JP2017531311A5 - - Google Patents

Download PDF

Info

Publication number
JP2017531311A5
JP2017531311A5 JP2017510574A JP2017510574A JP2017531311A5 JP 2017531311 A5 JP2017531311 A5 JP 2017531311A5 JP 2017510574 A JP2017510574 A JP 2017510574A JP 2017510574 A JP2017510574 A JP 2017510574A JP 2017531311 A5 JP2017531311 A5 JP 2017531311A5
Authority
JP
Japan
Prior art keywords
group
cmp composition
amino acid
cmp
composition comprises
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2017510574A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017531311A (ja
JP6603309B2 (ja
Filing date
Publication date
Priority claimed from US14/308,587 external-priority patent/US20160053381A1/en
Application filed filed Critical
Publication of JP2017531311A publication Critical patent/JP2017531311A/ja
Publication of JP2017531311A5 publication Critical patent/JP2017531311A5/ja
Application granted granted Critical
Publication of JP6603309B2 publication Critical patent/JP6603309B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2017510574A 2014-08-22 2015-06-17 ゲルマニウムの化学機械研磨 Active JP6603309B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/308,587 2014-08-22
US14/308,587 US20160053381A1 (en) 2014-08-22 2014-08-22 Germanium chemical mechanical polishing
PCT/US2015/036222 WO2016028370A1 (en) 2014-08-22 2015-06-17 Germanium chemical mechanical polishing

Publications (3)

Publication Number Publication Date
JP2017531311A JP2017531311A (ja) 2017-10-19
JP2017531311A5 true JP2017531311A5 (cg-RX-API-DMAC7.html) 2018-06-28
JP6603309B2 JP6603309B2 (ja) 2019-11-06

Family

ID=55347801

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017510574A Active JP6603309B2 (ja) 2014-08-22 2015-06-17 ゲルマニウムの化学機械研磨

Country Status (6)

Country Link
US (1) US20160053381A1 (cg-RX-API-DMAC7.html)
JP (1) JP6603309B2 (cg-RX-API-DMAC7.html)
KR (1) KR102444550B1 (cg-RX-API-DMAC7.html)
CN (1) CN106574171B (cg-RX-API-DMAC7.html)
TW (1) TWI572687B (cg-RX-API-DMAC7.html)
WO (1) WO2016028370A1 (cg-RX-API-DMAC7.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9597768B1 (en) * 2015-09-09 2017-03-21 Cabot Microelectronics Corporation Selective nitride slurries with improved stability and improved polishing characteristics
JP2021089906A (ja) * 2018-03-22 2021-06-10 株式会社フジミインコーポレーテッド ゲルマニウム溶解抑制剤
US10676647B1 (en) * 2018-12-31 2020-06-09 Cabot Microelectronics Corporation Composition for tungsten CMP
JP7409899B2 (ja) * 2020-02-18 2024-01-09 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法、および半導体基板の製造方法
KR102455159B1 (ko) * 2020-07-17 2022-10-18 주식회사 케이씨텍 금속막 연마용 슬러리 조성물
KR20220130544A (ko) * 2021-03-18 2022-09-27 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
WO2022224357A1 (ja) * 2021-04-20 2022-10-27 昭和電工マテリアルズ株式会社 Cmp研磨液及び研磨方法
TWI890123B (zh) * 2021-09-23 2025-07-11 美商Cmc材料有限責任公司 用於介電質化學機械研磨之包含高分子量聚合物之基於二氧化矽之漿料組合物

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007012638A (ja) * 2003-10-01 2007-01-18 Asahi Kasei Chemicals Corp 金属用研磨組成物
US20080105651A1 (en) * 2004-09-14 2008-05-08 Katsumi Mabuchi Polishing Slurry for Cmp
CN101573425B (zh) * 2006-12-29 2013-03-20 株式会社Lg化学 用于形成金属导线的cmp浆料组合物
US7915071B2 (en) * 2007-08-30 2011-03-29 Dupont Air Products Nanomaterials, Llc Method for chemical mechanical planarization of chalcogenide materials
US7678605B2 (en) * 2007-08-30 2010-03-16 Dupont Air Products Nanomaterials Llc Method for chemical mechanical planarization of chalcogenide materials
US8247327B2 (en) * 2008-07-30 2012-08-21 Cabot Microelectronics Corporation Methods and compositions for polishing silicon-containing substrates
KR101396232B1 (ko) * 2010-02-05 2014-05-19 한양대학교 산학협력단 상변화 물질 연마용 슬러리 및 이를 이용한 상변화 소자 제조 방법
US20120190200A1 (en) * 2011-01-24 2012-07-26 Clarkson University Abrasive Free Silicon Chemical Mechanical Planarization
CN103827235B (zh) * 2011-08-01 2016-08-17 巴斯夫欧洲公司 一种制造半导体装置的方法,其包括在包含特定有机化合物的CMP组合物的存在下化学机械抛光元素锗及/或Si1-xGex材料
JP2013080751A (ja) * 2011-09-30 2013-05-02 Fujimi Inc 研磨用組成物
US20150060400A1 (en) * 2012-04-18 2015-03-05 Fujimi Incorporated Polishing composition
US8778211B2 (en) * 2012-07-17 2014-07-15 Cabot Microelectronics Corporation GST CMP slurries

Similar Documents

Publication Publication Date Title
JP2017531311A5 (cg-RX-API-DMAC7.html)
JP6603309B2 (ja) ゲルマニウムの化学機械研磨
JP6530401B2 (ja) 窒化ケイ素の選択的な除去のためのcmp組成物及び方法
KR102482166B1 (ko) 텅스텐 cmp용 조성물
KR102253294B1 (ko) 산화규소, 질화규소 및 폴리실리콘 물질의 cmp를 위한 조성물 및 방법
CN101437912B (zh) 氧化稳定的化学机械抛光组合物及方法
JP2018512475A5 (cg-RX-API-DMAC7.html)
EP2859059B1 (en) Composition and method for polishing molybdenum
US9303189B2 (en) Composition for tungsten CMP
EP3116970B1 (en) Composition for tungsten cmp
KR102774705B1 (ko) 양이온성 계면활성제를 함유하는 텅스텐-가공 슬러리
TW201211220A (en) Polishing composition and polishing method
JP2010541203A5 (cg-RX-API-DMAC7.html)
JP2022541201A (ja) バルクタングステンスラリーにおけるバリア膜の除去速度を増加させる方法
KR102039319B1 (ko) 중합체성 폴리아민을 포함하는 화학적 기계적 폴리싱 (cmp) 조성물
WO2017047307A1 (ja) 研磨用組成物
TWI774889B (zh) 用於降低磨料顆粒與清潔刷之間的相互作用之組合物及方法
TW200539351A (en) Compositions and methods for chemical mechanical polishing silica and silicon nitride