JP2018011032A - 流路構造及び処理装置 - Google Patents

流路構造及び処理装置 Download PDF

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Publication number
JP2018011032A
JP2018011032A JP2016140831A JP2016140831A JP2018011032A JP 2018011032 A JP2018011032 A JP 2018011032A JP 2016140831 A JP2016140831 A JP 2016140831A JP 2016140831 A JP2016140831 A JP 2016140831A JP 2018011032 A JP2018011032 A JP 2018011032A
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JP
Japan
Prior art keywords
passages
passage
opening
gas
shower plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016140831A
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English (en)
Japanese (ja)
Inventor
視紅磨 加藤
Shiguma Kato
視紅磨 加藤
貴洋 寺田
Takahiro Terada
貴洋 寺田
真也 東
Shinya Azuma
真也 東
田中　正幸
Masayuki Tanaka
正幸 田中
香織 出浦
Kaori Deura
香織 出浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2016140831A priority Critical patent/JP2018011032A/ja
Priority to PCT/JP2017/023421 priority patent/WO2018012267A1/ja
Priority to TW106123024A priority patent/TW201805478A/zh
Publication of JP2018011032A publication Critical patent/JP2018011032A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
JP2016140831A 2016-07-15 2016-07-15 流路構造及び処理装置 Pending JP2018011032A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016140831A JP2018011032A (ja) 2016-07-15 2016-07-15 流路構造及び処理装置
PCT/JP2017/023421 WO2018012267A1 (ja) 2016-07-15 2017-06-26 流路構造及び処理装置
TW106123024A TW201805478A (zh) 2016-07-15 2017-07-10 流路構造及處理裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016140831A JP2018011032A (ja) 2016-07-15 2016-07-15 流路構造及び処理装置

Publications (1)

Publication Number Publication Date
JP2018011032A true JP2018011032A (ja) 2018-01-18

Family

ID=60952423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016140831A Pending JP2018011032A (ja) 2016-07-15 2016-07-15 流路構造及び処理装置

Country Status (3)

Country Link
JP (1) JP2018011032A (zh)
TW (1) TW201805478A (zh)
WO (1) WO2018012267A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110391120B (zh) * 2018-04-17 2022-02-22 北京北方华创微电子装备有限公司 一种喷头和等离子体处理腔室

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62123721A (ja) * 1985-11-25 1987-06-05 Hitachi Ltd 処理装置
JPH09186140A (ja) * 1995-10-16 1997-07-15 Applied Materials Inc プラズマプロセスリアクタのガスインジェクションスリットノズル
JP2003243365A (ja) * 2002-02-20 2003-08-29 Hitachi High-Technologies Corp プラズマエッチング方法
US20040003777A1 (en) * 2002-07-08 2004-01-08 Carpenter Craig M. Apparatus and method for depositing materials onto microelectronic workpieces
JP2006237093A (ja) * 2005-02-23 2006-09-07 Sanyo Electric Co Ltd プラズマ処理装置およびそれを用いたプラズマ処理方法
JP2009038209A (ja) * 2007-08-01 2009-02-19 Mitsubishi Materials Corp 均一なエッチングを行うことができるシリコン電極板
US20100024727A1 (en) * 2008-08-04 2010-02-04 Samsung Electro-Mechanics Co., Ltd Showerhead and chemical vapor deposition apparatus including the same
WO2010058813A1 (ja) * 2008-11-21 2010-05-27 国立大学法人長岡技術科学大学 基板処理方法及び基板処理装置
WO2013051248A1 (ja) * 2011-10-07 2013-04-11 東京エレクトロン株式会社 プラズマ処理装置
JP2014070249A (ja) * 2012-09-28 2014-04-21 Tokyo Electron Ltd 成膜装置
JP2015134943A (ja) * 2014-01-16 2015-07-27 東京エレクトロン株式会社 基板処理装置

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62123721A (ja) * 1985-11-25 1987-06-05 Hitachi Ltd 処理装置
JPH09186140A (ja) * 1995-10-16 1997-07-15 Applied Materials Inc プラズマプロセスリアクタのガスインジェクションスリットノズル
JP2003243365A (ja) * 2002-02-20 2003-08-29 Hitachi High-Technologies Corp プラズマエッチング方法
US20040003777A1 (en) * 2002-07-08 2004-01-08 Carpenter Craig M. Apparatus and method for depositing materials onto microelectronic workpieces
JP2006237093A (ja) * 2005-02-23 2006-09-07 Sanyo Electric Co Ltd プラズマ処理装置およびそれを用いたプラズマ処理方法
JP2009038209A (ja) * 2007-08-01 2009-02-19 Mitsubishi Materials Corp 均一なエッチングを行うことができるシリコン電極板
US20100024727A1 (en) * 2008-08-04 2010-02-04 Samsung Electro-Mechanics Co., Ltd Showerhead and chemical vapor deposition apparatus including the same
WO2010058813A1 (ja) * 2008-11-21 2010-05-27 国立大学法人長岡技術科学大学 基板処理方法及び基板処理装置
WO2013051248A1 (ja) * 2011-10-07 2013-04-11 東京エレクトロン株式会社 プラズマ処理装置
JP2014070249A (ja) * 2012-09-28 2014-04-21 Tokyo Electron Ltd 成膜装置
JP2015134943A (ja) * 2014-01-16 2015-07-27 東京エレクトロン株式会社 基板処理装置

Also Published As

Publication number Publication date
WO2018012267A1 (ja) 2018-01-18
TW201805478A (zh) 2018-02-16

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