JP2017504951A - プレーナ型異種デバイス - Google Patents
プレーナ型異種デバイス Download PDFInfo
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- JP2017504951A JP2017504951A JP2016526310A JP2016526310A JP2017504951A JP 2017504951 A JP2017504951 A JP 2017504951A JP 2016526310 A JP2016526310 A JP 2016526310A JP 2016526310 A JP2016526310 A JP 2016526310A JP 2017504951 A JP2017504951 A JP 2017504951A
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- 230000008569 process Effects 0.000 description 39
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- 125000006850 spacer group Chemical group 0.000 description 10
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 6
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- 208000036252 interstitial lung disease 1 Diseases 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 4
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 4
- 208000036971 interstitial lung disease 2 Diseases 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
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- 239000000853 adhesive Substances 0.000 description 3
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- 230000004888 barrier function Effects 0.000 description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
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- 230000008878 coupling Effects 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
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- 238000002161 passivation Methods 0.000 description 1
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H01L21/8232—Field-effect technology
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Abstract
Description
Claims (24)
- 第1の層の直上にある第2の層を備えた装置であって、
(a)前記第2の層は絶縁体層によって前記第1の層から分離された第1の部分と、前記第1の層の上にエピタキシャルに形成された第2の部分とを含み、
(b)前記第1の部分は前記第1の層の上にエピタキシャルに形成されてはおらず、
(c)前記第1の部分及び前記第2の部分は互いに格子不整合になっており、
(d)前記第1の層及び前記第2の層と平行な水平軸は、前記第1の部分及び前記第2の部分を通る、
装置。 - 前記第1の部分及び前記第2の部分は、IV族、III−V族、及びII−VI族を含む群からそれぞれ選択された第1の材料及び第2の材料をそれぞれ有する、
請求項1に記載の装置。 - 前記第1の部分及び前記第2の部分は両方とも、前記第1の層の直上にあり、前記第1の層は前記第2の材料を含む、
請求項2に記載の装置。 - 前記第1の部分及び前記第2の部分は両方とも、前記第1の層の直上にあり、
前記第1の層は、IV族、III−V族、及びII−VI族材料を含む群から選択された付加的材料を含み、
前記第2の材料は、前記付加的材料と格子不整合になっている、
請求項2又は3に記載の装置。 - 前記第1の部分及び前記第2の部分は、Nチャネルデバイス及びPチャネルデバイスを含む群からそれぞれ選択された、第1のデバイス及び第2のデバイスをそれぞれ含み、
前記第1のデバイスは前記第2のデバイスに対して逆極性である、
請求項2から4の何れか一項に記載の装置。 - 前記第1のデバイス及び前記第2のデバイスは、前記水平軸が通るチャネルをそれぞれ含む、
請求項5に記載の装置。 - 前記絶縁体は酸化物を含み、前記第1の部分は前記絶縁体と直接接触し、前記第1の層はIV族、III−V族、及びII−VI族材料を含む群から選択された付加的材料を含み、
前記第2の部分は、前記第1の層と直接接触する、
請求項2から6の何れか一項に記載の装置。 - 前記第1の部分は、前記装置に転写されており、前記装置の上に成長させられていない層を含む、
請求項2から7の何れか一項に記載の装置。 - 絶縁体部分は、前記第1の部分及び前記第2の部分の両方と直接接触し、
前記水平軸は、前記第1の部分及び前記第2の部分を通る、
請求項1から8の何れか一項に記載の装置。 - 前記第1の部分及び前記第2の部分のいずれとも直接接触するバッファを備えない、
請求項1から9の何れか一項に記載の装置。 - 前記第1の層及び前記第2の層の直下にある第3の層と、
前記第3の層と前記第1の層との間にある付加的絶縁体とを、
備え、
(a)前記第2の層は、前記絶縁体の直上にはない第3の部分を含み、
(b)前記第3の部分は、前記第3の層の上にエピタキシャルに形成され、
(c)前記第1の部分、前記第2の部分、及び前記第3の部分は互いに格子不整合になっており、
(d)前記水平軸は前記第3の部分を通る、
請求項1から10の何れか一項に記載の装置。 - 第3の層を備え、
(a)前記第2の層は、前記絶縁体の直上にはない第3の部分を含み、
(b)前記第3の部分は前記第3の層の上にエピタキシャルに形成され、
(c)前記第3の部分は、前記第1の部分及び前記第2の部分のうち少なくとも1つと格子不整合になっており、
(d)前記水平軸は前記第3の部分を通る
請求項1から11の何れか一項に記載の装置。 - 前記第1の部分の第1の側壁は不均一に鋸歯状になっている、
請求項1から12の何れか一項に記載の装置。 - 第1の層の直上にある第2の層を備え、
(a)前記第2の層は第1の部分及び第2の部分を含み、
(b)前記第1の部分は前記第1の層の上にエピタキシャルに形成されてはおらず、前記第2の部分は前記第1の層の上にエピタキシャルに形成されており、
(c)前記第1の部分及び前記第2の部分は互いに格子不整合になっており、
(d)前記第1の層及び前記第2の層と平行な水平軸は、前記第1の部分及び前記第2の部分を通り、
(e)前記第1の部分は前記第1の層と直接接触しない、
装置。 - 前記第1の部分及び前記第2の部分は、IV族及びIII−V族材料を含む群からそれぞれ選択された第1の材料及び第2の材料をそれぞれ含む、
請求項14に記載の装置。 - 前記第1の部分及び前記第2の部分は両方とも、前記第1の層の直上にあり、前記第1の層は前記第2の材料を含む、
請求項15に記載の装置。 - 前記第1の部分及び前記第2の部分は両方とも、前記第1の層の直上にあり、
前記第1の層は、IV族、III−V族、及びII−VI族材料を含む群から選択された付加的材料を含み、
前記第2の材料は前記付加的材料と格子不整合になっている、
請求項15又は16に記載の装置。 - 前記第1の部分及び前記第2の部分は、Nチャネルデバイス及びPチャネルデバイスを含む群からそれぞれ選択された第1のデバイス及び第2のデバイスをそれぞれ含み、
前記第1のデバイスは、前記第2のデバイスの第2のドレインに対して逆極性の第1のドレインを含む、
請求項15から17の何れか一項に記載の装置。 - 前記水平軸は、前記第1のドレイン及び前記第2のドレインを通る、
請求項18に記載の装置。 - 前記第1の部分は、前記装置に転写されていて、前記装置の上に成長させられていない層を含む、
請求項15から19の何れか一項に記載の装置。 - 第1の層を形成する段階と、
前記第1の層の上に第2の層を形成し、前記第1の層と前記第2の層との間には絶縁体を有し、前記第2の層は第1の部分を有する段階と、
前記第2の層を貫通するウェルを形成する段階と
前記第2の層に含まれる第2の部分を、前記第1の層の上且つ前記ウェルの中にエピタキシャルに形成する段階とを、
備え、
(a)前記第1の部分は前記第1の層の上にエピタキシャルに形成されておらず、
(b)前記第1の部分及び前記第2の部分は互いに格子不整合になっており、
(c)前記第1の層及び前記第2の層と平行な水平軸は、前記第1の部分及び前記第2の部分を通る、
方法。 - 前記第1の層の上に前記第2の層を形成する段階は、前記第2の層を基板から前記第1の層に転写する段階を有する、
請求項21に記載の方法。 - 前記基板を前記第2の層から削り取る、前記基板を前記第2の層から劈開する、前記基板を前記第2の層からエッチングすることのうち少なくとも1つによって、前記第2の層を前記基板から分離する段階を備える、
請求項22に記載の方法。 - Nチャネルデバイス及びPチャネルデバイスを含む群からそれぞれ選択された第1のデバイス及び第2のデバイスを、それぞれ前記第1の部分及び前記第2の部分に形成する段階を備え、
前記第1のデバイスは、前記第2のデバイスの第2のドレインに対して逆極性の第1のドレインを含む、
請求項21から23の何れか一項に記載の方法。
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