JP2018006624A - 基板処理装置、基板処理方法および記憶媒体 - Google Patents
基板処理装置、基板処理方法および記憶媒体 Download PDFInfo
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Abstract
Description
まず、処理チャンバ30の処理空間31に基板Wが搬入される(ステップS1)。この場合、まず、処理ユニット16の処理容器22内に基板Wが搬入され、温度調節部50の温度調節アーム51上に載置される。この際、温度調節アーム51は、図2において実線で示す温度調節位置に位置づけられている。続いて、温度調節部50の移動駆動部53が駆動されて、温度調節アーム51が、温度調節位置から受渡位置(図2において二点鎖線で示す位置)にレール54に沿って移動する。次に、ホットプレート32の上方に突出している基板昇降機構43の昇降ピン44に、基板Wが渡されて、温度調節アーム51は受渡位置から温度調節位置に退避する。その後、基板シリンダ45が駆動されて昇降ピン44が下降し、基板Wがホットプレート32上に載置される。その後、蓋体シリンダ42が駆動されて、上方位置(図2において二点鎖線で示す位置)に位置づけられている蓋体40が下降して下方位置(図2において実線で示す位置)に位置づけられて、下部容器33の上端面33aに当接する。この蓋体40と下部容器33とによって、密閉された処理空間31が形成される。
基板搬入工程の後(または同時若しくはその前に)、気化タンク60の気化空間61に処理液が供給されて貯留される(ステップS2)。例えば、第1液面センサ66により、第1液面センサ66の位置まで処理液が貯留されていないと判断された場合に、気化空間61に処理液が供給されることが好適である。この場合、図3に示す供給開閉弁80Vが開き、処理液供給部81から処理液供給ライン80を介して気化タンク60に処理液が供給される。供給された処理液は、気化空間61に貯留され、処理液の液面が上昇する。処理液が供給されている間、処理液供給ライン80の出口端80aが気化タンク60の凹部63内に配置されているため、出口端80aから導入される処理液が、跳ね上がったり飛散したりすることが防止されるとともに、貯留される処理液の液面が揺れることが防止される。処理液の液面が飛散防止板68に達しても、飛散防止板68に上述した連通孔(図示せず)が設けられているため、処理液の液面は更に上昇することができる。処理液の液面が第2液面センサ67の位置まで達すると、このことが第2液面センサ67によって検出されて、供給開閉弁80Vが閉じる。このことにより、処理液の供給が停止し、気化空間61に所望量の処理液を貯留することができる。
基板搬入工程の後、かつ処理液貯留工程の後に、処理空間31を介することなく気化空間61を減圧して、気化空間61に貯留された処理液が処理ガスに気化される(ステップS3)。この場合、図3に示す真空ポンプ70が駆動されるとともに第3開閉弁73Vが開く。このことにより、気化空間61と真空ポンプ70が連通し、気化空間61の雰囲気が真空ポンプ70によって吸引されて、気化空間61が減圧される。気化空間61が減圧されると、貯留されている処理液が気化されて、気化空間61が、気化された処理ガスで満たされる。処理液の気化に伴い気化空間61内の処理ガスの圧力は上昇していき、飽和蒸気圧に達する。飽和蒸気圧に達すると、処理液事前気化工程から後述する処理ガス供給工程に移行する。気化空間61内の処理ガスの圧力は、気化空間圧力センサ75により計測される。なお、処理液事前気化工程では、第1ガス開閉弁77Vは閉じられる。
処理液事前気化工程の後、処理空間31を介して気化空間61が減圧され、気化空間61内の処理ガスが処理空間31に供給される(ステップS4)。この場合、真空ポンプ70が駆動されるとともに第1開閉弁71Vおよび第2開閉弁72Vが開き、第3開閉弁73Vが閉じられる。このことにより、気化空間61と処理空間31とが連通するとともに、処理空間31と真空ポンプ70とが連通し、気化空間61の雰囲気が処理空間31を介して真空ポンプ70によって吸引される。このため、気化空間61内の処理ガスが処理空間31に供給され、処理空間31の雰囲気が処理ガス雰囲気に置換される。処理ガス供給工程の間、気化空間61は真空ポンプ70によって減圧され続けるため、気化空間61に貯留された処理液は処理ガスに気化され続け、処理空間31に処理ガスが連続的に供給される。
処理ガス供給工程の後、処理空間31に不活性ガスがパージされる(ステップS5)。この場合、まず、図3に示す真空ポンプ70を停止するとともに、第1開閉弁71V、第2開閉弁72Vおよび第1ガス開閉弁77Vが閉じられる。続いて、第2ガス開閉弁78Vおよび第2流量調整弁78Fが開き、不活性ガス供給部76と処理空間31とが、気化空間61を介することなく連通し、処理空間31内に不活性ガスが供給される。このことにより、処理空間31内の不活性ガスの圧力を上昇させ、処理空間31内の圧力が大気圧となった時点で、第2ガス開閉弁78Vが閉じられる。処理空間31内の圧力は、処理空間圧力センサ74により計測される。
不活性ガスパージ工程の後、基板Wが冷却される(ステップS6)。この場合、まず、蓋体シリンダ42が駆動されて、下方位置に位置づけられている蓋体40が上昇して上方位置に位置づけられる。続いて、基板シリンダ45が駆動されて昇降ピン44が上昇し、基板Wがホットプレート32から上方に離れる。次に、温度調節部50の移動駆動部53が駆動されて、温度調節位置に退避していた温度調節アーム51が受渡位置に位置づけられて、基板Wが温度調節アーム51に渡される。その後、基板Wを受け取った温度調節アーム51が受渡位置から温度調節位置に移動する。
基板冷却工程の後、基板Wが処理容器22から搬出される(ステップS7)。
18 制御部
30 処理チャンバ
31 処理空間
60 気化タンク
61 気化空間
62a 本体底面
63 凹部
66 第1液面センサ
67 第2液面センサ
68 飛散防止板
70 真空ポンプ
71 第1ライン
71V 第1開閉弁
72 第2ライン
72V 第2開閉弁
73 第3ライン
73V 第3開閉弁
76 不活性ガス供給部
80 処理液供給ライン
80a 出口端
85 処理液排出ライン
85a 入口端
86 入口端側配管部
87 切欠部
90 タンクヒータ
Claims (9)
- 基板を処理する処理空間を有する処理チャンバと、
処理液を貯留するとともに貯留された前記処理液が気化可能な気化空間を有する気化タンクと、
前記処理空間を介して前記気化空間を減圧して、前記気化空間に貯留された前記処理液を処理ガスに気化させ、気化した前記処理ガスを前記処理空間に供給する減圧駆動部と、
前記気化空間に不活性ガスを供給する不活性ガス供給部と、
前記気化空間と前記処理空間とを連通する第1ラインと、
前記処理空間と前記減圧駆動部とを連通する第2ラインと、
前記気化空間と前記減圧駆動部とを、前記処理空間を介することなく連通する第3ラインと、
前記不活性ガス供給部と前記気化空間とを連通する第1ガス供給ラインと、
前記第1ラインに設けられた第1開閉弁と、
前記第2ラインに設けられた第2開閉弁と、
前記第3ラインに設けられた第3開閉弁と、
前記第1ガス供給ラインに設けられた第1ガス開閉弁と、
前記減圧駆動部、前記第1開閉弁、前記第2開閉弁、前記第3開閉弁および前記第1ガス開閉弁を制御する制御部と、を更に備え、
前記制御部は、前記第1開閉弁および前記第1ガス開閉弁を閉じるとともに前記第3開閉弁を開いて、前記処理空間を介することなく前記気化空間を減圧して前記気化空間に貯留された前記処理液を前記処理ガスに気化させ、その後、前記第1開閉弁、前記第2開閉弁および前記第1ガス開閉弁を開くとともに前記第3開閉弁を閉じて、前記処理空間を介して前記気化空間を減圧して前記気化空間に貯留された前記処理液を前記処理ガスに気化させるとともに前記気化空間に前記不活性ガスを供給する、基板処理装置。 - 前記第1ガス供給ラインに設けられ、前記不活性ガスの流量を調整する第1流量調整弁を更に備えた、請求項1に記載の基板処理装置。
- 前記気化タンクは、貯留された前記処理液の液面を検出する第1液面センサと、前記第1液面センサよりも高い位置に設けられ、前記処理液の液面を検出する第2液面センサと、を有し、
前記第1液面センサの高さ位置と前記第2液面センサの高さ位置との間に、前記処理液の飛散を防止する飛散防止部材が設けられている、請求項1または2に記載の基板処理装置。 - 前記気化タンクを加熱するタンク加熱部を更に備えた、請求項1乃至3のいずれか一項に記載の基板処理装置。
- 前記気化タンクは、本体底面と、前記本体底面に設けられた凹部と、を有し、
前記気化タンクに、前記処理液を供給する処理液供給ラインが連通されており、
前記処理液供給ラインの出口端は、前記気化タンクの前記凹部内に配置されている、請求項1乃至4のいずれか一項に記載の基板処理装置。 - 前記気化タンクは、本体底面と、前記本体底面に設けられた凹部と、を有し、
前記気化タンクに、貯留された前記処理液を排出する処理液排出ラインが連通されており、
前記処理液排出ラインの入口端は、前記気化タンクの前記凹部内に配置されている、請求項1乃至4のいずれか一項に記載の基板処理装置。 - 前記処理液排出ラインは、前記気化タンク内に設けられた入口端側配管部を含み、
前記入口端側配管部に、入口端から延びる切欠部が設けられている、請求項6に記載の基板処理装置。 - 基板を処理する処理空間に前記基板を搬入する搬入工程と、
気化タンクの気化空間に処理液を供給して貯留する貯留工程と、
前記処理空間を介することなく前記気化空間を減圧して、前記気化空間に貯留された前記処理液を処理ガスに気化させる気化工程と、
前記気化工程の後、前記処理空間を介して前記気化空間を減圧して、前記気化空間に貯留された前記処理液を前記処理ガスに気化させ、気化した前記処理ガスを前記処理空間に供給するとともに、前記気化空間に不活性ガスを供給する供給工程と、を備えた、基板処理方法。 - 基板処理装置の動作を制御するためのコンピュータにより実行されたときに、前記コンピュータが前記基板処理装置を制御して請求項8に記載の基板処理方法を実行させるプログラムが記録された記憶媒体。
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