CN106574171B - 锗的化学机械抛光 - Google Patents

锗的化学机械抛光 Download PDF

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Publication number
CN106574171B
CN106574171B CN201580045242.5A CN201580045242A CN106574171B CN 106574171 B CN106574171 B CN 106574171B CN 201580045242 A CN201580045242 A CN 201580045242A CN 106574171 B CN106574171 B CN 106574171B
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CN
China
Prior art keywords
composition
germanium
poly
cmp
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201580045242.5A
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English (en)
Chinese (zh)
Other versions
CN106574171A (zh
Inventor
蔡智斌
叶铭智
G.怀特纳
吕龙岱
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Publication of CN106574171A publication Critical patent/CN106574171A/zh
Application granted granted Critical
Publication of CN106574171B publication Critical patent/CN106574171B/zh
Expired - Fee Related legal-status Critical Current
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Dispersion Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
CN201580045242.5A 2014-08-22 2015-06-17 锗的化学机械抛光 Expired - Fee Related CN106574171B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/308,587 2014-08-22
US14/308,587 US20160053381A1 (en) 2014-08-22 2014-08-22 Germanium chemical mechanical polishing
PCT/US2015/036222 WO2016028370A1 (en) 2014-08-22 2015-06-17 Germanium chemical mechanical polishing

Publications (2)

Publication Number Publication Date
CN106574171A CN106574171A (zh) 2017-04-19
CN106574171B true CN106574171B (zh) 2019-03-19

Family

ID=55347801

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580045242.5A Expired - Fee Related CN106574171B (zh) 2014-08-22 2015-06-17 锗的化学机械抛光

Country Status (6)

Country Link
US (1) US20160053381A1 (cg-RX-API-DMAC7.html)
JP (1) JP6603309B2 (cg-RX-API-DMAC7.html)
KR (1) KR102444550B1 (cg-RX-API-DMAC7.html)
CN (1) CN106574171B (cg-RX-API-DMAC7.html)
TW (1) TWI572687B (cg-RX-API-DMAC7.html)
WO (1) WO2016028370A1 (cg-RX-API-DMAC7.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9597768B1 (en) * 2015-09-09 2017-03-21 Cabot Microelectronics Corporation Selective nitride slurries with improved stability and improved polishing characteristics
JP2021089906A (ja) * 2018-03-22 2021-06-10 株式会社フジミインコーポレーテッド ゲルマニウム溶解抑制剤
US10676647B1 (en) * 2018-12-31 2020-06-09 Cabot Microelectronics Corporation Composition for tungsten CMP
JP7409899B2 (ja) * 2020-02-18 2024-01-09 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法、および半導体基板の製造方法
KR102455159B1 (ko) * 2020-07-17 2022-10-18 주식회사 케이씨텍 금속막 연마용 슬러리 조성물
KR20220130544A (ko) * 2021-03-18 2022-09-27 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
WO2022224357A1 (ja) * 2021-04-20 2022-10-27 昭和電工マテリアルズ株式会社 Ｃｍｐ研磨液及び研磨方法
TWI890123B (zh) * 2021-09-23 2025-07-11 美商Ｃｍｃ材料有限責任公司 用於介電質化學機械研磨之包含高分子量聚合物之基於二氧化矽之漿料組合物

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201333129A (zh) * 2011-09-30 2013-08-16 Fujimi Inc 研磨用組成物
CN103827235A (zh) * 2011-08-01 2014-05-28 巴斯夫欧洲公司 一种制造半导体装置的方法，其包括在包含特定有机化合物的CMP组合物的存在下化学机械抛光元素锗及/或Si1-xGex材料

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007012638A (ja) * 2003-10-01 2007-01-18 Asahi Kasei Chemicals Corp 金属用研磨組成物
US20080105651A1 (en) * 2004-09-14 2008-05-08 Katsumi Mabuchi Polishing Slurry for Cmp
CN101573425B (zh) * 2006-12-29 2013-03-20 株式会社Lg化学 用于形成金属导线的cmp浆料组合物
US7915071B2 (en) * 2007-08-30 2011-03-29 Dupont Air Products Nanomaterials, Llc Method for chemical mechanical planarization of chalcogenide materials
US7678605B2 (en) * 2007-08-30 2010-03-16 Dupont Air Products Nanomaterials Llc Method for chemical mechanical planarization of chalcogenide materials
US8247327B2 (en) * 2008-07-30 2012-08-21 Cabot Microelectronics Corporation Methods and compositions for polishing silicon-containing substrates
KR101396232B1 (ko) * 2010-02-05 2014-05-19 한양대학교 산학협력단 상변화 물질 연마용 슬러리 및 이를 이용한 상변화 소자 제조 방법
US20120190200A1 (en) * 2011-01-24 2012-07-26 Clarkson University Abrasive Free Silicon Chemical Mechanical Planarization
US20150060400A1 (en) * 2012-04-18 2015-03-05 Fujimi Incorporated Polishing composition
US8778211B2 (en) * 2012-07-17 2014-07-15 Cabot Microelectronics Corporation GST CMP slurries

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103827235A (zh) * 2011-08-01 2014-05-28 巴斯夫欧洲公司 一种制造半导体装置的方法，其包括在包含特定有机化合物的CMP组合物的存在下化学机械抛光元素锗及/或Si1-xGex材料
TW201333129A (zh) * 2011-09-30 2013-08-16 Fujimi Inc 研磨用組成物

Also Published As

Publication number Publication date
TW201608000A (zh) 2016-03-01
US20160053381A1 (en) 2016-02-25
WO2016028370A1 (en) 2016-02-25
JP2017531311A (ja) 2017-10-19
TWI572687B (zh) 2017-03-01
KR20170044156A (ko) 2017-04-24
KR102444550B1 (ko) 2022-09-20
CN106574171A (zh) 2017-04-19
JP6603309B2 (ja) 2019-11-06

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Address after: Illinois, USA

Patentee after: CMC Materials Co.,Ltd.

Address before: Illinois, USA

Patentee before: Cabot Microelectronics Corp.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20190319

Termination date: 20210617