body can be moved outward in the radial direction of the heat radiating fins 264. For example, by moving weight 90 in the center direction of heat sink 264 (the + Y direction in fig. 3 and 4), the center of gravity of the rotating body can be moved in the center direction of heat sink 264. The operation of the counterweight 90 is controlled by the control section 1A discussed later.
Referring again to fig. 1, the lid portion 14, the stage 24, the thermal insulating cylinder 26, the wafer boat 28, and the balance weight 90 are integrally loaded and unloaded into and from the processing container 4 by the elevating mechanism 30, which is, for example, a boat elevator.
A gas introduction pipe 82 for introducing a process gas into the process container 4 is provided on a side surface of the bottom flange 10. The gas introduction pipe 82 is connected to the gas introduction port 75 by a fixing member such as a joint 83. A through hole is formed in the flange of the outer tube 6 at a position corresponding to the gas inlet 75. The horizontal portion of the injector 60 is inserted into the through hole from the inside of the processing container 4, and the gas introduction pipe 82 and the injector 60 are connected and fixed by the joint 83.
The injector 60 supplies the process gas supplied to the gas inlet 75 to the wafer W through the gas inlet pipe 82. The injector 60 may be made of quartz, for example, or may be made of a ceramic such as SiC. The injector 60 may be formed using various materials, other than quartz and ceramics, which hardly contaminate the inside of the processing container 4.
The injector 60 has an upper end sealed, and a side surface of the injector 60 is provided with a plurality of gas supply holes 61 for supplying a process gas to a target surface of a plurality of wafers W accommodated in the process container 4 so as to be parallel to the target surface. That is, the gas supply holes 61 are provided at predetermined intervals in the vertical direction, and the wafer W is thermally processed while the process gas is supplied from the gas supply holes 61, so that the film is formed on the wafer W. Therefore, the gas supply hole 61 is provided on the side close to the wafer W.
In fig. 1, the case where 1 gas introduction pipe 82 is provided is shown, but the present invention is not limited to this, and a plurality of gas introduction pipes 82 may be provided according to the number of types of gases used, and the like. The gas introduced into the processing chamber 4 from the gas inlet 75 is supplied from the gas supply source 80 and is controlled by the flow control valve 81.
The substrate processing apparatus 1 may be provided with an activating member for activating the process gas supplied from the gas supply hole 61 by plasma generated by high-frequency power.
A gas outlet 36 is provided at the lower portion of the outer cylinder 6, and an exhaust system 38 is connected to the gas outlet 36. The exhaust system 38 includes an exhaust passage 40 connected to the gas outlet 36, and a pressure regulating valve 42 and a vacuum pump 44 connected to the exhaust passage 40 in this order. The gas can be exhausted while adjusting the pressure in the processing container 4 by the exhaust system 38.
A heater device 48 for heating a substrate such as a wafer W is provided on the outer peripheral side of the processing container 4 so as to surround the processing container 4.
Further, a slit 101 is formed in the vertical direction in the side wall of the inner cylinder 8 on the side facing the injector 60 with the wafer boat 28 interposed therebetween, and the gas in the inner cylinder 8 can be exhausted. That is, the process gas supplied from the gas supply hole 61 of the injector 60 toward the wafer W flows from the inner cylinder 8 to the space between the inner cylinder 8 and the outer cylinder 6 through the slit 101, and is exhausted from the gas outlet 36 to the outside of the process container 4.
The slit 101 is formed such that the upper end thereof is positioned above the uppermost wafer W among the wafers W held in the wafer boat 28. The slit 101 is formed such that the lower end thereof is positioned below the position of the wafer W held in the lowermost layer among the wafers W held in the wafer boat 28.
In fig. 1, the slit 101 is shown, but the slit is not limited to this, and may be a plurality of openings formed along the vertical direction of the processing container 4.
As shown in fig. 1, the substrate processing apparatus 1 is provided with a control unit 1A, for example, a computer, which controls the operations of the respective units of the substrate processing apparatus 1. The control unit 1A includes a program, a memory, a data processing unit including a CPU, and the like. Commands (steps) are incorporated in the program so that the control unit 1A transmits control signals to each unit of the substrate processing apparatus 1 to execute various processes. The program is stored in a medium 1C such as a flexible disk, an optical disk, a hard disk, a magneto-optical disk, and a memory card, is read into the storage unit 1B by a predetermined reading device, and is installed in the control unit 1A.
Further, the controller 1A controls the movement of the counterweight 90 along the radial direction of the wafer W. The controller 1A may control the operation of the counterweight 90 based on the number of wafers W held in the wafer boat 28, for example. Fig. 5 is a table showing a relationship between the number of wafers held in the wafer boat and the position of the weight. The control unit 1A controls the operation of the counterweight 90 based on the relationship (see fig. 5) between the number of wafers W held in the wafer boat 28 and the position of the counterweight 90, which is stored in the storage unit 1B in advance.
Further, the control unit 1A may control the operation of the counterweight 90 based on the eccentric amount detected by the detection unit 91 that detects the eccentric amount of the rotating body. The detection unit 91 may be a dial gauge, for example, as long as it can detect the eccentric amount of the rotating body.
(amount of eccentricity of rotating body)
Next, the eccentric amount of the rotating body will be described. Fig. 6 is a diagram for explaining the amount of eccentricity of the shaft center of the spin rotor. In fig. 6, the radial direction represents the eccentricity (mm) and the circumferential direction represents the angle (degrees). In fig. 6, a curve M indicates the eccentric amount of the rotating body when the rotating body is rotated in a state where a load is applied to the axial center of the rotating body, and a curve N indicates the eccentric amount of the rotating body when the rotating body is rotated in a state where a load is applied to a position shifted by 10mm from the axial center of the rotating body.
As shown in fig. 6, when a load is applied to a position offset from the axial center of the rotating body, the eccentric amount becomes larger than that when a load is applied to the axial center of the rotating body. As described above, when the eccentric amount of the rotating body increases, the wafer boat 28 rotates in an inclined state, and thus the inner surface of the processing container 4 (inner cylinder 8) and the wafer boat 28 easily come into contact with each other. Therefore, in order to prevent the contact between the inner surface of the process container 4 (inner cylinder 8) and the wafer boat 28, a sufficient gap S is provided between the inner surface of the process container 4 (inner cylinder 8) and the wafer boat 28 so that the contact therebetween is prevented (see fig. 1).
However, if the gap S between the inner surface of the processing container 4 (inner cylinder 8) and the wafer boat 28 becomes large, the amount of the process gas supplied to the central region of the wafer W decreases, and the in-plane uniformity of the substrate processing decreases.
As described above, the substrate processing apparatus according to the embodiment of the present invention includes the counterweight 90 for adjusting the position of the center of gravity of the rotating body rotating about the rotating shaft 20. This allows the center of gravity of the rotating body rotating about the rotating shaft 20 to be shifted toward the center of the rotating shaft 20. Therefore, the rotating body hardly eccentrically rotates, and thus the gap S between the inner surface of the process container 4 (inner cylinder 8) and the wafer boat 28 can be reduced. As a result, the supply amount of the process gas to the center region of the wafer W can be increased, and the in-plane uniformity of the substrate processing can be improved.
Further, since the rotating body hardly eccentrically rotates, the distance between the inner surface of the processing container 4 (inner cylinder 8) and the wafer boat 28 is substantially constant at any position in the height direction of the wafer boat 28. As a result, the inter-surface uniformity is improved. Further, since the time required for teaching the transfer mechanism for adjusting the transfer position of the wafer W in the horizontal direction can be shortened, the number of steps for debugging the apparatus can be reduced. Further, since the load applied to the magnetic fluid seal 18 is reduced, the life of the magnetic fluid seal 18 can be extended.
(examples)
In the examples, the effect of varying the horizontal position of the wafer W held by the wafer boat 28 on the in-plane uniformity of the film thickness of the film formed on the surface of the wafer W was evaluated. In the examples, a silicon nitride film was formed on the surface of the wafer W by an Atomic Layer Deposition (ALD) method using plasma, and the in-plane uniformity of the film thickness was measured.
Fig. 7 shows the evaluation results of the in-plane uniformity of the film thickness of the silicon nitride film formed on the surface of the wafer W when the horizontal position of the wafer W held by the wafer boat 28 is changed. Fig. 7 shows in-plane uniformity of the film thickness of the silicon nitride film formed on the surface of the wafer W when the horizontal position of the wafer W held by the wafer boat 28 is changed for each of the upper portion (hereinafter referred to as "TOP"), the central portion (hereinafter referred to as "CTR"), and the lower portion (hereinafter referred to as "BTM") of the wafer boat 28.
The horizontal position of the wafer W held by the wafer boat 28 is as follows.
Reference
TOP：RT＝0mm、FB＝0mm
CTR：RT＝0mm、FB＝0mm
BTM：RT＝0mm、FB＝0mm
TOP：RT＝-0.15mm、FB＝-1.0mm
CTR：RT＝-0.10mm、FB＝-1.0mm
BTM：RT＝-0.15mm、FB＝-1.0mm
Teaching 2
TOP：RT＝-0.15mm、FB＝-1.0mm
CTR：RT＝-0.25mm、FB＝-1.0mm
BTM：RT＝-0.10mm、FB＝-1.0mm
As shown in fig. 8, "RT" is a distance that the transfer mechanism for inserting the wafer W into the wafer boat 28 moves from the reference position in a clockwise direction, the clockwise direction being a positive direction, and the counterclockwise direction being a negative direction. As shown in fig. 8, "FB" is a distance by which the transfer mechanism moves from the reference position in a direction in which the wafer W is inserted (the + Y direction in fig. 8), the direction in which the wafer W is inserted is a positive direction, and the direction in which the wafer W is output is a negative direction. The reference position is a position at which the wafer W is held by the transfer mechanism before teaching.
As shown in fig. 7, in both of the teaching 1 and the teaching 2, the in-plane uniformity of the film thickness of the silicon nitride film formed on the wafer W is improved at any position of TOP, CTR, and BTM as compared with the reference. From the results, it was found that: by moving the position of the wafer W held by the wafer boat 28 toward the side of the wafer boat 28 into which the wafer W is inserted, the in-plane uniformity of the film thickness of the silicon nitride film formed on the surface of the wafer W can be improved.
Further, the amount of eccentricity can be adjusted by changing the horizontal position of the wafer W held by the wafer boat 28 in a manner that the center of gravity of the rotating body is virtually changed. Considering this, consider that: by adjusting the eccentric amount of the rotating body, the in-plane uniformity of the film thickness of the silicon nitride film formed on the surface of the wafer W can be controlled. In particular, it is believed that: by reducing the eccentricity of the rotating body, the in-plane uniformity of the film thickness of the silicon nitride film formed on the surface of the wafer W can be improved.
In the above-described embodiment, the stage 24 and the heat insulating cylinder 26 are an example of the support portion. The wafer boat 28 is an example of a substrate holder. The injector 60 is an example of a gas supply member. The weight 90 is an example of a center-of-gravity position adjusting member.
The present invention is not limited to the above embodiments, and various modifications and improvements can be made within the scope of the present invention.
In the above-described embodiment, a so-called ladder boat in which a plurality of support columns are provided between a top plate and a bottom plate which are arranged to face each other vertically, a plurality of groove portions are formed in the inner surface of each support column, and the peripheral edge portion of a wafer W is inserted into and supported by the groove portions has been described as an example. The present invention can be applied to a so-called ring boat in which a plurality of support columns are provided between a top plate and a bottom plate which are disposed to face each other vertically, a ring member having a flat support surface is provided on the plurality of support columns, and a wafer W is supported by the support surface of the ring member.
Claims (11)
1. A substrate processing apparatus includes:
a processing vessel;
a rotating shaft which is provided so as to be capable of penetrating through an opening of the processing container and extends in a vertical direction;
a support part provided at an upper end of the rotating shaft;
a substrate holder placed on the support portion, the substrate holder holding a plurality of substrates substantially horizontally with a predetermined interval therebetween in the vertical direction; and
a center-of-gravity position adjusting member that is disposed in a predetermined region of the support portion and adjusts a center-of-gravity position of a rotating body that rotates around the rotation axis and includes the support portion and the substrate holder,
wherein, the supporting part has a heat preservation section of thick bamboo, and this heat preservation section of thick bamboo includes: a top plate and a bottom plate which are arranged to face each other in the vertical direction; and a plurality of quartz heat sinks disposed between the top plate and the bottom plate,
the center of gravity position adjustment member is disposed on the bottom plate.
2. The substrate processing apparatus according to claim 1,
the predetermined region is a region of a part of the support portion in the circumferential direction.
3. The substrate processing apparatus according to claim 2,
the center of gravity position adjustment member has an arc shape when viewed from the top surface, the arc shape being along the peripheral edge of the support portion.
4. The substrate processing apparatus according to any one of claims 1 to 3,
the center of gravity position adjusting member is movable in a radial direction of the base plate.
5. The substrate processing apparatus according to claim 4,
the substrate processing apparatus includes a control unit that controls the operation of the center-of-gravity position adjustment member.
6. The substrate processing apparatus according to claim 5,
the control unit controls the operation of the center-of-gravity position adjustment member based on the number of substrates held by the substrate holder.
7. The substrate processing apparatus according to claim 5,
the control unit controls the operation of the center-of-gravity position adjustment member based on the amount of eccentricity of the rotating body.
8. The substrate processing apparatus according to any one of claims 1 to 3,
the center-of-gravity position adjustment member is formed of quartz.
9. The substrate processing apparatus according to any one of claims 1 to 3,
the substrate processing apparatus includes a gas supply unit configured to supply a process gas to surfaces to be processed of the plurality of substrates so as to be parallel to the surfaces to be processed of the plurality of substrates.
10. The substrate processing apparatus according to any one of claims 1 to 3,
the substrate holding jig is a ladder boat.
11. The substrate processing apparatus according to any one of claims 1 to 3,
the substrate holder is an annular boat.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016226009A JP6758163B2 (en) | 2016-11-21 | 2016-11-21 | Board processing equipment |
| JP2016-226009 | 2016-11-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108091598A CN108091598A (en) | 2018-05-29 |
| CN108091598B true CN108091598B (en) | 2023-03-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711162642.1A Active CN108091598B (en) | 2016-11-21 | 2017-11-21 | Substrate processing apparatus |
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| Country | Link |
|---|---|
| JP (1) | JP6758163B2 (en) |
| KR (1) | KR102205381B1 (en) |
| CN (1) | CN108091598B (en) |
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| JP7224254B2 (en) * | 2019-07-17 | 2023-02-17 | 東京エレクトロン株式会社 | SUBSTRATE PROCESSING APPARATUS, INFORMATION PROCESSING APPARATUS, AND SUBSTRATE PROCESSING METHOD |
| CN113322450A (en) * | 2021-08-02 | 2021-08-31 | 杭州盾源聚芯半导体科技有限公司 | Silicon boat for high-temperature vapor deposition |
| CN117690835A (en) * | 2023-10-30 | 2024-03-12 | 浙江浩鑫半导体材料有限公司 | Quartz boat support for photovoltaic semiconductor production |
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| JP6758163B2 (en) | 2020-09-23 |
| JP2018085371A (en) | 2018-05-31 |
| KR20180057536A (en) | 2018-05-30 |
| CN108091598A (en) | 2018-05-29 |
| KR102205381B1 (en) | 2021-01-19 |
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