JP2018019082A - 単層膜が媒介する高精度の膜堆積 - Google Patents
単層膜が媒介する高精度の膜堆積 Download PDFInfo
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- 230000008021 deposition Effects 0.000 title abstract description 14
- 230000001404 mediated effect Effects 0.000 title abstract description 3
- 239000002356 single layer Substances 0.000 title abstract description 3
- 239000010408 film Substances 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 16
- 238000001179 sorption measurement Methods 0.000 claims abstract description 16
- 239000002243 precursor Substances 0.000 claims abstract description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 11
- 239000010409 thin film Substances 0.000 claims abstract description 10
- 230000004907 flux Effects 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 3
- 229910018540 Si C Inorganic materials 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 238000010926 purge Methods 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000010849 ion bombardment Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 6
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011368 organic material Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical class [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000007833 carbon precursor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000012686 silicon precursor Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
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Abstract
Description
本出願は、2016年7月25日に出願された米国仮特許出願第62/366,516号明細書(この内容全体が参照により本明細書に援用される)に関連し、それに対する優先権を主張する。
Claims (12)
- 薄膜を形成する方法であって、
基板上の露出した表面の少なくとも一部を、前記露出した表面の官能性を変化させ、かつ有機前駆体のその後の吸着を引き起こすために、吸着促進剤で処理する、処理ステップと;
その後、官能化した前記表面に前記有機前駆体を吸着させるステップであって、炭素含有膜を形成する、吸着ステップと;
前記炭素含有膜の表面の少なくとも一部をイオン流束に曝露するステップであって、前記吸着された炭素含有膜を下にある前記基板の材料と混合し、かつ混合膜を形成する、曝露ステップと
を含む方法。 - 前記基板がシリコン、ゲルマニウム、またはシリコン−ゲルマニウム合金を含む、請求項1に記載の方法。
- 前記吸着促進剤がアンモニア系プラズマを用いて形成されるNH2である、請求項1に記載の方法。
- 前記表面を前記吸着促進剤で処理する、処理ステップの前に、前記基板の前記表面を前処理荷電粒子流束で前処理するステップをさらに含む、請求項1に記載の方法。
- 前記前処理荷電粒子流束が不活性ガスプラズマからのイオン流束を含む、請求項4に記載の方法。
- 前記有機前駆体が−CH含有前駆体を含む、請求項1に記載の方法。
- 前記混合膜がSi−C含有膜を含む、請求項1に記載の方法。
- 前記基板を前記吸着促進剤で処理する、処理ステップの前に、前記基板の前記表面上にSi含有前駆体を吸着させるステップをさらに含む、請求項1に記載の方法。
- 前記混合膜をアニールするステップをさらに含む、請求項1に記載の方法。
- 前記混合膜の前記形成の後、前記基板の前記表面上にSi含有前駆体を吸着させるステップをさらに含む、請求項1に記載の方法。
- 多層混合膜を形成するために前記処理ステップ、吸着ステップおよび曝露ステップを繰り返すステップをさらに含む、請求項10に記載の方法。
- 前記処理ステップの後および前記吸着ステップの前に環境をパージするステップをさらに含む、請求項1に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662366516P | 2016-07-25 | 2016-07-25 | |
US62/366,516 | 2016-07-25 |
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JP2018019082A true JP2018019082A (ja) | 2018-02-01 |
JP6431962B2 JP6431962B2 (ja) | 2018-11-28 |
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JP2017142511A Active JP6431962B2 (ja) | 2016-07-25 | 2017-07-24 | 単層膜が媒介する高精度の膜堆積 |
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US (1) | US10340137B2 (ja) |
JP (1) | JP6431962B2 (ja) |
KR (1) | KR101991477B1 (ja) |
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US10340137B2 (en) * | 2016-07-25 | 2019-07-02 | Tokyo Electron Limited | Monolayer film mediated precision film deposition |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000303174A (ja) * | 1999-04-16 | 2000-10-31 | Agency Of Ind Science & Technol | 炭化ケイ素膜の形成方法 |
US20030003635A1 (en) * | 2001-05-23 | 2003-01-02 | Paranjpe Ajit P. | Atomic layer deposition for fabricating thin films |
JP2003073806A (ja) * | 2001-09-07 | 2003-03-12 | National Institute Of Advanced Industrial & Technology | SiC薄膜の形成方法 |
WO2006134930A1 (ja) * | 2005-06-13 | 2006-12-21 | Hitachi Kokusai Electric Inc. | 半導体装置の製造方法、及び基板処理装置 |
JP2007516599A (ja) * | 2003-08-04 | 2007-06-21 | エーエスエム アメリカ インコーポレイテッド | ゲルマニウム上の堆積前の表面調製 |
JP2010028124A (ja) * | 2004-03-25 | 2010-02-04 | Japan Science & Technology Agency | 有機材料含有デバイスに適した基板の製造方法、および有機材料含有デバイスの製造方法 |
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JP2000303174A (ja) * | 1999-04-16 | 2000-10-31 | Agency Of Ind Science & Technol | 炭化ケイ素膜の形成方法 |
US20030003635A1 (en) * | 2001-05-23 | 2003-01-02 | Paranjpe Ajit P. | Atomic layer deposition for fabricating thin films |
JP2003073806A (ja) * | 2001-09-07 | 2003-03-12 | National Institute Of Advanced Industrial & Technology | SiC薄膜の形成方法 |
JP2007516599A (ja) * | 2003-08-04 | 2007-06-21 | エーエスエム アメリカ インコーポレイテッド | ゲルマニウム上の堆積前の表面調製 |
JP2010028124A (ja) * | 2004-03-25 | 2010-02-04 | Japan Science & Technology Agency | 有機材料含有デバイスに適した基板の製造方法、および有機材料含有デバイスの製造方法 |
WO2006134930A1 (ja) * | 2005-06-13 | 2006-12-21 | Hitachi Kokusai Electric Inc. | 半導体装置の製造方法、及び基板処理装置 |
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