JP2018073995A - 半導体装置、および半導体装置の作製方法 - Google Patents

半導体装置、および半導体装置の作製方法 Download PDF

Info

Publication number
JP2018073995A
JP2018073995A JP2016212174A JP2016212174A JP2018073995A JP 2018073995 A JP2018073995 A JP 2018073995A JP 2016212174 A JP2016212174 A JP 2016212174A JP 2016212174 A JP2016212174 A JP 2016212174A JP 2018073995 A JP2018073995 A JP 2018073995A
Authority
JP
Japan
Prior art keywords
insulator
oxide
conductor
transistor
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2016212174A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018073995A5 (https=
Inventor
克明 栃林
Katsuaki Tochibayashi
克明 栃林
大吾 伊藤
Daigo Ito
大吾 伊藤
慎也 笹川
Shinya Sasagawa
慎也 笹川
山崎　舜平
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2016212174A priority Critical patent/JP2018073995A/ja
Publication of JP2018073995A publication Critical patent/JP2018073995A/ja
Publication of JP2018073995A5 publication Critical patent/JP2018073995A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
JP2016212174A 2016-10-28 2016-10-28 半導体装置、および半導体装置の作製方法 Withdrawn JP2018073995A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2016212174A JP2018073995A (ja) 2016-10-28 2016-10-28 半導体装置、および半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016212174A JP2018073995A (ja) 2016-10-28 2016-10-28 半導体装置、および半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2018073995A true JP2018073995A (ja) 2018-05-10
JP2018073995A5 JP2018073995A5 (https=) 2019-12-05

Family

ID=62114444

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016212174A Withdrawn JP2018073995A (ja) 2016-10-28 2016-10-28 半導体装置、および半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP2018073995A (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019077451A1 (ja) * 2017-10-20 2019-04-25 株式会社半導体エネルギー研究所 半導体装置
US10388796B2 (en) 2016-12-09 2019-08-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2020021383A1 (ja) * 2018-07-27 2020-01-30 株式会社半導体エネルギー研究所 半導体装置
US12105163B2 (en) 2021-09-21 2024-10-01 Tdk Corporation Magnetic sensor

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10388796B2 (en) 2016-12-09 2019-08-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2019077451A1 (ja) * 2017-10-20 2019-04-25 株式会社半導体エネルギー研究所 半導体装置
JPWO2019077451A1 (ja) * 2017-10-20 2020-11-05 株式会社半導体エネルギー研究所 半導体装置
JP7282684B2 (ja) 2017-10-20 2023-05-29 株式会社半導体エネルギー研究所 半導体装置
WO2020021383A1 (ja) * 2018-07-27 2020-01-30 株式会社半導体エネルギー研究所 半導体装置
JPWO2020021383A1 (ja) * 2018-07-27 2021-08-12 株式会社半導体エネルギー研究所 半導体装置
JP2023086839A (ja) * 2018-07-27 2023-06-22 株式会社半導体エネルギー研究所 半導体装置
US11804551B2 (en) 2018-07-27 2023-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US12068417B2 (en) 2018-07-27 2024-08-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US12105163B2 (en) 2021-09-21 2024-10-01 Tdk Corporation Magnetic sensor

Similar Documents

Publication Publication Date Title
US10727356B2 (en) Semiconductor device and manufacturing method thereof
US10777687B2 (en) Semiconductor device
JP2018098505A (ja) 半導体装置、および半導体装置の作製方法
JP7482947B2 (ja) 半導体装置
TWI741096B (zh) 半導體裝置以及半導體裝置的製造方法
US10236357B2 (en) Semiconductor device and manufacturing method of the same
JP6999325B2 (ja) 半導体装置
JP7019346B2 (ja) 半導体装置
JP2018011053A (ja) 半導体装置、及び半導体装置の作製方法
KR20180000296A (ko) 반도체 장치
JP2018067708A (ja) 半導体装置およびその作製方法
JP2018073995A (ja) 半導体装置、および半導体装置の作製方法
JPWO2019016642A1 (ja) 半導体装置、および半導体装置の作製方法
JP7089645B2 (ja) 半導体装置及び情報端末
JP2018073994A (ja) 半導体装置
JP2018085503A (ja) トランジスタ、半導体装置および電子機器
WO2018092007A1 (ja) 半導体装置、および半導体装置の作製方法
JP2018064090A (ja) 半導体装置、および半導体装置の作製方法
JP2018078227A (ja) 半導体装置、および半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20191024

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20191024

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20200915

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20200930