JP2017500725A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2017500725A5 JP2017500725A5 JP2016520685A JP2016520685A JP2017500725A5 JP 2017500725 A5 JP2017500725 A5 JP 2017500725A5 JP 2016520685 A JP2016520685 A JP 2016520685A JP 2016520685 A JP2016520685 A JP 2016520685A JP 2017500725 A5 JP2017500725 A5 JP 2017500725A5
- Authority
- JP
- Japan
- Prior art keywords
- solid
- layer
- flat
- surface portion
- flat surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007787 solid Substances 0.000 description 27
- 238000000926 separation method Methods 0.000 description 11
- 230000007547 defect Effects 0.000 description 9
- 239000011343 solid material Substances 0.000 description 5
- 230000000087 stabilizing effect Effects 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000004205 dimethyl polysiloxane Substances 0.000 description 3
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000012265 solid product Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- -1 Polydimethylsiloxane Polymers 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102013016666.7 | 2013-10-08 | ||
| DE102013016666 | 2013-10-08 | ||
| DE201410013107 DE102014013107A1 (de) | 2013-10-08 | 2014-09-03 | Neuartiges Waferherstellungsverfahren |
| DE102014013107.6 | 2014-09-03 | ||
| PCT/EP2014/071512 WO2015052220A1 (de) | 2013-10-08 | 2014-10-08 | Kombiniertes waferherstellungsverfahren mit laserbehandlung und temperaturinduzierten spannungen |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017500725A JP2017500725A (ja) | 2017-01-05 |
| JP2017500725A5 true JP2017500725A5 (enExample) | 2019-06-13 |
| JP6899653B2 JP6899653B2 (ja) | 2021-07-07 |
Family
ID=52693333
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016520685A Active JP6899653B2 (ja) | 2013-10-08 | 2014-10-08 | レーザー処理及び温度誘導ストレスを用いた複合ウェハー製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (5) | US10312135B2 (enExample) |
| EP (1) | EP3055098B1 (enExample) |
| JP (1) | JP6899653B2 (enExample) |
| KR (1) | KR102297306B1 (enExample) |
| CN (1) | CN105899325B (enExample) |
| DE (1) | DE102014013107A1 (enExample) |
| TW (2) | TWI685892B (enExample) |
| WO (1) | WO2015052220A1 (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102014013107A1 (de) * | 2013-10-08 | 2015-04-09 | Siltectra Gmbh | Neuartiges Waferherstellungsverfahren |
| DE102015000449A1 (de) | 2015-01-15 | 2016-07-21 | Siltectra Gmbh | Festkörperteilung mittels Stoffumwandlung |
| DE102014014420A1 (de) | 2014-09-29 | 2016-04-14 | Siltectra Gmbh | Kombiniertes Waferherstellungsverfahren mit einer Mehrkomponentenaufnahmeschicht |
| DE102014014422A1 (de) | 2014-09-29 | 2016-03-31 | Siltectra Gmbh | Kombiniertes Waferherstellungsverfahren mit einer Löcher aufweisenden Aufnahmeschicht |
| DE102015103118A1 (de) | 2014-10-06 | 2016-04-07 | Siltectra Gmbh | Splitting-Verfahren und Verwendung eines Materials in einem Splitting-Verfahren |
| US10930560B2 (en) | 2014-11-27 | 2021-02-23 | Siltectra Gmbh | Laser-based separation method |
| KR20200006641A (ko) | 2014-11-27 | 2020-01-20 | 실텍트라 게엠베하 | 재료의 전환을 이용한 고체의 분할 |
| CN107206544A (zh) | 2015-01-28 | 2017-09-26 | 西尔特克特拉有限责任公司 | 透明的并且高度稳定的显示屏保护件 |
| DE102015003369A1 (de) | 2015-03-16 | 2016-09-22 | Siltectra Gmbh | Transparenter und hochstabiler Displayschutz |
| DE102015006971A1 (de) | 2015-04-09 | 2016-10-13 | Siltectra Gmbh | Verfahren zum verlustarmen Herstellen von Mehrkomponentenwafern |
| CN105436710B (zh) | 2015-12-30 | 2019-03-05 | 大族激光科技产业集团股份有限公司 | 一种硅晶圆的激光剥离方法 |
| DE102016000051A1 (de) * | 2016-01-05 | 2017-07-06 | Siltectra Gmbh | Verfahren und Vorrichtung zum planaren Erzeugen von Modifikationen in Festkörpern |
| JP6654435B2 (ja) * | 2016-01-07 | 2020-02-26 | 株式会社ディスコ | ウエーハ生成方法 |
| WO2017162800A1 (de) * | 2016-03-24 | 2017-09-28 | Siltectra Gmbh | Polymer-hybrid-material zur verwendung in einem splitting-verfahren |
| US10978311B2 (en) * | 2016-12-12 | 2021-04-13 | Siltectra Gmbh | Method for thinning solid body layers provided with components |
| DE102017010284A1 (de) * | 2017-11-07 | 2019-05-09 | Siltectra Gmbh | Verfahren zum Dünnen von mit Bauteilen versehenen Festkörperschichten |
| JP6858586B2 (ja) * | 2017-02-16 | 2021-04-14 | 株式会社ディスコ | ウエーハ生成方法 |
| KR102551442B1 (ko) | 2017-04-20 | 2023-07-06 | 실텍트라 게엠베하 | 정의된 방향의 수정 라인으로 웨이퍼를 생산하는 방법 |
| DE102017007585A1 (de) * | 2017-08-11 | 2019-02-14 | Siltectra Gmbh | Vorrichtung und Verfahren zum Beaufschlagen von Spannungserzeugungsschichten mit Druck zum verbesserten Führen eines Abtrennrisses |
| DE102017119568B4 (de) | 2017-08-25 | 2024-01-04 | Infineon Technologies Ag | Siliziumkarbidbauelemente und Verfahren zum Herstellen von Siliziumkarbidbauelementen |
| DE102018003675A1 (de) | 2018-05-04 | 2019-11-07 | Siltectra Gmbh | Verfahren zum Abtrennen von Festkörperschichten von Kompositstrukturen aus SiC und einer metallischen Beschichtung oder elektrischen Bauteilen |
| US10940611B2 (en) | 2018-07-26 | 2021-03-09 | Halo Industries, Inc. | Incident radiation induced subsurface damage for controlled crack propagation in material cleavage |
| US12098476B2 (en) | 2019-08-06 | 2024-09-24 | Kwansei Gakuin Educational Foundation | Method for producing a SiC substrate via an etching step, growth step, and peeling step |
| JP7620217B2 (ja) | 2019-09-27 | 2025-01-23 | 学校法人関西学院 | ＳｉＣ半導体装置の製造方法及びＳｉＣ半導体装置 |
| EP4036285A4 (en) * | 2019-09-27 | 2023-10-25 | Kwansei Gakuin Educational Foundation | METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATES AND DEVICE FOR PRODUCING SEMICONDUCTOR SUBSTRATES |
| CN111545922B (zh) * | 2020-04-08 | 2022-07-12 | 山东天岳先进科技股份有限公司 | 一种碳化硅晶体的加工方法 |
| WO2022096064A1 (de) * | 2020-11-05 | 2022-05-12 | centrotherm international AG | Verfahren und system zum herstellen eines substrats |
| CN114311343B (zh) * | 2021-11-30 | 2024-10-22 | 盐城天合国能光伏科技有限公司 | 一种电池片切割装置 |
| TWI849565B (zh) * | 2022-11-07 | 2024-07-21 | 財團法人工業技術研究院 | 碳化矽錠裂片裝置與方法 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19640594B4 (de) | 1996-10-01 | 2016-08-04 | Osram Gmbh | Bauelement |
| US6392683B1 (en) | 1997-09-26 | 2002-05-21 | Sumitomo Heavy Industries, Ltd. | Method for making marks in a transparent material by using a laser |
| US6248649B1 (en) * | 1998-06-23 | 2001-06-19 | Silicon Genesis Corporation | Controlled cleavage process and device for patterned films using patterned implants |
| US6054370A (en) * | 1998-06-30 | 2000-04-25 | Intel Corporation | Method of delaminating a pre-fabricated transistor layer from a substrate for placement on another wafer |
| JP4659300B2 (ja) | 2000-09-13 | 2011-03-30 | 浜松ホトニクス株式会社 | レーザ加工方法及び半導体チップの製造方法 |
| US6886008B2 (en) | 2001-03-08 | 2005-04-26 | Technion Research & Development Foundation Ltd. | Machine learning by construction of a decision function |
| JP3762409B2 (ja) | 2002-03-12 | 2006-04-05 | 浜松ホトニクス株式会社 | 基板の分割方法 |
| US7749867B2 (en) | 2002-03-12 | 2010-07-06 | Hamamatsu Photonics K.K. | Method of cutting processed object |
| US7052978B2 (en) * | 2003-08-28 | 2006-05-30 | Intel Corporation | Arrangements incorporating laser-induced cleaving |
| JP4601965B2 (ja) | 2004-01-09 | 2010-12-22 | 浜松ホトニクス株式会社 | レーザ加工方法及びレーザ加工装置 |
| WO2005080645A2 (en) | 2004-02-13 | 2005-09-01 | Apollo Diamond, Inc. | Diamond structure separation |
| JP2006245498A (ja) * | 2005-03-07 | 2006-09-14 | Sharp Corp | 基板の製造方法およびその装置 |
| US20060240275A1 (en) * | 2005-04-25 | 2006-10-26 | Gadkaree Kishor P | Flexible display substrates |
| WO2007087354A2 (en) * | 2006-01-24 | 2007-08-02 | Baer Stephen C | Cleaving wafers from silicon crystals |
| JP5117692B2 (ja) | 2006-07-14 | 2013-01-16 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| EP2218098B1 (en) * | 2007-11-02 | 2018-08-15 | President and Fellows of Harvard College | Production of free-standing solid state layers by thermal processing of substrates with a polymer |
| US8138448B2 (en) * | 2007-12-31 | 2012-03-20 | International Business Machines Corporation | Negative coefficient thermal expansion engineered particles for composite fabrication |
| JP2010021398A (ja) * | 2008-07-11 | 2010-01-28 | Disco Abrasive Syst Ltd | ウェーハの処理方法 |
| EP2620409B1 (en) | 2008-12-23 | 2017-03-01 | Siltectra GmbH | Method for producing thin, free-standing layers of solid state materials with structured surfaces |
| JP5398332B2 (ja) * | 2009-04-16 | 2014-01-29 | 信越ポリマー株式会社 | 半導体ウェーハの製造方法及びその装置 |
| JP4979732B2 (ja) * | 2009-05-01 | 2012-07-18 | 信越化学工業株式会社 | 貼り合わせウェーハの製造方法 |
| CN101996943B (zh) * | 2009-08-18 | 2013-12-04 | 展晶科技(深圳)有限公司 | 材料层分离方法 |
| DE102010030358B4 (de) | 2010-06-22 | 2014-05-22 | Osram Opto Semiconductors Gmbh | Verfahren zum Abtrennen einer Substratscheibe |
| JP5950269B2 (ja) * | 2011-02-10 | 2016-07-13 | 国立大学法人埼玉大学 | 基板加工方法及び基板 |
| EP2562181A1 (en) | 2011-08-25 | 2013-02-27 | Universität Leipzig | Potent ligands of the ghrelin receptor |
| JP2015516672A (ja) * | 2012-02-26 | 2015-06-11 | ソレクセル、インコーポレイテッド | レーザ分割及び装置層移設のためのシステム及び方法 |
| DE102014013107A1 (de) * | 2013-10-08 | 2015-04-09 | Siltectra Gmbh | Neuartiges Waferherstellungsverfahren |
-
2014
- 2014-09-03 DE DE201410013107 patent/DE102014013107A1/de not_active Withdrawn
- 2014-10-08 WO PCT/EP2014/071512 patent/WO2015052220A1/de not_active Ceased
- 2014-10-08 TW TW107123523A patent/TWI685892B/zh active
- 2014-10-08 EP EP14781231.7A patent/EP3055098B1/de active Active
- 2014-10-08 KR KR1020167011993A patent/KR102297306B1/ko active Active
- 2014-10-08 CN CN201480055772.3A patent/CN105899325B/zh active Active
- 2014-10-08 TW TW103135024A patent/TWI637433B/zh active
- 2014-10-08 JP JP2016520685A patent/JP6899653B2/ja active Active
- 2014-10-08 US US15/028,332 patent/US10312135B2/en active Active
-
2019
- 2019-04-09 US US16/378,902 patent/US10593590B2/en active Active
-
2020
- 2020-02-18 US US16/793,429 patent/US11004723B2/en active Active
-
2021
- 2021-04-02 US US17/221,098 patent/US11699616B2/en active Active
-
2023
- 2023-05-26 US US18/202,698 patent/US20230307286A1/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2017500725A5 (enExample) | ||
| JP5568760B2 (ja) | レーザーによって脆い物質で作られた平行平面板を複数の個々のプレートに分割する方法及び装置 | |
| CN105665949B (zh) | 晶片的生成方法 | |
| TWI657496B (zh) | ＳｉＣ鑄錠之切片方法 | |
| TWI631665B (zh) | 光裝置之加工方法 | |
| TWI736760B (zh) | 晶圓加工方法 | |
| JP6899653B2 (ja) | レーザー処理及び温度誘導ストレスを用いた複合ウェハー製造方法 | |
| MY174538A (en) | Wafer processing method | |
| CN104816100B (zh) | 保持工作台 | |
| US9449878B2 (en) | Wafer processing method | |
| MY201423A (en) | Wafer producing method and laser processing apparatus | |
| CN105665947B (zh) | 晶片的生成方法 | |
| KR102062410B1 (ko) | 웨이퍼의 분할 방법 | |
| MX2021011784A (es) | Metodos de manufactura de documentos de seguridad y dispositivos de seguridad. | |
| MY187031A (en) | Sic wafer producing method | |
| TWI625778B (zh) | Wafer processing method | |
| TW201613710A (en) | Method and device for laser-based machining of planar, crystalline substrates, in particular of semiconductor substrates | |
| WO2016207277A8 (de) | Verfahren zum führen eines risses im randbereich eines spendersubstrats mit einem geneigten laserstrahl | |
| JP6699595B2 (ja) | 貫通孔を有するガラス基板 | |
| CN109425612B (zh) | 检查用晶片和能量分布的检查方法 | |
| CN105514036A (zh) | 晶片的加工方法 | |
| JP2016081990A (ja) | ウエーハの分割方法 | |
| JP2015173168A (ja) | チップ整列方法 | |
| MY194179A (en) | Semiconductor substrate processing method | |
| KR20160108183A (ko) | 디바이스 칩의 제조 방법 |