JP2018005206A - 半導体装置および電子機器 - Google Patents

半導体装置および電子機器 Download PDF

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Publication number
JP2018005206A
JP2018005206A JP2016153729A JP2016153729A JP2018005206A JP 2018005206 A JP2018005206 A JP 2018005206A JP 2016153729 A JP2016153729 A JP 2016153729A JP 2016153729 A JP2016153729 A JP 2016153729A JP 2018005206 A JP2018005206 A JP 2018005206A
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JP
Japan
Prior art keywords
transistor
electrode
insulating layer
wiring
electrically connected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2016153729A
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English (en)
Japanese (ja)
Other versions
JP2018005206A5 (enExample
Inventor
雅史 藤田
Masafumi Fujita
雅史 藤田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of JP2018005206A publication Critical patent/JP2018005206A/ja
Publication of JP2018005206A5 publication Critical patent/JP2018005206A5/ja
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Landscapes

  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Control Of El Displays (AREA)
  • Logic Circuits (AREA)
JP2016153729A 2015-08-07 2016-08-04 半導体装置および電子機器 Withdrawn JP2018005206A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2015157174 2015-08-07
JP2015157174 2015-08-07
JP2016124397 2016-06-23
JP2016124397 2016-06-23

Publications (2)

Publication Number Publication Date
JP2018005206A true JP2018005206A (ja) 2018-01-11
JP2018005206A5 JP2018005206A5 (enExample) 2019-09-05

Family

ID=58053041

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016153729A Withdrawn JP2018005206A (ja) 2015-08-07 2016-08-04 半導体装置および電子機器

Country Status (2)

Country Link
US (1) US9704893B2 (enExample)
JP (1) JP2018005206A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022106943A1 (ja) * 2020-11-17 2022-05-27 株式会社半導体エネルギー研究所 半導体装置、表示装置、表示モジュール、及び電子機器

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KR20170031620A (ko) * 2015-09-11 2017-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 제작 방법
CN110036433A (zh) * 2016-09-27 2019-07-19 伊努鲁有限公司 电子器件的无损集成
KR102863650B1 (ko) 2018-09-12 2025-09-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
CN115668757A (zh) 2020-05-15 2023-01-31 株式会社半导体能源研究所 半导体装置
US12183277B2 (en) * 2021-03-29 2024-12-31 Chengdu Boe Optoelectronics Technology Co., Ltd. Pixel circuit, display panel, and display device

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SG120889A1 (en) 2001-09-28 2006-04-26 Semiconductor Energy Lab A light emitting device and electronic apparatus using the same
JP2003150107A (ja) 2001-11-09 2003-05-23 Sharp Corp 表示装置およびその駆動方法
JP4350463B2 (ja) * 2002-09-02 2009-10-21 キヤノン株式会社 入力回路及び表示装置及び情報表示装置
US7961160B2 (en) 2003-07-31 2011-06-14 Semiconductor Energy Laboratory Co., Ltd. Display device, a driving method of a display device, and a semiconductor integrated circuit incorporated in a display device
US7405713B2 (en) 2003-12-25 2008-07-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic equipment using the same
JP4501785B2 (ja) * 2004-09-30 2010-07-14 セイコーエプソン株式会社 画素回路及び電子機器
KR100739318B1 (ko) * 2004-11-22 2007-07-12 삼성에스디아이 주식회사 화소회로 및 발광 표시장치
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
KR100635500B1 (ko) * 2005-05-24 2006-10-17 삼성에스디아이 주식회사 시프트 레지스터 및 이를 포함하는 유기 전계발광 표시장치
US7468485B1 (en) 2005-08-11 2008-12-23 Sunpower Corporation Back side contact solar cell with doped polysilicon regions
EP1796070A1 (en) 2005-12-08 2007-06-13 Thomson Licensing Luminous display and method for controlling the same
JP4240059B2 (ja) 2006-05-22 2009-03-18 ソニー株式会社 表示装置及びその駆動方法
EP1895545B1 (en) * 2006-08-31 2014-04-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8058675B2 (en) 2006-12-27 2011-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device using the same
US8514165B2 (en) 2006-12-28 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5242152B2 (ja) 2007-12-21 2013-07-24 グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー 表示装置
JP2009265459A (ja) 2008-04-28 2009-11-12 Fujifilm Corp 画素回路および表示装置
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JP2010266492A (ja) 2009-05-12 2010-11-25 Sony Corp 画素回路、表示装置、画素回路の駆動方法
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JP6018409B2 (ja) 2011-05-13 2016-11-02 株式会社半導体エネルギー研究所 発光装置
JP6099336B2 (ja) 2011-09-14 2017-03-22 株式会社半導体エネルギー研究所 発光装置
KR20230098374A (ko) 2011-10-18 2023-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
TWI441138B (zh) 2011-12-30 2014-06-11 Au Optronics Corp 發光二極體電路，驅動發光二極體電路之方法及發光二極體顯示器
WO2013137014A1 (en) 2012-03-13 2013-09-19 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for driving the same
US9320111B2 (en) 2012-05-31 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
KR101992665B1 (ko) 2012-12-26 2019-06-25 엘지디스플레이 주식회사 유기 발광 표시 장치 및 이의 구동 방법
KR102061554B1 (ko) 2013-05-28 2020-01-03 삼성디스플레이 주식회사 표시 장치 및 그 구동 방법
US9552767B2 (en) 2013-08-30 2017-01-24 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP6495602B2 (ja) 2013-09-13 2019-04-03 株式会社半導体エネルギー研究所 発光装置
JP6633346B2 (ja) 2014-10-31 2020-01-22 株式会社半導体エネルギー研究所 表示装置
TWI682632B (zh) 2014-12-26 2020-01-11 日商半導體能源研究所股份有限公司 半導體裝置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022106943A1 (ja) * 2020-11-17 2022-05-27 株式会社半導体エネルギー研究所 半導体装置、表示装置、表示モジュール、及び電子機器
JPWO2022106943A1 (enExample) * 2020-11-17 2022-05-27
JP7719795B2 (ja) 2020-11-17 2025-08-06 株式会社半導体エネルギー研究所 半導体装置

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Publication number Publication date
US20170040344A1 (en) 2017-02-09
US9704893B2 (en) 2017-07-11

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