JP2017533584A - キャリアの製造方法およびオプトエレクトロニクス部品の製造方法 - Google Patents
キャリアの製造方法およびオプトエレクトロニクス部品の製造方法 Download PDFInfo
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- JP2017533584A JP2017533584A JP2017518334A JP2017518334A JP2017533584A JP 2017533584 A JP2017533584 A JP 2017533584A JP 2017518334 A JP2017518334 A JP 2017518334A JP 2017518334 A JP2017518334 A JP 2017518334A JP 2017533584 A JP2017533584 A JP 2017533584A
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- 230000005693 optoelectronics Effects 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000010409 thin film Substances 0.000 claims abstract description 88
- 239000012778 molding material Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims description 57
- 239000004065 semiconductor Substances 0.000 claims description 33
- 239000002313 adhesive film Substances 0.000 claims description 6
- 238000000465 moulding Methods 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 238000001721 transfer moulding Methods 0.000 claims description 3
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 claims description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Abstract
Description
本特許出願は、独国特許出願第102014116370.2号の優先権を主張し、その開示内容は参照によって本明細書に援用される。
100 リードフレーム
101 上面
102 下面
110 第1のリードフレーム部分
120 第2のリードフレーム部分
200 第1の薄膜
201 第1の面
202 第2の面
300 第2の薄膜
301 第1の面
302 第2の面
310 被覆されない部分
400 成形体
401 上面
402 下面
410 成形体部分
500 キャリア
501 上面
502 下面
600 オプトエレクトロニクス半導体チップ
601 上面
602 下面
610 ボンディングワイヤ
Claims (11)
- 上面(101)および下面(102)を有するリードフレーム(100)を設けるステップと、
前記リードフレーム(100)の前記下面(102)に第1の薄膜(200)を配置するステップと、
前記リードフレーム(100)の前記上面(101)に第2の薄膜(300)を配置するステップと、
成形材料から成形体(400)を形成するステップであって、前記リードフレーム(100)は、前記成形体(400)に埋め込まれる、ステップと、
前記第1の薄膜(200)および前記第2の薄膜(300)を除去するステップと、
を含む、オプトエレクトロニクス部品(10)のためのキャリア(500)の製造方法。 - 前記第1の薄膜(200)および/または前記第2の薄膜(300)は、粘着フィルムである、
請求項1に記載の方法。 - 前記第1の薄膜(200)および/または前記第2の薄膜(300)は、ポリイミド、ETFE、またはPETを含む、
請求項1または2に記載の方法。 - 前記成形体(400)は、成形方法によって、特にトランスファー成形法によって形成される、
請求項1〜3のいずれか一項に記載の方法。 - 前記第1の薄膜(200)または前記第2の薄膜(300)は、前記リードフレーム(100)の前記下面(102)または前記上面(101)の部分(310)が前記薄膜(200,300)によって被覆されないままであるように配置され、前記成形材料は、前記被覆されない部分(310)において前記第1の薄膜(200)と前記第2の薄膜(300)との間に送られる、
請求項1〜4のいずれか一項に記載の方法。 - 前記成形材料は、エポキシ樹脂および/またはシリコーンを含む、
請求項1〜5のいずれか一項に記載の方法。 - 前記リードフレーム(100)は、複数の第1のリードフレーム部分(110)および複数の第2のリードフレーム部分(120)を備える、
請求項1〜6のいずれか一項に記載の方法。 - 請求項1〜7のいずれか一項に記載の方法によってキャリア(500)を製造するステップと、
前記キャリア(500)の上面(501)にオプトエレクトロニクス半導体チップ(600)を配置するステップと、
を含む、オプトエレクトロニクス部品(10)の製造方法。 - 前記キャリア(500)は、請求項7に記載の方法によって形成され、
前記オプトエレクトロニクス半導体チップ(600)は、第1のリードフレーム部分(110)および第2のリードフレーム部分(120)に電気接続される、
請求項8に記載の方法。 - 前記オプトエレクトロニクス半導体チップ(600)は、第1のリードフレーム部分(110)に配置される、
請求項9に記載の方法。 - 前記第1のリードフレーム部分(110)の1つおよび前記第2のリードフレーム部分(120)の1つが埋め込まれる成形体部分(410)が形成されるように前記成形体(400)を分割するさらなるステップを含み、
前記オプトエレクトロニクス半導体チップ(600)は、前記成形体部分(410)に配置される、
請求項9または10に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014116370.2 | 2014-11-10 | ||
DE102014116370.2A DE102014116370A1 (de) | 2014-11-10 | 2014-11-10 | Verfahren zum Herstellen eines Trägers und Verfahren zum Herstellen eines optoelektronischen Bauelements |
PCT/EP2015/076159 WO2016075114A1 (de) | 2014-11-10 | 2015-11-10 | Verfahren zum herstellen eines trägers und verfahren zum herstellen eines optoelektronischen bauelements |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2017533584A true JP2017533584A (ja) | 2017-11-09 |
Family
ID=54478771
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017518334A Pending JP2017533584A (ja) | 2014-11-10 | 2015-11-10 | キャリアの製造方法およびオプトエレクトロニクス部品の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20170324006A1 (ja) |
JP (1) | JP2017533584A (ja) |
KR (1) | KR102479810B1 (ja) |
CN (1) | CN107112402A (ja) |
DE (2) | DE102014116370A1 (ja) |
WO (1) | WO2016075114A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008244143A (ja) * | 2007-03-27 | 2008-10-09 | Toshiba Corp | 半導体発光装置の製造方法 |
JP2012084724A (ja) * | 2010-10-13 | 2012-04-26 | Nichia Chem Ind Ltd | 樹脂パッケージ及びその製造方法、樹脂パッケージを用いた発光装置 |
US20130037837A1 (en) * | 2011-08-08 | 2013-02-14 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Miniature leadless surface mount lamp with dome and reflector cup |
JP2013251422A (ja) * | 2012-06-01 | 2013-12-12 | Apic Yamada Corp | Ledチップ実装用基板、ledパッケージ、金型、並びに、ledチップ実装用基板及びledパッケージの製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4676735B2 (ja) * | 2004-09-22 | 2011-04-27 | 東レ・ダウコーニング株式会社 | 光半導体装置の製造方法および光半導体装置 |
US9944031B2 (en) * | 2007-02-13 | 2018-04-17 | 3M Innovative Properties Company | Molded optical articles and methods of making same |
JP5233170B2 (ja) * | 2007-05-31 | 2013-07-10 | 日亜化学工業株式会社 | 発光装置、発光装置を構成する樹脂成形体及びそれらの製造方法 |
DE102010025319B4 (de) * | 2010-06-28 | 2022-05-25 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines oberflächenmontierbaren Halbleiterbauelements und oberflächenmontierbare Halbleiterbauelemente |
JP2013239539A (ja) * | 2012-05-14 | 2013-11-28 | Shin Etsu Chem Co Ltd | 光半導体装置用基板とその製造方法、及び光半導体装置とその製造方法 |
CN103972371B (zh) * | 2013-02-04 | 2017-02-08 | 展晶科技(深圳)有限公司 | 发光二极管封装结构及其制造方法 |
DE102013203350A1 (de) * | 2013-02-28 | 2014-08-28 | Osram Opto Semiconductors Gmbh | Elektronisches Bauelement und Verfahren zu seiner Herstellung |
-
2014
- 2014-11-10 DE DE102014116370.2A patent/DE102014116370A1/de not_active Withdrawn
-
2015
- 2015-11-10 KR KR1020177012023A patent/KR102479810B1/ko active IP Right Grant
- 2015-11-10 WO PCT/EP2015/076159 patent/WO2016075114A1/de active Application Filing
- 2015-11-10 JP JP2017518334A patent/JP2017533584A/ja active Pending
- 2015-11-10 DE DE112015005080.9T patent/DE112015005080A5/de active Pending
- 2015-11-10 CN CN201580060980.7A patent/CN107112402A/zh active Pending
- 2015-11-10 US US15/525,404 patent/US20170324006A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008244143A (ja) * | 2007-03-27 | 2008-10-09 | Toshiba Corp | 半導体発光装置の製造方法 |
JP2012084724A (ja) * | 2010-10-13 | 2012-04-26 | Nichia Chem Ind Ltd | 樹脂パッケージ及びその製造方法、樹脂パッケージを用いた発光装置 |
US20130037837A1 (en) * | 2011-08-08 | 2013-02-14 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Miniature leadless surface mount lamp with dome and reflector cup |
JP2013251422A (ja) * | 2012-06-01 | 2013-12-12 | Apic Yamada Corp | Ledチップ実装用基板、ledパッケージ、金型、並びに、ledチップ実装用基板及びledパッケージの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN107112402A (zh) | 2017-08-29 |
KR102479810B1 (ko) | 2022-12-22 |
WO2016075114A1 (de) | 2016-05-19 |
US20170324006A1 (en) | 2017-11-09 |
KR20170084058A (ko) | 2017-07-19 |
DE102014116370A1 (de) | 2016-05-12 |
DE112015005080A5 (de) | 2017-08-03 |
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