CN101611555A - 调幅用环形天线输入电路及使用其的调幅无线电接收机 - Google Patents
调幅用环形天线输入电路及使用其的调幅无线电接收机 Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
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- H—ELECTRICITY
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- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q7/00—Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/16—Circuits
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Abstract
本发明涉及一种调幅用环形天线输入电路及使用其的调幅无线电接收机。使用p-MOSFET(21,22)作为放大来自环形天线(1)的输入信号的放大元件,通过使其与环形天线(1)直接连接,能通过p-MOSFET(21,22)以高阻抗接收来自环形天线(1)的输入信号,不需要用于变换成高阻抗的变压器等,同时,不需要提升环形天线(1)自身的阻抗,抑制电流性噪声发生。
Description
技术领域
本发明涉及一种AM(调幅)用环形天线输入电路及使用其的AM(调幅)无线电接收机,尤其适合用于使用环形天线作为天线的AM无线电接收机。
背景技术
作为在无线电接收机等广播信号接收装置中使用的天线,有环形天线。环形天线原理是通过卷绕导线多圈形成的线圈内部磁场变化取出感应电动势。例如,在家庭音响用的AM无线电接收机中,环形天线输入电路包括由一次侧线圈及与其电磁结合的二次侧线圈构成的同步变压器,以及并联连接在一次侧线圈上的变容二极管和电容器。
图1表示使用环形天线的以往的AM无线电接收机的构成局部。在图1中,101是环形天线,102是使用线圈的变压器,103是变容二极管,104是电容器,105是LNA(Low Noise Amplifier,低噪声放大器),106是对变容二极管103的控制电压的输入端子。
在环形天线101接收的高频信号(RF信号)之中,与变容二极管103一同形成的谐振电路谐振的同步频率的RF信号,由变压器102进行阻抗变换,供给LNA105。在LNA105中,RF信号以低噪声被放大,供给没有图示的下一段的频率变换器。
这样,在使用环形天线101的以往的AM无线电接收机中,使用变压器102及变容二极管103作为阻抗变换用。实行阻抗变换是由于环形天线101阻抗低(数百Ω),若保持该状态,同步效果小(不能取得高Q值),因此,有必要与变容元件取得阻抗匹配。
在使用偶极天线的车载用无线电接收机中,作为放大来自天线的输入信号的放大元件,使用场效应晶体管(FET)为人们所公知(例如参照专利文献1)。在该专利文献1记载的构成中,FET的漏极电流小时,阻抗变大。
专利文献1:特开平11-312937号公报
另外,在设有线圈型螺旋天线以及放大经变换的载波电力的信号放大电路的天线输入电路中,将信号放大电路作为输入阻抗高的差动放大电路,在两个晶体管中采用低噪声且高阻抗的FET技术(例如参照专利文献2)。
专利文献2:特开平10-13149号公报
但是,在使用环形天线的AM无线电接收机中,如上所述,环形天线阻抗低,同步效果小,因此,为了取得阻抗匹配,需要使用变压器等的同步电路。但是,变压器等难以内藏在IC芯片中,存在必须作为IC芯片外附零件构成的问题。为了使得不需要同步电路,也考虑提高环形天线阻抗的方法,但是,若那样,会产生电流性噪声增加的问题。
发明内容
本发明为解决这样的问题而作出,其目的在于,在AM无线电接收机的环形天线输入电路中,不会引起电流性噪声增加,能不需要使用变压器等的阻抗变换电路。
为了解决上述课题,在本发明中,调幅用环形天线输入电路将放大元件直接相对环形天线连接,使用低噪声、且输入阻抗高的场效应晶体管作为不取同步的放大元件。
另外,在本发明另一形态中,使用输入阻抗高的差动放大电路,作为使用放大元件的信号放大电路。
若按照上述那样构成的本发明,即使使用阻抗低的环形天线场合,也能以与其直接连接的阻抗高的场效应晶体管接收输入信号,因此,不需要用于变换成高阻抗的由变压器等构成的阻抗变换电路,能容易地使得天线输入电路的IC化。另外,也不需要提高环形天线自身的阻抗,因此,也能抑制电流性噪声发生。再有,由场效应晶体管构成的差动放大电路能减少噪声发生,有效地仅仅放大输入信号。
附图说明
图1表示使用环形天线的以往的AM无线电接收机的局部构成例。
图2表示使用本实施形态的环形天线输入电路的AM无线电接收机的主要部分构成例。
图3表示使用本实施形态的环形天线输入电路的AM无线电接收机的另一个主要部分构成例。
具体实施方式
下面,基于附图说明本发明的一实施形态。图2表示使用本实施形态的环形天线输入电路的AM无线电接收机的主要部分构成例。如图2所示,本实施形态的AM无线电接收机设有环形天线1以及与环形天线1直接连接的差动放大器2,作为其前端部(front end)的构成。其中,差动放大器2通过例如CMOS(Complementary Metal Oxide Semiconductor,互补性金属氧化物半导体)工艺规程或Bi-CMOS(Bipolar-CMOS,双极CMOS)工艺规程,集成化在一个IC芯片10上。
本实施形态的差动放大器2包括作为放大元件的两个p-MOSFET(场效应晶体管)21,22,连接在p-MOSFET21,22和电源Vcc之间的定电流源23,连接在p-MOSFET21,22和接地之间的两个电阻24,25构成。p-MOSFET21,22的栅极都与环形天线1连接。
这样,在本实施形态中,使用p-MOSFET21,22作为放大来自环形天线1的输入信号的放大元件,将其直接连接到环形天线1。另外,将p-MOSFET 21,22作为放大元件的信号放大电路由将该p-MOSFET21,22作为差动对的差动放大器2构成。
若按照上述构成的本实施形态的AM无线电接收机,可以通过p-MOSFET21,22以高阻抗接收来自环形天线1的输入信号。因此,不需要用于变换成高阻抗的变压器等,能容易地使得天线输入电路的IC化。另外,也不需要提高环形天线1自身的阻抗,因此,也能抑制电流性噪声发生。再有,作为放大元件的p-MOSFET21,22,以及使用其构成的差动放大器2能减少噪声发生,有效地仅仅放大输入信号。
在上述实施形态中,就使用p-MOSFET21,22作为放大元件的例子进行说明,但是,并不局限于此,也可以使用n-MOSFET。另外,差动放大器2优选噪声发生小、S/N良好的LNA。在使用p-MOSFET21,22场合,具有能更有效地减少闪烁的优点。
图3表示使用本实施形态的环形天线输入电路的AM无线电接收机的另一个主要部分构成例。图3所示的AM无线电接收机设有环形天线1以及与环形天线1直接连接的LNA3构成。其中,LNA3通过例如CMOS工艺规程或Bi-CMOS工艺规程,集成化在一个IC芯片10上。
LNA3包括作为放大元件的两个n-MOSFET31,32,连接在n-MOSFET31,32和电源Vcc之间的两个电阻33,34,连接在n-MOSFET31,32和接地之间的两个定电流源35,36,以及偏压电阻37构成。环形天线1与n-MOSFET31,32的漏极连接。另外,n-MOSFET31,32的栅极都通过偏压电阻37与接地连接。
这样,在通过栅极接地构成n-MOSFET31,32场合,IC芯片10的输入阻抗Zin与n-MOSFET31,32的电导gm的倒数大致相等,能简单化(Zin≈1/gm)。在本实施形态中,以例如CMOS工艺规程的FET构成n-MOSFET31,32,因此,电导gm变小,输入阻抗Zin变大。因此,通过调整偏压电阻37使得电导gm为合适值,能容易地实行与环形天线1的阻抗匹配(环形天线1具有的低阻抗向合适的高阻抗的变换)。
此外,上述实施形态哪个都不过是表示实施本发明时的具体化的一个示例,而非据此来对本发明的技术上的范围进行限定性地解释。即,本发明不脱离其精神或其主要特征,能够以各种各样的形式实施。
下面说明本发明的产业上的可利用性。
本发明能够用于例如使用环形天线、接收广播信号的广播信号接收装置,尤其,例如AM无线电接收机。
Claims (3)
1.一种调幅用环形天线输入电路,其特征在于:
将放大米自环形天线的输入信号的放大元件直接与上述环形天线连接,使用场效应晶体管作为上述放大元件。
2.按照权利要求1所述的调幅用环形天线输入电路,其特征在于:
上述放大元件是构成差动放大电路的差动对的场效应晶体管。
3.一种调幅无线电接收机,其特征在于:
该调幅无线电接收机包括:
环形天线;以及
半导体芯片内的信号放大电路,相对上述环形天线直接连接;
使用场效应晶体管作为构成上述信号放大电路的放大元件。
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JP260058/2006 | 2006-09-26 | ||
JP2006260058A JP2008085422A (ja) | 2006-09-26 | 2006-09-26 | Am用のループアンテナ入力回路およびこれを用いたamラジオ受信機 |
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US (1) | US20100003942A1 (zh) |
JP (1) | JP2008085422A (zh) |
CN (1) | CN101611555A (zh) |
TW (1) | TW200816622A (zh) |
WO (1) | WO2008038688A1 (zh) |
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US20100147210A1 (en) * | 2008-12-12 | 2010-06-17 | Soraa, Inc. | high pressure apparatus and method for nitride crystal growth |
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- 2007-09-19 CN CNA2007800351720A patent/CN101611555A/zh active Pending
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- 2007-09-19 WO PCT/JP2007/068740 patent/WO2008038688A1/ja active Application Filing
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JP2008085422A (ja) | 2008-04-10 |
US20100003942A1 (en) | 2010-01-07 |
WO2008038688A1 (fr) | 2008-04-03 |
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