JP2017511971A - 封止層を横切るサイドバリア層を有するビアを備える集積デバイス - Google Patents

封止層を横切るサイドバリア層を有するビアを備える集積デバイス Download PDF

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JP2017511971A
JP2017511971A JP2016550191A JP2016550191A JP2017511971A JP 2017511971 A JP2017511971 A JP 2017511971A JP 2016550191 A JP2016550191 A JP 2016550191A JP 2016550191 A JP2016550191 A JP 2016550191A JP 2017511971 A JP2017511971 A JP 2017511971A
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layer
implementations
substrate
integrated device
coupled
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Japanese (ja)
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JP2017511971A5 (enExample
Inventor
ジェ・シク・リー
ホン・ボク・ウィ
ドン・ウク・キム
シーチュン・グ
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クアルコム，インコーポレイテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
    • H01L2225/1017—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support
    • H01L2225/1023—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
    • H01L2225/1047—Details of electrical connections between containers
    • H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0655—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/1533—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Micromachines (AREA)
JP2016550191A 2014-02-13 2015-02-11 封止層を横切るサイドバリア層を有するビアを備える集積デバイス Ceased JP2017511971A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201461939523P 2014-02-13 2014-02-13
US61/939,523 2014-02-13
US14/274,517 US9466554B2 (en) 2014-02-13 2014-05-09 Integrated device comprising via with side barrier layer traversing encapsulation layer
US14/274,517 2014-05-09
PCT/US2015/015421 WO2015123301A1 (en) 2014-02-13 2015-02-11 Integrated device comprising via with side barrier layer traversing encapsulation layer

Publications (2)

Publication Number Publication Date
JP2017511971A true JP2017511971A (ja) 2017-04-27
JP2017511971A5 JP2017511971A5 (enExample) 2018-02-08

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JP2016550191A Ceased JP2017511971A (ja) 2014-02-13 2015-02-11 封止層を横切るサイドバリア層を有するビアを備える集積デバイス

Country Status (5)

Country Link
US (1) US9466554B2 (enExample)
EP (1) EP3105787B1 (enExample)
JP (1) JP2017511971A (enExample)
CN (1) CN105981166B (enExample)
WO (1) WO2015123301A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9343417B2 (en) 2013-09-18 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Hollow metal pillar packaging scheme
US9385110B2 (en) 2014-06-18 2016-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US9355963B2 (en) * 2014-09-26 2016-05-31 Qualcomm Incorporated Semiconductor package interconnections and method of making the same
TWI559829B (zh) * 2014-10-22 2016-11-21 矽品精密工業股份有限公司 封裝結構及其製法
US10651160B2 (en) * 2017-03-20 2020-05-12 Qualcomm Incorporated Low profile integrated package
CN114093770A (zh) * 2021-10-27 2022-02-25 珠海越亚半导体股份有限公司 埋嵌封装结构及其制作方法

Citations (7)

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US20100155920A1 (en) * 2008-12-24 2010-06-24 Samsung Electronics Co., Ltd. Stacked semiconductor package, semiconductor package module and method of manufacturing the stacked semiconductor package
JP2011238674A (ja) * 2010-05-07 2011-11-24 Seiko Epson Corp 配線基板、圧電発振器、ジャイロセンサー、配線基板の製造方法
JP2012119688A (ja) * 2010-12-02 2012-06-21 Samsung Electronics Co Ltd 積層パッケージ構造物、パッケージオンパッケージ素子、およびパッケージオンパッケージ素子製造方法
US20120168944A1 (en) * 2010-12-30 2012-07-05 Stmicroelectronics Pte Ltd. Through hole via filling using electroless plating
JP2012129262A (ja) * 2010-12-13 2012-07-05 Sumitomo Bakelite Co Ltd 半導体素子封止体の製造方法および半導体パッケージの製造方法
JP2013535834A (ja) * 2010-07-23 2013-09-12 テッセラ，インコーポレイテッド 組立て後に平坦化される超小型電子素子

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JP2005235860A (ja) * 2004-02-17 2005-09-02 Sanyo Electric Co Ltd 半導体装置及びその製造方法
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DE102007020266B3 (de) * 2007-04-30 2008-11-13 Advanced Micro Devices, Inc., Sunnyvale Halbleiterstruktur mit einem elektrisch leitfähigen Strukturelement und Verfahren zu ihrer Herstellung
JP5596919B2 (ja) * 2008-11-26 2014-09-24 キヤノン株式会社 半導体装置の製造方法
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Publication number Priority date Publication date Assignee Title
WO2010041630A1 (ja) * 2008-10-10 2010-04-15 日本電気株式会社 半導体装置及びその製造方法
US20100155920A1 (en) * 2008-12-24 2010-06-24 Samsung Electronics Co., Ltd. Stacked semiconductor package, semiconductor package module and method of manufacturing the stacked semiconductor package
JP2011238674A (ja) * 2010-05-07 2011-11-24 Seiko Epson Corp 配線基板、圧電発振器、ジャイロセンサー、配線基板の製造方法
JP2013535834A (ja) * 2010-07-23 2013-09-12 テッセラ，インコーポレイテッド 組立て後に平坦化される超小型電子素子
JP2012119688A (ja) * 2010-12-02 2012-06-21 Samsung Electronics Co Ltd 積層パッケージ構造物、パッケージオンパッケージ素子、およびパッケージオンパッケージ素子製造方法
JP2012129262A (ja) * 2010-12-13 2012-07-05 Sumitomo Bakelite Co Ltd 半導体素子封止体の製造方法および半導体パッケージの製造方法
US20120168944A1 (en) * 2010-12-30 2012-07-05 Stmicroelectronics Pte Ltd. Through hole via filling using electroless plating

Also Published As

Publication number Publication date
US9466554B2 (en) 2016-10-11
EP3105787B1 (en) 2021-08-25
CN105981166B (zh) 2019-04-16
WO2015123301A1 (en) 2015-08-20
US20150228556A1 (en) 2015-08-13
EP3105787A1 (en) 2016-12-21
CN105981166A (zh) 2016-09-28

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