JP2014133934A - Vapor deposition mask manufacturing method and vapor deposition mask - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vapor deposition mask capable of preventing wrinkles.SOLUTION: A vapor deposition mask 20 comprises: plural effective regions 22 which are aligned in a longitudinal direction of the vapor deposition mask 20 and on each of which plural through holes 25 are formed; and a stress relaxation region 50 interposed between the adjacent effective regions 22 and relaxing longitudinal stress of the vapor deposition mask 20. The stress relaxation region 50 has a stress relaxation recess 51 provided on a first face 20a of the vapor deposition mask 20.

Description

  The present invention relates to a method of manufacturing a vapor deposition mask used for performing vapor deposition with a desired pattern, and more particularly to a method of manufacturing a vapor deposition mask that can prevent formation of wrinkles. The present invention also relates to a vapor deposition mask used for vapor deposition in a desired pattern, and more particularly to a vapor deposition mask that can prevent wrinkles from being formed.

  2. Description of the Related Art Conventionally, a method of forming a thin film with a desired pattern using a deposition mask including through holes arranged in a desired pattern is known. In recent years, vapor deposition is sometimes used when a very expensive material is formed, for example, when an organic material is vapor-deposited on a substrate at the time of manufacturing an organic EL display device. In general, a deposition mask can be manufactured by forming a through hole in a metal plate by etching using a photolithography technique (for example, Patent Document 1).

  When a vapor deposition material is formed on a substrate using a vapor deposition mask, some vapor deposition materials move toward a direction that is largely inclined with respect to the direction normal to the vapor deposition mask and face the substrate. In order to effectively use the vapor deposition material that moves obliquely and increase the utilization efficiency of the vapor deposition material, it is preferable to reduce the thickness of the vapor deposition mask.

JP 2004-39319 A

  By the way, when forming a vapor deposition material on a substrate using a belt-shaped vapor deposition mask, a plurality of vapor deposition masks are arranged in parallel on the opening of the frame. At this time, the frame holds the vapor deposition mask in tension by applying tension to the vapor deposition mask so that the vapor deposition mask does not bend. However, as described above, when the thickness of the vapor deposition mask is reduced, the vapor deposition mask cannot withstand tension, and wrinkles in the same direction as the tension can be formed in the vapor deposition mask. That is, the central region of the vapor deposition mask is shrunk in the width direction by this tension, whereby wrinkles along the longitudinal direction can be formed. In this case, there is a problem that the position of the pixel formed by vapor deposition of the vapor deposition material is shifted. In addition, when a vapor deposition mask is manufactured, wrinkles can be formed by the tension applied to the vapor deposition mask when a long metal plate that has been unwound from the wound body and etched is conveyed.

  The present invention has been made in view of such points, and an object thereof is to provide a method for manufacturing a vapor deposition mask and a vapor deposition mask that can prevent the formation of wrinkles.

The method of manufacturing a vapor deposition mask according to the present invention includes
A strip-shaped deposition mask, which is a method of manufacturing a deposition mask having a plurality of effective regions arranged in the longitudinal direction of the deposition mask and each having a plurality of through holes formed therein.
Preparing a metal plate having a first surface and a second surface facing each other;
Forming, in the region of the metal plate that forms the effective region, an effective recess that defines the through hole from the first surface side, and
In the step of forming the effective recess, stress relaxation is performed in the region of the metal plate that is interposed between the effective regions adjacent to each other and forms a stress relaxation region that relaxes the stress in the longitudinal direction of the vapor deposition mask. A recess is formed from the first surface side.

  In the deposition mask manufacturing method according to the present invention, in the step of forming the effective recess, the stress relaxation recess may be formed to extend in a width direction of the deposition mask.

  In the method of manufacturing a vapor deposition mask according to the present invention, the method further comprises a step of forming a second effective recess that is connected to the effective recess and forms the through hole from the second surface side. In the step of forming, a second stress relaxation recess may be formed from the second surface side in the region of the metal plate that forms the stress relaxation region.

  In the deposition mask manufacturing method according to the present invention, in the step of forming the second effective recess, the second stress relaxation recess is formed to extend in a width direction of the deposition mask, and the stress relaxation recess and the second You may make it a stress relaxation recessed part arrange | position alternately by the longitudinal direction of the said vapor deposition mask in planar view.

  In the vapor deposition mask manufacturing method according to the present invention, a high rigidity region having higher rigidity than the effective region and the stress relaxation region may be formed between the effective region and the stress relaxation region.

The vapor deposition mask according to the present invention comprises:
A strip-shaped deposition mask having a first surface and a second surface facing each other,
A plurality of effective areas arranged in the longitudinal direction of the vapor deposition mask, each having a plurality of through holes,
A stress relaxation region that is interposed between the effective regions adjacent to each other and relaxes the stress in the longitudinal direction of the vapor deposition mask,
The stress relaxation region has a stress relaxation recess provided in the first surface.

  In the vapor deposition mask according to the present invention, the stress relaxation recess may extend in a width direction of the vapor deposition mask.

  In the vapor deposition mask according to the present invention, a second stress relaxation recess may be provided on the second surface of the vapor deposition mask.

  In the vapor deposition mask according to the present invention, the second stress relaxation recesses extend in a width direction of the vapor deposition mask, and the stress relaxation portions and the second stress relaxation portions are alternately arranged in a longitudinal direction of the vapor deposition mask in a plan view. It may be made to be.

  The vapor deposition mask according to the present invention may further include a high-rigidity region interposed between the effective region and the stress relaxation region and having higher rigidity than the effective region and the stress relaxation region.

  ADVANTAGE OF THE INVENTION According to this invention, the vapor deposition mask which can prevent that a wrinkle is formed is provided.

FIG. 1 is a schematic plan view illustrating an example of a vapor deposition mask apparatus including a vapor deposition mask, for explaining an embodiment of the present invention. FIG. 2 is a view for explaining a method of vapor deposition using the vapor deposition mask apparatus shown in FIG. FIG. 3 is a plan view showing the vapor deposition mask shown in FIG. FIG. 4 is a partially enlarged plan view of the vapor deposition mask shown in FIG. FIG. 5 is a cross-sectional view taken along the line II of FIG. FIG. 6 is a schematic diagram for entirely explaining an example of the manufacturing method of the vapor deposition mask shown in FIG. FIG. 7 is a view for explaining an example of a method for manufacturing a vapor deposition mask, and is a view showing a long metal plate in a cross section along a normal direction. FIG. 8 is a view for explaining an example of a method of manufacturing a vapor deposition mask, and is a view showing a long metal plate in a cross section along the normal direction. FIG. 9 is a view for explaining an example of a method for manufacturing a vapor deposition mask, and is a view showing a long metal plate in a cross section along the normal direction. FIG. 10 is a diagram for explaining an example of a method for manufacturing a vapor deposition mask, and is a diagram illustrating a long metal plate in a cross section along a normal direction. FIG. 11 is a diagram for explaining an example of a method for manufacturing a vapor deposition mask, and is a diagram showing a long metal plate in a cross section along the normal direction. FIG. 12 is a diagram corresponding to FIG. 4 and illustrating a modification of the stress relaxation region. 13 is a cross-sectional view taken along line II-II in FIG. FIG. 14 is a view for explaining an example of a method for manufacturing the vapor deposition mask of FIG. 13, and is a view showing a long metal plate in a cross section along the normal direction.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the drawings attached to the present specification, for the sake of illustration and ease of understanding, the scale, the vertical / horizontal dimension ratio, and the like are appropriately changed and exaggerated from those of the actual product.

  FIGS. 1-11 is a figure for demonstrating one Embodiment by this invention. In the following embodiments and modifications thereof, a method for manufacturing a vapor deposition mask used for patterning an organic light emitting material on a glass substrate in a desired pattern when manufacturing an organic EL display device will be described as an example. . However, the present invention is not limited to such an application, and the present invention can be applied to a vapor deposition mask used for various purposes and a method for manufacturing the vapor deposition mask.

  In the present specification, the terms “plate”, “sheet”, and “film” are not distinguished from each other only based on the difference in names. For example, “a plate” is a concept that includes a member that can be called a sheet or a film. Therefore, for example, a “metal plate” is distinguished from a member called “a metal sheet” or “a metal film” only by a difference in the name. Cannot be done.

  In addition, “plate surface (sheet surface, film surface)” means a target plate-like member (sheet-like) when the target plate-like (sheet-like, film-like) member is viewed as a whole and globally. It refers to the surface that coincides with the plane direction of the member or film-like member. Moreover, the normal direction used with respect to a plate-like (sheet-like, film-like) member refers to the normal direction with respect to the plate | board surface (sheet surface, film surface) of the said member.

  Furthermore, as used in this specification, the shape and geometric conditions and the degree thereof are specified. For example, terms such as “parallel”, “orthogonal”, “identical”, length and angle values, etc. Without being bound by meaning, it should be interpreted including the extent to which similar functions can be expected.

  First, an example of a vapor deposition mask apparatus including a vapor deposition mask to be a manufacturing method will be described mainly with reference to FIGS. Here, FIG. 1 is a schematic plan view showing an example of a vapor deposition mask device including a vapor deposition mask, FIG. 2 is a diagram for explaining a method of using the vapor deposition mask device shown in FIG. 1, and FIG. FIG. 2 is a plan view showing the vapor deposition mask shown in FIG. 1. 4 is a partially enlarged plan view of the vapor deposition mask, and FIG. 5 is a cross-sectional view of FIG.

  The vapor deposition mask apparatus 10 shown in FIG. 1 and FIG. 2 has an opening 15a, a frame 15 formed in a frame shape, and the width direction (longitudinal direction) of the vapor deposition mask 20 on the opening 15a of the frame 15. And a plurality of strip-shaped vapor deposition masks 20 arranged in parallel in the orthogonal direction and the lateral direction). Among these, the vapor deposition mask 20 is provided with a large number of through holes 25 formed by etching the metal plate 21 having the first surface 21a and the second surface 21b facing each other from at least the first surface 21a. As shown in FIG. 2, the vapor deposition mask device 10 is supported in a vapor deposition device 90 so that the vapor deposition mask 20 faces a substrate, for example, a glass substrate 92, and vapor deposition of vapor deposition material onto the substrate. Used for.

  In the vapor deposition apparatus 90, the glass substrate 92 is arrange | positioned in the opening part 15a of the flame | frame 15, and the vapor deposition mask 20 and the glass substrate 92 come to closely_contact | adhere by the magnetic force from a magnet not shown. In the vapor deposition apparatus 90, a crucible 94 for accommodating a vapor deposition material (for example, an organic light emitting material) 98 and a heater 96 for heating the crucible 94 are disposed below the glass substrate 92 sandwiching the vapor deposition mask apparatus 10. Has been. The vapor deposition material 98 in the crucible 94 is vaporized or sublimated by heating from the heater 96 and adheres to the surface of the glass substrate 92. As described above, a large number of through holes 25 are formed in the vapor deposition mask 20, and the vapor deposition material 98 adheres to the glass substrate 92 through the through holes 25. As a result, the vapor deposition material 98 is formed on the surface of the glass substrate 92 in a desired pattern corresponding to the position of the through hole 25 of the vapor deposition mask 20.

  As shown in FIGS. 1 and 3, in the present embodiment, the vapor deposition mask 20 is made of a metal plate 21, and has a belt-like substantially square shape in plan view, more precisely, a belt-like substantially rectangular outline in plan view. have. The metal plate 21 of the vapor deposition mask 20 is arranged in the longitudinal direction of the vapor deposition mask 20, a plurality of effective regions 22 each having a plurality of through holes 25 formed in a regular arrangement, and a surrounding region surrounding each effective region 22. 23. Of these, the surrounding region 23 is not a region through which a deposition material intended to be deposited on the substrate passes. For example, in the vapor deposition mask 20 used for vapor deposition of the organic light emitting material for the organic EL display device, the effective region 22 is a region on the substrate (glass substrate 92) where the organic light emitting material is deposited to form a pixel. That is, it is a region in the vapor deposition mask 20 that faces an area on the substrate that forms the display surface of the produced substrate for the organic EL display device. However, through holes and recesses may be formed in the peripheral region 23 for various purposes. In the example shown in FIG. 1, each effective region 22 has a substantially rectangular shape in plan view, more precisely, a substantially rectangular shape in plan view.

  As shown in FIG. 3, the surrounding region 23 includes a stress relaxation region 50 that relieves stress in the longitudinal direction of the vapor deposition mask 20, and a high rigidity region 55 that is more rigid than the effective region 22 and the stress relaxation region 50. Yes. Among these, the stress relaxation region 50 is interposed between the effective regions 22 adjacent to each other, and when tension is applied to the vapor deposition mask 20 in the longitudinal direction, the stress generated by this tension is effectively relaxed. It has become.

  The high rigidity region 55 is interposed between the effective region 22 and the stress relaxation region 50. More specifically, the high rigidity region 55 is formed so as to surround the effective region 22 and the stress relaxation region 50, respectively. Further, the high-rigidity region 55 is a region where neither the first surface 21a nor the second surface 21b of the metal plate 21 is etched. On the other hand, in the effective region 22 and the stress relaxation region 50, as will be described later, at least one of the first surface 21a and the second surface 21b of the metal plate 21 is etched to remove a part of the material of the metal plate 21. It has become an area. Thus, the high rigidity region 55 has higher rigidity than the effective region 22 and the stress relaxation region 50, and has a function of supporting the effective region 22 and effectively suppressing deformation of the effective region 22. doing.

  In the illustrated example, the plurality of effective regions 22 are arranged at predetermined intervals along the longitudinal direction of the vapor deposition mask 20. The vapor deposition mask 20 including such a plurality of effective regions 22 is arranged in the width direction to constitute the vapor deposition mask device 10 shown in FIG. One effective area 22 corresponds to one organic EL display device, and the deposition mask device 10 shown in FIG.

  As shown in FIG. 4, in the illustrated example, the plurality of through holes 25 formed in each effective region 22 are arranged at predetermined pitches along two directions orthogonal to each other in the effective region 22. Yes. An example of the through hole 25 formed in the metal plate 21 will be described in detail with reference mainly to FIGS. 4 and 5.

  FIG. 4 is a partial plan view showing the vapor deposition mask 20 from the first surface 20a side. FIG. 5 is a cross-sectional view taken along the line II of FIG. As shown in FIG. 4 and FIG. 5, the plurality of through-holes 25 are provided on the first surface 20 a on one side along the normal direction of the vapor deposition mask 20 and on the other side along the normal direction of the vapor deposition mask 20. The vapor deposition mask 20 is penetrated by extending between the second surface 20b as a side. In the illustrated example, as will be described in detail later, a first effective recess 30 is formed in the metal plate 21 by etching from the first surface 21a side of the metal plate 21 which is one side in the normal direction of the vapor deposition mask. The second effective recess 35 is formed in the metal plate 21 from the second surface 21b side which is the other side in the normal direction of the metal plate 21. The first effective recess 30 and the second effective recess 35 form a through hole. 25 is formed.

  As shown in FIG. 5, vapor deposition is performed from one side to the other side in the normal direction of the vapor deposition mask 20, that is, from the first surface 20a side to the second surface 20b side of the vapor deposition mask 20. The cross-sectional area of each first effective recess 30 in the cross section along the plate surface of the vapor deposition mask 20 at each position along the normal direction of the mask 20 gradually decreases. In other words, in the cross section along the normal direction of the vapor deposition mask 20, the width of each first effective recess 30 along the plate surface of the vapor deposition mask 20 at each position along the normal direction of the vapor deposition mask 20 is the vapor deposition mask. 20 gradually decreases from the first surface 20a side to the second surface 20b side. In particular, in the illustrated example, the cross-sectional area of each first effective recess 30 continues to change so as to decrease from the first surface 20a side of the vapor deposition mask 20 toward the second surface 20b side. As shown in FIG. 5, the wall surface 31 of the first effective recess 30 extends in a direction intersecting the normal direction of the vapor deposition mask 20 in the entire region, and one side along the normal direction of the vapor deposition mask 20. It is exposed towards the side.

  Similarly, the cross-sectional area of each second effective recess 35 in the cross section along the plate surface of the vapor deposition mask 20 at each position along the normal direction of the vapor deposition mask 20 is the other side in the normal direction of the vapor deposition mask 20. Gradually toward the one side, that is, from the second surface 20b side of the vapor deposition mask 20 toward the first surface 20a side. In other words, in the cross section along the normal direction of the vapor deposition mask 20, the width of each second effective recess 35 along the plate surface of the vapor deposition mask 20 at each position along the normal direction of the vapor deposition mask 20 is as follows. 20 gradually decreases from the second surface 20b side toward the first surface 20a side. In particular, in the illustrated example, the cross-sectional area of each second effective recess 35 continues to change so as to decrease from the second surface 20b side of the vapor deposition mask 20 toward the first surface 20a side. The wall surface 36 of the second effective recess 35 extends in a direction intersecting the normal direction of the vapor deposition mask 20 in the entire region, and is exposed toward the other side along the normal direction of the vapor deposition mask 20. ing.

  As shown in FIG. 5, the through-hole 25 is tapered from the first effective recess 30 that is tapered from the first surface 20 a side of the vapor deposition mask 20 and the second surface 20 b of the vapor deposition mask 20. The second effective recess 35 is defined by the connection. As shown in FIG. 5, in the illustrated example, one first effective recess 30 and one second effective recess 35 are formed for each through hole 25. Accordingly, each through hole 25 is formed by connecting one first effective recess 30 and a second effective recess 35 provided corresponding to the first effective recess 30.

  As shown in FIG. 5, the wall surface 31 of the first effective recess 30 and the wall surface 36 of the second effective recess 35 are connected via a circumferential connecting portion 41. The connecting portion 41 is an overhang where the wall surface 31 of the first effective recess 30 inclined with respect to the normal direction of the vapor deposition mask and the wall surface 36 of the second effective recess 35 inclined with respect to the normal direction of the vapor deposition mask merge. It is defined by the ridgeline of the part. And the connection part 41 defines the penetration part 42 in which the area of the through-hole 25 becomes the smallest in the planar view of the vapor deposition mask 20.

  As shown in FIG. 5, on the other side of the vapor deposition mask in the normal direction, that is, on the second surface 20 b of the vapor deposition mask 20, two adjacent through holes 25 are formed on the plate surface of the vapor deposition mask. Are spaced apart from each other. That is, like the manufacturing method described later, the metal plate 21 is etched from the second surface 21b side of the metal plate 21 that corresponds to the second surface 20b of the vapor deposition mask 20 to produce the second effective recess 35. In this case, the second surface 21b of the metal plate 21 remains between two adjacent second effective recesses 35.

  On the other hand, as shown in FIG. 5, two adjacent first effective recesses 30 are connected on the other side along the normal direction of the vapor deposition mask, that is, on the first surface 20 a side of the vapor deposition mask 20. . That is, like the manufacturing method described later, the first effective recess 30 is formed by etching the metal plate 21 from the first surface 21a side of the metal plate 21 corresponding to the first surface 20a of the vapor deposition mask 20. In this case, the first surface 21 a of the metal plate 21 does not remain between two adjacent first effective recesses 30. According to the first surface 20a of the deposition mask 20 formed by the first effective recess 30 as described above, the deposition surface 20a faces the deposition material 98 as shown in FIG. When the mask 20 is used, the utilization efficiency of the vapor deposition material 98 can be improved effectively.

  When the vapor deposition mask device 10 is accommodated in the vapor deposition device 90 as shown in FIG. 2, the first surface 20a of the vapor deposition mask 20 holds the vapor deposition material 98 as shown by a two-dot chain line in FIG. The second surface 20 b of the vapor deposition mask 20 faces the glass substrate 92. Therefore, the vapor deposition material 98 adheres to the glass substrate 92 through the first effective recess 30 whose cross-sectional area is gradually reduced. As shown in FIG. 2, the vapor deposition material 98 not only moves along the normal direction of the glass substrate 92 from the crucible 94 toward the glass substrate 92, but is also greatly inclined with respect to the normal direction of the glass substrate 92. It may move in the direction. At this time, if the cross-sectional shape of the first effective recess 30 has an outline indicated by a dotted line in FIG. 5, the vapor deposition material 98 moving obliquely does not adhere to the vapor deposition mask 20 and reach the glass substrate 92. Moreover, in the area | region which faces the through-hole 25 on the glass substrate 92, the area | region where the vapor deposition material 98 reaches | attains easily and the part which cannot reach easily will arise.

In other words, in order to increase the utilization efficiency (deposition efficiency: rate of adhesion to the glass substrate 92) of the vapor deposition material to save expensive vapor deposition material, the film deposition using the expensive vapor deposition material is stabilized in a desired region. Therefore, in the cross section of FIG. 5 orthogonal to the sheet surface of the vapor deposition mask 20, the connection portion 41 that is a portion having the minimum cross-sectional area of the through-hole 25 and the wall surface 31 of the first effective recess 30 are provided. It is advantageous that the minimum angle θ ₁ (see FIG. 5) formed by the straight line L1 passing through the arbitrary position of the deposition mask 20 with respect to the normal line direction is sufficiently large. Then, according to the illustrated example, the wall surfaces 31 of the two adjacent first effective recesses 30 are merged to compare with a recess having a wall surface (contour) indicated by a dotted line that does not merge with other recesses. and are able to greatly reduce the angle theta _1.

The first effective recess 30 is formed by etching the first surface 21a of the metal plate 21, as will be described in detail later. The wall surface of the recess formed by etching is generally a curved surface that is convex toward the erosion direction. Therefore, the wall surface 31 of the recess formed by the etching is cut off in the region which is the etching start side, and in the region opposite to the etching start side, that is, in the deepest side of the recess, the method of the metal plate 21 is performed. The inclination is relatively large with respect to the line direction. In the illustrated vapor deposition mask 20, the wall surfaces 31 of the two adjacent first effective recesses 30 merge on the etching start side, so that the first effective recesses 30 constituting most of the through holes 25 are formed. The wall surface 31 can be effectively inclined with respect to the normal direction of the vapor deposition mask. In addition, even when compared with a recess formed by etching a metal plate whose thickness is reduced from the beginning, the wall surface 31 of the illustrated first effective recess 30 has a sharp portion that becomes the etching start side. Therefore, the inclination angle θ ₁ of the wall surface 31 can be made sufficiently large. Thereby, when the vapor deposition mask 20 demonstrated here is used, vapor deposition with a desired pattern can be stably implemented with high precision, improving the utilization efficiency of the vapor deposition material 98 effectively.

  Further, in the illustrated example, the tip edges (upper edges, edges located on one side along the normal direction of the vapor deposition mask) 32 of the wall surfaces 31 of all the first effective recesses 30 in the effective region 22 are: The leading edge 32 of the wall surface 31 of the other first effective recess 30 adjacent to the first effective recess 30 merges.

  In the example shown in FIG. 5, the first effective concave portion in which the first surface 20 a of the vapor deposition mask 20 is directed to one side in the normal direction of the vapor deposition mask in the entire area within the effective region 22 of the vapor deposition mask 20. 30 wall surfaces 31 are formed. As a result, the first surface 20 a of the vapor deposition mask 20 forms an uneven surface in the entire region within the effective region 22 of the vapor deposition mask 20.

According to such a vapor deposition mask 20, the inclination angle θ ₁ formed by the wall surface 31 of the first effective recess 30 with respect to the normal direction of the vapor deposition mask can be effectively increased in the entire effective region 22. Thereby, vapor deposition with a desired pattern can be stably performed with high accuracy while effectively improving the utilization efficiency of the vapor deposition material 98.

  Further, when the metal plate 21 is etched from the first surface 21a side of the metal plate 21 corresponding to the first surface 20a of the vapor deposition mask 20 as in the manufacturing method described later, the first effective recess 30 is produced. The first surface 21 a of the metal plate 21 is eroded by etching in the entire region of the metal plate 21 that forms the effective region 22 of the vapor deposition mask 20. That is, the maximum thickness Ta in the effective region 22 along the normal direction of the vapor deposition mask is less than 100% of the maximum thickness Tb in the surrounding region 23 (high rigidity region 55) along the normal direction of the vapor deposition mask. . Thus, it is preferable from the viewpoint of improving the utilization efficiency of the vapor deposition material that the thickness in the effective region 22 is generally reduced. On the other hand, from the viewpoint of the strength of the vapor deposition mask, the maximum thickness Ta in the effective region 22 along the normal direction of the vapor deposition mask is 50 of the maximum thickness Tb in the surrounding region 23 along the normal direction of the vapor deposition mask. % Or more is preferable. When the maximum thickness Ta in the effective area 22 is 50% or more of the maximum thickness Tb in the surrounding area 23, the effective area 22 of the evaporation mask 20 when the evaporation mask 20 is stretched on the frame 15 is used. Therefore, it is possible to effectively suppress vapor deposition in a desired pattern. Further, in this case, it is possible to effectively prevent the deformation of the effective region 22 in which a large number of through holes 25 are formed during processing such as conveyance and cutting of the metal plate 64, removal of the resin 69, and attachment to the frame 15. it can.

Further, in the illustrated example, due to a manufacturing method described later, in the cross section along the normal line direction of the vapor deposition mask, the portion 43 where the tip edges 32 of the wall surfaces 31 of the two first effective recesses 30 merge. The outer contour has a chamfered shape. As described above, generally, the wall surface of the recess formed by etching has a curved surface that is convex toward the main traveling direction by etching. Therefore, when the two first effective recesses 30 formed by etching are simply partially overlapped, as shown by the dotted line in FIG. 5, the merged portion 43 is in the normal direction of the vapor deposition mask serving as the etching start side. It becomes a pointed shape toward one side along. On the other hand, in the illustrated vapor deposition mask 20, the sharp portion in the merge portion 43 is chamfered. As understood from FIG. 5, the chamfering can effectively increase the above-described angle θ ₁ formed by the wall surface 31 with respect to the normal line direction of the vapor deposition mask 20. Thereby, the utilization efficiency of the vapor deposition material 98 can be improved more effectively, and vapor deposition with a desired pattern can be carried out with high accuracy and stability.

  As a result, in the cross section along the normal direction of the vapor deposition mask, the outer contour of the portion 43 where the tip edges 32 of the wall surfaces 31 of the two first effective recesses 30 merge is one side along the normal direction of the vapor deposition mask. It becomes a curvilinear shape that bulges toward the side.

  As described above, in the present embodiment, the through holes 25 are arranged in a predetermined pattern in each effective region 22. As an example, when the vapor deposition mask 20 (vapor deposition mask device 10) is used to produce a display (about 2 to 5 inches) such as a mobile phone or a digital camera, the arrangement pitch P of the through holes 25 is 58 μm (440 ppi). The thickness can be about 254 μm (100 ppi) or less. When color display is to be performed, the vapor deposition mask 20 (vapor deposition mask device 10) and the glass substrate 92 are moved relative to each other along the arrangement direction of the through holes 25 (one direction described above), and the red color is displayed. An organic light emitting material, a green organic light emitting material, and a blue organic light emitting material may be deposited in this order. Further, when the vapor deposition mask 20 (vapor deposition mask device 10) is used to manufacture a display for a mobile phone, the width (slit width) W along the arrangement direction (one direction described above) of each through-hole 25 is 28 μm. The thickness may be about 84 μm or less.

  As shown in FIGS. 4 and 5, the stress relaxation region 50 has (preferably a plurality of) first stress relaxation recesses 51 provided on the first surface 20 a of the vapor deposition mask 20. Thereby, the cross-sectional area along the normal direction and the width direction of the vapor deposition mask 20 around the first stress relaxation recess 51 can be reduced. Further, by providing a plurality of first stress relaxation recesses 51, it is possible to increase the region where the cross-sectional area along the normal direction and the width direction of the vapor deposition mask 20 is small, and reduce the rigidity of the stress relaxation region 50. Can be made.

  The stress relaxation region 50 further includes (preferably a plurality of) second stress relaxation recesses 52 provided on the second surface 20 b of the vapor deposition mask 20. Thereby, the cross-sectional area along the normal direction and the width direction of the vapor deposition mask 20 around the second stress relaxation recess 52 can be reduced. In addition, by providing a plurality of second stress relaxation recesses 52, it is possible to increase a region where the cross-sectional area along the normal direction and the width direction of the vapor deposition mask 20 is small, and to further increase the rigidity of the stress relaxation region 50. It can be further reduced.

  The 1st stress relaxation recessed part 51 is formed in the metal plate 21 by the etching from the 1st surface 21a side of the metal plate 21 used as the one side in the normal line direction of a vapor deposition mask. Similarly, the second stress relaxation recess 52 is formed in the metal plate 21 from the second surface 21b side which is the other side in the normal direction of the metal plate 21. The first stress relaxation recess 51 and the second stress relaxation recess 52 are preferably formed by partially etching the metal plate 21, that is, by etching so as not to penetrate the metal plate 21 (for example, half etching). It is. Moreover, in the form shown in FIG. 5, the cross section of the 1st stress relaxation recessed part 51 and the 2nd stress relaxation recessed part 52 is formed in semicircle shape. The cross-sectional shapes of the first stress relaxation recess 51 and the second stress relaxation recess 52 are caused by the direction in which the etchant advances, but are not limited to a semicircular shape. When the cross sections of the first stress relaxation recess 51 and the second stress relaxation recess 52 are formed in a semicircular shape, the first stress relaxation recess 51 and the first stress relaxation recess 51 and the second stress relaxation recess 52 are caused by the tension applied in the longitudinal direction of the vapor deposition mask 20. 2 It is possible to prevent a crack or the like from being generated due to stress concentration around the stress relaxation recess 52.

  Each of the first stress relaxation recess 51 and the second stress relaxation recess 52 extends in the width direction of the vapor deposition mask 20. That is, in the present embodiment, the first stress relaxation recess 51 and the second stress relaxation recess 52 extend linearly in the stress relaxation region 50 in the width direction of the vapor deposition mask 20. In this way, the cross-sectional area in the normal direction and the width direction of the vapor deposition mask 20 around the first stress relaxation recess 51 and the second stress relaxation recess 52 is reduced.

  It is preferable that the 1st stress relaxation recessed part 51 and the 2nd stress relaxation recessed part 52 are alternately arrange | positioned in the longitudinal direction of the vapor deposition mask 20 in planar view. That is, the first stress relaxation recess 51 and the second stress relaxation recess 52 are arranged so as not to overlap in a plan view. Thereby, the cross-sectional shape along the normal direction and the longitudinal direction of the vapor deposition mask 20 in the stress relaxation region 50 can be formed in a roughly bellows shape, and the rigidity of the stress relaxation region 50 is effectively reduced. Can do.

  As described above, the effective region 22 and the stress relaxation region 50 are surrounded by the high rigidity region 55, and the high rigidity region 55 is interposed between the effective region 22 and the stress relaxation region 50. That is, a high-rigidity region is formed between the through hole 25 located on the outermost side of the effective region and the first stress relaxation recess 51 (or the second stress relaxation recess 52) located on the outermost side of the stress relaxation region 50. 55 is formed. As described above, the high rigidity region 55 is a region where the material of the metal plate 21 is not removed by etching or the like on the first surface 21a and the second surface 21b of the metal plate 21. Thereby, it can be said that the high-rigidity area | region 55 is an area | region which has the largest thickness (namely, largest thickness Tb in the surrounding area | region 23) among the vapor deposition masks 20. FIG. Such a highly rigid region 55 surrounds the effective region, thereby effectively suppressing deformation of the effective region.

  The vapor deposition mask 20 as described above is arranged in parallel on the opening 15 a of the frame 15 of the vapor deposition mask apparatus 10 and attached to the frame 15. The frame 15 holds the deposition mask in a stretched state so that the deposition mask 20 is not bent. The vapor deposition mask 20 and the frame 15 are fixed to each other, for example, by spot welding.

  The vapor deposition mask device 10 is held inside a vapor deposition device 90 that is in a high temperature atmosphere. Therefore, the vapor deposition mask 20 and the frame 15 are preferably made of the same material having a low coefficient of thermal expansion in order to prevent the vapor deposition frame from being bent or generating thermal stress. As such a material, for example, a 36% Ni invar material can be used.

  According to the vapor deposition mask 20 as described above, the stress relaxation region 50 for relaxing the stress in the longitudinal direction of the vapor deposition mask 20 is interposed between the effective regions 22 adjacent to each other. Thereby, when a tension is applied in the longitudinal direction of the vapor deposition mask 20, the stress applied to the stress relaxation region 50 by this tension can be relaxed. For this reason, deformation in the effective region 22 can be effectively suppressed, and vapor deposition with a desired pattern can be effectively performed. In particular, in an organic EL display device, it is desired to pattern an expensive vapor deposition material 98 on the substrate 42 with a high-definition pattern. For this reason, the vapor deposition mask 20 of this Embodiment is especially suitable for the vapor deposition mask used in order to manufacture an organic EL display apparatus.

  Further, according to the vapor deposition mask 20 as described above, the leading edge 32 of the wall surface 31 of the first effective recess 30 merges with the wall surface 31 of another first effective recess 30 adjacent to the first effective recess 30. Yes. For this reason, it is possible to accurately perform the vapor deposition with a high-definition pattern with a desired thickness while effectively improving the utilization efficiency of the vapor deposition material 98. Also by this, the vapor deposition mask 20 of this Embodiment is especially suitable for the vapor deposition mask used in order to manufacture an organic EL display apparatus.

  Next, the manufacturing method of such a vapor deposition mask 20 is demonstrated mainly using FIGS. In the manufacturing method of the vapor deposition mask 20 described below, as shown in FIG. 6, a long metal plate 64 extending in a strip shape is prepared (supplied), and a through hole 25 is formed in the long metal plate 64. By cutting the long metal plate 64, the vapor deposition mask 20 made of the sheet metal plate 21 is obtained.

  More specifically, the manufacturing method of the vapor deposition mask 20, the step of supplying a long metal plate 64 extending in a strip shape, and etching using a photolithography technique are performed on the long metal plate 64, and the long metal plate The first effective recess 30 is formed on the long metal plate 64 from the side of the first surface 64a and the long metal plate 64 is etched using the photolithographic technique. Forming a second effective recess 35. And the 1st effective recessed part 30 and the 2nd effective recessed part 35 which were formed in the elongate metal plate 64 mutually communicate, and the through-hole 25 is produced in the elongate metal plate 64. FIG. In the example shown in FIG. 6, the process of forming the second effective recess 35 is performed before the process of forming the first effective recess 30, and the process of forming the second effective recess 35 and the first effective recess 30 are performed. Between the formation process, the process of sealing the produced 2nd effective recessed part 35 is further provided. Details of each step will be described below.

  FIG. 6 shows a manufacturing apparatus 60 for manufacturing the vapor deposition mask 20. As shown in FIG. 6, first, a wound body 62 in which a long metal plate 64 is wound around a supply core 61 is prepared. Then, when the supply core 61 rotates and the wound body 62 is rewound, a long metal plate 64 extending in a strip shape is supplied as shown in FIG. The long metal plate 64 is formed with the through-hole 25 to form the sheet metal plate 21 and the vapor deposition mask 20. Therefore, as described above, the long metal plate 64 is made of, for example, 36% Ni invar material. However, the sheet is not limited to this, and a sheet made of stainless steel, copper, iron, or aluminum can be used as the long metal plate 64.

  The supplied long metal plate 64 is transported to an etching apparatus (etching means) 70 by a transport roller 72. Each process shown in FIGS. 7 to 11 is performed by the etching means 70. First, as shown in FIG. 7, a resist pattern (also simply referred to as a resist) 65 a is formed on the first surface 64 a of the long metal plate 64, and the resist is formed on the second surface 64 b of the long metal plate 64. A pattern (simply referred to as a resist) 65b is formed. Specifically, the following is performed. First, a photosensitive resist material is applied on the first surface 64a of the long metal plate 64 (on the lower surface in the paper surface of FIG. 7) and the second surface 64b, and a resist film is formed on the long metal plate 64. Form. Next, a glass dry plate is prepared in which light is not transmitted to a region to be removed of the resist film, and the glass dry plate is disposed on the resist film. Thereafter, the resist film is exposed through a glass dry plate, and the resist film is further developed. As described above, a resist pattern (simply referred to as resist) 65a is formed on the first surface 64a of the long metal plate 64, and a resist pattern (simply simply resist is formed on the second surface 64b of the long metal plate 64). 65b) can also be formed.

  Next, as shown in FIG. 8, using the resist pattern 65b formed on the long metal plate 64 as a mask, the second surface of the long metal plate 64 using an etching solution (for example, ferric chloride solution). Etching is performed from the 64b side. For example, the etching solution is sprayed toward the second surface 64b of the long metal plate 64 from the nozzle disposed on the side facing the second surface 64b of the long metal plate 64 to be conveyed through the resist pattern 65b. The As a result, as shown in FIG. 8, erosion by the etching solution proceeds in a region of the long metal plate 64 that is not covered with the resist pattern 65b, that is, a region of the hole 66b of the resist pattern 65b. As described above, a number of second effective recesses 35 are formed in the long metal plate 64 from the second surface 64b side.

  When etching is performed to form the second effective recess 35, erosion by the etching solution proceeds in the region of the hole 66c of the resist pattern 65b, and the second stress relaxation recess 52 is formed on the second surface 64b of the long metal plate 64. Is formed. It should be noted that by adjusting the size of the hole 66c (for example, by increasing it), the etching rate for forming the second stress relaxation recess 52 can be adjusted. Accordingly, when the second stress relaxation recess 52 having a desired shape, for example, the second stress relaxation recess 52 having an etching depth deeper than that of the second effective recess 35 is etched to form the second effective recess 35. Can be formed.

  Thereafter, as shown in FIG. 9, the formed second effective recess 35 is covered with a resin 69 having resistance to the etching solution. That is, the second effective recess 35 and the second stress relaxation recess 52 are sealed by the resin 69 having resistance to the etching solution. In the example shown in FIG. 9, a film of resin 69 is formed so as to cover not only the formed second effective recess 35 and the second stress relaxation recess 52 but also the second surface 64b (resist pattern 65b).

  Next, as shown in FIG. 10, the second etching is performed on the long metal plate 64. In the second etching, the long metal plate 64 is etched only from the first surface 64a side, and the formation of the first effective recess 30 proceeds from the first surface 64a side. This is because the resin 69 having resistance to the etching solution is coated on the second surface 64b side of the long metal plate 64. Therefore, the shape of the second effective recess 35 formed in a desired shape is not impaired by the first etching. In this case, since the resin 69 is also coated on the second stress relaxation recess 52, the shape of the second stress relaxation recess 52 is not impaired.

  Etching by etching is performed in the portion of the long metal plate 64 that is in contact with the etching solution, that is, in the region of the hole 66a of the resist pattern 65a. Therefore, erosion does not proceed only in the normal direction (thickness direction) of the long metal plate 64 but also proceeds in the direction along the plate surface of the long metal plate 64. As a result, etching proceeds in the normal direction of the long metal plate 64 so that the first effective recess 30 is not only connected to the second effective recess 35, but also at a position facing two adjacent holes 66a of the resist pattern 65a. The two first effective recesses 30 formed respectively merge on the back side of the bridge portion 67a located between the two holes 66a.

  As the etching further progresses, the joining portion 43 formed by joining the two adjacent first effective recesses 30 is separated from the resist pattern 65a, and the etching erosion occurs in the joining portion 43 below the resist pattern 65a. The process proceeds in the 64 normal direction (thickness direction). Thereby, the merging portion 43 sharpened toward one side along the normal direction of the vapor deposition mask is etched and chamfered from one side along the normal direction of the vapor deposition mask.

  As described above, the etching from the first surface 64a side of the long metal plate 64 proceeds by a preset amount, and the second etching for the long metal plate 64 is completed. At this time, the 1st effective recessed part 30 is extended to the position which reaches the 2nd effective recessed part 35 along the thickness direction of the elongate metal plate 64, and, thereby, the 1st effective recessed part 30 and the 1st which are mutually connected. 2 Through holes 25 are formed in the long metal plate 64 by the effective recesses 35.

  During the second etching, erosion by the etching solution proceeds in the region of the hole 66d of the resist pattern 65a, and the first stress relaxation recess 51 is formed on the first surface 64a of the long metal plate 64. Note that the etching rate for forming the first stress relaxation recess 51 can be adjusted by adjusting the size of the hole 66d (for example, by reducing the size). Accordingly, the first stress relaxation recess 51 having a desired shape, for example, the first stress relaxation recess 51 having an etching depth shallower than that of the first effective recess 30 is etched to form the first effective recess 30 (first It can be formed when performing the second etching).

  Thus, by performing etching twice, the first stress relaxation recess 51 and the second stress relaxation recess 52 are formed, and the stress relaxation region 50 is defined. Along with this, a high rigidity region 55 is defined as a region where the material of the metal plate 64 is not removed by etching.

  Thereafter, as shown in FIG. 11, the resin 69 is removed from the long metal plate 64. The resin film 69 can be removed with, for example, an alkaline release agent.

  Next, the resist patterns 65 a and 65 b are removed from the long metal plate 64. In the step of forming the first effective recess 30, the erosion of the first surface 64 a by etching proceeds in many regions of the metal plate 64 that form the effective region 22. Therefore, the resist pattern 65 a provided on the first surface 64 a is already separated from the metal plate 64 in many regions of the metal plate 64 that form the effective region 22. For this reason, when the resist pattern 65a is removed, damage such as deformation of the effective region 22 of the vapor deposition mask 20 can be effectively avoided, and the yield of the vapor deposition mask 20 can be effectively improved.

  The long metal plate 64 in which a large number of through holes 25 are formed in this way is conveyed to a cutting device (cutting means) 73 by conveyance rollers 72 and 72 that rotate while the long metal plate 64 is sandwiched. Is done. The supply core 61 described above is rotated via the tension acting on the long metal plate 64 by the rotation of the transport rollers 72 and 72 so that the long metal plate 64 is supplied from the wound body 62. It has become.

  While the long metal plate 64 in which the through hole 25 is formed is conveyed, as described above, tension is applied to the long metal plate 64. In this case, stress due to tension is applied to the stress relaxation region 50, and the peripheral portions of the first stress relaxation recess 51 and the second stress relaxation recess 52 are elastically deformed. Thereby, the said stress is relieved and the elongate metal plate 64 can be conveyed, suppressing the deformation | transformation in the effective area | region 22 effectively.

  Thereafter, the long metal plate 64 in which a large number of recesses 61 are formed is cut into a predetermined length by a cutting device (cutting means) 73, whereby the sheet-like metal plate 21 in which a large number of through holes 25 are formed is obtained. can get.

  The through hole 25 can also be formed by etching the long metal plate 64 from only one surface. However, when the long metal plate 64 is etched only from the upper surface, an etchant that has already been used for erosion and has a low erosion ability remains in the tapered hole formed by erosion. After that, when the hole of the metal plate reaches the lower surface, the etching solution remaining in the hole until then flows out from the lower surface, and into the hole in which a fresh etching solution having a high erosion ability is formed. Flows in. At this time, the liquid pressure increases in the lower region in the hole where the cross-sectional area (opening area) is small, and the lower region in the hole is eroded violently by the fresh etching solution. That is, the hole shape cannot be sufficiently controlled. On the other hand, when the metal plate is etched only from the lower surface through the resist pattern, if the tapered hole formed by erosion penetrates the metal plate, the etching solution may remain around the hole on the upper surface. As a result, erosion also proceeds from the upper surface of the metal plate by the remaining etching solution, and the shape of the hole cannot be sufficiently controlled. On the other hand, according to the etching method described above, the shape of the through hole 25 can be stabilized.

  As described above, the vapor deposition mask 20 made of the metal plate 21 having a large number of through holes 25 is obtained. And the vapor deposition mask apparatus 10 is obtained by attaching the obtained vapor deposition mask 20 to the flame | frame 15. As shown in FIG. The frame 15 may be attached to one surface 20a of the vapor deposition mask 20 or may be attached to the other surface 20b of the vapor deposition mask 20.

  When attaching the vapor deposition mask 20 to the frame 15, the tension is applied to the vapor deposition mask 20 so that the vapor deposition mask does not bend, and the vapor deposition mask 20 is held in a stretched state, for example, by spot welding. It is fixed against. At this time, tension is applied to the vapor deposition mask 20. In this case, stress due to tension is applied to the stress relaxation region 50, and the peripheral portions of the first stress relaxation recess 51 and the second stress relaxation recess 52 are elastically deformed. Thereby, the said stress is relieve | moderated, deformation | transformation of wrinkles etc. can be suppressed effectively in the effective area | region 22, and vapor deposition with a desired pattern can be implemented effectively.

  According to the vapor deposition mask manufacturing method according to the present embodiment as described above, the stress relaxation region 50 that relaxes the stress in the longitudinal direction of the vapor deposition mask 20 is interposed between the adjacent effective regions 22. . When tension is applied to the vapor deposition mask 20 manufactured in this way, the stress relaxation region 50 can relax stress due to tension. For this reason, the deformation | transformation in the effective area | region 22 can be suppressed effectively, and it becomes possible by using the manufactured vapor deposition mask 20 to implement vapor deposition by a desired pattern effectively.

  Moreover, according to the manufacturing method of the vapor deposition mask apparatus by this Embodiment, in the process of forming the 1st effective recessed part 30 in the metal plates 21 and 64, the erosion by etching advances also in the direction along the plate surface of the metal plate. The two first effective recesses 30 adjacent under the resist pattern 65a merge, and the tip edge 32 of the wall surface 31 of the at least one first effective recess 30 extends over the entire circumference. It merges with the wall surface 31 of any other first effective recess 30 positioned around the 1 effective recess 30. The wall surface 31 of the first effective recess 30 formed as described above and forming the through hole 25 is greatly inclined with respect to the normal direction of the vapor deposition mask 20. Thereby, by using the manufactured vapor deposition mask 20, vapor deposition with a high-definition pattern can be stably performed while using the vapor deposition material 98 with high utilization efficiency.

  Note that various modifications can be made to the above-described embodiment. Hereinafter, an example of modification will be described with reference to the drawings. In the drawings used in the following description, the same reference numerals as those used for the corresponding parts in the above-described embodiment are used, and redundant descriptions are omitted.

  First, a first modification will be described. In the embodiment described above, the stress relaxation region 50 includes the first stress relaxation recess 51 provided in the first surface 20a of the vapor deposition mask 20 and the second stress relaxation recess provided in the second surface 20b of the vapor deposition mask 20. However, the present invention is not limited to this. For example, as shown in FIGS. 12 and 13, the stress relaxation region 50 has only a single first stress relaxation recess 51, and the second stress relaxation recess 52 is provided on the second surface 20 b of the vapor deposition mask 20. It does not have to be. In this case, as shown in FIG. 13, the first stress relaxation recess 51 extends linearly in the width direction of the vapor deposition mask 20 and is formed long in the longitudinal direction of the vapor deposition mask 20, that is, rectangular in plan view. It is preferably formed in a shape. Thereby, the area | region where the cross-sectional area of the width direction of the vapor deposition mask 20 in the stress relaxation area | region 50 can be enlarged, and the rigidity of the stress relaxation area | region 50 can be made low. In addition, the stress relaxation area | region 50 has only the single 2nd stress relaxation recessed part 52, and the 1st stress relaxation recessed part 51 does not need to be provided in the 1st surface 20a of the vapor deposition mask 20. FIG.

  In addition, as shown in FIG. 13, you may make it the 1st stress relaxation recessed part 51 incline the part of the one side (left side in FIG. 13) in the longitudinal direction of the vapor deposition mask 20. As shown in FIG. In this case, by performing so-called halftone dot correction, the one side portion of the first stress relaxation recess 51 can be inclined. For example, as shown in FIG. 14, a resist pattern 65a formed on the first surface 64a of the long metal plate 64 is formed in a net shape (see the net-like formation portion 66e). Thereby, when etching is performed from the first surface 64 a side of the long metal plate 64, erosion due to etching is not only in the normal direction of the long metal plate 64 but also along the plate surface of the long metal plate 64. The direction also advances to the back side of the resist pattern 65a. Thereby, also in the part of the back side of the resist pattern 65a, the erosion of the long metal plate 64 proceeds, and a part of the first stress relaxation recess 51 can be inclined as shown in FIG. In this case, it is preferable to gradually change the material ratio of the resist pattern 65a in the net-like portion of the resist pattern 65a.

  Moreover, although the 1st stress relaxation recessed part 51 and the 2nd stress relaxation recessed part 52 showed the example extended linearly in the width direction of the vapor deposition mask 20 as embodiment mentioned above, it is not restricted to this. If the stress relaxation region 50 can relieve stress in the longitudinal direction of the vapor deposition mask 20, the shapes of the first stress relaxation recess 51 and the second stress relaxation recess 52 are arbitrary.

  In the above-described embodiment, an example in which the high rigidity region 55 having higher rigidity than the effective region 22 and the stress relaxation region 50 is interposed between the effective region 22 and the stress relaxation region 50 has been described. Not limited to. If the deformation of the effective region 22 can be suppressed, the high-rigidity region 55 may not be interposed between the effective region 22 and the stress relaxation region 50.

  In the above-described embodiment, the method of forming the through hole 25 and the stress relaxation recesses 51 and 52 in the long metal plate 64 can be changed. That is, in the above-described embodiment, the step of forming the second effective recess 35 and the second stress relaxation recess 52 is performed before the step of forming the first effective recess 30 and the first stress relaxation recess 51. However, the present invention is not limited to this, and the step of forming the first effective recess 30 and the first stress relaxation recess 51 is performed before the step of forming the second effective recess 35 and the second stress relaxation recess 52. In addition, the metal plates 21 and 64 are simultaneously etched from the first surfaces 21a and 64a and the second surfaces 21b and 64b to form the first effective recess 30 and the first stress relaxation recess 51. You may make it perform a process and the process of forming the 2nd effective recessed part 35 and the 2nd stress relaxation recessed part 52 in parallel. In addition, since the erosion amount of the long metal plate 64 by etching when forming the first effective recess 30 is larger than the erosion amount of the long metal plate 64 by etching when forming the second effective recess 35, The metal plates 21 and 64 are simultaneously etched from both sides of the first surfaces 21a and 64a and the second surfaces 21b and 64b to form the first effective recess 30 and the first stress relaxation recess 51, as well as the second effective recess 35 and the second The process of forming the 2 stress relaxation recessed part 52 may be performed in parallel, and only the process of forming the 1st effective recessed part 30 may be continued after that.

  In the above-described embodiment, both the production of the resist pattern 65a on the first surface 64a of the long metal plate 64 and the production of the resist pattern 65b on the second surface 64b of the long metal plate 64 are performed. The first effective recess 30 and the first stress relaxation recess 51, and the second effective recess 35 and the second stress relaxation recess 52 are formed before the formation, but are not limited thereto. For example, one hole is formed using a resist pattern produced by producing one of the resist patterns 65a and 65b, and the other resist pattern produced by producing the other resist pattern is then used. You may make it form the hole of.

  As yet another modification, the pattern of the through holes 25 formed in the vapor deposition mask 20 may be changed. The arrangement pattern of the through holes 25 described in the above embodiment is merely an example, and the vapor deposition mask 20 in which the through holes 25 are arranged in various patterns may be manufactured.

  In addition, although the some modification with respect to embodiment mentioned above was demonstrated above, naturally, it is also possible to apply combining several modifications suitably.

20 Deposition mask 20a First surface 20b Second surface 21 Metal plate 21a First surface 21b Second surface 22 Effective region 23 Surrounding region 25 Through hole 30 First effective recess 35 Second effective recess 50 Stress relaxation region 51 First stress relaxation Concave portion 52 Second stress relaxation concave portion 55 High rigidity region 64 Long metal plate 64a First surface 64b Second surface

Claims (10)

A strip-shaped deposition mask, which is a method of manufacturing a deposition mask having a plurality of effective regions arranged in the longitudinal direction of the deposition mask and each having a plurality of through holes formed therein.
Preparing a metal plate having a first surface and a second surface facing each other;
Forming, in the region of the metal plate that forms the effective region, an effective recess that defines the through hole from the first surface side, and
In the step of forming the effective recess, stress relaxation is performed in the region of the metal plate that is interposed between the effective regions adjacent to each other and forms a stress relaxation region that relaxes the stress in the longitudinal direction of the vapor deposition mask. A method of manufacturing a vapor deposition mask, wherein the concave portion is formed from the first surface side.   The method of manufacturing a vapor deposition mask according to claim 1, wherein in the step of forming the effective concave portion, the stress relaxation concave portion is formed to extend in a width direction of the vapor deposition mask. Forming a second effective recess that is connected to the effective recess to form the through-hole from the second surface side;
In the step of forming the second effective recess, a second stress relaxation recess is formed from the side of the second surface in a region of the metal plate that forms the stress relaxation region. Item 3. A method for producing an evaporation mask according to Item 1 or 2.   In the step of forming the second effective recess, the second stress relaxation recess is formed so as to extend in a width direction of the deposition mask, and the stress relaxation recess and the second stress relaxation recess are in the plan view. The method for manufacturing a vapor deposition mask according to claim 3, wherein the vapor deposition mask is alternately arranged in a longitudinal direction of the vapor deposition mask.   The vapor deposition according to any one of claims 1 to 4, wherein a high-rigidity region having higher rigidity than the effective region and the stress relaxation region is formed between the effective region and the stress relaxation region. Mask manufacturing method. A strip-shaped deposition mask having a first surface and a second surface facing each other,
A plurality of effective areas arranged in the longitudinal direction of the vapor deposition mask, each having a plurality of through holes,
A stress relaxation region that is interposed between the effective regions adjacent to each other and relaxes the stress in the longitudinal direction of the vapor deposition mask,
The said stress relaxation area | region has a stress relaxation recessed part provided in the said 1st surface, The vapor deposition mask characterized by the above-mentioned.   The said stress relaxation recessed part is extended in the width direction of the said vapor deposition mask, The vapor deposition mask of Claim 6 characterized by the above-mentioned.   The vapor deposition mask according to claim 6, wherein a second stress relaxation recess is provided on the second surface of the vapor deposition mask. The second stress relaxation recess extends in a width direction of the vapor deposition mask,
The vapor deposition mask according to claim 8, wherein the stress relaxation portions and the second stress relaxation portions are alternately arranged in a longitudinal direction of the vapor deposition mask in a plan view.   The high-rigidity region interposed between the effective region and the stress relaxation region and having higher rigidity than the effective region and the stress relaxation region is further provided. Vapor deposition mask.

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