JP2018073637A - 加熱装置 - Google Patents
加熱装置 Download PDFInfo
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- JP2018073637A JP2018073637A JP2016212349A JP2016212349A JP2018073637A JP 2018073637 A JP2018073637 A JP 2018073637A JP 2016212349 A JP2016212349 A JP 2016212349A JP 2016212349 A JP2016212349 A JP 2016212349A JP 2018073637 A JP2018073637 A JP 2018073637A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B25/00—Annealing glass products
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
- F28D21/00—Heat-exchange apparatus not covered by any of the groups F28D1/00 - F28D20/00
- F28D2021/0019—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for
- F28D2021/0077—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for for tempering, e.g. with cooling or heating circuits for temperature control of elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Abstract
【解決手段】ウェハWが載置される載置面2a及び載置面2aとは反対の裏面2bを有する基体2と、基体2に埋設される発熱抵抗体4と、基体2の裏面2bに接続された一方の端面3a及び一方の端面3aとは反対の他方の端面3bを有する筒状支持体3と、筒状支持体3の他方の端面3bから一方の端面3aに向かう方向に延びる部分を含んで筒状支持体3の周壁内に形成された支持体側流路5と、を備え、支持体側流路5は、筒状支持体3の外周面3cよりも内側で開口する開口部6を備える。
【選択図】図1
Description
基板が載置される載置面及び前記載置面とは反対の裏面を有する基体と、
前記基体に埋設される発熱抵抗体と、
前記基体の前記裏面に接続された一方の端面及び前記一方の端面とは反対の他方の端面を有する筒状支持体と、
前記筒状支持体の他方の端面から前記一方の端面に向かう方向に延びる部分を含んで前記筒状支持体の周壁内に形成された支持体側流路と、
を備え、
少なくとも前記支持体側流路を含む流路は、前記筒状支持体の外周面よりも内側で開口し、前記筒状支持体の内周面と前記基体の裏面とが画成する空間と連通する開口部を備えることを特徴とする。
図を参照して、本発明の第1実施形態の加熱装置を説明する。図1に示すように、第1実施形態の加熱装置1は、基体2と、筒状支持体3とを備える。基体2は、基板としてのウェハWが載置される載置面2aと、載置面2aとは反対の裏面2bとを備える。筒状支持体3は、一方の端面3aと他方の端面3bと平滑な外周面3cとを有する円筒形状で構成されている。なお、筒状支持体3を角筒形状としてもよい。
図3を参照して、本発明の第2実施形態の加熱装置1を説明する。なお、第1実施形態と同一の構成については同一の符号を付して説明を省略する。第2実施形態の加熱装置1は、その基体2の裏面2bに溝部11が設けられている点で第1実施形態のものと構成が相違する。
図4,5を参照して、本発明の第3実施形態の加熱装置1を説明する。なお、第1実施形態と同一の構成については同一の符号を付して説明を省略する。第3実施形態の支持体側流路5は、一方の端面3a側に位置させて、筒状支持体の周方向に延びる周方向流路12を備えている。そして、開口部6は、周方向流路12と連通させて複数設けられている。他の構成は、第1実施形態のものと全て同一に構成されている。
2 基体
2a 載置面
2b 裏面
3 筒状支持体
3a 一方の端面
3b 他方の端面
3c 外周面
4 発熱抵抗体
5 支持体側流路
6 開口部
8 開口端
9 開口端
10 配線
11 溝部
12 周方向流路
W ウェハ(基板)
P 流体制御部
Claims (5)
- 基板が載置される載置面及び前記載置面とは反対の裏面を有する基体と、
前記基体に埋設される発熱抵抗体と、
前記基体の前記裏面に接続された一方の端面及び前記一方の端面とは反対の他方の端面を有する筒状支持体と、
前記筒状支持体の他方の端面から前記一方の端面に向かう方向に延びる部分を含んで前記筒状支持体の周壁内に形成された支持体側流路と、
を備え、
少なくとも前記支持体側流路を含む流路は、前記筒状支持体の外周面よりも内側で開口し、前記筒状支持体の内周面と前記基体の裏面とが画成する空間と連通する開口部を備えることを特徴とする加熱装置。 - 請求項1記載の加熱装置であって、
前記開口部は、少なくとも前記筒状支持体の内周面に形成されていることを特徴とする加熱装置。 - 請求項2記載の加熱装置であって、
前記支持体側流路は、前記筒状支持体の周方向に延びる周方向流路を備え、
前記開口部は、前記周方向流路と連通させて複数設けられていることを特徴とする加熱装置。 - 請求項1から請求項3の何れか1項に記載の加熱装置であって、
前記基体の裏面には、前記支持体側流路と連通し、且つ前記筒状支持体の径方向中央側に延びる溝部が形成され、
前記溝部により形成される前記流路の部分が前記開口部を備えていることを特徴とする加熱装置。 - 請求項1から請求項4の何れか1項に記載の加熱装置であって、
前記支持体側流路に流体を供給する、又は前記支持体側流路から流体を吸引する流体制御部を備えることを特徴とする加熱装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2016212349A JP6704836B2 (ja) | 2016-10-28 | 2016-10-28 | 加熱装置 |
US15/793,268 US10957562B2 (en) | 2016-10-28 | 2017-10-25 | Heating device |
Applications Claiming Priority (1)
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---|---|---|---|
JP2016212349A JP6704836B2 (ja) | 2016-10-28 | 2016-10-28 | 加熱装置 |
Publications (2)
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JP2018073637A true JP2018073637A (ja) | 2018-05-10 |
JP6704836B2 JP6704836B2 (ja) | 2020-06-03 |
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JP2016212349A Active JP6704836B2 (ja) | 2016-10-28 | 2016-10-28 | 加熱装置 |
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US (1) | US10957562B2 (ja) |
JP (1) | JP6704836B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220008403A (ko) * | 2020-07-13 | 2022-01-21 | (주)티티에스 | 챔버 게이트의 오픈시에 바깥쪽 영역의 온도를 보상하는 서셉터 |
Citations (6)
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JP2001068538A (ja) * | 1999-06-21 | 2001-03-16 | Tokyo Electron Ltd | 電極構造、載置台構造、プラズマ処理装置及び処理装置 |
JP2012252790A (ja) * | 2011-05-31 | 2012-12-20 | Nhk Spring Co Ltd | シャフト付きヒータユニットおよびシャフト付きヒータユニットの製造方法 |
JP2013514669A (ja) * | 2009-12-18 | 2013-04-25 | アプライド マテリアルズ インコーポレイテッド | 広範囲ウエハ温度制御のための多機能ヒータ/冷却装置ペデスタル |
JP2013161522A (ja) * | 2012-02-01 | 2013-08-19 | Ngk Insulators Ltd | セラミックヒータ |
US20150064921A1 (en) * | 2013-08-30 | 2015-03-05 | Applied Materials, Inc. | Low temperature plasma anneal process for sublimative etch processes |
JP2016508676A (ja) * | 2013-02-28 | 2016-03-22 | ワトロー エレクトリック マニュファクチュアリング カンパニー | 低熱膨張係数の上部を備えたワーク受台構造 |
Family Cites Families (3)
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DE69432383D1 (de) * | 1993-05-27 | 2003-05-08 | Applied Materials Inc | Verbesserungen betreffend Substrathalter geeignet für den Gebrauch in Vorrichtungen für die chemische Abscheidung aus der Dampfphase |
US8753447B2 (en) * | 2009-06-10 | 2014-06-17 | Novellus Systems, Inc. | Heat shield for heater in semiconductor processing apparatus |
JP5980147B2 (ja) | 2013-03-08 | 2016-08-31 | 日本発條株式会社 | 基板支持装置 |
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2016
- 2016-10-28 JP JP2016212349A patent/JP6704836B2/ja active Active
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2017
- 2017-10-25 US US15/793,268 patent/US10957562B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001068538A (ja) * | 1999-06-21 | 2001-03-16 | Tokyo Electron Ltd | 電極構造、載置台構造、プラズマ処理装置及び処理装置 |
JP2013514669A (ja) * | 2009-12-18 | 2013-04-25 | アプライド マテリアルズ インコーポレイテッド | 広範囲ウエハ温度制御のための多機能ヒータ/冷却装置ペデスタル |
JP2012252790A (ja) * | 2011-05-31 | 2012-12-20 | Nhk Spring Co Ltd | シャフト付きヒータユニットおよびシャフト付きヒータユニットの製造方法 |
JP2013161522A (ja) * | 2012-02-01 | 2013-08-19 | Ngk Insulators Ltd | セラミックヒータ |
JP2016508676A (ja) * | 2013-02-28 | 2016-03-22 | ワトロー エレクトリック マニュファクチュアリング カンパニー | 低熱膨張係数の上部を備えたワーク受台構造 |
US20150064921A1 (en) * | 2013-08-30 | 2015-03-05 | Applied Materials, Inc. | Low temperature plasma anneal process for sublimative etch processes |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220008403A (ko) * | 2020-07-13 | 2022-01-21 | (주)티티에스 | 챔버 게이트의 오픈시에 바깥쪽 영역의 온도를 보상하는 서셉터 |
KR102356878B1 (ko) * | 2020-07-13 | 2022-02-08 | (주)티티에스 | 챔버 게이트의 오픈시에 바깥쪽 영역의 온도를 보상하는 서셉터 |
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Publication number | Publication date |
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JP6704836B2 (ja) | 2020-06-03 |
US20180122658A1 (en) | 2018-05-03 |
US10957562B2 (en) | 2021-03-23 |
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