JP2018022853A - 炭化珪素半導体基板および炭化珪素半導体基板の製造方法 - Google Patents
炭化珪素半導体基板および炭化珪素半導体基板の製造方法 Download PDFInfo
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 92
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 90
- 239000000758 substrate Substances 0.000 title claims abstract description 89
- 239000004065 semiconductor Substances 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000012535 impurity Substances 0.000 claims abstract description 55
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 135
- 239000007789 gas Substances 0.000 claims description 74
- 229910052757 nitrogen Inorganic materials 0.000 claims description 69
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 61
- 229910052796 boron Inorganic materials 0.000 claims description 61
- 239000002019 doping agent Substances 0.000 claims description 44
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 14
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 4
- 239000000370 acceptor Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 description 67
- 239000013078 crystal Substances 0.000 description 25
- 230000008021 deposition Effects 0.000 description 24
- 239000001257 hydrogen Substances 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 239000012159 carrier gas Substances 0.000 description 7
- 150000002431 hydrogen Chemical class 0.000 description 7
- 239000012895 dilution Substances 0.000 description 5
- 238000010790 dilution Methods 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- -1 Sulfuric Acid Peroxide Chemical class 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
図1は、実施の形態にかかる炭化珪素半導体基板の構成を示す断面図である。図1に示すように、実施の形態にかかる炭化珪素半導体基板は、n型炭化珪素基板(単結晶炭化珪素基板)1の第1主面(おもて面)、例えば(0001)面(Si面)に、n-型エピタキシャル層(エピタキシャル層)2が堆積されている。
次に、実施の形態にかかる炭化珪素半導体基板の製造方法について説明する。図2は、実施の形態にかかる炭化珪素半導体基板の形成工程のフローチャートである。また、図3は、実施の形態にかかる炭化珪素半導体基板におけるドーパント時の不純物濃度とエピ成膜の不純物濃度との対応関係を示すグラフである。図3において、縦軸は、炭化珪素半導体基板上に形成されたエピ成膜の窒素またはホウ素の濃度であり、単位は/cm3であり、横軸は、ドーパントガス内の窒素またはホウ素の流量であり、単位はsccmまたはslmである。
・条件1:点34におけるエピ成膜の窒素の濃度d1および点38におけるエピ成膜のホウ素の濃度d2は、エピタキシャル成長装置内の不純物による影響を受けない不純物濃度以上である。具体的には、点34におけるエピ成膜の窒素の濃度d1および点38におけるエピ成膜のホウ素の濃度d2は、1×1015/cm3以上である。
・条件2:点34におけるエピ成膜の窒素の濃度d1と点38におけるエピ成膜のホウ素の濃度d2との差(d1−d2)が、1×1014/cm3〜1×1015/cm3の範囲内にある。決定された点34からエピタキシャル成長をする際の窒素の流量nが決定され、決定された点38からエピタキシャル成長をする際のホウ素の流量bが決定される。
本実施例では、厚さ365μm、直径100mmのn型単結晶4H−SiC(四層周期六方晶の炭化珪素)基板のSi面上に、設定濃度4×1014/cm3、設定膜厚100μmのn-型エピタキシャル層のエピタキシャル成長を行った。
2 n-型エピタキシャル層
4 エピタキシャル成長装置
41 サセプタ
42 半導体基板
43 ガス導入口
44 ガス排出口
45 断熱材
Claims (7)
- ドナーの濃度とアクセプターの濃度が、エピタキシャル成長装置内の不純物による影響を受けない濃度以上であり、前記ドナーの濃度と前記アクセプターの濃度との差が、1×1014/cm3〜1×1015/cm3の範囲内にあるエピタキシャル層を、
備えることを特徴とする炭化珪素半導体基板。 - 前記ドナーは窒素であり、前記アクセプターはホウ素であることを特徴とする請求項1に記載の炭化珪素半導体基板。
- 前記不純物による影響を受けない濃度は、1×1015/cm3以上であることを特徴とする請求項1または2に記載の炭化珪素半導体基板。
- ドナーとアクセプターを含むドーパントガスを供給して単結晶炭化珪素基板に単結晶炭化珪素の膜をエピタキシャル成長により形成する形成工程を
含み、前記ドーパントガス内のドナーとアクセプターの流量は、前記膜のドナーの濃度と前記膜のアクセプターの濃度を、エピタキシャル成長装置内の不純物による影響を受けない濃度以上にする流量であり、かつ、前記膜のドナーの濃度と前記膜のアクセプターの濃度との差を、1×1014/cm3〜1×1015/cm3の範囲内にする流量であることを特徴とする炭化珪素半導体基板の製造方法。 - 前記形成工程より前に、
前記ドナーを含むドーパントガスを供給して単結晶炭化珪素基板に単結晶炭化珪素の膜をエピタキシャル成長させ、前記ドーパントガス内の流量と前記膜のドナーの濃度との関係を求める第1工程と、
前記アクセプターを含むドーパントガスを供給して単結晶炭化珪素基板に単結晶炭化珪素の膜をエピタキシャル成長させ、前記ドーパントガスの流量と前記膜のアクセプターの濃度との関係を求める第2工程と、
前記第1工程で求めた関係と前記第2工程で求めた関係とに基づいて、前記ドーパントガスの流量を決定する第3工程と、
をさらに含むことを特徴とする請求項4に記載の炭化珪素半導体基板の製造方法。 - 前記ドナーは窒素であり、前記アクセプターはホウ素であることを特徴とする請求項4または5に記載の炭化珪素半導体基板の製造方法。
- 前記不純物による影響を受けない濃度は、1×1015/cm3以上であることを特徴とする請求項4〜6のいずれか一つに記載の炭化珪素半導体基板の製造方法。
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WO2020144900A1 (ja) * | 2019-01-08 | 2020-07-16 | 住友電気工業株式会社 | 炭化珪素再生基板および炭化珪素半導体装置の製造方法 |
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JP2009277757A (ja) * | 2008-05-13 | 2009-11-26 | Denso Corp | 半導体装置の製造方法 |
JP2014185048A (ja) * | 2013-03-22 | 2014-10-02 | Toshiba Corp | SiCエピタキシャルウェハおよび半導体装置 |
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WO2020115950A1 (ja) * | 2018-12-05 | 2020-06-11 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板の製造方法 |
JPWO2020115950A1 (ja) * | 2018-12-05 | 2021-10-28 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板の製造方法 |
US11373868B2 (en) | 2018-12-05 | 2022-06-28 | Sumitomo Electric Industries, Ltd. | Method for manufacturing silicon carbide epitaxial substrate |
JP7251553B2 (ja) | 2018-12-05 | 2023-04-04 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板の製造方法 |
WO2020144900A1 (ja) * | 2019-01-08 | 2020-07-16 | 住友電気工業株式会社 | 炭化珪素再生基板および炭化珪素半導体装置の製造方法 |
US11862684B2 (en) | 2019-01-08 | 2024-01-02 | Sumitomo Electric Industries, Ltd. | Recycle wafer of silicon carbide and method for manufacturing silicon carbide semiconductor device |
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US20200219723A1 (en) | 2020-07-09 |
US11158503B2 (en) | 2021-10-26 |
JP6786939B2 (ja) | 2020-11-18 |
US10615031B2 (en) | 2020-04-07 |
US20180040480A1 (en) | 2018-02-08 |
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