JP2017222932A - Intermediate of vapor deposition mask device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a vapor deposition mask device, capable of suppressing a vapor deposition mask from being deformed and improving the accuracy of vapor deposition patterning.SOLUTION: A method for manufacturing a vapor deposition mask device comprises: preparing a vapor deposition mask 50 having a protective film, which includes a sheet-like vapor deposition mask 20 including a metal base material 21 and a protective film 84 provided on one surface of the vapor deposition mask 20 and having transparency to a laser beam; placing the vapor deposition mask 50 having the protective film on a metal frame 15 so as to arrange the metal base material 21 on the side of the metal frame 15; irradiating the laser beam from the side of the protective film 84 to weld the metal base material 21 to the metal frame 15; and removing the protective film 84 from the vapor deposition mask 20.SELECTED DRAWING: Figure 22

Description

  The present invention relates to a method of manufacturing a vapor deposition mask apparatus in which a vapor deposition mask used to deposit a vapor deposition material on a substrate through a plurality of through holes provided in a desired pattern is attached to a metal frame. The present invention relates to a method for manufacturing a vapor deposition mask device that can suppress deformation of the vapor deposition mask and improve the patterning accuracy of vapor deposition. The present invention also relates to a deposition mask with a protective film including a deposition mask used for depositing a deposition material on a substrate through a plurality of through holes provided in a desired pattern, and more particularly, a modification of the deposition mask. It is related with the vapor deposition mask with a protective film which can suppress and improve the patterning precision of vapor deposition.

  Conventionally, a method of forming a thin film with a desired pattern using a mask for vapor deposition including through holes arranged in a desired pattern is known. In recent years, vapor deposition is sometimes used when a very expensive material is formed, for example, when an organic material is vapor-deposited on a substrate at the time of manufacturing an organic EL display device. In general, a mask for vapor deposition can be manufactured by forming a through hole in a metal plate by etching using a photolithography technique (for example, Patent Document 1).

  In the case where a deposition material is deposited on a substrate using a deposition mask, the deposition material is deposited on the substrate along the shape of the through holes, and pixels are formed on the substrate.

JP 2004-39319 A

  By the way, when vapor deposition material is vapor-deposited on a substrate using a vapor deposition mask, the vapor deposition mask is attached to the frame in a tensioned state. However, as described above, a large number of through holes are formed in the evaporation mask. Accordingly, depending on the shape and size of the through hole or the thickness of the vapor deposition mask, there is a possibility that the vapor deposition mask loaded with tension is deformed. In this case, it may be difficult to perform patterning of vapor deposition with high accuracy.

  The present invention has been made in view of the above points, and provides a method for manufacturing a vapor deposition mask apparatus capable of suppressing deformation of the vapor deposition mask and improving the patterning accuracy of vapor deposition, and a vapor deposition mask with a protective film. Objective.

The present invention
In a method of manufacturing a vapor deposition mask device having a metal frame and a vapor deposition mask provided on the metal frame,
Preparing a vapor deposition mask with a protective film having the sheet-like vapor deposition mask containing a metal substrate, and a protective film that is provided on one surface of the vapor deposition mask and has transparency to laser light;
Placing the deposition mask with the protective film on the metal frame so that the metal substrate is disposed on the metal frame side; and
Irradiating laser light from the protective film side and welding the metal base to the metal frame; and
After the step of welding the metal base material to the metal frame, the step of removing the protective film from the vapor deposition mask, and a method of manufacturing a vapor deposition mask device,
I will provide a.

  In the method of manufacturing a vapor deposition mask device according to the present invention, the protective film can be peeled off from the vapor deposition mask by irradiating UV light, and after the step of welding the metal substrate to the metal frame, the protection film Prior to the step of removing the film from the vapor deposition mask, the protective film may be irradiated with UV light.

  In the manufacturing method of the vapor deposition mask apparatus by this invention, the said protective film has a protective film base material and the adhesion layer provided in one side of the said protective film base material, The said adhesion layer is UV light. The adhesive strength may be reduced by irradiating with.

The present invention
In the vapor deposition mask with protective film welded to the metal frame of the vapor deposition mask device,
A sheet-like deposition mask containing a metal substrate;
A protective film provided on one surface of the vapor deposition mask,
The protective film has transparency to laser light,
When welding the vapor deposition mask with the protective film to the metal frame, the metal base is disposed on the metal frame and irradiated with laser light from the protective film, and the metal base is applied to the metal frame. A deposition mask with a protective film, which is welded,
I will provide a.

  In the vapor deposition mask with a protective film according to the present invention, the protective film may be peelable from the vapor deposition mask by irradiation with UV light.

  In the vapor deposition mask with a protective film according to the present invention, the protective film has a protective film substrate and an adhesive layer provided on one surface of the protective film substrate, and the adhesive layer emits UV light. You may make it the adhesive force fall by irradiating.

  ADVANTAGE OF THE INVENTION According to this invention, the deformation | transformation of a vapor deposition mask can be suppressed and the patterning precision of vapor deposition can be improved.

FIG. 1 is a schematic plan view illustrating an example of a vapor deposition mask apparatus including a vapor deposition mask, for explaining an embodiment of the present invention. FIG. 2 is a view for explaining a method of vapor deposition using the vapor deposition mask apparatus shown in FIG. FIG. 3 is a plan view showing the vapor deposition mask shown in FIG. FIG. 4 is a partially enlarged plan view of the vapor deposition mask shown in FIG. FIG. 5 is a view corresponding to a cross section taken along line I-I in FIG. 4, and is a cross-sectional view showing a deposition mask with a protective film. FIG. 6 is a cross-sectional view showing a state in which the vapor deposition mask with the protective film shown in FIG. 5 is welded to the frame of the vapor deposition mask device. FIG. 7 is a cross-sectional view illustrating a state where the second surface side protective film is peeled from the vapor deposition mask. FIG. 8 is a schematic diagram for entirely explaining an example of the manufacturing method of the vapor deposition mask shown in FIG. FIG. 9 is a view for explaining an example of a method for manufacturing a vapor deposition mask, and is a view showing a metal plate. FIG. 10 is a diagram for explaining an example of a method for manufacturing a vapor deposition mask, and is a diagram for explaining a process of forming a first resist layer and a second resist layer on a metal plate. FIG. 11 is a diagram for explaining an example of a method for manufacturing a vapor deposition mask, and is a diagram for explaining a process in which a resist layer is exposed. FIG. 12 is a diagram for explaining an example of a method for manufacturing a vapor deposition mask, and is a diagram for explaining a process of developing a resist layer. Drawing 13 is a figure for explaining an example of a manufacturing method of a vapor deposition mask, and is a figure for explaining a process in which the 1st surface side protection film is provided. FIG. 14 is a diagram for explaining an example of a method for manufacturing a vapor deposition mask, and is a diagram for explaining a process of etching a metal plate from the second surface side. FIG. 15 is a diagram for explaining an example of a method for manufacturing a vapor deposition mask, and is a diagram for explaining a process of removing the second resist layer. FIG. 16 is a diagram for explaining an example of a method for manufacturing a vapor deposition mask, and is a diagram for explaining a process in which a second surface side protective film is provided. FIG. 17 is a view for explaining an example of a method for manufacturing a vapor deposition mask, and is a view for explaining a process of removing the first surface side protective film. FIG. 18 is a diagram for explaining an example of a method for manufacturing a vapor deposition mask, and is a diagram for explaining a process in which a metal plate is etched from the first surface side. FIG. 19 is a view for explaining an example of a method for manufacturing a vapor deposition mask, and is a view for explaining a process of removing the first resist layer. FIG. 20 is a diagram for explaining an example of a method for manufacturing the vapor deposition mask device, and is a diagram for explaining a process of placing the vapor deposition mask with a protective film on the frame. FIG. 21 is a diagram for explaining an example of a method for manufacturing a vapor deposition mask device, and is a diagram for explaining a process of welding a vapor deposition mask with a protective film to a frame. FIG. 22 is a diagram for explaining an example of the manufacturing method of the vapor deposition mask device, and is a diagram for explaining a process of irradiating the protective film with UV light. FIG. 23 is a diagram for explaining an example of a method for manufacturing the vapor deposition mask device, and is a diagram for explaining a process of peeling the protective film from the vapor deposition mask. FIG. 24 is a diagram for explaining an example of a manufacturing method of the vapor deposition mask device, and is a diagram for explaining a process of trimming the vapor deposition mask. FIG. 25 is a view showing a modification of the vapor deposition mask shown in FIG. FIG. 26 is a cross-sectional view showing a modification of the vapor deposition mask with protective film shown in FIG.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the drawings attached to the present specification, for the sake of illustration and ease of understanding, the scale, the vertical / horizontal dimension ratio, and the like are appropriately changed and exaggerated from those of the actual product.

  FIGS. 1-24 is a figure for demonstrating one Embodiment by this invention. In the following embodiments and modifications thereof, in order to deposit an evaporation material such as an organic light emitting material on a glass substrate in a desired pattern through a plurality of through-holes described later when manufacturing an organic EL display device The vapor deposition mask used, the vapor deposition mask with protective film, the method for producing the vapor deposition mask, and the method for producing the vapor deposition mask device having the vapor deposition mask will be described as examples. However, without being limited to such application, the present invention can be applied to a vapor deposition mask, a vapor deposition mask with a protective film, a vapor deposition mask manufacturing method, and a vapor deposition mask device manufacturing method used for various applications. it can.

  In the present specification, the terms “plate”, “sheet”, and “film” are not distinguished from each other only based on the difference in names. For example, “a plate” is a concept that includes a member that can be called a sheet or a film. Therefore, for example, a “metal plate” is distinguished from a member called “a metal sheet” or “a metal film” only by a difference in the name. Can't be done.

  In addition, “plate surface (sheet surface, film surface)” means a target plate-like member (sheet-like) when the target plate-like (sheet-like, film-like) member is viewed as a whole and globally. It refers to the surface that coincides with the plane direction of the member or film-like member. Moreover, the normal direction used with respect to a plate-like (sheet-like, film-like) member refers to the normal direction with respect to the plate | board surface (sheet surface, film surface) of the said member.

  Furthermore, as used in this specification, the shape and geometric conditions and the degree thereof are specified. For example, terms such as “parallel”, “orthogonal”, “identical”, “concentric”, length and angle values, etc. Is not limited to the strict meaning and should be interpreted to include a range where a similar function can be expected.

  First, an example of a vapor deposition mask device including a vapor deposition mask to be a manufacturing method will be described mainly with reference to FIGS. Here, FIG. 1 is a schematic plan view showing an example of a vapor deposition mask device including a vapor deposition mask, FIG. 2 is a diagram for explaining a method of using the vapor deposition mask device shown in FIG. 1, and FIG. FIG. 2 is a plan view showing the vapor deposition mask shown in FIG. 1. FIG. 4 is a partially enlarged plan view of the vapor deposition mask, and FIG. 5 is a view corresponding to a cross section taken along the line II of FIG.

  The vapor deposition mask apparatus 10 shown in FIG. 1 and FIG. 2 has an opening 15 a, a metal frame (metal frame) 15 formed in a frame shape, and a vapor deposition mask on the opening 15 a of the frame 15. And a plurality of strip-shaped vapor deposition masks 20 arranged in parallel in 20 width directions (a direction perpendicular to the longitudinal direction, a lateral direction). Among these, the vapor deposition mask 20 has the metal plate 21 roughly formed in the sheet form (refer FIG. 5, FIG. 6). Such a vapor deposition mask 20 is provided with a large number of through holes 25. As shown in FIG. 2, the vapor deposition mask apparatus 10 is supported in the vapor deposition apparatus 90 so that the vapor deposition mask 20 faces a substrate, for example, a glass substrate 92, and a vapor deposition material for the glass substrate 92. Used for vapor deposition.

  In the vapor deposition apparatus 90, the glass substrate 92 is arrange | positioned in the opening part 15a of the flame | frame 15, and the vapor deposition mask 20 and the glass substrate 92 come to closely_contact | adhere by the magnetic force from a magnet not shown. In the vapor deposition apparatus 90, a crucible 94 for accommodating a vapor deposition material (for example, an organic light emitting material) 98 and a heater 96 for heating the crucible 94 are disposed below the glass substrate 92 sandwiching the vapor deposition mask apparatus 10. Has been. The vapor deposition material 98 in the crucible 94 is vaporized or sublimated by heating from the heater 96 and adheres to the surface of the glass substrate 92. As described above, a large number of through holes 25 are formed in the vapor deposition mask 20, and the vapor deposition material 98 adheres to the glass substrate 92 through the through holes 25. As a result, the vapor deposition material 98 is formed on the surface of the glass substrate 92 in a desired pattern corresponding to the position of the through hole 25 of the vapor deposition mask 20.

  As shown in FIGS. 1 and 3, in the present embodiment, the vapor deposition mask 20 has a substantially quadrangular shape in a band shape in plan view, more precisely, a substantially rectangular shape in a band shape in plan view. The vapor deposition mask 20 includes a plurality of effective regions 22 arranged in the longitudinal direction of the vapor deposition mask 20 and formed with a plurality of through holes 25 in a regular arrangement, and surrounding regions 23 surrounding each effective region 22. Yes. Of these, the surrounding region 23 is not a region through which a deposition material intended to be deposited on the substrate passes. For example, in the vapor deposition mask 20 used for vapor deposition of the organic light emitting material for the organic EL display device, the effective region 22 is a region on the substrate (glass substrate 92) where the organic light emitting material is deposited to form a pixel. That is, it is a region in the vapor deposition mask 20 that faces an area on the substrate that forms the display surface of the produced substrate for the organic EL display device. However, through holes and recesses may be formed in the peripheral region 23 for various purposes. In the example shown in FIG. 1, each effective region 22 has a substantially rectangular shape in plan view, more precisely, a substantially rectangular shape in plan view.

  In the illustrated example, the plurality of effective regions 22 are arranged at predetermined intervals along the longitudinal direction of the vapor deposition mask 20. The vapor deposition mask 20 including such a plurality of effective regions 22 is arranged in the width direction to constitute the vapor deposition mask device 10 shown in FIG. One effective area 22 corresponds to one organic EL display device, and the deposition mask device 10 shown in FIG.

  As shown in FIG. 4, in the illustrated example, the plurality of through holes 25 formed in each effective region 22 are arranged at predetermined pitches along two directions orthogonal to each other in the effective region 22. Yes. FIG. 4 shows an example in which each through-hole 25 has a substantially rectangular shape in a plan view, more precisely, a substantially rectangular outline in a plan view. More specifically, a base material hole 30 to be described later has a substantially quadrangular or substantially rectangular outline in plan view, and one base material hole 30 is formed in each through hole 25.

  An example of the through hole 25 formed in the vapor deposition mask 20 will be described in more detail with reference mainly to FIGS. 4 and 5.

  FIG. 4 is a partial plan view showing the vapor deposition mask 20 from the first surface 20a side. FIG. 5 is a view corresponding to a cross section taken along line II of FIG.

  As shown in FIGS. 4 and 5, the vapor deposition mask 20 includes a metal plate (metal substrate) 21 including a first surface 21 a and a second surface 21 b provided on the opposite side of the first surface 21 a. Have. The 2nd surface 21b of the metal plate 21 is arrange | positioned at the glass substrate 92 side at the time of vapor deposition (namely, when attached in the vapor deposition apparatus 90).

  The metal plate 21 can be formed of 36% Ni invar material, and the thickness of the metal plate 21 is preferably 10 μm to 100 μm, for example.

  The plurality of through holes 25 include a first surface 20a that is one side along the normal direction of the vapor deposition mask 20 and a second surface 20b that is the other side along the normal direction of the vapor deposition mask 20. It extends between. That is, the through hole 25 penetrates the vapor deposition mask 20.

In the illustrated example, the base plate hole 30 is provided in the metal plate 21 as will be described in detail later.
That is, the base material hole 30 is formed in the metal plate 21 by etching from the first surface 21a side of the metal plate 21 which is one side in the normal direction of the vapor deposition mask 20. The substrate hole 30 forms a through hole 25.

  As shown in FIG. 5, vapor deposition is performed from one side to the other side in the normal direction of the vapor deposition mask 20, that is, from the first surface 20a side to the second surface 20b side of the vapor deposition mask 20. The cross-sectional area of each base material hole 30 in the cross section along the plate surface of the vapor deposition mask 20 at each position along the normal direction of the mask 20 gradually decreases. In other words, in the cross section along the normal direction of the vapor deposition mask 20, the width of each substrate hole 30 along the plate surface of the vapor deposition mask 20 at each position along the normal direction of the vapor deposition mask 20 is the vapor deposition mask 20. The size gradually decreases from the first surface 20a side toward the second surface 20b side. In particular, in the illustrated example, the cross-sectional area of each substrate hole 30 continues to change so as to decrease from the first surface 20a side of the vapor deposition mask 20 toward the second surface 20b side.

  As shown in FIG. 5, the through hole 25 is defined by a taper base material hole 30 formed from the first surface 20 a side of the vapor deposition mask 20. As shown in FIGS. 4 and 5, in the illustrated example, one base hole 30 is formed for each through hole 25.

  As shown in FIG. 5, the wall surface 31 of the base material hole 30 and the second surface 21 b of the metal plate 21 are connected via a circumferential connection portion 41. The connecting portion 41 is defined by a merge line where the wall surface 31 of the base material hole 30 inclined with respect to the normal direction of the vapor deposition mask and the second surface 21b merge. And the connection part 41 defines the penetration part 42 in which the area of the through-hole 25 in planar view of the vapor deposition mask 20 becomes the smallest in the area | region of the metal plate 21. FIG.

  As shown in FIG. 5, two adjacent through holes 25 are separated from each other along the plate surface of the vapor deposition mask 20 on the first surface 20 a of the vapor deposition mask 20. That is, when the substrate hole 30 is formed by etching the metal plate 21 from the first surface 21a side of the metal plate 21 corresponding to the first surface 20a of the vapor deposition mask 20, as in the manufacturing method described later. The first surface 21 a of the metal plate 21 remains between the two adjacent base material holes 30.

  Since the two adjacent through-holes 25 are separated from each other along the plate surface of the vapor deposition mask 20, the strength of the vapor deposition mask can be improved. Thereby, when the vapor deposition mask 20 is stretched on the frame 15, the deformation of the vapor deposition mask 20 within the effective region 22 can be effectively suppressed, thereby effectively performing vapor deposition in a desired pattern. Can be implemented. Further, in this case, a large number of through holes 25 are formed during handling processing such as conveyance and cutting of the long metal plate 71 described later, removal of the second surface side protective film 84 described later, and attachment to the frame 15. The deformation of the region 22 can be effectively suppressed.

  When the vapor deposition mask device 10 is accommodated in the vapor deposition device 90 as shown in FIG. 2, the first surface 20 a of the metal plate 21 of the vapor deposition mask 20 holds the vapor deposition material 98 as shown by a two-dot chain line in FIG. 5. The second surface 20 b of the metal plate 21 faces the glass substrate 92 and is located on the crucible 94 side. Therefore, the vapor deposition material 98 adheres to the glass substrate 92 through the base material hole 30 whose cross-sectional area is gradually reduced.

  The base material hole 30 is formed by etching the first surface 21a of the metal plate 21, as will be described in detail later. The wall surface of the hole (or recess) formed by etching generally has a curved surface that is convex toward the erosion direction. Therefore, the wall surface of the hole formed by the etching is cut off in the region which is the etching start side, and the normal line of the metal plate 21 is formed in the region opposite to the etching start side, that is, the deepest side of the hole. It becomes relatively large with respect to the direction.

  As described above, in the present embodiment, the through holes 25 are arranged in a predetermined pattern in each effective region 22. As an example, when the vapor deposition mask 20 (vapor deposition mask device 10) is used to produce a display (about 2 to 5 inches) such as a mobile phone or a digital camera, the arrangement pitch P of the through holes 25 is 58 μm (440 ppi). The thickness can be about 254 μm (100 ppi) or less. In addition, when performing color display, the vapor deposition mask 20 (vapor deposition mask apparatus 10) and the glass substrate 92 are relatively moved little by little along the direction in which the through holes 25 are arranged, so that the organic light emitting material for red color is used. The organic light emitting material for green and the organic light emitting material for blue may be deposited in order. Further, when the vapor deposition mask 20 (vapor deposition mask device 10) is used for manufacturing a display of a mobile phone, the width (slit width) W along the direction in which the through holes 25 are arranged is 28 μm or more and 84 μm or less. Can be about.

  Next, the vapor deposition mask 50 with a protective film will be described.

  As shown in FIG. 5, the vapor deposition mask 50 with the protective film includes the vapor deposition mask 20 described above and the second surface side protective film 84 attached to the second surface 20 b of the vapor deposition mask 20. Thus, by sticking the 2nd surface side protective film 84 to the vapor deposition mask 20, the deformation | transformation of the vapor deposition mask 20, especially the deformation | transformation of the effective area | region 22 in which many through-holes 25 are formed is suppressed effectively. Can do.

  As will be described later, the second surface side protective film 84 is attached to the second surface 21b after the metal plate 21 is etched from the second surface 21b side to form the base material recess 35 (see FIG. 14). After that, it is preferable to form the base material hole 30 by etching the metal plate 21 from the first surface 21a side with the second surface side protective film 84 attached. That is, when the base material hole 30 is formed, depending on the shape or size of the through hole 25, there is a possibility that the effective region 22 is deformed during the handling process as described above. However, the deformation | transformation of the effective area | region 22 can be effectively suppressed by affixing the 2nd surface side protective film 84 before forming the base material hole 30. FIG.

The second surface side protective film 84 preferably has etching resistance against an etching solution (for example, ferric chloride aqueous solution) for etching the long metal plate 71 described later.
As a result, when forming the substrate hole 30 during the production of the vapor deposition mask 20 described later, the already formed substrate recess 35 is sealed by the second surface side protective film 84 and the substrate recess 35 is etched. It can prevent that the shape of the base-material recessed part 35 is impaired.

  As shown in FIG. 6, the 2nd surface side protective film 84 has the protective film base material 84a and the adhesion layer 84b provided in one surface of the protective film base material 84a. Among these, the adhesive layer 84 b is adhered to the second surface 21 b of the metal plate 21, and the second surface side protective film 84 is attached to the vapor deposition mask 20. It is preferable that the 2nd surface side protective film 84 can be peeled from the metal plate 21 by irradiating UV light L4 (refer FIG. 22). That is, the second surface side protective film 84 cannot be peeled off from the metal plate 21 during the etching process or the like until it is irradiated with UV light, but can be easily peeled off from the metal plate 21 after being irradiated with UV light. It is preferable to become. Specifically, it is preferable that the adhesive layer 84b is formed of a material whose adhesive strength is reduced when irradiated with UV light. In this case, the second surface side protective film 84 can be easily peeled from the vapor deposition mask 20 by irradiating the second surface side protective film 84 attached to the vapor deposition mask 20 with UV light. In addition, as a material of the protective film base material 84a, what is necessary is just a material which has the intensity | strength of the grade which can suppress that the effective area | region 22 of the vapor deposition mask 20 deform | transforms at the time of handling processing, for example, mentions polyethylene terephthalate (PET). Can do. Further, as described above, the material of the adhesive layer 84b may be a material whose adhesive strength is reduced by irradiating UV light, and examples thereof include acrylic materials.

  Furthermore, it is preferable that the second surface side protective film 84 has transparency to the YAG laser light L1 (see FIG. 6). In this case, as will be described later, the vapor deposition mask 20 (the vapor deposition mask 50 with the protective film) to which the second surface side protective film 84 is attached is applied to the frame 15 of the vapor deposition mask apparatus 10 from the laser light irradiation unit 85 to the YAG laser. Spot welding can be performed by irradiating the light L1.

  The vapor deposition mask 20 to which the second surface side protective film 84 as described above is attached is arranged in parallel on the opening 15 a of the frame 15 of the vapor deposition mask device 10 and attached to the frame 15. The frame 15 holds the vapor deposition mask in a stretched state so as to prevent the vapor deposition mask 20 from being bent. In this case, as shown in FIGS. 2 and 6, the first surface 21 a of the metal plate 21 of the vapor deposition mask 20 is located on the crucible 94 side holding the vapor deposition material 98.

  The vapor deposition mask 20 and the frame 15 are fixed to each other, for example, by spot welding. That is, as shown in FIG. 6, the YAG laser beam L1 is irradiated from the laser beam irradiation unit 85 provided on the second surface side protective film 84 side toward the frame 15, and the irradiated YAG laser beam L1 is the first A welded portion 86 is formed on the metal plate 21 and the frame 15 by the energy of the YAG laser beam L1 through the two-surface-side protective film 84.

  The second surface side protective film 84 is peeled from the metal plate 21 as shown in FIG. 7 by being irradiated with UV light after being welded. Accordingly, the vapor deposition mask 20 to which the second surface side protective film 84 is not attached is attached to the frame 15. Then, the vapor deposition mask apparatus 10 is attached to the vapor deposition apparatus 90 shown in FIG.

  In addition, the vapor deposition mask apparatus 10 is hold | maintained inside the vapor deposition apparatus 90 used as a high temperature atmosphere. Therefore, the vapor deposition mask 20 and the frame 15 are preferably formed of the same material having a low coefficient of thermal expansion in order to prevent the vapor deposition mask 20 and the frame 15 from being bent or generating thermal stress. As such a material, for example, a 36% Ni invar material can be used.

  According to the vapor deposition mask 50 with the protective film as described above, since the second surface side protective film 84 attached to the vapor deposition mask 20 has transparency to the laser beam, the second surface side protection is performed. By irradiating laser light from the film 84 side, the metal plate 21 of the vapor deposition mask 20 can be welded to the frame 15 of the vapor deposition mask device 10. Moreover, the 2nd surface side protective film 84 can support the effective area | region 22 in which many through-holes 25 were formed by affixing on the vapor deposition mask 20. FIG. As a result, the vapor deposition mask 20 can be welded to the frame 15 while effectively suppressing the deformation of the effective area 22 of the vapor deposition mask 20, and the vapor deposition material 98 can be accurately patterned on the glass substrate 92. .

  Next, the manufacturing method of such a vapor deposition mask 20 and the manufacturing method of the vapor deposition mask apparatus 10 are mainly demonstrated using FIGS.

  FIG. 8 shows a manufacturing apparatus 60 for manufacturing the vapor deposition mask 20. As shown in FIG. 8, first, a wound body 62 in which a long metal plate 71 is wound around a supply core 61 is prepared. Then, when the supply core 61 rotates and the wound body 62 is rewound, a long metal plate 71 extending in a strip shape is supplied as shown in FIG. The through-hole 25 is formed in the long metal plate 71, and the second surface side protective film 84 is attached to the long metal plate 71. After that, the sheet-like protective film-equipped deposition mask 50 is obtained. Therefore, as described above, the long metal plate 71 is made of, for example, 36% Ni invar material. However, the sheet is not limited to this, and a sheet made of stainless steel, copper, iron, or aluminum can be used as the long metal plate 71.

  The long metal plate 71 is unwound from the wound body 62 by the transport roller 65 (see FIG. 9) and transported to the etching device (etching means) 64. Each process shown in FIGS. 10 to 19 is performed by the etching means 64.

  First, as shown in FIG. 10, the first resist layer 81 is formed on the first surface 71 a of the long metal plate 71, and the second resist layer 82 is formed on the second surface 71 b of the long metal plate 71. It is formed. Specifically, a dry film resist (for example, AQ-185 manufactured by Asahi Kasei) is laminated on the first surface 71a and the second surface 71b of the long metal plate 71 as a photosensitive resist material. In this way, the first resist layer 81 is formed on the first surface 71 a of the long metal plate 71, and the second resist layer 82 is formed on the second surface 71 b of the long metal plate 71. The resist layers 81 and 82 can also be formed by applying and curing a liquid photosensitive resist.

Next, as shown in FIGS. 11 and 12, the first resist layer 81 and the second resist layer 82 are exposed and developed. In this case, first, a first glass dry plate (first exposure mask) 67 and a second glass dry plate (second exposure mask) 68 that prevent light from being transmitted to the regions to be removed of the resist layers 81 and 82 are prepared. . Subsequently, the first glass dry plate 67 is disposed above the first resist layer 81, and the second glass dry plate 68 is disposed below the second resist layer 82. At this time, the first glass dry plate 67 and the second glass dry plate 68 are aligned with each other. Next, the exposure light L2 is irradiated, the 1st resist layer 81 is exposed through the 1st glass dry plate 67, and the 2nd resist layer 82 is exposed through the 2nd glass dry plate 68 (refer FIG. 11). . At this time, it is preferable that the first resist layer 81 and the second resist layer 82 are exposed simultaneously.
Thereafter, the first resist layer 81 and the second resist layer 82 are developed using a sodium carbonate solution (see FIG. 12). As a result, the unexposed regions of the resist layers 81 and 82 are removed, and the first resist layer openings 81a are formed in the first resist layer 81 in a desired pattern. A second resist layer opening 82a is formed in a desired pattern. At this time, the first resist layer opening 81a has a planar shape corresponding to the planar shape of the base material hole 30 formed in the metal plate 21 of the vapor deposition mask 20, and the second resist layer opening 82a is a vapor deposition mask. It has a planar shape corresponding to the planar shape of the substrate recess 35 (see FIG. 14) formed in the 20 metal plates 21. Thereafter, the first resist layer 81 and the second resist layer 82 are baked (cured).

  Here, an example in which the first resist layer 81 and the second resist layer 82 are negative resists is described. However, the present invention is not limited to this, and a positive resist may be used for these resist layers 81 and 82.

  Subsequently, as shown in FIG. 13, a first surface side protective film 83 that covers the first surface 71 a and the first resist layer 81 is attached to the first surface 71 a of the long metal plate 71. The first surface side protective film 83 preferably has resistance to the etching solution used in the following steps, and is used for the first surface 71a of the long metal plate 71 in the following steps. It is preferable that the etching liquid is attached so as not to enter. This can prevent the first surface 71a of the long metal plate 71 and the first resist layer 81 from being etched. In addition, the 1st surface side protective film 83 is the same as the 2nd surface side protective film 84, and the adhesion layer (all are not shown) provided in the one surface of the protective film base material. , And the same material as the second surface side protective film 84 can be used.

  Next, as shown in FIG. 14, the long metal plate 71 is etched from the second surface 71b side. In this case, the long metal plate 71 is etched from the second surface 71b side of the long metal plate 71 by the sprayed etchant (for example, ferric chloride solution) using the second resist layer 82 as a mask. As a result, as shown in FIG. 14, the long metal plate 71 is etched through the second resist layer opening 82 a, and the base material recess 35 is formed on the second surface 71 b side of the long metal plate 71. . That is, erosion by the etchant proceeds in the region of the second resist layer opening 82a in the long metal plate 71. As described above, a large number of base material recesses 35 are formed in the long metal plate 71 from the second surface 71b side. The erosion by the etching solution does not proceed only in the normal direction (thickness direction) of the long metal plate 71 but also proceeds in the direction along the plate surface of the long metal plate 71 from the second resist layer opening 82a. For this reason, the outline of the substrate recess 35 on the second surface 71b of the long metal plate 71 in plan view is larger than the outline of the second resist layer opening 82a.

  In addition, the cross-sectional area of each base material recess 35 in the cross section along the plate surface of the vapor deposition mask 20 at each position along the normal direction of the vapor deposition mask 20 is one from the other side in the normal direction of the vapor deposition mask 20. In other words, it gradually decreases from the second surface 20b side of the vapor deposition mask 20 toward the first surface 20a side. In other words, in the cross section along the normal direction of the vapor deposition mask 20, the width of each substrate recess 35 along the plate surface of the vapor deposition mask 20 at each position along the normal direction of the vapor deposition mask 20 is the vapor deposition mask 20. The size gradually decreases from the second surface 20b side toward the first surface 20a side. In particular, in the illustrated example, the cross-sectional area of each substrate recess 35 continues to change so as to decrease from the second surface 20b side of the vapor deposition mask 20 toward the first surface 20a side. Note that the base material recess 35 preferably has a shape similar to that of the corresponding base material hole 30 (in the present embodiment, a substantially rectangular shape or a substantially rectangular outline) in plan view.

Next, as shown in FIG. 15, the second resist layer 82 is removed from the long metal plate 71.
The second resist layer 82 can be removed by, for example, an alkaline release agent.

  Thereafter, as shown in FIG. 16, the second surface side protective film 84 is affixed on the second surface 71 b of the long metal plate 71. As a result, the second-surface-side protective film 84 covers the base material recess 35 formed as described above. That is, the base material recessed part 35 is sealed with the 2nd surface side protective film 84 which has the etching resistance with respect to etching liquid. The second surface side protective film 84 is preferably resistant to an etching solution for etching the long metal plate 71 and is used for the second surface 71b of the long metal plate 71 in the following steps. It is preferable that the etching solution is stuck so as not to enter.

  Subsequently, as shown in FIG. 17, the first surface side protective film 83 attached to the first surface 71 a of the long metal plate 71 is peeled (removed). Thus, since the 1st surface side protective film 83 peels after the 2nd surface side protective film 84 is affixed, the elongate metal plate 71 is protected by the 1st surface side protective film 83 or the 2nd surface side protection. It can be supported by the film 84, and the deformation of the effective area 22 can be suppressed.

  Next, as shown in FIG. 18, the second etching is performed on the long metal plate 71, and the long metal plate 71 is etched from the first surface 71a side. In this case, the long metal plate 71 is etched from the first surface 71a side of the long metal plate 71 by the sprayed etchant (for example, ferric chloride aqueous solution) using the first resist layer 81 as a mask. . As a result, as shown in FIG. 18, the first surface 71 a of the long metal plate 71 is etched through the first resist layer opening 81 a, and the base material hole 30 is formed in the long metal plate 71. That is, erosion by the etching solution proceeds in the region of the first resist layer opening 81a. In this manner, a large number of substrate holes 30 are formed in the long metal plate 71 from the first surface 71a side. The erosion by the etching solution does not proceed only in the normal direction (thickness direction) of the long metal plate 71 but also proceeds in the direction along the plate surface of the long metal plate 71 from the first resist layer opening 81a. For this reason, the outline of the substrate hole 30 on the first surface 71a of the long metal plate 71 in plan view is larger than the outline of the first resist layer opening 81a.

  The etching from the first surface 71 a side is performed until the base material hole 30 formed by the etching reaches the second surface side protective film 84. Thereby, the through hole 25 defined by the base material hole 30 is formed. At this time, the base material hole 30 is formed so as to include the base material recess 35, and the base material recess 35 does not remain.

  Moreover, the precision of the shape of the base material hole 30 can be improved by performing the 2nd time etching from the 1st surface 71a side after forming the base material recessed part 35 as mentioned above. That is, when the base material hole 30 is formed by etching from the first surface 71a side without forming the base material recess 35, when the base material hole 30 reaches the second surface side protective film 84, the base material The hole 30 rapidly expands in the direction along the plate surface of the vapor deposition mask 20, and the shape accuracy of the base material hole 30 may be impaired. However, by forming the base material recess 35 in advance on the second surface 71b side as in the present embodiment, the base material hole 30 formed from the first surface 71a side by etching is first formed on the base surface. It reaches the material recess 35 and then reaches the second surface side protective film 84. Thereby, it is possible to suppress the base material hole 30 from rapidly expanding in the direction along the plate surface of the vapor deposition mask 20. For this reason, the precision of the shape of the base material hole 30 can be improved.

  In addition, since the 2nd surface side protective film 84 is affixed on the 2nd surface 71b side of the elongate metal plate 71, it does not etch from the 2nd surface 71b side of the elongate metal plate 71. FIG. . Further, even when the base material hole 30 is connected to the base material recess 35 by the progress of etching from the first surface 71a side, the base material recess 35 is sealed by the second surface side protective film 84. The etching solution is prevented from flowing from the substrate hole 30 through the substrate recess 35. For this reason, it can prevent that the base material hole 30 is etched excessively, and can make the shape of each base material hole 30 uniform.

  In this way, the etching from the first surface 71a side of the long metal plate 71 proceeds by a preset amount, and the second etching for the long metal plate 71 is completed. Thereby, the through-hole 25 defined by the base material hole 30 is formed in the long metal plate 71.

Thereafter, as shown in FIG. 19, the first resist layer 81 is removed from the long metal plate 71.
The first resist layer 81 can be removed using, for example, an alkaline release agent.

  As shown in FIG. 8, the long metal plate 71 to which the second surface side protective film 84 in which a large number of through holes 25 are formed is attached sandwiched the long metal plate 71 as described above. It is conveyed to the cutting device (cutting means) 66 by the conveying rollers 65 and 65 rotating in the state. In the cutting device 66, the long metal plate 71 is cut into a predetermined length. In this way, the vapor deposition mask 50 with a sheet-like protective film is obtained. The supply core 61 described above is rotated via the tension acting on the long metal plate 71 by the rotation of the transport rollers 65 and 65 so that the long metal plate 71 is supplied from the wound body 62. It has become.

  As described above, the vapor deposition mask 20 in which many through holes 25 are formed, and the vapor deposition mask 20 (the vapor deposition mask 50 with the protective film) to which the second surface side protective film 84 is attached is obtained.

  Next, the obtained vapor deposition mask 50 with a protective film is attached to the frame 15.

  In this case, first, as shown in FIG. 20, the vapor deposition mask 50 with the protective film is placed on the frame 15 so that the metal plate 21 is disposed on the frame 15 side (see FIG. 6). As a result, the metal plate 21 comes into contact with the frame 15. At this time, a plurality of vapor deposition masks 50 with a protective film are placed on the frame 15.

  Next, as shown in FIG. 21, the vapor deposition mask 50 with a protective film is welded to the frame 15. In this case, first, tension is applied to the vapor deposition mask 50 with the protective film placed on the frame 15 by the tension load portion 87, and the vapor deposition mask 50 with the protective film is held in a stretched state. Thereby, it can suppress that the vapor deposition mask 50 with a protective film bends. Subsequently, the metal plate 21 of the vapor deposition mask 20 is welded to the frame 15. Specifically, as shown in FIGS. 6 and 21, the YAG laser beam L <b> 1 is irradiated toward the frame 15 from the laser beam irradiation unit 85 provided on the second surface side protective film 84 side. The irradiated YAG laser light L 1 passes through the second surface side protective film 84 and reaches the metal plate 21 and the frame 15. As a result, portions of the metal plate 21 and the frame 15 that are irradiated with the YAG laser light L1 are melted, and a welded portion 86 is formed. In this way, the metal plate 21 and the frame 15 of the vapor deposition mask 20 are welded.

  After the metal plate 21 of the vapor deposition mask 20 is attached to the frame 15, the UV light irradiation unit 88 provided on the second surface side protective film 84 side is changed to the second surface side protective film 84 as shown in FIG. The UV light L4 is irradiated toward the target. Thereby, the adhesive force of the adhesion layer 84b of the 2nd surface side protective film 84 can be reduced.

  After the irradiation with the UV light L4, the second surface side protective film 84 is peeled (removed) from the metal plate 21 of the vapor deposition mask 20, as shown in FIG. Thereby, the vapor deposition mask 20 from which the 2nd surface side protective film 84 was removed from the vapor deposition mask 50 with a protective film is obtained.

  Thus, the vapor deposition mask apparatus 10 shown in FIG. 1 is obtained.

  Thereafter, as shown in FIG. 24, the vapor deposition mask 20 is trimmed. Specifically, a portion of the vapor deposition mask 20 that protrudes from the frame 15 is cut off. This protruding portion is a portion that is gripped by the tension loading means 87 (see FIG. 21) when tension is applied to the vapor deposition mask 50 with the protective film. The protruding portions correspond to the upper end portion and the lower end portion of the vapor deposition mask 20 protruding from the frame 15 in the embodiment shown in FIG.

  By attaching the vapor deposition mask device 10 obtained as described above to the vapor deposition device 90 (see FIG. 2), it becomes possible to deposit the vapor deposition material 98 on the glass substrate 92.

  According to the method of manufacturing the vapor deposition mask device according to the present embodiment as described above, after the base material recess 35 is formed on the second surface 71 b side of the long metal plate 71, the first metal plate 71 has the first. Before the base material hole 30 is formed on the side of the surface 71a, the second surface side protective film 84 is attached to the second surface 21b of the metal plate 21, and the vapor deposition mask 50 with the protective film can be obtained. Accordingly, the long metal plate 71 in which the base material hole 30 is formed can be supported by the second surface side protective film 84, and deformation of the effective region 22 in which many through holes 25 are formed can be suppressed. In particular, when the second surface side protective film 84 is removed after being welded to the frame 15 of the vapor deposition mask device 10, it is possible to effectively suppress deformation of the effective region 22 of the vapor deposition mask 20 under tension. it can. For this reason, the patterning precision of vapor deposition can be improved.

  Moreover, according to the manufacturing method of the vapor deposition mask apparatus by this Embodiment, since the 2nd surface side protective film 84 affixed on the vapor deposition mask 20 has the transmittance | permeability with respect to a laser beam, it is 2nd. The metal plate 21 of the vapor deposition mask 20 can be spot-welded to the frame 15 of the vapor deposition mask device 10 by irradiating laser light from the surface side protective film 84 side. For this reason, it is possible to weld the vapor deposition mask 20 to the frame 15 while effectively suppressing deformation of the effective area 22 of the vapor deposition mask 20, and to pattern the vapor deposition material 98 on the glass substrate 92 with high accuracy. .

  As mentioned above, although embodiment of this invention was described in detail, the vapor deposition mask by this invention, the vapor deposition mask with a protective film, the manufacturing method of a vapor deposition mask, and the manufacturing method of a vapor deposition mask apparatus are limited to the said embodiment at all. However, various modifications are possible without departing from the spirit of the present invention.

  Moreover, the pattern of the through-hole 25 formed in the vapor deposition mask 20 is not restricted to the form shown by FIG. The arrangement pattern of the through holes 25 shown in FIG. 4 is merely an example, and the through holes 25 may be arranged in various patterns.

  Further, the shape of the through hole 25 is not limited to the planar shape shown in FIG. For example, as shown in FIG. 26, each through-hole 25 has a belt-like substantially rectangular shape in plan view, more precisely a belt-like substantially rectangular contour in plan view, or a slit-like elongated contour. May be. In this case, the base material hole 30 has a belt-like substantially rectangular shape in plan view, more precisely a belt-like substantially rectangular shape or a slit-like long and narrow outline, and the elongated through-hole 25 has a base. The material holes 30 are formed one by one. In this case, each through hole 25 is preferably formed so as to extend in the longitudinal direction of the vapor deposition mask 20, in other words, in the direction in which the tension is applied by the tension loading means 87. Note that the cross section taken along the line II in FIG. 25 corresponds to the cross section taken along the line II in FIG.

  Further, in the present embodiment described above, an example in which two adjacent through holes 25 are separated from each other along the plate surface of the vapor deposition mask 20 on the first surface 20a of the vapor deposition mask 20 has been described. . However, the present invention is not limited to this, and two adjacent through holes 25 may be connected to each other as shown in FIG.

  In the example shown in FIG. 26, the tip edges (upper edges, edges located on one side along the normal direction of the vapor deposition mask) 32 of the wall surfaces 31 of all the substrate holes 30 in the effective region 22 are Preferably, it joins with the front end edge 32 of the wall surface 31 of the other base material hole 30 adjacent to the base material hole 30 over the entire circumference.

  Here, in the entire region within the effective region 22 of the vapor deposition mask 20, the first surface 20a of the vapor deposition mask 20 is formed by the wall surface 31 of the base material hole 30 facing one side in the normal direction of the vapor deposition mask. Yes. As a result, the first surface 20 a of the vapor deposition mask 20 forms an uneven surface in the entire region within the effective region 22 of the vapor deposition mask 20.

According to such a vapor deposition mask 20, the inclination angle θ ₁ formed by the wall surface 31 of the base material hole 30 with respect to the normal direction of the vapor deposition mask can be effectively increased in the entire effective region 22. That is, in the cross section of FIG. 26 orthogonal to the sheet surface of the vapor deposition mask 20, the connection portion 41 that is a portion having the minimum cross-sectional area of the through hole 25 and any other position of the wall surface 31 of the base material hole 30. The minimum angle θ ₁ formed by the passing straight line X with respect to the normal direction of the vapor deposition mask 20 can be made sufficiently large, thereby improving the utilization efficiency of the vapor deposition material 98 and improving the desired efficiency. Vapor deposition in a pattern can be stably performed with high accuracy.

  When the base plate hole 30 is produced by etching the metal plate 21 from the first surface 21 a side of the metal plate 21 that corresponds to the first surface 20 a of the deposition mask 20, the effective region 22 of the deposition mask 20. In the entire region of the metal plate 21 that forms the above, the first surface 21a of the metal plate 21 is eroded by etching. That is, the maximum thickness Ta in the effective region 22 along the normal direction of the vapor deposition mask is less than 100% of the maximum thickness Tb in the surrounding region 23 along the normal direction of the vapor deposition mask. Thus, it is preferable from the viewpoint of improving the utilization efficiency of the vapor deposition material that the thickness in the effective region 22 is generally reduced. On the other hand, from the viewpoint of the strength of the vapor deposition mask, the maximum thickness Ta in the effective region 22 along the normal direction of the vapor deposition mask is 50 of the maximum thickness Tb in the surrounding region 23 along the normal direction of the vapor deposition mask. % Or more is preferable. When the maximum thickness Ta in the effective area 22 is 50% or more of the maximum thickness Tb in the surrounding area 23, the effective area 22 of the evaporation mask 20 when the evaporation mask 20 is stretched on the frame 15 is used. Therefore, it is possible to effectively suppress vapor deposition in a desired pattern. Further, in this case, the deformation of the effective region 22 in which a large number of through holes 25 are formed during handling processing such as conveyance and cutting of the long metal plate 71, removal of the second surface side protective film 84, and attachment to the frame 15. Can be effectively prevented.

Furthermore, in the illustrated example, due to the manufacturing method described above, the outer side of the portion 33 where the tip edges 32 of the wall surfaces 31 of the two substrate holes 30 meet in the cross section along the normal direction of the vapor deposition mask. The contour has a chamfered shape. As described above, generally, the wall surface of the hole formed by etching has a curved surface shape that is convex toward the main traveling direction by etching.
Therefore, when the two base material holes 30 formed by etching are simply partially overlapped, as shown by a two-dot chain line in FIG. 26, the joining portion 33 is the normal line of the evaporation mask serving as the etching start side. It becomes a pointed shape toward one side along the direction. On the other hand, in the illustrated vapor deposition mask 20, the sharp portion in the merging portion 33 is chamfered. As can be understood from FIG. 26, the chamfering can effectively increase the above-described angle θ ₁ formed by the wall surface 31 with respect to the normal line direction of the vapor deposition mask 20. Thereby, the utilization efficiency of the vapor deposition material 98 can be improved more effectively, and vapor deposition with a desired pattern can be carried out with high accuracy and stability.

  As a result, in the cross section along the normal direction of the vapor deposition mask, the outer contour of the portion 33 where the tip edges 32 of the wall surfaces 31 of the two base material holes 30 meet is the one along the normal direction of the vapor deposition mask. It becomes a curved shape that bulges toward the side.

  In the step of forming the base material hole 30 shown in FIG. 26, when the etching proceeds, a joining portion 33 formed by joining two adjacent base material holes 30 is separated from the first resist layer 81, and the first resist layer 81 is separated. Etching due to etching also proceeds in the normal direction (thickness direction) of the long metal plate 71 in the merged portion 33 below the resist layer 81. Thereby, the merging portion 33 sharpened toward one side along the normal direction of the vapor deposition mask is etched and chamfered from one side along the normal direction of the vapor deposition mask. At this time, the joining portion 33 is separated from the first resist layer 81, so that the first resist layer 81 in the effective region 22 can be removed.

20 vapor deposition mask 20a first surface 20b second surface 21 metal plate 21a first surface 21b second surface 25 through hole 30 substrate hole 31 wall surface 35 substrate recess 36 wall surface 50 vapor deposition mask with protective film 71 long metal plate 71a first 1st surface 71b 2nd surface 81 1st resist layer 81a 1st resist layer opening part 82 2nd resist layer 82a 2nd resist layer opening part 83 1st surface side protective film 84 2nd surface side protective film 85 Laser beam irradiation part 86 Welding section 87 Tension load section 88 UV light irradiation section

Claims (6)

In a method of manufacturing a vapor deposition mask device having a metal frame and a vapor deposition mask provided on the metal frame,
Preparing a vapor deposition mask with a protective film having the sheet-like vapor deposition mask containing a metal substrate, and a protective film that is provided on one surface of the vapor deposition mask and has transparency to laser light;
Placing the deposition mask with the protective film on the metal frame so that the metal substrate is disposed on the metal frame side; and
Irradiating laser light from the protective film side and welding the metal base to the metal frame; and
And a step of removing the protective film from the vapor deposition mask after the step of welding the metal substrate to the metal frame. The protective film is peelable from the vapor deposition mask by irradiating with UV light,
The UV light is applied to the protective film after the step of welding the metal substrate to the metal frame and before the step of removing the protective film from the vapor deposition mask. The manufacturing method of the vapor deposition mask apparatus of description. The protective film has a protective film substrate, and an adhesive layer provided on one surface of the protective film substrate,
The method for manufacturing a vapor deposition mask device according to claim 2, wherein the adhesive layer has an adhesive force that decreases when irradiated with UV light. In the vapor deposition mask with protective film welded to the metal frame of the vapor deposition mask device,
A sheet-like deposition mask containing a metal substrate;
A protective film provided on one surface of the vapor deposition mask,
The protective film has transparency to laser light,
When welding the vapor deposition mask with the protective film to the metal frame, the metal base is disposed on the metal frame and irradiated with laser light from the protective film, and the metal base is applied to the metal frame. A vapor deposition mask with a protective film, which is welded.   The said protective film can be peeled from the said vapor deposition mask by irradiating UV light, The vapor deposition mask with a protective film of Claim 4 characterized by the above-mentioned. The protective film has a protective film substrate, and an adhesive layer provided on one surface of the protective film substrate,
The vapor deposition mask with a protective film according to claim 5, wherein the adhesive layer has a reduced adhesive strength when irradiated with UV light.

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