JP2017534070A5 - - Google Patents
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- Publication number
- JP2017534070A5 JP2017534070A5 JP2016534124A JP2016534124A JP2017534070A5 JP 2017534070 A5 JP2017534070 A5 JP 2017534070A5 JP 2016534124 A JP2016534124 A JP 2016534124A JP 2016534124 A JP2016534124 A JP 2016534124A JP 2017534070 A5 JP2017534070 A5 JP 2017534070A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- photoresist composition
- compound
- crosslinking system
- divalent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/516,472 US9383646B2 (en) | 2014-02-24 | 2014-10-16 | Two-step photoresist compositions and methods |
| PCT/US2015/065691 WO2016086236A2 (en) | 2014-02-24 | 2015-12-15 | Two-step photoresist compositions and methods |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2017534070A JP2017534070A (ja) | 2017-11-16 |
| JP2017534070A5 true JP2017534070A5 (https=) | 2018-11-08 |
Family
ID=60201754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016534124A Pending JP2017534070A (ja) | 2014-10-16 | 2015-12-15 | 二段階フォトレジスト組成物および方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9383646B2 (https=) |
| JP (1) | JP2017534070A (https=) |
| KR (1) | KR20170118587A (https=) |
| CN (1) | CN107087426A (https=) |
| WO (1) | WO2016086236A2 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10290500B2 (en) * | 2014-10-08 | 2019-05-14 | Irresistible Materials Ltd | Spin on hard mask material |
| US10095112B2 (en) * | 2017-02-24 | 2018-10-09 | Irresistible Materials Ltd | Multiple trigger photoresist compositions and methods |
| KR102417180B1 (ko) * | 2017-09-29 | 2022-07-05 | 삼성전자주식회사 | Duv용 포토레지스트 조성물, 패턴 형성 방법 및 반도체 소자의 제조 방법 |
| CN113994256A (zh) * | 2019-05-19 | 2022-01-28 | 亚历克斯·P·G·罗宾逊 | Euv图案化抗蚀剂形成方法 |
| JP2020196771A (ja) * | 2019-05-30 | 2020-12-10 | Jsr株式会社 | 組成物、レジスト下層膜、レジスト下層膜の形成方法及びパターニングされた基板の製造方法 |
| US12510821B2 (en) * | 2020-05-21 | 2025-12-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist composition and method of forming photoresist pattern |
| US12386266B2 (en) * | 2021-12-13 | 2025-08-12 | Changxin Memory Technologies, Inc. | Method of processing photoresist layer, and photoresist layer |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997033198A1 (en) * | 1996-03-07 | 1997-09-12 | The B.F. Goodrich Company | Photoresist compositions comprising polycyclic polymers with acid labile pendant groups |
| US6190829B1 (en) * | 1996-09-16 | 2001-02-20 | International Business Machines Corporation | Low “K” factor hybrid photoresist |
| US6114082A (en) * | 1996-09-16 | 2000-09-05 | International Business Machines Corporation | Frequency doubling hybrid photoresist having negative and positive tone components and method of preparing the same |
| JP4554665B2 (ja) * | 2006-12-25 | 2010-09-29 | 富士フイルム株式会社 | パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液 |
| US8530148B2 (en) * | 2006-12-25 | 2013-09-10 | Fujifilm Corporation | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method |
| GB0920231D0 (en) * | 2009-11-18 | 2010-01-06 | Univ Birmingham | Photoresist composition |
| IL213195A0 (en) * | 2010-05-31 | 2011-07-31 | Rohm & Haas Elect Mat | Photoresist compositions and emthods of forming photolithographic patterns |
| JP5621755B2 (ja) * | 2011-11-17 | 2014-11-12 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料及びパターン形成方法 |
| US9256126B2 (en) * | 2012-11-14 | 2016-02-09 | Irresistible Materials Ltd | Methanofullerenes |
| US9323149B2 (en) * | 2013-03-05 | 2016-04-26 | Irresistible Materials Ltd | Methanofullerenes |
| US9046767B2 (en) * | 2013-10-25 | 2015-06-02 | Rohm And Haas Electronic Materials Llc | Photoacid generator, photoresist, coated substrate, and method of forming an electronic device |
-
2014
- 2014-10-16 US US14/516,472 patent/US9383646B2/en active Active
-
2015
- 2015-12-15 KR KR1020167015368A patent/KR20170118587A/ko not_active Withdrawn
- 2015-12-15 WO PCT/US2015/065691 patent/WO2016086236A2/en not_active Ceased
- 2015-12-15 CN CN201580002527.0A patent/CN107087426A/zh active Pending
- 2015-12-15 JP JP2016534124A patent/JP2017534070A/ja active Pending
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