JP2017530622A5 - - Google Patents

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Publication number
JP2017530622A5
JP2017530622A5 JP2017512790A JP2017512790A JP2017530622A5 JP 2017530622 A5 JP2017530622 A5 JP 2017530622A5 JP 2017512790 A JP2017512790 A JP 2017512790A JP 2017512790 A JP2017512790 A JP 2017512790A JP 2017530622 A5 JP2017530622 A5 JP 2017530622A5
Authority
JP
Japan
Prior art keywords
path
coupled
transistor
transistors
frequency band
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2017512790A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017530622A (ja
Filing date
Publication date
Priority claimed from US14/478,691 external-priority patent/US9369097B2/en
Application filed filed Critical
Publication of JP2017530622A publication Critical patent/JP2017530622A/ja
Publication of JP2017530622A5 publication Critical patent/JP2017530622A5/ja
Ceased legal-status Critical Current

Links

JP2017512790A 2014-09-05 2015-08-25 マルチバンド低雑音増幅器 Ceased JP2017530622A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/478,691 US9369097B2 (en) 2014-09-05 2014-09-05 Multi-band low noise amplifier
US14/478,691 2014-09-05
PCT/US2015/046724 WO2016036537A1 (en) 2014-09-05 2015-08-25 Multi-band low noise amplifier

Publications (2)

Publication Number Publication Date
JP2017530622A JP2017530622A (ja) 2017-10-12
JP2017530622A5 true JP2017530622A5 (enExample) 2018-09-20

Family

ID=54012351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017512790A Ceased JP2017530622A (ja) 2014-09-05 2015-08-25 マルチバンド低雑音増幅器

Country Status (6)

Country Link
US (1) US9369097B2 (enExample)
EP (1) EP3189588B1 (enExample)
JP (1) JP2017530622A (enExample)
KR (1) KR20170054387A (enExample)
CN (1) CN106797202B (enExample)
WO (1) WO2016036537A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2913922A1 (en) * 2014-02-28 2015-09-02 Telefonaktiebolaget L M Ericsson (publ) A low noise amplifier circuit
US11258407B2 (en) 2020-02-10 2022-02-22 Texas Instruments Incorporated Amplifier with improved isolation
CN112087206B (zh) * 2020-07-31 2021-07-27 成都天锐星通科技有限公司 一种超低功耗宽带低噪声放大器
KR20220085569A (ko) * 2020-12-15 2022-06-22 삼성전자주식회사 무선 통신 시스템에서 송수신 신호의 증폭 및 송수신 신호의 위상을 제어하기 위한 장치 및 방법
US11411596B1 (en) 2021-05-24 2022-08-09 Apple Inc. Transmit-receive switch with harmonic distortion rejection and electrostatic discharge protection

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3383042B2 (ja) * 1993-12-22 2003-03-04 株式会社東芝 差動入力回路
US6684065B2 (en) * 1999-12-20 2004-01-27 Broadcom Corporation Variable gain amplifier for low voltage applications
US6509796B2 (en) 2000-02-15 2003-01-21 Broadcom Corporation Variable transconductance variable gain amplifier utilizing a degenerated differential pair
US7459974B2 (en) * 2004-12-16 2008-12-02 Anadigics, Inc. System and method for distortion cancellation in amplifiers
US7400203B2 (en) * 2006-08-03 2008-07-15 Broadcom Corporation Circuit with Q-enhancement cell having feedback loop
US7689187B2 (en) 2007-03-01 2010-03-30 Motorola, Inc. Dual input low noise amplifier for multi-band operation
US20090104873A1 (en) 2007-10-18 2009-04-23 Broadcom Corporation Fully integrated compact cross-coupled low noise amplifier
US7541870B2 (en) 2007-10-18 2009-06-02 Broadcom Corporation Cross-coupled low noise amplifier for cellular applications
US7746169B2 (en) * 2008-02-06 2010-06-29 Qualcomm, Incorporated LNA having a post-distortion mode and a high-gain mode
US8086205B2 (en) 2008-05-02 2011-12-27 Infineon Technologies Ag Multimode receiver with active blocker suppression
US7834698B2 (en) * 2008-05-23 2010-11-16 Qualcomm Incorporated Amplifier with improved linearization
US8175566B2 (en) * 2009-06-04 2012-05-08 Qualcomm, Incorporated Multiple multi-mode low-noise amplifier receiver with shared degenerative inductors
US8102213B2 (en) 2009-07-23 2012-01-24 Qualcomm, Incorporated Multi-mode low noise amplifier with transformer source degeneration
US8570106B2 (en) * 2011-05-13 2013-10-29 Qualcomm, Incorporated Positive feedback common gate low noise amplifier
US8264281B1 (en) 2011-06-03 2012-09-11 Texas Instruments Incorporated Low-noise amplifier with tuned input and output impedances
US9543903B2 (en) 2012-10-22 2017-01-10 Qualcomm Incorporated Amplifiers with noise splitting
US9048928B2 (en) * 2012-11-13 2015-06-02 Qualcomm Incorporated Expandable transceivers and receivers
US9603187B2 (en) * 2012-11-14 2017-03-21 Qualcomm Incorporated Omni-band amplifiers
US8975968B2 (en) 2013-01-25 2015-03-10 Qualcomm Incorporated Amplifiers with improved isolation
US9059665B2 (en) 2013-02-22 2015-06-16 Qualcomm Incorporated Amplifiers with multiple outputs and configurable degeneration inductor
US9166731B2 (en) 2013-05-23 2015-10-20 Qualcomm Incorporated Transformer with integrated notch filter

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