JP2018056171A - 基板処理装置、搬送方法およびサセプタ - Google Patents
基板処理装置、搬送方法およびサセプタ Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Abstract
Description
本実施形態による基板搬送方法は、処理チャンバ内で中心部に開口を有する第1部材と開口を覆う第2部材とを含み支持部により支持されたサセプタ上に載置されて処理される基板を搬送する搬送方法であって、支持部内に配置されたリフト部に対して第1位相となるようにサセプタを処理チャンバ内に搬入し、リフト部を上昇させることにより、サセプタをリフト部に載置し、リフト部を下降させることによりサセプタを支持部に載置し、リフト部に対して第1位相と異なる第2位相となるように基板を処理チャンバ内に搬入し、リフト部とともに第2部材を上昇させることにより、基板を第2部材上に載置し、リフト部を下降させることにより基板および第2部材を第1部材に載置する。
図1は、第1実施形態における基板処理装置の一例である成膜装置(以下単に、装置ともいう)の構成の一例を示す概略平面図である。
まず、ロードロック室140内に基板Wをセットする(S10)。基板Wのセットは、図示しない他のロボットアームが行ってもよく、あるいは、オペレータが行ってもよい。次に、ロードロック室140を真空引きし、搬送圧力にする(S20)。
成膜チャンバ110からロードロック室140へ基板Wを搬出する際には、コントローラ170は、リフト部113の突起部113aが図5(A)に示す第2円弧C2の下にあるように支持部111を回転制御する(S90)。
サセプタ150はサセプタ室130に配置されており、サセプタ室130から成膜チャンバ110内へ搬入される。
成膜チャンバ110からサセプタ室130へサセプタ150を搬出する際には、コントローラ170は、リフト部113の突起部113aが図5(B)に示す第1円弧C1の下にあるように支持部111を回転制御する(S91)。
図12(A)および図12(B)は、第2実施形態に従ったサセプタ150、および、リフト部113の突起部113aの位置を示す平面図である。第2実施形態によるサセプタ150は、第1部材151の開口OPおよび第2部材152の形状において第1実施形態と異なる。第2実施形態のその他の構成は、第1実施形態の対応する構成と同様でよい。
Claims (5)
- 処理チャンバと、
前記処理チャンバ内において前記基板を支持可能なサセプタであって、中心部に開口を有する第1部材と前記開口を覆う第2部材とを含むサセプタと、
前記処理チャンバ内において上部で前記サセプタを支持し前記サセプタを回転させる支持部と、
前記支持部内に設けられ、前記第1部材及び前記第2部材の少なくともいずれかを昇降可能なリフト部とを備え、
前記支持部は、前記サセプタが前記リフト部に対して所定の位相となるように回転させることができ、前記リフト部を上昇したとき、前記サセプタが第1位相で前記第1部材と接触し、前記サセプタが前記第1位相と異なる第2位相で前記第2部材と接触する、基板処理装置。 - 前記サセプタが前記第1位相のときに、前記リフト部により、前記第1部材、または、前記第1部材および第2部材が昇降され、
前記サセプタが前記第2位相のときに、前記リフト部により、前記第2部材が昇降される、請求項1に記載の基板処理装置。 - 前記リフト部は、前記サセプタの基板搭載面に対して略垂直方向に延伸し、前記サセプタの回転中心を中心とする回転対称に設けられる複数の突起部を含み、
前記複数の突起部を前記略垂直方向に移動させることによって、前記第1部材および第2部材の少なくともいずれかを前記複数の突起部で持ち上げる、請求項1または請求項2に記載の基板処理装置。 - 処理チャンバ内で中心部に開口を有する第1部材と前記開口を覆う第2部材とを含み支持部により支持されたサセプタ上に載置されて処理される基板を搬送する搬送方法であって、
前記支持部内に配置されたリフト部に対して第1位相となるように前記サセプタを前記処理チャンバ内に搬入し、前記リフト部を上昇させることにより、前記サセプタを前記リフト部に載置し、前記リフト部を下降させることにより前記サセプタを前記支持部に載置し、
前記リフト部に対して前記第1位相と異なる第2位相となるように、前記基板を前記処理チャンバ内に搬入し、前記リフト部とともに第2部材を上昇させることにより、前記基板を前記第2部材上に載置し、前記リフト部を下降させることにより前記基板および前記第2部材を前記第1部材に載置する、搬送方法。 - 処理チャンバ内において基板を支持可能なサセプタであって、
中心部に開口を有する第1部材と、
前記開口を覆う第2部材とを備え、
前記サセプタの回転中心を中心とする所定径の円が、第1位相で前記第1部材と重複し、前記第1位相と異なる第2位相で前記第2部材と重複する、サセプタ。
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US15/714,511 US10157768B2 (en) | 2016-09-26 | 2017-09-25 | Substrate processing apparatus, transfer method, and susceptor |
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US10541117B2 (en) * | 2015-10-29 | 2020-01-21 | Lam Research Corporation | Systems and methods for tilting a wafer for achieving deposition uniformity |
JP6618876B2 (ja) * | 2016-09-26 | 2019-12-11 | 株式会社ニューフレアテクノロジー | 基板処理装置、搬送方法およびサセプタ |
TWI758595B (zh) * | 2018-03-31 | 2022-03-21 | 日商平田機工股份有限公司 | 腔室構造 |
CN108754458B (zh) * | 2018-05-23 | 2020-10-16 | 上海华力微电子有限公司 | 一种化学气相淀积机台及处理机台报警的方法 |
CN113539914B (zh) * | 2021-06-28 | 2023-06-20 | 北京北方华创微电子装备有限公司 | 半导体工艺设备及其晶圆传输系统 |
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